| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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WM05N03G | WAYON |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM05N03M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2164 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WM05P02F | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD Case: DFN1006-3 Power dissipation: 0.35W Gate charge: 2.1nC Polarisation: unipolar Version: ESD Drain current: -0.25A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.2Ω Mounting: SMD Pulsed drain current: -1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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WM05P02G | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW Case: SOT323 Power dissipation: 0.3W Gate charge: 1.5nC Polarisation: unipolar Version: ESD Drain current: -200mA Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3Ω Mounting: SMD Pulsed drain current: -0.8A |
auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM05P02M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW Case: SOT23 Power dissipation: 0.38W Gate charge: 1.5nC Polarisation: unipolar Version: ESD Drain current: -200mA Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3Ω Mounting: SMD Pulsed drain current: -0.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WM05P20M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WM06N03FB | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.36W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WM06N03FE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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WM06N03GE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM06N03HE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WM06N03LE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM06N03ME | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW Pulsed drain current: 0.5A Power dissipation: 0.2W Gate charge: 1.5nC Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT323 On-state resistance: 6Ω Mounting: SMD |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23 Pulsed drain current: 0.8A Power dissipation: 0.35W Gate charge: 1.5nC Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 6Ω Mounting: SMD |
auf Bestellung 572 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Pulsed drain current: 8A Power dissipation: 1.2W Gate charge: 5.3nC Polarisation: unipolar Drain current: 2A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.28Ω Mounting: SMD |
auf Bestellung 1897 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Pulsed drain current: 13.2A Power dissipation: 1.5W Gate charge: 4nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.13Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WM10N35M2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Pulsed drain current: 14A Power dissipation: 1.65W Gate charge: 21nC Polarisation: unipolar Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 90mΩ Mounting: SMD |
auf Bestellung 1294 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM10N35M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Pulsed drain current: 14A Power dissipation: 2W Gate charge: 21nC Polarisation: unipolar Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23-6 On-state resistance: 0.1Ω Mounting: SMD |
auf Bestellung 2883 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WM4C62160A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 8A Power dissipation: 1.7W Case: CSP1515-4 Gate-source voltage: ±12V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain Version: ESD |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WMAA4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 14.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7050 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| WMAA4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WMAA4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WMAA6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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WMB007N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 220A; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 220A Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB009N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 200A Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB010N04LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 268A Pulsed drain current: 1072A Power dissipation: 114W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 118nC |
auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB014N04LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W Drain current: 165A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN5060-8 On-state resistance: 1.4mΩ Mounting: SMD Pulsed drain current: 660A Power dissipation: 62.5W Gate charge: 116nC Polarisation: unipolar |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMB014N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 143.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMB017N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W Mounting: SMD Pulsed drain current: 400A Power dissipation: 30.5W Gate charge: 46nC Polarisation: unipolar Drain current: 63.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN5060-8 On-state resistance: 2.5mΩ |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 50W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 500A Gate charge: 29.5nC Kind of package: reel; tape |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 174A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 696A Gate charge: 69nC Kind of package: reel; tape |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 251A Power dissipation: 49W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB025N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 560A Gate charge: 68nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMB025N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 560A Gate charge: 73.5nC Kind of package: reel; tape |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB027N08HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 195A Power dissipation: 192.3W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 780A Gate charge: 77.9nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMB034N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 72.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB034N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Pulsed drain current: 500A Power dissipation: 89.2W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB037N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 544A Power dissipation: 142W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 79.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMB040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Power dissipation: 28W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 121A Gate charge: 15nC Kind of package: reel; tape |
auf Bestellung 423 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB040N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Power dissipation: 122.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 520A Gate charge: 78.5nC |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB043N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 131.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 111.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 260A Gate charge: 16nC Kind of package: reel; tape |
auf Bestellung 232 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMB060N08HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8 Mounting: SMD Pulsed drain current: 328A Power dissipation: 75W Gate charge: 41nC Polarisation: unipolar Drain current: 82A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN5060-8 On-state resistance: 6mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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WMB060N08LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8 Mounting: SMD Pulsed drain current: 310A Power dissipation: 96W Gate charge: 45nC Polarisation: unipolar Drain current: 98A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN5060-8 On-state resistance: 6mΩ |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB060N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 380A Gate charge: 81.8nC Kind of package: reel; tape |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB060N10LGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 380A Gate charge: 75nC Kind of package: reel; tape |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.5A Power dissipation: 30.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 168A Gate charge: 7nC Kind of package: reel; tape |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB080N10HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 296A Gate charge: 29nC Kind of package: reel; tape |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46.8A Power dissipation: 84W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 296A Gate charge: 30.8nC Kind of package: reel; tape |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB090DN04LG2 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 28.5A Pulsed drain current: 180A Power dissipation: 31.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMB090N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Power dissipation: 32.9W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhancement Pulsed drain current: 200A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMB090NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 45A Pulsed drain current: 180A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB100N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 500A |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB100N07TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W Case: PDFN5060-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 400A Power dissipation: 125W Gate charge: 92nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 70V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 7.4mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMB100P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W Mounting: SMD Pulsed drain current: -400A Power dissipation: 73.5W Gate charge: 134nC Polarisation: unipolar Drain current: -100A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN5060-8 On-state resistance: 3.9mΩ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB108N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 108A Pulsed drain current: 432A Power dissipation: 69W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB115N15HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 75A; Idm: 300A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 75A Power dissipation: 125W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 300A |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB120P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W Mounting: SMD Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN5060-8 On-state resistance: 7mΩ Pulsed drain current: -480A Power dissipation: 168.9W Gate charge: 84nC Polarisation: unipolar Drain current: -120A Kind of channel: enhancement Drain-source voltage: -60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WM05N03G |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05N03M |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2164 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05P02F |
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Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Case: DFN1006-3
Power dissipation: 0.35W
Gate charge: 2.1nC
Polarisation: unipolar
Version: ESD
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2Ω
Mounting: SMD
Pulsed drain current: -1A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Case: DFN1006-3
Power dissipation: 0.35W
Gate charge: 2.1nC
Polarisation: unipolar
Version: ESD
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2Ω
Mounting: SMD
Pulsed drain current: -1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM05P02G |
|
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Case: SOT323
Power dissipation: 0.3W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Case: SOT323
Power dissipation: 0.3W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
auf Bestellung 2486 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05P02M |
|
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW
Case: SOT23
Power dissipation: 0.38W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW
Case: SOT23
Power dissipation: 0.38W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM05P20M |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| WM06N03FB |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03FE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03GE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
| WM06N03HE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03LE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
| WM06N03ME |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Gate charge: 1.5nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Gate charge: 1.5nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 6Ω
Mounting: SMD
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)
| WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Gate charge: 1.5nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 6Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Gate charge: 1.5nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 6Ω
Mounting: SMD
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Pulsed drain current: 8A
Power dissipation: 1.2W
Gate charge: 5.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.28Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Pulsed drain current: 8A
Power dissipation: 1.2W
Gate charge: 5.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.28Ω
Mounting: SMD
auf Bestellung 1897 Stücke:
Lieferzeit 14-21 Tag (e)
| WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Gate charge: 4nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.13Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Gate charge: 4nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.13Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| WM10N35M2 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Pulsed drain current: 14A
Power dissipation: 1.65W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 90mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Pulsed drain current: 14A
Power dissipation: 1.65W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 90mΩ
Mounting: SMD
auf Bestellung 1294 Stücke:
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| WM10N35M3 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Pulsed drain current: 14A
Power dissipation: 2W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23-6
On-state resistance: 0.1Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Pulsed drain current: 14A
Power dissipation: 2W
Gate charge: 21nC
Polarisation: unipolar
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23-6
On-state resistance: 0.1Ω
Mounting: SMD
auf Bestellung 2883 Stücke:
Lieferzeit 14-21 Tag (e)
| WM4C62160A |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1.7W
Case: CSP1515-4
Gate-source voltage: ±12V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1.7W
Case: CSP1515-4
Gate-source voltage: ±12V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WMAA4N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 14.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 14.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7050 Stücke
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Stück im Wert von UAH
| WMAA4N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA6N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB007N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 220A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 220A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 220A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 220A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB009N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB010N04LG4 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 268A
Pulsed drain current: 1072A
Power dissipation: 114W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 118nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 268A
Pulsed drain current: 1072A
Power dissipation: 114W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 118nC
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB014N04LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 1.4mΩ
Mounting: SMD
Pulsed drain current: 660A
Power dissipation: 62.5W
Gate charge: 116nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 1.4mΩ
Mounting: SMD
Pulsed drain current: 660A
Power dissipation: 62.5W
Gate charge: 116nC
Polarisation: unipolar
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB014N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB014N06LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB017N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 30.5W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 63.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 2.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 30.5W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 63.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 2.5mΩ
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB020N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 500A
Gate charge: 29.5nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 500A
Gate charge: 29.5nC
Kind of package: reel; tape
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB020N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 696A
Gate charge: 69nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 696A
Gate charge: 69nC
Kind of package: reel; tape
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB023N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB025N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 560A
Gate charge: 68nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 560A
Gate charge: 68nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB025N06LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 560A
Gate charge: 73.5nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 560A
Gate charge: 73.5nC
Kind of package: reel; tape
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB027N08HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 780A
Gate charge: 77.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 780A
Gate charge: 77.9nC
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Im Einkaufswagen
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| WMB034N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB034N06LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB037N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| WMB040N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 121A
Gate charge: 15nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 121A
Gate charge: 15nC
Kind of package: reel; tape
auf Bestellung 423 Stücke:
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| WMB040N08HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 520A
Gate charge: 78.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 520A
Gate charge: 78.5nC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB043N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB043N10LGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
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| WMB050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 260A
Gate charge: 16nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 260A
Gate charge: 16nC
Kind of package: reel; tape
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB060N08HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8
Mounting: SMD
Pulsed drain current: 328A
Power dissipation: 75W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 6mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 328A; 75W; PDFN5060-8
Mounting: SMD
Pulsed drain current: 328A
Power dissipation: 75W
Gate charge: 41nC
Polarisation: unipolar
Drain current: 82A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 6mΩ
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Im Einkaufswagen
Stück im Wert von UAH
| WMB060N08LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Mounting: SMD
Pulsed drain current: 310A
Power dissipation: 96W
Gate charge: 45nC
Polarisation: unipolar
Drain current: 98A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 6mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Mounting: SMD
Pulsed drain current: 310A
Power dissipation: 96W
Gate charge: 45nC
Polarisation: unipolar
Drain current: 98A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 6mΩ
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB060N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 380A
Gate charge: 81.8nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 380A
Gate charge: 81.8nC
Kind of package: reel; tape
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB060N10LGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 380A
Gate charge: 75nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 380A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 380A
Gate charge: 75nC
Kind of package: reel; tape
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB080N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 7nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 7nC
Kind of package: reel; tape
auf Bestellung 500 Stücke:
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| WMB080N10HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 296A
Gate charge: 29nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 296A
Gate charge: 29nC
Kind of package: reel; tape
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB080N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 296A
Gate charge: 30.8nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 296A
Gate charge: 30.8nC
Kind of package: reel; tape
auf Bestellung 50 Stücke:
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| WMB090DN04LG2 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28.5A; Idm: 180A; 31.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28.5A
Pulsed drain current: 180A
Power dissipation: 31.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB090N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhancement
Pulsed drain current: 200A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 32.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhancement
Pulsed drain current: 200A
Kind of package: reel; tape
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Im Einkaufswagen
Stück im Wert von UAH
| WMB090NV6LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 45A; Idm: 180A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB100N04TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 500A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 500A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB100N07TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 125W
Gate charge: 92nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 70V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 125W
Gate charge: 92nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 70V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB100P03TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Mounting: SMD
Pulsed drain current: -400A
Power dissipation: 73.5W
Gate charge: 134nC
Polarisation: unipolar
Drain current: -100A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 3.9mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Mounting: SMD
Pulsed drain current: -400A
Power dissipation: 73.5W
Gate charge: 134nC
Polarisation: unipolar
Drain current: -100A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 3.9mΩ
auf Bestellung 1 Stücke:
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| WMB108N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB115N15HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75A; Idm: 300A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 75A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75A; Idm: 300A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 75A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| WMB120P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 7mΩ
Pulsed drain current: -480A
Power dissipation: 168.9W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 7mΩ
Pulsed drain current: -480A
Power dissipation: 168.9W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -60V
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