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WMK119N12HG4 WAYON WMK119N12HG4-CYG THT N channel transistors
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
24+2.97 EUR
28+2.56 EUR
76+0.94 EUR
2000+0.57 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMK119N12LG4 WAYON WMK119N12LG4-CYG THT N channel transistors
auf Bestellung 40 Stücke:
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40+1.79 EUR
77+0.93 EUR
2000+0.56 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMK11N65C2 WMK11N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK11N65C2 WMK11N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
10+7.15 EUR
25+2.86 EUR
100+0.83 EUR
250+0.76 EUR
500+0.73 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK120N04TS WMK120N04TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
126+0.57 EUR
151+0.48 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMK120N04TS WMK120N04TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
126+0.57 EUR
151+0.48 EUR
250+0.43 EUR
1000+0.42 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMK130N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F067521B39E0DF&compId=WMx130N20JN.pdf?ci_sign=4a8fca74270fe8c98c938107049e7e60142e528c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 188nC
Reverse recovery time: 196ns
On-state resistance: 5.2mΩ
Power dissipation: 416W
Drain current: 117A
Drain-source voltage: 200V
Pulsed drain current: 620A
Kind of package: tube
Produkt ist nicht verfügbar
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WMK130N25JN WAYON WMx130N25JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Produkt ist nicht verfügbar
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WMK13N50D1 WMK13N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
71+1.01 EUR
89+0.81 EUR
119+0.6 EUR
132+0.54 EUR
250+0.5 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
WMK13N50D1 WMK13N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 252 Stücke:
Lieferzeit 7-14 Tag (e)
60+1.2 EUR
71+1.01 EUR
89+0.81 EUR
119+0.6 EUR
132+0.54 EUR
250+0.5 EUR
500+0.48 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
WMK13N80M3 WAYON WMK13N80M3-CYG THT N channel transistors
auf Bestellung 479 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.39 EUR
49+1.49 EUR
51+1.42 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N60C2 WMK14N60C2 WAYON WMx14N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Heatsink thickness: 1.2...1.45mm
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
43+1.69 EUR
54+1.34 EUR
71+1.02 EUR
100+0.92 EUR
250+0.84 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N60C2 WMK14N60C2 WAYON WMx14N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 425 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
43+1.69 EUR
54+1.34 EUR
71+1.02 EUR
100+0.92 EUR
250+0.84 EUR
500+0.82 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N65C4 WAYON WMx14N65C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N70C2 WMK14N70C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
39+1.84 EUR
50+1.46 EUR
65+1.1 EUR
100+0.99 EUR
250+0.92 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N70C2 WMK14N70C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
39+1.84 EUR
50+1.46 EUR
65+1.1 EUR
100+0.99 EUR
250+0.92 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMK15N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK160N25JN WAYON WMx160N25JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 416W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 185nC
Reverse recovery time: 260ns
Pulsed drain current: 580A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK161N15T2 WMK161N15T2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
25+2.93 EUR
50+2.59 EUR
100+2.33 EUR
250+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMK161N15T2 WMK161N15T2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.1 EUR
25+2.93 EUR
50+2.59 EUR
100+2.33 EUR
250+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N10T1 WMK16N10T1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20.6nC
Pulsed drain current: 63.2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N60C2 WMK16N60C2 WAYON WMx16N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N60FD WMK16N60FD WAYON WMx16N60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 WMK16N65C2 WAYON WMx16N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
35+2.1 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 WMK16N65C2 WAYON WMx16N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 408 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.52 EUR
35+2.1 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
500+1 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65FD WMK16N65FD WAYON WMx16N65FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N70C2 WMK16N70C2 WAYON WMx16N70C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK175N10HG4 WAYON WMK175N10HG4-CYG THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
94+0.76 EUR
2000+0.46 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK175N10LG4 WAYON WMK175N10LG4-CYG THT N channel transistors
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.74 EUR
102+0.7 EUR
2000+0.42 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
WMK180N03TS WMK180N03TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK18N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
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WMK18P10TS WMK18P10TS WAYON Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 75.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 75.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK190N15HG4 WAYON WMK190N15HG4-CYG THT N channel transistors
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
19+3.76 EUR
51+1.4 EUR
2000+0.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK20N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK20N65C2 WMK20N65C2 WAYON WMx20N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
27+2.69 EUR
34+2.16 EUR
50+1.62 EUR
100+1.46 EUR
250+1.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK20N65C2 WMK20N65C2 WAYON WMx20N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 389 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.22 EUR
27+2.69 EUR
34+2.16 EUR
50+1.62 EUR
100+1.46 EUR
250+1.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK220N20HG3 WMK220N20HG3 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N06TS WMK25N06TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N06TS WMK25N06TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
10+7.15 EUR
50+1.43 EUR
250+0.29 EUR
1000+0.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N10T1 WMK25N10T1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N10T1 WMK25N10T1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.39 EUR
50+1.43 EUR
250+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N80M3 WMK25N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.89 EUR
13+5.75 EUR
16+4.6 EUR
50+3.45 EUR
100+3.1 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N80M3 WMK25N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 239 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.89 EUR
13+5.75 EUR
16+4.6 EUR
50+3.45 EUR
100+3.1 EUR
250+2.87 EUR
500+2.75 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60C4 WMK26N60C4 WAYON WMx26N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.09 EUR
21+3.42 EUR
27+2.73 EUR
50+2.06 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60C4 WMK26N60C4 WAYON WMx26N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.09 EUR
21+3.42 EUR
27+2.73 EUR
50+2.06 EUR
100+1.84 EUR
250+1.7 EUR
500+1.63 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60F2 WMK26N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.23 EUR
27+2.7 EUR
34+2.16 EUR
50+1.62 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60F2 WMK26N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.23 EUR
27+2.7 EUR
34+2.16 EUR
50+1.62 EUR
100+1.46 EUR
250+1.34 EUR
500+1.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60FD WMK26N60FD WAYON WMx26N60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91DF84CA500A80D5&compId=WMx26N65C4.pdf?ci_sign=7e5a9d77b19220996fa7d9874ced508749bc635b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N15T2 WAYON WMK28N15T2-CYG THT N channel transistors
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
81+0.89 EUR
2000+0.53 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60C4 WMK28N60C4 WAYON WMx28N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
25+2.92 EUR
30+2.45 EUR
33+2.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60C4 WMK28N60C4 WAYON WMx28N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.25 EUR
25+2.92 EUR
30+2.45 EUR
33+2.19 EUR
100+2.03 EUR
250+1.93 EUR
500+1.8 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60F2 WMK28N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK30N25JN WAYON WMx30N25JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 133ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK340N20HG2 WMK340N20HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
40+1.83 EUR
50+1.62 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMK340N20HG2 WMK340N20HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
40+1.83 EUR
50+1.62 EUR
250+1.44 EUR
1000+1.4 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMK36N60C4 WMK36N60C4 WAYON WMx36N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.96 EUR
17+4.43 EUR
20+3.73 EUR
25+3.35 EUR
100+3.1 EUR
250+2.96 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMK36N60C4 WMK36N60C4 WAYON WMx36N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.96 EUR
17+4.43 EUR
20+3.73 EUR
25+3.35 EUR
100+3.1 EUR
250+2.96 EUR
500+2.66 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMK119N12HG4
Hersteller: WAYON
WMK119N12HG4-CYG THT N channel transistors
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+2.97 EUR
28+2.56 EUR
76+0.94 EUR
2000+0.57 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMK119N12LG4
Hersteller: WAYON
WMK119N12LG4-CYG THT N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.79 EUR
77+0.93 EUR
2000+0.56 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMK11N65C2
WMK11N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK11N65C2
WMK11N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.21 EUR
10+7.15 EUR
25+2.86 EUR
100+0.83 EUR
250+0.76 EUR
500+0.73 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK120N04TS
WMK120N04TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
126+0.57 EUR
151+0.48 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMK120N04TS
WMK120N04TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 104W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
81+0.89 EUR
126+0.57 EUR
151+0.48 EUR
250+0.43 EUR
1000+0.42 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMK130N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F067521B39E0DF&compId=WMx130N20JN.pdf?ci_sign=4a8fca74270fe8c98c938107049e7e60142e528c
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO220-3
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 188nC
Reverse recovery time: 196ns
On-state resistance: 5.2mΩ
Power dissipation: 416W
Drain current: 117A
Drain-source voltage: 200V
Pulsed drain current: 620A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK130N25JN WMx130N25JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK13N50D1
WMK13N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
71+1.01 EUR
89+0.81 EUR
119+0.6 EUR
132+0.54 EUR
250+0.5 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
WMK13N50D1
WMK13N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 252 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
60+1.2 EUR
71+1.01 EUR
89+0.81 EUR
119+0.6 EUR
132+0.54 EUR
250+0.5 EUR
500+0.48 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
WMK13N80M3
Hersteller: WAYON
WMK13N80M3-CYG THT N channel transistors
auf Bestellung 479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.39 EUR
49+1.49 EUR
51+1.42 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N60C2 WMx14N60C2.pdf
WMK14N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Heatsink thickness: 1.2...1.45mm
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
43+1.69 EUR
54+1.34 EUR
71+1.02 EUR
100+0.92 EUR
250+0.84 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N60C2 WMx14N60C2.pdf
WMK14N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 425 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
36+2.03 EUR
43+1.69 EUR
54+1.34 EUR
71+1.02 EUR
100+0.92 EUR
250+0.84 EUR
500+0.82 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N65C4 WMx14N65C4.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N70C2
WMK14N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
39+1.84 EUR
50+1.46 EUR
65+1.1 EUR
100+0.99 EUR
250+0.92 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N70C2
WMK14N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
33+2.2 EUR
39+1.84 EUR
50+1.46 EUR
65+1.1 EUR
100+0.99 EUR
250+0.92 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMK15N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK160N25JN WMx160N25JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 580A; 416W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Power dissipation: 416W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 185nC
Reverse recovery time: 260ns
Pulsed drain current: 580A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK161N15T2
WMK161N15T2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
25+2.93 EUR
50+2.59 EUR
100+2.33 EUR
250+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMK161N15T2
WMK161N15T2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
Pulsed drain current: 540A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.1 EUR
25+2.93 EUR
50+2.59 EUR
100+2.33 EUR
250+2.23 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N10T1
WMK16N10T1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20.6nC
Pulsed drain current: 63.2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N60C2 WMx16N60C2.pdf
WMK16N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N60FD WMx16N60FD.pdf
WMK16N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 WMx16N65C2.pdf
WMK16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
35+2.1 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 WMx16N65C2.pdf
WMK16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 408 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.52 EUR
35+2.1 EUR
43+1.69 EUR
57+1.26 EUR
100+1.13 EUR
250+1.04 EUR
500+1 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65FD WMx16N65FD.pdf
WMK16N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N70C2 WMx16N70C2.pdf
WMK16N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK175N10HG4
Hersteller: WAYON
WMK175N10HG4-CYG THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
94+0.76 EUR
2000+0.46 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK175N10LG4
Hersteller: WAYON
WMK175N10LG4-CYG THT N channel transistors
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.74 EUR
102+0.7 EUR
2000+0.42 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
WMK180N03TS
WMK180N03TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; Idm: 720A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK18N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK18P10TS
WMK18P10TS
Hersteller: WAYON
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 75.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 75.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK190N15HG4
Hersteller: WAYON
WMK190N15HG4-CYG THT N channel transistors
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.21 EUR
19+3.76 EUR
51+1.4 EUR
2000+0.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMK20N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK20N65C2 WMx20N65C2.pdf
WMK20N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
27+2.69 EUR
34+2.16 EUR
50+1.62 EUR
100+1.46 EUR
250+1.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK20N65C2 WMx20N65C2.pdf
WMK20N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 389 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.22 EUR
27+2.69 EUR
34+2.16 EUR
50+1.62 EUR
100+1.46 EUR
250+1.37 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK220N20HG3
WMK220N20HG3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 78A; Idm: 312A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 78A
Pulsed drain current: 312A
Power dissipation: 312.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N06TS
WMK25N06TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N06TS
WMK25N06TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
10+7.15 EUR
50+1.43 EUR
250+0.29 EUR
1000+0.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N10T1
WMK25N10T1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N10T1
WMK25N10T1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 37.9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.39 EUR
50+1.43 EUR
250+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6
WMK25N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.89 EUR
13+5.75 EUR
16+4.6 EUR
50+3.45 EUR
100+3.1 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMK25N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6
WMK25N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 239 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.89 EUR
13+5.75 EUR
16+4.6 EUR
50+3.45 EUR
100+3.1 EUR
250+2.87 EUR
500+2.75 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60C4 WMx26N60C4.pdf
WMK26N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.09 EUR
21+3.42 EUR
27+2.73 EUR
50+2.06 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60C4 WMx26N60C4.pdf
WMK26N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.09 EUR
21+3.42 EUR
27+2.73 EUR
50+2.06 EUR
100+1.84 EUR
250+1.7 EUR
500+1.63 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60F2
WMK26N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
27+2.7 EUR
34+2.16 EUR
50+1.62 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60F2
WMK26N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.23 EUR
27+2.7 EUR
34+2.16 EUR
50+1.62 EUR
100+1.46 EUR
250+1.34 EUR
500+1.29 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N60FD WMx26N60FD.pdf
WMK26N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91DF84CA500A80D5&compId=WMx26N65C4.pdf?ci_sign=7e5a9d77b19220996fa7d9874ced508749bc635b
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK26N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N15T2
Hersteller: WAYON
WMK28N15T2-CYG THT N channel transistors
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.89 EUR
81+0.89 EUR
2000+0.53 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60C4 WMx28N60C4.pdf
WMK28N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.92 EUR
30+2.45 EUR
33+2.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60C4 WMx28N60C4.pdf
WMK28N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.92 EUR
30+2.45 EUR
33+2.19 EUR
100+2.03 EUR
250+1.93 EUR
500+1.8 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N60F2
WMK28N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK28N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK30N25JN WMx30N25JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 133ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK340N20HG2
WMK340N20HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
40+1.83 EUR
50+1.62 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMK340N20HG2
WMK340N20HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 200A; 173.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 173.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.94 EUR
40+1.83 EUR
50+1.62 EUR
250+1.44 EUR
1000+1.4 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMK36N60C4 WMx36N60C4.pdf
WMK36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.96 EUR
17+4.43 EUR
20+3.73 EUR
25+3.35 EUR
100+3.1 EUR
250+2.96 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMK36N60C4 WMx36N60C4.pdf
WMK36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.96 EUR
17+4.43 EUR
20+3.73 EUR
25+3.35 EUR
100+3.1 EUR
250+2.96 EUR
500+2.66 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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