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1.5SMC9.1AHM3/H 1.5SMC9.1AHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
1.5SMC9.1CAHM3_A/I 1.5SMC9.1CAHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
1.5SMC9.1CAHM3/H 1.5SMC9.1CAHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
TPSMC9.1AHE3_B/I Vishay General Semiconductor - Diodes Division tpsmc.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
BZX55B4V3-TR BZX55B4V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.051 EUR
30000+ 0.048 EUR
Mindestbestellmenge: 10000
BZX55B4V3-TR BZX55B4V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
auf Bestellung 39957 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
57+ 0.31 EUR
107+ 0.17 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.067 EUR
5000+ 0.058 EUR
Mindestbestellmenge: 46
BZX55B6V8-TR BZX55B6V8-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.046 EUR
Mindestbestellmenge: 10000
BZX55B6V8-TR BZX55B6V8-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24840 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
73+ 0.24 EUR
149+ 0.12 EUR
500+ 0.099 EUR
1000+ 0.069 EUR
2000+ 0.06 EUR
5000+ 0.055 EUR
Mindestbestellmenge: 50
BZT55B18-GS08 BZT55B18-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 18V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.087 EUR
5000+ 0.081 EUR
Mindestbestellmenge: 2500
BZT55B18-GS08 BZT55B18-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 18V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12258 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
BZT55B2V7-GS18 BZT55B2V7-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 2.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZT55B2V7-GS18 BZT55B2V7-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 2.7V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6330 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
2000+ 0.087 EUR
5000+ 0.081 EUR
Mindestbestellmenge: 34
BZT55B3V9-GS08 BZT55B3V9-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.087 EUR
Mindestbestellmenge: 2500
BZT55B3V9-GS08 BZT55B3V9-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6787 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
BZT55C3V6-GS18 BZT55C3V6-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.6V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZT55C3V6-GS18 BZT55C3V6-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3.6V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8880 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
75+ 0.24 EUR
153+ 0.12 EUR
500+ 0.096 EUR
1000+ 0.067 EUR
2000+ 0.058 EUR
5000+ 0.054 EUR
Mindestbestellmenge: 50
BZT55C3V0-GS08 BZT55C3V0-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.057 EUR
5000+ 0.053 EUR
Mindestbestellmenge: 2500
BZT55C3V0-GS08 BZT55C3V0-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 3V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11662 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
76+ 0.23 EUR
156+ 0.11 EUR
500+ 0.095 EUR
1000+ 0.066 EUR
Mindestbestellmenge: 53
BZT52C12-G3-08 BZT52C12-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g_series.pdf Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.082 EUR
6000+ 0.076 EUR
9000+ 0.063 EUR
Mindestbestellmenge: 3000
BZT52C12-G3-08 BZT52C12-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g_series.pdf Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 13995 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
53+ 0.34 EUR
108+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
Mindestbestellmenge: 36
MMSZ5237C-E3-18 MMSZ5237C-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
MMSZ5237C-E3-18 MMSZ5237C-E3-18 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 8.2V 500MW SOD123
auf Bestellung 8013 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
40+ 0.44 EUR
100+ 0.23 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.094 EUR
5000+ 0.082 EUR
Mindestbestellmenge: 34
MMSZ5237B-E3-08 MMSZ5237B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
MMSZ5237B-E3-08 MMSZ5237B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
SMCJ100CAHE3_A/H SMCJ100CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
SMCJ100CAHM3/I SMCJ100CAHM3/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMCJ100CAHE3_A/I SMCJ100CAHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
BZX84B6V2-HE3-08 BZX84B6V2-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 6.2V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.068 EUR
6000+ 0.063 EUR
9000+ 0.052 EUR
Mindestbestellmenge: 3000
BZX84B6V2-HE3-08 BZX84B6V2-HE3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 6.2V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
64+ 0.28 EUR
131+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.078 EUR
Mindestbestellmenge: 44
AS1FD-M3/H AS1FD-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 200V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FMHM3/H AS1FMHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVALANCHE 1KV 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
AS1FK-M3/H AS1FK-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 800V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FDHM3/H AS1FDHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 200V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FGHM3/H AS1FGHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FJHM3/H AS1FJHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 600V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FKHM3/H AS1FKHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 800V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FG-M3/H AS1FG-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FJ-M3/H AS1FJ-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 600V 1.5A DO219AB
Produkt ist nicht verfügbar
VS-15TQ060STRL-M3 VS-15TQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-15tq060s-m3.pdf Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 5922 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
10+ 1.81 EUR
100+ 1.41 EUR
Mindestbestellmenge: 8
VS-15TQ060STRL-M3 VS-15TQ060STRL-M3 Vishay General Semiconductor - Diodes Division vs-15tq060s-m3.pdf Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.19 EUR
1600+ 0.97 EUR
2400+ 0.91 EUR
5600+ 0.87 EUR
Mindestbestellmenge: 800
SMCJ100CAHM3_A/H SMCJ100CAHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
SMCJ100CAHM3_A/I SMCJ100CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
VT6045CBP-M3/4W VT6045CBP-M3/4W Vishay General Semiconductor - Diodes Division vt6045cb.pdf Description: DIODE ARR SCHOTT 45V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
auf Bestellung 6179 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.91 EUR
10+ 4.12 EUR
100+ 3.33 EUR
500+ 2.96 EUR
1000+ 2.53 EUR
2000+ 2.39 EUR
5000+ 2.29 EUR
Mindestbestellmenge: 4
VFT3045CBP-M3/4W VFT3045CBP-M3/4W Vishay General Semiconductor - Diodes Division vft345cb.pdf Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
auf Bestellung 234 Stücke:
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6+3.12 EUR
50+ 2.5 EUR
100+ 2.05 EUR
Mindestbestellmenge: 6
ES2BHE3_A/I ES2BHE3_A/I Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
3200+0.28 EUR
6400+ 0.27 EUR
Mindestbestellmenge: 3200
ES2BHE3_A/I ES2BHE3_A/I Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6403 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+ 0.72 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
TPSMB8.2AHE3_A/I TPSMB8.2AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2AHE3_A/H TPSMB8.2AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2HE3/52T TPSMB8.2HE3/52T Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 6.63VWM 12.5VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2AHM3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2A1BHE3_A/I TPSMB8.2A1BHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 600W SMB DO214AA
Produkt ist nicht verfügbar
TPSMB8.2AHM3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2A1BHE3/5BT TPSMB8.2A1BHE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2HE3/5BT TPSMB8.2HE3/5BT Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 6.63VWM 12.5VC DO214AA
Produkt ist nicht verfügbar
1N5223B-T 1N5223B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
1N5245B-T 1N5245B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-E5TX3012S2LHM3 VS-E5TX3012S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2lhm3.pdf Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1632 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.84 EUR
10+ 4.07 EUR
100+ 3.29 EUR
Mindestbestellmenge: 4
VS-E5TX3006S2LHM3 VS-E5TX3006S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2lhm3.pdf Description: 30A, 600V, "X" SERIES GEN 5 FRED
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.66 EUR
Mindestbestellmenge: 800
VS-E5TX3006S2LHM3 VS-E5TX3006S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2lhm3.pdf Description: 30A, 600V, "X" SERIES GEN 5 FRED
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.42 EUR
10+ 3.7 EUR
100+ 3 EUR
Mindestbestellmenge: 4
BZG05C3V9-M3-18 BZG05C3V9-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 3.9V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.16 EUR
Mindestbestellmenge: 6000
1.5SMC9.1AHM3/H 15smc.pdf
1.5SMC9.1AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
1.5SMC9.1CAHM3_A/I 15smc.pdf
1.5SMC9.1CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
1.5SMC9.1CAHM3/H 15smc.pdf
1.5SMC9.1CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
TPSMC9.1AHE3_B/I tpsmc.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AB
Produkt ist nicht verfügbar
BZX55B4V3-TR bzx55.pdf
BZX55B4V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.051 EUR
30000+ 0.048 EUR
Mindestbestellmenge: 10000
BZX55B4V3-TR bzx55.pdf
BZX55B4V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
auf Bestellung 39957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
57+ 0.31 EUR
107+ 0.17 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.067 EUR
5000+ 0.058 EUR
Mindestbestellmenge: 46
BZX55B6V8-TR bzx55.pdf
BZX55B6V8-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.046 EUR
Mindestbestellmenge: 10000
BZX55B6V8-TR bzx55.pdf
BZX55B6V8-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
73+ 0.24 EUR
149+ 0.12 EUR
500+ 0.099 EUR
1000+ 0.069 EUR
2000+ 0.06 EUR
5000+ 0.055 EUR
Mindestbestellmenge: 50
BZT55B18-GS08 bzt55.pdf
BZT55B18-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.087 EUR
5000+ 0.081 EUR
Mindestbestellmenge: 2500
BZT55B18-GS08 bzt55.pdf
BZT55B18-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
BZT55B2V7-GS18 bzt55.pdf
BZT55B2V7-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZT55B2V7-GS18 bzt55.pdf
BZT55B2V7-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
2000+ 0.087 EUR
5000+ 0.081 EUR
Mindestbestellmenge: 34
BZT55B3V9-GS08 bzt55.pdf
BZT55B3V9-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.087 EUR
Mindestbestellmenge: 2500
BZT55B3V9-GS08 bzt55.pdf
BZT55B3V9-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6787 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
BZT55C3V6-GS18 bzt55.pdf
BZT55C3V6-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BZT55C3V6-GS18 bzt55.pdf
BZT55C3V6-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
75+ 0.24 EUR
153+ 0.12 EUR
500+ 0.096 EUR
1000+ 0.067 EUR
2000+ 0.058 EUR
5000+ 0.054 EUR
Mindestbestellmenge: 50
BZT55C3V0-GS08 bzt55.pdf
BZT55C3V0-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.057 EUR
5000+ 0.053 EUR
Mindestbestellmenge: 2500
BZT55C3V0-GS08 bzt55.pdf
BZT55C3V0-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11662 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
53+0.33 EUR
76+ 0.23 EUR
156+ 0.11 EUR
500+ 0.095 EUR
1000+ 0.066 EUR
Mindestbestellmenge: 53
BZT52C12-G3-08 bzt52-g_series.pdf
BZT52C12-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.082 EUR
6000+ 0.076 EUR
9000+ 0.063 EUR
Mindestbestellmenge: 3000
BZT52C12-G3-08 bzt52-g_series.pdf
BZT52C12-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 13995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
36+0.49 EUR
53+ 0.34 EUR
108+ 0.16 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
Mindestbestellmenge: 36
MMSZ5237C-E3-18 mmsz5225.pdf
MMSZ5237C-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
MMSZ5237C-E3-18 mmsz5225.pdf
MMSZ5237C-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
auf Bestellung 8013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
40+ 0.44 EUR
100+ 0.23 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.094 EUR
5000+ 0.082 EUR
Mindestbestellmenge: 34
MMSZ5237B-E3-08 mmsz5225.pdf
MMSZ5237B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
MMSZ5237B-E3-08 mmsz5225.pdf
MMSZ5237B-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD123
Produkt ist nicht verfügbar
SMCJ100CAHE3_A/H smcj.pdf
SMCJ100CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
SMCJ100CAHM3/I smcj.pdf
SMCJ100CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMCJ100CAHE3_A/I smcj.pdf
SMCJ100CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
BZX84B6V2-HE3-08 bzx84_series.pdf
BZX84B6V2-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.068 EUR
6000+ 0.063 EUR
9000+ 0.052 EUR
Mindestbestellmenge: 3000
BZX84B6V2-HE3-08 bzx84_series.pdf
BZX84B6V2-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Last Time Buy
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
64+ 0.28 EUR
131+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.078 EUR
Mindestbestellmenge: 44
AS1FD-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FD-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FMHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FMHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
AS1FK-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FK-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FDHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FDHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FGHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FJHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FJHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FKHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FKHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FG-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Produkt ist nicht verfügbar
AS1FJ-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FJ-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO219AB
Produkt ist nicht verfügbar
VS-15TQ060STRL-M3 vs-15tq060s-m3.pdf
VS-15TQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 5922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.22 EUR
10+ 1.81 EUR
100+ 1.41 EUR
Mindestbestellmenge: 8
VS-15TQ060STRL-M3 vs-15tq060s-m3.pdf
VS-15TQ060STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+1.19 EUR
1600+ 0.97 EUR
2400+ 0.91 EUR
5600+ 0.87 EUR
Mindestbestellmenge: 800
SMCJ100CAHM3_A/H smcj.pdf
SMCJ100CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
SMCJ100CAHM3_A/I smcj.pdf
SMCJ100CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Produkt ist nicht verfügbar
VT6045CBP-M3/4W vt6045cb.pdf
VT6045CBP-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
auf Bestellung 6179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.91 EUR
10+ 4.12 EUR
100+ 3.33 EUR
500+ 2.96 EUR
1000+ 2.53 EUR
2000+ 2.39 EUR
5000+ 2.29 EUR
Mindestbestellmenge: 4
VFT3045CBP-M3/4W vft345cb.pdf
VFT3045CBP-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.12 EUR
50+ 2.5 EUR
100+ 2.05 EUR
Mindestbestellmenge: 6
ES2BHE3_A/I es2.pdf
ES2BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3200+0.28 EUR
6400+ 0.27 EUR
Mindestbestellmenge: 3200
ES2BHE3_A/I es2.pdf
ES2BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.72 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
TPSMB8.2AHE3_A/I tpsmb.pdf
TPSMB8.2AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2AHE3_A/H tpsmb.pdf
TPSMB8.2AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2HE3/52T tpsmb.pdf
TPSMB8.2HE3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.63VWM 12.5VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2AHM3_A/I tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2A1BHE3_A/I tpsmb.pdf
TPSMB8.2A1BHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600W SMB DO214AA
Produkt ist nicht verfügbar
TPSMB8.2AHM3_A/H tpsmb.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2A1BHE3/5BT tpsmb.pdf
TPSMB8.2A1BHE3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
Produkt ist nicht verfügbar
TPSMB8.2HE3/5BT tpsmb.pdf
TPSMB8.2HE3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.63VWM 12.5VC DO214AA
Produkt ist nicht verfügbar
1N5223B-T 1n5221.pdf
1N5223B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
1N5245B-T 1n5221.pdf
1N5245B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-E5TX3012S2LHM3 vs-e5tx3012s2lhm3.pdf
VS-E5TX3012S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.84 EUR
10+ 4.07 EUR
100+ 3.29 EUR
Mindestbestellmenge: 4
VS-E5TX3006S2LHM3 vs-e5tx3006s2lhm3.pdf
VS-E5TX3006S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 30A, 600V, "X" SERIES GEN 5 FRED
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+2.66 EUR
Mindestbestellmenge: 800
VS-E5TX3006S2LHM3 vs-e5tx3006s2lhm3.pdf
VS-E5TX3006S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 30A, 600V, "X" SERIES GEN 5 FRED
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.42 EUR
10+ 3.7 EUR
100+ 3 EUR
Mindestbestellmenge: 4
BZG05C3V9-M3-18 bzg05c-m-series.pdf
BZG05C3V9-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6000+0.16 EUR
Mindestbestellmenge: 6000
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