| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRFZ44STRLPBF | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFZ24PBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 68A |
auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFZ40PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFZ48PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 290A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFZ48RSPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 290A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFZ48SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 290A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFZ48STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 290A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BFC238330104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT Tolerance: ±5% Terminal pitch: 22.5mm Mounting: THT Climate class: 55/110/56 Leads: 2pin Body dimensions: 26x19.5x10mm Type of capacitor: polypropylene Capacitance: 0.1µF Operating voltage: 350V AC; 1kV DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BFC238330153 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT Tolerance: ±5% Terminal pitch: 15mm Mounting: THT Climate class: 55/110/56 Leads: 2pin Body dimensions: 17.5x11x5mm Type of capacitor: polypropylene Capacitance: 15nF Lead length: 3.5mm Operating voltage: 350V AC; 1kV DC |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRL540SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL540STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TS53YJ103MR10 | VISHAY |
Category: Single turn SMD trimmers Description: Potentiometer: mounting; 10kΩ; single turn; 250mW; SMD; ±20%; 200V Resistance: 10kΩ Mounting: SMD Power: 0.25W Tolerance: ±20% Operating voltage: 200V Body dimensions: 5x5x2.7mm Leads: YJ Track material: cermet Operating temperature: -55...155°C Mechanical rotation angle: 270 ±10° Characteristics: linear Kind of potentiometer: single turn Temperature coefficient: 100ppm/°C Torque: 1.5Ncm IP rating: IP67 Electrical rotation angle: 220 ±15° Type of potentiometer: mounting |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1.5KE82CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1400 Stücke Im Einkaufswagen Stück im Wert von UAH |
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GRC00DD1021CTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Ø10x16mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Body dimensions: Ø10x16mm Terminal pitch: 5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF540STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF540STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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GSC00AF2211VARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; Ø8x10mm; ±20%; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Body dimensions: Ø8x10mm Tolerance: ±20% Operating temperature: -55...105°C Height: 10mm Manufacturer series: GSC Nominal life: 2000h |
auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZX55C3V0-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
auf Bestellung 13400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF510STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF830ALPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 927 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF830ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF830BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF840LCLPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IRF840LCSPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF840STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFB13N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of channel: enhancement Pulsed drain current: 56A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF640PBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF640STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SI7852DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PE30L0FL472KAB | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear Resistance: 4.7kΩ Mounting: on panel Power: 3W Tolerance: ±10% Operating voltage: 300V Leads: for soldering Track material: cermet Operating temperature: -55...125°C Shaft diameter: 6mm Thread length: 12mm Mechanical rotation angle: 300 ±5° Characteristics: linear Kind of potentiometer: single turn Shaft length: 25mm Min. insulation resistance: 1TΩ Temperature coefficient: 150ppm/°C Potentiometer features: for industrial use; for military use Shaft surface: smooth IP rating: IP67 Electrical rotation angle: 270 ±10° Type of potentiometer: shaft |
auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SI2301CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MRS25000C2324FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm Mounting: THT Type of resistor: thin film Resistance: 2.32MΩ Length: 6.5mm Body dimensions: Ø2.5x6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Operating voltage: 350V Tolerance: ±1% Diameter: 2.5mm |
auf Bestellung 8540 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFR9024TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF9640LPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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CNY17-3X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 4.3µs Manufacturer series: CNY17 |
auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BFC233620473 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm Terminal pitch: 15mm Mounting: THT Kind of capacitor: X2 Climate class: 55/105/56 Leads: 2pin Body dimensions: 5x11x17.5mm Type of capacitor: polypropylene Capacitance: 47nF Lead length: 3.5mm Operating voltage: 310V AC; 630V DC Tolerance: ±20% |
auf Bestellung 5120 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TDCG1060M | VISHAY |
Category: 7-segment LED displays Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd Operating voltage: 2...2.4V Mounting: THT Type of display: LED Digit height: 10mm; 0.39" Colour: green Wavelength: 562...575nm Operating current: 20mA Kind of display: 7-segment Luminosity: 2.8...4mcd Dimensions: 40.2x12.8x7mm Number of characters: 4 Common electrode: cathode |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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T18105KT10 | VISHAY |
Category: 19mm multiturn THT trimmers Description: Potentiometer: mounting; 1MΩ; multiturn; 750mW; ±10%; linear Resistance: 1MΩ Mounting: THT Power: 0.75W Tolerance: ±10% Track material: cermet Operating temperature: -55...125°C Engineering PN: 43P; 89; 3006 Characteristics: linear Potentiometer standard: 19mm Kind of potentiometer: multiturn Min. insulation resistance: 1TΩ Temperature coefficient: 100ppm/°C IP rating: IP67 Type of potentiometer: mounting Number of electrical turns: 15 ±1 |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SI2301BDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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GRC00KK1022A00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; Ø18x40mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 100V DC Body dimensions: Ø18x40mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0603A101JXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 100V Tolerance: ±5% Mounting: SMD Operating temperature: -55...125°C Dielectric: C0G (NP0) Case - inch: 0603 Case - mm: 1608 |
auf Bestellung 1183 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805A101JXEAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 500V Tolerance: ±5% Mounting: SMD Operating temperature: -55...125°C Dielectric: C0G (NP0) Case - inch: 0805 Case - mm: 2012 |
auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VJ0603Y101KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.1nF Operating voltage: 50V Tolerance: ±10% Mounting: SMD Operating temperature: -55...125°C Dielectric: X7R Case - inch: 0603 Case - mm: 1608 Kind of capacitor: MLCC |
auf Bestellung 227659 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08050000Z0TABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0Ω; SMD; 0805; 0.125W; ±0%; CRCW0805; 150V Type of resistor: thick film Resistance: 0Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±0% Operating voltage: 150V Operating temperature: -55...155°C Manufacturer series: CRCW0805 |
auf Bestellung 164253 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIHP15N50E-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB Drain-source voltage: 500V Drain current: 14.5A Case: TO220AB Polarisation: unipolar On-state resistance: 0.28Ω Pulsed drain current: 28A Power dissipation: 156W Kind of channel: enhancement Gate charge: 66nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VJ1206A103JXATW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 50V Tolerance: ±5% Mounting: SMD Operating temperature: -55...125°C Case - inch: 1206 Case - mm: 3216 Dielectric: C0G (NP0) |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP065N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB Mounting: THT Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220AB On-state resistance: 65mΩ Power dissipation: 250W Gate charge: 98nC Polarisation: unipolar Drain current: 25A |
auf Bestellung 460 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08051K50FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1.5kΩ; SMD; 0805; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Resistance: 1.5kΩ Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Manufacturer series: CRCW0805 |
auf Bestellung 44684 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIP32431DNP3-T1GE4 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Mounting: SMD Case: TDFN4 Number of channels: 1 Kind of package: reel; tape Supply voltage: 1.5...5.5V DC Kind of output: P-Channel On-state resistance: 0.105Ω |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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SIP32431DR3-T1GE3 | VISHAY |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Mounting: SMD Case: SC70 Number of channels: 1 Kind of package: reel; tape Supply voltage: 1.5...5.5V DC Kind of output: P-Channel On-state resistance: 147mΩ |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL213659101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 100uF; 100VDC; Ø12.5x20mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 100µF Operating voltage: 100V DC Body dimensions: Ø12.5x20mm Tolerance: ±20% Operating temperature: -55...105°C Height: 20mm Diameter: 12.5mm Service life: 7000h Terminal pitch: 5mm |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC237065102 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 1nF; 220VAC; 400VDC; 5.08mm; ±10%; THT Operating temperature: -55...105°C Body dimensions: 7.2x6.5x2.5mm Type of capacitor: polyester Capacitance: 1nF Operating voltage: 220V AC; 400V DC Tolerance: ±10% Terminal pitch: 5.08mm Mounting: THT |
auf Bestellung 778 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE220CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 220V; 4.6A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 185V Breakdown voltage: 220V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Kind of package: 13 inch reel Technology: TransZorb® |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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T93XA103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear Type of potentiometer: mounting Resistance: 10kΩ Kind of potentiometer: multiturn Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93XA Track material: cermet Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64X; 67X; 3296X IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...125°C Operating voltage: 250V |
auf Bestellung 609 Stücke: Lieferzeit 14-21 Tag (e) |
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T93XA102KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; 1kΩ; multiturn; 500mW; THT; ±10%; linear Type of potentiometer: mounting Resistance: 1kΩ Kind of potentiometer: multiturn Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93XA Track material: cermet Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64X; 67X; 3296X IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...125°C Operating voltage: 250V |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFZ44STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IRFZ24PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFZ40PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IRFZ48PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFZ48RSPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IRFZ48SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFZ48STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 290A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| BFC238330104 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Tolerance: ±5%
Terminal pitch: 22.5mm
Mounting: THT
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Tolerance: ±5%
Terminal pitch: 22.5mm
Mounting: THT
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 26x19.5x10mm
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 350V AC; 1kV DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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| BFC238330153 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Tolerance: ±5%
Terminal pitch: 15mm
Mounting: THT
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Capacitance: 15nF
Lead length: 3.5mm
Operating voltage: 350V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Tolerance: ±5%
Terminal pitch: 15mm
Mounting: THT
Climate class: 55/110/56
Leads: 2pin
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Capacitance: 15nF
Lead length: 3.5mm
Operating voltage: 350V AC; 1kV DC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| IRL540SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRL540STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| TS53YJ103MR10 |
|
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 10kΩ; single turn; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Mounting: SMD
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Body dimensions: 5x5x2.7mm
Leads: YJ
Track material: cermet
Operating temperature: -55...155°C
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
IP rating: IP67
Electrical rotation angle: 220 ±15°
Type of potentiometer: mounting
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; 10kΩ; single turn; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Mounting: SMD
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Body dimensions: 5x5x2.7mm
Leads: YJ
Track material: cermet
Operating temperature: -55...155°C
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
IP rating: IP67
Electrical rotation angle: 220 ±15°
Type of potentiometer: mounting
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE82CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 1400 Stücke
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| GRC00DD1021CTNL |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Ø10x16mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Body dimensions: Ø10x16mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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| IRF540STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IRF540STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| GSC00AF2211VARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; Ø8x10mm; ±20%; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 10mm
Manufacturer series: GSC
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; Ø8x10mm; ±20%; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 10mm
Manufacturer series: GSC
Nominal life: 2000h
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX55C3V0-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 13400 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF510STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRF830ALPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF830ASPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF830ASTRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IRF830BPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840ASTRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IRF840LCLPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840LCSPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF840STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IRF9530STRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IRF9530STRRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| IRFB13N50APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Pulsed drain current: 56A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of channel: enhancement
Pulsed drain current: 56A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF640PBF-BE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF640STRRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| SI7852DP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| PE30L0FL472KAB |
|
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Mounting: on panel
Power: 3W
Tolerance: ±10%
Operating voltage: 300V
Leads: for soldering
Track material: cermet
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Mechanical rotation angle: 300 ±5°
Characteristics: linear
Kind of potentiometer: single turn
Shaft length: 25mm
Min. insulation resistance: 1TΩ
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
IP rating: IP67
Electrical rotation angle: 270 ±10°
Type of potentiometer: shaft
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 4.7kΩ; single turn; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Mounting: on panel
Power: 3W
Tolerance: ±10%
Operating voltage: 300V
Leads: for soldering
Track material: cermet
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Mechanical rotation angle: 300 ±5°
Characteristics: linear
Kind of potentiometer: single turn
Shaft length: 25mm
Min. insulation resistance: 1TΩ
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
IP rating: IP67
Electrical rotation angle: 270 ±10°
Type of potentiometer: shaft
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
| SI2301CDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| MRS25000C2324FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Resistance: 2.32MΩ
Length: 6.5mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
Tolerance: ±1%
Diameter: 2.5mm
Category: THT Resistors
Description: Resistor: thin film; 2.32MΩ; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Resistance: 2.32MΩ
Length: 6.5mm
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
Tolerance: ±1%
Diameter: 2.5mm
auf Bestellung 8540 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF9540STRRPBF |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR9024TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF9640LPBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CNY17-3X009T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
| BFC233620473 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Climate class: 55/105/56
Leads: 2pin
Body dimensions: 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Lead length: 3.5mm
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Climate class: 55/105/56
Leads: 2pin
Body dimensions: 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Lead length: 3.5mm
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
auf Bestellung 5120 Stücke:
Lieferzeit 14-21 Tag (e)
| TDCG1060M |
|
Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Type of display: LED
Digit height: 10mm; 0.39"
Colour: green
Wavelength: 562...575nm
Operating current: 20mA
Kind of display: 7-segment
Luminosity: 2.8...4mcd
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Common electrode: cathode
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Type of display: LED
Digit height: 10mm; 0.39"
Colour: green
Wavelength: 562...575nm
Operating current: 20mA
Kind of display: 7-segment
Luminosity: 2.8...4mcd
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Common electrode: cathode
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
| T18105KT10 |
|
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; 1MΩ; multiturn; 750mW; ±10%; linear
Resistance: 1MΩ
Mounting: THT
Power: 0.75W
Tolerance: ±10%
Track material: cermet
Operating temperature: -55...125°C
Engineering PN: 43P; 89; 3006
Characteristics: linear
Potentiometer standard: 19mm
Kind of potentiometer: multiturn
Min. insulation resistance: 1TΩ
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; 1MΩ; multiturn; 750mW; ±10%; linear
Resistance: 1MΩ
Mounting: THT
Power: 0.75W
Tolerance: ±10%
Track material: cermet
Operating temperature: -55...125°C
Engineering PN: 43P; 89; 3006
Characteristics: linear
Potentiometer standard: 19mm
Kind of potentiometer: multiturn
Min. insulation resistance: 1TΩ
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| SI2301BDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GRC00KK1022A00L |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; Ø18x40mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Body dimensions: Ø18x40mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; Ø18x40mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Body dimensions: Ø18x40mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| VJ0603A101JXBAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Tolerance: ±5%
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Case - inch: 0603
Case - mm: 1608
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Tolerance: ±5%
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Case - inch: 0603
Case - mm: 1608
auf Bestellung 1183 Stücke:
Lieferzeit 14-21 Tag (e)
| VJ0805A101JXEAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Tolerance: ±5%
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Case - inch: 0805
Case - mm: 2012
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Tolerance: ±5%
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Case - inch: 0805
Case - mm: 2012
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
| VJ0603Y101KXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Tolerance: ±10%
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: X7R
Case - inch: 0603
Case - mm: 1608
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Tolerance: ±10%
Mounting: SMD
Operating temperature: -55...125°C
Dielectric: X7R
Case - inch: 0603
Case - mm: 1608
Kind of capacitor: MLCC
auf Bestellung 227659 Stücke:
Lieferzeit 14-21 Tag (e)
| CRCW08050000Z0TABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0805; 0.125W; ±0%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±0%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0805; 0.125W; ±0%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±0%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
auf Bestellung 164253 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHP15N50E-BE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Drain-source voltage: 500V
Drain current: 14.5A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.28Ω
Pulsed drain current: 28A
Power dissipation: 156W
Kind of channel: enhancement
Gate charge: 66nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Drain-source voltage: 500V
Drain current: 14.5A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.28Ω
Pulsed drain current: 28A
Power dissipation: 156W
Kind of channel: enhancement
Gate charge: 66nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VJ1206A103JXATW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Tolerance: ±5%
Mounting: SMD
Operating temperature: -55...125°C
Case - inch: 1206
Case - mm: 3216
Dielectric: C0G (NP0)
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Tolerance: ±5%
Mounting: SMD
Operating temperature: -55...125°C
Case - inch: 1206
Case - mm: 3216
Dielectric: C0G (NP0)
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHP065N60E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 65mΩ
Power dissipation: 250W
Gate charge: 98nC
Polarisation: unipolar
Drain current: 25A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 65mΩ
Power dissipation: 250W
Gate charge: 98nC
Polarisation: unipolar
Drain current: 25A
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
| CRCW08051K50FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1.5kΩ; SMD; 0805; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 1.5kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
Category: SMD resistors
Description: Resistor: thick film; 1.5kΩ; SMD; 0805; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 1.5kΩ
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Manufacturer series: CRCW0805
auf Bestellung 44684 Stücke:
Lieferzeit 14-21 Tag (e)
| SIP32431DNP3-T1GE4 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Case: TDFN4
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
On-state resistance: 0.105Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Case: TDFN4
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
On-state resistance: 0.105Ω
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
| SIP32431DR3-T1GE3 |
|
Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Case: SC70
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
On-state resistance: 147mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Case: SC70
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Kind of output: P-Channel
On-state resistance: 147mΩ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| MAL213659101E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 100VDC; Ø12.5x20mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 100µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x20mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 20mm
Diameter: 12.5mm
Service life: 7000h
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 100VDC; Ø12.5x20mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: THT
Capacitance: 100µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x20mm
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 20mm
Diameter: 12.5mm
Service life: 7000h
Terminal pitch: 5mm
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
| BFC237065102 |
|
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 1nF; 220VAC; 400VDC; 5.08mm; ±10%; THT
Operating temperature: -55...105°C
Body dimensions: 7.2x6.5x2.5mm
Type of capacitor: polyester
Capacitance: 1nF
Operating voltage: 220V AC; 400V DC
Tolerance: ±10%
Terminal pitch: 5.08mm
Mounting: THT
Category: THT Film Capacitors
Description: Capacitor: polyester; 1nF; 220VAC; 400VDC; 5.08mm; ±10%; THT
Operating temperature: -55...105°C
Body dimensions: 7.2x6.5x2.5mm
Type of capacitor: polyester
Capacitance: 1nF
Operating voltage: 220V AC; 400V DC
Tolerance: ±10%
Terminal pitch: 5.08mm
Mounting: THT
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE220CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 220V; 4.6A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 185V
Breakdown voltage: 220V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 220V; 4.6A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 185V
Breakdown voltage: 220V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Technology: TransZorb®
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| T93XA103KT20 |
|
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XA
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64X; 67X; 3296X
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 10kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 10kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XA
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64X; 67X; 3296X
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)
| T93XA102KT20 |
|
Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 1kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 1kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XA
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64X; 67X; 3296X
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 1kΩ; multiturn; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Resistance: 1kΩ
Kind of potentiometer: multiturn
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XA
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64X; 67X; 3296X
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)