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STD30N10F7 STD30N10F7 STMicroelectronics en.DM00101600.pdf Description: MOSFET N-CH 100V 32A DPAK
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar
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STD45N10F7 STD45N10F7 STMicroelectronics en.DM00081278.pdf Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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2500+1.07 EUR
5000+1 EUR
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STD7NM64N STD7NM64N STMicroelectronics en.DM00092032.pdf Description: MOSFET N-CH 640V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 640 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD80N10F7 STD80N10F7 STMicroelectronics en.DM00106219.pdf Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
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STH140N8F7-2 STH140N8F7-2 STMicroelectronics en.DM00130458.pdf Description: MOSFET N-CH 80V 90A H2PAK-2
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Produkt ist nicht verfügbar
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STH360N4F6-2 STH360N4F6-2 STMicroelectronics en.DM00059364.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
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STH400N4F6-2 STH400N4F6-2 STMicroelectronics en.DM00060004.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
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STH400N4F6-6 STH400N4F6-6 STMicroelectronics en.DM00060004.pdf Description: MOSFET N-CH 40V 180A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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STL19N65M5 STL19N65M5 STMicroelectronics Description: MOSFET N-CH 650V 12.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL2N80K5 STL2N80K5 STMicroelectronics en.DM00092662.pdf Description: MOSFET N-CH 800V 2A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
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3000+0.79 EUR
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STL30N10F7 STL30N10F7 STMicroelectronics en.DM00098053.pdf Description: MOSFET N-CH 100V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
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STL31N65M5 STL31N65M5 STMicroelectronics en.DM00098856.pdf Description: MOSFET N-CH 650V 15A PWRFLAT88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
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STL34N65M5 STL34N65M5 STMicroelectronics en.DM00057661.pdf Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Produkt ist nicht verfügbar
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STS7N3LLH6 STMicroelectronics Description: MOSFET N-CH 30V 17A 8SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STF10N95K5 STF10N95K5 STMicroelectronics en.DM00088506.pdf Description: MOSFET N-CH 950V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 992 Stücke:
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4+6.51 EUR
50+3.28 EUR
100+2.98 EUR
500+2.43 EUR
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STF12NM65 STF12NM65 STMicroelectronics Description: MOSFET N-CH 650V TO220FP
Part Status: Active
Supplier Device Package: TO-220FP
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF25N10F7 STF25N10F7 STMicroelectronics en.DM00095573.pdf Description: MOSFET N-CH 100V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF30N10F7 STF30N10F7 STMicroelectronics en.DM00101600.pdf Description: MOSFET N-CH 100V 24A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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10+3.27 EUR
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STF45N10F7 STF45N10F7 STMicroelectronics dm00071586-1797676.pdf Description: MOSFET N-CH 100V 30A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF6N68K3 STF6N68K3 STMicroelectronics Description: MOSFET N-CH 680V TO-220FP
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STF80N10F7 STF80N10F7 STMicroelectronics en.DM00106219.pdf Description: MOSFET N-CH 100V 40A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Produkt ist nicht verfügbar
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STFI13N80K5 STFI13N80K5 STMicroelectronics STFI13N80K5.pdf Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STFI20NM65N STFI20NM65N STMicroelectronics en.DM00103790.pdf Description: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
Produkt ist nicht verfügbar
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STFI7N80K5 STFI7N80K5 STMicroelectronics STF%28I%297N80K5.pdf Description: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar
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STI360N4F6 STI360N4F6 STMicroelectronics DM00059344.pdf Description: MOSFET N-CH 40V 120A I2PAK
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STI400N4F6 STI400N4F6 STMicroelectronics en.DM00060059.pdf Description: MOSFET N-CH 40V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 377 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.84 EUR
50+7.79 EUR
100+6.68 EUR
500+5.94 EUR
1000+5.08 EUR
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STI45N10F7 STI45N10F7 STMicroelectronics en.DM00081278.pdf Description: MOSFET N-CH 100V 45A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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STP10N95K5 STP10N95K5 STMicroelectronics en.DM00088506.pdf Description: MOSFET N-CH 950V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 837 Stücke:
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STP120N10F4 STP120N10F4 STMicroelectronics en.DM00112520.pdf Description: MOSFET N-CH 100V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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STP140N8F7 STP140N8F7 STMicroelectronics en.DM00130467.pdf Description: MOSFET N-CH 80V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
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STP150N10F7 STP150N10F7 STMicroelectronics en.DM00082643.pdf Description: MOSFET N-CH 100V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
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STP24N60DM2 STP24N60DM2 STMicroelectronics en.DM00099972.pdf Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
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STP25N10F7 STP25N10F7 STMicroelectronics en.DM00095573.pdf Description: MOSFET N-CH 100V 25A TO220
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP45N10F7 STP45N10F7 STMicroelectronics en.DM00081278.pdf Description: MOSFET N-CH 100V 45A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 566 Stücke:
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STP80N10F7 STP80N10F7 STMicroelectronics en.DM00106219.pdf Description: MOSFET N-CH 100V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STU4N80K5 STU4N80K5 STMicroelectronics en.DM00092669.pdf Description: MOSFET N-CH 800V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
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STW10N95K5 STW10N95K5 STMicroelectronics en.DM00088506.pdf Description: MOSFET N-CH 950V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 379 Stücke:
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3+9.13 EUR
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STW13N80K5 STW13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STW22N95K5 STW22N95K5 STMicroelectronics en.DM00092786.pdf Description: MOSFET N-CH 950V 17.5A TO247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 950 V
auf Bestellung 459 Stücke:
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STW23N85K5 STW23N85K5 STMicroelectronics en.DM00062129.pdf Description: MOSFET N-CH 850V 19A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 275mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STW24N60DM2 STW24N60DM2 STMicroelectronics en.DM00099972.pdf Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 678 Stücke:
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3+8.4 EUR
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120+3.82 EUR
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STWA20N95K5 STWA20N95K5 STMicroelectronics en.DM00101015.pdf Description: MOSFET N-CH 950V 17.5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 286 Stücke:
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2+14.3 EUR
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STD127DT4 STD127DT4 STMicroelectronics en.DM00100702.pdf Description: TRANS NPN 400V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 35 W
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STGD6NC60H-1 STGD6NC60H-1 STMicroelectronics en.DM00096283.pdf Description: IGBT 600V 15A TO-251
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 13.6 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 20µJ (on), 68µJ (off)
Td (on/off) @ 25°C: 12ns/76ns
Supplier Device Package: TO-251 (IPAK)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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STGP30H65F STMicroelectronics Description: IGBT TRENCH FS 650V 60A TO-220
Power - Max: 260 W
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 105 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 50ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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STGW28IH125DF STGW28IH125DF STMicroelectronics en.DM00095615.pdf Description: IGBT 1250V 60A 375W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/128ns
Switching Energy: 720µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
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STGWT28IH125DF STGWT28IH125DF STMicroelectronics en.DM00095615.pdf Description: IGBT TRENCH FS 1250V 60A TO-3P
Power - Max: 375 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 114 nC
Test Condition: 600V, 25A, 10Ohm, 15V
Switching Energy: 720µJ (off)
Td (on/off) @ 25°C: -/128ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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STGWT80V60DF STGWT80V60DF STMicroelectronics en.DM00079438.pdf Description: IGBT 600V 120A 469W TO-3P
Power - Max: 469 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 448 nC
Test Condition: 400V, 80A, 5Ohm, 15V
Switching Energy: 1.8mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 60ns/220ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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STGY80H65DFB STGY80H65DFB STMicroelectronics STGx%28x%2980H65DFB_Rev6_May2015.pdf Description: IGBT TRENCH FS 650V 120A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: MAX247™
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
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LET9180 LET9180 STMicroelectronics DM00086330.pdf Description: IC RF TRANSISTOR LDMOS M246
auf Bestellung 55 Stücke:
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TDA7706CB TDA7706CB STMicroelectronics en.DM00049953.pdf Description: IC TUNER AM/FM HD INTERFC 64LQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
RF Type: AM, FM
Function: Tuner
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
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STM32052B-EVAL STMicroelectronics Description: STM32F052 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: STM32F052
Part Status: Active
Produkt ist nicht verfügbar
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STM3210G-SK/KEI STMicroelectronics Description: STM32F10X EVAL BRD
Utilized IC / Part: STM32F10x
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD, ULINK-ME™ Programmer
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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STM32F052B-DISCO STMicroelectronics Description: DISCOVERY STM32F052 EVAL BRD
Part Status: Obsolete
Platform: Discovery
Utilized IC / Part: STM32F052
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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STEVAL-VNH5019A STEVAL-VNH5019A STMicroelectronics en.DM00091047.pdf Description: EVAL BOARD FOR VNH5019A
Part Status: Active
Embedded: Yes, MCU, 8-Bit
Primary Attributes: Single-H-Bridge Driver
Supplied Contents: Board(s)
Utilized IC / Part: VNH5019A
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-VNH5050A STEVAL-VNH5050A STMicroelectronics en.DM00091072.pdf Description: BOARD EVALUATION VNH5050A
Part Status: Active
Embedded: Yes, MCU, 8-Bit
Primary Attributes: Single-H-Bridge Driver
Supplied Contents: Board(s)
Utilized IC / Part: VNH5050A
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Produkt ist nicht verfügbar
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STEVAL-VNH5180A STEVAL-VNH5180A STMicroelectronics en.CD00264619.pdf Description: EVAL BOARD FOR VNH5180A
Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Primary Attributes: Single-H-Bridge Driver
Supplied Contents: Board(s)
Utilized IC / Part: VNH5180A
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Produkt ist nicht verfügbar
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L9915 STMicroelectronics Description: IC IGBT SMART PWR DRIVER
Produkt ist nicht verfügbar
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VBG08H-E STMicroelectronics VBG08H-E.pdf Description: IC PWR DRIVER 1:1 OCTAPAK
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: OctaPAK 7+1
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 40V
Input Type: Non-Inverting
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: OctaPAK (7 leads + Tab)
Features: Status Flag
Packaging: Tube
Produkt ist nicht verfügbar
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SPC560P44L3BEAAR SPC560P44L3BEAAR STMicroelectronics en.CD00197566.pdf Description: IC MCU 32BIT 384KB FLASH 100LQFP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 67
Grade: Automotive
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x10b
Core Processor: e200z0h
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 36K x 8
Program Memory Size: 384KB (384K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD30N10F7 en.DM00101600.pdf
STD30N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 32A DPAK
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar
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STD45N10F7 en.DM00081278.pdf
STD45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
2500+1.07 EUR
5000+1 EUR
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STD7NM64N en.DM00092032.pdf
STD7NM64N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 640V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 640 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD80N10F7 en.DM00106219.pdf
STD80N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
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2500+1.09 EUR
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STH140N8F7-2 en.DM00130458.pdf
STH140N8F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Produkt ist nicht verfügbar
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STH360N4F6-2 en.DM00059364.pdf
STH360N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Produkt ist nicht verfügbar
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STH400N4F6-2 en.DM00060004.pdf
STH400N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Produkt ist nicht verfügbar
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STH400N4F6-6 en.DM00060004.pdf
STH400N4F6-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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STL19N65M5
STL19N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL2N80K5 en.DM00092662.pdf
STL2N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
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3000+0.79 EUR
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STL30N10F7 en.DM00098053.pdf
STL30N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
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STL31N65M5 en.DM00098856.pdf
STL31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
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STL34N65M5 en.DM00057661.pdf
STL34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Produkt ist nicht verfügbar
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STS7N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 17A 8SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STF10N95K5 en.DM00088506.pdf
STF10N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
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4+6.51 EUR
50+3.28 EUR
100+2.98 EUR
500+2.43 EUR
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STF12NM65
STF12NM65
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V TO220FP
Part Status: Active
Supplier Device Package: TO-220FP
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF25N10F7 en.DM00095573.pdf
STF25N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF30N10F7 en.DM00101600.pdf
STF30N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 24A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 93 Stücke:
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AnzahlPrivatkunde
6+3.64 EUR
10+3.27 EUR
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STF45N10F7 dm00071586-1797676.pdf
STF45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 30A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STF6N68K3
STF6N68K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 680V TO-220FP
Produkt ist nicht verfügbar
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STF80N10F7 en.DM00106219.pdf
STF80N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 40A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Produkt ist nicht verfügbar
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STFI13N80K5 STFI13N80K5.pdf
STFI13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STFI20NM65N en.DM00103790.pdf
STFI20NM65N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
Produkt ist nicht verfügbar
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STFI7N80K5 STF%28I%297N80K5.pdf
STFI7N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar
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STI360N4F6 DM00059344.pdf
STI360N4F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A I2PAK
auf Bestellung 1000 Stücke:
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STI400N4F6 en.DM00060059.pdf
STI400N4F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 377 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.84 EUR
50+7.79 EUR
100+6.68 EUR
500+5.94 EUR
1000+5.08 EUR
Mindestbestellmenge: 3 Stücke
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STI45N10F7 en.DM00081278.pdf
STI45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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STP10N95K5 en.DM00088506.pdf
STP10N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 837 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.91 EUR
50+4.03 EUR
100+3.67 EUR
500+3.01 EUR
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STP120N10F4 en.DM00112520.pdf
STP120N10F4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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STP140N8F7 en.DM00130467.pdf
STP140N8F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
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STP150N10F7 en.DM00082643.pdf
STP150N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
auf Bestellung 1148 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.1 EUR
50+3.59 EUR
100+3.25 EUR
500+2.65 EUR
1000+2.46 EUR
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STP24N60DM2 en.DM00099972.pdf
STP24N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.64 EUR
50+3.89 EUR
100+3.53 EUR
500+2.89 EUR
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STP25N10F7 en.DM00095573.pdf
STP25N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A TO220
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP45N10F7 en.DM00081278.pdf
STP45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.77 EUR
50+1.82 EUR
100+1.63 EUR
500+1.3 EUR
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STP80N10F7 en.DM00106219.pdf
STP80N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STU4N80K5 en.DM00092669.pdf
STU4N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Produkt ist nicht verfügbar
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STW10N95K5 en.DM00088506.pdf
STW10N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.13 EUR
30+5.08 EUR
120+4.19 EUR
Mindestbestellmenge: 3 Stücke
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STW13N80K5 en.DM00079143.pdf
STW13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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STW22N95K5 en.DM00092786.pdf
STW22N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 950 V
auf Bestellung 459 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.64 EUR
30+10.33 EUR
120+8.72 EUR
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STW23N85K5 en.DM00062129.pdf
STW23N85K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 850V 19A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 275mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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STW24N60DM2 en.DM00099972.pdf
STW24N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.4 EUR
30+4.65 EUR
120+3.82 EUR
510+3.21 EUR
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STWA20N95K5 en.DM00101015.pdf
STWA20N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.3 EUR
30+8.29 EUR
120+6.97 EUR
Mindestbestellmenge: 2 Stücke
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STD127DT4 en.DM00100702.pdf
STD127DT4
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 35 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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STGD6NC60H-1 en.DM00096283.pdf
STGD6NC60H-1
Hersteller: STMicroelectronics
Description: IGBT 600V 15A TO-251
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 13.6 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 20µJ (on), 68µJ (off)
Td (on/off) @ 25°C: 12ns/76ns
Supplier Device Package: TO-251 (IPAK)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1874 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.28 EUR
75+1.48 EUR
150+1.32 EUR
525+1.11 EUR
1050+1.01 EUR
Mindestbestellmenge: 7 Stücke
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STGP30H65F
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO-220
Power - Max: 260 W
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 105 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 50ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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STGW28IH125DF en.DM00095615.pdf
STGW28IH125DF
Hersteller: STMicroelectronics
Description: IGBT 1250V 60A 375W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/128ns
Switching Energy: 720µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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STGWT28IH125DF en.DM00095615.pdf
STGWT28IH125DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1250V 60A TO-3P
Power - Max: 375 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 114 nC
Test Condition: 600V, 25A, 10Ohm, 15V
Switching Energy: 720µJ (off)
Td (on/off) @ 25°C: -/128ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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STGWT80V60DF en.DM00079438.pdf
STGWT80V60DF
Hersteller: STMicroelectronics
Description: IGBT 600V 120A 469W TO-3P
Power - Max: 469 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 448 nC
Test Condition: 400V, 80A, 5Ohm, 15V
Switching Energy: 1.8mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 60ns/220ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 1 Stücke:
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STGY80H65DFB STGx%28x%2980H65DFB_Rev6_May2015.pdf
STGY80H65DFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: MAX247™
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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LET9180 DM00086330.pdf
LET9180
Hersteller: STMicroelectronics
Description: IC RF TRANSISTOR LDMOS M246
auf Bestellung 55 Stücke:
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TDA7706CB en.DM00049953.pdf
TDA7706CB
Hersteller: STMicroelectronics
Description: IC TUNER AM/FM HD INTERFC 64LQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
RF Type: AM, FM
Function: Tuner
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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STM32052B-EVAL
Hersteller: STMicroelectronics
Description: STM32F052 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: STM32F052
Part Status: Active
Produkt ist nicht verfügbar
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STM3210G-SK/KEI
Hersteller: STMicroelectronics
Description: STM32F10X EVAL BRD
Utilized IC / Part: STM32F10x
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD, ULINK-ME™ Programmer
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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STM32F052B-DISCO
Hersteller: STMicroelectronics
Description: DISCOVERY STM32F052 EVAL BRD
Part Status: Obsolete
Platform: Discovery
Utilized IC / Part: STM32F052
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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STEVAL-VNH5019A en.DM00091047.pdf
STEVAL-VNH5019A
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VNH5019A
Part Status: Active
Embedded: Yes, MCU, 8-Bit
Primary Attributes: Single-H-Bridge Driver
Supplied Contents: Board(s)
Utilized IC / Part: VNH5019A
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-VNH5050A en.DM00091072.pdf
STEVAL-VNH5050A
Hersteller: STMicroelectronics
Description: BOARD EVALUATION VNH5050A
Part Status: Active
Embedded: Yes, MCU, 8-Bit
Primary Attributes: Single-H-Bridge Driver
Supplied Contents: Board(s)
Utilized IC / Part: VNH5050A
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Produkt ist nicht verfügbar
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STEVAL-VNH5180A en.CD00264619.pdf
STEVAL-VNH5180A
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VNH5180A
Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Primary Attributes: Single-H-Bridge Driver
Supplied Contents: Board(s)
Utilized IC / Part: VNH5180A
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Produkt ist nicht verfügbar
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L9915
Hersteller: STMicroelectronics
Description: IC IGBT SMART PWR DRIVER
Produkt ist nicht verfügbar
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VBG08H-E VBG08H-E.pdf
Hersteller: STMicroelectronics
Description: IC PWR DRIVER 1:1 OCTAPAK
Fault Protection: Over Temperature, Over Voltage
Supplier Device Package: OctaPAK 7+1
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 40V
Input Type: Non-Inverting
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: OctaPAK (7 leads + Tab)
Features: Status Flag
Packaging: Tube
Produkt ist nicht verfügbar
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SPC560P44L3BEAAR en.CD00197566.pdf
SPC560P44L3BEAAR
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 384KB FLASH 100LQFP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 67
Grade: Automotive
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x10b
Core Processor: e200z0h
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 36K x 8
Program Memory Size: 384KB (384K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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