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WMK20N50D1 WMK20N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK20N65C2 WMK20N65C2 WAYON WMx20N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 260 Stücke:
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22+3.92 EUR
27+3.27 EUR
33+2.62 EUR
50+1.95 EUR
100+1.75 EUR
250+1.63 EUR
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WMK25N06TS WMK25N06TS WAYON WMK25N06TS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 425 Stücke:
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114+0.75 EUR
199+0.43 EUR
240+0.36 EUR
265+0.32 EUR
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WMK25N80M3 WMK25N80M3 WAYON WMx25N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 181 Stücke:
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11+8.28 EUR
13+6.91 EUR
16+5.53 EUR
50+4.13 EUR
100+3.72 EUR
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WMK26N60C4 WMK26N60C4 WAYON WMx26N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 45 Stücke:
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18+4.94 EUR
21+4.11 EUR
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WMK26N60F2 WMK26N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
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27+3.25 EUR
33+2.61 EUR
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WMK26N60FD WMK26N60FD WAYON WMx26N60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK26N65C4 WMK26N65C4 WAYON WMx26N65C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK26N65FD WMK26N65FD WAYON WMx26N65FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK28N60C4 WMK28N60C4 WAYON WMx28N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
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22+3.92 EUR
25+3.51 EUR
29+2.94 EUR
33+2.64 EUR
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WMK28N60F2 WMK28N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 65A
Gate charge: 27.3nC
Produkt ist nicht verfügbar
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WMK28N65F2 WMK28N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK340N20HG2 WMK340N20HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
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13+6.56 EUR
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WMK36N60C4 WMK36N60C4 WAYON WMx36N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 288 Stücke:
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15+5.95 EUR
16+5.33 EUR
20+4.47 EUR
25+4.01 EUR
100+3.72 EUR
250+3.56 EUR
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WMK36N60F2 WMK36N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
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9+9.46 EUR
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WMK36N65C4 WMK36N65C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 354 Stücke:
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21+4.11 EUR
23+3.81 EUR
50+3.56 EUR
100+3.18 EUR
250+3.08 EUR
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WMK36N65F2 WMK36N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK38N60FD WMK38N60FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK38N65FD WMK38N65FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK3N150D1 WMK3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.48 EUR
63+1.36 EUR
73+1.18 EUR
250+1.06 EUR
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WMK40N20JN WMK40N20JN WAYON WMx40N20JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
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WMK4N65D1B WMK4N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 112W
Gate charge: 14.5nC
Technology: WMOS™ D1
auf Bestellung 228 Stücke:
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221+0.38 EUR
228+0.37 EUR
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WMK4N90D1 WMK4N90D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
Produkt ist nicht verfügbar
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WMK4N90D1B WMK4N90D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
Produkt ist nicht verfügbar
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WMK50N06TS WMK50N06TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 788 Stücke:
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93+0.92 EUR
165+0.51 EUR
198+0.43 EUR
250+0.38 EUR
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WMK50N20JN WMK50N20JN WAYON WMx50N20JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
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WMK53N60F2 WMK53N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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3+28.37 EUR
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WMK53N65F2 WMK53N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.82 EUR
16+5.39 EUR
50+5.06 EUR
100+4.52 EUR
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WMK6N90D1 WMK6N90D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK6N90D1B WMK6N90D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
82+1.04 EUR
122+0.7 EUR
161+0.52 EUR
250+0.46 EUR
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WMK75N03T1 WMK75N03T1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 300A; 59W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 59W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.8 EUR
190+0.45 EUR
228+0.37 EUR
253+0.33 EUR
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WMK7N65D1B WMK7N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK80N04T1 WMK80N04T1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 56.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 320A
Gate charge: 36nC
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183+0.46 EUR
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WMK80N06TS WMK80N06TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK80R260S WMK80R260S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Pulsed drain current: 78A
Power dissipation: 227W
Gate charge: 39nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 255mΩ
Produkt ist nicht verfügbar
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WMK85N20JN WMK85N20JN WAYON WMx85N20JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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WMK90R260S WMK90R260S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 227W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 227W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
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WMK98N25JN WMK98N25JN WAYON WMx98N25JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TO220-3
Case: TO220-3
Mounting: THT
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
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WMK9N50D1B WMK9N50D1B WAYON WMx9N50D1B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML030N06HG4 WML030N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
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72+1.19 EUR
81+1.06 EUR
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WML043N10HGS WML043N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
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61+1.42 EUR
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WML04N60PC4 WML04N60PC4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 7A
Gate charge: 2.8nC
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134+0.63 EUR
224+0.38 EUR
261+0.32 EUR
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WML04N70C2 WML04N70C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML05N100C2 WML05N100C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML05N80M3 WML05N80M3 WAYON WMx05N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 166 Stücke:
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WML06N80M3 WML06N80M3 WAYON WMx06N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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102+0.83 EUR
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WML06N80M3 WML06N80M3
Produktcode: 193245
zu Favoriten hinzufügen Lieblingsprodukt
Wayon Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 800 В
Drain-Strom Idd, A: 5 А
Durchlasswiderstand Rds(on), Ohm: 1,8 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 300/10,7
Montage: THT
Produkt ist nicht verfügbar
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WML07N100C2 WML07N100C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 15.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML07N60C2 WML07N60C2 WAYON WMO07N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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135+0.63 EUR
155+0.55 EUR
164+0.52 EUR
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WML07N60C4 WML07N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
auf Bestellung 383 Stücke:
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WML07N65C4 WML07N65C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML080N10HG2 WML080N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML08N60C4 WML08N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 373 Stücke:
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97+0.88 EUR
105+0.81 EUR
250+0.77 EUR
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WML08N65C4 WML08N65C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 7.3nC
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WML10N100C2 WML10N100C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WML10N50C4 WML10N50C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 26W
Case: TO220FP
Mounting: THT
Drain-source voltage: 500V
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.63Ω
Pulsed drain current: 16A
Gate charge: 7.3nC
Technology: WMOS™ C4
Drain current: 4.8A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML10N60C4 WML10N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
auf Bestellung 194 Stücke:
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69+1.25 EUR
82+1.05 EUR
91+0.94 EUR
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WML10N65C2 WML10N65C2 WAYON WMx10N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML10N65C4 WML10N65C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
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WML10N65EM WML10N65EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
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WMK20N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK20N65C2 WMx20N65C2.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 260 Stücke:
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WMK25N06TS WMK25N06TS.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 425 Stücke:
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WMK25N80M3 WMx25N80M3.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 181 Stücke:
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WMK26N60C4 WMx26N60C4.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 45 Stücke:
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18+4.94 EUR
21+4.11 EUR
26+3.28 EUR
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WMK26N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
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AnzahlPrivatkunde
22+3.89 EUR
27+3.25 EUR
33+2.61 EUR
50+1.94 EUR
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WMK26N60FD WMx26N60FD.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N65C4 WMx26N65C4.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N65FD WMx26N65FD.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60C4 WMx28N60C4.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+3.92 EUR
25+3.51 EUR
29+2.94 EUR
33+2.64 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 65A
Gate charge: 27.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK340N20HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.56 EUR
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WMK36N60C4 WMx36N60C4.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.95 EUR
16+5.33 EUR
20+4.47 EUR
25+4.01 EUR
100+3.72 EUR
250+3.56 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK36N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
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AnzahlPrivatkunde
9+9.46 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
WMK36N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.11 EUR
23+3.81 EUR
50+3.56 EUR
100+3.18 EUR
250+3.08 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK36N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK38N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK38N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK3N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
58+1.48 EUR
63+1.36 EUR
73+1.18 EUR
250+1.06 EUR
Mindestbestellmenge: 58 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK40N20JN WMx40N20JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK4N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 112W
Gate charge: 14.5nC
Technology: WMOS™ D1
auf Bestellung 228 Stücke:
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AnzahlPrivatkunde
221+0.38 EUR
228+0.37 EUR
Mindestbestellmenge: 221 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK4N90D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK4N90D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK50N06TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
165+0.51 EUR
198+0.43 EUR
250+0.38 EUR
Mindestbestellmenge: 93 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK50N20JN WMx50N20JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK53N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK53N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.82 EUR
16+5.39 EUR
50+5.06 EUR
100+4.52 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK6N90D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK6N90D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
82+1.04 EUR
122+0.7 EUR
161+0.52 EUR
250+0.46 EUR
Mindestbestellmenge: 82 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK75N03T1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 300A; 59W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 59W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
107+0.8 EUR
190+0.45 EUR
228+0.37 EUR
253+0.33 EUR
Mindestbestellmenge: 107 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK7N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK80N04T1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 56.8W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 56.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 320A
Gate charge: 36nC
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
183+0.46 EUR
219+0.39 EUR
250+0.35 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK80N06TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK80R260S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Pulsed drain current: 78A
Power dissipation: 227W
Gate charge: 39nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 255mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK85N20JN WMx85N20JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMK90R260S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 227W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 227W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK98N25JN WMx98N25JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TO220-3
Case: TO220-3
Mounting: THT
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
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WMK9N50D1B WMx9N50D1B.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML030N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 195 Stücke:
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68+1.26 EUR
72+1.19 EUR
81+1.06 EUR
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WML043N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 160 Stücke:
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57+1.51 EUR
61+1.42 EUR
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WML04N60PC4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 7A
Gate charge: 2.8nC
auf Bestellung 944 Stücke:
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77+1.11 EUR
134+0.63 EUR
224+0.38 EUR
261+0.32 EUR
500+0.27 EUR
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WML04N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML05N100C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML05N80M3 WMx05N80M3.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 166 Stücke:
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53+1.62 EUR
97+0.88 EUR
111+0.77 EUR
121+0.7 EUR
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WML06N80M3 WMx06N80M3.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 526 Stücke:
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68+1.26 EUR
90+0.95 EUR
102+0.83 EUR
111+0.77 EUR
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WML06N80M3
Produktcode: 193245
zu Favoriten hinzufügen Lieblingsprodukt
Hersteller: Wayon
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 800 В
Drain-Strom Idd, A: 5 А
Durchlasswiderstand Rds(on), Ohm: 1,8 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 300/10,7
Montage: THT
Produkt ist nicht verfügbar
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WML07N100C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 15.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML07N60C2 WMO07N60C2.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 425 Stücke:
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72+1.19 EUR
135+0.63 EUR
155+0.55 EUR
164+0.52 EUR
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WML07N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
auf Bestellung 383 Stücke:
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91+0.94 EUR
100+0.86 EUR
120+0.71 EUR
133+0.64 EUR
144+0.6 EUR
250+0.57 EUR
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WML07N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML080N10HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML08N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 373 Stücke:
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65+1.31 EUR
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88+0.98 EUR
97+0.88 EUR
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250+0.77 EUR
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WML08N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 7.3nC
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WML10N100C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WML10N50C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 26W
Case: TO220FP
Mounting: THT
Drain-source voltage: 500V
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 0.63Ω
Pulsed drain current: 16A
Gate charge: 7.3nC
Technology: WMOS™ C4
Drain current: 4.8A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML10N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
auf Bestellung 194 Stücke:
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61+1.42 EUR
69+1.25 EUR
82+1.05 EUR
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WML10N65C2 WMx10N65C2.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML10N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
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WML10N65EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
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