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1.5SMC400AHM3_B/H 1.5SMC400AHM3_B/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 342VWM 548VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
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850+1.02 EUR
1700+0.95 EUR
2550+0.92 EUR
Mindestbestellmenge: 850
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1.5SMC400AHM3_B/H 1.5SMC400AHM3_B/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 342VWM 548VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3183 Stücke:
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8+2.45 EUR
10+2.01 EUR
100+1.53 EUR
Mindestbestellmenge: 8
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3KASMC40AHE3_B/H 3KASMC40AHE3_B/H Vishay General Semiconductor - Diodes Division 3kasmc.pdf Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE300A-E3/51 1.5KE300A-E3/51 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 256VWM 414VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB15A-E3/5B P6SMB15A-E3/5B Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3200 Stücke:
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P6SMB15A-E3/5B P6SMB15A-E3/5B Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3200 Stücke:
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32+0.56 EUR
46+0.38 EUR
100+0.19 EUR
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MBRB760-E3/45 MBRB760-E3/45 Vishay General Semiconductor - Diodes Division mbr7xx.pdf Description: DIODE SCHOTTKY 60V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 998 Stücke:
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100+1.13 EUR
500+0.96 EUR
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MBRB1635-E3/45 MBRB1635-E3/45 Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
auf Bestellung 292 Stücke:
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8+2.34 EUR
10+1.91 EUR
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MMSZ4708-E3-08 MMSZ4708-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
auf Bestellung 12000 Stücke:
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3000+0.072 EUR
6000+0.067 EUR
9000+0.056 EUR
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MMSZ4708-E3-08 MMSZ4708-E3-08 Vishay General Semiconductor - Diodes Division mmsz4681_to_mmsz4717.pdf Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
auf Bestellung 17791 Stücke:
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40+0.44 EUR
60+0.29 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.083 EUR
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SS15P3S-M3/87A SS15P3S-M3/87A Vishay General Semiconductor - Diodes Division ss15p3s.pdf Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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SS15P3S-M3/87A SS15P3S-M3/87A Vishay General Semiconductor - Diodes Division ss15p3s.pdf Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 6494 Stücke:
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10+1.95 EUR
14+1.29 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.72 EUR
2000+0.68 EUR
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P6SMB91CAHE3_A/I P6SMB91CAHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 77.8VWM 125VC DO214AA
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P6SMB91CAHM3_A/H P6SMB91CAHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 77.8VWM 125VC DO214AA
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P6SMB9.1CAHM3/I P6SMB9.1CAHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AA
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P6SMB91CAHM3_A/I P6SMB91CAHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 77.8VWM 125VC DO214AA
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P6SMB9.1CAHE3_A/I P6SMB9.1CAHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AA
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P6SMB91CAHM3/H P6SMB91CAHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 77.8VWM 125VC DO214AA
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P6SMB91CAHE3_A/H P6SMB91CAHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 77.8VWM 125VC DO214AA
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P6SMB9.1CAHM3_A/H P6SMB9.1CAHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AA
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P6SMB9.1CAHE3_A/H P6SMB9.1CAHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AA
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P6SMB9.1CAHM3/H P6SMB9.1CAHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AA
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P6SMB91CAHM3/I P6SMB91CAHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 77.8VWM 125VC DO214AA
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P6SMB9.1CAHM3_A/I P6SMB9.1CAHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.78VWM 13.4VC DO214AA
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BZX384C3V9-HG3-08 BZX384C3V9-HG3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.9V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.095 EUR
6000+0.085 EUR
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BZX384C3V9-HG3-08 BZX384C3V9-HG3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.9V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8225 Stücke:
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56+0.32 EUR
108+0.16 EUR
176+0.1 EUR
1000+0.099 EUR
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TZM5248B-GS18 TZM5248B-GS18 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Produkt ist nicht verfügbar
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TZM5248B-GS18 TZM5248B-GS18 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 9753 Stücke:
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84+0.21 EUR
118+0.15 EUR
278+0.063 EUR
500+0.06 EUR
1000+0.055 EUR
2000+0.054 EUR
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VS-ETU1506-M3 VS-ETU1506-M3 Vishay General Semiconductor - Diodes Division vs-etu1506m3.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 7980 Stücke:
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8+2.22 EUR
50+1.78 EUR
100+1.41 EUR
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VS-ETU1506-1HM3 VS-ETU1506-1HM3 Vishay General Semiconductor - Diodes Division vs-etu1506shm3.pdf Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETU2006S2LHM3 VS-ETU2006S2LHM3 Vishay General Semiconductor - Diodes Division vs-etu2006s2lhm3.pdf Description: FREDS - D2PAK
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VS-E5TX1506FP-N3 VS-E5TX1506FP-N3 Vishay General Semiconductor - Diodes Division vs-e5tx1506fp-n3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 961 Stücke:
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50+1.91 EUR
100+1.52 EUR
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VS-E5TW1206FP-N3 VS-E5TW1206FP-N3 Vishay General Semiconductor - Diodes Division vs-e5tw1206fp-n3.pdf Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1088 Stücke:
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8+2.46 EUR
10+2.2 EUR
100+1.72 EUR
500+1.42 EUR
1000+1.16 EUR
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VS-E5TH3006-M3 VS-E5TH3006-M3 Vishay General Semiconductor - Diodes Division vs-e5th3006-m3.pdf Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 5384 Stücke:
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6+3.12 EUR
50+1.5 EUR
100+1.35 EUR
500+1.24 EUR
1000+1.15 EUR
2000+1.07 EUR
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VS-E5TW1506FP-N3 VS-E5TW1506FP-N3 Vishay General Semiconductor - Diodes Division vs-e5tw1506fp-n3.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1145 Stücke:
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7+2.76 EUR
50+1.46 EUR
100+1.32 EUR
500+1.08 EUR
1000+1 EUR
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VS-E5TH3012-M3 VS-E5TH3012-M3 Vishay General Semiconductor - Diodes Division vs-e5th3012-m3.pdf Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 3965 Stücke:
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4+5 EUR
50+2.5 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.69 EUR
2000+1.58 EUR
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VS-E5TX1206FP-N3 VS-E5TX1206FP-N3 Vishay General Semiconductor - Diodes Division vs-e5tx1206fp-n3.pdf Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1048 Stücke:
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500+1.42 EUR
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VS-E5TH3012S2LHM3 VS-E5TH3012S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2lhm3.pdf Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TH3012S2LHM3 VS-E5TH3012S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2lhm3.pdf Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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VS-E5TH3006THN3 VS-E5TH3006THN3 Vishay General Semiconductor - Diodes Division vs-e5th3006thn3.pdf Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 825 Stücke:
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VS-E5TX3012S2LHM3 VS-E5TX3012S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2lhm3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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800+2.25 EUR
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VS-E5TX0812THN3 VS-E5TX0812THN3 Vishay General Semiconductor - Diodes Division vs-e5tx0812thn3.pdf Description: FREDS - TO-220G5,8A,1200V, LOW Q
Produkt ist nicht verfügbar
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VS-E5TX1512S2LHM3 VS-E5TX1512S2LHM3 Vishay General Semiconductor - Diodes Division vs-e5tx1512s2lhm3.pdf Description: FREDS - D2PAK
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VS-E5TX3012THN3 VS-E5TX3012THN3 Vishay General Semiconductor - Diodes Division vs-e5tx3012thn3.pdf Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TH0812THN3 VS-E5TH0812THN3 Vishay General Semiconductor - Diodes Division vs-e5th0812hn3.pdf Description: DIODE GEN PURP 1.2KV 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TH3012THN3 VS-E5TH3012THN3 Vishay General Semiconductor - Diodes Division vs-e5th3012thn3.pdf Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TX1512THN3 VS-E5TX1512THN3 Vishay General Semiconductor - Diodes Division vs-e5tx1512thn3.pdf Description: FREDS - TO-220G5,15A,1200V, LOW
Produkt ist nicht verfügbar
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GMF05LC-HSF-GS08 GMF05LC-HSF-GS08 Vishay General Semiconductor - Diodes Division gmf05lch.pdf Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
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GMF05LC-HSF-GS08 GMF05LC-HSF-GS08 Vishay General Semiconductor - Diodes Division gmf05lch.pdf Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
auf Bestellung 12800 Stücke:
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16+1.11 EUR
19+0.95 EUR
100+0.71 EUR
500+0.56 EUR
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VS-GT50YF120NT Vishay General Semiconductor - Diodes Division vs-gt50yf120nt.pdf Description: ECONO - 4 PACK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 50 µA
auf Bestellung 108 Stücke:
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1+157.04 EUR
12+142.53 EUR
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VS-GT75YF120UT VS-GT75YF120UT Vishay General Semiconductor - Diodes Division vs-gt75yf120ut.pdf Description: ECONO - 4 PACK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
auf Bestellung 107 Stücke:
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1+193.05 EUR
12+181.12 EUR
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VS-GT75YF120NT Vishay General Semiconductor - Diodes Division vs-gt75yf120nt.pdf Description: ECONO - 4 PACK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
auf Bestellung 105 Stücke:
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1+186.05 EUR
12+173.48 EUR
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TZM5261F-GS18 TZM5261F-GS18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 47V 500MW SOD80
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TZM5241F-GS18 TZM5241F-GS18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 11V 500MW SOD80
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TZM5243F-GS18 TZM5243F-GS18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 13V 500MW SOD80
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TZM5246F-GS18 TZM5246F-GS18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 16V 500MW SOD80
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TZM5229F-GS18 TZM5229F-GS18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.3V 500MW SOD80
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TZM5257F-GS08 TZM5257F-GS08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 33V 500MW SOD80
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TZM5262F-GS08 TZM5262F-GS08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 51V 500MW SOD80
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TZM5222F-GS08 TZM5222F-GS08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 2.5V 500MW SOD80
Produkt ist nicht verfügbar
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1.5SMC400AHM3_B/H 15smc.pdf
1.5SMC400AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
850+1.02 EUR
1700+0.95 EUR
2550+0.92 EUR
Mindestbestellmenge: 850
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1.5SMC400AHM3_B/H 15smc.pdf
1.5SMC400AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3183 Stücke:
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Anzahl Preis
8+2.45 EUR
10+2.01 EUR
100+1.53 EUR
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3KASMC40AHE3_B/H 3kasmc.pdf
3KASMC40AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE300A-E3/51
1.5KE300A-E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 256VWM 414VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB15A-E3/5B p6smb.pdf
P6SMB15A-E3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3200+0.13 EUR
Mindestbestellmenge: 3200
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P6SMB15A-E3/5B p6smb.pdf
P6SMB15A-E3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.38 EUR
100+0.19 EUR
Mindestbestellmenge: 32
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MBRB760-E3/45 mbr7xx.pdf
MBRB760-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 998 Stücke:
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Anzahl Preis
10+1.78 EUR
50+1.42 EUR
100+1.13 EUR
500+0.96 EUR
Mindestbestellmenge: 10
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MBRB1635-E3/45 mbrf16xx.pdf
MBRB1635-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
auf Bestellung 292 Stücke:
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Anzahl Preis
8+2.34 EUR
10+1.91 EUR
100+1.49 EUR
Mindestbestellmenge: 8
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MMSZ4708-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4708-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.072 EUR
6000+0.067 EUR
9000+0.056 EUR
Mindestbestellmenge: 3000
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MMSZ4708-E3-08 mmsz4681_to_mmsz4717.pdf
MMSZ4708-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
auf Bestellung 17791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
60+0.29 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.083 EUR
Mindestbestellmenge: 40
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SS15P3S-M3/87A ss15p3s.pdf
SS15P3S-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Produkt ist nicht verfügbar
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SS15P3S-M3/87A ss15p3s.pdf
SS15P3S-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 6494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
14+1.29 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.72 EUR
2000+0.68 EUR
Mindestbestellmenge: 10
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P6SMB91CAHE3_A/I p6smb.pdf
P6SMB91CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Produkt ist nicht verfügbar
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P6SMB91CAHM3_A/H p6smb.pdf
P6SMB91CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Produkt ist nicht verfügbar
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P6SMB9.1CAHM3/I p6smb.pdf
P6SMB9.1CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Produkt ist nicht verfügbar
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P6SMB91CAHM3_A/I p6smb.pdf
P6SMB91CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Produkt ist nicht verfügbar
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P6SMB9.1CAHE3_A/I p6smb.pdf
P6SMB9.1CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Produkt ist nicht verfügbar
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P6SMB91CAHM3/H p6smb.pdf
P6SMB91CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Produkt ist nicht verfügbar
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P6SMB91CAHE3_A/H p6smb.pdf
P6SMB91CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Produkt ist nicht verfügbar
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P6SMB9.1CAHM3_A/H p6smb.pdf
P6SMB9.1CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Produkt ist nicht verfügbar
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P6SMB9.1CAHE3_A/H p6smb.pdf
P6SMB9.1CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Produkt ist nicht verfügbar
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P6SMB9.1CAHM3/H p6smb.pdf
P6SMB9.1CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Produkt ist nicht verfügbar
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P6SMB91CAHM3/I p6smb.pdf
P6SMB91CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB9.1CAHM3_A/I p6smb.pdf
P6SMB9.1CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Produkt ist nicht verfügbar
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BZX384C3V9-HG3-08
BZX384C3V9-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.095 EUR
6000+0.085 EUR
Mindestbestellmenge: 3000
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BZX384C3V9-HG3-08
BZX384C3V9-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
108+0.16 EUR
176+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 56
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TZM5248B-GS18 tzm5221.pdf
TZM5248B-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Produkt ist nicht verfügbar
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TZM5248B-GS18 tzm5221.pdf
TZM5248B-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 9753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
118+0.15 EUR
278+0.063 EUR
500+0.06 EUR
1000+0.055 EUR
2000+0.054 EUR
Mindestbestellmenge: 84
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VS-ETU1506-M3 vs-etu1506m3.pdf
VS-ETU1506-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 7980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
50+1.78 EUR
100+1.41 EUR
1000+0.97 EUR
5000+0.87 EUR
Mindestbestellmenge: 8
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VS-ETU1506-1HM3 vs-etu1506shm3.pdf
VS-ETU1506-1HM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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VS-ETU2006S2LHM3 vs-etu2006s2lhm3.pdf
VS-ETU2006S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FREDS - D2PAK
Produkt ist nicht verfügbar
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VS-E5TX1506FP-N3 vs-e5tx1506fp-n3.pdf
VS-E5TX1506FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
50+1.91 EUR
100+1.52 EUR
500+1.29 EUR
Mindestbestellmenge: 8
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VS-E5TW1206FP-N3 vs-e5tw1206fp-n3.pdf
VS-E5TW1206FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+2.2 EUR
100+1.72 EUR
500+1.42 EUR
1000+1.16 EUR
Mindestbestellmenge: 8
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VS-E5TH3006-M3 vs-e5th3006-m3.pdf
VS-E5TH3006-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
50+1.5 EUR
100+1.35 EUR
500+1.24 EUR
1000+1.15 EUR
2000+1.07 EUR
Mindestbestellmenge: 6
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VS-E5TW1506FP-N3 vs-e5tw1506fp-n3.pdf
VS-E5TW1506FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
50+1.46 EUR
100+1.32 EUR
500+1.08 EUR
1000+1 EUR
Mindestbestellmenge: 7
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VS-E5TH3012-M3 vs-e5th3012-m3.pdf
VS-E5TH3012-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 3965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
50+2.5 EUR
100+2.26 EUR
500+1.83 EUR
1000+1.69 EUR
2000+1.58 EUR
Mindestbestellmenge: 4
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VS-E5TX1206FP-N3 vs-e5tx1206fp-n3.pdf
VS-E5TX1206FP-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+2.2 EUR
100+1.72 EUR
500+1.42 EUR
1000+1.16 EUR
Mindestbestellmenge: 8
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VS-E5TH3012S2LHM3 vs-e5th3012s2lhm3.pdf
VS-E5TH3012S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TH3012S2LHM3 vs-e5th3012s2lhm3.pdf
VS-E5TH3012S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
10+4.08 EUR
100+2.99 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TH3006THN3 vs-e5th3006thn3.pdf
VS-E5TH3006THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
50+2.09 EUR
100+1.77 EUR
500+1.64 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3012S2LHM3 vs-e5tx3012s2lhm3.pdf
VS-E5TX3012S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.25 EUR
Mindestbestellmenge: 800
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VS-E5TX0812THN3 vs-e5tx0812thn3.pdf
VS-E5TX0812THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-220G5,8A,1200V, LOW Q
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX1512S2LHM3 vs-e5tx1512s2lhm3.pdf
VS-E5TX1512S2LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FREDS - D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3012THN3 vs-e5tx3012thn3.pdf
VS-E5TX3012THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TH0812THN3 vs-e5th0812hn3.pdf
VS-E5TH0812THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TH3012THN3 vs-e5th3012thn3.pdf
VS-E5TH3012THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E5TX1512THN3 vs-e5tx1512thn3.pdf
VS-E5TX1512THN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-220G5,15A,1200V, LOW
Produkt ist nicht verfügbar
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GMF05LC-HSF-GS08 gmf05lch.pdf
GMF05LC-HSF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
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GMF05LC-HSF-GS08 gmf05lch.pdf
GMF05LC-HSF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
auf Bestellung 12800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
19+0.95 EUR
100+0.71 EUR
500+0.56 EUR
1000+0.43 EUR
Mindestbestellmenge: 16
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VS-GT50YF120NT vs-gt50yf120nt.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ECONO - 4 PACK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 50 µA
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+157.04 EUR
12+142.53 EUR
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VS-GT75YF120UT vs-gt75yf120ut.pdf
VS-GT75YF120UT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ECONO - 4 PACK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+193.05 EUR
12+181.12 EUR
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VS-GT75YF120NT vs-gt75yf120nt.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ECONO - 4 PACK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+186.05 EUR
12+173.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TZM5261F-GS18
TZM5261F-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW SOD80
Produkt ist nicht verfügbar
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TZM5241F-GS18
TZM5241F-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Produkt ist nicht verfügbar
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TZM5243F-GS18
TZM5243F-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Produkt ist nicht verfügbar
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TZM5246F-GS18
TZM5246F-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD80
Produkt ist nicht verfügbar
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TZM5229F-GS18
TZM5229F-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD80
Produkt ist nicht verfügbar
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TZM5257F-GS08
TZM5257F-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Produkt ist nicht verfügbar
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TZM5262F-GS08
TZM5262F-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW SOD80
Produkt ist nicht verfügbar
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TZM5222F-GS08
TZM5222F-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW SOD80
Produkt ist nicht verfügbar
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