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WMM11N70C2 WMM11N70C2 WAYON WMx11N70C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM120N04TS WAYON WMM120N04TS-CYG SMD N channel transistors
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.95 EUR
81+0.89 EUR
104+0.69 EUR
1600+0.43 EUR
Mindestbestellmenge: 76
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WMM120P06TS WAYON WMM120P06TS-CYG SMD P channel transistors
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
62+1.16 EUR
65+1.1 EUR
1600+1.06 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
WMM12N80M3 WMM12N80M3 WAYON WMx12N80M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 620mΩ
Drain current: 12A
Power dissipation: 86W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: WMOS™ M3
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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WMM130N20JN WAYON WMx130N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
Produkt ist nicht verfügbar
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WMM13N80M3 WAYON WMM13N80M3-CYG SMD N channel transistors
auf Bestellung 575 Stücke:
Lieferzeit 7-14 Tag (e)
92+0.79 EUR
95+0.75 EUR
101+0.71 EUR
105+0.69 EUR
Mindestbestellmenge: 92
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WMM14N60C2 WMM14N60C2 WAYON WMx14N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 11 Stücke:
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11+6.51 EUR
Mindestbestellmenge: 11
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WMM14N60C2 WMM14N60C2 WAYON WMx14N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
25+2.86 EUR
100+0.72 EUR
800+0.48 EUR
Mindestbestellmenge: 11
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WMM14N65C4 WAYON WMx14N65C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM14N70C2 WMM14N70C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
85+0.84 EUR
93+0.77 EUR
103+0.7 EUR
Mindestbestellmenge: 75
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WMM14N70C2 WMM14N70C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
75+0.96 EUR
85+0.84 EUR
93+0.77 EUR
103+0.7 EUR
800+0.66 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
WMM15N60C4 WMM15N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
58+1.24 EUR
68+1.06 EUR
76+0.94 EUR
100+0.87 EUR
250+0.83 EUR
Mindestbestellmenge: 52
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WMM15N60C4 WMM15N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.4 EUR
58+1.24 EUR
68+1.06 EUR
76+0.94 EUR
100+0.87 EUR
250+0.83 EUR
500+0.77 EUR
Mindestbestellmenge: 52
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WMM15N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM161N15T2 WMM161N15T2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
23+3.25 EUR
25+2.86 EUR
Mindestbestellmenge: 21
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WMM161N15T2 WMM161N15T2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.43 EUR
23+3.25 EUR
25+2.86 EUR
100+2.57 EUR
800+2.55 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMM16N60FD WMM16N60FD WAYON WMx16N60FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
57+1.26 EUR
63+1.14 EUR
100+1.07 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
WMM16N60FD WMM16N60FD WAYON WMx16N60FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
51+1.42 EUR
57+1.26 EUR
63+1.14 EUR
100+1.07 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
WMM16N70C2 WMM16N70C2 WAYON WMx16N70C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM180N03TS WMM180N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.03 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMM180N03TS WMM180N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.03 EUR
100+0.72 EUR
800+0.4 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMM18N20JN WAYON WMx18N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns
Case: TO263
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
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WMM190N03TS WAYON WMM190N03TS-CYG SMD N channel transistors
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
79+0.9 EUR
105+0.69 EUR
1600+0.42 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMM20N20JN WAYON WMM20N20JN-CYG SMD N channel transistors
auf Bestellung 590 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.95 EUR
167+0.43 EUR
176+0.41 EUR
1600+0.4 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
WMM20N60C2 WMM20N60C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM220N20HG3 WAYON WMM220N20HG3-CYG SMD N channel transistors
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
16+4.46 EUR
1600+2.77 EUR
Mindestbestellmenge: 11
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WMM240P10HG4 WAYON WMM240P10HG4-CYG SMD P channel transistors
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
51+1.4 EUR
1600+0.87 EUR
Mindestbestellmenge: 22
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WMM25N80M3 WAYON WMM25N80M3-CYG SMD N channel transistors
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.19 EUR
29+2.49 EUR
31+2.36 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60C4 WMM26N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
35+2.07 EUR
41+1.74 EUR
46+1.57 EUR
100+1.44 EUR
250+1.39 EUR
500+1.27 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60C4 WMM26N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 780 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.32 EUR
35+2.07 EUR
41+1.74 EUR
46+1.57 EUR
100+1.44 EUR
250+1.39 EUR
500+1.27 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60F2 WMM26N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
37+1.96 EUR
44+1.64 EUR
49+1.49 EUR
100+1.42 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60F2 WMM26N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 796 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
37+1.96 EUR
44+1.64 EUR
49+1.49 EUR
100+1.42 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60FD WMM26N60FD WAYON WMx26N60FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N65FD WMM26N65FD WAYON WMx26N65FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM28N60C4 WMM28N60C4 WAYON WMx28N60C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
41+1.76 EUR
45+1.62 EUR
47+1.54 EUR
100+1.44 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMM28N60C4 WMM28N60C4 WAYON WMx28N60C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
41+1.76 EUR
45+1.62 EUR
47+1.54 EUR
100+1.44 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMM340N20HG2 WMM340N20HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMM340N20HG2 WMM340N20HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
5+14.3 EUR
25+2.86 EUR
100+1.27 EUR
800+1.23 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMM36N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM36N65F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM38N60C2 WMM38N60C2 WAYON WMx38N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.67 EUR
29+2.47 EUR
50+2.36 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMM38N60C2 WMM38N60C2 WAYON WMx38N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.67 EUR
29+2.47 EUR
50+2.36 EUR
100+2.33 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMM40N20JN WAYON WMx40N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM4N90D1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 65W
Technology: WMOS™ D1
Gate charge: 26nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM4N90D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 63W
Technology: WMOS™ D1
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM50P04T1 WAYON WMM50P04T1-CYG SMD P channel transistors
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.27 EUR
106+0.67 EUR
1600+0.42 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
WMM53N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM6N90D1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 86.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM6N90D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM80N08TS WAYON WMM80N08TS-CYG SMD N channel transistors
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.23 EUR
72+0.99 EUR
1600+0.66 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMM90N08TS WAYON WMM90N08TS-CYG SMD N channel transistors
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
81+0.89 EUR
1600+0.72 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
WMM95P06TS WAYON WMM95P06TS-CYG SMD P channel transistors
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
62+1.16 EUR
1600+0.83 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMMB015N08HGS WMMB015N08HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMMB020N10HG4 WMMB020N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.55 EUR
30+2.4 EUR
34+2.12 EUR
100+1.9 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMMB020N10HG4 WMMB020N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.55 EUR
30+2.4 EUR
34+2.12 EUR
100+1.9 EUR
800+1.84 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMN06N80M3 WMN06N80M3 WAYON WMx06N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN07N60C2 WMN07N60C2 WAYON WMK07N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN07N65C2 WMN07N65C2 WAYON WMK07N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN07N70C2 WMN07N70C2 WAYON WMK07N70C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN07N80M3 WMN07N80M3 WAYON WMx07N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM11N70C2 WMx11N70C2.pdf
WMM11N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM120N04TS
Hersteller: WAYON
WMM120N04TS-CYG SMD N channel transistors
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
76+0.95 EUR
81+0.89 EUR
104+0.69 EUR
1600+0.43 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
WMM120P06TS
Hersteller: WAYON
WMM120P06TS-CYG SMD P channel transistors
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
52+1.39 EUR
62+1.16 EUR
65+1.1 EUR
1600+1.06 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
WMM12N80M3 WMx12N80M3.pdf
WMM12N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 620mΩ
Drain current: 12A
Power dissipation: 86W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: WMOS™ M3
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM130N20JN WMx130N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM13N80M3
Hersteller: WAYON
WMM13N80M3-CYG SMD N channel transistors
auf Bestellung 575 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
92+0.79 EUR
95+0.75 EUR
101+0.71 EUR
105+0.69 EUR
Mindestbestellmenge: 92
Im Einkaufswagen  Stück im Wert von  UAH
WMM14N60C2 WMx14N60C2.pdf
WMM14N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMM14N60C2 WMx14N60C2.pdf
WMM14N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.51 EUR
25+2.86 EUR
100+0.72 EUR
800+0.48 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMM14N65C4 WMx14N65C4.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM14N70C2
WMM14N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
85+0.84 EUR
93+0.77 EUR
103+0.7 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
WMM14N70C2
WMM14N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
75+0.96 EUR
85+0.84 EUR
93+0.77 EUR
103+0.7 EUR
800+0.66 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
WMM15N60C4
WMM15N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
58+1.24 EUR
68+1.06 EUR
76+0.94 EUR
100+0.87 EUR
250+0.83 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
WMM15N60C4
WMM15N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
52+1.4 EUR
58+1.24 EUR
68+1.06 EUR
76+0.94 EUR
100+0.87 EUR
250+0.83 EUR
500+0.77 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
WMM15N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM161N15T2
WMM161N15T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
23+3.25 EUR
25+2.86 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMM161N15T2
WMM161N15T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.43 EUR
23+3.25 EUR
25+2.86 EUR
100+2.57 EUR
800+2.55 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMM16N60FD WMx16N60FD.pdf
WMM16N60FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
63+1.14 EUR
100+1.07 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
WMM16N60FD WMx16N60FD.pdf
WMM16N60FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
63+1.14 EUR
100+1.07 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
WMM16N70C2 WMx16N70C2.pdf
WMM16N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM180N03TS
WMM180N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.03 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMM180N03TS
WMM180N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
69+1.03 EUR
100+0.72 EUR
800+0.4 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMM18N20JN WMx18N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO263; 80ns
Case: TO263
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM190N03TS
Hersteller: WAYON
WMM190N03TS-CYG SMD N channel transistors
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
74+0.97 EUR
79+0.9 EUR
105+0.69 EUR
1600+0.42 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMM20N20JN
Hersteller: WAYON
WMM20N20JN-CYG SMD N channel transistors
auf Bestellung 590 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
76+0.95 EUR
167+0.43 EUR
176+0.41 EUR
1600+0.4 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
WMM20N60C2
WMM20N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM220N20HG3
Hersteller: WAYON
WMM220N20HG3-CYG SMD N channel transistors
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.51 EUR
16+4.46 EUR
1600+2.77 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMM240P10HG4
Hersteller: WAYON
WMM240P10HG4-CYG SMD P channel transistors
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.25 EUR
51+1.4 EUR
1600+0.87 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WMM25N80M3
Hersteller: WAYON
WMM25N80M3-CYG SMD N channel transistors
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.19 EUR
29+2.49 EUR
31+2.36 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60C4
WMM26N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
35+2.07 EUR
41+1.74 EUR
46+1.57 EUR
100+1.44 EUR
250+1.39 EUR
500+1.27 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60C4
WMM26N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 780 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.32 EUR
35+2.07 EUR
41+1.74 EUR
46+1.57 EUR
100+1.44 EUR
250+1.39 EUR
500+1.27 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60F2
WMM26N60F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
37+1.96 EUR
44+1.64 EUR
49+1.49 EUR
100+1.42 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60F2
WMM26N60F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 796 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
33+2.2 EUR
37+1.96 EUR
44+1.64 EUR
49+1.49 EUR
100+1.42 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60FD WMx26N60FD.pdf
WMM26N60FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N65FD WMx26N65FD.pdf
WMM26N65FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM28N60C4 WMx28N60C4.pdf
WMM28N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
41+1.76 EUR
45+1.62 EUR
47+1.54 EUR
100+1.44 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMM28N60C4 WMx28N60C4.pdf
WMM28N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.94 EUR
41+1.76 EUR
45+1.62 EUR
47+1.54 EUR
100+1.44 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMM340N20HG2
WMM340N20HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMM340N20HG2
WMM340N20HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
5+14.3 EUR
25+2.86 EUR
100+1.27 EUR
800+1.23 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMM36N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM36N65F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM38N60C2 WMx38N60C2.pdf
WMM38N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.67 EUR
29+2.47 EUR
50+2.36 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMM38N60C2 WMx38N60C2.pdf
WMM38N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.67 EUR
29+2.47 EUR
50+2.36 EUR
100+2.33 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMM40N20JN WMx40N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM4N90D1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 65W
Technology: WMOS™ D1
Gate charge: 26nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM4N90D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 63W
Technology: WMOS™ D1
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM50P04T1
Hersteller: WAYON
WMM50P04T1-CYG SMD P channel transistors
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
56+1.27 EUR
106+0.67 EUR
1600+0.42 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
WMM53N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM6N90D1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 86.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM6N90D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM80N08TS
Hersteller: WAYON
WMM80N08TS-CYG SMD N channel transistors
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
59+1.23 EUR
72+0.99 EUR
1600+0.66 EUR
Mindestbestellmenge: 59
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WMM90N08TS
Hersteller: WAYON
WMM90N08TS-CYG SMD N channel transistors
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.19 EUR
81+0.89 EUR
1600+0.72 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
WMM95P06TS
Hersteller: WAYON
WMM95P06TS-CYG SMD P channel transistors
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
59+1.22 EUR
62+1.16 EUR
1600+0.83 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMMB015N08HGS
WMMB015N08HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMMB020N10HG4
WMMB020N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
30+2.4 EUR
34+2.12 EUR
100+1.9 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMMB020N10HG4
WMMB020N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.55 EUR
30+2.4 EUR
34+2.12 EUR
100+1.9 EUR
800+1.84 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMN06N80M3 WMx06N80M3.pdf
WMN06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN07N60C2 WMK07N60C2.pdf
WMN07N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMN07N65C2 WMK07N65C2.pdf
WMN07N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMN07N70C2 WMK07N70C2.pdf
WMN07N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN07N80M3 WMx07N80M3.pdf
WMN07N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Produkt ist nicht verfügbar
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