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CMS08(TE12L,Q) CMS08(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3142&prodName=CMS08 Description: DIODE SCHOTTKY 30V 1A MFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMS09(TE12L,Q) CMS09(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3144&prodName=CMS09 Description: DIODE SCHOTTKY 30V 1A MFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMS10(TE12L,Q,M) CMS10(TE12L,Q,M) Toshiba Semiconductor and Storage CMS10_datasheet_en_20131101.pdf?did=3147&prodName=CMS10 Description: DIODE SCHOTTKY 40V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CMS11(TE12L,Q,M) CMS11(TE12L,Q,M) Toshiba Semiconductor and Storage CMS11_datasheet_en_20131101.pdf?did=3149&prodName=CMS11 Description: DIODE SCHOTTKY 40V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CMS11(TE12L,Q,M) CMS11(TE12L,Q,M) Toshiba Semiconductor and Storage CMS11_datasheet_en_20131101.pdf?did=3149&prodName=CMS11 Description: DIODE SCHOTTKY 40V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 12192 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+0.58 EUR
100+0.40 EUR
500+0.31 EUR
1000+0.27 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
CRH01(TE85L,Q,M) CRH01(TE85L,Q,M) Toshiba Semiconductor and Storage CRH01_datasheet_en_20180404.pdf?did=3154&prodName=CRH01 Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 77247 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
34+0.53 EUR
100+0.40 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CRH01(TE85L,Q,M) CRH01(TE85L,Q,M) Toshiba Semiconductor and Storage CRH01_datasheet_en_20180404.pdf?did=3154&prodName=CRH01 Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.20 EUR
6000+0.19 EUR
30000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS01(TE85L,Q,M) CRS01(TE85L,Q,M) Toshiba Semiconductor and Storage CRS01_datasheet_en_20131101.pdf?did=3157&prodName=CRS01 Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+0.17 EUR
9000+0.16 EUR
15000+0.15 EUR
21000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS01(TE85L,Q,M) CRS01(TE85L,Q,M) Toshiba Semiconductor and Storage CRS01_datasheet_en_20131101.pdf?did=3157&prodName=CRS01 Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 68677 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
35+0.51 EUR
100+0.33 EUR
500+0.24 EUR
1000+0.22 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
CRS03(TE85L,Q,M) CRS03(TE85L,Q,M) Toshiba Semiconductor and Storage CRS03_datasheet_en_20180905.pdf?did=3159&prodName=CRS03 Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS03(TE85L,Q,M) CRS03(TE85L,Q,M) Toshiba Semiconductor and Storage CRS03_datasheet_en_20180905.pdf?did=3159&prodName=CRS03 Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 29589 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
38+0.47 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.18 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
CRS04(TE85L,Q,M) CRS04(TE85L,Q,M) Toshiba Semiconductor and Storage CRS04_datasheet_en_20170417.pdf?did=3161&prodName=CRS04 Description: DIODE SCHOTTKY 40V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 47pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 46602 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
32+0.56 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CRS04(TE85L,Q,M) CRS04(TE85L,Q,M) Toshiba Semiconductor and Storage CRS04_datasheet_en_20170417.pdf?did=3161&prodName=CRS04 Description: DIODE SCHOTTKY 40V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 47pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 46602 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS05(TE85L,Q,M) CRS05(TE85L,Q,M) Toshiba Semiconductor and Storage CRS05_datasheet_en_20190401.pdf?did=3163&prodName=CRS05 Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.20 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS06(TE85L,Q,M) CRS06(TE85L,Q,M) Toshiba Semiconductor and Storage CRS06_datasheet_en_20180911.pdf?did=3165&prodName=CRS06 Description: DIODE SCHOTTKY 20V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.20 EUR
6000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS06(TE85L,Q,M) CRS06(TE85L,Q,M) Toshiba Semiconductor and Storage CRS06_datasheet_en_20180911.pdf?did=3165&prodName=CRS06 Description: DIODE SCHOTTKY 20V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 8205 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
CRS08(TE85L,Q,M) CRS08(TE85L,Q,M) Toshiba Semiconductor and Storage CRS08_Nov1%2C2013.pdf Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 19405 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
31+0.58 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
CRS08(TE85L,Q,M) CRS08(TE85L,Q,M) Toshiba Semiconductor and Storage CRS08_Nov1%2C2013.pdf Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.20 EUR
6000+0.19 EUR
15000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS09(TE85L,Q,M) CRS09(TE85L,Q,M) Toshiba Semiconductor and Storage CRS09_datasheet_en_20180718.pdf?did=3170&prodName=CRS09 Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 105052 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
29+0.62 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
CRS09(TE85L,Q,M) CRS09(TE85L,Q,M) Toshiba Semiconductor and Storage CRS09_datasheet_en_20180718.pdf?did=3170&prodName=CRS09 Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRS11(TE85L,Q,M) CRS11(TE85L,Q,M) Toshiba Semiconductor and Storage CRS11_datasheet_en_20131101.pdf?did=3172&prodName=CRS11 Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 16928 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
CRS11(TE85L,Q,M) CRS11(TE85L,Q,M) Toshiba Semiconductor and Storage CRS11_datasheet_en_20131101.pdf?did=3172&prodName=CRS11 Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.20 EUR
6000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CRZ10(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 10V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ11(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 11V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ12(TE85L,Q) CRZ12(TE85L,Q) Toshiba Semiconductor and Storage CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62 Description: DIODE ZENER 12V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ13(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 13V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ16(TE85L,Q) CRZ16(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 16V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ16(TE85L,Q) CRZ16(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 16V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ20(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 20V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ22(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 22V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ24(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 24V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ27(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 27V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ30(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 30V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ33(TE85L,Q,M) CRZ33(TE85L,Q,M) Toshiba Semiconductor and Storage CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62 Description: DIODE ZENER 33V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 26.4 V
Produkt ist nicht verfügbar
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CRZ36(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 36V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ39(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 39V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ43(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 43V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ47(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 47V 700MW SFLAT
Produkt ist nicht verfügbar
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TMP92FD54AIF TMP92FD54AIF Toshiba Semiconductor and Storage TMP92FD54AIF.pdf Description: IC MCU 32BIT 512KB FLASH 100LQFP
Produkt ist nicht verfügbar
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TMP91FY22FG TMP91FY22FG Toshiba Semiconductor and Storage TMP91FY22F.pdf Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 900/L1
Data Converters: A/D 8x10b
Core Size: 16-Bit
Connectivity: EBI/EMI, IrDA, UART/USART
Peripherals: DMA
Supplier Device Package: 100-QFP (20x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1SV229TPH3F 1SV229TPH3F Toshiba Semiconductor and Storage 1SV229_datasheet_en_20140301.pdf?did=2758&prodName=1SV229 Description: DIODE VARACTOR 15V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.5
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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1SV239TPH3F 1SV239TPH3F Toshiba Semiconductor and Storage 1SV239_datasheet_en_20140301.pdf?did=2769&prodName=1SV239 Description: DIODE VARACTOR 15V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.4
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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1SV271TPH3F 1SV271TPH3F Toshiba Semiconductor and Storage 1SV322FTR.jpg Description: RF DIODE PIN 50V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: USC
Current - Max: 50 mA
Produkt ist nicht verfügbar
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1SV279TH3FT 1SV279TH3FT Toshiba Semiconductor and Storage docget.jsp?did=2793&prodName=1SV279 Description: DIODE VARACTOR 15V ESC
Produkt ist nicht verfügbar
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1SV280,H3F 1SV280,H3F Toshiba Semiconductor and Storage Description: DIODE VARACTOR 15V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.4
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.11 EUR
8000+0.09 EUR
12000+0.08 EUR
Mindestbestellmenge: 4000
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1SV281TH3FT 1SV281TH3FT Toshiba Semiconductor and Storage docget.jsp?did=2798&prodName=1SV281 Description: DIODE VARACTOR 10V ESC
Produkt ist nicht verfügbar
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1SV285TPH3F 1SV285TPH3F Toshiba Semiconductor and Storage 1SV285_datasheet_en_20140301.pdf?did=2808&prodName=1SV285 Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
Produkt ist nicht verfügbar
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1SV304TPH3F 1SV304TPH3F Toshiba Semiconductor and Storage 1SV304_datasheet_en_20140301.pdf?did=2827&prodName=1SV304 Description: DIODE VARACTOR 10V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.0
Produkt ist nicht verfügbar
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1SV310TPH3F 1SV310TPH3F Toshiba Semiconductor and Storage 1SV310_datasheet_en_20140301.pdf?did=2841&prodName=1SV310 Description: DIODE VARACTOR 10V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 5.45pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.1
Produkt ist nicht verfügbar
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1SV311(TPH3,F) 1SV311(TPH3,F) Toshiba Semiconductor and Storage docget.jsp?did=2843&prodName=1SV311 Description: DIODE VARACTOR 10V ESC
Produkt ist nicht verfügbar
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1SV323,H3F 1SV323,H3F Toshiba Semiconductor and Storage 1SV323_datasheet_en_20140301.pdf?did=2854&prodName=1SV323 Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.10 EUR
8000+0.09 EUR
Mindestbestellmenge: 4000
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TMP86FS49AFG(Z) TMP86FS49AFG(Z) Toshiba Semiconductor and Storage Description: IC MCU 8BIT 60KB FLASH 64QFP
Produkt ist nicht verfügbar
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TMP86FS49AUG(JZ) TMP86FS49AUG(JZ) Toshiba Semiconductor and Storage Description: IC MCU 8BIT 60KB FLASH 64LQFP
Produkt ist nicht verfügbar
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TLP350(TP1,F) TLP350(TP1,F) Toshiba Semiconductor and Storage TLP350_datasheet_en_20171018.pdf?did=6217&prodName=TLP350 Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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2SA1162-GR,LF 2SA1162-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
6000+0.04 EUR
9000+0.04 EUR
15000+0.04 EUR
21000+0.04 EUR
30000+0.03 EUR
Mindestbestellmenge: 3000
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2SC2712-Y,LF 2SC2712-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
6000+0.05 EUR
9000+0.05 EUR
15000+0.04 EUR
Mindestbestellmenge: 3000
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2SA1162S-Y, LF(D 2SA1162S-Y, LF(D Toshiba Semiconductor and Storage 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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SSM3K7002BS,LF(D SSM3K7002BS,LF(D Toshiba Semiconductor and Storage SSM3K7002BS.pdf Description: MOSFET N-CH 60V 0.2A S-MINI
Produkt ist nicht verfügbar
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2SA1162-GR,LF 2SA1162-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 39400 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 67
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2SC2712-Y,LF 2SC2712-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 16320 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
105+0.17 EUR
169+0.10 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 63
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CMS08(TE12L,Q) docget.jsp?did=3142&prodName=CMS08
CMS08(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A MFLAT
Produkt ist nicht verfügbar
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CMS09(TE12L,Q) docget.jsp?did=3144&prodName=CMS09
CMS09(TE12L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A MFLAT
Produkt ist nicht verfügbar
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CMS10(TE12L,Q,M) CMS10_datasheet_en_20131101.pdf?did=3147&prodName=CMS10
CMS10(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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CMS11(TE12L,Q,M) CMS11_datasheet_en_20131101.pdf?did=3149&prodName=CMS11
CMS11(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
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CMS11(TE12L,Q,M) CMS11_datasheet_en_20131101.pdf?did=3149&prodName=CMS11
CMS11(TE12L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 12192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
31+0.58 EUR
100+0.40 EUR
500+0.31 EUR
1000+0.27 EUR
Mindestbestellmenge: 27
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CRH01(TE85L,Q,M) CRH01_datasheet_en_20180404.pdf?did=3154&prodName=CRH01
CRH01(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 77247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
34+0.53 EUR
100+0.40 EUR
500+0.30 EUR
1000+0.27 EUR
Mindestbestellmenge: 23
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CRH01(TE85L,Q,M) CRH01_datasheet_en_20180404.pdf?did=3154&prodName=CRH01
CRH01(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
6000+0.19 EUR
30000+0.18 EUR
Mindestbestellmenge: 3000
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CRS01(TE85L,Q,M) CRS01_datasheet_en_20131101.pdf?did=3157&prodName=CRS01
CRS01(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.17 EUR
9000+0.16 EUR
15000+0.15 EUR
21000+0.14 EUR
Mindestbestellmenge: 3000
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CRS01(TE85L,Q,M) CRS01_datasheet_en_20131101.pdf?did=3157&prodName=CRS01
CRS01(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 68677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
35+0.51 EUR
100+0.33 EUR
500+0.24 EUR
1000+0.22 EUR
Mindestbestellmenge: 22
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CRS03(TE85L,Q,M) CRS03_datasheet_en_20180905.pdf?did=3159&prodName=CRS03
CRS03(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
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CRS03(TE85L,Q,M) CRS03_datasheet_en_20180905.pdf?did=3159&prodName=CRS03
CRS03(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 29589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
38+0.47 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.18 EUR
Mindestbestellmenge: 29
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CRS04(TE85L,Q,M) CRS04_datasheet_en_20170417.pdf?did=3161&prodName=CRS04
CRS04(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 47pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 46602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
32+0.56 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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CRS04(TE85L,Q,M) CRS04_datasheet_en_20170417.pdf?did=3161&prodName=CRS04
CRS04(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 47pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 46602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
Mindestbestellmenge: 3000
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CRS05(TE85L,Q,M) CRS05_datasheet_en_20190401.pdf?did=3163&prodName=CRS05
CRS05(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
Mindestbestellmenge: 3000
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CRS06(TE85L,Q,M) CRS06_datasheet_en_20180911.pdf?did=3165&prodName=CRS06
CRS06(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
6000+0.19 EUR
Mindestbestellmenge: 3000
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CRS06(TE85L,Q,M) CRS06_datasheet_en_20180911.pdf?did=3165&prodName=CRS06
CRS06(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 8205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
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CRS08(TE85L,Q,M) CRS08_Nov1%2C2013.pdf
CRS08(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 19405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
31+0.58 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
CRS08(TE85L,Q,M) CRS08_Nov1%2C2013.pdf
CRS08(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
6000+0.19 EUR
15000+0.18 EUR
Mindestbestellmenge: 3000
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CRS09(TE85L,Q,M) CRS09_datasheet_en_20180718.pdf?did=3170&prodName=CRS09
CRS09(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 105052 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
29+0.62 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 28
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CRS09(TE85L,Q,M) CRS09_datasheet_en_20180718.pdf?did=3170&prodName=CRS09
CRS09(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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CRS11(TE85L,Q,M) CRS11_datasheet_en_20131101.pdf?did=3172&prodName=CRS11
CRS11(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 16928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
CRS11(TE85L,Q,M) CRS11_datasheet_en_20131101.pdf?did=3172&prodName=CRS11
CRS11(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
6000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
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CRZ10(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 10V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ11(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 11V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ12(TE85L,Q) CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62
CRZ12(TE85L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Produkt ist nicht verfügbar
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CRZ13(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ16(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
CRZ16(TE85L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 16V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ16(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
CRZ16(TE85L,Q)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 16V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ20(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 20V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ22(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 22V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ24(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 24V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ27(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 27V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ30(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 30V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ33(TE85L,Q,M) CRY62_datasheet_en_20141010.pdf?did=3175&prodName=CRY62
CRZ33(TE85L,Q,M)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 33V 700MW SFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 26.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ36(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 36V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ39(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 39V 700MW SFLAT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CRZ43(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 43V 700MW SFLAT
Produkt ist nicht verfügbar
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CRZ47(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ZENER 47V 700MW SFLAT
Produkt ist nicht verfügbar
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TMP92FD54AIF TMP92FD54AIF.pdf
TMP92FD54AIF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Produkt ist nicht verfügbar
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TMP91FY22FG TMP91FY22F.pdf
TMP91FY22FG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 900/L1
Data Converters: A/D 8x10b
Core Size: 16-Bit
Connectivity: EBI/EMI, IrDA, UART/USART
Peripherals: DMA
Supplier Device Package: 100-QFP (20x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1SV229TPH3F 1SV229_datasheet_en_20140301.pdf?did=2758&prodName=1SV229
1SV229TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 15V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.5
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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1SV239TPH3F 1SV239_datasheet_en_20140301.pdf?did=2769&prodName=1SV239
1SV239TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 15V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.4
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
1SV271TPH3F 1SV322FTR.jpg
1SV271TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 50V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: USC
Current - Max: 50 mA
Produkt ist nicht verfügbar
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1SV279TH3FT docget.jsp?did=2793&prodName=1SV279
1SV279TH3FT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 15V ESC
Produkt ist nicht verfügbar
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1SV280,H3F
1SV280,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 15V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 2.4
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.11 EUR
8000+0.09 EUR
12000+0.08 EUR
Mindestbestellmenge: 4000
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1SV281TH3FT docget.jsp?did=2798&prodName=1SV281
1SV281TH3FT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Produkt ist nicht verfügbar
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1SV285TPH3F 1SV285_datasheet_en_20140301.pdf?did=2808&prodName=1SV285
1SV285TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Part Status: Not For New Designs
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
Produkt ist nicht verfügbar
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1SV304TPH3F 1SV304_datasheet_en_20140301.pdf?did=2827&prodName=1SV304
1SV304TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.0
Produkt ist nicht verfügbar
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1SV310TPH3F 1SV310_datasheet_en_20140301.pdf?did=2841&prodName=1SV310
1SV310TPH3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 5.45pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.1
Produkt ist nicht verfügbar
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1SV311(TPH3,F) docget.jsp?did=2843&prodName=1SV311
1SV311(TPH3,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Produkt ist nicht verfügbar
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1SV323,H3F 1SV323_datasheet_en_20140301.pdf?did=2854&prodName=1SV323
1SV323,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.10 EUR
8000+0.09 EUR
Mindestbestellmenge: 4000
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TMP86FS49AFG(Z)
TMP86FS49AFG(Z)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 8BIT 60KB FLASH 64QFP
Produkt ist nicht verfügbar
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TMP86FS49AUG(JZ)
TMP86FS49AUG(JZ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 8BIT 60KB FLASH 64LQFP
Produkt ist nicht verfügbar
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TLP350(TP1,F) TLP350_datasheet_en_20171018.pdf?did=6217&prodName=TLP350
TLP350(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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2SA1162-GR,LF docget.jsp?did=19351&prodName=2SA1162
2SA1162-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.04 EUR
9000+0.04 EUR
15000+0.04 EUR
21000+0.04 EUR
30000+0.03 EUR
Mindestbestellmenge: 3000
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2SC2712-Y,LF docget.jsp?did=19227&prodName=2SC2712
2SC2712-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.05 EUR
9000+0.05 EUR
15000+0.04 EUR
Mindestbestellmenge: 3000
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2SA1162S-Y, LF(D 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162
2SA1162S-Y, LF(D
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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SSM3K7002BS,LF(D SSM3K7002BS.pdf
SSM3K7002BS,LF(D
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 0.2A S-MINI
Produkt ist nicht verfügbar
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2SA1162-GR,LF docget.jsp?did=19351&prodName=2SA1162
2SA1162-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 39400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 67
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2SC2712-Y,LF docget.jsp?did=19227&prodName=2SC2712
2SC2712-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 16320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
105+0.17 EUR
169+0.10 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 63
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