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WMJ90N65SR WMJ90N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.12 EUR
9+8.44 EUR
10+8.07 EUR
30+7.25 EUR
120+6.88 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR WMJ90N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.12 EUR
9+8.44 EUR
10+8.07 EUR
30+7.25 EUR
120+6.88 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4 WMJ99N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.26 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4 WMJ99N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.26 EUR
10+13.7 EUR
30+12.4 EUR
120+11.41 EUR
300+10.87 EUR
900+10.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2 WMJ99N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.23 EUR
4+20.22 EUR
10+15.12 EUR
30+13.58 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2 WMJ99N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
3+25.23 EUR
4+20.22 EUR
10+15.12 EUR
30+13.58 EUR
120+12.61 EUR
300+12.07 EUR
900+11.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1 WMJ9N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Gate charge: 85.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.1 EUR
9+8.87 EUR
11+6.65 EUR
30+5.98 EUR
120+5.53 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1 WMJ9N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Gate charge: 85.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.1 EUR
9+8.87 EUR
11+6.65 EUR
30+5.98 EUR
120+5.53 EUR
300+5.29 EUR
900+5.03 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1 WMJP32N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.71 EUR
16+4.56 EUR
21+3.42 EUR
25+3.07 EUR
125+2.85 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1 WMJP32N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 292 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.71 EUR
16+4.56 EUR
21+3.42 EUR
25+3.07 EUR
125+2.85 EUR
300+2.83 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK020N06HG4 WMK020N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK023N08HGS WAYON WMK023N08HGS-CYG THT N channel transistors
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.9 EUR
51+1.4 EUR
2000+1.24 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N08HGD WAYON WMK028N08HGD-CYG THT N channel transistors
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
17+4.2 EUR
46+1.56 EUR
2000+0.94 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HG2 WMK028N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS WMK028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
46+1.57 EUR
52+1.39 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS WMK028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.64 EUR
46+1.57 EUR
52+1.39 EUR
250+1.24 EUR
1000+1.2 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4 WMK030N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
75+0.95 EUR
85+0.85 EUR
250+0.76 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4 WMK030N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 330 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
75+0.95 EUR
85+0.85 EUR
250+0.76 EUR
1000+0.73 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06LG4 WMK030N06LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS WAYON WMK036N12HGS-CYG THT N channel transistors
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
57+1.26 EUR
60+1.2 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS WMK043N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
72+1 EUR
82+0.88 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS WMK043N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
72+1 EUR
82+0.88 EUR
250+0.79 EUR
1000+0.76 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10LGS WMK043N10LGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4 WMK048NV6HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4 WMK048NV6HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4 WMK048NV6LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4 WMK048NV6LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS WMK053N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
97+0.74 EUR
115+0.62 EUR
250+0.56 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS WMK053N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 540 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
97+0.74 EUR
115+0.62 EUR
250+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053NV8HGS WAYON WMK053NV8HGS-CYG THT N channel transistors
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
119+0.6 EUR
2000+0.53 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK05N80M3 WAYON WMK05N80M3-CYG THT N channel transistors
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.81 EUR
116+0.62 EUR
123+0.58 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N08HG2 WAYON WMK060N08HG2-CYG THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.39 EUR
68+1.06 EUR
2000+0.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N10LGS WAYON WMK060N10LGS-CYG THT N channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
22+3.25 EUR
58+1.23 EUR
2000+0.75 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMK06N80M3 WMK06N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
80+0.9 EUR
100+0.72 EUR
132+0.54 EUR
148+0.48 EUR
250+0.45 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK06N80M3 WMK06N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
80+0.9 EUR
100+0.72 EUR
132+0.54 EUR
148+0.48 EUR
250+0.45 EUR
500+0.42 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK071N15HG2 WMK071N15HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 135A; Idm: 540A; 255W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 135A
Pulsed drain current: 540A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.3 EUR
23+3.13 EUR
50+2.76 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WMK072N12HG2 WAYON WMK072N12HG2-CYG THT N channel transistors
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
14+5.11 EUR
39+1.83 EUR
2000+1.1 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK072N12LG2 WAYON WMK072N12LG2-CYG THT N channel transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.75 EUR
35+2.04 EUR
2000+1.22 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N60C2 WMK07N60C2 WAYON WMK07N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N65C2 WMK07N65C2 WAYON WMK07N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
71+1.02 EUR
90+0.8 EUR
119+0.6 EUR
133+0.54 EUR
250+0.5 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N65C2 WMK07N65C2 WAYON WMK07N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 470 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
71+1.02 EUR
90+0.8 EUR
119+0.6 EUR
133+0.54 EUR
250+0.5 EUR
500+0.48 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N80M3 WMK07N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK080N10LG2 WMK080N10LG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.59 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK080N10LG2 WMK080N10LG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.59 EUR
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK08N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F037B1162360DF&compId=WMx08N20JN.pdf?ci_sign=d09931e1b9e4e12e644ccf3703a5c8571fd427b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 24A; 31W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 3.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK08N80M3 WMK08N80M3 WAYON WMx08N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK099N10HGS WAYON WMK099N10HGS-CYG THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
82+0.87 EUR
2000+0.52 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK099N10LGS WAYON WMK099N10LGS-CYG THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
71+1 EUR
2000+0.61 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK09N60C2 WMK09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB96FF4996A0C4&compId=WMK09N60C2.pdf?ci_sign=f97a5882064f47d4725c3b36f729e0b42c4e931b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
67+1.07 EUR
85+0.85 EUR
112+0.64 EUR
125+0.58 EUR
250+0.53 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
WMK09N60C2 WMK09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB96FF4996A0C4&compId=WMK09N60C2.pdf?ci_sign=f97a5882064f47d4725c3b36f729e0b42c4e931b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.29 EUR
67+1.07 EUR
85+0.85 EUR
112+0.64 EUR
125+0.58 EUR
250+0.53 EUR
500+0.51 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N07TS WMK100N07TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
94+0.77 EUR
113+0.64 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N07TS WMK100N07TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 220 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
94+0.77 EUR
113+0.64 EUR
250+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N10TS WMK100N10TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N10TS WMK100N10TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
50+1.43 EUR
250+1.19 EUR
1000+1.16 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N70C2 WMK10N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBBE6561F0E0C4&compId=WMx10N70C2.pdf?ci_sign=7d2406cf9166ebde6c96098c8529a41344f7a76e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N80M3 WMK10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
34+2.12 EUR
43+1.69 EUR
57+1.27 EUR
100+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N80M3 WMK10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.52 EUR
34+2.12 EUR
43+1.69 EUR
57+1.27 EUR
100+1.13 EUR
250+1.04 EUR
500+1 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK110N20HG2 WMK110N20HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.75 EUR
14+5.43 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK110N20HG2 WMK110N20HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.75 EUR
14+5.43 EUR
50+4.82 EUR
250+4.32 EUR
1000+4.18 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK115N15HG4 WAYON WMK115N15HG4-CYG THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.39 EUR
34+2.1 EUR
2000+1.27 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR
WMJ90N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.12 EUR
9+8.44 EUR
10+8.07 EUR
30+7.25 EUR
120+6.88 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR
WMJ90N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.12 EUR
9+8.44 EUR
10+8.07 EUR
30+7.25 EUR
120+6.88 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4
WMJ99N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.26 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4
WMJ99N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.26 EUR
10+13.7 EUR
30+12.4 EUR
120+11.41 EUR
300+10.87 EUR
900+10.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2
WMJ99N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.23 EUR
4+20.22 EUR
10+15.12 EUR
30+13.58 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2
WMJ99N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+25.23 EUR
4+20.22 EUR
10+15.12 EUR
30+13.58 EUR
120+12.61 EUR
300+12.07 EUR
900+11.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1
WMJ9N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Gate charge: 85.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.1 EUR
9+8.87 EUR
11+6.65 EUR
30+5.98 EUR
120+5.53 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1
WMJ9N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Gate charge: 85.2nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.1 EUR
9+8.87 EUR
11+6.65 EUR
30+5.98 EUR
120+5.53 EUR
300+5.29 EUR
900+5.03 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1
WMJP32N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.71 EUR
16+4.56 EUR
21+3.42 EUR
25+3.07 EUR
125+2.85 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1
WMJP32N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 292 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.71 EUR
16+4.56 EUR
21+3.42 EUR
25+3.07 EUR
125+2.85 EUR
300+2.83 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK020N06HG4
WMK020N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK023N08HGS
Hersteller: WAYON
WMK023N08HGS-CYG THT N channel transistors
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.9 EUR
51+1.4 EUR
2000+1.24 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N08HGD
Hersteller: WAYON
WMK028N08HGD-CYG THT N channel transistors
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.15 EUR
17+4.2 EUR
46+1.56 EUR
2000+0.94 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HG2
WMK028N10HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS
WMK028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
46+1.57 EUR
52+1.39 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS
WMK028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.64 EUR
46+1.57 EUR
52+1.39 EUR
250+1.24 EUR
1000+1.2 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4
WMK030N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
75+0.95 EUR
85+0.85 EUR
250+0.76 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4
WMK030N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 330 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
71+1.02 EUR
75+0.95 EUR
85+0.85 EUR
250+0.76 EUR
1000+0.73 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06LG4
WMK030N06LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS
Hersteller: WAYON
WMK036N12HGS-CYG THT N channel transistors
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.83 EUR
57+1.26 EUR
60+1.2 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS
WMK043N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
72+1 EUR
82+0.88 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS
WMK043N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
69+1.04 EUR
72+1 EUR
82+0.88 EUR
250+0.79 EUR
1000+0.76 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10LGS
WMK043N10LGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4
WMK048NV6HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4
WMK048NV6HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+5.96 EUR
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4
WMK048NV6LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4
WMK048NV6LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS
WMK053N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
97+0.74 EUR
115+0.62 EUR
250+0.56 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS
WMK053N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 540 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
74+0.97 EUR
97+0.74 EUR
115+0.62 EUR
250+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053NV8HGS
Hersteller: WAYON
WMK053NV8HGS-CYG THT N channel transistors
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
64+1.13 EUR
119+0.6 EUR
2000+0.53 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK05N80M3
Hersteller: WAYON
WMK05N80M3-CYG THT N channel transistors
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.81 EUR
116+0.62 EUR
123+0.58 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N08HG2
Hersteller: WAYON
WMK060N08HG2-CYG THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.39 EUR
68+1.06 EUR
2000+0.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N10LGS
Hersteller: WAYON
WMK060N10LGS-CYG THT N channel transistors
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+3.98 EUR
22+3.25 EUR
58+1.23 EUR
2000+0.75 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMK06N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf
WMK06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
80+0.9 EUR
100+0.72 EUR
132+0.54 EUR
148+0.48 EUR
250+0.45 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK06N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf
WMK06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
67+1.07 EUR
80+0.9 EUR
100+0.72 EUR
132+0.54 EUR
148+0.48 EUR
250+0.45 EUR
500+0.42 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK071N15HG2
WMK071N15HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 135A; Idm: 540A; 255W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 135A
Pulsed drain current: 540A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
23+3.13 EUR
50+2.76 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WMK072N12HG2
Hersteller: WAYON
WMK072N12HG2-CYG THT N channel transistors
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.21 EUR
14+5.11 EUR
39+1.83 EUR
2000+1.1 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK072N12LG2
Hersteller: WAYON
WMK072N12LG2-CYG THT N channel transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.75 EUR
35+2.04 EUR
2000+1.22 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N60C2 WMK07N60C2.pdf
WMK07N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N65C2 WMK07N65C2.pdf
WMK07N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
auf Bestellung 470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
71+1.02 EUR
90+0.8 EUR
119+0.6 EUR
133+0.54 EUR
250+0.5 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N65C2 WMK07N65C2.pdf
WMK07N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 470 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
59+1.22 EUR
71+1.02 EUR
90+0.8 EUR
119+0.6 EUR
133+0.54 EUR
250+0.5 EUR
500+0.48 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430
WMK07N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK080N10LG2
WMK080N10LG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.59 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK080N10LG2
WMK080N10LG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
45+1.59 EUR
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK08N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F037B1162360DF&compId=WMx08N20JN.pdf?ci_sign=d09931e1b9e4e12e644ccf3703a5c8571fd427b4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.8A; Idm: 24A; 31W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 3.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK08N80M3 WMx08N80M3.pdf
WMK08N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK099N10HGS
Hersteller: WAYON
WMK099N10HGS-CYG THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
82+0.87 EUR
2000+0.52 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK099N10LGS
Hersteller: WAYON
WMK099N10LGS-CYG THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
71+1 EUR
2000+0.61 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB96FF4996A0C4&compId=WMK09N60C2.pdf?ci_sign=f97a5882064f47d4725c3b36f729e0b42c4e931b
WMK09N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
67+1.07 EUR
85+0.85 EUR
112+0.64 EUR
125+0.58 EUR
250+0.53 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
WMK09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB96FF4996A0C4&compId=WMK09N60C2.pdf?ci_sign=f97a5882064f47d4725c3b36f729e0b42c4e931b
WMK09N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
56+1.29 EUR
67+1.07 EUR
85+0.85 EUR
112+0.64 EUR
125+0.58 EUR
250+0.53 EUR
500+0.51 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N07TS
WMK100N07TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
94+0.77 EUR
113+0.64 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N07TS
WMK100N07TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 220 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
67+1.07 EUR
94+0.77 EUR
113+0.64 EUR
250+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N10TS
WMK100N10TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N10TS
WMK100N10TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+5.96 EUR
50+1.43 EUR
250+1.19 EUR
1000+1.16 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBBE6561F0E0C4&compId=WMx10N70C2.pdf?ci_sign=7d2406cf9166ebde6c96098c8529a41344f7a76e
WMK10N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMK10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
34+2.12 EUR
43+1.69 EUR
57+1.27 EUR
100+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMK10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 278 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.52 EUR
34+2.12 EUR
43+1.69 EUR
57+1.27 EUR
100+1.13 EUR
250+1.04 EUR
500+1 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK110N20HG2
WMK110N20HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
14+5.43 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK110N20HG2
WMK110N20HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.75 EUR
14+5.43 EUR
50+4.82 EUR
250+4.32 EUR
1000+4.18 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK115N15HG4
Hersteller: WAYON
WMK115N15HG4-CYG THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.39 EUR
34+2.1 EUR
2000+1.27 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
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