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WMB100N07TS WMB100N07TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB100P03TS WMB100P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
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WMB108N03T1 WMB108N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
201+0.36 EUR
224+0.32 EUR
283+0.25 EUR
300+0.24 EUR
Mindestbestellmenge: 120
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WMB119N10LG2 WMB119N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
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WMB120P06TS WMB120P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB128N10T2 WMB128N10T2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 128A
Pulsed drain current: 512A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
57+1.26 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 54
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WMB129N10T2 WMB129N10T2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
66+1.09 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 62
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WMB140DNV6LG4 WMB140DNV6LG4 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
145+0.49 EUR
161+0.44 EUR
191+0.37 EUR
203+0.35 EUR
Mindestbestellmenge: 87
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WMB140NV6LG4 WMB140NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
188+0.38 EUR
230+0.31 EUR
291+0.25 EUR
309+0.23 EUR
Mindestbestellmenge: 97
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WMB14N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
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WMB150N03TS WMB150N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
100+0.72 EUR
Mindestbestellmenge: 91
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WMB175DN10LG4 WMB175DN10LG4 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
77+0.93 EUR
98+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 64
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WMB175N10HG4 WMB175N10HG4 WAYON pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB6885536934760D4&compId=WMB175N10HG4.pdf?ci_sign=2c1d364da4857ebfe0812888a9e8e3f962a0bfe4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
auf Bestellung 1776 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
100+0.72 EUR
167+0.43 EUR
241+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 70
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WMB175N10LG4 WMB175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
186+0.38 EUR
207+0.35 EUR
227+0.32 EUR
234+0.31 EUR
241+0.3 EUR
500+0.29 EUR
Mindestbestellmenge: 112
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WMB18N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB26DN06TS WMB26DN06TS WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 26A; Idm: 104A; 39W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
180+0.4 EUR
200+0.36 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 107
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WMB26N06TS WMB26N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 43.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
293+0.24 EUR
353+0.2 EUR
371+0.19 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 125
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WMB31430DN WMB31430DN WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
57+1.26 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 54
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WMB340N20HG2 WMB340N20HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 31
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WMB40N04TS WMB40N04TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
280+0.26 EUR
336+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 136
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WMB40N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB5C985D0CC0DF&compId=WMx40N20JN.pdf?ci_sign=c9b00f28833ae8114af1989787bb1ab2454004d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
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WMB46N03T1 WMB46N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
278+0.26 EUR
334+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMB50N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB7C55EB1C40DF&compId=WMx50N20JN.pdf?ci_sign=877202bcb6657740029e20258de8a4a07cdd67a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
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WMB50P03TS WMB50P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
203+0.35 EUR
247+0.29 EUR
313+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 117
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WMB510N15HG2 WMB510N15HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
88+0.82 EUR
90+0.8 EUR
Mindestbestellmenge: 63
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WMB56N04T1 WMB56N04T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 35.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
219+0.33 EUR
265+0.27 EUR
334+0.21 EUR
355+0.2 EUR
Mindestbestellmenge: 125
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WMB60P02TS WMB60P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
227+0.32 EUR
252+0.28 EUR
298+0.24 EUR
315+0.23 EUR
Mindestbestellmenge: 139
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WMB60P03TA WMB60P03TA WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -240A; 48W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 48W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
157+0.46 EUR
174+0.41 EUR
207+0.35 EUR
219+0.33 EUR
Mindestbestellmenge: 93
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WMB70P02TS WMB70P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 43.1W
Case: PDFN5060-8
Gate-source voltage: ±12V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
156+0.46 EUR
174+0.41 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 93
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WMB83N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; 180ns
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain current: 31A
Gate-source voltage: ±20V
Power dissipation: 92W
Pulsed drain current: 145A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
Reverse recovery time: 180ns
On-state resistance: 31mΩ
Produkt ist nicht verfügbar
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WMB85N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EBCA25C8D0E0DF&compId=WMx85N20JN.pdf?ci_sign=8a36d449d26d3e5a72bcbacd22517098dc69a3d2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
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WMB90N02TS WMB90N02TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 47W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 380 Stücke:
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WMB93N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; 190ns
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 180W
Pulsed drain current: 280A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 190ns
On-state resistance: 17mΩ
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WMF04N60C2 WMF04N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD87CE00F67C0C4&compId=WMF04N60C2.pdf?ci_sign=98162057cea0c9e0a8887b110df732dec6bd223c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
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WMF04N65C2 WMF04N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD882DC214500C4&compId=WMF04N65C2.pdf?ci_sign=33031bc257c11798fcd11d3425426dbd4f6d0370 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 2149 Stücke:
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261+0.27 EUR
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WMF04N70C2 WMF04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD888679EA1A0C4&compId=WMF04N70C2.pdf?ci_sign=72e7f34bea9246372f3312f9b422b7696b018cfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
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WMF05N65MM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.8A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMF06N80M3 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Case: SOT223
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF06N90C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMF07N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
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WMF07N65C4 WMF07N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47E7EBF8140D5&compId=WMF07N65C4.pdf?ci_sign=6e0d51a0b0fb47c8afeca1a7187b64ad5be71e6a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
auf Bestellung 2310 Stücke:
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122+0.59 EUR
139+0.51 EUR
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1000+0.4 EUR
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WMF07N70C2 WMF07N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD895FACC00C0C4&compId=WMF07N70C2.pdf?ci_sign=cf2245ee6e9a4d2767bdcb6ec5e9bc36fcb9caf8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 5W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1316 Stücke:
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500+0.32 EUR
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WMF08N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF08N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF09N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF09N60C2 WMF09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD89BD8ADBAA0C4&compId=WMF09N60C2.pdf?ci_sign=1b626106b7d0ec7b9f82db25f0883cf7db8cafd5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF10N60C2 WMF10N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A8BCEF6920C4&compId=WMF10N60C2.pdf?ci_sign=1eecff99283ecee9eb5dc742284ed246b2e32a6e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 420 Stücke:
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WMF10N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
Produkt ist nicht verfügbar
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WMF10N65C2 WMF10N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8ACB16C61A0C4&compId=WMF10N65C2.pdf?ci_sign=0f3e72560d9b3c2d1eeb84a53c412550a82ca723 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF10N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47868E18E20D5&compId=WMF10N65C4.pdf?ci_sign=f085d6596d641bcb61a7e31ad34b01713d8accce Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF10N70C2 WMF10N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B13BF1C9E0C4&compId=WMF10N70C2.pdf?ci_sign=35b8f2bc9855c84ae25858f08d8583e6742570e0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMF18N20JN WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMG04N70C2 WMG04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMG07N60C2 WMG07N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMG07N65C2 WMG07N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMG07N70C2 WMG07N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8E830FB97C0C4&compId=WMx07N70C2.pdf?ci_sign=835d03b0cb028f47c9c9a8280204170f11899544 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMG09N60C2 WMG09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMH04N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B8B695AF40C4&compId=WMx04N60C2.pdf?ci_sign=ce9ca007ce4f086c3a994029acabe65c37514598 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMH04N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMH04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMB100N07TS
WMB100N07TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB100P03TS
WMB100P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; Idm: -400A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Pulsed drain current: -400A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 134nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
WMB108N03T1
WMB108N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
201+0.36 EUR
224+0.32 EUR
283+0.25 EUR
300+0.24 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMB119N10LG2
WMB119N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 75W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMB120P06TS
WMB120P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -120A; Idm: -480A; 168.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -120A
Pulsed drain current: -480A
Power dissipation: 168.9W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB128N10T2
WMB128N10T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 128A
Pulsed drain current: 512A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
57+1.26 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
WMB129N10T2
WMB129N10T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 129A; Idm: 402A; 127.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 129A
Pulsed drain current: 402A
Power dissipation: 127.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
66+1.09 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMB140DNV6LG4
WMB140DNV6LG4
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
145+0.49 EUR
161+0.44 EUR
191+0.37 EUR
203+0.35 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
WMB140NV6LG4
WMB140NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
188+0.38 EUR
230+0.31 EUR
291+0.25 EUR
309+0.23 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
WMB14N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB150N03TS
WMB150N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
100+0.72 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
WMB175DN10LG4
WMB175DN10LG4
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 39A; Idm: 156A; 59.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 59.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
77+0.93 EUR
98+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMB175N10HG4 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB6885536934760D4&compId=WMB175N10HG4.pdf?ci_sign=2c1d364da4857ebfe0812888a9e8e3f962a0bfe4
WMB175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 29A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 30ns
auf Bestellung 1776 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
100+0.72 EUR
167+0.43 EUR
241+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
WMB175N10LG4
WMB175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 71.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
186+0.38 EUR
207+0.35 EUR
227+0.32 EUR
234+0.31 EUR
241+0.3 EUR
500+0.29 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMB18N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB26DN06TS
WMB26DN06TS
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 26A; Idm: 104A; 39W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
180+0.4 EUR
200+0.36 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMB26N06TS
WMB26N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 104A; 43.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 43.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
293+0.24 EUR
353+0.2 EUR
371+0.19 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMB31430DN
WMB31430DN
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/130A; 24/37.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/130A
Power dissipation: 24/37.8W
Case: PDFN5060D-8
Gate-source voltage: ±20V
On-state resistance: 4.5/1.3mΩ
Mounting: SMD
Gate charge: 31.1/90nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
57+1.26 EUR
68+1.06 EUR
72+1 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
WMB340N20HG2
WMB340N20HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
WMB40N04TS
WMB40N04TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
280+0.26 EUR
336+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMB40N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB5C985D0CC0DF&compId=WMx40N20JN.pdf?ci_sign=c9b00f28833ae8114af1989787bb1ab2454004d0
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB46N03T1
WMB46N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 180A; 41.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 41.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
278+0.26 EUR
334+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMB50N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EB7C55EB1C40DF&compId=WMx50N20JN.pdf?ci_sign=877202bcb6657740029e20258de8a4a07cdd67a9
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; 138ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB50P03TS
WMB50P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 39W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 39W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
203+0.35 EUR
247+0.29 EUR
313+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMB510N15HG2
WMB510N15HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
88+0.82 EUR
90+0.8 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
WMB56N04T1
WMB56N04T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 35.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
219+0.33 EUR
265+0.27 EUR
334+0.21 EUR
355+0.2 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMB60P02TS
WMB60P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 41.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 41.9W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
227+0.32 EUR
252+0.28 EUR
298+0.24 EUR
315+0.23 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMB60P03TA
WMB60P03TA
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -60A; Idm: -240A; 48W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 48W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
157+0.46 EUR
174+0.41 EUR
207+0.35 EUR
219+0.33 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
WMB70P02TS
WMB70P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -70A; Idm: -280A; 43.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -70A
Pulsed drain current: -280A
Power dissipation: 43.1W
Case: PDFN5060-8
Gate-source voltage: ±12V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
156+0.46 EUR
174+0.41 EUR
208+0.34 EUR
221+0.32 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
WMB83N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; 180ns
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain current: 31A
Gate-source voltage: ±20V
Power dissipation: 92W
Pulsed drain current: 145A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
Reverse recovery time: 180ns
On-state resistance: 31mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB85N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EBCA25C8D0E0DF&compId=WMx85N20JN.pdf?ci_sign=8a36d449d26d3e5a72bcbacd22517098dc69a3d2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB90N02TS
WMB90N02TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 47W
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
232+0.31 EUR
258+0.28 EUR
305+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMB93N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; 190ns
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 180W
Pulsed drain current: 280A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 190ns
On-state resistance: 17mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF04N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD87CE00F67C0C4&compId=WMF04N60C2.pdf?ci_sign=98162057cea0c9e0a8887b110df732dec6bd223c
WMF04N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF04N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD882DC214500C4&compId=WMF04N65C2.pdf?ci_sign=33031bc257c11798fcd11d3425426dbd4f6d0370
WMF04N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 2149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
171+0.42 EUR
203+0.35 EUR
230+0.31 EUR
246+0.29 EUR
261+0.27 EUR
500+0.26 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WMF04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD888679EA1A0C4&compId=WMF04N70C2.pdf?ci_sign=72e7f34bea9246372f3312f9b422b7696b018cfe
WMF04N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF05N65MM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.8A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF06N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Case: SOT223
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF06N90C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF07N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF07N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47E7EBF8140D5&compId=WMF07N65C4.pdf?ci_sign=6e0d51a0b0fb47c8afeca1a7187b64ad5be71e6a
WMF07N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
auf Bestellung 2310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
103+0.7 EUR
122+0.59 EUR
139+0.51 EUR
167+0.43 EUR
177+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
WMF07N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD895FACC00C0C4&compId=WMF07N70C2.pdf?ci_sign=cf2245ee6e9a4d2767bdcb6ec5e9bc36fcb9caf8
WMF07N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 5W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1316 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
136+0.53 EUR
163+0.44 EUR
182+0.39 EUR
206+0.35 EUR
218+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WMF08N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF08N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF09N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD89BD8ADBAA0C4&compId=WMF09N60C2.pdf?ci_sign=1b626106b7d0ec7b9f82db25f0883cf7db8cafd5
WMF09N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 6W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8A8BCEF6920C4&compId=WMF10N60C2.pdf?ci_sign=1eecff99283ecee9eb5dc742284ed246b2e32a6e
WMF10N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
120+0.6 EUR
143+0.5 EUR
162+0.44 EUR
171+0.42 EUR
174+0.41 EUR
180+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8ACB16C61A0C4&compId=WMF10N65C2.pdf?ci_sign=0f3e72560d9b3c2d1eeb84a53c412550a82ca723
WMF10N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDBFF47868E18E20D5&compId=WMF10N65C4.pdf?ci_sign=f085d6596d641bcb61a7e31ad34b01713d8accce
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF10N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B13BF1C9E0C4&compId=WMF10N70C2.pdf?ci_sign=35b8f2bc9855c84ae25858f08d8583e6742570e0
WMF10N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMF18N20JN
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c
WMG04N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG07N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59
WMG07N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG07N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91
WMG07N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG07N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8E830FB97C0C4&compId=WMx07N70C2.pdf?ci_sign=835d03b0cb028f47c9c9a8280204170f11899544
WMG07N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMG09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD90D8CA62340C4&compId=WMx09N60C2.pdf?ci_sign=c2500c98390796df7676a15ee5870e63b821da12
WMG09N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO251S3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8B8B695AF40C4&compId=WMx04N60C2.pdf?ci_sign=ce9ca007ce4f086c3a994029acabe65c37514598
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMH04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO251S2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO251S2
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
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