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WMH07N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8E830FB97C0C4&compId=WMx07N70C2.pdf?ci_sign=835d03b0cb028f47c9c9a8280204170f11899544 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH7N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
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WMI30N60D1 WMI30N60D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
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25+2.96 EUR
31+2.36 EUR
32+2.23 EUR
Mindestbestellmenge: 25
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WMJ020N10HGS WMJ020N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Power dissipation: 347.2W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ023N08HGS WMJ023N08HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Drain-source voltage: 80V
Drain current: 280A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 320.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1120A
Mounting: THT
Case: TO247-3
auf Bestellung 7 Stücke:
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7+10.21 EUR
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WMJ028N10HGS WMJ028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ10N80D1 WMJ10N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 234 Stücke:
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37+1.96 EUR
46+1.56 EUR
61+1.17 EUR
81+0.89 EUR
85+0.84 EUR
Mindestbestellmenge: 37
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WMJ11N150D1 WMJ11N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 11A; Idm: 44A; 250W
Mounting: THT
Drain current: 11A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 93nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 44A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 295 Stücke:
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9+8.32 EUR
11+6.86 EUR
12+6.48 EUR
120+6.23 EUR
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WMJ15N80M3 WMJ15N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 208 Stücke:
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11+7.02 EUR
13+5.61 EUR
22+3.26 EUR
24+3.09 EUR
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WMJ18N50D1B WMJ18N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 232 Stücke:
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42+1.73 EUR
53+1.37 EUR
70+1.03 EUR
91+0.79 EUR
97+0.74 EUR
Mindestbestellmenge: 42
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WMJ20N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ220N20HG3 WMJ220N20HG3 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 82A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Kind of package: tube
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 328A
Produkt ist nicht verfügbar
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WMJ25N50D1B WMJ25N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 320 Stücke:
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39+1.86 EUR
49+1.49 EUR
65+1.12 EUR
88+0.82 EUR
93+0.77 EUR
Mindestbestellmenge: 39
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WMJ25N80M3 WMJ25N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.84 EUR
14+5.46 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 11
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WMJ26N65FD WMJ26N65FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD95C76B3D6C0C4&compId=WMx26N65FD.pdf?ci_sign=0701854ad1ff916f82eddd8d840516d4ff9f951e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ26N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ28N50C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ28N60C4 WMJ28N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DC7AB76899DE0DE&compId=WMx28N60C4.pdf?ci_sign=447ad9e5b437857b1ef7d82bf35dfcac05d3243a Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.72 EUR
19+3.78 EUR
36+2.03 EUR
38+1.92 EUR
Mindestbestellmenge: 16
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WMJ28N60F2 WMJ28N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
16+4.76 EUR
26+2.8 EUR
27+2.66 EUR
Mindestbestellmenge: 12
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WMJ28N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ30N65EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 210W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ36N60C4 WMJ36N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.14 EUR
11+6.51 EUR
21+3.5 EUR
22+3.32 EUR
Mindestbestellmenge: 9
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WMJ36N60F2 WMJ36N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.32 EUR
13+5.86 EUR
21+3.53 EUR
22+3.33 EUR
Mindestbestellmenge: 10
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WMJ36N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ38N60FD WMJ38N60FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ38N65C2 WMJ38N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB26D3FAE73C0C4&compId=WMx38N65C2.pdf?ci_sign=e673a9db466554b7f807d4621d8ef54817bd5ed8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ38N65FD WMJ38N65FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ3N150D1 WMJ3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
32+2.25 EUR
43+1.69 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 26
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WMJ4N150D1 WMJ4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.83 EUR
32+2.26 EUR
43+1.7 EUR
55+1.32 EUR
58+1.24 EUR
Mindestbestellmenge: 26
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WMJ53N60C4 WMJ53N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.08 EUR
12+6.46 EUR
18+4.15 EUR
19+3.92 EUR
Mindestbestellmenge: 9
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WMJ53N60F2 WMJ53N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 278 Stücke:
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15+4.86 EUR
16+4.5 EUR
17+4.29 EUR
30+4.13 EUR
Mindestbestellmenge: 15
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WMJ53N65FD WMJ53N65FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 53A; 378W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Power dissipation: 378W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ60N60EM WMJ60N60EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.22 EUR
8+9.34 EUR
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WMJ69N30DMH WMJ69N30DMH WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.05 EUR
13+5.75 EUR
15+4.85 EUR
16+4.58 EUR
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WMJ80N60C4 WMJ80N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EEF1F39AF1E80C4&compId=WMJ80N60C4.pdf?ci_sign=7ead3b04bb3dfa6f94eae41389d42abca306e18c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 375ns
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.46 EUR
13+5.81 EUR
14+5.49 EUR
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WMJ80N60EM WMJ80N60EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
3+26 EUR
6+12.21 EUR
7+11.54 EUR
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WMJ80N60F2 WMJ80N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.95 EUR
6+11.91 EUR
Mindestbestellmenge: 4
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WMJ80N65C4 WMJ80N65C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.63 EUR
10+7.19 EUR
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WMJ80N65F2 WMJ80N65F2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087BFC5F071C0D3&compId=WMJ80N65F2.pdf?ci_sign=f874d423275e6f0a6769a5792cab93bd755bbb1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.53 EUR
12+6.03 EUR
Mindestbestellmenge: 5
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WMJ80R160S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 15A; Idm: 96A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80R260S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 78A
Power dissipation: 227W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60C4 WMJ90N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.58 EUR
9+8.39 EUR
10+7.94 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60F2 WMJ90N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.15 EUR
8+8.94 EUR
9+8.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65F2 WMJ90N65F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 650V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.15 EUR
7+10.35 EUR
8+9.78 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR WMJ90N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 183nC
Technology: WMOS™ SR
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 350A
Case: TO247-3
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.4 EUR
10+7.15 EUR
120+6.96 EUR
Mindestbestellmenge: 8
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WMJ90R260S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 310W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 39.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4 WMJ99N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.4 EUR
7+10.72 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2 WMJ99N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+26.96 EUR
6+12.51 EUR
7+11.83 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1 WMJ9N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Drain current: 9A
On-state resistance: 2.9Ω
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85.2nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.94 EUR
8+9.54 EUR
13+5.52 EUR
14+5.21 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1 WMJP32N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247PLUS
Mounting: THT
Kind of package: tube
On-state resistance: 0.11Ω
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 40A
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.16 EUR
15+4.93 EUR
24+3.09 EUR
25+2.93 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK020N06HG4 WMK020N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N08HGD WMK028N08HGD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS WMK028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4 WMK030N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06LG4 WMK030N06LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS WMK036N12HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMK037N10HGS WMK037N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 680A; 215.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 680A
Power dissipation: 215.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Gate charge: 86.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH07N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8E830FB97C0C4&compId=WMx07N70C2.pdf?ci_sign=835d03b0cb028f47c9c9a8280204170f11899544
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH7N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMI30N60D1
WMI30N60D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
31+2.36 EUR
32+2.23 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMJ020N10HGS
WMJ020N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Power dissipation: 347.2W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ023N08HGS
WMJ023N08HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W
Drain-source voltage: 80V
Drain current: 280A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 320.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.14µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1120A
Mounting: THT
Case: TO247-3
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMJ028N10HGS
WMJ028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 228A
Pulsed drain current: 912A
Power dissipation: 320.5W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ10N80D1
WMJ10N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
46+1.56 EUR
61+1.17 EUR
81+0.89 EUR
85+0.84 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMJ11N150D1
WMJ11N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 11A; Idm: 44A; 250W
Mounting: THT
Drain current: 11A
On-state resistance: 2.5Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 93nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 44A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.32 EUR
11+6.86 EUR
12+6.48 EUR
120+6.23 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
WMJ15N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256
WMJ15N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.02 EUR
13+5.61 EUR
22+3.26 EUR
24+3.09 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ18N50D1B
WMJ18N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
53+1.37 EUR
70+1.03 EUR
91+0.79 EUR
97+0.74 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WMJ20N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ220N20HG3
WMJ220N20HG3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 82A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Kind of package: tube
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 328A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N50D1B
WMJ25N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
49+1.49 EUR
65+1.12 EUR
88+0.82 EUR
93+0.77 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
WMJ25N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93584FEBFC0C4&compId=WMx25N80M3.pdf?ci_sign=d6e04e8f21a66e4cb48f0f793bc683e492dcc6a6
WMJ25N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.84 EUR
14+5.46 EUR
21+3.43 EUR
23+3.25 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ26N65FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD95C76B3D6C0C4&compId=WMx26N65FD.pdf?ci_sign=0701854ad1ff916f82eddd8d840516d4ff9f951e
WMJ26N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ26N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N50C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60C4 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DC7AB76899DE0DE&compId=WMx28N60C4.pdf?ci_sign=447ad9e5b437857b1ef7d82bf35dfcac05d3243a
WMJ28N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.72 EUR
19+3.78 EUR
36+2.03 EUR
38+1.92 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N60F2
WMJ28N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
16+4.76 EUR
26+2.8 EUR
27+2.66 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMJ28N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ30N65EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 210W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81
WMJ36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.14 EUR
11+6.51 EUR
21+3.5 EUR
22+3.32 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N60F2
WMJ36N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.32 EUR
13+5.86 EUR
21+3.53 EUR
22+3.33 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMJ36N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N60FD
WMJ38N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB26D3FAE73C0C4&compId=WMx38N65C2.pdf?ci_sign=e673a9db466554b7f807d4621d8ef54817bd5ed8
WMJ38N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ38N65FD
WMJ38N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ3N150D1
WMJ3N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
32+2.25 EUR
43+1.69 EUR
54+1.33 EUR
57+1.26 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMJ4N150D1
WMJ4N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
32+2.26 EUR
43+1.7 EUR
55+1.32 EUR
58+1.24 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60C4
WMJ53N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.08 EUR
12+6.46 EUR
18+4.15 EUR
19+3.92 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N60F2
WMJ53N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
16+4.5 EUR
17+4.29 EUR
30+4.13 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N65FD
WMJ53N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 53A; 378W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Power dissipation: 378W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ60N60EM
WMJ60N60EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.22 EUR
8+9.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ69N30DMH
WMJ69N30DMH
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.05 EUR
13+5.75 EUR
15+4.85 EUR
16+4.58 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60C4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EEF1F39AF1E80C4&compId=WMJ80N60C4.pdf?ci_sign=7ead3b04bb3dfa6f94eae41389d42abca306e18c
WMJ80N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 375ns
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.46 EUR
13+5.81 EUR
14+5.49 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60EM
WMJ80N60EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26 EUR
6+12.21 EUR
7+11.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60F2
WMJ80N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.95 EUR
6+11.91 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65C4
WMJ80N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.63 EUR
10+7.19 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65F2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087BFC5F071C0D3&compId=WMJ80N65F2.pdf?ci_sign=f874d423275e6f0a6769a5792cab93bd755bbb1b
WMJ80N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.53 EUR
12+6.03 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80R160S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 15A; Idm: 96A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80R260S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 78A
Power dissipation: 227W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60C4
WMJ90N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.58 EUR
9+8.39 EUR
10+7.94 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60F2
WMJ90N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.15 EUR
8+8.94 EUR
9+8.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65F2
WMJ90N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 650V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.15 EUR
7+10.35 EUR
8+9.78 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR
WMJ90N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 183nC
Technology: WMOS™ SR
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 350A
Case: TO247-3
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.4 EUR
10+7.15 EUR
120+6.96 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90R260S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 310W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 39.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4
WMJ99N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.4 EUR
7+10.72 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2
WMJ99N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.96 EUR
6+12.51 EUR
7+11.83 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1
WMJ9N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Drain current: 9A
On-state resistance: 2.9Ω
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85.2nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.94 EUR
8+9.54 EUR
13+5.52 EUR
14+5.21 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1
WMJP32N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247PLUS
Mounting: THT
Kind of package: tube
On-state resistance: 0.11Ω
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 40A
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.16 EUR
15+4.93 EUR
24+3.09 EUR
25+2.93 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK020N06HG4
WMK020N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N08HGD
WMK028N08HGD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS
WMK028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4
WMK030N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06LG4
WMK030N06LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS
WMK036N12HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMK037N10HGS
WMK037N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 680A; 215.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Pulsed drain current: 680A
Power dissipation: 215.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Gate charge: 86.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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