Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (161879) > Seite 2677 nach 2698
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| T2035H-8G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: D2PAK Gate current: 35mA Max. forward impulse current: 210A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| T2035H-8I | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 210A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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| T2035H-8G | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: D2PAK Gate current: 35mA Max. forward impulse current: 210A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
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X0202MN 5BA4 | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1.25A; 0.8A; Igt: 200uA; SOT223; SMD Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1.25A Load current: 0.8A Gate current: 0.2mA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
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TN5050H-12WY | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube Mounting: THT Case: TO247 Type of thyristor: thyristor Kind of package: tube Gate current: 50mA Load current: 32A Max. load current: 50A Max. forward impulse current: 0.4kA Max. off-state voltage: 1.2kV Application: automotive industry Features of semiconductor devices: high temperature |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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VND5050JTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 18A; PowerSSO12; 4.5÷36V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 18A Mounting: SMD Number of channels: 2 Case: PowerSSO12 Supply voltage: 4.5...36V Kind of package: reel; tape On-state resistance: 50mΩ |
auf Bestellung 2479 Stücke: Lieferzeit 14-21 Tag (e) |
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FERD30H100STS | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB Semiconductor structure: single diode Case: TO220AB Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 0.51...0.6mm Max. forward voltage: 0.405V Load current: 30A Max. load current: 45A Max. off-state voltage: 100V Max. forward impulse current: 250A |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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| FERD30H100SB-TR | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 30A; DPAK; Ufmax: 0.44V; Ifsm: 150A Semiconductor structure: single diode Case: DPAK Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Features of semiconductor devices: ultrafast switching Leakage current: 0.13mA Max. forward voltage: 0.44V Load current: 30A Max. load current: 45A Max. off-state voltage: 100V Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |
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| BAT46AWFILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 100V; 0.15A Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: common anode Max. forward voltage: 0.45V Max. forward impulse current: 1A Leakage current: 5µA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STGWA50IH65DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 158nC Kind of package: tube |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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STM8L152C6U6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: UFQFPN48 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; SPI; USART Integrated circuit features: Beeper; IWDG; RTC; WWDG Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Family: STM8L Kind of core: 8-bit Number of 12bit A/D converters: 25 Number of comparators: 2 Number of 12bit D/A converters: 1 |
Produkt ist nicht verfügbar |
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1.5KE100CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 100V; 11A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 11A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGY40NC60VD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 50A; 260W; MAX247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 260W Case: MAX247 Gate-emitter voltage: ±20V Mounting: THT Gate charge: 214nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP105N3LL | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: STripFET™ H6 Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 42nC On-state resistance: 4.5mΩ Power dissipation: 140W Drain-source voltage: 30V Drain current: 105A Pulsed drain current: 320A |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T22A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 20A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T22AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 20A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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STF8N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 16.5nC |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL8N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.5A Power dissipation: 42W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 16.5nC |
Produkt ist nicht verfügbar |
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| STM32G081RBI6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFBGA64; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 60 Case: UFBGA64 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 19 Kind of package: in-tray Number of 32bit timers: 1 |
Produkt ist nicht verfügbar |
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| STM32G081RBT3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 60 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...125°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 19 Kind of package: in-tray Number of 32bit timers: 1 |
Produkt ist nicht verfügbar |
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SMCJ15CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.6V; 64A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 64A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
auf Bestellung 629 Stücke: Lieferzeit 14-21 Tag (e) |
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| STPS3060CW | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247; Ufmax: 1.05V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 1.05V Max. load current: 30A Max. forward impulse current: 200A Leakage current: 100mA Kind of package: tube |
Produkt ist nicht verfügbar |
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STM8S105S4T6C | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3 Interface: I2C; IrDA; SPI; UART Mounting: SMD Family: STM8S Type of integrated circuit: STM8 microcontroller Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 9 Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Clock frequency: 16MHz Kind of core: 8-bit Integrated circuit features: Beeper; IWDG; WWDG Case: LQFP44 |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
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| STEVAL-IPFC01V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STNRGPF01; 111kHz; Ch: 3; 3kW; 90÷265VAC Frequency: 111kHz Kit contents: adapter; base board Kind of connector: screw Components: STNRGPF01 Operating voltage: 90...265V AC Number of channels: 3 Power: 3kW Additional functions: active PFC Type of development kit: evaluation |
Produkt ist nicht verfügbar |
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STW56N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 52mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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TIP29C | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 361 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP29A | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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TDA7265 | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier Type of integrated circuit: audio amplifier |
Produkt ist nicht verfügbar |
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BAT30SWFILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Semiconductor structure: double series Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Case: SOT323 Load current: 0.3A Max. forward voltage: 0.53V Max. forward impulse current: 1A Max. off-state voltage: 30V |
auf Bestellung 3900 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ188CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209V Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ Max. forward impulse current: 6A |
auf Bestellung 4695 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ188A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ Max. forward impulse current: 6A |
auf Bestellung 429 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL220N6F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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STPS10H100CFP | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V Type of diode: Schottky rectifying Case: TO220FP Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 180A Kind of package: tube Max. load current: 10A |
auf Bestellung 1168 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ40A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
auf Bestellung 6133 Stücke: Lieferzeit 14-21 Tag (e) |
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| STPS5L60SF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| STPS5L60SFY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. load current: 15A Leakage current: 150mA Max. forward impulse current: 220A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| STPS5L60SY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 150A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BUL743 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 12A Power dissipation: 100W Case: TO220AB Pulsed collector current: 24A Current gain: 24...80 Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
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| VL53L5CXV0GC/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L5CXV0GC/1 |
auf Bestellung 5898 Stücke: Lieferzeit 14-21 Tag (e) |
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| STEVAL-ILL059V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board Type of development kit: evaluation Components: STAP16DPS05; STM8A Kind of connector: Jack 3.5mm socket Kind of integrated circuit: LED driver Kit contents: base board Additional functions: DC/DC converter |
Produkt ist nicht verfügbar |
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| STEVAL-ILL060V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STAP16DPPS05,STM8A; No.of diodes: 32 Type of development kit: evaluation Components: STAP16DPPS05; STM8A Interface: SPI Kind of connector: Jack 3.5mm socket Operating voltage: 6...24V DC Kit contents: base board Additional functions: DC/DC converter Number of diodes: 32 |
Produkt ist nicht verfügbar |
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| STEVAL-ILL061V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC Type of development kit: evaluation Components: LED1642GW; STM32F103CX Interface: PWM; SPI Kind of connector: Jack 3.5mm socket; pin strips Operating voltage: 6...28V DC Kit contents: base board Additional functions: DC/DC converter Number of diodes: 16 |
Produkt ist nicht verfügbar |
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| STEVAL-ILL073V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC Type of development kit: evaluation Components: ALED1642GW; STM8A Interface: PWM; SPI; UART Kind of connector: Jack 3.5mm socket; pin strips Frequency: 1MHz Operating voltage: 6...28V DC Kind of integrated circuit: LED driver Kit contents: base board Additional functions: DC/DC converter |
Produkt ist nicht verfügbar |
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1N5819 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.55V Load current: 1A Max. forward impulse current: 25A Max. load current: 10A Max. off-state voltage: 40V Kind of package: Ammo Pack |
auf Bestellung 712 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL13N60M6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP13N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.43Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STD12N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| LD39130SPUR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6 Manufacturer series: LD39130S Integrated circuit features: GREEN MODE pin; shutdown mode control input Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Voltage drop: 0.3V Output current: 0.3A Output voltage: 0.8...4V Number of channels: 1 Tolerance: ±1.5% Input voltage: 1.4...5.5V Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape Case: DFN6 |
Produkt ist nicht verfügbar |
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| LD39020DTPU33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.3V Output current: 0.2A Case: DFN4 Mounting: SMD Manufacturer series: LD39020 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.5...5.5V |
Produkt ist nicht verfügbar |
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| VIPER115LSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STW13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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| M24C64-DFCT6TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| M24C64-DRDW3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| M24C64-DRMN3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE22A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 49A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMBJ26A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30.4V; 14.9A; unidirectional; SMB; reel,tape; SMBJ Manufacturer series: SMBJ Mounting: SMD Case: SMB Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 14.9A Max. off-state voltage: 26V Breakdown voltage: 30.4V Peak pulse power dissipation: 0.6kW |
auf Bestellung 2560 Stücke: Lieferzeit 14-21 Tag (e) |
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| STELLARLINK | STMicroelectronics |
Category: ProgrammersDescription: Programmer: microcontrollers; USB; JTAG,USB Type of ICs programmer: microcontrollers Communication with PC: USB Interface: USB Kind of connector: JTAG; USB |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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LF50CV | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT Type of integrated circuit: voltage regulator Input voltage: 6...16V Output voltage: 5V Output current: 0.5A Case: TO220AB Mounting: THT Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube Heatsink thickness: 0.51...0.6mm Voltage drop: 0.45V Tolerance: ±2% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
auf Bestellung 602 Stücke: Lieferzeit 14-21 Tag (e) |
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LF50ABDT-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX Type of integrated circuit: voltage regulator Input voltage: 6...16V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Voltage drop: 0.45V Tolerance: ±1% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
auf Bestellung 831 Stücke: Lieferzeit 14-21 Tag (e) |
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LF50ABDT-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX Type of integrated circuit: voltage regulator Input voltage: 6...16V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Voltage drop: 0.45V Tolerance: ±1% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
auf Bestellung 2552 Stücke: Lieferzeit 14-21 Tag (e) |
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| T2035H-8G-TR |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T2035H-8I |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T2035H-8G |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| X0202MN 5BA4 |
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Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1.25A; 0.8A; Igt: 200uA; SOT223; SMD
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 0.2mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1.25A; 0.8A; Igt: 200uA; SOT223; SMD
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 0.2mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 140+ | 0.51 EUR |
| 241+ | 0.3 EUR |
| 269+ | 0.27 EUR |
| TN5050H-12WY |
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Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Mounting: THT
Case: TO247
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 32A
Max. load current: 50A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.2kV
Application: automotive industry
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Mounting: THT
Case: TO247
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 32A
Max. load current: 50A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.2kV
Application: automotive industry
Features of semiconductor devices: high temperature
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.39 EUR |
| 13+ | 5.81 EUR |
| 15+ | 4.83 EUR |
| 30+ | 4.48 EUR |
| VND5050JTR-E |
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Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 18A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 18A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
auf Bestellung 2479 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 32+ | 2.29 EUR |
| FERD30H100STS |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.405V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.405V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 62+ | 1.16 EUR |
| FERD30H100SB-TR |
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Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 30A; DPAK; Ufmax: 0.44V; Ifsm: 150A
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Leakage current: 0.13mA
Max. forward voltage: 0.44V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 150A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 30A; DPAK; Ufmax: 0.44V; Ifsm: 150A
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Leakage current: 0.13mA
Max. forward voltage: 0.44V
Load current: 30A
Max. load current: 45A
Max. off-state voltage: 100V
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT46AWFILM |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 100V; 0.15A
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: common anode
Max. forward voltage: 0.45V
Max. forward impulse current: 1A
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 100V; 0.15A
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: common anode
Max. forward voltage: 0.45V
Max. forward impulse current: 1A
Leakage current: 5µA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 1283+ | 0.056 EUR |
| 1401+ | 0.051 EUR |
| 1507+ | 0.047 EUR |
| 1593+ | 0.045 EUR |
| 1780+ | 0.04 EUR |
| STGWA50IH65DF |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.32 EUR |
| 15+ | 4.79 EUR |
| 17+ | 4.43 EUR |
| STM8L152C6U6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Family: STM8L
Kind of core: 8-bit
Number of 12bit A/D converters: 25
Number of comparators: 2
Number of 12bit D/A converters: 1
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Family: STM8L
Kind of core: 8-bit
Number of 12bit A/D converters: 25
Number of comparators: 2
Number of 12bit D/A converters: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE100CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 11A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 11A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 104+ | 0.69 EUR |
| 142+ | 0.51 EUR |
| 250+ | 0.43 EUR |
| STGY40NC60VD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 260W; MAX247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 260W
Case: MAX247
Gate-emitter voltage: ±20V
Mounting: THT
Gate charge: 214nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 260W; MAX247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 260W
Case: MAX247
Gate-emitter voltage: ±20V
Mounting: THT
Gate charge: 214nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.88 EUR |
| 11+ | 6.56 EUR |
| STP105N3LL |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ H6
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 4.5mΩ
Power dissipation: 140W
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: STripFET™ H6
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 42nC
On-state resistance: 4.5mΩ
Power dissipation: 140W
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 105+ | 0.69 EUR |
| 117+ | 0.61 EUR |
| SM6T22A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 214+ | 0.33 EUR |
| 242+ | 0.3 EUR |
| 319+ | 0.22 EUR |
| 358+ | 0.2 EUR |
| 417+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| SM6T22AY |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF8N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
auf Bestellung 175 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 50+ | 1.93 EUR |
| STL8N80K5 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STM32G081RBI6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFBGA64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: UFBGA64
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 19
Kind of package: in-tray
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFBGA64; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: UFBGA64
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 19
Kind of package: in-tray
Number of 32bit timers: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STM32G081RBT3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...125°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 19
Kind of package: in-tray
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...125°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 19
Kind of package: in-tray
Number of 32bit timers: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ15CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 117+ | 0.62 EUR |
| 129+ | 0.55 EUR |
| 143+ | 0.5 EUR |
| 159+ | 0.45 EUR |
| 250+ | 0.39 EUR |
| 500+ | 0.35 EUR |
| STPS3060CW |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 1.05V
Max. load current: 30A
Max. forward impulse current: 200A
Leakage current: 100mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO247; Ufmax: 1.05V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 1.05V
Max. load current: 30A
Max. forward impulse current: 200A
Leakage current: 100mA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM8S105S4T6C |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 8-bit
Integrated circuit features: Beeper; IWDG; WWDG
Case: LQFP44
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Clock frequency: 16MHz
Kind of core: 8-bit
Integrated circuit features: Beeper; IWDG; WWDG
Case: LQFP44
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.13 EUR |
| 36+ | 1.99 EUR |
| 38+ | 1.9 EUR |
| 39+ | 1.87 EUR |
| STEVAL-IPFC01V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STNRGPF01; 111kHz; Ch: 3; 3kW; 90÷265VAC
Frequency: 111kHz
Kit contents: adapter; base board
Kind of connector: screw
Components: STNRGPF01
Operating voltage: 90...265V AC
Number of channels: 3
Power: 3kW
Additional functions: active PFC
Type of development kit: evaluation
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STNRGPF01; 111kHz; Ch: 3; 3kW; 90÷265VAC
Frequency: 111kHz
Kit contents: adapter; base board
Kind of connector: screw
Components: STNRGPF01
Operating voltage: 90...265V AC
Number of channels: 3
Power: 3kW
Additional functions: active PFC
Type of development kit: evaluation
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW56N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP29C |
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Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 119+ | 0.6 EUR |
| 137+ | 0.52 EUR |
| 152+ | 0.47 EUR |
| 168+ | 0.43 EUR |
| TIP29A |
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Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 136+ | 0.53 EUR |
| 147+ | 0.49 EUR |
| 162+ | 0.44 EUR |
| 175+ | 0.41 EUR |
| TDA7265 |
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Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT30SWFILM |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Semiconductor structure: double series
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT323
Load current: 0.3A
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Semiconductor structure: double series
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT323
Load current: 0.3A
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
auf Bestellung 3900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| 804+ | 0.089 EUR |
| 867+ | 0.083 EUR |
| 1064+ | 0.067 EUR |
| 1180+ | 0.061 EUR |
| 3000+ | 0.056 EUR |
| SMAJ188CA-TR | ![]() |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 6A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 6A
auf Bestellung 4695 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| SMAJ188A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 6A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 6A
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| STL220N6F7 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS10H100CFP |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
auf Bestellung 1168 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 155+ | 0.46 EUR |
| 232+ | 0.31 EUR |
| SMAJ40A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 6133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| STPS5L60SF |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS5L60SFY |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. load current: 15A
Leakage current: 150mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. load current: 15A
Leakage current: 150mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS5L60SY |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUL743 |
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Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 12A
Power dissipation: 100W
Case: TO220AB
Pulsed collector current: 24A
Current gain: 24...80
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 500V; 12A; 100W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 12A
Power dissipation: 100W
Case: TO220AB
Pulsed collector current: 24A
Current gain: 24...80
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.55 EUR |
| 48+ | 1.5 EUR |
| 52+ | 1.39 EUR |
| 100+ | 1.24 EUR |
| 250+ | 1.14 EUR |
| 500+ | 1.13 EUR |
| VL53L5CXV0GC/1 |
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auf Bestellung 5898 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3600+ | 7.75 EUR |
| STEVAL-ILL059V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Kind of connector: Jack 3.5mm socket
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Kind of connector: Jack 3.5mm socket
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
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| STEVAL-ILL060V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPPS05,STM8A; No.of diodes: 32
Type of development kit: evaluation
Components: STAP16DPPS05; STM8A
Interface: SPI
Kind of connector: Jack 3.5mm socket
Operating voltage: 6...24V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 32
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPPS05,STM8A; No.of diodes: 32
Type of development kit: evaluation
Components: STAP16DPPS05; STM8A
Interface: SPI
Kind of connector: Jack 3.5mm socket
Operating voltage: 6...24V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 32
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| STEVAL-ILL061V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC
Type of development kit: evaluation
Components: LED1642GW; STM32F103CX
Interface: PWM; SPI
Kind of connector: Jack 3.5mm socket; pin strips
Operating voltage: 6...28V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 16
Category: STM development kits
Description: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC
Type of development kit: evaluation
Components: LED1642GW; STM32F103CX
Interface: PWM; SPI
Kind of connector: Jack 3.5mm socket; pin strips
Operating voltage: 6...28V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 16
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| STEVAL-ILL073V1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC
Type of development kit: evaluation
Components: ALED1642GW; STM8A
Interface: PWM; SPI; UART
Kind of connector: Jack 3.5mm socket; pin strips
Frequency: 1MHz
Operating voltage: 6...28V DC
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
Category: STM development kits
Description: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC
Type of development kit: evaluation
Components: ALED1642GW; STM8A
Interface: PWM; SPI; UART
Kind of connector: Jack 3.5mm socket; pin strips
Frequency: 1MHz
Operating voltage: 6...28V DC
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
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| 1N5819 |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 712+ | 0.1 EUR |
| STL13N60M6 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.12 EUR |
| STP13N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| STD12N60M2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
| LD39130SPUR |
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Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Manufacturer series: LD39130S
Integrated circuit features: GREEN MODE pin; shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.3V
Output current: 0.3A
Output voltage: 0.8...4V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.4...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: DFN6
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Manufacturer series: LD39130S
Integrated circuit features: GREEN MODE pin; shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.3V
Output current: 0.3A
Output voltage: 0.8...4V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.4...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: DFN6
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| LD39020DTPU33R |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.2A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39020
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.2A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39020
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Produkt ist nicht verfügbar
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| VIPER115LSTR |
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Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.72 EUR |
| STW13N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.88 EUR |
| 18+ | 4.1 EUR |
| M24C64-DFCT6TP/K |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.3 EUR |
| M24C64-DRDW3TP/K |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.61 EUR |
| M24C64-DRMN3TP/K |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.61 EUR |
| 1.5KE22A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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| SMBJ26A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; unidirectional; SMB; reel,tape; SMBJ
Manufacturer series: SMBJ
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 14.9A
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; unidirectional; SMB; reel,tape; SMBJ
Manufacturer series: SMBJ
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 14.9A
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Peak pulse power dissipation: 0.6kW
auf Bestellung 2560 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 291+ | 0.25 EUR |
| 343+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 443+ | 0.16 EUR |
| 516+ | 0.14 EUR |
| 569+ | 0.13 EUR |
| 650+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| STELLARLINK |
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Hersteller: STMicroelectronics
Category: Programmers
Description: Programmer: microcontrollers; USB; JTAG,USB
Type of ICs programmer: microcontrollers
Communication with PC: USB
Interface: USB
Kind of connector: JTAG; USB
Category: Programmers
Description: Programmer: microcontrollers; USB; JTAG,USB
Type of ICs programmer: microcontrollers
Communication with PC: USB
Interface: USB
Kind of connector: JTAG; USB
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 207.11 EUR |
| LF50CV |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 76+ | 0.95 EUR |
| 87+ | 0.83 EUR |
| 100+ | 0.79 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.7 EUR |
| LF50ABDT-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 831 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 89+ | 0.81 EUR |
| 96+ | 0.75 EUR |
| 110+ | 0.65 EUR |
| 500+ | 0.56 EUR |
| LF50ABDT-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 2552 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 70+ | 1.03 EUR |
| 77+ | 0.94 EUR |
| 87+ | 0.83 EUR |
| 94+ | 0.76 EUR |
| 101+ | 0.71 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.64 EUR |
| 2500+ | 0.6 EUR |























