Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 116 nach 217
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SD2206(T6CNO,A,F) | Toshiba Semiconductor and Storage |
 Description: TRANS NPN 100V 2A TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
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2SD2206(TE6,F,M) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 100V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
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2SD2206,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 100V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
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2SD2206A(T6SEP,F,M | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 2A TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
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2SK3670(F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 670mA (Tj) Supplier Device Package: TO-92MOD |
Produkt ist nicht verfügbar |
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2SK3670(T6CANO,A,F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MOD |
Produkt ist nicht verfügbar |
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2SK3670(T6CANO,F,M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 670mA (Tj) Supplier Device Package: TO-92MOD |
Produkt ist nicht verfügbar |
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2SK3670,F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MOD Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 670mA (Tj) Supplier Device Package: TO-92MOD |
Produkt ist nicht verfügbar |
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| CLS03(T6L,CANO-O,Q | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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| CLS03(T6L,SHINA,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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| CLS03(TE16L,DNSO,Q | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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| CLS03(TE16L,PCD,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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| CLS03(TE16L,PSD,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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| CLS03(TE16L,SQC,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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| CLS03(TE16R,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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| CLS03,LNITTOQ(O | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 10A L-FLAT Packaging: Bulk Package / Case: L-FLAT™ Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 345pF @ 10V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: L-FLAT™ (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
Produkt ist nicht verfügbar |
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TA58L05S(FJTN,AQ) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S(FJTN,QM) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
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TA58L05S(LS2DNS,AQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S(LS2PEV,AQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S(LS2YAZ,AQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
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TA58L05S(SUMIS,AQ) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,ALPSAQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 250mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: TO-220NIS Voltage - Output (Min/Fixed): 5V Part Status: Obsolete Voltage Dropout (Max): 0.4V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 50 mA |
Produkt ist nicht verfügbar |
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TA58L05S,ALPSAQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 250mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: TO-220NIS Voltage - Output (Min/Fixed): 5V Part Status: Obsolete Voltage Dropout (Max): 0.4V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 50 mA |
Produkt ist nicht verfügbar |
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TA58L05S,APNQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,ASHIQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,COMTQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,HY-ATQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,L2SUMIQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,LS2MTDQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,LS2TOKQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,LS4NSAQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,Q(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L05S,SUMISQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L06S,HY-ATQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 6V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L06S,Q(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 6V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L06S,SUMISQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 6V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L08S(FJTN,AQ) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 8V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L08S(FJTN,QM) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 8V 250MA TO220NIS |
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TA58L08S,Q(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 8V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L08S,SUMISQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 8V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L09S,LS2PAIQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 9V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L09S,LS2PAIQ(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 9V 250MA TO220NIS |
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TA58L09S,Q(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 9V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L09S,Q(M | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 9V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L10S,Q(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 10V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L12S(FJTN,AQ) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L12S(FJTN,QM) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 250MA TO220NIS |
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TA58L12S,ASHIQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L12S,LS1TOKQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L12S,Q(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L12S,WNLQ(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58L15S,Q(J | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 15V 250MA TO220NIS |
Produkt ist nicht verfügbar |
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TA58M05S(AFT,LB180 | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 500UA TO220NIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: TO-220NIS Voltage - Output (Min/Fixed): 5V Part Status: Obsolete Voltage Dropout (Max): 0.65V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 80 mA |
Produkt ist nicht verfügbar |
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TA76431AS(T6CNO,FM | Toshiba Semiconductor and Storage |
Description: IC VREF 100MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Supplier Device Package: LSTM Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TA76431AS(T6MURAFM | Toshiba Semiconductor and Storage |
Description: IC VREF 100MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Supplier Device Package: LSTM Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TA76431AS(T6SOY,AF | Toshiba Semiconductor and Storage |
Description: IC VREF 100MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Supplier Device Package: LSTM Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TA76431AS(T6SOY,FM | Toshiba Semiconductor and Storage |
Description: IC VREF 100MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Supplier Device Package: LSTM Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TA76431AS(TE6,F,M) | Toshiba Semiconductor and Storage |
Description: IC VREF 100MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Supplier Device Package: LSTM Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TA76431AS,T6F(J | Toshiba Semiconductor and Storage |
Description: IC VREF 100MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Supplier Device Package: LSTM Part Status: Obsolete |
Produkt ist nicht verfügbar |
| 2SD2206(T6CNO,A,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
| 2SD2206(TE6,F,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
| 2SD2206,T6F(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
| 2SD2206A(T6SEP,F,M |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
Description: TRANS NPN 120V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
| 2SK3670(F,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
| 2SK3670(T6CANO,A,F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Description: MOSFET N-CH TO92MOD
Produkt ist nicht verfügbar
| 2SK3670(T6CANO,F,M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
| 2SK3670,F(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
Produkt ist nicht verfügbar
| CLS03(T6L,CANO-O,Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| CLS03(T6L,SHINA,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| CLS03(TE16L,DNSO,Q |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| CLS03(TE16L,PCD,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| CLS03(TE16L,PSD,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| CLS03(TE16L,SQC,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| CLS03(TE16R,Q) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| CLS03,LNITTOQ(O |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
| TA58L05S(FJTN,AQ) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S(FJTN,QM) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S(LS2DNS,AQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S(LS2PEV,AQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S(LS2YAZ,AQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S(SUMIS,AQ) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,ALPSAQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
Produkt ist nicht verfügbar
| TA58L05S,ALPSAQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
Produkt ist nicht verfügbar
| TA58L05S,APNQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,ASHIQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,COMTQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,HY-ATQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,L2SUMIQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,LS2MTDQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,LS2TOKQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,LS4NSAQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,Q(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L05S,SUMISQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Description: IC REG LINEAR 5V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L06S,HY-ATQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 250MA TO220NIS
Description: IC REG LINEAR 6V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L06S,Q(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 250MA TO220NIS
Description: IC REG LINEAR 6V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L06S,SUMISQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 250MA TO220NIS
Description: IC REG LINEAR 6V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L08S(FJTN,AQ) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA TO220NIS
Description: IC REG LINEAR 8V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L08S(FJTN,QM) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA TO220NIS
Description: IC REG LINEAR 8V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L08S,Q(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA TO220NIS
Description: IC REG LINEAR 8V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L08S,SUMISQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA TO220NIS
Description: IC REG LINEAR 8V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L09S,LS2PAIQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 250MA TO220NIS
Description: IC REG LINEAR 9V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L09S,LS2PAIQ(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 250MA TO220NIS
Description: IC REG LINEAR 9V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L09S,Q(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 250MA TO220NIS
Description: IC REG LINEAR 9V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L09S,Q(M |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 250MA TO220NIS
Description: IC REG LINEAR 9V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L10S,Q(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 250MA TO220NIS
Description: IC REG LINEAR 10V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L12S(FJTN,AQ) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 250MA TO220NIS
Description: IC REG LINEAR 12V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L12S(FJTN,QM) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 250MA TO220NIS
Description: IC REG LINEAR 12V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L12S,ASHIQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 250MA TO220NIS
Description: IC REG LINEAR 12V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L12S,LS1TOKQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 250MA TO220NIS
Description: IC REG LINEAR 12V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L12S,Q(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 250MA TO220NIS
Description: IC REG LINEAR 12V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L12S,WNLQ(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 250MA TO220NIS
Description: IC REG LINEAR 12V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58L15S,Q(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 15V 250MA TO220NIS
Description: IC REG LINEAR 15V 250MA TO220NIS
Produkt ist nicht verfügbar
| TA58M05S(AFT,LB180 |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500UA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
Description: IC REG LINEAR 5V 500UA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
Produkt ist nicht verfügbar
| TA76431AS(T6CNO,FM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
| TA76431AS(T6MURAFM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
| TA76431AS(T6SOY,AF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
| TA76431AS(T6SOY,FM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
| TA76431AS(TE6,F,M) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar
| TA76431AS,T6F(J |
|
Hersteller: Toshiba Semiconductor and Storage
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Description: IC VREF 100MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
Produkt ist nicht verfügbar