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V8P8-M3/86A V8P8-M3/86A Vishay General Semiconductor - Diodes Division v8p8.pdf Description: DIODE SCHOTTKY 80V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 8 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
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V8P8-M3/86A V8P8-M3/86A Vishay General Semiconductor - Diodes Division v8p8.pdf Description: DIODE SCHOTTKY 80V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 8 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
auf Bestellung 724 Stücke:
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21+0.85 EUR
100+0.58 EUR
500+0.46 EUR
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1N6382HE3/51 1N6382HE3/51 Vishay General Semiconductor - Diodes Division ICTE5-18C,_1N6373-86_Sep.22.16.pdf Description: TVS DIODE 8VWM 11.6VC 1.5KE
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ICTE8CHE3_A/D ICTE8CHE3_A/D Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 8VWM 11.6VC 1.5KE
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ICTE8HE3_A/C ICTE8HE3_A/C Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 8VWM 11.5VC 1.5KE
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1N6374HE3_A/C 1N6374HE3_A/C Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 8VWM 11.5VC 1.5KE
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ICTE8CHE3_A/C ICTE8CHE3_A/C Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 8VWM 11.6VC 1.5KE
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ICTE8CHE3/51 ICTE8CHE3/51 Vishay General Semiconductor - Diodes Division ICTE5-18C,_1N6373-86_Sep.22.16.pdf Description: TVS DIODE 8VWM 11.6VC 1.5KE
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ICTE8HE3_A/D ICTE8HE3_A/D Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 8VWM 11.5VC 1.5KE
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1N6382HE3_A/D 1N6382HE3_A/D Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 8VWM 11.6VC 1.5KE
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1N6382HE3_A/C 1N6382HE3_A/C Vishay General Semiconductor - Diodes Division icte.pdf Description: TVS DIODE 8VWM 11.6VC 1.5KE
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ICTE8HE3/51 ICTE8HE3/51 Vishay General Semiconductor - Diodes Division ICTE5-18C,_1N6373-86_Sep.22.16.pdf Description: TVS DIODE 8VWM 11.5VC 1.5KE
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1N6374HE3/51 1N6374HE3/51 Vishay General Semiconductor - Diodes Division ICTE5-18C,_1N6373-86_Sep.22.16.pdf Description: TVS DIODE 8VWM 11.5VC 1.5KE
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BAS40-06-E3-18 BAS40-06-E3-18 Vishay General Semiconductor - Diodes Division BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
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BAS40-06-E3-18 BAS40-06-E3-18 Vishay General Semiconductor - Diodes Division BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 9997 Stücke:
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69+0.26 EUR
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BZX55B4V7-TR BZX55B4V7-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Qualification: AEC-Q101
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BZX55B4V7-TR BZX55B4V7-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Qualification: AEC-Q101
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VS-HFA08PB120-N3 VS-HFA08PB120-N3 Vishay General Semiconductor - Diodes Division vs-hfa08pb1.pdf Description: DIODE STANDARD 1200V 8A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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SMAJ8.0CA-E3/5A SMAJ8.0CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ8.0CA-E3/5A SMAJ8.0CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ90CA-E3/61 SMAJ90CA-E3/61 Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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SMAJ90CA-E3/61 SMAJ90CA-E3/61 Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
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SMBJ10CD-M3/H SMBJ10CD-M3/H Vishay General Semiconductor - Diodes Division tf-smbj10cd-m3-h.pdf Description: TVS DIODE 10VWM 16.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.3V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6750 Stücke:
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750+0.26 EUR
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3750+0.2 EUR
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SMBJ10CD-M3/H SMBJ10CD-M3/H Vishay General Semiconductor - Diodes Division tf-smbj10cd-m3-h.pdf Description: TVS DIODE 10VWM 16.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.3V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMAJ15CA-E3/5A SMAJ15CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ15CA-E3/5A SMAJ15CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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SMAJ14CAHM3/I SMAJ14CAHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ14CAHM3/H SMAJ14CAHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ14CAHM3_A/H SMAJ14CAHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR20H100CTG-E3/45 MBR20H100CTG-E3/45 Vishay General Semiconductor - Diodes Division MBR20H90%2C100CTG.pdf Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
auf Bestellung 350 Stücke:
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RGP10M-E3/54 RGP10M-E3/54 Vishay General Semiconductor - Diodes Division rgp10a.pdf Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5500 Stücke:
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5500+0.24 EUR
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RGP10M-E3/54 RGP10M-E3/54 Vishay General Semiconductor - Diodes Division rgp10a.pdf Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 11229 Stücke:
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20+0.92 EUR
29+0.61 EUR
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500+0.32 EUR
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BZX85C18-TR BZX85C18-TR Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
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5000+0.082 EUR
10000+0.074 EUR
15000+0.07 EUR
25000+0.058 EUR
35000+0.055 EUR
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BZX85C18-TR BZX85C18-TR Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
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BZT03C39-TR BZT03C39-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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BZT03C39-TR BZT03C39-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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BZT03C51-TAP BZT03C51-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 43VWM 70.8VC SOD57
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZT03C51-TAP BZT03C51-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 43VWM 70.8VC SOD57
Tolerance: ±5.88%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZT03C75-TR BZT03C75-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 62VWM 103.5VC SOD57
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
auf Bestellung 27610 Stücke:
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BZT03C75-TR BZT03C75-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 62VWM 103.5VC SOD57
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
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BZT03C30-TR BZT03C30-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
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BZT03C30-TR BZT03C30-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 24961 Stücke:
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16+1.13 EUR
18+0.99 EUR
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500+0.6 EUR
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BZT03C91-TR BZT03C91-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 75VWM 126VC SOD57
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
auf Bestellung 20000 Stücke:
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BZT03C91-TR BZT03C91-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 75VWM 126VC SOD57
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
auf Bestellung 22013 Stücke:
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18+0.99 EUR
21+0.85 EUR
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500+0.49 EUR
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BZT03C6V2-TR BZT03C6V2-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 6.2V 1.3W SOD57
Tolerance: ±6.45%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1.5 mA @ 4.7 V
auf Bestellung 15000 Stücke:
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BZT03C6V2-TR BZT03C6V2-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 6.2V 1.3W SOD57
Tolerance: ±6.45%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1.5 mA @ 4.7 V
auf Bestellung 19565 Stücke:
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10+1.85 EUR
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500+0.58 EUR
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BZT03C8V2-TR BZT03C8V2-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 6.8VWM 12.3VC SOD57
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 600 µA @ 6.2 V
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BZT03C8V2-TR BZT03C8V2-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 6.8VWM 12.3VC SOD57
Tolerance: ±6.1%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 600 µA @ 6.2 V
auf Bestellung 22631 Stücke:
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17+1.07 EUR
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500+0.54 EUR
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MMBD914-HE3-08 MMBD914-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBD914-HE3-08 MMBD914-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBD914-G3-18 MMBD914-G3-18 Vishay General Semiconductor - Diodes Division mmbd914-g.pdf Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 10000 Stücke:
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MMBD914-G3-18 MMBD914-G3-18 Vishay General Semiconductor - Diodes Division mmbd914-g.pdf Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1000+0.07 EUR
2000+0.065 EUR
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BZX55B9V1-TR BZX55B9V1-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 9.1V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
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BZX55B9V1-TR BZX55B9V1-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 9.1V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
auf Bestellung 26618 Stücke:
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112+0.16 EUR
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BZD27B9V1P-M3-08 BZD27B9V1P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
auf Bestellung 75000 Stücke:
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3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
30000+0.15 EUR
75000+0.14 EUR
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BZD27B9V1P-M3-08 BZD27B9V1P-M3-08 Vishay General Semiconductor - Diodes Division bzd27b-mseries.pdf Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
auf Bestellung 83068 Stücke:
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27+0.67 EUR
35+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.2 EUR
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BZT52B9V1-E3-08 BZT52B9V1-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 9.1V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
auf Bestellung 6000 Stücke:
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3000+0.077 EUR
6000+0.069 EUR
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BZT52B9V1-E3-08 BZT52B9V1-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
auf Bestellung 11690 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
100+0.18 EUR
208+0.085 EUR
500+0.083 EUR
1000+0.082 EUR
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VS-UFL330FA60 VS-UFL330FA60 Vishay General Semiconductor - Diodes Division vs-ufl330fa60.pdf Description: DIODE MODULE GP 600V 243A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 98 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 243A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 200 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
auf Bestellung 120 Stücke:
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1+45.39 EUR
10+40.34 EUR
100+35.28 EUR
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VS-GT140DA60U VS-GT140DA60U Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 200A 652W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 652 W
Current - Collector Cutoff (Max): 100 µA
Produkt ist nicht verfügbar
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V8P8-M3/86A v8p8.pdf
V8P8-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 8 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
Produkt ist nicht verfügbar
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V8P8-M3/86A v8p8.pdf
V8P8-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 8 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
21+0.85 EUR
100+0.58 EUR
500+0.46 EUR
Mindestbestellmenge: 14
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1N6382HE3/51 ICTE5-18C,_1N6373-86_Sep.22.16.pdf
1N6382HE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.6VC 1.5KE
Produkt ist nicht verfügbar
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ICTE8CHE3_A/D icte.pdf
ICTE8CHE3_A/D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.6VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICTE8HE3_A/C icte.pdf
ICTE8HE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.5VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N6374HE3_A/C icte.pdf
1N6374HE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.5VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICTE8CHE3_A/C icte.pdf
ICTE8CHE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.6VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICTE8CHE3/51 ICTE5-18C,_1N6373-86_Sep.22.16.pdf
ICTE8CHE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.6VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICTE8HE3_A/D icte.pdf
ICTE8HE3_A/D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.5VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N6382HE3_A/D icte.pdf
1N6382HE3_A/D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.6VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N6382HE3_A/C icte.pdf
1N6382HE3_A/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.6VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICTE8HE3/51 ICTE5-18C,_1N6373-86_Sep.22.16.pdf
ICTE8HE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.5VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N6374HE3/51 ICTE5-18C,_1N6373-86_Sep.22.16.pdf
1N6374HE3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 11.5VC 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-06-E3-18 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-06-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS40-06-E3-18 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-06-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 9997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
69+0.26 EUR
113+0.16 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 48
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BZX55B4V7-TR bzx55.pdf
BZX55B4V7-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.049 EUR
Mindestbestellmenge: 10000
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BZX55B4V7-TR bzx55.pdf
BZX55B4V7-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Qualification: AEC-Q101
auf Bestellung 27283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
271+0.065 EUR
394+0.045 EUR
500+0.044 EUR
1000+0.043 EUR
2000+0.042 EUR
5000+0.038 EUR
Mindestbestellmenge: 112
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VS-HFA08PB120-N3 vs-hfa08pb1.pdf
VS-HFA08PB120-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-247AC-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.68 EUR
25+5.83 EUR
100+5.38 EUR
500+4.52 EUR
Mindestbestellmenge: 2
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SMAJ8.0CA-E3/5A smaj50a.pdf
SMAJ8.0CA-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ8.0CA-E3/5A smaj50a.pdf
SMAJ8.0CA-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 13.6VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 32
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SMAJ90CA-E3/61 smaj50a.pdf
SMAJ90CA-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.19 EUR
Mindestbestellmenge: 1800
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SMAJ90CA-E3/61 smaj50a.pdf
SMAJ90CA-E3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
auf Bestellung 3284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
32+0.55 EUR
100+0.28 EUR
500+0.25 EUR
Mindestbestellmenge: 23
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SMBJ10CD-M3/H tf-smbj10cd-m3-h.pdf
SMBJ10CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 16.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.3V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 6750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.26 EUR
1500+0.23 EUR
2250+0.22 EUR
3750+0.2 EUR
5250+0.19 EUR
Mindestbestellmenge: 750
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SMBJ10CD-M3/H tf-smbj10cd-m3-h.pdf
SMBJ10CD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 16.7VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.9A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.3V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 7365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
32+0.57 EUR
100+0.36 EUR
Mindestbestellmenge: 20
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SMAJ15CA-E3/5A smaj50a.pdf
SMAJ15CA-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMAJ15CA-E3/5A smaj50a.pdf
SMAJ15CA-E3/5A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 12333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
49+0.36 EUR
124+0.14 EUR
Mindestbestellmenge: 33
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SMAJ14CAHM3/I smaj50a.pdf
SMAJ14CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ14CAHM3/H smaj50a.pdf
SMAJ14CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ14CAHM3_A/H smaj50a.pdf
SMAJ14CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17.2A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR20H100CTG-E3/45 MBR20H90%2C100CTG.pdf
MBR20H100CTG-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+1.95 EUR
100+1.58 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
RGP10M-E3/54 rgp10a.pdf
RGP10M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5500+0.24 EUR
Mindestbestellmenge: 5500
Im Einkaufswagen  Stück im Wert von  UAH
RGP10M-E3/54 rgp10a.pdf
RGP10M-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 11229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.3 EUR
2000+0.27 EUR
Mindestbestellmenge: 20
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BZX85C18-TR BZX85_Series.pdf
BZX85C18-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.082 EUR
10000+0.074 EUR
15000+0.07 EUR
25000+0.058 EUR
35000+0.055 EUR
Mindestbestellmenge: 5000
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BZX85C18-TR BZX85_Series.pdf
BZX85C18-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39647 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
89+0.2 EUR
197+0.089 EUR
500+0.086 EUR
1000+0.083 EUR
Mindestbestellmenge: 59
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BZT03C39-TR bzt03.pdf
BZT03C39-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
Mindestbestellmenge: 5000
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BZT03C39-TR bzt03.pdf
BZT03C39-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 54.1VC SOD57
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 27933 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.38 EUR
Mindestbestellmenge: 15
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BZT03C51-TAP bzt03.pdf
BZT03C51-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 70.8VC SOD57
Tolerance: ±5.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 4805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.99 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.48 EUR
2000+0.46 EUR
Mindestbestellmenge: 16
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BZT03C51-TAP bzt03.pdf
BZT03C51-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 70.8VC SOD57
Tolerance: ±5.88%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.46 EUR
Mindestbestellmenge: 5000
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BZT03C75-TR bzt03.pdf
BZT03C75-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 62VWM 103.5VC SOD57
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
auf Bestellung 27610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.38 EUR
10000+0.36 EUR
25000+0.35 EUR
Mindestbestellmenge: 5000
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BZT03C75-TR bzt03.pdf
BZT03C75-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 62VWM 103.5VC SOD57
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
auf Bestellung 27610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.46 EUR
2000+0.41 EUR
Mindestbestellmenge: 17
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BZT03C30-TR bzt03.pdf
BZT03C30-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.46 EUR
Mindestbestellmenge: 5000
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BZT03C30-TR bzt03.pdf
BZT03C30-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 42.2VC SOD57
Tolerance: ±6.67%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
auf Bestellung 24961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.99 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.48 EUR
2000+0.46 EUR
Mindestbestellmenge: 16
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BZT03C91-TR bzt03.pdf
BZT03C91-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 126VC SOD57
Tolerance: ±6.04%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
Mindestbestellmenge: 5000
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BZT03C91-TR bzt03.pdf
BZT03C91-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 126VC SOD57
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
auf Bestellung 22013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.85 EUR
100+0.59 EUR
500+0.49 EUR
1000+0.42 EUR
2000+0.37 EUR
Mindestbestellmenge: 18
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BZT03C6V2-TR bzt03.pdf
BZT03C6V2-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1.3W SOD57
Tolerance: ±6.45%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1.5 mA @ 4.7 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.38 EUR
Mindestbestellmenge: 5000
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BZT03C6V2-TR bzt03.pdf
BZT03C6V2-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1.3W SOD57
Tolerance: ±6.45%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1.5 mA @ 4.7 V
auf Bestellung 19565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.15 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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BZT03C8V2-TR bzt03.pdf
BZT03C8V2-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.8VWM 12.3VC SOD57
Tolerance: ±6.1%
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 600 µA @ 6.2 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.36 EUR
Mindestbestellmenge: 5000
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BZT03C8V2-TR bzt03.pdf
BZT03C8V2-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.8VWM 12.3VC SOD57
Tolerance: ±6.1%
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 600 µA @ 6.2 V
auf Bestellung 22631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
19+0.93 EUR
100+0.65 EUR
500+0.54 EUR
1000+0.46 EUR
2000+0.41 EUR
Mindestbestellmenge: 17
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MMBD914-HE3-08
MMBD914-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBD914-HE3-08
MMBD914-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBD914-G3-18 mmbd914-g.pdf
MMBD914-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.049 EUR
Mindestbestellmenge: 10000
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MMBD914-G3-18 mmbd914-g.pdf
MMBD914-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
114+0.15 EUR
174+0.1 EUR
500+0.079 EUR
1000+0.07 EUR
2000+0.065 EUR
5000+0.059 EUR
Mindestbestellmenge: 84
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BZX55B9V1-TR bzx55.pdf
BZX55B9V1-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.049 EUR
Mindestbestellmenge: 10000
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BZX55B9V1-TR bzx55.pdf
BZX55B9V1-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Qualification: AEC-Q101
auf Bestellung 26618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
477+0.037 EUR
Mindestbestellmenge: 112
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BZD27B9V1P-M3-08 bzd27b-mseries.pdf
BZD27B9V1P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
30000+0.15 EUR
75000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZD27B9V1P-M3-08 bzd27b-mseries.pdf
BZD27B9V1P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
auf Bestellung 83068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
35+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.2 EUR
Mindestbestellmenge: 27
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BZT52B9V1-E3-08 bzt52.pdf
BZT52B9V1-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.077 EUR
6000+0.069 EUR
Mindestbestellmenge: 3000
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BZT52B9V1-E3-08 bzt52.pdf
BZT52B9V1-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
auf Bestellung 11690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
100+0.18 EUR
208+0.085 EUR
500+0.083 EUR
1000+0.082 EUR
Mindestbestellmenge: 67
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VS-UFL330FA60 vs-ufl330fa60.pdf
VS-UFL330FA60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 243A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 98 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 243A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 200 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.39 EUR
10+40.34 EUR
100+35.28 EUR
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VS-GT140DA60U
VS-GT140DA60U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 200A 652W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 652 W
Current - Collector Cutoff (Max): 100 µA
Produkt ist nicht verfügbar
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