Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160470) > Seite 371 nach 2675
Foto | Bezeichnung | Hersteller | Beschreibung |
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LDFM50PT-TR | STMicroelectronics |
Description: IC REG LINEAR 5V 500MA PPAK Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: PPAK Voltage - Output (Min/Fixed): 5V Control Features: Enable, Power Good Part Status: Obsolete PSRR: 60dB ~ 52dB (120Hz ~ 100kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
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LDFMPT-TR | STMicroelectronics |
Description: IC REG LINEAR POS ADJ 500MA PPAK Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: PPAK Voltage - Output (Max): 12V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good Part Status: Obsolete PSRR: 62dB ~ 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
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LED2472GBTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 72MA 48TQFP Packaging: Cut Tape (CT) Package / Case: 48-TQFP Exposed Pad Voltage - Output: 19V Mounting Type: Surface Mount Number of Outputs: 24 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Signage Current - Output / Channel: 72mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 48-TQFP-EP (7x7) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 1671 Stücke: Lieferzeit 21-28 Tag (e) |
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STPSC6H12B-TR1 | STMicroelectronics |
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 330pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
auf Bestellung 7763 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH1512GY-TR | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 1429 Stücke: Lieferzeit 21-28 Tag (e) |
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ISO8200BTR | STMicroelectronics |
Description: IC PWR DRIVER 1:1 PWRSO36 Features: Auto Restart, Galvanic Isolation, Status Flag Packaging: Tape & Reel (TR) Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width) Mounting Type: Surface Mount Number of Outputs: 8 Interface: Parallel Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 120mOhm Voltage - Load: 10.5V ~ 36V Current - Output (Max): 700mA Ratio - Input:Output: 1:1 Supplier Device Package: PowerSO-36 Slug Up Fault Protection: Current Limiting (Fixed), Over Temperature |
auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
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L6395DTR | STMicroelectronics |
Description: IC GATE DRVR HALF-BRIDGE 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 75ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.9V Current - Peak Output (Source, Sink): 290mA, 430mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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LDFM50PT-TR | STMicroelectronics |
Description: IC REG LINEAR 5V 500MA PPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: PPAK Voltage - Output (Min/Fixed): 5V Control Features: Enable, Power Good Part Status: Obsolete PSRR: 60dB ~ 52dB (120Hz ~ 100kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
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LDFMPT-TR | STMicroelectronics |
Description: IC REG LINEAR POS ADJ 500MA PPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: PPAK Voltage - Output (Max): 12V Voltage - Output (Min/Fixed): 0.8V Control Features: Enable, Power Good Part Status: Obsolete PSRR: 62dB ~ 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
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LED2472GBTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 72MA 48TQFP Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Voltage - Output: 19V Mounting Type: Surface Mount Number of Outputs: 24 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Signage Current - Output / Channel: 72mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 48-TQFP-EP (7x7) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
Produkt ist nicht verfügbar |
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STPSC6H12B-TR1 | STMicroelectronics |
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 330pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH1512GY-TR | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH30R04DY | STMicroelectronics |
Description: DIODE GEN PURP 400V 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 790 Stücke: Lieferzeit 21-28 Tag (e) |
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SMP1100SCMC | STMicroelectronics |
Description: TVS DIODE 90V SMB Packaging: Tape & Reel (TR) Capacitance: 70pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Voltage - Breakover: 130V Voltage - Off State: 90V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 100 A |
Produkt ist nicht verfügbar |
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STB26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STD2N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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STD3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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STD5N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 3.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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STL24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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STPS3L45AF | STMicroelectronics |
Description: DIODE SCHOTTKY 45V 3A SMAFLAT Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMAflat Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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STF15N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
auf Bestellung 968 Stücke: Lieferzeit 21-28 Tag (e) |
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STF26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
Produkt ist nicht verfügbar |
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STF28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
auf Bestellung 418 Stücke: Lieferzeit 21-28 Tag (e) |
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STF2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
auf Bestellung 1977 Stücke: Lieferzeit 21-28 Tag (e) |
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STF2N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 2A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V |
auf Bestellung 2131 Stücke: Lieferzeit 21-28 Tag (e) |
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STF33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
auf Bestellung 962 Stücke: Lieferzeit 21-28 Tag (e) |
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STF3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V |
auf Bestellung 1218 Stücke: Lieferzeit 21-28 Tag (e) |
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STF5N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 3.7A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V |
auf Bestellung 1963 Stücke: Lieferzeit 21-28 Tag (e) |
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STF5N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 3.5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
auf Bestellung 963 Stücke: Lieferzeit 21-28 Tag (e) |
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STGF10H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 20A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 30 W |
auf Bestellung 43 Stücke: Lieferzeit 21-28 Tag (e) |
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STGF15H60DF | STMicroelectronics |
Description: IGBT 600V 30A 30W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24.5ns/118ns Switching Energy: 136µJ (on), 207µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 30 W |
auf Bestellung 606 Stücke: Lieferzeit 21-28 Tag (e) |
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STGP10H60DF | STMicroelectronics |
Description: IGBT 600V 20A 115W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
auf Bestellung 1930 Stücke: Lieferzeit 21-28 Tag (e) |
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STGP15H60DF | STMicroelectronics |
Description: IGBT 600V 30A 115W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24.5ns/118ns Switching Energy: 136µJ (on), 207µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 115 W |
auf Bestellung 999 Stücke: Lieferzeit 21-28 Tag (e) |
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STP15N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
auf Bestellung 1020 Stücke: Lieferzeit 21-28 Tag (e) |
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STP2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
auf Bestellung 1680 Stücke: Lieferzeit 21-28 Tag (e) |
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STP2N95K5 | STMicroelectronics | Description: MOSFET N-CH 950V 2A TO220 |
Produkt ist nicht verfügbar |
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STP33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
auf Bestellung 636 Stücke: Lieferzeit 21-28 Tag (e) |
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STP3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP5N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 3.7A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V |
auf Bestellung 34 Stücke: Lieferzeit 21-28 Tag (e) |
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STP5N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 3.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
auf Bestellung 876 Stücke: Lieferzeit 21-28 Tag (e) |
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STU2N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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STU3N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V |
auf Bestellung 87 Stücke: Lieferzeit 21-28 Tag (e) |
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STU5N60M2 | STMicroelectronics | Description: MOSFET N-CH 600V 3.7A IPAK |
auf Bestellung 851 Stücke: Lieferzeit 21-28 Tag (e) |
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STW15N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW26NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
auf Bestellung 696 Stücke: Lieferzeit 21-28 Tag (e) |
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STW70N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 68A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V |
auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) |
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LMV824AIYDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SO Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x4 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 800 µV Supplier Device Package: 14-SO Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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LMV824IYDT | STMicroelectronics |
Description: IC OPAMP GP 4 CIRCUIT 14SO Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 300µA (x4 Channels) Slew Rate: 1.9V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 3.5 mV Supplier Device Package: 14-SO Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 70 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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LD39130SJ10R | STMicroelectronics |
Description: IC REG LINEAR 1V 300MA 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 1V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Protection Features: Over Current, Over Temperature, Soft Start |
Produkt ist nicht verfügbar |
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LD39130SJ12R | STMicroelectronics |
Description: IC REG LIN 1.2V 300MA 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Protection Features: Over Current, Over Temperature, Soft Start |
auf Bestellung 8430 Stücke: Lieferzeit 21-28 Tag (e) |
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LD39130SJ18R | STMicroelectronics |
Description: IC REG LIN 1.8V 300MA 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Protection Features: Over Current, Over Temperature, Soft Start |
auf Bestellung 26224 Stücke: Lieferzeit 21-28 Tag (e) |
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LD39130SJ25R | STMicroelectronics |
Description: IC REG LIN 2.5V 300MA 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 300mA (Typ) Protection Features: Over Current, Over Temperature, Soft Start |
Produkt ist nicht verfügbar |
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LD39130SJ29R | STMicroelectronics |
Description: IC REG LIN 2.9V 300MA 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 2.9V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 300mA (Typ) Protection Features: Over Current, Over Temperature, Soft Start |
auf Bestellung 257 Stücke: Lieferzeit 21-28 Tag (e) |
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LD39130SJ30R | STMicroelectronics |
Description: IC REG LINEAR 3V 300MA 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-FlipChip (.69x.69) Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active PSRR: 70dB ~ 65dB (1kHz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 300mA (Typ) Protection Features: Over Current, Over Temperature, Soft Start |
auf Bestellung 17208 Stücke: Lieferzeit 21-28 Tag (e) |
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LDFM50PT-TR |
Hersteller: STMicroelectronics
Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
LDFMPT-TR |
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
LED2472GBTR |
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 1671 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.15 EUR |
10+ | 6.43 EUR |
25+ | 6.08 EUR |
100+ | 5.27 EUR |
250+ | 5 EUR |
500+ | 4.48 EUR |
1000+ | 3.78 EUR |
STPSC6H12B-TR1 |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 7763 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 8.24 EUR |
10+ | 6.91 EUR |
100+ | 5.59 EUR |
500+ | 4.97 EUR |
1000+ | 4.26 EUR |
STTH1512GY-TR |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1429 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.31 EUR |
10+ | 6.13 EUR |
100+ | 4.96 EUR |
500+ | 4.4 EUR |
ISO8200BTR |
Hersteller: STMicroelectronics
Description: IC PWR DRIVER 1:1 PWRSO36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSO-36 Slug Up
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: IC PWR DRIVER 1:1 PWRSO36
Features: Auto Restart, Galvanic Isolation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerBSSOP (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Voltage - Load: 10.5V ~ 36V
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSO-36 Slug Up
Fault Protection: Current Limiting (Fixed), Over Temperature
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
600+ | 15.89 EUR |
L6395DTR |
Hersteller: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
LDFM50PT-TR |
Hersteller: STMicroelectronics
Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 5V 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 60dB ~ 52dB (120Hz ~ 100kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
LDFMPT-TR |
Hersteller: STMicroelectronics
Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR POS ADJ 500MA PPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: PPAK
Voltage - Output (Max): 12V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good
Part Status: Obsolete
PSRR: 62dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Produkt ist nicht verfügbar
LED2472GBTR |
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 72MA 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 24
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Signage
Current - Output / Channel: 72mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 48-TQFP-EP (7x7)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Produkt ist nicht verfügbar
STPSC6H12B-TR1 |
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 4.01 EUR |
5000+ | 3.84 EUR |
STTH1512GY-TR |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 3.77 EUR |
STTH30R04DY |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 400V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 790 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.99 EUR |
50+ | 5.54 EUR |
100+ | 4.75 EUR |
500+ | 4.22 EUR |
SMP1100SCMC |
Hersteller: STMicroelectronics
Description: TVS DIODE 90V SMB
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Voltage - Breakover: 130V
Voltage - Off State: 90V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Description: TVS DIODE 90V SMB
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Voltage - Breakover: 130V
Voltage - Off State: 90V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Produkt ist nicht verfügbar
STB26NM60ND |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
STD2N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
Description: MOSFET N-CH 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.5 EUR |
5000+ | 1.43 EUR |
STD2N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Description: MOSFET N-CH 950V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.5 EUR |
STD3N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Description: MOSFET N-CH 800V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.32 EUR |
STD5N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Description: MOSFET N-CH 950V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.81 EUR |
5000+ | 1.74 EUR |
STL24N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3.51 EUR |
6000+ | 3.37 EUR |
STPS3L45AF |
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 45V 3A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE SCHOTTKY 45V 3A SMAFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.31 EUR |
30000+ | 0.3 EUR |
STF15N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 950V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
auf Bestellung 968 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.79 EUR |
50+ | 8.54 EUR |
100+ | 7.32 EUR |
500+ | 6.51 EUR |
STF26NM60ND |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
STF28N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 418 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.84 EUR |
50+ | 5.42 EUR |
100+ | 4.65 EUR |
STF2N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 1977 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.35 EUR |
50+ | 2.69 EUR |
100+ | 2.13 EUR |
500+ | 1.81 EUR |
1000+ | 1.47 EUR |
STF2N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Description: MOSFET N-CH 950V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
auf Bestellung 2131 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.82 EUR |
10+ | 3.12 EUR |
100+ | 2.43 EUR |
500+ | 2.06 EUR |
1000+ | 1.68 EUR |
2000+ | 1.58 EUR |
STF33N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 962 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.62 EUR |
50+ | 7.64 EUR |
100+ | 6.55 EUR |
500+ | 5.82 EUR |
STF3N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Description: MOSFET N-CH 800V 2.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
auf Bestellung 1218 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.29 EUR |
50+ | 3.46 EUR |
100+ | 2.85 EUR |
500+ | 2.41 EUR |
1000+ | 2.04 EUR |
STF5N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
Description: MOSFET N-CH 600V 3.7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
auf Bestellung 1963 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.51 EUR |
50+ | 2.83 EUR |
100+ | 2.24 EUR |
500+ | 1.9 EUR |
1000+ | 1.55 EUR |
STF5N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Description: MOSFET N-CH 950V 3.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
auf Bestellung 963 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.47 EUR |
50+ | 3.58 EUR |
100+ | 2.95 EUR |
500+ | 2.49 EUR |
STGF10H60DF |
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
Description: IGBT TRENCH FS 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 30 W
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.67 EUR |
STGF15H60DF |
Hersteller: STMicroelectronics
Description: IGBT 600V 30A 30W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
Description: IGBT 600V 30A 30W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
auf Bestellung 606 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.32 EUR |
50+ | 3.47 EUR |
100+ | 2.86 EUR |
500+ | 2.42 EUR |
STGP10H60DF |
Hersteller: STMicroelectronics
Description: IGBT 600V 20A 115W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
Description: IGBT 600V 20A 115W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
auf Bestellung 1930 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.59 EUR |
50+ | 2.89 EUR |
100+ | 2.38 EUR |
500+ | 2.01 EUR |
1000+ | 1.71 EUR |
STGP15H60DF |
Hersteller: STMicroelectronics
Description: IGBT 600V 30A 115W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
Description: IGBT 600V 30A 115W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
auf Bestellung 999 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.97 EUR |
50+ | 3.99 EUR |
100+ | 3.29 EUR |
500+ | 2.78 EUR |
STP15N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Produkt ist nicht verfügbar
STP26NM60ND |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
STP28N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 1020 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.71 EUR |
50+ | 5.3 EUR |
100+ | 4.54 EUR |
500+ | 4.04 EUR |
1000+ | 3.46 EUR |
STP2N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
Description: MOSFET N-CH 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V
auf Bestellung 1680 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.15 EUR |
50+ | 2.52 EUR |
100+ | 1.99 EUR |
500+ | 1.69 EUR |
1000+ | 1.38 EUR |
STP2N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A TO220
Description: MOSFET N-CH 950V 2A TO220
Produkt ist nicht verfügbar
STP33N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 636 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.62 EUR |
50+ | 7.64 EUR |
100+ | 6.55 EUR |
500+ | 5.82 EUR |
STP3N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Description: MOSFET N-CH 800V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.61 EUR |
50+ | 2.92 EUR |
100+ | 2.4 EUR |
500+ | 2.03 EUR |
1000+ | 1.73 EUR |
STP40N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.84 EUR |
50+ | 10.18 EUR |
100+ | 8.73 EUR |
500+ | 7.76 EUR |
1000+ | 6.64 EUR |
STP5N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
Description: MOSFET N-CH 600V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 100 V
auf Bestellung 34 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.11 EUR |
10+ | 3.68 EUR |
STP5N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Description: MOSFET N-CH 950V 3.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
auf Bestellung 876 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.86 EUR |
50+ | 3.92 EUR |
100+ | 3.23 EUR |
500+ | 2.73 EUR |
STU2N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Description: MOSFET N-CH 950V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)STU3N80K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Description: MOSFET N-CH 800V 2.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
auf Bestellung 87 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.21 EUR |
10+ | 3.76 EUR |
STU5N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.7A IPAK
Description: MOSFET N-CH 600V 3.7A IPAK
auf Bestellung 851 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.59 EUR |
10+ | 3.2 EUR |
100+ | 2.49 EUR |
500+ | 2.06 EUR |
STW15N95K5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 950V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Produkt ist nicht verfügbar
STW26NM60ND |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Produkt ist nicht verfügbar
STW28N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Produkt ist nicht verfügbar
STW33N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
auf Bestellung 696 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.32 EUR |
30+ | 9.75 EUR |
120+ | 8.36 EUR |
510+ | 7.43 EUR |
STW70N60M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
Description: MOSFET N-CH 600V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 25.84 EUR |
30+ | 20.63 EUR |
120+ | 18.46 EUR |
510+ | 16.28 EUR |
LMV824AIYDT |
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 800 µV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 2.63 EUR |
LMV824IYDT |
Hersteller: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 300µA (x4 Channels)
Slew Rate: 1.9V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 3.5 mV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
LD39130SJ10R |
Hersteller: STMicroelectronics
Description: IC REG LINEAR 1V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 1V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
Produkt ist nicht verfügbar
LD39130SJ12R |
Hersteller: STMicroelectronics
Description: IC REG LIN 1.2V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LIN 1.2V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 8430 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.55 EUR |
12+ | 2.27 EUR |
25+ | 2.16 EUR |
100+ | 1.77 EUR |
250+ | 1.66 EUR |
500+ | 1.46 EUR |
1000+ | 1.16 EUR |
2500+ | 1.08 EUR |
LD39130SJ18R |
Hersteller: STMicroelectronics
Description: IC REG LIN 1.8V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LIN 1.8V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 26224 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.47 EUR |
12+ | 2.2 EUR |
25+ | 2.09 EUR |
100+ | 1.72 EUR |
250+ | 1.61 EUR |
500+ | 1.42 EUR |
1000+ | 1.12 EUR |
2500+ | 1.05 EUR |
LD39130SJ25R |
Hersteller: STMicroelectronics
Description: IC REG LIN 2.5V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LIN 2.5V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
Produkt ist nicht verfügbar
LD39130SJ29R |
Hersteller: STMicroelectronics
Description: IC REG LIN 2.9V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LIN 2.9V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 257 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.89 EUR |
11+ | 2.58 EUR |
25+ | 2.45 EUR |
100+ | 2.01 EUR |
250+ | 1.88 EUR |
LD39130SJ30R |
Hersteller: STMicroelectronics
Description: IC REG LINEAR 3V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 3V 300MA 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-FlipChip (.69x.69)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 65dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 300mA (Typ)
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 17208 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.55 EUR |
12+ | 2.27 EUR |
25+ | 2.16 EUR |
100+ | 1.77 EUR |
250+ | 1.66 EUR |
500+ | 1.46 EUR |
1000+ | 1.16 EUR |
2500+ | 1.08 EUR |