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STD36NH02L STD36NH02L STMicroelectronics en.CD00107793.pdf Description: MOSFET N-CH 24V 30A DPAK
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STD3NK100Z STD3NK100Z STMicroelectronics en.CD00158273.pdf Description: MOSFET N-CH 1000V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
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STD40NF10 STD40NF10 STMicroelectronics en.CD00291761.pdf Description: MOSFET N-CH 100V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
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STD50N03L STD50N03L STMicroelectronics STD50N03L_-1.pdf Description: MOSFET N-CH 30V 40A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD50N03L-1 STD50N03L-1 STMicroelectronics STD50N03L_-1.pdf Description: MOSFET N-CH 30V 40A IPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
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STD60N3LH5 STD60N3LH5 STMicroelectronics en.CD00174698.pdf Description: MOSFET N-CH 30V 48A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD60N55F3 STD60N55F3 STMicroelectronics en.CD00152203.pdf Description: MOSFET N-CH 55V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD65N55F3 STD65N55F3 STMicroelectronics en.CD00152204.pdf Description: MOSFET N-CH 55V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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STD7NM50N STD7NM50N STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A DPAK
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
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STD7NM50N-1 STD7NM50N-1 STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A IPAK
Part Status: Obsolete
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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STD85N3LH5 STD85N3LH5 STMicroelectronics en.CD00168872.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD8NM60N STD8NM60N STMicroelectronics en.CD00155842.pdf Description: MOSFET N-CH 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD8NM60N-1 STD8NM60N-1 STMicroelectronics en.CD00155842.pdf Description: MOSFET N-CH 600V 7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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STD90N03L STD90N03L STMicroelectronics en.CD00143620.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD90N03L-1 STD90N03L-1 STMicroelectronics en.CD00143620.pdf Description: MOSFET N-CH 30V 80A IPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
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STD9NM50N STD9NM50N STMicroelectronics en.DM00039035.pdf Description: MOSFET N-CH 500V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD9NM50N-1 STMicroelectronics STX9NM50N(-1)_Rev1.pdf Description: MOSFET N-CH 500V 7.5A IPAK
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STDS75M2E STDS75M2E STMicroelectronics en.CD00153512.pdf Description: SENSOR DIGITAL -55C-125C 8SO
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STF10NM65N STF10NM65N STMicroelectronics en.CD00174879.pdf Description: MOSFET N-CH 650V 9A TO220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
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STF12NM60N STF12NM60N STMicroelectronics STx12NM60N(-1).pdf Description: MOSFET N-CH 600V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF13NM50N STF13NM50N STMicroelectronics STB,STF,STP,STW13NM50N.pdf Description: MOSFET N-CH 500V 12A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
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STF15NM60N STF15NM60N STMicroelectronics en.CD00156434.pdf Description: MOSFET N-CH 600V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
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STF16NF25 STF16NF25 STMicroelectronics en.CD00173646.pdf Description: MOSFET N-CH 250V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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STF16NM50N STF16NM50N STMicroelectronics STx16NM50N.pdf Description: MOSFET N-CH 500V 15A TO220FP
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
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STF17NF25 STF17NF25 STMicroelectronics STx17NF25_Rev1.pdf Description: MOSFET N-CH 250V 17A TO220FP
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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STF19NF20 STF19NF20 STMicroelectronics en.CD00142659.pdf Description: MOSFET N-CH 200V 15A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF23NM60N STF23NM60N STMicroelectronics en.CD00169816.pdf Description: MOSFET N-CH 600V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF3NK100Z STF3NK100Z STMicroelectronics en.CD00158273.pdf Description: MOSFET N-CH 1000V 2.5A TO220FP
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
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STF7NM50N STF7NM50N STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF8NM60N STF8NM60N STMicroelectronics en.CD00155842.pdf Description: MOSFET N-CH 600V 7A TO220FP
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
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STF9NM50N STF9NM50N STMicroelectronics STX9NM50N(-1)_Rev1.pdf Description: MOSFET N-CH 500V 7.5A TO-220FP
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STG3159DTR STMicroelectronics en.CD00146989.pdf Description: IC SWITCH SPDT X 1 1.1OHM 6DFN
Current - Leakage (IS(off)) (Max): 20nA
Channel Capacitance (CS(off), CD(off)): 6pF
Switch Time (Ton, Toff) (Max): 23ns, 21ns
Number of Circuits: 1
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 100kHz
Charge Injection: 33pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-DFN (1.2x1)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.1Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STG3384DTR STMicroelectronics CD00145135.pdf Description: IC SWITCH DUAL SPST 10TDFN
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STG4259BJR STMicroelectronics en.CD00143982.pdf Description: IC SW SPDTX2 300MOHM 11FLIPCHIP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 20nA
Channel Capacitance (CS(off), CD(off)): 30pF
Switch Time (Ton, Toff) (Max): 38ns, 17ns
Channel-to-Channel Matching (ΔRon): 3mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -93dB @ 100kHz
Charge Injection: 103pC
Voltage - Supply, Single (V+): 1.65V ~ 4.8V
Supplier Device Package: 11-FlipChip
-3db Bandwidth: 40MHz
On-State Resistance (Max): 300mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 11-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
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STGB8NC60KDT4 STGB8NC60KDT4 STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 15A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Reverse Recovery Time (trr): 23.5 ns
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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STGB8NC60KT4 STGB8NC60KT4 STMicroelectronics en.CD00171951.pdf Description: IGBT 600V 15A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGBL6NC60DT4 STGBL6NC60DT4 STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 14A 56W D2PAK
Power - Max: 56 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 12 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Td (on/off) @ 25°C: 6.7ns/46ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STGD8NC60KDT4 STGD8NC60KDT4 STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 15A 62W DPAK
Power - Max: 62 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Reverse Recovery Time (trr): 23.5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGD8NC60KT4 STGD8NC60KT4 STMicroelectronics en.CD00171951.pdf Description: IGBT 600V 15A 62W DPAK
Power - Max: 62 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STGDL6NC60DT4 STGDL6NC60DT4 STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 13A 50W DPAK
Power - Max: 50 W
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 12 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Td (on/off) @ 25°C: 6.7ns/46ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Collector Pulsed (Icm): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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STGF8NC60KD STGF8NC60KD STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 7A TO-220FP
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Reverse Recovery Time (trr): 23.5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 24 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: TO-220FP
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STGFL6NC60D STGFL6NC60D STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 7A 22W TO220FP
Gate Charge: 12 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Td (on/off) @ 25°C: 6.7ns/46ns
Supplier Device Package: TO-220FP
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 22 W
Current - Collector Pulsed (Icm): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Produkt ist nicht verfügbar
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STGP8NC60K STGP8NC60K STMicroelectronics en.CD00171951.pdf Description: IGBT 600V 15A TO-220
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STGP8NC60KD STGP8NC60KD STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
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8+2.95 EUR
50+1.4 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.89 EUR
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STGPL6NC60D STGPL6NC60D STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 14A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 56 W
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STGW19NC60WD STGW19NC60WD STMicroelectronics stgp19nc60wd.pdf Description: IGBT 600V 42A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/90ns
Switching Energy: 81µJ (on), 125µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
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STGW30N90D STGW30N90D STMicroelectronics Description: IGBT 900V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/275ns
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Test Condition: 900V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 220 W
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STGW30NC60KD STGW30NC60KD STMicroelectronics en.CD00175352.pdf Description: IGBT 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/120ns
Switching Energy: 350µJ (on), 435µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 200 W
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2+15.48 EUR
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120+7.59 EUR
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STGW35NC120HD STGW35NC120HD STMicroelectronics STGW35NC120HD.pdf Description: IGBT 1200V 60A 235W TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 235 W
Current - Collector Pulsed (Icm): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 110 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Td (on/off) @ 25°C: 29ns/275ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Reverse Recovery Time (trr): 152 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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STGW35NC60WD STGW35NC60WD STMicroelectronics STGW35NC60WD.pdf Description: IGBT 600V 70A 260W TO247
Switching Energy: 305µJ (on), 181µJ (off)
Td (on/off) @ 25°C: 29.5ns/118ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 260 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 102 nC
Test Condition: 390V, 20A, 10Ohm, 15V
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STGY50NC60WD STGY50NC60WD STMicroelectronics STGY50NC60WD.pdf Description: IGBT 600V 110A MAX247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 195 nC
Test Condition: 390V, 40A, 10Ohm, 15V
Switching Energy: 365µJ (on), 560µJ (off)
Td (on/off) @ 25°C: 52ns/240ns
Supplier Device Package: MAX247™
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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120+15.91 EUR
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STI15NM60N STI15NM60N STMicroelectronics en.CD00156434.pdf Description: MOSFET N-CH 600V 14A I2PAK
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STI16NM50N STI16NM50N STMicroelectronics en.CD00171994.pdf Description: MOSFET N-CH 500V 15A I2PAK
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STI17NF25 STI17NF25 STMicroelectronics STx17NF25_Rev1.pdf Description: MOSFET N-CH 250V 17A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI23NM60N STI23NM60N STMicroelectronics en.CD00169816.pdf Description: MOSFET N-CH 600V 19A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STL6NM60N STL6NM60N STMicroelectronics en.CD00157475.pdf Description: MOSFET N-CH 600V 5.75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFLAT™ (5x5)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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STLM75M2E STLM75M2E STMicroelectronics en.CD00153511.pdf Description: SENSOR DIGITAL -55C-125C 8SO
Accuracy - Highest (Lowest): ±2°C (±3°C)
Test Condition: -25°C ~ 100°C (-55°C ~ 125°C)
Supplier Device Package: 8-SOIC
Resolution: 9 b
Sensor Type: Digital, Local
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: I2C/SMBus
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Packaging: Tube
Sensing Temperature - Local: -55°C ~ 125°C
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STM32F101T6U6 STM32F101T6U6 STMicroelectronics en.CD00210837.pdf Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Part Status: Obsolete
Supplier Device Package: 36-VFQFPN (6x6)
Peripherals: DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 6K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 36MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Number of I/O: 26
Package / Case: 36-VFQFN Exposed Pad
Packaging: Tray
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STM32F103T6U6 STM32F103T6U6 STMicroelectronics en.CD00210843.pdf Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 36-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 26
Part Status: Obsolete
Supplier Device Package: 36-VFQFPN (6x6)
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STM32F103T8U6 STM32F103T8U6 STMicroelectronics STM32F103x8%2CB.pdf description Description: IC MCU 32BIT 64KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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2+11.85 EUR
10+9.1 EUR
25+8.41 EUR
100+7.66 EUR
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STD36NH02L en.CD00107793.pdf
STD36NH02L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 30A DPAK
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STD3NK100Z en.CD00158273.pdf
STD3NK100Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
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STD40NF10 en.CD00291761.pdf
STD40NF10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
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2500+0.99 EUR
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STD50N03L STD50N03L_-1.pdf
STD50N03L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD50N03L-1 STD50N03L_-1.pdf
STD50N03L-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 40A IPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
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STD60N3LH5 en.CD00174698.pdf
STD60N3LH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 48A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD60N55F3 en.CD00152203.pdf
STD60N55F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD65N55F3 en.CD00152204.pdf
STD65N55F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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STD7NM50N STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
STD7NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A DPAK
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
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STD7NM50N-1 STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
STD7NM50N-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A IPAK
Part Status: Obsolete
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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STD85N3LH5 en.CD00168872.pdf
STD85N3LH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD8NM60N en.CD00155842.pdf
STD8NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD8NM60N-1 en.CD00155842.pdf
STD8NM60N-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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STD90N03L en.CD00143620.pdf
STD90N03L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD90N03L-1 en.CD00143620.pdf
STD90N03L-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A IPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: IPAK
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STD9NM50N en.DM00039035.pdf
STD9NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD9NM50N-1 STX9NM50N(-1)_Rev1.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A IPAK
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STDS75M2E en.CD00153512.pdf
STDS75M2E
Hersteller: STMicroelectronics
Description: SENSOR DIGITAL -55C-125C 8SO
Produkt ist nicht verfügbar
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STF10NM65N en.CD00174879.pdf
STF10NM65N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 9A TO220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
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STF12NM60N STx12NM60N(-1).pdf
STF12NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF13NM50N STB,STF,STP,STW13NM50N.pdf
STF13NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
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STF15NM60N en.CD00156434.pdf
STF15NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
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STF16NF25 en.CD00173646.pdf
STF16NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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STF16NM50N STx16NM50N.pdf
STF16NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 15A TO220FP
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
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STF17NF25 STx17NF25_Rev1.pdf
STF17NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 17A TO220FP
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
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STF19NF20 en.CD00142659.pdf
STF19NF20
Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 15A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
50+1.23 EUR
100+1.21 EUR
500+1.13 EUR
1000+1.04 EUR
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STF23NM60N en.CD00169816.pdf
STF23NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF3NK100Z en.CD00158273.pdf
STF3NK100Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 2.5A TO220FP
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
auf Bestellung 670 Stücke:
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AnzahlPrivatkunde
3+9.64 EUR
50+4.99 EUR
100+4.53 EUR
500+3.75 EUR
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STF7NM50N STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
STF7NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF8NM60N en.CD00155842.pdf
STF8NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7A TO220FP
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
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STF9NM50N STX9NM50N(-1)_Rev1.pdf
STF9NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A TO-220FP
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STG3159DTR en.CD00146989.pdf
Hersteller: STMicroelectronics
Description: IC SWITCH SPDT X 1 1.1OHM 6DFN
Current - Leakage (IS(off)) (Max): 20nA
Channel Capacitance (CS(off), CD(off)): 6pF
Switch Time (Ton, Toff) (Max): 23ns, 21ns
Number of Circuits: 1
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 100kHz
Charge Injection: 33pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 6-DFN (1.2x1)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.1Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STG3384DTR CD00145135.pdf
Hersteller: STMicroelectronics
Description: IC SWITCH DUAL SPST 10TDFN
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STG4259BJR en.CD00143982.pdf
Hersteller: STMicroelectronics
Description: IC SW SPDTX2 300MOHM 11FLIPCHIP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 20nA
Channel Capacitance (CS(off), CD(off)): 30pF
Switch Time (Ton, Toff) (Max): 38ns, 17ns
Channel-to-Channel Matching (ΔRon): 3mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -93dB @ 100kHz
Charge Injection: 103pC
Voltage - Supply, Single (V+): 1.65V ~ 4.8V
Supplier Device Package: 11-FlipChip
-3db Bandwidth: 40MHz
On-State Resistance (Max): 300mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 11-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGB8NC60KDT4 en.CD00171973.pdf
STGB8NC60KDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 15A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Reverse Recovery Time (trr): 23.5 ns
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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STGB8NC60KT4 en.CD00171951.pdf
STGB8NC60KT4
Hersteller: STMicroelectronics
Description: IGBT 600V 15A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGBL6NC60DT4 en.CD00166643.pdf
STGBL6NC60DT4
Hersteller: STMicroelectronics
Description: IGBT 600V 14A 56W D2PAK
Power - Max: 56 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 12 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Td (on/off) @ 25°C: 6.7ns/46ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGD8NC60KDT4 en.CD00171973.pdf
STGD8NC60KDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 15A 62W DPAK
Power - Max: 62 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Reverse Recovery Time (trr): 23.5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGD8NC60KT4 en.CD00171951.pdf
STGD8NC60KT4
Hersteller: STMicroelectronics
Description: IGBT 600V 15A 62W DPAK
Power - Max: 62 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGDL6NC60DT4 en.CD00166643.pdf
STGDL6NC60DT4
Hersteller: STMicroelectronics
Description: IGBT 600V 13A 50W DPAK
Power - Max: 50 W
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 12 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Td (on/off) @ 25°C: 6.7ns/46ns
Supplier Device Package: DPAK
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Collector Pulsed (Icm): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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STGF8NC60KD en.CD00171973.pdf
STGF8NC60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 7A TO-220FP
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Reverse Recovery Time (trr): 23.5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 24 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: TO-220FP
Produkt ist nicht verfügbar
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STGFL6NC60D en.CD00166643.pdf
STGFL6NC60D
Hersteller: STMicroelectronics
Description: IGBT 600V 7A 22W TO220FP
Gate Charge: 12 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Td (on/off) @ 25°C: 6.7ns/46ns
Supplier Device Package: TO-220FP
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 22 W
Current - Collector Pulsed (Icm): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
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STGP8NC60K en.CD00171951.pdf
STGP8NC60K
Hersteller: STMicroelectronics
Description: IGBT 600V 15A TO-220
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Gate Charge: 19 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STGP8NC60KD en.CD00171973.pdf
STGP8NC60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
auf Bestellung 1996 Stücke:
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AnzahlPrivatkunde
8+2.95 EUR
50+1.4 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.89 EUR
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STGPL6NC60D en.CD00166643.pdf
STGPL6NC60D
Hersteller: STMicroelectronics
Description: IGBT 600V 14A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 56 W
Produkt ist nicht verfügbar
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STGW19NC60WD stgp19nc60wd.pdf
STGW19NC60WD
Hersteller: STMicroelectronics
Description: IGBT 600V 42A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/90ns
Switching Energy: 81µJ (on), 125µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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STGW30N90D
STGW30N90D
Hersteller: STMicroelectronics
Description: IGBT 900V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/275ns
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Test Condition: 900V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 220 W
Produkt ist nicht verfügbar
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STGW30NC60KD en.CD00175352.pdf
STGW30NC60KD
Hersteller: STMicroelectronics
Description: IGBT 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/120ns
Switching Energy: 350µJ (on), 435µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 200 W
auf Bestellung 2562 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.48 EUR
30+9.01 EUR
120+7.59 EUR
510+6.54 EUR
1020+6.32 EUR
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STGW35NC120HD STGW35NC120HD.pdf
STGW35NC120HD
Hersteller: STMicroelectronics
Description: IGBT 1200V 60A 235W TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 235 W
Current - Collector Pulsed (Icm): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 110 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Td (on/off) @ 25°C: 29ns/275ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Reverse Recovery Time (trr): 152 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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STGW35NC60WD STGW35NC60WD.pdf
STGW35NC60WD
Hersteller: STMicroelectronics
Description: IGBT 600V 70A 260W TO247
Switching Energy: 305µJ (on), 181µJ (off)
Td (on/off) @ 25°C: 29.5ns/118ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 260 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 102 nC
Test Condition: 390V, 20A, 10Ohm, 15V
Produkt ist nicht verfügbar
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STGY50NC60WD STGY50NC60WD.pdf
STGY50NC60WD
Hersteller: STMicroelectronics
Description: IGBT 600V 110A MAX247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 195 nC
Test Condition: 390V, 40A, 10Ohm, 15V
Switching Energy: 365µJ (on), 560µJ (off)
Td (on/off) @ 25°C: 52ns/240ns
Supplier Device Package: MAX247™
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 55 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 499 Stücke:
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AnzahlPrivatkunde
1+29.76 EUR
30+18.39 EUR
120+15.91 EUR
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STI15NM60N en.CD00156434.pdf
STI15NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A I2PAK
Produkt ist nicht verfügbar
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STI16NM50N en.CD00171994.pdf
STI16NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 15A I2PAK
Produkt ist nicht verfügbar
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STI17NF25 STx17NF25_Rev1.pdf
STI17NF25
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 17A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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STI23NM60N en.CD00169816.pdf
STI23NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 19A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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STL6NM60N en.CD00157475.pdf
STL6NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5.75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFLAT™ (5x5)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STLM75M2E en.CD00153511.pdf
STLM75M2E
Hersteller: STMicroelectronics
Description: SENSOR DIGITAL -55C-125C 8SO
Accuracy - Highest (Lowest): ±2°C (±3°C)
Test Condition: -25°C ~ 100°C (-55°C ~ 125°C)
Supplier Device Package: 8-SOIC
Resolution: 9 b
Sensor Type: Digital, Local
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: I2C/SMBus
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Packaging: Tube
Sensing Temperature - Local: -55°C ~ 125°C
Produkt ist nicht verfügbar
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STM32F101T6U6 en.CD00210837.pdf
STM32F101T6U6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Part Status: Obsolete
Supplier Device Package: 36-VFQFPN (6x6)
Peripherals: DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 6K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 36MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Number of I/O: 26
Package / Case: 36-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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STM32F103T6U6 en.CD00210843.pdf
STM32F103T6U6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 36-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 26
Part Status: Obsolete
Supplier Device Package: 36-VFQFPN (6x6)
Produkt ist nicht verfügbar
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STM32F103T8U6 description STM32F103x8%2CB.pdf
STM32F103T8U6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.85 EUR
10+9.1 EUR
25+8.41 EUR
100+7.66 EUR
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