| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WML11N80M3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 525 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML125N12LG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 22A Pulsed drain current: 140A Power dissipation: 30.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML125N12LG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 22A Pulsed drain current: 140A Power dissipation: 30.5W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| WML12N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 18A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML12N80M3 | WAYON | WML12N80M3-CYG THT N channel transistors |
auf Bestellung 531 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| WML13N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Pulsed drain current: 25A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 9.6nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WML13N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML13N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML13N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML13N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 452 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML14N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML14N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 249 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML14N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML14N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 26A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML14N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 11A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML14N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 11A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 331 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML14N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 13nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML15N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Pulsed drain current: 60A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 526 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML15N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Pulsed drain current: 60A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 370mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 526 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML15N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 14.6nC Pulsed drain current: 26A |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML15N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 14.6nC Pulsed drain current: 26A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 111 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML15N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 26A Gate-source voltage: ±30V Gate charge: 14.6nC Drain current: 7.8A Power dissipation: 31W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML15N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.8A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 14.6nC Pulsed drain current: 26A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML15N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML15N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 145 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML16N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML16N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML16N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.4A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19.5nC Pulsed drain current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML16N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML16N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML16N70SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 31W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 700V Drain current: 8.4A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19.5nC Pulsed drain current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML18N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 18A Pulsed drain current: 72A Power dissipation: 20.2W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 540 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML18N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 18A Pulsed drain current: 72A Power dissipation: 20.2W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 540 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| WML18N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP Case: TO220FP Mounting: THT Reverse recovery time: 80ns On-state resistance: 135mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 36W Pulsed drain current: 39A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 7.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WML18N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 50A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML18N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 18A Pulsed drain current: 72A Power dissipation: 44.6W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WML20N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 27W; TO220FP Case: TO220FP Mounting: THT Gate-source voltage: ±20V Gate charge: 4.1nC Reverse recovery time: 110ns On-state resistance: 80mΩ Drain current: 12A Power dissipation: 27W Pulsed drain current: 60A Drain-source voltage: 200V Kind of package: tube Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML20N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML20N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML22N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 14.6nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML25N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML25N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML25N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A Gate-source voltage: ±30V Gate charge: 36nC Drain current: 13A Power dissipation: 34W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WML25N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 334 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML25N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 334 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML26N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 436 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML26N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 436 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML26N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML26N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML26N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML26N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML26N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 277 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| WML26N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 50A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 198mΩ Mounting: THT Gate charge: 34.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML26N70SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 12A; Idm: 50A; 34W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 198mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34.7nC Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML28N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 85A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WML28N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML28N60C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 87 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML28N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
WML28N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
WML28N65C4 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 65A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WML11N80M3 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 525 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 67+ | 1.07 EUR |
| 71+ | 1.02 EUR |
| 500+ | 0.97 EUR |
| WML125N12LG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 30.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 30.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.83 EUR |
| WML125N12LG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 30.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 22A; Idm: 140A; 30.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 30.5W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.83 EUR |
| 40+ | 1.79 EUR |
| 2000+ | 1.06 EUR |
| WML12N100C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 4A; Idm: 18A; 35W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 18A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML12N80M3 |
Hersteller: WAYON
WML12N80M3-CYG THT N channel transistors
WML12N80M3-CYG THT N channel transistors
auf Bestellung 531 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 58+ | 1.24 EUR |
| 61+ | 1.17 EUR |
| 500+ | 1.14 EUR |
| WML13N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 9.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML13N50D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML13N50D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML13N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 40+ | 1.82 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| WML13N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 452 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 40+ | 1.82 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 1000+ | 1.3 EUR |
| WML14N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 52+ | 1.4 EUR |
| 61+ | 1.17 EUR |
| 69+ | 1.04 EUR |
| 100+ | 0.97 EUR |
| WML14N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 249 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 52+ | 1.4 EUR |
| 61+ | 1.17 EUR |
| 69+ | 1.04 EUR |
| 100+ | 0.97 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.84 EUR |
| WML14N65C4 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 68+ | 1.06 EUR |
| 77+ | 0.93 EUR |
| 100+ | 0.83 EUR |
| WML14N65C4 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 68+ | 1.06 EUR |
| 77+ | 0.93 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.82 EUR |
| WML14N70C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 73+ | 0.99 EUR |
| 74+ | 0.97 EUR |
| 81+ | 0.89 EUR |
| WML14N70C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 73+ | 0.99 EUR |
| 74+ | 0.97 EUR |
| 81+ | 0.89 EUR |
| WML14N70C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML15N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 526 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 129+ | 0.56 EUR |
| 170+ | 0.42 EUR |
| 250+ | 0.37 EUR |
| 500+ | 0.32 EUR |
| WML15N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 526 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 129+ | 0.56 EUR |
| 170+ | 0.42 EUR |
| 250+ | 0.37 EUR |
| 500+ | 0.32 EUR |
| WML15N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 68+ | 1.06 EUR |
| 76+ | 0.95 EUR |
| 100+ | 0.89 EUR |
| WML15N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 111 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 68+ | 1.06 EUR |
| 76+ | 0.95 EUR |
| 100+ | 0.89 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.77 EUR |
| WML15N65C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate-source voltage: ±30V
Gate charge: 14.6nC
Drain current: 7.8A
Power dissipation: 31W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate-source voltage: ±30V
Gate charge: 14.6nC
Drain current: 7.8A
Power dissipation: 31W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML15N70C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.8A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML15N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 36+ | 2.03 EUR |
| 37+ | 1.97 EUR |
| 39+ | 1.84 EUR |
| 100+ | 1.79 EUR |
| WML15N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 36+ | 2.03 EUR |
| 37+ | 1.97 EUR |
| 39+ | 1.84 EUR |
| 100+ | 1.79 EUR |
| WML16N60FD |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML16N65FD |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML16N65SR |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML16N70C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 65+ | 1.1 EUR |
| 67+ | 1.07 EUR |
| 74+ | 0.97 EUR |
| WML16N70C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 65+ | 1.1 EUR |
| 67+ | 1.07 EUR |
| 74+ | 0.97 EUR |
| WML16N70SR |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML18N06TS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 186+ | 0.39 EUR |
| 222+ | 0.32 EUR |
| 252+ | 0.28 EUR |
| 266+ | 0.27 EUR |
| WML18N06TS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 540 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 186+ | 0.39 EUR |
| 222+ | 0.32 EUR |
| 252+ | 0.28 EUR |
| 266+ | 0.27 EUR |
| 2000+ | 0.26 EUR |
| WML18N20JN |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML18N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML18N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML20N20JN |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 27W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 4.1nC
Reverse recovery time: 110ns
On-state resistance: 80mΩ
Drain current: 12A
Power dissipation: 27W
Pulsed drain current: 60A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 27W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 4.1nC
Reverse recovery time: 110ns
On-state resistance: 80mΩ
Drain current: 12A
Power dissipation: 27W
Pulsed drain current: 60A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML20N50D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML20N65EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML22N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML25N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML25N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML25N65EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate-source voltage: ±30V
Gate charge: 36nC
Drain current: 13A
Power dissipation: 34W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate-source voltage: ±30V
Gate charge: 36nC
Drain current: 13A
Power dissipation: 34W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML25N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.15 EUR |
| 26+ | 2.85 EUR |
| 27+ | 2.66 EUR |
| 29+ | 2.5 EUR |
| 100+ | 2.42 EUR |
| WML25N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.15 EUR |
| 26+ | 2.85 EUR |
| 27+ | 2.66 EUR |
| 29+ | 2.5 EUR |
| 100+ | 2.42 EUR |
| WML26N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 436 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 30+ | 2.39 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.8 EUR |
| 100+ | 1.67 EUR |
| 250+ | 1.6 EUR |
| WML26N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 436 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 30+ | 2.39 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.8 EUR |
| 100+ | 1.67 EUR |
| 250+ | 1.6 EUR |
| 500+ | 1.44 EUR |
| WML26N60F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.2 EUR |
| 37+ | 1.96 EUR |
| 44+ | 1.64 EUR |
| 49+ | 1.49 EUR |
| WML26N60F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.2 EUR |
| 37+ | 1.96 EUR |
| 44+ | 1.64 EUR |
| 49+ | 1.49 EUR |
| 100+ | 1.37 EUR |
| 250+ | 1.3 EUR |
| 500+ | 1.2 EUR |
| WML26N60FD |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML26N65C4 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 40+ | 1.79 EUR |
| 46+ | 1.57 EUR |
| 100+ | 1.43 EUR |
| WML26N65C4 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 40+ | 1.79 EUR |
| 46+ | 1.57 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.37 EUR |
| WML26N65SR |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML26N70SR |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34.7nC
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34.7nC
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML28N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML28N60C4 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 31+ | 2.33 EUR |
| 37+ | 1.96 EUR |
| 41+ | 1.76 EUR |
| WML28N60C4 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 31+ | 2.33 EUR |
| 37+ | 1.96 EUR |
| 41+ | 1.76 EUR |
| 100+ | 1.63 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.43 EUR |
| WML28N60F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.69 EUR |
| 30+ | 2.4 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.82 EUR |
| WML28N60F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.69 EUR |
| 30+ | 2.4 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.82 EUR |
| 100+ | 1.69 EUR |
| 250+ | 1.62 EUR |
| 500+ | 1.49 EUR |
| WML28N65C4 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.25 EUR |
| 36+ | 2.02 EUR |
| 40+ | 1.79 EUR |
| 100+ | 1.6 EUR |












