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T410-800T T410-800T STMicroelectronics en.CD00002383.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
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STWD100NXWY3F STWD100NXWY3F STMicroelectronics stwd100.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
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STWD100YNXWY3F STWD100YNXWY3F STMicroelectronics stwd100.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
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BUL49D BUL49D STMicroelectronics BUL49D.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Current gain: 4...60
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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STN851 STN851 STMicroelectronics stn851.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 30...350
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2STN1550 2STN1550 STMicroelectronics 2stn1550.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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L6920D L6920D STMicroelectronics L6920D-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 0.6...5.5V DC
Output voltage: 2...5.2V DC
Output current: 1A
Case: TSSOP8
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: max. 150°C
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STTH2003CG STTH2003CG STMicroelectronics STTH2003CG.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 30A
Max. forward impulse current: 110A
Kind of package: tube
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FERD40M45CT FERD40M45CT STMicroelectronics FERD40M45C.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 275A
Case: TO220AB
Max. forward voltage: 0.34V
Max. load current: 40A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 0.5µs
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TS472IQT TS472IQT STMicroelectronics ts472.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
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TS472EIJT STMicroelectronics ts472.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
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TSC2010HYDT TSC2010HYDT STMicroelectronics tsc2010h.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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TSC2010IDT TSC2010IDT STMicroelectronics tsc2010.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
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TSC2012HYDT TSC2012HYDT STMicroelectronics tsc2012h.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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TSC2010IYDT TSC2010IYDT STMicroelectronics tsc2010.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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TSC2011HYDT TSC2011HYDT STMicroelectronics tsc2011h.pdf Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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STF8N80K5 STF8N80K5 STMicroelectronics en.DM00080811.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
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STF8NK100Z STF8NK100Z STMicroelectronics STF8NK100Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
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STF80N900K6 STF80N900K6 STMicroelectronics stf80n900k6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
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STF80N240K6 STMicroelectronics stf80n240k6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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STTH15R06FP STTH15R06FP STMicroelectronics en.CD00002495.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 15A
Max. load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: TO220FPAC
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 150A
Max. forward voltage: 2.9V
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STF21N65M5 STF21N65M5 STMicroelectronics STF21N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP21N65M5 STP21N65M5 STMicroelectronics stp21n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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STL21N65M5 STMicroelectronics en.CD00272115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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1.5KE6V8CA 1.5KE6V8CA STMicroelectronics 1.5KE100A.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: Ammo Pack
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STF12N50DM2 STF12N50DM2 STMicroelectronics en.DM00130088.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 16nC
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STF12N50M2 STF12N50M2 STMicroelectronics en.DM00121824.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Pulsed drain current: 40A
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STEVAL-ISA193V2 STMicroelectronics STEVAL-ISA193V2.pdf Category: STM development kits
Description: Dev.kit: adapter; Comp: STCH02; 5V; 3A; 15W; 90÷264VAC; 44x35x15mm
Dimensions: 44x35x15mm
Power: 15W
Connection: USB
Output voltage: 5V
Additional functions: AC/DC converter
Operating voltage: 90...264V AC
Type of development kit: adapter
Components: STCH02
Output current: 3A
Kit contents: prototype board
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VIPER222XSTR STMicroelectronics viper222.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; flyback; Uin: 4.5÷30V; Usup: 30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 30kHz
Supply voltage: 30V
Input voltage: 4.5...30V
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VIPER222LSTR STMicroelectronics viper222.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; flyback; 4.5÷30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 4.5...30V
Produkt ist nicht verfügbar
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STM32F100VDT6 STM32F100VDT6 STMicroelectronics en.CD00212417.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
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STM32F100VDT6BTR STM32F100VDT6BTR STMicroelectronics en.CD00212417.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: reel; tape
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
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STM32F100VDT7B STM32F100VDT7B STMicroelectronics en.CD00212417.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; STM32F1
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
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STCS1APHR STCS1APHR STMicroelectronics en.CD00185793.pdf Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: PowerSO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: automotive industry
Input voltage: 4.5...40V
Integrated circuit features: PWM
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LD29080DT33R LD29080DT33R STMicroelectronics ld29080.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Manufacturer series: LD29080
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.3...8.8V
Produkt ist nicht verfügbar
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STN83003 STN83003 STMicroelectronics STN83003.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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STPS3L60UY STPS3L60UY STMicroelectronics stps3l60u-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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STPS3L60UFN STMicroelectronics stps3l60.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 30mA
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STPS3L60UF STMicroelectronics en.CD00002286.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 30mA
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STL56N3LLH5 STL56N3LLH5 STMicroelectronics en.CD00297242.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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STPS20L15D STPS20L15D STMicroelectronics stps20l15.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.28V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.28V
Max. load current: 30A
Max. forward impulse current: 310A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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STPS20L15G-TR STPS20L15G-TR STMicroelectronics en.CD00001327.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 15V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.52V
Max. load current: 30A
Max. forward impulse current: 310A
Leakage current: 500mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STP13N65M2 STP13N65M2 STMicroelectronics en.DM00133031.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO220-3
On-state resistance: 0.43Ω
Pulsed drain current: 40A
Power dissipation: 110W
Gate charge: 17nC
Polarisation: unipolar
Technology: MDmesh™ M2
Drain current: 6.3A
Kind of channel: enhancement
Drain-source voltage: 650V
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P0102MN 5AA4 P0102MN 5AA4 STMicroelectronics P0102MN.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; SOT223; SMD; Ifsm: 8A
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. load current: 0.8A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
Mounting: SMD
Max. forward impulse current: 8A
Gate current: 0.2mA
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STF3NK80Z STF3NK80Z STMicroelectronics STF3NK80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP3NK80Z STP3NK80Z STMicroelectronics STF3NK80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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M48T18-100PC1 M48T18-100PC1 STMicroelectronics m48t18.pdf Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.5÷5.5V
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 64kb SRAM
Mounting: THT
Case: PCDIP28
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 4.5...5.5V
Time keeping current: 3mA
Memory organisation: 8kx8bit
Access time: 100ns
Trade name: TIMEKEEPER®
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M48T08-100PC1 M48T08-100PC1 STMicroelectronics m48t18.pdf Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.75÷5.5V
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 64kb SRAM
Mounting: THT
Case: PCDIP28
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 4.75...5.5V
Time keeping current: 3mA
Memory organisation: 8kx8bit
Access time: 100ns
Battery/ rechargeable battery: battery Li(CF) BR1225 2,8V x1
Trade name: TIMEKEEPER®
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SMTPA100 SMTPA100 STMicroelectronics cd00046584.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 90V
Breakover voltage: 100...133V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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SMTPA120 SMTPA120 STMicroelectronics cd00046584.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 108V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 108V
Breakover voltage: 120...160V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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SMTPA130 SMTPA130 STMicroelectronics cd00046584.pdf Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 117V; SMB; SMD; 50A; bidirectional; Trisil™
Type of thyristor: TSS
Mounting: SMD
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 117V
Breakover voltage: 130...173V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
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SMTPA180 SMTPA180 STMicroelectronics cd00046584.pdf description Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 162V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 162V
Breakover voltage: 180...240V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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LD29080DT50R LD29080DT50R STMicroelectronics ld29080.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 5V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Manufacturer series: LD29080
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13V
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STPS60SM200CW STPS60SM200CW STMicroelectronics stps60sm200c.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.64V
Max. forward impulse current: 0.5kA
Kind of package: tube
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STTH6002CPI STTH6002CPI STMicroelectronics stth6002c.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; Ifsm: 330A; TOP3I; tube; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TOP3I
Kind of package: tube
Max. forward voltage: 0.75V
Reverse recovery time: 22ns
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STTH6006TV1 STMicroelectronics en.CD00110834.pdf description Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; ISOTOP; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 210A
Case: ISOTOP
Max. forward voltage: 1.1V
Max. load current: 60A
Reverse recovery time: 50ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: diode
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STP36NF06L STP36NF06L STMicroelectronics STP36NF06L.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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SM6T150CA SM6T150CA STMicroelectronics SM6T150CA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T150A SM6T150A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
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TDE1897RFPT TDE1897RFPT STMicroelectronics en.CD00000021.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; SMD; SO20; reel,tape
Type of integrated circuit: power switch
Number of channels: 1
Case: SO20
Supply voltage: 18...35V
Mounting: SMD
Output current: 0.5A
Operating temperature: -25...85°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
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T410-800T en.CD00002383.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
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STWD100NXWY3F stwd100.pdf
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
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STWD100YNXWY3F stwd100.pdf
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
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BUL49D BUL49D.pdf
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Current gain: 4...60
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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STN851 stn851.pdf
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 30...350
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2STN1550 2stn1550.pdf
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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L6920D L6920D-DTE.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 0.6...5.5V DC
Output voltage: 2...5.2V DC
Output current: 1A
Case: TSSOP8
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: max. 150°C
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STTH2003CG STTH2003CG.pdf
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1V
Max. load current: 30A
Max. forward impulse current: 110A
Kind of package: tube
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FERD40M45CT FERD40M45C.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 275A
Case: TO220AB
Max. forward voltage: 0.34V
Max. load current: 40A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 0.5µs
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TS472IQT ts472.pdf
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
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TS472EIJT ts472.pdf
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
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TSC2010HYDT tsc2010h.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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TSC2010IDT tsc2010.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
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TSC2012HYDT tsc2012h.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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TSC2010IYDT tsc2010.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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TSC2011HYDT tsc2011h.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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STF8N80K5 en.DM00080811.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
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STF8NK100Z STF8NK100Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
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STF80N900K6 stf80n900k6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
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STF80N240K6 stf80n240k6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Produkt ist nicht verfügbar
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STTH15R06FP en.CD00002495.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Load current: 15A
Max. load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: TO220FPAC
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 150A
Max. forward voltage: 2.9V
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STF21N65M5 STF21N65M5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP21N65M5 stp21n65m5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STL21N65M5 en.CD00272115.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1.5KE6V8CA 1.5KE100A.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: Ammo Pack
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STF12N50DM2 en.DM00130088.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 44A
Gate charge: 16nC
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STF12N50M2 en.DM00121824.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Pulsed drain current: 40A
Produkt ist nicht verfügbar
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STEVAL-ISA193V2 STEVAL-ISA193V2.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: adapter; Comp: STCH02; 5V; 3A; 15W; 90÷264VAC; 44x35x15mm
Dimensions: 44x35x15mm
Power: 15W
Connection: USB
Output voltage: 5V
Additional functions: AC/DC converter
Operating voltage: 90...264V AC
Type of development kit: adapter
Components: STCH02
Output current: 3A
Kit contents: prototype board
Produkt ist nicht verfügbar
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VIPER222XSTR viper222.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; flyback; Uin: 4.5÷30V; Usup: 30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 30kHz
Supply voltage: 30V
Input voltage: 4.5...30V
Produkt ist nicht verfügbar
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VIPER222LSTR viper222.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; flyback; 4.5÷30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 4.5...30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STM32F100VDT6 en.CD00212417.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Produkt ist nicht verfügbar
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STM32F100VDT6BTR en.CD00212417.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: reel; tape
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Produkt ist nicht verfügbar
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STM32F100VDT7B en.CD00212417.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; STM32F1
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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STCS1APHR en.CD00185793.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: PowerSO8
Output current: 1.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: automotive industry
Input voltage: 4.5...40V
Integrated circuit features: PWM
auf Bestellung 2255 Stücke:
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LD29080DT33R ld29080.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Manufacturer series: LD29080
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.3...8.8V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STN83003 STN83003.pdf
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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STPS3L60UY stps3l60u-y.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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STPS3L60UFN stps3l60.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 30mA
Produkt ist nicht verfügbar
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STPS3L60UF en.CD00002286.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 30mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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STL56N3LLH5 en.CD00297242.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1994 Stücke:
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STPS20L15D description stps20l15.pdf
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.28V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.28V
Max. load current: 30A
Max. forward impulse current: 310A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Produkt ist nicht verfügbar
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STPS20L15G-TR en.CD00001327.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 15V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.52V
Max. load current: 30A
Max. forward impulse current: 310A
Leakage current: 500mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STP13N65M2 en.DM00133031.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO220-3
On-state resistance: 0.43Ω
Pulsed drain current: 40A
Power dissipation: 110W
Gate charge: 17nC
Polarisation: unipolar
Technology: MDmesh™ M2
Drain current: 6.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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P0102MN 5AA4 P0102MN.pdf
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; SOT223; SMD; Ifsm: 8A
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. load current: 0.8A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
Mounting: SMD
Max. forward impulse current: 8A
Gate current: 0.2mA
Produkt ist nicht verfügbar
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STF3NK80Z STF3NK80Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP3NK80Z STF3NK80Z.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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M48T18-100PC1 m48t18.pdf
Hersteller: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.5÷5.5V
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 64kb SRAM
Mounting: THT
Case: PCDIP28
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 4.5...5.5V
Time keeping current: 3mA
Memory organisation: 8kx8bit
Access time: 100ns
Trade name: TIMEKEEPER®
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M48T08-100PC1 m48t18.pdf
Hersteller: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.75÷5.5V
Type of integrated circuit: RTC circuit
Interface: parallel
Kind of memory: NV SRAM
Memory: 64kb SRAM
Mounting: THT
Case: PCDIP28
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Operating voltage: 4.75...5.5V
Time keeping current: 3mA
Memory organisation: 8kx8bit
Access time: 100ns
Battery/ rechargeable battery: battery Li(CF) BR1225 2,8V x1
Trade name: TIMEKEEPER®
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SMTPA100 cd00046584.pdf
Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 90V
Breakover voltage: 100...133V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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SMTPA120 cd00046584.pdf
Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 108V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 108V
Breakover voltage: 120...160V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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SMTPA130 cd00046584.pdf
Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 117V; SMB; SMD; 50A; bidirectional; Trisil™
Type of thyristor: TSS
Mounting: SMD
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 117V
Breakover voltage: 130...173V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Produkt ist nicht verfügbar
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SMTPA180 description cd00046584.pdf
Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 162V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 162V
Breakover voltage: 180...240V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
Produkt ist nicht verfügbar
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LD29080DT50R ld29080.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 5V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Manufacturer series: LD29080
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13V
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STPS60SM200CW stps60sm200c.pdf
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.64V
Max. forward impulse current: 0.5kA
Kind of package: tube
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STTH6002CPI stth6002c.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; Ifsm: 330A; TOP3I; tube; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TOP3I
Kind of package: tube
Max. forward voltage: 0.75V
Reverse recovery time: 22ns
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STTH6006TV1 description en.CD00110834.pdf
Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; ISOTOP; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 210A
Case: ISOTOP
Max. forward voltage: 1.1V
Max. load current: 60A
Reverse recovery time: 50ns
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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STP36NF06L description STP36NF06L.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 730 Stücke:
Lieferzeit 14-21 Tag (e)
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SM6T150CA SM6T150CA.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
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SM6T150A SM6T.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
auf Bestellung 2813 Stücke:
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TDE1897RFPT en.CD00000021.pdf
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; SMD; SO20; reel,tape
Type of integrated circuit: power switch
Number of channels: 1
Case: SO20
Supply voltage: 18...35V
Mounting: SMD
Output current: 0.5A
Operating temperature: -25...85°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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