Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (171360) > Seite 1253 nach 2856

Wählen Sie Seite:   [  << Vorherige Seite ]  1 285 570 855 1140 1248 1249 1250 1251 1252 1253 1254 1255 1256 1257 1258 1425 1710 1995 2280 2565 2850 2856  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STW26N65DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B4FE16CDE0D2&compId=stw26n65dm2.pdf?ci_sign=9c157ec2ce301fe3b09b0e61fcccd4e67637dffc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW26NM50 STW26NM50 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796AB7458915E28&compId=STW26NM50-DTE.pdf?ci_sign=498e2078d94698a68e0e529722c9c5b2da34d361 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Case: TO247
Drain-source voltage: 500V
Drain current: 18.9A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.75 EUR
15+4.8 EUR
16+4.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW26NM60N STW26NM60N STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796ADD753C07E28&compId=STW26NM60N-DTE.pdf?ci_sign=ea054b2d8bb283dc31355dfcb068e6127043945a Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 115 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.48 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
STW27N60M2-EP STMicroelectronics en.DM00251846.pdf STW27N60M2-EP THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW28N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B50B365380D2&compId=stw28n60dm2.pdf?ci_sign=936148c3be1f1e238d31e1eece3b8c8f9761ea54 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ DM2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW28N60M2 STW28N60M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7975CB8F4DA9E28&compId=STx28N60M2-DTE.pdf?ci_sign=df0efbd07c4977842c9371e9e730180eb67694e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.75 EUR
19+3.76 EUR
60+2.86 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
STW28N65M2 STW28N65M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B50B3655C0D2&compId=stw28n65m2.pdf?ci_sign=2b51429875914375958913d5883b0a27b7f644a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+23.84 EUR
5+14.3 EUR
13+5.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STW28NM50N STMicroelectronics en.CD00271786.pdf STW28NM50N THT N channel transistors
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.12 EUR
27+2.73 EUR
28+2.57 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
STW30N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593A700D2&compId=stw30n65m5.pdf?ci_sign=09f93463e8e5ed69ea6068bf5d5c533194f0d75f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Gate charge: 64nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 88A
Mounting: THT
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.39 EUR
15+5 EUR
16+4.73 EUR
510+4.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW30N80K5 STW30N80K5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5997DA0C0D2&compId=stw30n80k5.pdf?ci_sign=9d6049b0ebae284e19df584c158f0ae5b9fefcdc Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.44 EUR
9+8.21 EUR
10+7.75 EUR
600+7.45 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STW31N65M5 STW31N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EC0607E61834745&compId=STW31N65M5.pdf?ci_sign=6e86743506f5fb85b665b2710470845c741c89ed Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW32NM50N STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5997DA200D2&compId=stw32nm50n.pdf?ci_sign=72569432bbf5fe7f71ee0b3e87cd0cb703bfc8d0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW33N60DM2 STW33N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593AC40D2&compId=stw33n60dm2.pdf?ci_sign=e586b9aaf8b023ed71d90191c2409c35ec09056c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.42 EUR
14+5.32 EUR
15+5.03 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW33N60M6 STW33N60M6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593AD80D2&compId=stw33n60m6.pdf?ci_sign=a434ccaab68579aa576acf32d05e9d69f163f57d Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW34N65M5 STW34N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B797698F371C1E28&compId=STx34N65M5-DTE.pdf?ci_sign=4da573b778378b60dbb6e68615eb48ebb234bae8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW34NM60N STW34NM60N STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796AF802AE71E28&compId=STW34NM60N-DTE.pdf?ci_sign=040baad4022de1b6f2dc25d386c2623852f2c429 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 326 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.37 EUR
16+4.58 EUR
17+4.33 EUR
990+4.19 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STW34NM60ND STW34NM60ND STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7976B36A2DB9E28&compId=STx34NM60ND-DTE.pdf?ci_sign=e289cc0d626f0f2806aaec98cb7ab1e097b96ee3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.36 EUR
15+4.8 EUR
16+4.55 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
STW35N60DM2 STW35N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796B26C767B9E28&compId=STW35N60DM2-DTE.pdf?ci_sign=26856859e0c552981a2b1b94929520fa2a3defbe Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW35N65DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593AEC0D2&compId=stw35n65dm2.pdf?ci_sign=c5f2bbab7ad81e88fb5aebdb3ade95dd140c4af3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 93mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW36N60M6 STW36N60M6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B000D2&compId=stw36n60m6.pdf?ci_sign=b06176704a89c4696a7c80679a6fa51127a81fe2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44.3nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW37N60DM2AG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B140D2&compId=stw37n60dm2ag.pdf?ci_sign=39ae9f9cacacd3e8c470585f341ff5b9c725ca9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW38N65M5 STW38N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B79770B36DD15E28&compId=STx38N65M5-DTE.pdf?ci_sign=7ccd622a07229b7c54bb6403fa974b71e4668507 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 19A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW38N65M5-4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B280D2&compId=stw38n65m5-4.pdf?ci_sign=836abd2fb157fc0ba64d64e3bd0bfa6e24b26e67 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW3N150 STW3N150 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AB0CEF9EB1F8745&compId=STP3N150.pdf?ci_sign=4b6e46b298994f0dccd5fe12e8993c8059a20d35 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.83 EUR
17+4.22 EUR
18+4.05 EUR
30+3.95 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
STW3N170 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B3C0D2&compId=stw3n170.pdf?ci_sign=cdfb834dd7c03e624436937e5e771575b71df3a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1.6A
Pulsed drain current: 10.4A
Power dissipation: 0.16W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N60M2-4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B500D2&compId=stw40n60m2-4.pdf?ci_sign=e2359af57e280011cb66e3204eb846b2159cb739 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N65M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B640D2&compId=stw40n65m2.pdf?ci_sign=8a74edb97f785fec556157f7a5aeafa26f773dab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Polarisation: unipolar
Drain current: 20A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Pulsed drain current: 128A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N90K5 STMicroelectronics en.DM00265509.pdf STW40N90K5 THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
3+26.88 EUR
5+16.57 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STW40N95DK5 STMicroelectronics en.DM00094303.pdf STW40N95DK5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N95K5 STMicroelectronics en.DM00119299.pdf STW40N95K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40NF20 STW40NF20 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B79772AF26FB1E28&compId=STx40NF20-DTE.pdf?ci_sign=cb38e43588a08d8c3a99878f3c254d9f3a6aa85f Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO247
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.65 EUR
18+3.98 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
STW42N60M2-EP STMicroelectronics STx42N60M2-EP.pdf STW42N60M2-EP THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW42N65M5 STW42N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA3E9B488F8FC80D6&compId=stx42n65m5.pdf?ci_sign=84767e3fefc59260ae90d1bf7b5fbb703bf73865 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW43N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D481FEC0D2&compId=stw43n60dm2.pdf?ci_sign=67af73fb2a420579a9a2844c36e5eff1eb19d32b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45N60DM2AG STW45N60DM2AG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796B7908B149E28&compId=STW45N60DM2AG-DTE.pdf?ci_sign=df94e5ba03bb5f8e64d218ad3d566fca90bc0916 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45N60DM6 STW45N60DM6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593BAA0D2&compId=stw45n60dm6.pdf?ci_sign=0b83e30141883058dceb330fdf65ebbb75ccb8e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 19A; Idm: 95A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45N65M5 STW45N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E972B5DB7CE745&compId=STF45N65M5.pdf?ci_sign=46e151def6ce9b3a5f8b8bcb10528c54b707480a Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45NM50 STW45NM50 STMicroelectronics pVersion=0046&contRep=ZT&docId=E1C05932594143F1A6F5005056AB5A8F&compId=stw45nm50.pdf?ci_sign=0e95be81e5a68adb9f0d628ba8aa4577337e76ef description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Drain-source voltage: 500V
Drain current: 28.4A
On-state resistance: 0.1Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.86 EUR
9+8.17 EUR
10+7.71 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STW45NM60 STW45NM60 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796B85D27069E28&compId=STW45NM60-DTE.pdf?ci_sign=a2039fae9722531599db627879f6b9fa8df6a423 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.87 EUR
10+7.39 EUR
11+6.99 EUR
120+6.88 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
STW46NF30 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFD860D2&compId=stw46nf30.pdf?ci_sign=3ec9dafb3a435ba2e1dda171365f086cd26374e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 27A; Idm: 168A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 27A
Pulsed drain current: 168A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFD9A0D2&compId=stw48n60dm2.pdf?ci_sign=3858a4b1e3e19d43f332543ffc77176cf0a5c4cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M2 STW48N60M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFDAE0D2&compId=stw48n60m2.pdf?ci_sign=542107aff25619da9539fc80be2fb10fe2d3f122 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.51 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M2-4 STW48N60M2-4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BA20809C9E28&compId=STW48N60M2-4-DTE.pdf?ci_sign=946c46c39529b27feda9a54310a84dc38a896ac1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.41 EUR
10+7.42 EUR
11+7.02 EUR
120+6.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D8C2F4C0D2&compId=stw48n60m6.pdf?ci_sign=dd934343a2cd0bb1ccaec9fba1e26c15f15f7de9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 70nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M6-4 STW48N60M6-4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFDC20D2&compId=stw48n60m6-4.pdf?ci_sign=925f714fb1f1ab07bc3f6c584db50b789db289a2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.88 EUR
11+6.64 EUR
120+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
STW48NM60N STW48NM60N STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BAC494063E28&compId=STW48NM60N-DTE.pdf?ci_sign=f97d03bc4621c3c581679047a2604f83e02e3493 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.55 EUR
17+4.22 EUR
2010+4.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW4N150 STW4N150 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA3F90E27898469&compId=STP4N150.pdf?ci_sign=ed5d2195d1ad29e80cb52802d378fe45a63326cf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Mounting: THT
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.35 EUR
12+6.13 EUR
25+5.91 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
STW50N65DM2AG STW50N65DM2AG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BC345EBF9E28&compId=STW50N65DM2AG-DTE.pdf?ci_sign=7e19b9878aeeff1f010401f9c95969e378b82c1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Power dissipation: 300W
Case: TO247
Mounting: THT
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 70mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW50N65DM6 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D8C2F600D2&compId=stw50n65dm6.pdf?ci_sign=513f29e15a0680fbe30032743cb559cb0f59572b Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 120A
Drain-source voltage: 650V
Drain current: 21A
On-state resistance: 91mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW52NK25Z STW52NK25Z STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BD65A6A4DE28&compId=STW52NK25Z-DTE.pdf?ci_sign=d7c59527e40363706249ab1a35e533c5ea9d1db6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 32.76A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 32.76A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N60DM2 STW56N60DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C02EE035DE28&compId=STW56N60DM2-DTE.pdf?ci_sign=339e4460792a315cff6b641d33e58c4456fb9bfc Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N60M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B658024460D2&compId=stw56n60m2.pdf?ci_sign=96090f86463f6b90348f251f18cf31b23086d84e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N60M2-4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D8C2F740D2&compId=stw56n60m2-4.pdf?ci_sign=7871c2772d6cb6044434ac0e1085c8e57786eab3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65DM2 STW56N65DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C1EF19FD5E28&compId=STW56N65DM2-DTE.pdf?ci_sign=014030dd2619b39ad0d4d3a44f5c254dbcac94b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.61 EUR
8+9.51 EUR
30+9.34 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65M2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B6580246E0D2&compId=stw56n65m2.pdf?ci_sign=179173f7a110c5fcc3cfd5f1c43d19da4202bd8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65M2-4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B6580245A0D2&compId=stw56n65m2-4.pdf?ci_sign=5e318a1744eb9adcde5bef832d8b4674a6bb8486 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW57N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B61C975080D2&compId=stw57n65m5.pdf?ci_sign=08864c3fcfb787d8e05e3633e4253705b8013261 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW57N65M5-4 STW57N65M5-4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C416F0BB5E28&compId=STW57N65M5-4-DTE.pdf?ci_sign=4cbd6285023f6268598e6ceebfc1c95fa178c344 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Features of semiconductor devices: Kelvin terminal
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
5+17.5 EUR
7+10.41 EUR
8+9.84 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STW58N60DM2AG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B67014C120D2&compId=stw58n60dm2ag.pdf?ci_sign=3e74a88ac74b0606c3e771bdaa7f3e2a07cbb3f2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW58N65DM2AG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B67014C260D2&compId=stw58n65dm2ag.pdf?ci_sign=d3a3d980a86f71266c3c288922d1a1c8a094fc65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW26N65DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B4FE16CDE0D2&compId=stw26n65dm2.pdf?ci_sign=9c157ec2ce301fe3b09b0e61fcccd4e67637dffc
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW26NM50 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796AB7458915E28&compId=STW26NM50-DTE.pdf?ci_sign=498e2078d94698a68e0e529722c9c5b2da34d361
STW26NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Case: TO247
Drain-source voltage: 500V
Drain current: 18.9A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 313W
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.75 EUR
15+4.8 EUR
16+4.53 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW26NM60N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796ADD753C07E28&compId=STW26NM60N-DTE.pdf?ci_sign=ea054b2d8bb283dc31355dfcb068e6127043945a
STW26NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 115 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.48 EUR
30+2.46 EUR
31+2.32 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
STW27N60M2-EP en.DM00251846.pdf
Hersteller: STMicroelectronics
STW27N60M2-EP THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW28N60DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B50B365380D2&compId=stw28n60dm2.pdf?ci_sign=936148c3be1f1e238d31e1eece3b8c8f9761ea54
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ DM2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW28N60M2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7975CB8F4DA9E28&compId=STx28N60M2-DTE.pdf?ci_sign=df0efbd07c4977842c9371e9e730180eb67694e4
STW28N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.75 EUR
19+3.76 EUR
60+2.86 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
STW28N65M2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B50B3655C0D2&compId=stw28n65m2.pdf?ci_sign=2b51429875914375958913d5883b0a27b7f644a9
STW28N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
3+23.84 EUR
5+14.3 EUR
13+5.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STW28NM50N en.CD00271786.pdf
Hersteller: STMicroelectronics
STW28NM50N THT N channel transistors
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.12 EUR
27+2.73 EUR
28+2.57 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
STW30N65M5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593A700D2&compId=stw30n65m5.pdf?ci_sign=09f93463e8e5ed69ea6068bf5d5c533194f0d75f
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Gate charge: 64nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 88A
Mounting: THT
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.39 EUR
15+5 EUR
16+4.73 EUR
510+4.56 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW30N80K5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5997DA0C0D2&compId=stw30n80k5.pdf?ci_sign=9d6049b0ebae284e19df584c158f0ae5b9fefcdc
STW30N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.44 EUR
9+8.21 EUR
10+7.75 EUR
600+7.45 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STW31N65M5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EC0607E61834745&compId=STW31N65M5.pdf?ci_sign=6e86743506f5fb85b665b2710470845c741c89ed
STW31N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW32NM50N pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5997DA200D2&compId=stw32nm50n.pdf?ci_sign=72569432bbf5fe7f71ee0b3e87cd0cb703bfc8d0
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW33N60DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593AC40D2&compId=stw33n60dm2.pdf?ci_sign=e586b9aaf8b023ed71d90191c2409c35ec09056c
STW33N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.42 EUR
14+5.32 EUR
15+5.03 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW33N60M6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593AD80D2&compId=stw33n60m6.pdf?ci_sign=a434ccaab68579aa576acf32d05e9d69f163f57d
STW33N60M6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW34N65M5 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B797698F371C1E28&compId=STx34N65M5-DTE.pdf?ci_sign=4da573b778378b60dbb6e68615eb48ebb234bae8
STW34N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW34NM60N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796AF802AE71E28&compId=STW34NM60N-DTE.pdf?ci_sign=040baad4022de1b6f2dc25d386c2623852f2c429
STW34NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 326 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.37 EUR
16+4.58 EUR
17+4.33 EUR
990+4.19 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STW34NM60ND pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7976B36A2DB9E28&compId=STx34NM60ND-DTE.pdf?ci_sign=e289cc0d626f0f2806aaec98cb7ab1e097b96ee3
STW34NM60ND
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.36 EUR
15+4.8 EUR
16+4.55 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
STW35N60DM2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796B26C767B9E28&compId=STW35N60DM2-DTE.pdf?ci_sign=26856859e0c552981a2b1b94929520fa2a3defbe
STW35N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW35N65DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593AEC0D2&compId=stw35n65dm2.pdf?ci_sign=c5f2bbab7ad81e88fb5aebdb3ade95dd140c4af3
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 93mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 56.3nC
Gate-source voltage: ±25V
Pulsed drain current: 90A
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW36N60M6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B000D2&compId=stw36n60m6.pdf?ci_sign=b06176704a89c4696a7c80679a6fa51127a81fe2
STW36N60M6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44.3nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW37N60DM2AG pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B140D2&compId=stw37n60dm2ag.pdf?ci_sign=39ae9f9cacacd3e8c470585f341ff5b9c725ca9c
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW38N65M5 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B79770B36DD15E28&compId=STx38N65M5-DTE.pdf?ci_sign=7ccd622a07229b7c54bb6403fa974b71e4668507
STW38N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 19A; 190W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW38N65M5-4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B280D2&compId=stw38n65m5-4.pdf?ci_sign=836abd2fb157fc0ba64d64e3bd0bfa6e24b26e67
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW3N150 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78AB0CEF9EB1F8745&compId=STP3N150.pdf?ci_sign=4b6e46b298994f0dccd5fe12e8993c8059a20d35
STW3N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.83 EUR
17+4.22 EUR
18+4.05 EUR
30+3.95 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
STW3N170 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B3C0D2&compId=stw3n170.pdf?ci_sign=cdfb834dd7c03e624436937e5e771575b71df3a8
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1.6A
Pulsed drain current: 10.4A
Power dissipation: 0.16W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N60M2-4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B500D2&compId=stw40n60m2-4.pdf?ci_sign=e2359af57e280011cb66e3204eb846b2159cb739
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N65M2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593B640D2&compId=stw40n65m2.pdf?ci_sign=8a74edb97f785fec556157f7a5aeafa26f773dab
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 56.5nC
Kind of package: tube
Polarisation: unipolar
Drain current: 20A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Pulsed drain current: 128A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N90K5 en.DM00265509.pdf
Hersteller: STMicroelectronics
STW40N90K5 THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+26.88 EUR
5+16.57 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STW40N95DK5 en.DM00094303.pdf
Hersteller: STMicroelectronics
STW40N95DK5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40N95K5 en.DM00119299.pdf
Hersteller: STMicroelectronics
STW40N95K5 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW40NF20 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B79772AF26FB1E28&compId=STx40NF20-DTE.pdf?ci_sign=cb38e43588a08d8c3a99878f3c254d9f3a6aa85f
STW40NF20
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO247
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.65 EUR
18+3.98 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
STW42N60M2-EP STx42N60M2-EP.pdf
Hersteller: STMicroelectronics
STW42N60M2-EP THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW42N65M5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA3E9B488F8FC80D6&compId=stx42n65m5.pdf?ci_sign=84767e3fefc59260ae90d1bf7b5fbb703bf73865
STW42N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW43N60DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D481FEC0D2&compId=stw43n60dm2.pdf?ci_sign=67af73fb2a420579a9a2844c36e5eff1eb19d32b
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45N60DM2AG pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796B7908B149E28&compId=STW45N60DM2AG-DTE.pdf?ci_sign=df94e5ba03bb5f8e64d218ad3d566fca90bc0916
STW45N60DM2AG
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45N60DM6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B58593BAA0D2&compId=stw45n60dm6.pdf?ci_sign=0b83e30141883058dceb330fdf65ebbb75ccb8e7
STW45N60DM6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 19A; Idm: 95A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 95A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45N65M5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E972B5DB7CE745&compId=STF45N65M5.pdf?ci_sign=46e151def6ce9b3a5f8b8bcb10528c54b707480a
STW45N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW45NM50 description pVersion=0046&contRep=ZT&docId=E1C05932594143F1A6F5005056AB5A8F&compId=stw45nm50.pdf?ci_sign=0e95be81e5a68adb9f0d628ba8aa4577337e76ef
STW45NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Technology: MDmesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Drain-source voltage: 500V
Drain current: 28.4A
On-state resistance: 0.1Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.86 EUR
9+8.17 EUR
10+7.71 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STW45NM60 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796B85D27069E28&compId=STW45NM60-DTE.pdf?ci_sign=a2039fae9722531599db627879f6b9fa8df6a423
STW45NM60
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.87 EUR
10+7.39 EUR
11+6.99 EUR
120+6.88 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
STW46NF30 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFD860D2&compId=stw46nf30.pdf?ci_sign=3ec9dafb3a435ba2e1dda171365f086cd26374e6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 27A; Idm: 168A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 27A
Pulsed drain current: 168A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60DM2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFD9A0D2&compId=stw48n60dm2.pdf?ci_sign=3858a4b1e3e19d43f332543ffc77176cf0a5c4cd
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFDAE0D2&compId=stw48n60m2.pdf?ci_sign=542107aff25619da9539fc80be2fb10fe2d3f122
STW48N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M2-4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BA20809C9E28&compId=STW48N60M2-4-DTE.pdf?ci_sign=946c46c39529b27feda9a54310a84dc38a896ac1
STW48N60M2-4
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.41 EUR
10+7.42 EUR
11+7.02 EUR
120+6.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D8C2F4C0D2&compId=stw48n60m6.pdf?ci_sign=dd934343a2cd0bb1ccaec9fba1e26c15f15f7de9
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 70nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW48N60M6-4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B64CCFDC20D2&compId=stw48n60m6-4.pdf?ci_sign=925f714fb1f1ab07bc3f6c584db50b789db289a2
STW48N60M6-4
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.88 EUR
11+6.64 EUR
120+6.38 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
STW48NM60N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BAC494063E28&compId=STW48NM60N-DTE.pdf?ci_sign=f97d03bc4621c3c581679047a2604f83e02e3493
STW48NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.55 EUR
17+4.22 EUR
2010+4.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STW4N150 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DA3F90E27898469&compId=STP4N150.pdf?ci_sign=ed5d2195d1ad29e80cb52802d378fe45a63326cf
STW4N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Mounting: THT
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 1.5kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.35 EUR
12+6.13 EUR
25+5.91 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
STW50N65DM2AG pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BC345EBF9E28&compId=STW50N65DM2AG-DTE.pdf?ci_sign=7e19b9878aeeff1f010401f9c95969e378b82c1b
STW50N65DM2AG
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Power dissipation: 300W
Case: TO247
Mounting: THT
Kind of package: tube
Technology: MDmesh™ DM2
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 70mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW50N65DM6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D8C2F600D2&compId=stw50n65dm6.pdf?ci_sign=513f29e15a0680fbe30032743cb559cb0f59572b
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 120A
Drain-source voltage: 650V
Drain current: 21A
On-state resistance: 91mΩ
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW52NK25Z pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796BD65A6A4DE28&compId=STW52NK25Z-DTE.pdf?ci_sign=d7c59527e40363706249ab1a35e533c5ea9d1db6
STW52NK25Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 32.76A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 32.76A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N60DM2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C02EE035DE28&compId=STW56N60DM2-DTE.pdf?ci_sign=339e4460792a315cff6b641d33e58c4456fb9bfc
STW56N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ DM2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N60M2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B658024460D2&compId=stw56n60m2.pdf?ci_sign=96090f86463f6b90348f251f18cf31b23086d84e
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N60M2-4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D8C2F740D2&compId=stw56n60m2-4.pdf?ci_sign=7871c2772d6cb6044434ac0e1085c8e57786eab3
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65DM2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C1EF19FD5E28&compId=STW56N65DM2-DTE.pdf?ci_sign=014030dd2619b39ad0d4d3a44f5c254dbcac94b8
STW56N65DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.61 EUR
8+9.51 EUR
30+9.34 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65M2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B6580246E0D2&compId=stw56n65m2.pdf?ci_sign=179173f7a110c5fcc3cfd5f1c43d19da4202bd8a
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65M2-4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B6580245A0D2&compId=stw56n65m2-4.pdf?ci_sign=5e318a1744eb9adcde5bef832d8b4674a6bb8486
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW57N65M5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B61C975080D2&compId=stw57n65m5.pdf?ci_sign=08864c3fcfb787d8e05e3633e4253705b8013261
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW57N65M5-4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C416F0BB5E28&compId=STW57N65M5-4-DTE.pdf?ci_sign=4cbd6285023f6268598e6ceebfc1c95fa178c344
STW57N65M5-4
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Features of semiconductor devices: Kelvin terminal
Technology: MDmesh™ V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+17.5 EUR
7+10.41 EUR
8+9.84 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STW58N60DM2AG pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B67014C120D2&compId=stw58n60dm2ag.pdf?ci_sign=3e74a88ac74b0606c3e771bdaa7f3e2a07cbb3f2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW58N65DM2AG pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B67014C260D2&compId=stw58n65dm2ag.pdf?ci_sign=d3a3d980a86f71266c3c288922d1a1c8a094fc65
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 285 570 855 1140 1248 1249 1250 1251 1252 1253 1254 1255 1256 1257 1258 1425 1710 1995 2280 2565 2850 2856  [ Nächste Seite >> ]