Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (132633) > Seite 2179 nach 2211
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| ST25DV16KC-IE6T3 | STMicroelectronics |
 Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C; TSSOP8 Type of integrated circuit: EEPROM memory Mounting: SMD Operating temperature: -40...85°C Case: TSSOP8 Interface: I2C |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| ST25DV64KC-JF6D3 | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C Type of integrated circuit: EEPROM memory Interface: I2C Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 557 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 557 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| STGAP2SICS | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; Ch: 1; 1MHz Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: -4...4A Number of channels: 1 Supply voltage: 3.1...5.5V Mounting: SMD Operating temperature: -40...125°C Frequency: 1MHz Integrated circuit features: galvanically isolated |
Produkt ist nicht verfügbar |
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SCT10N120 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W Case: HIP247™ Mounting: THT Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...25V Kind of package: tube On-state resistance: 690mΩ Pulsed drain current: 24A Power dissipation: 150W Gate charge: 22nC Polarisation: unipolar Technology: SiC Drain current: 12A Kind of channel: enhancement |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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| STEVAL-ISA172V2 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; Comp: STM32F334; 45÷66Hz; 48÷52V; 2kW Type of development kit: evaluation Components: STM32F334 Connection: screw Kit contents: prototype board Power: 2kW Output voltage: 48...52V Additional functions: AC/DC converter; PFC Frequency: 45...66Hz Operating voltage: 90...264V AC |
Produkt ist nicht verfügbar |
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| STEVAL-IPFC01V1 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; Comp: STNRGPF01; 111kHz; Ch: 3; 3kW; 90÷265VAC Type of development kit: evaluation Connection: screw Frequency: 111kHz Power: 3kW Operating voltage: 90...265V AC Kit contents: adapter; base board Additional functions: active PFC Number of channels: 3 Components: STNRGPF01 |
Produkt ist nicht verfügbar |
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| STEVAL-IPFC12V1 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; Comp: STNRGPF12; 60kHz; Ch: 2; 2kW; 90÷265VAC Power: 2kW Connection: screw Frequency: 60kHz Additional functions: active PFC Number of channels: 2 Operating voltage: 90...265V AC Type of development kit: evaluation Components: STNRGPF12 Kit contents: adapter; base board |
Produkt ist nicht verfügbar |
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| STEVAL-ISA174V1 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; 60kHz; -5÷7V; 400÷840mA; 7W; 85÷265VAC Type of development kit: evaluation Connection: screw Frequency: 60kHz Output voltage: -5...7V Output current: 400...840mA Power: 7W Operating voltage: 85...265V AC Topology: flyback Dimensions: 69.6x28mm Kit contents: prototype board Additional functions: AC/DC converter; PFC |
Produkt ist nicht verfügbar |
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MJD32CT4-A | STMicroelectronics |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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LD39200PU33R | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2% Mounting: SMD Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: LD39200 Input voltage: 1.25...6V Output current: 2A Type of integrated circuit: voltage regulator Voltage drop: 0.25V Operating temperature: -40...125°C Output voltage: 3.3V Kind of package: reel; tape Case: DFN8 Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| LD39200PUR | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN6 Mounting: SMD Tolerance: ±2% Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: LD39200 Input voltage: 1.25...6V Output current: 2A Type of integrated circuit: voltage regulator Voltage drop: 0.25V Operating temperature: -40...125°C Output voltage: 0.5...5.75V Kind of package: reel; tape Case: DFN6 Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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STB80NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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STB80NF55-06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 300W Case: D2PAK; TO263 On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 189nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MD1803DFX | STMicroelectronics |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 700V; 10A; 57W Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 700V Collector current: 10A Power dissipation: 57W Mounting: THT |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMCJ24CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TL431ICT | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±2.21%; SOT323-6L; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.21% Mounting: SMD Case: SOT323-6L Operating temperature: -40...105°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TL431IL3T | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±2%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: SMD Case: SOT23 Operating temperature: -40...105°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TL431IL5T | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±2%; SOT23-5; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: SMD Case: SOT23-5 Operating temperature: -40...105°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TL431IYDT | STMicroelectronics |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| VIPER113XSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback Supply voltage: 4.5...30V Topology: boost; buck; buck-boost; flyback Mounting: SMD Input voltage: 4.5...30V Type of integrated circuit: PMIC Case: SSOP10 Frequency: 30kHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VIPER114HSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; 120kHz; boost,buck,buck-boost,flyback; 4.5÷30V Topology: boost; buck; buck-boost; flyback Mounting: SMD Input voltage: 4.5...30V Type of integrated circuit: PMIC Operating temperature: -40...125°C Frequency: 120kHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| VIPER115HSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; 120kHz; SSOP10; boost,buck,buck-boost,flyback; 4.5÷30V Topology: boost; buck; buck-boost; flyback Mounting: SMD Input voltage: 4.5...30V Type of integrated circuit: PMIC Operating temperature: -40...150°C Case: SSOP10 Frequency: 120kHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| STEVAL-ILL080V1 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; Comp: HVLED001A,STF10LN80K5; 45÷66Hz; 75÷93V Kind of integrated circuit: LED driver Frequency: 45...66Hz Power: 18W Connection: screw Output voltage: 75...93V Programmers and development kits features: flyback controller Type of development kit: evaluation Components: HVLED001A; STF10LN80K5 Output current: 0.2A Kit contents: base board |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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P6KE47CA | STMicroelectronics |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 47V; 9.3A; bidirectional; ±5%; DO15; Ammo Pack; 600W Type of diode: TVS Max. off-state voltage: 40V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Peak pulse power dissipation: 0.6kW Tolerance: ±5% |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STM32H523RCT7TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 250MHz; LQFP64; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 250MHz Mounting: SMD Number of inputs/outputs: 49 Case: LQFP64 Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M33 Operating temperature: -40...105°C Kind of core: 32-bit |
auf Bestellung 23000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SM6T39AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 897 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| L2293Q | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4 Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: motor controller Case: VFQFPN32 Output current: 0.6A Number of channels: 4 Mounting: SMD Application: DC motors Kind of package: tube Supply voltage: 2.8...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| L2293QTR | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4 Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: motor controller Case: VFQFPN32 Output current: 0.6A Number of channels: 4 Mounting: SMD Application: DC motors Kind of package: reel; tape Supply voltage: 2.8...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| E-TDA7384A | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Pout: 46W; stereo; 8÷18VDC; Ch: 4; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 46W Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 4Ω Kind of package: tube Integrated circuit features: stereo |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 17 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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STGWT60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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STGWA40H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 45A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 160A Mounting: THT Gate charge: 153nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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STGB30H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STGW40H65DFB-4 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STGB20H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STGH30H65DFB-2AG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: H2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STGP30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA20H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA40H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA50H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STGWA100H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP2N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W Case: TO220-3 Mounting: THT Kind of package: tube Pulsed drain current: 8A Power dissipation: 42W Gate charge: 5nC Polarisation: unipolar Technology: MDmesh™ K5 Drain current: 1.3A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STL2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W Case: PowerFLAT 5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 6A Power dissipation: 33W Gate charge: 5nC Polarisation: unipolar Drain current: 1.5A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STD2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Version: ESD Technology: SuperMesh™ Drain current: 1.3A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LD39100PU18RY | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 1.8V Output current: 1A Case: DFN6 Mounting: SMD Manufacturer series: LD39100 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.5...5.5V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TSH24IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV Type of integrated circuit: operational amplifier Bandwidth: 25MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...30V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 15V/μs Integrated circuit features: high speed Input offset voltage: 3.5mV Kind of package: reel; tape Input bias current: 0.65µA Input offset current: 65nA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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L9663 | STMicroelectronics |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube Type of integrated circuit: interface Mounting: SMD Case: TQFP32 Kind of package: tube Interface: PSI5; SPI Kind of integrated circuit: transceiver Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
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TSU102IST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV Type of integrated circuit: operational amplifier Bandwidth: 9kHz Number of channels: 2 Mounting: SMT Case: MSOP8 Operating temperature: -40...85°C Input offset voltage: 3.4mV Slew rate: 3mV/μs Integrated circuit features: nanopower; rail-to-rail Input bias current: 30pA Voltage supply range: 1.5...5.5V DC Quiescent current: 950nA Kind of package: reel; tape Input offset current: 30pA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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P0111MA 1AA3 | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT Type of thyristor: standard Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 25µA Case: TO92 Mounting: THT Max. forward impulse current: 8A Kind of package: bulk |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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| STM6315SDW13F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1...5.5V DC Case: SOT143-4 Operating temperature: -40...125°C Mounting: SMD Threshold on-voltage: 2.63V Number of channels: 1 |
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TYN1212RG | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube Max. off-state voltage: 1.2kV Case: TO220AB Mounting: THT Max. load current: 12A Max. forward impulse current: 120A Kind of package: tube Gate current: 15mA Type of thyristor: thyristor |
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TN4050-12PI | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT Mounting: THT Max. forward impulse current: 0.4kA Gate current: 50mA Max. off-state voltage: 1.2kV Load current: 25A Max. load current: 40A Kind of package: tube Case: TOP3I Type of thyristor: standard |
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TN5050H-12WY | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube Max. off-state voltage: 1.2kV Load current: 32A Case: TO247 Mounting: THT Max. load current: 50A Max. forward impulse current: 0.4kA Kind of package: tube Features of semiconductor devices: high temperature Application: automotive industry Gate current: 50mA Type of thyristor: thyristor |
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| TSC2010IST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: miniSO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Kind of integrated circuit: current sense |
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| TSC2010IYST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: miniSO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
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STP8NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
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STW30N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 88A Power dissipation: 140W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
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ISO8200B | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 8 Mounting: SMD Case: PowerSO36 On-state resistance: 0.11Ω Kind of package: tube Supply voltage: 10.5...36V DC supply current: 9mA Interface: SPI |
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ISO8200BQ | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 8 Mounting: SMD Case: TFQFPN32 On-state resistance: 0.11Ω Kind of package: tube Supply voltage: 10.5...36V Integrated circuit features: galvanically isolated DC supply current: 9mA Interface: SPI |
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| ST25DV16KC-IE6T3 |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; TSSOP8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP8
Interface: I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; TSSOP8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP8
Interface: I2C
auf Bestellung 48000 Stücke:
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| ST25DV64KC-JF6D3 |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)
| STGAP2SICS |
|
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; Ch: 1; 1MHz
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...5.5V
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 1MHz
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; Ch: 1; 1MHz
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...5.5V
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 1MHz
Integrated circuit features: galvanically isolated
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| SCT10N120 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W
Case: HIP247™
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
Kind of package: tube
On-state resistance: 690mΩ
Pulsed drain current: 24A
Power dissipation: 150W
Gate charge: 22nC
Polarisation: unipolar
Technology: SiC
Drain current: 12A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W
Case: HIP247™
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...25V
Kind of package: tube
On-state resistance: 690mΩ
Pulsed drain current: 24A
Power dissipation: 150W
Gate charge: 22nC
Polarisation: unipolar
Technology: SiC
Drain current: 12A
Kind of channel: enhancement
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| STEVAL-ISA172V2 |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STM32F334; 45÷66Hz; 48÷52V; 2kW
Type of development kit: evaluation
Components: STM32F334
Connection: screw
Kit contents: prototype board
Power: 2kW
Output voltage: 48...52V
Additional functions: AC/DC converter; PFC
Frequency: 45...66Hz
Operating voltage: 90...264V AC
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STM32F334; 45÷66Hz; 48÷52V; 2kW
Type of development kit: evaluation
Components: STM32F334
Connection: screw
Kit contents: prototype board
Power: 2kW
Output voltage: 48...52V
Additional functions: AC/DC converter; PFC
Frequency: 45...66Hz
Operating voltage: 90...264V AC
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| STEVAL-IPFC01V1 |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STNRGPF01; 111kHz; Ch: 3; 3kW; 90÷265VAC
Type of development kit: evaluation
Connection: screw
Frequency: 111kHz
Power: 3kW
Operating voltage: 90...265V AC
Kit contents: adapter; base board
Additional functions: active PFC
Number of channels: 3
Components: STNRGPF01
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STNRGPF01; 111kHz; Ch: 3; 3kW; 90÷265VAC
Type of development kit: evaluation
Connection: screw
Frequency: 111kHz
Power: 3kW
Operating voltage: 90...265V AC
Kit contents: adapter; base board
Additional functions: active PFC
Number of channels: 3
Components: STNRGPF01
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| STEVAL-IPFC12V1 |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STNRGPF12; 60kHz; Ch: 2; 2kW; 90÷265VAC
Power: 2kW
Connection: screw
Frequency: 60kHz
Additional functions: active PFC
Number of channels: 2
Operating voltage: 90...265V AC
Type of development kit: evaluation
Components: STNRGPF12
Kit contents: adapter; base board
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STNRGPF12; 60kHz; Ch: 2; 2kW; 90÷265VAC
Power: 2kW
Connection: screw
Frequency: 60kHz
Additional functions: active PFC
Number of channels: 2
Operating voltage: 90...265V AC
Type of development kit: evaluation
Components: STNRGPF12
Kit contents: adapter; base board
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| STEVAL-ISA174V1 |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; 60kHz; -5÷7V; 400÷840mA; 7W; 85÷265VAC
Type of development kit: evaluation
Connection: screw
Frequency: 60kHz
Output voltage: -5...7V
Output current: 400...840mA
Power: 7W
Operating voltage: 85...265V AC
Topology: flyback
Dimensions: 69.6x28mm
Kit contents: prototype board
Additional functions: AC/DC converter; PFC
Category: STM development kits
Description: Dev.kit: evaluation; 60kHz; -5÷7V; 400÷840mA; 7W; 85÷265VAC
Type of development kit: evaluation
Connection: screw
Frequency: 60kHz
Output voltage: -5...7V
Output current: 400...840mA
Power: 7W
Operating voltage: 85...265V AC
Topology: flyback
Dimensions: 69.6x28mm
Kit contents: prototype board
Additional functions: AC/DC converter; PFC
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| MJD32CT4-A |
|
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| LD39200PU33R |
|
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Mounting: SMD
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LD39200
Input voltage: 1.25...6V
Output current: 2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...125°C
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN8
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Mounting: SMD
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LD39200
Input voltage: 1.25...6V
Output current: 2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...125°C
Output voltage: 3.3V
Kind of package: reel; tape
Case: DFN8
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| LD39200PUR |
|
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN6
Mounting: SMD
Tolerance: ±2%
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: LD39200
Input voltage: 1.25...6V
Output current: 2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...125°C
Output voltage: 0.5...5.75V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷5.75V; 2A; DFN6
Mounting: SMD
Tolerance: ±2%
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: LD39200
Input voltage: 1.25...6V
Output current: 2A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...125°C
Output voltage: 0.5...5.75V
Kind of package: reel; tape
Case: DFN6
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| STB80NF10T4 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
| STB80NF55-06T4 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 189nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 189nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MD1803DFX |
|
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 10A; 57W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 700V
Collector current: 10A
Power dissipation: 57W
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 10A; 57W
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 700V
Collector current: 10A
Power dissipation: 57W
Mounting: THT
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| SMCJ24CA-TR |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| TL431ICT |
|
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.21%; SOT323-6L; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.21%
Mounting: SMD
Case: SOT323-6L
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.21%; SOT323-6L; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.21%
Mounting: SMD
Case: SOT323-6L
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| TL431IL3T |
|
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| TL431IL5T |
|
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-5; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-5; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| TL431IYDT |
|
Hersteller: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Application: automotive industry
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| VIPER113XSTR |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback
Supply voltage: 4.5...30V
Topology: boost; buck; buck-boost; flyback
Mounting: SMD
Input voltage: 4.5...30V
Type of integrated circuit: PMIC
Case: SSOP10
Frequency: 30kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback
Supply voltage: 4.5...30V
Topology: boost; buck; buck-boost; flyback
Mounting: SMD
Input voltage: 4.5...30V
Type of integrated circuit: PMIC
Case: SSOP10
Frequency: 30kHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| VIPER114HSTR |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 120kHz; boost,buck,buck-boost,flyback; 4.5÷30V
Topology: boost; buck; buck-boost; flyback
Mounting: SMD
Input voltage: 4.5...30V
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Frequency: 120kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 120kHz; boost,buck,buck-boost,flyback; 4.5÷30V
Topology: boost; buck; buck-boost; flyback
Mounting: SMD
Input voltage: 4.5...30V
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Frequency: 120kHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| VIPER115HSTR |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 120kHz; SSOP10; boost,buck,buck-boost,flyback; 4.5÷30V
Topology: boost; buck; buck-boost; flyback
Mounting: SMD
Input voltage: 4.5...30V
Type of integrated circuit: PMIC
Operating temperature: -40...150°C
Case: SSOP10
Frequency: 120kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 120kHz; SSOP10; boost,buck,buck-boost,flyback; 4.5÷30V
Topology: boost; buck; buck-boost; flyback
Mounting: SMD
Input voltage: 4.5...30V
Type of integrated circuit: PMIC
Operating temperature: -40...150°C
Case: SSOP10
Frequency: 120kHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| STEVAL-ILL080V1 |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: HVLED001A,STF10LN80K5; 45÷66Hz; 75÷93V
Kind of integrated circuit: LED driver
Frequency: 45...66Hz
Power: 18W
Connection: screw
Output voltage: 75...93V
Programmers and development kits features: flyback controller
Type of development kit: evaluation
Components: HVLED001A; STF10LN80K5
Output current: 0.2A
Kit contents: base board
Category: STM development kits
Description: Dev.kit: evaluation; Comp: HVLED001A,STF10LN80K5; 45÷66Hz; 75÷93V
Kind of integrated circuit: LED driver
Frequency: 45...66Hz
Power: 18W
Connection: screw
Output voltage: 75...93V
Programmers and development kits features: flyback controller
Type of development kit: evaluation
Components: HVLED001A; STF10LN80K5
Output current: 0.2A
Kit contents: base board
Produkt ist nicht verfügbar
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| P6KE47CA |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47V; 9.3A; bidirectional; ±5%; DO15; Ammo Pack; 600W
Type of diode: TVS
Max. off-state voltage: 40V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47V; 9.3A; bidirectional; ±5%; DO15; Ammo Pack; 600W
Type of diode: TVS
Max. off-state voltage: 40V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Produkt ist nicht verfügbar
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| STM32H523RCT7TR |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 250MHz; LQFP64; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 250MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Operating temperature: -40...105°C
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 250MHz; LQFP64; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 250MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Operating temperature: -40...105°C
Kind of core: 32-bit
auf Bestellung 23000 Stücke:
Lieferzeit 14-21 Tag (e)
| SM6T39AY |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
| L2293Q |
|
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: motor controller
Case: VFQFPN32
Output current: 0.6A
Number of channels: 4
Mounting: SMD
Application: DC motors
Kind of package: tube
Supply voltage: 2.8...36V
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: motor controller
Case: VFQFPN32
Output current: 0.6A
Number of channels: 4
Mounting: SMD
Application: DC motors
Kind of package: tube
Supply voltage: 2.8...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| L2293QTR |
|
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: motor controller
Case: VFQFPN32
Output current: 0.6A
Number of channels: 4
Mounting: SMD
Application: DC motors
Kind of package: reel; tape
Supply voltage: 2.8...36V
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; VFQFPN32; 0.6A; Ch: 4
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: motor controller
Case: VFQFPN32
Output current: 0.6A
Number of channels: 4
Mounting: SMD
Application: DC motors
Kind of package: reel; tape
Supply voltage: 2.8...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| E-TDA7384A |
|
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 46W; stereo; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 46W
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 4Ω
Kind of package: tube
Integrated circuit features: stereo
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 46W; stereo; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 46W
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 4Ω
Kind of package: tube
Integrated circuit features: stereo
Produkt ist nicht verfügbar
Mindestbestellmenge: 17 Stücke
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| STGWT60H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
| STGWA40H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 230W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 45A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| STGB30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGW40H65DFB-4 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGB20H65DFB2 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGH30H65DFB-2AG |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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| STGP30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGWA60H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGWA20H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGWA30H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGWA40H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STGWA50H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGWA100H65DFB2 |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Produkt ist nicht verfügbar
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| STP2N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
| STL2N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 6A
Power dissipation: 33W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 6A
Power dissipation: 33W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STD2N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LD39100PU18RY |
|
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.8V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.8V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSH24IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 15V/μs
Integrated circuit features: high speed
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.65µA
Input offset current: 65nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 15V/μs
Integrated circuit features: high speed
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.65µA
Input offset current: 65nA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| L9663 |
|
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube
Type of integrated circuit: interface
Mounting: SMD
Case: TQFP32
Kind of package: tube
Interface: PSI5; SPI
Kind of integrated circuit: transceiver
Number of channels: 2
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube
Type of integrated circuit: interface
Mounting: SMD
Case: TQFP32
Kind of package: tube
Interface: PSI5; SPI
Kind of integrated circuit: transceiver
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| TSU102IST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV
Type of integrated circuit: operational amplifier
Bandwidth: 9kHz
Number of channels: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 3.4mV
Slew rate: 3mV/μs
Integrated circuit features: nanopower; rail-to-rail
Input bias current: 30pA
Voltage supply range: 1.5...5.5V DC
Quiescent current: 950nA
Kind of package: reel; tape
Input offset current: 30pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV
Type of integrated circuit: operational amplifier
Bandwidth: 9kHz
Number of channels: 2
Mounting: SMT
Case: MSOP8
Operating temperature: -40...85°C
Input offset voltage: 3.4mV
Slew rate: 3mV/μs
Integrated circuit features: nanopower; rail-to-rail
Input bias current: 30pA
Voltage supply range: 1.5...5.5V DC
Quiescent current: 950nA
Kind of package: reel; tape
Input offset current: 30pA
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| P0111MA 1AA3 |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 25µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
Category: SMD/THT thyristors
Description: Thyristor: standard; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 25µA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Kind of package: bulk
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
| STM6315SDW13F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT143-4
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.63V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT143-4
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.63V
Number of channels: 1
Produkt ist nicht verfügbar
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| TYN1212RG |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 120A
Kind of package: tube
Gate current: 15mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 120A
Kind of package: tube
Gate current: 15mA
Type of thyristor: thyristor
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
| TN4050-12PI |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT
Mounting: THT
Max. forward impulse current: 0.4kA
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 25A
Max. load current: 40A
Kind of package: tube
Case: TOP3I
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT
Mounting: THT
Max. forward impulse current: 0.4kA
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 25A
Max. load current: 40A
Kind of package: tube
Case: TOP3I
Type of thyristor: standard
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| TN5050H-12WY |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Max. off-state voltage: 1.2kV
Load current: 32A
Case: TO247
Mounting: THT
Max. load current: 50A
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: high temperature
Application: automotive industry
Gate current: 50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Max. off-state voltage: 1.2kV
Load current: 32A
Case: TO247
Mounting: THT
Max. load current: 50A
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: high temperature
Application: automotive industry
Gate current: 50mA
Type of thyristor: thyristor
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| TSC2010IST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
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| TSC2010IYST |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STP8NK80Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
| STW30N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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Stück im Wert von UAH
| ISO8200B |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: PowerSO36
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
DC supply current: 9mA
Interface: SPI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: PowerSO36
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
DC supply current: 9mA
Interface: SPI
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| ISO8200BQ |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: TFQFPN32
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
Integrated circuit features: galvanically isolated
DC supply current: 9mA
Interface: SPI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 8
Mounting: SMD
Case: TFQFPN32
On-state resistance: 0.11Ω
Kind of package: tube
Supply voltage: 10.5...36V
Integrated circuit features: galvanically isolated
DC supply current: 9mA
Interface: SPI
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)