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M24C64-DRMN3TP/K STMicroelectronics en.DM00051766.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Case: SOIC8
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.75 EUR
Mindestbestellmenge: 2500 Stücke
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SMBJ26A-TR SMBJ26A-TR STMicroelectronics SMBJ26A-TR.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷30.4V; 75A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...30.4V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
auf Bestellung 2324 Stücke:
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209+0.4 EUR
244+0.35 EUR
285+0.3 EUR
334+0.25 EUR
397+0.21 EUR
496+0.17 EUR
569+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 209 Stücke
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LF50CV LF50CV STMicroelectronics lfxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 444 Stücke:
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52+1.67 EUR
70+1.21 EUR
81+1.06 EUR
100+1 EUR
250+0.94 EUR
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BD677 BD677 STMicroelectronics BD678.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 170 Stücke:
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122+0.7 EUR
170+0.49 EUR
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SMBJ10A-TR SMBJ10A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.1÷11.7V; 184A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...11.7V
Max. forward impulse current: 184A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
auf Bestellung 2225 Stücke:
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120+0.71 EUR
184+0.46 EUR
272+0.31 EUR
319+0.26 EUR
500+0.19 EUR
1000+0.15 EUR
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1N5817 1N5817 STMicroelectronics 1N5819RL.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
363+0.24 EUR
394+0.21 EUR
550+0.15 EUR
642+0.13 EUR
728+0.12 EUR
1000+0.1 EUR
2000+0.088 EUR
Mindestbestellmenge: 313 Stücke
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STM32F051K8U7TR STMicroelectronics en.DM00039193.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 1
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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STL10N60M6 STMicroelectronics stl10n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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STM32F411RCT7 STM32F411RCT7 STMicroelectronics en.DM00115249.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; I2S; IrDA; MMC; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Operating temperature: -40...105°C
Kind of core: 32-bit
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
160+5.93 EUR
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STP35N60DM2 STP35N60DM2 STMicroelectronics STP35N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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Z0103MN 6AA4 Z0103MN 6AA4 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
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STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
Produkt ist nicht verfügbar
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TS912AIDT TS912AIDT STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 7710 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.83 EUR
59+1.46 EUR
63+1.36 EUR
70+1.23 EUR
100+1.07 EUR
250+0.98 EUR
500+0.92 EUR
1000+0.86 EUR
2500+0.79 EUR
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TS912IDT TS912IDT STMicroelectronics TS912IDT.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 4412 Stücke:
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55+1.57 EUR
63+1.36 EUR
69+1.24 EUR
79+1.08 EUR
86+1 EUR
100+0.93 EUR
250+0.88 EUR
2500+0.81 EUR
Mindestbestellmenge: 55 Stücke
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TS912BIDT TS912BIDT STMicroelectronics ts912b.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.5 EUR
41+2.07 EUR
45+1.93 EUR
50+1.74 EUR
100+1.5 EUR
250+1.36 EUR
500+1.31 EUR
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TS912ID TS912ID STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.57 EUR
64+1.34 EUR
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TS912IYDT TS912IYDT STMicroelectronics ts912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912AIYDT TS912AIYDT STMicroelectronics ts912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912BIYDT TS912BIYDT STMicroelectronics ts912b.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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BD243C BD243C STMicroelectronics BD244C-STMicroelectronics.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
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BD677A BD677A STMicroelectronics BD678.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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M24C02-FMN6TP M24C02-FMN6TP STMicroelectronics m24c01-r.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
439+0.19 EUR
463+0.18 EUR
1000+0.17 EUR
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STL15N65M5 STMicroelectronics stl15n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STFW40N60M2 STMicroelectronics en.DM00116766.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ACS102-6TA-TR ACS102-6TA-TR STMicroelectronics acs102-6t.pdf Category: Triacs
Description: Triac; 600V; TO92; 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Case: TO92
Gate current: 5mA
Mounting: THT
auf Bestellung 6000 Stücke:
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4000+0.3 EUR
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STD8N60DM2 STD8N60DM2 STMicroelectronics en.DM00184996.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STF18N60M2 STF18N60M2 STMicroelectronics en.DM00086774.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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1.5KE400CARL STMicroelectronics cd00000663.pdf Category: Diodes - Unclassified
Description: 1.5KE400CARL
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
1900+0.56 EUR
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1N5818 1N5818 STMicroelectronics 1N5819RL.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
407+0.21 EUR
463+0.18 EUR
544+0.15 EUR
642+0.13 EUR
715+0.12 EUR
747+0.11 EUR
1000+0.11 EUR
2000+0.098 EUR
Mindestbestellmenge: 239 Stücke
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LD3985M28R LD3985M28R STMicroelectronics ld3985.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
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BZW50-27RL STMicroelectronics cd00000695.pdf Category: Diodes - Unclassified
Description: BZW50-27RL
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.39 EUR
Mindestbestellmenge: 1000 Stücke
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STW9NK90Z STW9NK90Z STMicroelectronics STF9NK90Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
17+5.24 EUR
24+3.61 EUR
25+3.47 EUR
30+3.4 EUR
90+3.03 EUR
120+2.92 EUR
150+2.82 EUR
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STB6N60M2 STB6N60M2 STMicroelectronics en.DM00087513.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
Produkt ist nicht verfügbar
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STD6N60DM2 STD6N60DM2 STMicroelectronics std6n60dm2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STM32F427ZIT7 STM32F427ZIT7 STMicroelectronics en.DM00071990.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Supply voltage: 1.8...3.6V DC
Operating temperature: -40...105°C
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
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SM6T36A SM6T36A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 36V
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432+0.2 EUR
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582+0.14 EUR
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2500+0.12 EUR
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Z0107MA 2AL2 Z0107MA 2AL2 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Max. forward impulse current: 8A
Kind of package: Ammo Pack
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STPS5L40 STPS5L40 STMicroelectronics en.CD00002923.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
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435+0.19 EUR
575+0.14 EUR
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Z0405MH Z0405MH STMicroelectronics en.DM00908043.pdf Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
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139+0.61 EUR
188+0.45 EUR
235+0.36 EUR
270+0.32 EUR
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SM15T30A SM15T30A STMicroelectronics SM15T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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125+0.68 EUR
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SM15T30CA SM15T30CA STMicroelectronics SM15T.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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VNS3NV04PTR-E STMicroelectronics en.CD00232418.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
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SMCJ33CA-TR SMCJ33CA-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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103+0.83 EUR
139+0.61 EUR
156+0.55 EUR
500+0.44 EUR
1000+0.39 EUR
2500+0.36 EUR
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STL120N10F8 STL120N10F8 STMicroelectronics en.DM00852148.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
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40+2.18 EUR
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VL53L3CXV0DH/1 STMicroelectronics vl53l3cx.pdf Category: Unclassified
Description: VL53L3CXV0DH/1
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STF20N65M5 STF20N65M5 STMicroelectronics en.DM00076416.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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MJD45H11T4 MJD45H11T4 STMicroelectronics MJD44H11_MJD45H11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
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STP110N10F7 STP110N10F7 STMicroelectronics en.DM00072347.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
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BTB04-600SL BTB04-600SL STMicroelectronics BTB04-600SL-STMicroelectronics.pdf description Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: lighting application
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50+1.74 EUR
71+1.21 EUR
82+1.05 EUR
111+0.77 EUR
124+0.69 EUR
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STP16N65M2 STP16N65M2 STMicroelectronics en.DM00140964.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
Produkt ist nicht verfügbar
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STD16N65M2 STD16N65M2 STMicroelectronics en.DM00140850.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STH315N10F7-2 STMicroelectronics sth315n10f7-2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Produkt ist nicht verfügbar
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STH315N10F7-6 STMicroelectronics sth315n10f7-2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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STP200N3LL STP200N3LL STMicroelectronics en.DM00255610.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
On-state resistance: 2.4mΩ
Mounting: THT
Pulsed drain current: 480A
Power dissipation: 176.5W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
auf Bestellung 153 Stücke:
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LM833DT LM833DT STMicroelectronics LM833DT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
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274+0.31 EUR
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MC1458IDT MC1458IDT STMicroelectronics MC1458ID.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...105°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
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139+0.61 EUR
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MC1458DT MC1458DT STMicroelectronics mc1458.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: 0...70°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
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133+0.64 EUR
150+0.57 EUR
174+0.49 EUR
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221+0.38 EUR
500+0.36 EUR
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LD39150PT-R LD39150PT-R STMicroelectronics ld39150.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
auf Bestellung 2444 Stücke:
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LD39150PU-R STMicroelectronics ld39150.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STF4N80K5 STF4N80K5 STMicroelectronics en.DM00092669.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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38+2.28 EUR
62+1.38 EUR
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M24C64-DRMN3TP/K en.DM00051766.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Case: SOIC8
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2500+0.75 EUR
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SMBJ26A-TR SMBJ26A-TR.pdf
SMBJ26A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷30.4V; 75A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...30.4V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
auf Bestellung 2324 Stücke:
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209+0.4 EUR
244+0.35 EUR
285+0.3 EUR
334+0.25 EUR
397+0.21 EUR
496+0.17 EUR
569+0.15 EUR
1000+0.13 EUR
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LF50CV lfxx.pdf
LF50CV
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 444 Stücke:
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52+1.67 EUR
70+1.21 EUR
81+1.06 EUR
100+1 EUR
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BD677 BD678.pdf
BD677
Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 170 Stücke:
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122+0.7 EUR
170+0.49 EUR
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SMBJ10A-TR SMBJ-st.pdf
SMBJ10A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.1÷11.7V; 184A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...11.7V
Max. forward impulse current: 184A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
auf Bestellung 2225 Stücke:
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120+0.71 EUR
184+0.46 EUR
272+0.31 EUR
319+0.26 EUR
500+0.19 EUR
1000+0.15 EUR
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1N5817 1N5819RL.pdf
1N5817
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 2570 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
363+0.24 EUR
394+0.21 EUR
550+0.15 EUR
642+0.13 EUR
728+0.12 EUR
1000+0.1 EUR
2000+0.088 EUR
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STM32F051K8U7TR en.DM00039193.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 1
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STL10N60M6 stl10n60m6.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STM32F411RCT7 en.DM00115249.pdf
STM32F411RCT7
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; I2S; IrDA; MMC; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Operating temperature: -40...105°C
Kind of core: 32-bit
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
160+5.93 EUR
Mindestbestellmenge: 160 Stücke
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STP35N60DM2 STP35N60DM2.pdf
STP35N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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Z0103MN 6AA4 en.CD00002268.pdf
Z0103MN 6AA4
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
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STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
Produkt ist nicht verfügbar
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TS912AIDT TS912IDT.pdf
TS912AIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 7710 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.83 EUR
59+1.46 EUR
63+1.36 EUR
70+1.23 EUR
100+1.07 EUR
250+0.98 EUR
500+0.92 EUR
1000+0.86 EUR
2500+0.79 EUR
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TS912IDT description TS912IDT.pdf
TS912IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 4412 Stücke:
Lieferzeit 14-21 Tag (e)
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55+1.57 EUR
63+1.36 EUR
69+1.24 EUR
79+1.08 EUR
86+1 EUR
100+0.93 EUR
250+0.88 EUR
2500+0.81 EUR
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TS912BIDT description ts912b.pdf
TS912BIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)
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35+2.5 EUR
41+2.07 EUR
45+1.93 EUR
50+1.74 EUR
100+1.5 EUR
250+1.36 EUR
500+1.31 EUR
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TS912ID TS912IDT.pdf
TS912ID
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.57 EUR
64+1.34 EUR
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TS912IYDT ts912.pdf
TS912IYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912AIYDT ts912a.pdf
TS912AIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS912BIYDT ts912b.pdf
TS912BIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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BD243C BD244C-STMicroelectronics.pdf
BD243C
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Produkt ist nicht verfügbar
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BD677A BD678.pdf
BD677A
Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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M24C02-FMN6TP m24c01-r.pdf
M24C02-FMN6TP
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
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417+0.2 EUR
439+0.19 EUR
463+0.18 EUR
1000+0.17 EUR
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STL15N65M5 stl15n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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STFW40N60M2 en.DM00116766.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ACS102-6TA-TR acs102-6t.pdf
ACS102-6TA-TR
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; TO92; 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Case: TO92
Gate current: 5mA
Mounting: THT
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4000+0.3 EUR
Mindestbestellmenge: 4000 Stücke
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STD8N60DM2 en.DM00184996.pdf
STD8N60DM2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STF18N60M2 en.DM00086774.pdf
STF18N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1.5KE400CARL cd00000663.pdf
Hersteller: STMicroelectronics
Category: Diodes - Unclassified
Description: 1.5KE400CARL
auf Bestellung 1900 Stücke:
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1900+0.56 EUR
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1N5818 1N5819RL.pdf
1N5818
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
407+0.21 EUR
463+0.18 EUR
544+0.15 EUR
642+0.13 EUR
715+0.12 EUR
747+0.11 EUR
1000+0.11 EUR
2000+0.098 EUR
Mindestbestellmenge: 239 Stücke
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LD3985M28R ld3985.pdf
LD3985M28R
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
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BZW50-27RL cd00000695.pdf
Hersteller: STMicroelectronics
Category: Diodes - Unclassified
Description: BZW50-27RL
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+1.39 EUR
Mindestbestellmenge: 1000 Stücke
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STW9NK90Z STF9NK90Z.pdf
STW9NK90Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
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17+5.24 EUR
24+3.61 EUR
25+3.47 EUR
30+3.4 EUR
90+3.03 EUR
120+2.92 EUR
150+2.82 EUR
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STB6N60M2 en.DM00087513.pdf
STB6N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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STD6N60DM2 std6n60dm2.pdf
STD6N60DM2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STM32F427ZIT7 en.DM00071990.pdf
STM32F427ZIT7
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Supply voltage: 1.8...3.6V DC
Operating temperature: -40...105°C
Number of inputs/outputs: 114
Type of integrated circuit: STM32 ARM microcontroller
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M4
Clock frequency: 180MHz
Kind of core: 32-bit
Memory: 256kB SRAM; 2MB FLASH
Number of 12bit D/A converters: 2
Kind of package: in-tray
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Case: LQFP144
Family: STM32F4
Mounting: SMD
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
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5+20.79 EUR
10+17.39 EUR
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SM6T36A SM6T.pdf
SM6T36A
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Tolerance: ±5%
Breakdown voltage: 36V
auf Bestellung 9488 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
379+0.23 EUR
432+0.2 EUR
550+0.15 EUR
582+0.14 EUR
1000+0.13 EUR
2500+0.12 EUR
5000+0.12 EUR
Mindestbestellmenge: 295 Stücke
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Z0107MA 2AL2 en.CD00002268.pdf
Z0107MA 2AL2
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Mounting: THT
Max. forward impulse current: 8A
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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STPS5L40 en.CD00002923.pdf
STPS5L40
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
435+0.19 EUR
575+0.14 EUR
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Z0405MH en.DM00908043.pdf
Z0405MH
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
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139+0.61 EUR
188+0.45 EUR
235+0.36 EUR
270+0.32 EUR
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SM15T30A SM15T.pdf
SM15T30A
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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81+1.06 EUR
94+0.92 EUR
125+0.68 EUR
137+0.62 EUR
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SM15T30CA SM15T.pdf
SM15T30CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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143+0.6 EUR
159+0.54 EUR
172+0.5 EUR
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VNS3NV04PTR-E en.CD00232418.pdf
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
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SMCJ33CA-TR SMCJ33CA-TR.pdf
SMCJ33CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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77+1.11 EUR
103+0.83 EUR
139+0.61 EUR
156+0.55 EUR
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STL120N10F8 en.DM00852148.pdf
STL120N10F8
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
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VL53L3CXV0DH/1 vl53l3cx.pdf
Hersteller: STMicroelectronics
Category: Unclassified
Description: VL53L3CXV0DH/1
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STF20N65M5 en.DM00076416.pdf
STF20N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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MJD45H11T4 MJD44H11_MJD45H11.pdf
MJD45H11T4
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
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STP110N10F7 en.DM00072347.pdf
STP110N10F7
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ F7
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BTB04-600SL description BTB04-600SL-STMicroelectronics.pdf
BTB04-600SL
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: lighting application
auf Bestellung 376 Stücke:
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50+1.74 EUR
71+1.21 EUR
82+1.05 EUR
111+0.77 EUR
124+0.69 EUR
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STP16N65M2 en.DM00140964.pdf
STP16N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 19.5nC
Produkt ist nicht verfügbar
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STD16N65M2 en.DM00140850.pdf
STD16N65M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STH315N10F7-2 sth315n10f7-2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Produkt ist nicht verfügbar
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STH315N10F7-6 sth315n10f7-2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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STP200N3LL en.DM00255610.pdf
STP200N3LL
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
On-state resistance: 2.4mΩ
Mounting: THT
Pulsed drain current: 480A
Power dissipation: 176.5W
Gate charge: 53nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
auf Bestellung 153 Stücke:
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LM833DT LM833DT.pdf
LM833DT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
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MC1458IDT MC1458ID.pdf
MC1458IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: -40...105°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
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139+0.61 EUR
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MC1458DT mc1458.pdf
MC1458DT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Mounting: SMT
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Type of integrated circuit: operational amplifier
Operating temperature: 0...70°C
Input bias current: 0.8µA
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Quiescent current: 2.3mA
Kind of package: reel; tape
Input offset current: 300nA
Case: SO8
Number of channels: 2
Bandwidth: 1MHz
auf Bestellung 5467 Stücke:
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150+0.57 EUR
174+0.49 EUR
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221+0.38 EUR
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LD39150PT-R ld39150.pdf
LD39150PT-R
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
auf Bestellung 2444 Stücke:
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LD39150PU-R ld39150.pdf
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STF4N80K5 en.DM00092669.pdf
STF4N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 62 Stücke:
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38+2.28 EUR
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