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WMH04N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH07N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH07N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMH07N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8E830FB97C0C4&compId=WMx07N70C2.pdf?ci_sign=835d03b0cb028f47c9c9a8280204170f11899544 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH09N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91665E42DA0C4&compId=WMx09N65C2.pdf?ci_sign=c87b0a4bbfcab7cbad08446f5d75049cd954c7fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91D3DA07080C4&compId=WMx09N70C2.pdf?ci_sign=d1e647a5efc12ee6e1b3cd5838cbc8bc02b32049 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH7N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
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WMI30N60D1 WMI30N60D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
33+2.2 EUR
44+1.66 EUR
49+1.49 EUR
120+1.39 EUR
Mindestbestellmenge: 26
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WMI30N60D1 WMI30N60D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.77 EUR
33+2.2 EUR
44+1.66 EUR
49+1.49 EUR
120+1.39 EUR
300+1.32 EUR
900+1.19 EUR
Mindestbestellmenge: 26
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WMJ020N10HGS WMJ020N10HGS WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD094D1EDF9211660E1&compId=WMJ020N10HGS.pdf?ci_sign=d2030aa4cfaf71043ae082e9d73859951c71b0ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.65 EUR
21+3.46 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
WMJ020N10HGS WMJ020N10HGS WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD094D1EDF9211660E1&compId=WMJ020N10HGS.pdf?ci_sign=d2030aa4cfaf71043ae082e9d73859951c71b0ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.65 EUR
21+3.46 EUR
27+2.7 EUR
28+2.56 EUR
300+2.47 EUR
900+2.46 EUR
Mindestbestellmenge: 20
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WMJ028N10HGS WMJ028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.7 EUR
29+2.55 EUR
32+2.25 EUR
36+2.02 EUR
90+1.96 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMJ028N10HGS WMJ028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.7 EUR
29+2.55 EUR
32+2.25 EUR
36+2.02 EUR
90+1.96 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMJ10N80D1 WMJ10N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
50+1.46 EUR
66+1.09 EUR
73+0.99 EUR
120+0.92 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ10N80D1 WMJ10N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
50+1.46 EUR
66+1.09 EUR
73+0.99 EUR
120+0.92 EUR
300+0.87 EUR
900+0.8 EUR
Mindestbestellmenge: 40
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WMJ11N150D1 WAYON WMJ11N150D1-CYG THT N channel transistors
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.4 EUR
11+6.52 EUR
900+6.46 EUR
Mindestbestellmenge: 8
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WMJ12N120D1 WMJ12N120D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.93 EUR
19+3.95 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 15
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WMJ12N120D1 WMJ12N120D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.93 EUR
19+3.95 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMJ15N80M3 WMJ15N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.59 EUR
14+5.28 EUR
19+3.96 EUR
30+3.56 EUR
120+3.3 EUR
Mindestbestellmenge: 11
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WMJ15N80M3 WMJ15N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.59 EUR
14+5.28 EUR
19+3.96 EUR
30+3.56 EUR
120+3.3 EUR
300+3.15 EUR
900+2.96 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ18N50D1B WMJ18N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
55+1.31 EUR
74+0.98 EUR
82+0.88 EUR
120+0.81 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMJ18N50D1B WMJ18N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
55+1.31 EUR
74+0.98 EUR
82+0.88 EUR
120+0.81 EUR
300+0.78 EUR
900+0.72 EUR
Mindestbestellmenge: 44
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WMJ20N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ220N20HG3 WMJ220N20HG3 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 36nC
On-state resistance: 21mΩ
Drain current: 82A
Power dissipation: 329W
Pulsed drain current: 328A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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WMJ25N50D1B WMJ25N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
52+1.39 EUR
69+1.04 EUR
76+0.94 EUR
120+0.87 EUR
300+0.83 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N50D1B WMJ25N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 427 Stücke:
Lieferzeit 7-14 Tag (e)
42+1.73 EUR
52+1.39 EUR
69+1.04 EUR
76+0.94 EUR
120+0.87 EUR
300+0.83 EUR
900+0.74 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N80M3 WMJ25N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.84 EUR
12+6.26 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N80M3 WMJ25N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.84 EUR
12+6.26 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ26N65FD WMJ26N65FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD95C76B3D6C0C4&compId=WMx26N65FD.pdf?ci_sign=0701854ad1ff916f82eddd8d840516d4ff9f951e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ26N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N50C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60C4 WMJ28N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DC7AB76899DE0DE&compId=WMx28N60C4.pdf?ci_sign=447ad9e5b437857b1ef7d82bf35dfcac05d3243a Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.49 EUR
20+3.59 EUR
27+2.69 EUR
30+2.42 EUR
120+2.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60C4 WMJ28N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DC7AB76899DE0DE&compId=WMx28N60C4.pdf?ci_sign=447ad9e5b437857b1ef7d82bf35dfcac05d3243a Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.49 EUR
20+3.59 EUR
27+2.69 EUR
30+2.42 EUR
120+2.25 EUR
300+2.13 EUR
900+1.93 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60F2 WMJ28N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.68 EUR
16+4.53 EUR
22+3.4 EUR
30+3.06 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60F2 WMJ28N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.68 EUR
16+4.53 EUR
22+3.4 EUR
30+3.06 EUR
120+2.83 EUR
300+2.7 EUR
900+2.55 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60C4 WMJ36N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.71 EUR
12+6.16 EUR
16+4.62 EUR
30+4.16 EUR
120+3.86 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60C4 WMJ36N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.71 EUR
12+6.16 EUR
16+4.62 EUR
30+4.16 EUR
120+3.86 EUR
300+3.68 EUR
900+3.3 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60F2 WMJ36N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.94 EUR
13+5.55 EUR
18+4.16 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60F2 WMJ36N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.94 EUR
13+5.55 EUR
18+4.16 EUR
30+3.75 EUR
120+3.47 EUR
300+3.32 EUR
900+3.2 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N60FD WMJ38N60FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N65C2 WMJ38N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB26D3FAE73C0C4&compId=WMx38N65C2.pdf?ci_sign=e673a9db466554b7f807d4621d8ef54817bd5ed8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N65FD WMJ38N65FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N120D1 WMJ3N120D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
50+1.46 EUR
65+1.1 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N120D1 WMJ3N120D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.82 EUR
50+1.46 EUR
65+1.1 EUR
84+0.86 EUR
88+0.82 EUR
900+0.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N150D1 WMJ3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
35+2.09 EUR
46+1.57 EUR
52+1.4 EUR
120+1.32 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N150D1 WMJ3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.62 EUR
35+2.09 EUR
46+1.57 EUR
52+1.4 EUR
120+1.32 EUR
300+1.24 EUR
900+1.22 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
WMJ40N50D1 WMJ40N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.02 EUR
15+4.8 EUR
20+3.6 EUR
30+3.25 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMJ40N50D1 WMJ40N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.02 EUR
15+4.8 EUR
20+3.6 EUR
30+3.25 EUR
120+3 EUR
300+2.86 EUR
900+2.7 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMJ4N150D1 WMJ4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
32+2.25 EUR
43+1.69 EUR
55+1.32 EUR
58+1.24 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMJ4N150D1 WMJ4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.82 EUR
32+2.25 EUR
43+1.69 EUR
55+1.32 EUR
58+1.24 EUR
900+1.22 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60C4 WMJ53N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60C4 WMJ53N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60F2 WMJ53N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.59 EUR
17+4.25 EUR
18+4.15 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60F2 WMJ53N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.59 EUR
17+4.25 EUR
18+4.15 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N65C4 WAYON WMJ53N65C4-CYG THT N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
4+17.88 EUR
11+6.51 EUR
900+4.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH07N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH07N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH07N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8E830FB97C0C4&compId=WMx07N70C2.pdf?ci_sign=835d03b0cb028f47c9c9a8280204170f11899544
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91665E42DA0C4&compId=WMx09N65C2.pdf?ci_sign=c87b0a4bbfcab7cbad08446f5d75049cd954c7fe
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91D3DA07080C4&compId=WMx09N70C2.pdf?ci_sign=d1e647a5efc12ee6e1b3cd5838cbc8bc02b32049
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH7N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMI30N60D1
WMI30N60D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
33+2.2 EUR
44+1.66 EUR
49+1.49 EUR
120+1.39 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMI30N60D1
WMI30N60D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.77 EUR
33+2.2 EUR
44+1.66 EUR
49+1.49 EUR
120+1.39 EUR
300+1.32 EUR
900+1.19 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMJ020N10HGS pVersion=0046&contRep=ZT&docId=005056AB281E1FD094D1EDF9211660E1&compId=WMJ020N10HGS.pdf?ci_sign=d2030aa4cfaf71043ae082e9d73859951c71b0ae
WMJ020N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
21+3.46 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
WMJ020N10HGS pVersion=0046&contRep=ZT&docId=005056AB281E1FD094D1EDF9211660E1&compId=WMJ020N10HGS.pdf?ci_sign=d2030aa4cfaf71043ae082e9d73859951c71b0ae
WMJ020N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.65 EUR
21+3.46 EUR
27+2.7 EUR
28+2.56 EUR
300+2.47 EUR
900+2.46 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
WMJ028N10HGS
WMJ028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
29+2.55 EUR
32+2.25 EUR
36+2.02 EUR
90+1.96 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMJ028N10HGS
WMJ028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.7 EUR
29+2.55 EUR
32+2.25 EUR
36+2.02 EUR
90+1.96 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMJ10N80D1
WMJ10N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
50+1.46 EUR
66+1.09 EUR
73+0.99 EUR
120+0.92 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ10N80D1
WMJ10N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.83 EUR
50+1.46 EUR
66+1.09 EUR
73+0.99 EUR
120+0.92 EUR
300+0.87 EUR
900+0.8 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ11N150D1
Hersteller: WAYON
WMJ11N150D1-CYG THT N channel transistors
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.4 EUR
11+6.52 EUR
900+6.46 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ12N120D1
WMJ12N120D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
19+3.95 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMJ12N120D1
WMJ12N120D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.93 EUR
19+3.95 EUR
34+2.14 EUR
36+2.03 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMJ15N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256
WMJ15N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.59 EUR
14+5.28 EUR
19+3.96 EUR
30+3.56 EUR
120+3.3 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ15N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256
WMJ15N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.59 EUR
14+5.28 EUR
19+3.96 EUR
30+3.56 EUR
120+3.3 EUR
300+3.15 EUR
900+2.96 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ18N50D1B
WMJ18N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
55+1.31 EUR
74+0.98 EUR
82+0.88 EUR
120+0.81 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMJ18N50D1B
WMJ18N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.63 EUR
55+1.31 EUR
74+0.98 EUR
82+0.88 EUR
120+0.81 EUR
300+0.78 EUR
900+0.72 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMJ20N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ220N20HG3
WMJ220N20HG3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 36nC
On-state resistance: 21mΩ
Drain current: 82A
Power dissipation: 329W
Pulsed drain current: 328A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N50D1B
WMJ25N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
52+1.39 EUR
69+1.04 EUR
76+0.94 EUR
120+0.87 EUR
300+0.83 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N50D1B
WMJ25N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 427 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
42+1.73 EUR
52+1.39 EUR
69+1.04 EUR
76+0.94 EUR
120+0.87 EUR
300+0.83 EUR
900+0.74 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6
WMJ25N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.84 EUR
12+6.26 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6
WMJ25N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.84 EUR
12+6.26 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ26N65FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD95C76B3D6C0C4&compId=WMx26N65FD.pdf?ci_sign=0701854ad1ff916f82eddd8d840516d4ff9f951e
WMJ26N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ26N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N50C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60C4 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DC7AB76899DE0DE&compId=WMx28N60C4.pdf?ci_sign=447ad9e5b437857b1ef7d82bf35dfcac05d3243a
WMJ28N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
20+3.59 EUR
27+2.69 EUR
30+2.42 EUR
120+2.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60C4 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DC7AB76899DE0DE&compId=WMx28N60C4.pdf?ci_sign=447ad9e5b437857b1ef7d82bf35dfcac05d3243a
WMJ28N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.49 EUR
20+3.59 EUR
27+2.69 EUR
30+2.42 EUR
120+2.25 EUR
300+2.13 EUR
900+1.93 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60F2
WMJ28N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.68 EUR
16+4.53 EUR
22+3.4 EUR
30+3.06 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60F2
WMJ28N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 27.3nC
Pulsed drain current: 65A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.68 EUR
16+4.53 EUR
22+3.4 EUR
30+3.06 EUR
120+2.83 EUR
300+2.7 EUR
900+2.55 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81
WMJ36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.71 EUR
12+6.16 EUR
16+4.62 EUR
30+4.16 EUR
120+3.86 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81
WMJ36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.71 EUR
12+6.16 EUR
16+4.62 EUR
30+4.16 EUR
120+3.86 EUR
300+3.68 EUR
900+3.3 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60F2
WMJ36N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.94 EUR
13+5.55 EUR
18+4.16 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60F2
WMJ36N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.94 EUR
13+5.55 EUR
18+4.16 EUR
30+3.75 EUR
120+3.47 EUR
300+3.32 EUR
900+3.2 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N60FD
WMJ38N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB26D3FAE73C0C4&compId=WMx38N65C2.pdf?ci_sign=e673a9db466554b7f807d4621d8ef54817bd5ed8
WMJ38N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N65FD
WMJ38N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N120D1
WMJ3N120D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
50+1.46 EUR
65+1.1 EUR
84+0.86 EUR
88+0.82 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N120D1
WMJ3N120D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.82 EUR
50+1.46 EUR
65+1.1 EUR
84+0.86 EUR
88+0.82 EUR
900+0.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N150D1
WMJ3N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
35+2.09 EUR
46+1.57 EUR
52+1.4 EUR
120+1.32 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N150D1
WMJ3N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.62 EUR
35+2.09 EUR
46+1.57 EUR
52+1.4 EUR
120+1.32 EUR
300+1.24 EUR
900+1.22 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
WMJ40N50D1
WMJ40N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.02 EUR
15+4.8 EUR
20+3.6 EUR
30+3.25 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMJ40N50D1
WMJ40N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.02 EUR
15+4.8 EUR
20+3.6 EUR
30+3.25 EUR
120+3 EUR
300+2.86 EUR
900+2.7 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMJ4N150D1
WMJ4N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
32+2.25 EUR
43+1.69 EUR
55+1.32 EUR
58+1.24 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMJ4N150D1
WMJ4N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 262 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.82 EUR
32+2.25 EUR
43+1.69 EUR
55+1.32 EUR
58+1.24 EUR
900+1.22 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60C4
WMJ53N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60C4
WMJ53N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60F2
WMJ53N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.59 EUR
17+4.25 EUR
18+4.15 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60F2
WMJ53N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.59 EUR
17+4.25 EUR
18+4.15 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N65C4
Hersteller: WAYON
WMJ53N65C4-CYG THT N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
4+17.88 EUR
11+6.51 EUR
900+4.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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