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STGP10M65DF2 STGP10M65DF2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD97D56A928D0800D3&compId=STGP10M65DF2.pdf?ci_sign=5e0e29a7d49fea2f303af7d189e04fe1ceb0e228 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 143 Stücke:
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37+1.97 EUR
57+1.27 EUR
62+1.16 EUR
Mindestbestellmenge: 37
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NUCLEO-F410RB
+1
 		NUCLEO-F410RB STMicroelectronics NUCLEO-xxxxrx.pdf Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32F410RBT6
Type of development kit: STM32
Kit contents: base board
Components: STM32F410RBT6
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
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STL210N4F7 STMicroelectronics stl210n4f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STL210N4F7AG STMicroelectronics en.DM00256347.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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T835-600G T835-600G STMicroelectronics BTA08_BTB08_T8xx.pdf Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 80A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Technology: Snubberless™
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
auf Bestellung 214 Stücke:
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49+1.49 EUR
100+0.72 EUR
106+0.68 EUR
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T835-600G-TR
+1
 		T835-600G-TR STMicroelectronics t835.pdf Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
auf Bestellung 966 Stücke:
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49+1.47 EUR
69+1.05 EUR
85+0.85 EUR
115+0.62 EUR
250+0.54 EUR
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SMBJ20A-TR SMBJ20A-TR STMicroelectronics cd00001366.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 23.4V; 19.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.4V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
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500+0.14 EUR
631+0.11 EUR
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T835-600B-TR T835-600B-TR STMicroelectronics t835.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
auf Bestellung 1309 Stücke:
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81+0.89 EUR
121+0.59 EUR
148+0.48 EUR
162+0.44 EUR
250+0.42 EUR
500+0.39 EUR
1000+0.38 EUR
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t835-600b t835-600b STMicroelectronics T835-600B.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
auf Bestellung 257 Stücke:
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74+0.97 EUR
122+0.59 EUR
134+0.53 EUR
148+0.48 EUR
157+0.46 EUR
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T835-600H STMicroelectronics en.CD00002266.pdf Category: Triacs
Description: Triac; 600V; 8A; IPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: IPAK
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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STM32F378VCT6 STM32F378VCT6 STMicroelectronics stm32f378cc.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Case: LQFP100
Mounting: SMD
Family: STM32F3
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Supply voltage: 1.8V DC
Number of comparators: 2
Number of 12bit D/A converters: 3
Number of inputs/outputs: 83
Memory: 32kB SRAM; 256kB FLASH
Clock frequency: 72MHz
Kind of core: 32-bit
Type of integrated circuit: STM32 ARM microcontroller
Produkt ist nicht verfügbar
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STM32F746BGT6 STM32F746BGT6 STMicroelectronics en.DM00166116.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Produkt ist nicht verfügbar
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T410-600H STMicroelectronics en.CD00002383.pdf Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Mounting: THT
Gate current: 10mA
Type of thyristor: triac
Max. load current: 4A
Max. forward impulse current: 31A
Max. off-state voltage: 0.6kV
Case: IPAK
Kind of package: tube
Produkt ist nicht verfügbar
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T410-800T T410-800T STMicroelectronics en.CD00002383.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 31A
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
auf Bestellung 85 Stücke:
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54+1.33 EUR
84+0.85 EUR
85+0.84 EUR
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USB6B1 USB6B1 STMicroelectronics usb6b1.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 10µA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Produkt ist nicht verfügbar
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STGW30NC60VD STMicroelectronics en.CD00152202.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STPS340S STPS340S STMicroelectronics stps340.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMC
Max. forward voltage: 0.52V
Max. forward impulse current: 75A
Max. load current: 6A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
auf Bestellung 2380 Stücke:
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193+0.37 EUR
275+0.26 EUR
311+0.23 EUR
435+0.16 EUR
486+0.15 EUR
527+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 193
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STTH1212D STTH1212D STMicroelectronics STTH1212D-DTE.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 100A; TO220AC; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 12A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 100A
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
auf Bestellung 34 Stücke:
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34+2.1 EUR
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STGF19NC60KD STGF19NC60KD STMicroelectronics en.CD00196439.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
auf Bestellung 10 Stücke:
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10+7.15 EUR
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SMBJ12CA-TR SMBJ12CA-TR STMicroelectronics cd00001366.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 31A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1666 Stücke:
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358+0.2 EUR
481+0.15 EUR
535+0.13 EUR
577+0.12 EUR
1000+0.11 EUR
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STGIB10CH60S-XZ STMicroelectronics Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 66W
Output current: 10A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2B-26L
Produkt ist nicht verfügbar
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STGIB10CH60TS-XZ STMicroelectronics Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 66W
Output current: 10A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2B-26L
Produkt ist nicht verfügbar
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STPS1045D STPS1045D STMicroelectronics STPS1045D.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.23...1.32mm
auf Bestellung 184 Stücke:
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136+0.53 EUR
164+0.44 EUR
167+0.43 EUR
Mindestbestellmenge: 136
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STISO620TR STMicroelectronics stiso620.pdf Category: Unclassified
Description: STISO620TR
auf Bestellung 2500 Stücke:
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2500+0.41 EUR
Mindestbestellmenge: 2500
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STGP3NC120HD STGP3NC120HD STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEED9389163FE0C7&compId=STGx3NC120HD.pdf?ci_sign=28d109c69ddf7046490206a96c3a4aab61477cc0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 52 Stücke:
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36+1.99 EUR
47+1.53 EUR
50+1.47 EUR
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SCTW35N65G2V SCTW35N65G2V STMicroelectronics sctw35n65g2v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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5+14.47 EUR
6+12.71 EUR
30+11.54 EUR
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STM32F303VET7 STM32F303VET7 STMicroelectronics stm32f303rd.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
Produkt ist nicht verfügbar
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2STF2360 2STF2360 STMicroelectronics 2stf2360.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 1.4W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1.4W
Case: SOT89
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1768 Stücke:
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99+0.73 EUR
135+0.53 EUR
158+0.45 EUR
231+0.31 EUR
268+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 99
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ESDCAN05-2BWY ESDCAN05-2BWY STMicroelectronics esdcan05-2bwy.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 39V; 3A; 170W; bidirectional,double; SOT323-3L
Type of diode: TVS array
Breakdown voltage: 39V
Max. forward impulse current: 3A
Peak pulse power dissipation: 170W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT323-3L
Max. off-state voltage: 36V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry; CAN
Version: ESD
auf Bestellung 1265 Stücke:
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239+0.3 EUR
305+0.23 EUR
348+0.21 EUR
468+0.15 EUR
527+0.14 EUR
610+0.12 EUR
667+0.11 EUR
Mindestbestellmenge: 239
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BTB24-600BWRG BTB24-600BWRG STMicroelectronics BTx2x.pdf Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Produkt ist nicht verfügbar
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STPS3L60S STPS3L60S STMicroelectronics stps3l60s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 75A
Kind of package: reel; tape
auf Bestellung 106 Stücke:
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106+0.67 EUR
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STPS3L60Q STPS3L60Q STMicroelectronics en.CD00002286.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: Ammo Pack
Leakage current: 30mA
auf Bestellung 127 Stücke:
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127+0.56 EUR
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PD57018S-E STMicroelectronics en.CD00098308.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Produkt ist nicht verfügbar
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PD57018STR-E STMicroelectronics en.CD00098308.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Produkt ist nicht verfügbar
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PD57018TR-E STMicroelectronics en.CD00098308.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Produkt ist nicht verfügbar
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STGP10H60DF STMicroelectronics en.DM00092752.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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VNB35NV04TR-E VNB35NV04TR-E STMicroelectronics vnb35nv04-e.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 30A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 30A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 13mΩ
Output voltage: 36V
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ULN2801A ULN2801A STMicroelectronics ULN2802A.pdf Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load; PMOS/CMOS
Input voltage: 30V
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STW30N65M5 STW30N65M5 STMicroelectronics stw30n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics cd00001366.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.58V; 56A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.58V
Max. forward impulse current: 56A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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618+0.12 EUR
692+0.1 EUR
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1000+0.082 EUR
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STEVAL-ILL015V2 STMicroelectronics STEVAL-ILL015V2.pdf Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: LED2472G; 7.5÷18VDC; 700mA
Type of development kit: STM32
Kit contents: base board
Kind of connector: JTAG; pin strips; power supply; USB
Kind of integrated circuit: LED driver
Operating current: 0.7A
Operating voltage: 7.5...18V DC
Components: LED2472G
Interface: JTAG; USB
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STM32303E-EVAL STMicroelectronics DM00127343.pdf Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32F303VET6; Architecture: Cortex M4
Type of development kit: STM32
Kind of connector: Jack 3,5mm; microSD; pin strips; RS232/RS485; USB
Kind of architecture: Cortex M4
Components: STM32F303VET6
Interface: CAN 2.0A/B; GPIO; I2C; I2S; JTAG; SPI x3; USART x5; USB
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VNH5019ATR-E VNH5019ATR-E STMicroelectronics VNH5019A.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; MultiPowerSO30; 30A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Case: MultiPowerSO30
Output current: 30A
Number of channels: 2
Mounting: SMD
On-state resistance: 18mΩ
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 20kHz
Kind of package: reel; tape
Supply voltage: 5.5...24V
auf Bestellung 1041 Stücke:
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7+10.94 EUR
8+10.08 EUR
10+9.72 EUR
50+9.38 EUR
250+9.04 EUR
500+9.02 EUR
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STWA75N65DM6 STMicroelectronics stwa75n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STPS3045CT STPS3045CT STMicroelectronics STPS3045.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.57V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 220A
Semiconductor structure: common cathode; double
Case: TO220AB
auf Bestellung 76 Stücke:
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75+0.96 EUR
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STPS3045CGY-TR STMicroelectronics en.CD00268227.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 30A
Leakage current: 40mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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STPS3045DJF-TR STMicroelectronics en.CD00255681.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 45V; 30A
Type of diode: Schottky rectifying
Case: PowerFLAT 5x6
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. load current: 45A
Leakage current: 80mA
Max. forward impulse current: 380A
Kind of package: reel; tape
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STPS3045DJFY-TR STMicroelectronics en.DM00177331.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 45V; 30A
Type of diode: Schottky rectifying
Case: PowerFLAT 5x6
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. load current: 45A
Leakage current: 80mA
Max. forward impulse current: 380A
Kind of package: reel; tape
Application: automotive industry
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STM32F103T4U6A STMicroelectronics STM32F103C4T6A-DTE.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 6kB SRAM; 16kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
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STM32F103T6U6A STM32F103T6U6A STMicroelectronics STM32F103C4T6A-DTE.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 10kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
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STM32G4A1KEU6 STMicroelectronics stm32g4a1ce.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFQFPN32; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x2; I2C x3; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 112kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 11
Number of 12bit D/A converters: 4
Number of 16bit timers: 11
Number of 32bit timers: 1
Family: STM32G4
Kind of package: in-tray
Kind of core: 32-bit
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T835T-8T T835T-8T STMicroelectronics T835T-8T.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
auf Bestellung 364 Stücke:
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53+1.36 EUR
77+0.93 EUR
89+0.81 EUR
99+0.73 EUR
109+0.66 EUR
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T835T-6I T835T-6I STMicroelectronics en.CD00246420.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 63A
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T835T-8G STMicroelectronics en.DM00492889.pdf Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 84A
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T835T-8G-TR STMicroelectronics t835t-8g.pdf Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 84A
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T810-600G-TR T810-600G-TR STMicroelectronics t810.pdf Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Features of semiconductor devices: logic level
Mounting: SMD
Kind of package: reel; tape
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58+1.24 EUR
79+0.91 EUR
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250+0.55 EUR
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T810-600B T810-600B STMicroelectronics t810.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 15mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 15mA
Mounting: SMD
Kind of package: tube
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T810-600B-TR T810-600B-TR STMicroelectronics t810.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
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40+1.79 EUR
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STB100N10F7 STMicroelectronics std100n10f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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LM2904WHDT LM2904WHDT STMicroelectronics lm2904wh.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
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STGP10M65DF2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD97D56A928D0800D3&compId=STGP10M65DF2.pdf?ci_sign=5e0e29a7d49fea2f303af7d189e04fe1ceb0e228
STGP10M65DF2
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 143 Stücke:
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37+1.97 EUR
57+1.27 EUR
62+1.16 EUR
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NUCLEO-F410RB NUCLEO-xxxxrx.pdf
NUCLEO-F410RB
+1
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32F410RBT6
Type of development kit: STM32
Kit contents: base board
Components: STM32F410RBT6
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B mini
Number of add-on connectors: 2
Kind of architecture: Cortex M4
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STL210N4F7 stl210n4f7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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STL210N4F7AG en.DM00256347.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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T835-600G BTA08_BTB08_T8xx.pdf
T835-600G
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 80A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Technology: Snubberless™
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
auf Bestellung 214 Stücke:
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Anzahl Preis
49+1.49 EUR
100+0.72 EUR
106+0.68 EUR
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T835-600G-TR t835.pdf
T835-600G-TR
+1
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
auf Bestellung 966 Stücke:
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Anzahl Preis
49+1.47 EUR
69+1.05 EUR
85+0.85 EUR
115+0.62 EUR
250+0.54 EUR
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SMBJ20A-TR cd00001366.pdf
SMBJ20A-TR
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 23.4V; 19.4A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 23.4V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
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Anzahl Preis
500+0.14 EUR
631+0.11 EUR
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T835-600B-TR t835.pdf
T835-600B-TR
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
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Anzahl Preis
81+0.89 EUR
121+0.59 EUR
148+0.48 EUR
162+0.44 EUR
250+0.42 EUR
500+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 81
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t835-600b T835-600B.pdf
t835-600b
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 80A
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
122+0.59 EUR
134+0.53 EUR
148+0.48 EUR
157+0.46 EUR
Mindestbestellmenge: 74
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T835-600H en.CD00002266.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; IPAK; Igt: 35mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: IPAK
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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STM32F378VCT6 stm32f378cc.pdf
STM32F378VCT6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Case: LQFP100
Mounting: SMD
Family: STM32F3
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Supply voltage: 1.8V DC
Number of comparators: 2
Number of 12bit D/A converters: 3
Number of inputs/outputs: 83
Memory: 32kB SRAM; 256kB FLASH
Clock frequency: 72MHz
Kind of core: 32-bit
Type of integrated circuit: STM32 ARM microcontroller
Produkt ist nicht verfügbar
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STM32F746BGT6 en.DM00166116.pdf
STM32F746BGT6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; DCMI; FMC; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 320kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Produkt ist nicht verfügbar
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T410-600H en.CD00002383.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Mounting: THT
Gate current: 10mA
Type of thyristor: triac
Max. load current: 4A
Max. forward impulse current: 31A
Max. off-state voltage: 0.6kV
Case: IPAK
Kind of package: tube
Produkt ist nicht verfügbar
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T410-800T en.CD00002383.pdf
T410-800T
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 31A
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
84+0.85 EUR
85+0.84 EUR
Mindestbestellmenge: 54
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USB6B1 usb6b1.pdf
USB6B1
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 40A; 500W; unidirectional; SO8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Leakage current: 10µA
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Produkt ist nicht verfügbar
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STGW30NC60VD en.CD00152202.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STPS340S stps340.pdf
STPS340S
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMC
Max. forward voltage: 0.52V
Max. forward impulse current: 75A
Max. load current: 6A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
275+0.26 EUR
311+0.23 EUR
435+0.16 EUR
486+0.15 EUR
527+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 193
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STTH1212D STTH1212D-DTE.pdf
STTH1212D
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 100A; TO220AC; 50ns
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 12A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 100A
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
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STGF19NC60KD en.CD00196439.pdf
STGF19NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 55nC
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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SMBJ12CA-TR cd00001366.pdf
SMBJ12CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14V; 31A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 1666 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
535+0.13 EUR
577+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 358
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STGIB10CH60S-XZ
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 66W
Output current: 10A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2B-26L
Produkt ist nicht verfügbar
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STGIB10CH60TS-XZ
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 66W
Output current: 10A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2B-26L
Produkt ist nicht verfügbar
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STPS1045D description STPS1045D.pdf
STPS1045D
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.23...1.32mm
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
164+0.44 EUR
167+0.43 EUR
Mindestbestellmenge: 136
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STISO620TR stiso620.pdf
Hersteller: STMicroelectronics
Category: Unclassified
Description: STISO620TR
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.41 EUR
Mindestbestellmenge: 2500
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STGP3NC120HD pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEED9389163FE0C7&compId=STGx3NC120HD.pdf?ci_sign=28d109c69ddf7046490206a96c3a4aab61477cc0
STGP3NC120HD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
47+1.53 EUR
50+1.47 EUR
Mindestbestellmenge: 36
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SCTW35N65G2V sctw35n65g2v.pdf
SCTW35N65G2V
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 240W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 73nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.47 EUR
6+12.71 EUR
30+11.54 EUR
Mindestbestellmenge: 5
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STM32F303VET7 stm32f303rd.pdf
STM32F303VET7
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 86
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 80kB SRAM; 512kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Kind of core: 32-bit
Produkt ist nicht verfügbar
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2STF2360 2stf2360.pdf
2STF2360
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 1.4W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1.4W
Case: SOT89
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1768 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
135+0.53 EUR
158+0.45 EUR
231+0.31 EUR
268+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 99
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ESDCAN05-2BWY esdcan05-2bwy.pdf
ESDCAN05-2BWY
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 39V; 3A; 170W; bidirectional,double; SOT323-3L
Type of diode: TVS array
Breakdown voltage: 39V
Max. forward impulse current: 3A
Peak pulse power dissipation: 170W
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT323-3L
Max. off-state voltage: 36V
Leakage current: 0.1µA
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry; CAN
Version: ESD
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
305+0.23 EUR
348+0.21 EUR
468+0.15 EUR
527+0.14 EUR
610+0.12 EUR
667+0.11 EUR
Mindestbestellmenge: 239
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BTB24-600BWRG BTx2x.pdf
BTB24-600BWRG
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Produkt ist nicht verfügbar
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STPS3L60S stps3l60s.pdf
STPS3L60S
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 75A
Kind of package: reel; tape
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
106+0.67 EUR
Mindestbestellmenge: 106
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STPS3L60Q en.CD00002286.pdf
STPS3L60Q
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO15; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO15
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: Ammo Pack
Leakage current: 30mA
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
127+0.56 EUR
Mindestbestellmenge: 127
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PD57018S-E en.CD00098308.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Produkt ist nicht verfügbar
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PD57018STR-E en.CD00098308.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Produkt ist nicht verfügbar
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PD57018TR-E en.CD00098308.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Produkt ist nicht verfügbar
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STGP10H60DF en.DM00092752.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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VNB35NV04TR-E vnb35nv04-e.pdf
VNB35NV04TR-E
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 30A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 30A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 13mΩ
Output voltage: 36V
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.05 EUR
18+4.15 EUR
25+3.73 EUR
50+3.47 EUR
Mindestbestellmenge: 12
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ULN2801A ULN2802A.pdf
ULN2801A
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Output current: 0.5A
Output voltage: 50V
Number of channels: 8
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load; PMOS/CMOS
Input voltage: 30V
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
23+3.13 EUR
24+2.99 EUR
40+2.85 EUR
100+2.66 EUR
Mindestbestellmenge: 18
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STW30N65M5 stw30n65m5.pdf
STW30N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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SMBJ6.5CA-TR cd00001366.pdf
SMBJ6.5CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.58V; 56A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.58V
Max. forward impulse current: 56A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
618+0.12 EUR
692+0.1 EUR
747+0.096 EUR
783+0.091 EUR
1000+0.082 EUR
2500+0.081 EUR
Mindestbestellmenge: 455
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STEVAL-ILL015V2 STEVAL-ILL015V2.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: LED2472G; 7.5÷18VDC; 700mA
Type of development kit: STM32
Kit contents: base board
Kind of connector: JTAG; pin strips; power supply; USB
Kind of integrated circuit: LED driver
Operating current: 0.7A
Operating voltage: 7.5...18V DC
Components: LED2472G
Interface: JTAG; USB
Produkt ist nicht verfügbar
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STM32303E-EVAL DM00127343.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32F303VET6; Architecture: Cortex M4
Type of development kit: STM32
Kind of connector: Jack 3,5mm; microSD; pin strips; RS232/RS485; USB
Kind of architecture: Cortex M4
Components: STM32F303VET6
Interface: CAN 2.0A/B; GPIO; I2C; I2S; JTAG; SPI x3; USART x5; USB
Produkt ist nicht verfügbar
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VNH5019ATR-E VNH5019A.pdf
VNH5019ATR-E
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; MultiPowerSO30; 30A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Case: MultiPowerSO30
Output current: 30A
Number of channels: 2
Mounting: SMD
On-state resistance: 18mΩ
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 20kHz
Kind of package: reel; tape
Supply voltage: 5.5...24V
auf Bestellung 1041 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.94 EUR
8+10.08 EUR
10+9.72 EUR
50+9.38 EUR
250+9.04 EUR
500+9.02 EUR
Mindestbestellmenge: 7
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STWA75N65DM6 stwa75n65dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STPS3045CT STPS3045.pdf
STPS3045CT
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.57V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.57V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 220A
Semiconductor structure: common cathode; double
Case: TO220AB
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
75+0.96 EUR
76+0.94 EUR
Mindestbestellmenge: 55
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STPS3045CGY-TR en.CD00268227.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 30A
Leakage current: 40mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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STPS3045DJF-TR en.CD00255681.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 45V; 30A
Type of diode: Schottky rectifying
Case: PowerFLAT 5x6
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. load current: 45A
Leakage current: 80mA
Max. forward impulse current: 380A
Kind of package: reel; tape
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STPS3045DJFY-TR en.DM00177331.pdf
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT 5x6; SMD; 45V; 30A
Type of diode: Schottky rectifying
Case: PowerFLAT 5x6
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. load current: 45A
Leakage current: 80mA
Max. forward impulse current: 380A
Kind of package: reel; tape
Application: automotive industry
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STM32F103T4U6A STM32F103C4T6A-DTE.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 6kB SRAM; 16kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
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STM32F103T6U6A STM32F103C4T6A-DTE.pdf
STM32F103T6U6A
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; VFQFPN36; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F1
Supply voltage: 2...3.6V DC
Number of 16bit timers: 3
Number of inputs/outputs: 26
Memory: 10kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; USB
Kind of architecture: Cortex M3
Case: VFQFPN36
Mounting: SMD
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STM32G4A1KEU6 stm32g4a1ce.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; UFQFPN32; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x2; I2C x3; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 112kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 11
Number of 12bit D/A converters: 4
Number of 16bit timers: 11
Number of 32bit timers: 1
Family: STM32G4
Kind of package: in-tray
Kind of core: 32-bit
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T835T-8T T835T-8T.pdf
T835T-8T
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
77+0.93 EUR
89+0.81 EUR
99+0.73 EUR
109+0.66 EUR
Mindestbestellmenge: 53
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T835T-6I en.CD00246420.pdf
T835T-6I
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220ABIns; Igt: 35mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 63A
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
69+1.05 EUR
81+0.89 EUR
91+0.79 EUR
102+0.71 EUR
Mindestbestellmenge: 44
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T835T-8G en.DM00492889.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 84A
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T835T-8G-TR t835t-8g.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 35mA; Ifsm: 84A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 84A
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T810-600G-TR t810.pdf
T810-600G-TR
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; logic level
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Features of semiconductor devices: logic level
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
79+0.91 EUR
110+0.65 EUR
250+0.55 EUR
500+0.54 EUR
Mindestbestellmenge: 58
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T810-600B t810.pdf
T810-600B
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 15mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 15mA
Mounting: SMD
Kind of package: tube
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
Mindestbestellmenge: 112
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T810-600B-TR t810.pdf
T810-600B-TR
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
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STB100N10F7 std100n10f7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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LM2904WHDT lm2904wh.pdf
LM2904WHDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 0.6V/μs
Integrated circuit features: low power
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
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