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WMB140NV6LG4 WMB140NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Gate charge: 14nC
On-state resistance: 14mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Pulsed drain current: 136A
Case: PDFN5060-8
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
188+0.38 EUR
231+0.31 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 97
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WMB14N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
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WMB150N03TS WMB150N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
90+0.8 EUR
Mindestbestellmenge: 88
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WMB175DN10LG4 WMB175DN10LG4 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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64+1.13 EUR
77+0.93 EUR
98+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 64
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WMB175N10HG4 WMB175N10HG4 WAYON pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB6885536934760D4&compId=WMB175N10HG4.pdf?ci_sign=2c1d364da4857ebfe0812888a9e8e3f962a0bfe4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
auf Bestellung 1766 Stücke:
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71+1.02 EUR
102+0.71 EUR
169+0.42 EUR
241+0.3 EUR
254+0.28 EUR
Mindestbestellmenge: 71
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WMB175N10LG4 WMB175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2490 Stücke:
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112+0.64 EUR
190+0.38 EUR
211+0.34 EUR
227+0.32 EUR
239+0.3 EUR
500+0.29 EUR
Mindestbestellmenge: 112
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WMB18N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB26DN06TS WMB26DN06TS WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 26A; Idm: 104A; 39W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
180+0.4 EUR
200+0.36 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 107
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WMB340N20HG2 WMB340N20HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
41+1.77 EUR
43+1.67 EUR
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WMB40N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB5C985D0CC0DF&compId=WMx40N20JN.pdf?ci_sign=c9b00f28833ae8114af1989787bb1ab2454004d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
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WMB46N03T1 WMB46N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
268+0.27 EUR
321+0.22 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 129
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WMB50N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB7C55EB1C40DF&compId=WMx50N20JN.pdf?ci_sign=877202bcb6657740029e20258de8a4a07cdd67a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
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WMB50P03TS WMB50P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
203+0.35 EUR
247+0.29 EUR
313+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 117
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WMB510N15HG2 WMB510N15HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
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63+1.14 EUR
88+0.82 EUR
90+0.8 EUR
Mindestbestellmenge: 63
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WMB56N04T1 WMB56N04T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 35.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
219+0.33 EUR
265+0.27 EUR
334+0.21 EUR
355+0.2 EUR
Mindestbestellmenge: 125
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WMB60P02TS WMB60P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
212+0.34 EUR
235+0.3 EUR
300+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 129
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WMB70N04T1 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9C93BABC0EF580D3&compId=WMB70N04T1.pdf?ci_sign=f07a99456192a6224d4dd22f8aea01c0b357adc5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 146A; 51W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 146A
Power dissipation: 51W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB81N03T1 WMB81N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 324A
Power dissipation: 59W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
183+0.39 EUR
224+0.32 EUR
283+0.25 EUR
300+0.24 EUR
Mindestbestellmenge: 95
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WMB83N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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WMB85N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EBCA25C8D0E0DF&compId=WMx85N20JN.pdf?ci_sign=8a36d449d26d3e5a72bcbacd22517098dc69a3d2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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WMB93N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
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WMF04N60C2 WMF04N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD87CE00F67C0C4&compId=WMF04N60C2.pdf?ci_sign=98162057cea0c9e0a8887b110df732dec6bd223c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMF04N65C2 WMF04N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD882DC214500C4&compId=WMF04N65C2.pdf?ci_sign=33031bc257c11798fcd11d3425426dbd4f6d0370 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
169+0.42 EUR
201+0.36 EUR
229+0.31 EUR
247+0.29 EUR
261+0.27 EUR
500+0.26 EUR
Mindestbestellmenge: 152
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WMF04N70C2 WMF04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD888679EA1A0C4&compId=WMF04N70C2.pdf?ci_sign=72e7f34bea9246372f3312f9b422b7696b018cfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMF05N65MM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.8A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF06N80M3 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Case: SOT223
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF06N90C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF07N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
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WMF07N65C4 WMF07N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47E7EBF8140D5&compId=WMF07N65C4.pdf?ci_sign=6e0d51a0b0fb47c8afeca1a7187b64ad5be71e6a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
104+0.69 EUR
123+0.58 EUR
140+0.51 EUR
167+0.43 EUR
177+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 93
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WMF08N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF08N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMF09N60C2 WMF09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD89BD8ADBAA0C4&compId=WMF09N60C2.pdf?ci_sign=1b626106b7d0ec7b9f82db25f0883cf7db8cafd5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF09N65C2 WMF09N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A01F159460C4&compId=WMF09N65C2.pdf?ci_sign=f00901e5a5392f7d1efd1dfa5e51011e7365378f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF09N70C2 WMF09N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A4D4690C80C4&compId=WMF09N70C2.pdf?ci_sign=1f366c929c1cc27c6c32f3fb12987667dbdf8370 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N60C2 WMF10N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A8BCEF6920C4&compId=WMF10N60C2.pdf?ci_sign=1eecff99283ecee9eb5dc742284ed246b2e32a6e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 419 Stücke:
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109+0.66 EUR
120+0.6 EUR
143+0.5 EUR
162+0.44 EUR
171+0.42 EUR
174+0.41 EUR
180+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 109
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WMF10N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
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WMF10N65C2 WMF10N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8ACB16C61A0C4&compId=WMF10N65C2.pdf?ci_sign=0f3e72560d9b3c2d1eeb84a53c412550a82ca723 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47868E18E20D5&compId=WMF10N65C4.pdf?ci_sign=f085d6596d641bcb61a7e31ad34b01713d8accce Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF10N70C2 WMF10N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B13BF1C9E0C4&compId=WMF10N70C2.pdf?ci_sign=35b8f2bc9855c84ae25858f08d8583e6742570e0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF18N20JN WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; SOT223
Case: SOT223
Mounting: SMD
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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WMG04N70C2 WMG04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMG07N60C2 WMG07N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG07N65C2 WMG07N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG09N60C2 WMG09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMG09N65C2 WMG09N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91665E42DA0C4&compId=WMx09N65C2.pdf?ci_sign=c87b0a4bbfcab7cbad08446f5d75049cd954c7fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMG09N70C2 WMG09N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91D3DA07080C4&compId=WMx09N70C2.pdf?ci_sign=d1e647a5efc12ee6e1b3cd5838cbc8bc02b32049 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH04N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B8B695AF40C4&compId=WMx04N60C2.pdf?ci_sign=ce9ca007ce4f086c3a994029acabe65c37514598 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMH04N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMH07N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMH07N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMH09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH09N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91665E42DA0C4&compId=WMx09N65C2.pdf?ci_sign=c87b0a4bbfcab7cbad08446f5d75049cd954c7fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH09N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91D3DA07080C4&compId=WMx09N70C2.pdf?ci_sign=d1e647a5efc12ee6e1b3cd5838cbc8bc02b32049 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH7N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
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WMI30N60D1 WMI30N60D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 290 Stücke:
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24+2.99 EUR
30+2.39 EUR
40+1.79 EUR
56+1.29 EUR
59+1.22 EUR
Mindestbestellmenge: 24
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WMJ020N10HGS WMJ020N10HGS WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD094D1EDF9211660E1&compId=WMJ020N10HGS.pdf?ci_sign=d2030aa4cfaf71043ae082e9d73859951c71b0ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
auf Bestellung 284 Stücke:
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20+3.65 EUR
21+3.46 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 20
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WMJ10N80D1 WMJ10N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 219 Stücke:
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37+1.96 EUR
46+1.56 EUR
61+1.17 EUR
81+0.89 EUR
85+0.84 EUR
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WMB140NV6LG4
WMB140NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Gate charge: 14nC
On-state resistance: 14mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Pulsed drain current: 136A
Case: PDFN5060-8
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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Anzahl Preis
97+0.74 EUR
188+0.38 EUR
231+0.31 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 97
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WMB14N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB150N03TS
WMB150N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
90+0.8 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
WMB175DN10LG4
WMB175DN10LG4
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
77+0.93 EUR
98+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMB175N10HG4 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB6885536934760D4&compId=WMB175N10HG4.pdf?ci_sign=2c1d364da4857ebfe0812888a9e8e3f962a0bfe4
WMB175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
auf Bestellung 1766 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
102+0.71 EUR
169+0.42 EUR
241+0.3 EUR
254+0.28 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMB175N10LG4
WMB175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
190+0.38 EUR
211+0.34 EUR
227+0.32 EUR
239+0.3 EUR
500+0.29 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMB18N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB26DN06TS
WMB26DN06TS
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 26A; Idm: 104A; 39W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
180+0.4 EUR
200+0.36 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMB340N20HG2
WMB340N20HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
41+1.77 EUR
43+1.67 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMB40N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB5C985D0CC0DF&compId=WMx40N20JN.pdf?ci_sign=c9b00f28833ae8114af1989787bb1ab2454004d0
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB46N03T1
WMB46N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
268+0.27 EUR
321+0.22 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMB50N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB7C55EB1C40DF&compId=WMx50N20JN.pdf?ci_sign=877202bcb6657740029e20258de8a4a07cdd67a9
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB50P03TS
WMB50P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
203+0.35 EUR
247+0.29 EUR
313+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMB510N15HG2
WMB510N15HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
88+0.82 EUR
90+0.8 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
WMB56N04T1
WMB56N04T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 35.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
219+0.33 EUR
265+0.27 EUR
334+0.21 EUR
355+0.2 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMB60P02TS
WMB60P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
212+0.34 EUR
235+0.3 EUR
300+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMB70N04T1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9C93BABC0EF580D3&compId=WMB70N04T1.pdf?ci_sign=f07a99456192a6224d4dd22f8aea01c0b357adc5
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 146A; 51W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 146A
Power dissipation: 51W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB81N03T1
WMB81N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 81A; Idm: 324A; 59W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 324A
Power dissipation: 59W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
183+0.39 EUR
224+0.32 EUR
283+0.25 EUR
300+0.24 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMB83N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB85N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EBCA25C8D0E0DF&compId=WMx85N20JN.pdf?ci_sign=8a36d449d26d3e5a72bcbacd22517098dc69a3d2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB93N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF04N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD87CE00F67C0C4&compId=WMF04N60C2.pdf?ci_sign=98162057cea0c9e0a8887b110df732dec6bd223c
WMF04N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF04N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD882DC214500C4&compId=WMF04N65C2.pdf?ci_sign=33031bc257c11798fcd11d3425426dbd4f6d0370
WMF04N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
169+0.42 EUR
201+0.36 EUR
229+0.31 EUR
247+0.29 EUR
261+0.27 EUR
500+0.26 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WMF04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD888679EA1A0C4&compId=WMF04N70C2.pdf?ci_sign=72e7f34bea9246372f3312f9b422b7696b018cfe
WMF04N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF05N65MM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.8A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF06N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Case: SOT223
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF06N90C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF07N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF07N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47E7EBF8140D5&compId=WMF07N65C4.pdf?ci_sign=6e0d51a0b0fb47c8afeca1a7187b64ad5be71e6a
WMF07N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
104+0.69 EUR
123+0.58 EUR
140+0.51 EUR
167+0.43 EUR
177+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
WMF08N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF08N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD89BD8ADBAA0C4&compId=WMF09N60C2.pdf?ci_sign=1b626106b7d0ec7b9f82db25f0883cf7db8cafd5
WMF09N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF09N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A01F159460C4&compId=WMF09N65C2.pdf?ci_sign=f00901e5a5392f7d1efd1dfa5e51011e7365378f
WMF09N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF09N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A4D4690C80C4&compId=WMF09N70C2.pdf?ci_sign=1f366c929c1cc27c6c32f3fb12987667dbdf8370
WMF09N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A8BCEF6920C4&compId=WMF10N60C2.pdf?ci_sign=1eecff99283ecee9eb5dc742284ed246b2e32a6e
WMF10N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
120+0.6 EUR
143+0.5 EUR
162+0.44 EUR
171+0.42 EUR
174+0.41 EUR
180+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8ACB16C61A0C4&compId=WMF10N65C2.pdf?ci_sign=0f3e72560d9b3c2d1eeb84a53c412550a82ca723
WMF10N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47868E18E20D5&compId=WMF10N65C4.pdf?ci_sign=f085d6596d641bcb61a7e31ad34b01713d8accce
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B13BF1C9E0C4&compId=WMF10N70C2.pdf?ci_sign=35b8f2bc9855c84ae25858f08d8583e6742570e0
WMF10N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF18N20JN
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; SOT223
Case: SOT223
Mounting: SMD
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c
WMG04N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG07N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59
WMG07N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG07N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91
WMG07N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12
WMG09N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG09N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91665E42DA0C4&compId=WMx09N65C2.pdf?ci_sign=c87b0a4bbfcab7cbad08446f5d75049cd954c7fe
WMG09N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG09N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91D3DA07080C4&compId=WMx09N70C2.pdf?ci_sign=d1e647a5efc12ee6e1b3cd5838cbc8bc02b32049
WMG09N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B8B695AF40C4&compId=WMx04N60C2.pdf?ci_sign=ce9ca007ce4f086c3a994029acabe65c37514598
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH07N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH07N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91665E42DA0C4&compId=WMx09N65C2.pdf?ci_sign=c87b0a4bbfcab7cbad08446f5d75049cd954c7fe
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH09N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD91D3DA07080C4&compId=WMx09N70C2.pdf?ci_sign=d1e647a5efc12ee6e1b3cd5838cbc8bc02b32049
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO251S2
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH7N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMI30N60D1
WMI30N60D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
30+2.39 EUR
40+1.79 EUR
56+1.29 EUR
59+1.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMJ020N10HGS pVersion=0046&contRep=ZT&docId=005056AB281E1FD094D1EDF9211660E1&compId=WMJ020N10HGS.pdf?ci_sign=d2030aa4cfaf71043ae082e9d73859951c71b0ae
WMJ020N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 250nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 347.2W
Drain-source voltage: 100V
Drain current: 288A
Pulsed drain current: 1152A
Case: TO247-3
Kind of package: tube
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
21+3.46 EUR
27+2.7 EUR
28+2.56 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
WMJ10N80D1
WMJ10N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
46+1.56 EUR
61+1.17 EUR
81+0.89 EUR
85+0.84 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
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