Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (129414) > Seite 367 nach 2157

Wählen Sie Seite:   [  << Vorherige Seite ]  1 215 362 363 364 365 366 367 368 369 370 371 372 430 645 860 1075 1290 1505 1720 1935 2150 2157  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SMP2300SCMC SMP2300SCMC STMicroelectronics en.sgprot0716_web.pdf Description: THYRISTOR 230V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 230V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMP2600SCMC SMP2600SCMC STMicroelectronics en.sgprot0716_web.pdf Description: THYRISTOR 260V 400A DO-214AA
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3 V
Voltage - Off State: 260V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Tape & Reel (TR)
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDAVLC8-1BT2Y ESDAVLC8-1BT2Y STMicroelectronics en.DM00100899.pdf Description: TVS DIODE 3VWM SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 4.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB100N10F7 STB100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N-CH 100V 80A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB120N10F4 STB120N10F4 STMicroelectronics en.DM00112520.pdf Description: MOSFET N-CH 100V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB6N65K3 STMicroelectronics Description: MOSFET N-CH 650V DPAK
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD25N10F7 STD25N10F7 STMicroelectronics en.DM00095573.pdf Description: MOSFET N-CH 100V 25A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.71 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD30N10F7 STD30N10F7 STMicroelectronics en.DM00101600.pdf Description: MOSFET N-CH 100V 32A DPAK
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD45N10F7 STD45N10F7 STMicroelectronics en.DM00081278.pdf Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.9 EUR
5000+0.84 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM64N STD7NM64N STMicroelectronics en.DM00092032.pdf Description: MOSFET N-CH 640V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 640 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD80N10F7 STD80N10F7 STMicroelectronics en.DM00106219.pdf Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.92 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STH140N8F7-2 STH140N8F7-2 STMicroelectronics en.DM00130458.pdf Description: MOSFET N-CH 80V 90A H2PAK-2
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH360N4F6-2 STH360N4F6-2 STMicroelectronics en.DM00059364.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH400N4F6-2 STH400N4F6-2 STMicroelectronics en.DM00060004.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH400N4F6-6 STH400N4F6-6 STMicroelectronics en.DM00060004.pdf Description: MOSFET N-CH 40V 180A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL19N65M5 STL19N65M5 STMicroelectronics Description: MOSFET N-CH 650V 12.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL2N80K5 STL2N80K5 STMicroelectronics en.DM00092662.pdf Description: MOSFET N-CH 800V 2A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
STL30N10F7 STL30N10F7 STMicroelectronics en.DM00098053.pdf Description: MOSFET N-CH 100V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
STL31N65M5 STL31N65M5 STMicroelectronics en.DM00098856.pdf Description: MOSFET N-CH 650V 15A PWRFLAT88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL34N65M5 STL34N65M5 STMicroelectronics en.DM00057661.pdf Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STS7N3LLH6 STMicroelectronics Description: MOSFET N-CH 30V 17A 8SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF10N95K5 STF10N95K5 STMicroelectronics en.DM00088506.pdf Description: MOSFET N-CH 950V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.47 EUR
50+2.76 EUR
100+2.5 EUR
500+2.04 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STF12NM65 STF12NM65 STMicroelectronics Description: MOSFET N-CH 650V TO220FP
Part Status: Active
Supplier Device Package: TO-220FP
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF25N10F7 STF25N10F7 STMicroelectronics en.DM00095573.pdf Description: MOSFET N-CH 100V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF30N10F7 STF30N10F7 STMicroelectronics en.DM00101600.pdf Description: MOSFET N-CH 100V 24A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+2.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STF45N10F7 STF45N10F7 STMicroelectronics dm00071586-1797676.pdf Description: MOSFET N-CH 100V 30A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF6N68K3 STF6N68K3 STMicroelectronics Description: MOSFET N-CH 680V TO-220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF80N10F7 STF80N10F7 STMicroelectronics en.DM00106219.pdf Description: MOSFET N-CH 100V 40A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI13N80K5 STFI13N80K5 STMicroelectronics STFI13N80K5.pdf Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI20NM65N STFI20NM65N STMicroelectronics en.DM00103790.pdf Description: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI7N80K5 STFI7N80K5 STMicroelectronics STF%28I%297N80K5.pdf Description: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STI360N4F6 STI360N4F6 STMicroelectronics DM00059344.pdf Description: MOSFET N-CH 40V 120A I2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STI400N4F6 STI400N4F6 STMicroelectronics en.DM00060059.pdf Description: MOSFET N-CH 40V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 377 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.27 EUR
50+6.55 EUR
100+5.61 EUR
500+4.99 EUR
1000+4.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STI45N10F7 STI45N10F7 STMicroelectronics en.DM00081278.pdf Description: MOSFET N-CH 100V 45A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP10N95K5 STP10N95K5 STMicroelectronics en.DM00088506.pdf Description: MOSFET N-CH 950V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.6 EUR
50+3.37 EUR
100+3.05 EUR
500+2.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP120N10F4 STP120N10F4 STMicroelectronics en.DM00112520.pdf Description: MOSFET N-CH 100V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP140N8F7 STP140N8F7 STMicroelectronics en.DM00130467.pdf Description: MOSFET N-CH 80V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STP150N10F7 STP150N10F7 STMicroelectronics en.DM00082643.pdf Description: MOSFET N-CH 100V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
auf Bestellung 1148 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
50+3.02 EUR
100+2.73 EUR
500+2.23 EUR
1000+2.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP24N60DM2 STP24N60DM2 STMicroelectronics en.DM00099972.pdf Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.37 EUR
50+3.25 EUR
100+2.94 EUR
500+2.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP25N10F7 STP25N10F7 STMicroelectronics en.DM00095573.pdf Description: MOSFET N-CH 100V 25A TO220
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP45N10F7 STP45N10F7 STMicroelectronics en.DM00081278.pdf Description: MOSFET N-CH 100V 45A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
500+1.09 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STP80N10F7 STP80N10F7 STMicroelectronics en.DM00106219.pdf Description: MOSFET N-CH 100V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STU4N80K5 STU4N80K5 STMicroelectronics en.DM00092669.pdf Description: MOSFET N-CH 800V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW10N95K5 STW10N95K5 STMicroelectronics en.DM00088506.pdf Description: MOSFET N-CH 950V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.67 EUR
30+4.27 EUR
120+3.52 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STW13N80K5 STW13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW22N95K5 STW22N95K5 STMicroelectronics en.DM00092786.pdf Description: MOSFET N-CH 950V 17.5A TO247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 950 V
auf Bestellung 459 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.82 EUR
30+8.68 EUR
120+7.33 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STW23N85K5 STW23N85K5 STMicroelectronics en.DM00062129.pdf Description: MOSFET N-CH 850V 19A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 275mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW24N60DM2 STW24N60DM2 STMicroelectronics en.DM00099972.pdf Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
3+7 EUR
30+3.88 EUR
120+3.19 EUR
510+2.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STWA20N95K5 STWA20N95K5 STMicroelectronics en.DM00101015.pdf Description: MOSFET N-CH 950V 17.5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.02 EUR
30+6.97 EUR
120+5.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STD127DT4 STD127DT4 STMicroelectronics en.DM00100702.pdf Description: TRANS NPN 400V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 35 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGD6NC60H-1 STGD6NC60H-1 STMicroelectronics en.DM00096283.pdf Description: IGBT 600V 15A TO-251
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 13.6 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 20µJ (on), 68µJ (off)
Td (on/off) @ 25°C: 12ns/76ns
Supplier Device Package: TO-251 (IPAK)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1874 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.76 EUR
75+1.24 EUR
150+1.11 EUR
525+0.93 EUR
1050+0.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STGP30H65F STGP30H65F STMicroelectronics en.DM00102085.pdf Description: IGBT 650V 60A 260W TO-220AB
Power - Max: 260 W
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 105 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 50ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGW28IH125DF STGW28IH125DF STMicroelectronics en.DM00095615.pdf Description: IGBT 1250V 60A 375W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/128ns
Switching Energy: 720µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGWT28IH125DF STGWT28IH125DF STMicroelectronics en.DM00095615.pdf Description: IGBT TRENCH FS 1250V 60A TO-3P
Power - Max: 375 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 114 nC
Test Condition: 600V, 25A, 10Ohm, 15V
Switching Energy: 720µJ (off)
Td (on/off) @ 25°C: -/128ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGWT80V60DF STGWT80V60DF STMicroelectronics en.DM00079438.pdf Description: IGBT 600V 120A 469W TO-3P
Power - Max: 469 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 448 nC
Test Condition: 400V, 80A, 5Ohm, 15V
Switching Energy: 1.8mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 60ns/220ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STGY80H65DFB STGY80H65DFB STMicroelectronics STGx%28x%2980H65DFB_Rev6_May2015.pdf Description: IGBT TRENCH FS 650V 120A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: MAX247™
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LET9180 LET9180 STMicroelectronics DM00086330.pdf Description: IC RF TRANSISTOR LDMOS M246
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TDA7706CB TDA7706CB STMicroelectronics en.DM00049953.pdf Description: IC TUNER AM/FM HD INTERFC 64LQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
RF Type: AM, FM
Function: Tuner
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STM32052B-EVAL STMicroelectronics Description: STM32F052 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: STM32F052
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STM3210G-SK/KEI STMicroelectronics Description: STM32F10X EVAL BRD
Utilized IC / Part: STM32F10x
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD, ULINK-ME™ Programmer
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMP2300SCMC en.sgprot0716_web.pdf
SMP2300SCMC
Hersteller: STMicroelectronics
Description: THYRISTOR 230V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 45pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 230V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMP2600SCMC en.sgprot0716_web.pdf
SMP2600SCMC
Hersteller: STMicroelectronics
Description: THYRISTOR 260V 400A DO-214AA
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 3 V
Voltage - Off State: 260V
Voltage - Breakover: 300V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 40pF
Packaging: Tape & Reel (TR)
Current - Peak Pulse (8/20µs): 400 A
Current - Peak Pulse (10/1000µs): 100 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDAVLC8-1BT2Y en.DM00100899.pdf
ESDAVLC8-1BT2Y
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 4.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB100N10F7 en.DM00066568.pdf
STB100N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB120N10F4 en.DM00112520.pdf
STB120N10F4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STB6N65K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V DPAK
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD25N10F7 en.DM00095573.pdf
STD25N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.71 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD30N10F7 en.DM00101600.pdf
STD30N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 32A DPAK
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD45N10F7 en.DM00081278.pdf
STD45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.9 EUR
5000+0.84 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD7NM64N en.DM00092032.pdf
STD7NM64N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 640V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 640 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STD80N10F7 en.DM00106219.pdf
STD80N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.92 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STH140N8F7-2 en.DM00130458.pdf
STH140N8F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH360N4F6-2 en.DM00059364.pdf
STH360N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH400N4F6-2 en.DM00060004.pdf
STH400N4F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH400N4F6-6 en.DM00060004.pdf
STH400N4F6-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL19N65M5
STL19N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL2N80K5 en.DM00092662.pdf
STL2N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
STL30N10F7 en.DM00098053.pdf
STL30N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
STL31N65M5 en.DM00098856.pdf
STL31N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 11A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL34N65M5 en.DM00057661.pdf
STL34N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STS7N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 17A 8SOIC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF10N95K5 en.DM00088506.pdf
STF10N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
50+2.76 EUR
100+2.5 EUR
500+2.04 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STF12NM65
STF12NM65
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V TO220FP
Part Status: Active
Supplier Device Package: TO-220FP
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF25N10F7 en.DM00095573.pdf
STF25N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 19A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF30N10F7 en.DM00101600.pdf
STF30N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 24A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+2.75 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STF45N10F7 dm00071586-1797676.pdf
STF45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 30A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF6N68K3
STF6N68K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 680V TO-220FP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STF80N10F7 en.DM00106219.pdf
STF80N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 40A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI13N80K5 STFI13N80K5.pdf
STFI13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI20NM65N en.DM00103790.pdf
STFI20NM65N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STFI7N80K5 STF%28I%297N80K5.pdf
STFI7N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STI360N4F6 DM00059344.pdf
STI360N4F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A I2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STI400N4F6 en.DM00060059.pdf
STI400N4F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 377 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.27 EUR
50+6.55 EUR
100+5.61 EUR
500+4.99 EUR
1000+4.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STI45N10F7 en.DM00081278.pdf
STI45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP10N95K5 en.DM00088506.pdf
STP10N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
50+3.37 EUR
100+3.05 EUR
500+2.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP120N10F4 en.DM00112520.pdf
STP120N10F4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP140N8F7 en.DM00130467.pdf
STP140N8F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STP150N10F7 en.DM00082643.pdf
STP150N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
auf Bestellung 1148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
50+3.02 EUR
100+2.73 EUR
500+2.23 EUR
1000+2.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP24N60DM2 en.DM00099972.pdf
STP24N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
50+3.25 EUR
100+2.94 EUR
500+2.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP25N10F7 en.DM00095573.pdf
STP25N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A TO220
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STP45N10F7 en.DM00081278.pdf
STP45N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 45A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
500+1.09 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STP80N10F7 en.DM00106219.pdf
STP80N10F7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STU4N80K5 en.DM00092669.pdf
STU4N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW10N95K5 en.DM00088506.pdf
STW10N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.67 EUR
30+4.27 EUR
120+3.52 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STW13N80K5 en.DM00079143.pdf
STW13N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW22N95K5 en.DM00092786.pdf
STW22N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 950 V
auf Bestellung 459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.82 EUR
30+8.68 EUR
120+7.33 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STW23N85K5 en.DM00062129.pdf
STW23N85K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 850V 19A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 275mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW24N60DM2 en.DM00099972.pdf
STW24N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 100 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7 EUR
30+3.88 EUR
120+3.19 EUR
510+2.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STWA20N95K5 en.DM00101015.pdf
STWA20N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.02 EUR
30+6.97 EUR
120+5.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STD127DT4 en.DM00100702.pdf
STD127DT4
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 35 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGD6NC60H-1 en.DM00096283.pdf
STGD6NC60H-1
Hersteller: STMicroelectronics
Description: IGBT 600V 15A TO-251
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Gate Charge: 13.6 nC
Test Condition: 390V, 3A, 10Ohm, 15V
Switching Energy: 20µJ (on), 68µJ (off)
Td (on/off) @ 25°C: 12ns/76ns
Supplier Device Package: TO-251 (IPAK)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
75+1.24 EUR
150+1.11 EUR
525+0.93 EUR
1050+0.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STGP30H65F en.DM00102085.pdf
STGP30H65F
Hersteller: STMicroelectronics
Description: IGBT 650V 60A 260W TO-220AB
Power - Max: 260 W
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 105 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 50ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGW28IH125DF en.DM00095615.pdf
STGW28IH125DF
Hersteller: STMicroelectronics
Description: IGBT 1250V 60A 375W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/128ns
Switching Energy: 720µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGWT28IH125DF en.DM00095615.pdf
STGWT28IH125DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 1250V 60A TO-3P
Power - Max: 375 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 114 nC
Test Condition: 600V, 25A, 10Ohm, 15V
Switching Energy: 720µJ (off)
Td (on/off) @ 25°C: -/128ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STGWT80V60DF en.DM00079438.pdf
STGWT80V60DF
Hersteller: STMicroelectronics
Description: IGBT 600V 120A 469W TO-3P
Power - Max: 469 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 448 nC
Test Condition: 400V, 80A, 5Ohm, 15V
Switching Energy: 1.8mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 60ns/220ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STGY80H65DFB STGx%28x%2980H65DFB_Rev6_May2015.pdf
STGY80H65DFB
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: MAX247™
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 84ns/280ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 414 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 469 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LET9180 DM00086330.pdf
LET9180
Hersteller: STMicroelectronics
Description: IC RF TRANSISTOR LDMOS M246
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TDA7706CB en.DM00049953.pdf
TDA7706CB
Hersteller: STMicroelectronics
Description: IC TUNER AM/FM HD INTERFC 64LQFP
Part Status: Active
Supplier Device Package: 64-TQFP (10x10)
RF Type: AM, FM
Function: Tuner
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STM32052B-EVAL
Hersteller: STMicroelectronics
Description: STM32F052 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: STM32F052
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STM3210G-SK/KEI
Hersteller: STMicroelectronics
Description: STM32F10X EVAL BRD
Utilized IC / Part: STM32F10x
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD, ULINK-ME™ Programmer
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 215 362 363 364 365 366 367 368 369 370 371 372 430 645 860 1075 1290 1505 1720 1935 2150 2157  [ Nächste Seite >> ]