Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (161879) > Seite 2678 nach 2698
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LF50ABDT-TRY | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX Type of integrated circuit: voltage regulator Input voltage: 2.5...16V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Voltage drop: 0.45V Tolerance: ±1% Application: automotive industry Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
auf Bestellung 1934 Stücke: Lieferzeit 14-21 Tag (e) |
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LF50ABV | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT Type of integrated circuit: voltage regulator Input voltage: 6...16V Output voltage: 5V Output current: 0.5A Case: TO220AB Mounting: THT Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube Heatsink thickness: 0.51...0.6mm Voltage drop: 0.45V Tolerance: ±1% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| LF50ABPT-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PPAK; SMD; LFXX Type of integrated circuit: voltage regulator Input voltage: 2.5...16V Output voltage: 5V Output current: 0.5A Case: PPAK Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Voltage drop: 0.45V Tolerance: ±1% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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LF50ABV-DG | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT Type of integrated circuit: voltage regulator Input voltage: 2.5...16V Output voltage: 5V Output current: 0.5A Case: TO220AB Mounting: THT Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube Heatsink thickness: 1.23...1.32mm Voltage drop: 0.45V Tolerance: ±1% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| LF50CPT-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PPAK; SMD; LFXX Type of integrated circuit: voltage regulator Input voltage: 2.5...16V Output voltage: 5V Output current: 0.5A Case: PPAK Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape Voltage drop: 0.45V Tolerance: ±2% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| T410-800H | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A Mounting: THT Type of thyristor: triac Gate current: 10mA Max. load current: 4A Max. off-state voltage: 0.8kV Max. forward impulse current: 31A Kind of package: tube Case: IPAK |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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| ACST410-8FP | STMicroelectronics |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube Mounting: THT Gate current: 10mA Number of switches: 1 Max. load current: 4A Max. off-state voltage: 0.8kV Type of thyristor: AC switch Technology: ASD™ Kind of package: tube Case: TO220FP |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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BD677 | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
auf Bestellung 1268 Stücke: Lieferzeit 14-21 Tag (e) |
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| VIPER013BLSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
auf Bestellung 125000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ130A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 130V Breakdown voltage: 152V Max. forward impulse current: 3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
auf Bestellung 686 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ170CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 170V Breakdown voltage: 199V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
auf Bestellung 1788 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ13CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.2V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
auf Bestellung 908 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ10A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 37A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
auf Bestellung 2230 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5817 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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SMAJ28CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 39A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Kind of package: reel; tape |
auf Bestellung 2056 Stücke: Lieferzeit 14-21 Tag (e) |
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| STM32F051K8U7TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 27 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: HDMI CEC; I2C; SPI; USART x2 Kind of architecture: Cortex M0 Memory: 8kB SRAM; 64kB FLASH Number of 16bit timers: 7 Number of 32bit timers: 1 Family: STM32F0 Kind of core: 32-bit Number of 12bit D/A converters: 1 Number of 12bit A/D converters: 13 Operating temperature: -40...105°C Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STL10N60M6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Power dissipation: 48W Case: PowerFLAT 5x6 On-state resistance: 0.66Ω Mounting: SMD Kind of channel: enhancement Gate charge: 8.8nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STPS3L45AF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA flat Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.57V Leakage current: 135mA Max. forward impulse current: 75A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STM32F411RCT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller Type of integrated circuit: STM32 ARM microcontroller |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH1002CR | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying Type of diode: rectifying |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH1002CB-TR | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 50A Case: DPAK Max. forward voltage: 0.78V Reverse recovery time: 20ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SCTH35N65G2V-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 208W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SCTH35N65G2V-7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 208W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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TSV992IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV Type of integrated circuit: operational amplifier Case: SO8 Mounting: SMT Integrated circuit features: low voltage; rail-to-rail Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 0.1nA Input offset current: 0.1nA Quiescent current: 1.1mA Input offset voltage: 7.5mV Number of channels: 2 Voltage supply range: 2.5...5.5V DC Slew rate: 10V/μs Bandwidth: 20MHz |
auf Bestellung 2489 Stücke: Lieferzeit 14-21 Tag (e) |
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TSV994IPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV Type of integrated circuit: operational amplifier Case: TSSOP14 Mounting: SMT Integrated circuit features: low voltage; rail-to-rail Kind of package: reel; tape Operating temperature: -40...125°C Input offset current: 0.1nA Input bias current: 0.1nA Quiescent current: 1.1mA Input offset voltage: 7.5mV Number of channels: 4 Voltage supply range: 2.5...5.5V DC Slew rate: 10V/μs Bandwidth: 20MHz |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
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STP35N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 210W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STB35N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| Z0103MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| Z0103MN 6AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 3mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| Z0103NA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 3mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STD13NM60ND | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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M95512-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
auf Bestellung 1138 Stücke: Lieferzeit 14-21 Tag (e) |
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M95512-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
auf Bestellung 1019 Stücke: Lieferzeit 14-21 Tag (e) |
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M95512-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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TS912AIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 4546 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 2533 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912BIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 2mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 1202 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912ID | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: tube Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 1161 Stücke: Lieferzeit 14-21 Tag (e) |
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TS912IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 800kHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TS912AIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TS912BIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
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| LET9120 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; RF; 80V; 18A; 200W; M246; Pout: 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 18A Power dissipation: 200W Case: M246 Kind of package: bulk Kind of channel: enhancement Kind of transistor: RF Mechanical mounting: screw Open-loop gain: 18dB Efficiency: 70% Output power: 150W Frequency: 860MHz Electrical mounting: FASTON connectors; soldering; THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BD243C | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 115V Collector current: 6A Case: TO220 Mounting: THT Frequency: 3MHz Power: 65W |
Produkt ist nicht verfügbar |
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BD677A | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
auf Bestellung 845 Stücke: Lieferzeit 14-21 Tag (e) |
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| M24C02-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN5 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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STSPIN220 | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Case: VFQFPN16 Output current: 1.3A Mounting: SMD On-state resistance: 0.4Ω Operating temperature: -40...150°C Operating voltage: 1.8...10V DC Kind of package: in-tray |
auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) |
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FERD30H60CTS | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Reverse recovery time: 0.5µs Heatsink thickness: 0.51...0.6mm Max. forward voltage: 0.41V Load current: 15A x2 Max. load current: 60A Max. off-state voltage: 60V Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
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FERD30M45CT | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.35V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 45V Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FERD30SM100ST | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB Semiconductor structure: single diode Case: TO220AB Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.39V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 250A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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STPS10H100CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 180A Kind of package: tube Max. load current: 10A Heatsink thickness: 1.23...1.32mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| STPS10H100SFY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| STL15N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 52W Case: PowerFLAT 5x6 On-state resistance: 375mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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LDK120M33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 0.2A Case: SOT23-5 Mounting: SMD Manufacturer series: LDK120 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
auf Bestellung 4158 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB20NM60T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SMB6F15AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STFW40N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 34A Power dissipation: 63W Case: TO3PF On-state resistance: 78mΩ Mounting: THT Gate charge: 57nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SM6T15CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2254 Stücke: Lieferzeit 14-21 Tag (e) |
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| M24C04-DRDW3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS30L45CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.74V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.74V Max. load current: 30A Max. forward impulse current: 220A Leakage current: 200mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW43NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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| LF50ABDT-TRY |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Application: automotive industry
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Application: automotive industry
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 1934 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 74+ | 0.98 EUR |
| 83+ | 0.86 EUR |
| 100+ | 0.77 EUR |
| 1000+ | 0.75 EUR |
| LF50ABV |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 83+ | 0.86 EUR |
| 91+ | 0.79 EUR |
| 97+ | 0.74 EUR |
| 102+ | 0.7 EUR |
| 250+ | 0.66 EUR |
| LF50ABPT-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: PPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: PPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LF50ABV-DG |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Voltage drop: 0.45V
Tolerance: ±1%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LF50CPT-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: PPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Input voltage: 2.5...16V
Output voltage: 5V
Output current: 0.5A
Case: PPAK
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T410-800H |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 31A
Kind of package: tube
Case: IPAK
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Mounting: THT
Type of thyristor: triac
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 31A
Kind of package: tube
Case: IPAK
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 96+ | 0.75 EUR |
| 135+ | 0.53 EUR |
| 172+ | 0.42 EUR |
| ACST410-8FP |
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Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube
Mounting: THT
Gate current: 10mA
Number of switches: 1
Max. load current: 4A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Technology: ASD™
Kind of package: tube
Case: TO220FP
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; TO220FP; THT; tube
Mounting: THT
Gate current: 10mA
Number of switches: 1
Max. load current: 4A
Max. off-state voltage: 0.8kV
Type of thyristor: AC switch
Technology: ASD™
Kind of package: tube
Case: TO220FP
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 82+ | 0.87 EUR |
| 88+ | 0.82 EUR |
| 100+ | 0.77 EUR |
| BD677 |
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Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 1268 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 188+ | 0.38 EUR |
| 212+ | 0.34 EUR |
| 268+ | 0.27 EUR |
| 291+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| VIPER013BLSTR |
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Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
auf Bestellung 125000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.6 EUR |
| SMBJ130A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 686 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 133+ | 0.54 EUR |
| 149+ | 0.48 EUR |
| 192+ | 0.37 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.3 EUR |
| SMBJ170CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
auf Bestellung 1788 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 236+ | 0.3 EUR |
| 274+ | 0.26 EUR |
| 341+ | 0.21 EUR |
| 350+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 1300+ | 0.16 EUR |
| SMBJ13CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 236+ | 0.3 EUR |
| 268+ | 0.27 EUR |
| 309+ | 0.23 EUR |
| 365+ | 0.2 EUR |
| 374+ | 0.19 EUR |
| 394+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| SMBJ10A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 2230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 212+ | 0.34 EUR |
| 236+ | 0.3 EUR |
| 311+ | 0.23 EUR |
| 353+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 1N5817 |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.41 EUR |
| SMAJ28CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
auf Bestellung 2056 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 345+ | 0.21 EUR |
| 388+ | 0.18 EUR |
| 463+ | 0.15 EUR |
| 527+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 676+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| STM32F051K8U7TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| STL10N60M6 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STPS3L45AF |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32F411RCT7 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 4.83 EUR |
| STTH1002CR |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 177+ | 0.4 EUR |
| 191+ | 0.37 EUR |
| 200+ | 0.36 EUR |
| STTH1002CB-TR |
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Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SCTH35N65G2V-7 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SCTH35N65G2V-7AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSV992IDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.1nA
Input offset current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.1nA
Input offset current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.57 EUR |
| 54+ | 1.33 EUR |
| 61+ | 1.19 EUR |
| 69+ | 1.04 EUR |
| 100+ | 0.9 EUR |
| TSV994IPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.64 EUR |
| 50+ | 1.46 EUR |
| 55+ | 1.32 EUR |
| 59+ | 1.23 EUR |
| STP35N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB35N60DM2 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 3.75 EUR |
| Z0103MA 2AL2 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Z0103MN 6AA4 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Z0103NA 2AL2 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD13NM60ND |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M95512-RMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1138 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 250+ | 0.72 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.64 EUR |
| M95512-RDW6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 1019 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 83+ | 0.87 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.73 EUR |
| M95512-RMN6P |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS912AIDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 4546 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.53 EUR |
| 57+ | 1.27 EUR |
| 62+ | 1.16 EUR |
| 69+ | 1.04 EUR |
| 100+ | 0.9 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.71 EUR |
| TS912IDT | ![]() |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 2533 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 68+ | 1.07 EUR |
| 75+ | 0.96 EUR |
| 85+ | 0.85 EUR |
| 92+ | 0.78 EUR |
| 100+ | 0.73 EUR |
| 250+ | 0.69 EUR |
| 2500+ | 0.63 EUR |
| TS912BIDT | ![]() |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1202 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.64 EUR |
| 52+ | 1.39 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.1 EUR |
| 75+ | 0.97 EUR |
| 250+ | 0.9 EUR |
| TS912ID |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 54+ | 1.34 EUR |
| 55+ | 1.32 EUR |
| TS912IYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS912AIYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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| TS912BIYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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| LET9120 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 80V; 18A; 200W; M246; Pout: 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 18A
Power dissipation: 200W
Case: M246
Kind of package: bulk
Kind of channel: enhancement
Kind of transistor: RF
Mechanical mounting: screw
Open-loop gain: 18dB
Efficiency: 70%
Output power: 150W
Frequency: 860MHz
Electrical mounting: FASTON connectors; soldering; THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 80V; 18A; 200W; M246; Pout: 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 18A
Power dissipation: 200W
Case: M246
Kind of package: bulk
Kind of channel: enhancement
Kind of transistor: RF
Mechanical mounting: screw
Open-loop gain: 18dB
Efficiency: 70%
Output power: 150W
Frequency: 860MHz
Electrical mounting: FASTON connectors; soldering; THT
Produkt ist nicht verfügbar
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| BD243C |
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Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Produkt ist nicht verfügbar
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| BD677A |
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Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
auf Bestellung 845 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 131+ | 0.55 EUR |
| 167+ | 0.43 EUR |
| 185+ | 0.39 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.31 EUR |
| M24C02-FMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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| STSPIN220 |
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Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: VFQFPN16
Output current: 1.3A
Mounting: SMD
On-state resistance: 0.4Ω
Operating temperature: -40...150°C
Operating voltage: 1.8...10V DC
Kind of package: in-tray
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; VFQFPN16; 1.3A; 1.8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: VFQFPN16
Output current: 1.3A
Mounting: SMD
On-state resistance: 0.4Ω
Operating temperature: -40...150°C
Operating voltage: 1.8...10V DC
Kind of package: in-tray
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.83 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.4 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.89 EUR |
| FERD30H60CTS |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.41V
Load current: 15A x2
Max. load current: 60A
Max. off-state voltage: 60V
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 0.5µs
Heatsink thickness: 0.51...0.6mm
Max. forward voltage: 0.41V
Load current: 15A x2
Max. load current: 60A
Max. off-state voltage: 60V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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| FERD30M45CT |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.35V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 15Ax2; tube; Ifsm: 250A; TO220AB
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.35V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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| FERD30SM100ST |
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Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.39V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 30A; tube; Ifsm: 250A; TO220AB
Semiconductor structure: single diode
Case: TO220AB
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.39V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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| STPS10H100CT |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
Heatsink thickness: 1.23...1.32mm
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| STPS10H100SFY |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| STL15N65M5 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| LDK120M33R |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK120
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK120
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
auf Bestellung 4158 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 95+ | 0.76 EUR |
| 125+ | 0.58 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| STB20NM60T4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SMB6F15AY |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.14 EUR |
| STFW40N60M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SM6T15CAY |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2254 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 146+ | 0.49 EUR |
| 156+ | 0.46 EUR |
| 211+ | 0.34 EUR |
| 250+ | 0.31 EUR |
| M24C04-DRDW3TP/K |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.29 EUR |
| STPS30L45CT |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.74V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.74V
Max. load current: 30A
Max. forward impulse current: 220A
Leakage current: 200mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.74V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.74V
Max. load current: 30A
Max. forward impulse current: 220A
Leakage current: 200mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 57+ | 1.26 EUR |
| 68+ | 1.06 EUR |
| 76+ | 0.94 EUR |
| STW43NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 5.09 EUR |



















