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VS-12CDU06HM3/I VS-12CDU06HM3/I Vishay General Semiconductor - Diodes Division vs-12cdu06hm3.pdf Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-12CDU06HM3/I VS-12CDU06HM3/I Vishay General Semiconductor - Diodes Division vs-12cdu06hm3.pdf Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
10+ 2.08 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.12 EUR
Mindestbestellmenge: 7
SM6S10AHE3_A/I SM6S10AHE3_A/I Vishay General Semiconductor - Diodes Division sm6s.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SM5S10AHE3_A/I SM5S10AHE3_A/I Vishay General Semiconductor - Diodes Division sm5s.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMBJ160CAHE3_A/H SMBJ160CAHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ160CAHM3/I SMBJ160CAHM3/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMBJ160CA58HE3_A/I SMBJ160CA58HE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ160CAHM3/H SMBJ160CAHM3/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMBJ160CAHE3_A/I SMBJ160CAHE3_A/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ160CA58HE3/5B SMBJ160CA58HE3/5B Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
NSB8MTHE3_B/I NSB8MTHE3_B/I Vishay General Semiconductor - Diodes Division ns8xt.pdf Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
NSB8MTHE3_B/P NSB8MTHE3_B/P Vishay General Semiconductor - Diodes Division ns8xt.pdf Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+ 2.31 EUR
100+ 1.8 EUR
500+ 1.49 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 7
SMA6F6.0A-M3/6A SMA6F6.0A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
3500+0.22 EUR
7000+ 0.21 EUR
Mindestbestellmenge: 3500
SMA6F6.0A-M3/6A SMA6F6.0A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 7882 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
32+ 0.57 EUR
100+ 0.39 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 28
DZ23C3V3-G3-08 DZ23C3V3-G3-08 Vishay General Semiconductor - Diodes Division dz23g.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+ 0.092 EUR
9000+ 0.077 EUR
Mindestbestellmenge: 3000
DZ23C3V3-G3-08 DZ23C3V3-G3-08 Vishay General Semiconductor - Diodes Division dz23g.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
auf Bestellung 14980 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
44+ 0.41 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 30
VS-16EDH02-M3/I VS-16EDH02-M3/I Vishay General Semiconductor - Diodes Division vs-16edh02-m3.pdf Description: DIODE GEN PURP 200V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
VS-16EDH02-M3/I VS-16EDH02-M3/I Vishay General Semiconductor - Diodes Division vs-16edh02-m3.pdf Description: DIODE GEN PURP 200V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 1839 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
11+ 1.75 EUR
100+ 1.36 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
VS-25FR80 VS-25FR80 Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.49 EUR
10+ 8.8 EUR
100+ 7.12 EUR
Mindestbestellmenge: 2
VS-25FR20 VS-25FR20 Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GEN PURP 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.01 EUR
10+ 6.71 EUR
100+ 5.43 EUR
Mindestbestellmenge: 3
VS-25FR80M VS-25FR80M Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GP REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.53 EUR
10+ 15.03 EUR
100+ 12.52 EUR
Mindestbestellmenge: 2
VS-25F80M VS-25F80M Vishay General Semiconductor - Diodes Division vs-25frseries.pdf Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.53 EUR
10+ 15.03 EUR
100+ 12.52 EUR
Mindestbestellmenge: 2
VS-3C10ET07T-M3 VS-3C10ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 3047 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.34 EUR
10+ 7.49 EUR
100+ 6.13 EUR
500+ 5.22 EUR
1000+ 4.58 EUR
Mindestbestellmenge: 3
VS-3C04ET07T-M3 VS-3C04ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c04et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
50+ 3.03 EUR
100+ 2.49 EUR
500+ 2.11 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 5
VS-3C08ET07T-M3 VS-3C08ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c08et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1934 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.95 EUR
50+ 4.72 EUR
100+ 4.05 EUR
500+ 3.6 EUR
1000+ 3.08 EUR
Mindestbestellmenge: 3
VS-3C16ET07T-M3 VS-3C16ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c16et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.51 EUR
10+ 11.31 EUR
100+ 9.36 EUR
500+ 8.15 EUR
1000+ 7.66 EUR
Mindestbestellmenge: 2
VS-3C12ET07S2L-M3 VS-3C12ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+6.87 EUR
Mindestbestellmenge: 800
VS-3C12ET07S2L-M3 VS-3C12ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1557 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.67 EUR
10+ 9.57 EUR
100+ 7.84 EUR
Mindestbestellmenge: 2
VS-3C06ET07T-M3 VS-3C06ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c06et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.56 EUR
50+ 3.61 EUR
100+ 3.09 EUR
500+ 2.75 EUR
1000+ 2.35 EUR
2000+ 2.22 EUR
Mindestbestellmenge: 4
VS-3C10ET07S2L-M3 VS-3C10ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
800+5.53 EUR
1600+ 4.85 EUR
Mindestbestellmenge: 800
VS-3C10ET07S2L-M3 VS-3C10ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c10et07s2l-m.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.84 EUR
10+ 7.93 EUR
100+ 6.5 EUR
Mindestbestellmenge: 2
VS-3C12ET07T-M3 VS-3C12ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c12et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.16 EUR
10+ 9.12 EUR
100+ 7.47 EUR
500+ 6.36 EUR
1000+ 5.58 EUR
Mindestbestellmenge: 2
VS-3C20ET07T-M3 VS-3C20ET07T-M3 Vishay General Semiconductor - Diodes Division vs-3c20et07t-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.72 EUR
10+ 15.11 EUR
100+ 12.51 EUR
500+ 10.94 EUR
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VS-3C20ET07S2L-M3 VS-3C20ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c20et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
VS-3C20ET07S2L-M3 VS-3C20ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c20et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.7 EUR
10+ 15.1 EUR
100+ 12.5 EUR
Mindestbestellmenge: 2
VS-3C06ET07S2L-M3 VS-3C06ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c06et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.6 EUR
Mindestbestellmenge: 800
VS-3C06ET07S2L-M3 VS-3C06ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c06et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.58 EUR
10+ 5.01 EUR
100+ 4.1 EUR
Mindestbestellmenge: 4
VS-3C04ET07S2L-M3 VS-3C04ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c04et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.91 EUR
Mindestbestellmenge: 800
VS-3C04ET07S2L-M3 VS-3C04ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c04et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
10+ 4.28 EUR
100+ 3.44 EUR
Mindestbestellmenge: 4
VS-3C16ET07S2L-M3 VS-3C16ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c16et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+8.73 EUR
Mindestbestellmenge: 800
VS-3C16ET07S2L-M3 VS-3C16ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c16et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.97 EUR
10+ 11.71 EUR
100+ 9.7 EUR
Mindestbestellmenge: 2
VS-3C08ET07S2L-M3 VS-3C08ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c08et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.01 EUR
1600+ 3.43 EUR
Mindestbestellmenge: 800
VS-3C08ET07S2L-M3 VS-3C08ET07S2L-M3 Vishay General Semiconductor - Diodes Division vs-3c08et07s2l-m3.pdf Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.65 EUR
10+ 5.58 EUR
100+ 4.51 EUR
Mindestbestellmenge: 3
XLD8A24CAHM3/I XLD8A24CAHM3/I Vishay General Semiconductor - Diodes Division xld8a24ca.pdf Description: PPPM=7000W AND IPPM=180A WITH 10
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 11000W (11kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
750+3.2 EUR
1500+ 2.74 EUR
Mindestbestellmenge: 750
XLD8A24CAHM3/I XLD8A24CAHM3/I Vishay General Semiconductor - Diodes Division xld8a24ca.pdf Description: PPPM=7000W AND IPPM=180A WITH 10
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 11000W (11kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2084 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.3 EUR
10+ 4.45 EUR
100+ 3.6 EUR
Mindestbestellmenge: 4
SMCJ18CAHM3/H SMCJ18CAHM3/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
MMSZ5242C-HE3-08 MMSZ5242C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
MMSZ5242C-HE3-08 MMSZ5242C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225.pdf Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
AR1PK-M3/84A AR1PK-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 800V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
Mindestbestellmenge: 3000
AR1PK-M3/84A AR1PK-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
28+ 0.63 EUR
100+ 0.43 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 23
AR1FK-M3/H AR1FK-M3/H Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
15000+ 0.12 EUR
Mindestbestellmenge: 3000
AU1FK-M3/H AU1FK-M3/H Vishay General Semiconductor - Diodes Division au1fd-au1fm.pdf Description: DIODE AVALANCHE 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
15000+ 0.12 EUR
Mindestbestellmenge: 3000
PLZ3V9B-HG3_A/H PLZ3V9B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.03 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
4500+0.11 EUR
9000+ 0.092 EUR
13500+ 0.078 EUR
Mindestbestellmenge: 4500
PLZ3V9B-HG3_A/H PLZ3V9B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.03 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 20702 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
36+ 0.5 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
PLZ3V0B-HG3_A/H PLZ3V0B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.12V 960MW DO219AC
Tolerance: ±3.37%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.12 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
PLZ3V0B-HG3_A/H PLZ3V0B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.12V 960MW DO219AC
Tolerance: ±3.37%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.12 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
PLZ27B-HG3_A/H PLZ27B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 25.62V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
Produkt ist nicht verfügbar
PLZ27B-HG3_A/H PLZ27B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 25.62V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
PLZ12B-HG3_A/H PLZ12B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 12V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
4500+0.11 EUR
9000+ 0.092 EUR
13500+ 0.078 EUR
Mindestbestellmenge: 4500
PLZ12B-HG3_A/H PLZ12B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 12V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
auf Bestellung 21090 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
36+ 0.5 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
VS-12CDU06HM3/I vs-12cdu06hm3.pdf
VS-12CDU06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
VS-12CDU06HM3/I vs-12cdu06hm3.pdf
VS-12CDU06HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.55 EUR
10+ 2.08 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.12 EUR
Mindestbestellmenge: 7
SM6S10AHE3_A/I sm6s.pdf
SM6S10AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SM5S10AHE3_A/I sm5s.pdf
SM5S10AHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SMBJ160CAHE3_A/H smbj.pdf
SMBJ160CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ160CAHM3/I smbj.pdf
SMBJ160CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMBJ160CA58HE3_A/I smbj.pdf
SMBJ160CA58HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ160CAHM3/H smbj.pdf
SMBJ160CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMBJ160CAHE3_A/I smbj.pdf
SMBJ160CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMBJ160CA58HE3/5B smbj.pdf
SMBJ160CA58HE3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
NSB8MTHE3_B/I ns8xt.pdf
NSB8MTHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
NSB8MTHE3_B/P ns8xt.pdf
NSB8MTHE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.59 EUR
10+ 2.31 EUR
100+ 1.8 EUR
500+ 1.49 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 7
SMA6F6.0A-M3/6A sma6f5.pdf
SMA6F6.0A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3500+0.22 EUR
7000+ 0.21 EUR
Mindestbestellmenge: 3500
SMA6F6.0A-M3/6A sma6f5.pdf
SMA6F6.0A-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 13.7VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 290A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.7V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 7882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
32+ 0.57 EUR
100+ 0.39 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 28
DZ23C3V3-G3-08 dz23g.pdf
DZ23C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.092 EUR
9000+ 0.077 EUR
Mindestbestellmenge: 3000
DZ23C3V3-G3-08 dz23g.pdf
DZ23C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
auf Bestellung 14980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
44+ 0.41 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 30
VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
VS-16EDH02-M3/I vs-16edh02-m3.pdf
VS-16EDH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 1839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.15 EUR
11+ 1.75 EUR
100+ 1.36 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
VS-25FR80 vs-25frseries.pdf
VS-25FR80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.49 EUR
10+ 8.8 EUR
100+ 7.12 EUR
Mindestbestellmenge: 2
VS-25FR20 vs-25frseries.pdf
VS-25FR20
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.01 EUR
10+ 6.71 EUR
100+ 5.43 EUR
Mindestbestellmenge: 3
VS-25FR80M vs-25frseries.pdf
VS-25FR80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.53 EUR
10+ 15.03 EUR
100+ 12.52 EUR
Mindestbestellmenge: 2
VS-25F80M vs-25frseries.pdf
VS-25F80M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.53 EUR
10+ 15.03 EUR
100+ 12.52 EUR
Mindestbestellmenge: 2
VS-3C10ET07T-M3 vs-3c10et07t-m3.pdf
VS-3C10ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 3047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.34 EUR
10+ 7.49 EUR
100+ 6.13 EUR
500+ 5.22 EUR
1000+ 4.58 EUR
Mindestbestellmenge: 3
VS-3C04ET07T-M3 vs-3c04et07t-m3.pdf
VS-3C04ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.77 EUR
50+ 3.03 EUR
100+ 2.49 EUR
500+ 2.11 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 5
VS-3C08ET07T-M3 vs-3c08et07t-m3.pdf
VS-3C08ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.95 EUR
50+ 4.72 EUR
100+ 4.05 EUR
500+ 3.6 EUR
1000+ 3.08 EUR
Mindestbestellmenge: 3
VS-3C16ET07T-M3 vs-3c16et07t-m3.pdf
VS-3C16ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.51 EUR
10+ 11.31 EUR
100+ 9.36 EUR
500+ 8.15 EUR
1000+ 7.66 EUR
Mindestbestellmenge: 2
VS-3C12ET07S2L-M3 vs-3c12et07s2l-m.pdf
VS-3C12ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+6.87 EUR
Mindestbestellmenge: 800
VS-3C12ET07S2L-M3 vs-3c12et07s2l-m.pdf
VS-3C12ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.67 EUR
10+ 9.57 EUR
100+ 7.84 EUR
Mindestbestellmenge: 2
VS-3C06ET07T-M3 vs-3c06et07t-m3.pdf
VS-3C06ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.56 EUR
50+ 3.61 EUR
100+ 3.09 EUR
500+ 2.75 EUR
1000+ 2.35 EUR
2000+ 2.22 EUR
Mindestbestellmenge: 4
VS-3C10ET07S2L-M3 vs-3c10et07s2l-m.pdf
VS-3C10ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+5.53 EUR
1600+ 4.85 EUR
Mindestbestellmenge: 800
VS-3C10ET07S2L-M3 vs-3c10et07s2l-m.pdf
VS-3C10ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 445pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.84 EUR
10+ 7.93 EUR
100+ 6.5 EUR
Mindestbestellmenge: 2
VS-3C12ET07T-M3 vs-3c12et07t-m3.pdf
VS-3C12ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 535pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
Current - Reverse Leakage @ Vr: 65 µA @ 650 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.16 EUR
10+ 9.12 EUR
100+ 7.47 EUR
500+ 6.36 EUR
1000+ 5.58 EUR
Mindestbestellmenge: 2
VS-3C20ET07T-M3 vs-3c20et07t-m3.pdf
VS-3C20ET07T-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.72 EUR
10+ 15.11 EUR
100+ 12.51 EUR
500+ 10.94 EUR
Mindestbestellmenge: 2
VS-3C20ET07S2L-M3 vs-3c20et07s2l-m3.pdf
VS-3C20ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
VS-3C20ET07S2L-M3 vs-3c20et07s2l-m3.pdf
VS-3C20ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.7 EUR
10+ 15.1 EUR
100+ 12.5 EUR
Mindestbestellmenge: 2
VS-3C06ET07S2L-M3 vs-3c06et07s2l-m3.pdf
VS-3C06ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.6 EUR
Mindestbestellmenge: 800
VS-3C06ET07S2L-M3 vs-3c06et07s2l-m3.pdf
VS-3C06ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.58 EUR
10+ 5.01 EUR
100+ 4.1 EUR
Mindestbestellmenge: 4
VS-3C04ET07S2L-M3 vs-3c04et07s2l-m3.pdf
VS-3C04ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+2.91 EUR
Mindestbestellmenge: 800
VS-3C04ET07S2L-M3 vs-3c04et07s2l-m3.pdf
VS-3C04ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.77 EUR
10+ 4.28 EUR
100+ 3.44 EUR
Mindestbestellmenge: 4
VS-3C16ET07S2L-M3 vs-3c16et07s2l-m3.pdf
VS-3C16ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+8.73 EUR
Mindestbestellmenge: 800
VS-3C16ET07S2L-M3 vs-3c16et07s2l-m3.pdf
VS-3C16ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.97 EUR
10+ 11.71 EUR
100+ 9.7 EUR
Mindestbestellmenge: 2
VS-3C08ET07S2L-M3 vs-3c08et07s2l-m3.pdf
VS-3C08ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+4.01 EUR
1600+ 3.43 EUR
Mindestbestellmenge: 800
VS-3C08ET07S2L-M3 vs-3c08et07s2l-m3.pdf
VS-3C08ET07S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.65 EUR
10+ 5.58 EUR
100+ 4.51 EUR
Mindestbestellmenge: 3
XLD8A24CAHM3/I xld8a24ca.pdf
XLD8A24CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: PPPM=7000W AND IPPM=180A WITH 10
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 11000W (11kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
750+3.2 EUR
1500+ 2.74 EUR
Mindestbestellmenge: 750
XLD8A24CAHM3/I xld8a24ca.pdf
XLD8A24CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: PPPM=7000W AND IPPM=180A WITH 10
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 11000W (11kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.3 EUR
10+ 4.45 EUR
100+ 3.6 EUR
Mindestbestellmenge: 4
SMCJ18CAHM3/H smcj.pdf
SMCJ18CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 51.4A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
MMSZ5242C-HE3-08 mmsz5225.pdf
MMSZ5242C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
MMSZ5242C-HE3-08 mmsz5225.pdf
MMSZ5242C-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
AR1PK-M3/84A ar1pm.pdf
AR1PK-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
Mindestbestellmenge: 3000
AR1PK-M3/84A ar1pm.pdf
AR1PK-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
28+ 0.63 EUR
100+ 0.43 EUR
500+ 0.32 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 23
AR1FK-M3/H ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FK-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
15000+ 0.12 EUR
Mindestbestellmenge: 3000
AU1FK-M3/H au1fd-au1fm.pdf
AU1FK-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
15000+ 0.12 EUR
Mindestbestellmenge: 3000
PLZ3V9B-HG3_A/H plzseries.pdf
PLZ3V9B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.03 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4500+0.11 EUR
9000+ 0.092 EUR
13500+ 0.078 EUR
Mindestbestellmenge: 4500
PLZ3V9B-HG3_A/H plzseries.pdf
PLZ3V9B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.03V 960MW DO219AC
Tolerance: ±3.35%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.03 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 20702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
36+ 0.5 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
PLZ3V0B-HG3_A/H plzseries.pdf
PLZ3V0B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.12V 960MW DO219AC
Tolerance: ±3.37%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.12 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Produkt ist nicht verfügbar
PLZ3V0B-HG3_A/H plzseries.pdf
PLZ3V0B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.12V 960MW DO219AC
Tolerance: ±3.37%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.12 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
PLZ27B-HG3_A/H plzseries.pdf
PLZ27B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25.62V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
Produkt ist nicht verfügbar
PLZ27B-HG3_A/H plzseries.pdf
PLZ27B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 25.62V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 25.62 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 21 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
PLZ12B-HG3_A/H plzseries.pdf
PLZ12B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4500+0.11 EUR
9000+ 0.092 EUR
13500+ 0.078 EUR
Mindestbestellmenge: 4500
PLZ12B-HG3_A/H plzseries.pdf
PLZ12B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
auf Bestellung 21090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
36+ 0.5 EUR
100+ 0.26 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 29
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