| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| WM03DP50A | WAYON | WM03DP50A-CYG Multi channel transistors |
auf Bestellung 2425 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N01G | WAYON | WM03N01G-CYG SMD N channel transistors |
auf Bestellung 2895 Stücke: Lieferzeit 7-14 Tag (e) |
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WM03N06M | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 2.4A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
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WM03N06M | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 2.4A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1792 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N09F | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.93A Pulsed drain current: 3.7A Power dissipation: 715mW Case: DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 0.65nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM03N115A | WAYON | WM03N115A-CYG SMD N channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N32M | WAYON | WM03N32M-CYG SMD N channel transistors |
auf Bestellung 2464 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N57M | WAYON | WM03N57M-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N58M | WAYON | WM03N58M-CYG SMD N channel transistors |
auf Bestellung 2464 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N58M2 | WAYON | WM03N58M2-CYG SMD N channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N86M2 | WAYON | WM03N86M2-CYG SMD N channel transistors |
auf Bestellung 1882 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P115R | WAYON | WM03P115R-CYG SMD P channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P27M | WAYON | WM03P27M-CYG SMD P channel transistors |
auf Bestellung 545 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P41M | WAYON | WM03P41M-CYG SMD P channel transistors |
auf Bestellung 650 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P42M | WAYON | WM03P42M-CYG SMD P channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P42M2 | WAYON | WM03P42M2-CYG SMD P channel transistors |
auf Bestellung 2994 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P51A | WAYON | WM03P51A-CYG SMD P channel transistors |
auf Bestellung 3834 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P56M2 | WAYON | WM03P56M2-CYG SMD P channel transistors |
auf Bestellung 2649 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P91A | WAYON | WM03P91A-CYG SMD P channel transistors |
auf Bestellung 940 Stücke: Lieferzeit 7-14 Tag (e) |
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WM04N50M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Pulsed drain current: 19A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM04N50M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Pulsed drain current: 19A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM04P50M | WAYON | WM04P50M-CYG SMD P channel transistors |
auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM04P56M2 | WAYON | WM04P56M2-CYG SMD P channel transistors |
auf Bestellung 2265 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05DP01D | WAYON | WM05DP01D-CYG Multi channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N02G | WAYON | WM05N02G-CYG SMD N channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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WM05N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 1A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM05N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N03G | WAYON | WM05N03G-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM05N03M | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2165 Stücke: Lieferzeit 14-21 Tag (e) |
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WM05N03M | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2165 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P01G | WAYON | WM05P01G-CYG SMD P channel transistors |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P01M | WAYON | WM05P01M-CYG SMD P channel transistors |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P02F | WAYON |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -250mA Pulsed drain current: -1A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM05P02G | WAYON | WM05P02G-CYG SMD P channel transistors |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P20M | WAYON | WM05P20M-CYG SMD P channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06DN03DE | WAYON | WM06DN03DE-CYG Multi channel transistors |
auf Bestellung 2754 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N03FB | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.36W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM06N03FE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WM06N03GE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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WM06N03GE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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WM06N03HE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WM06N03LE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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WM06N03LE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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WM06N03ME | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2397 Stücke: Lieferzeit 14-21 Tag (e) |
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WM06N03ME | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2397 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30M | WAYON | WM06N30M-CYG SMD N channel transistors |
auf Bestellung 962 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30MS | WAYON | WM06N30MS-CYG SMD N channel transistors |
auf Bestellung 2147 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06P17MR | WAYON | WM06P17MR-CYG SMD P channel transistors |
auf Bestellung 265 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2944 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2427 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2427 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Pulsed drain current: 13.2A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2888 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Pulsed drain current: 13.2A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2888 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N35M2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2916 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N35M2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2916 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2978 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03DP50A |
Hersteller: WAYON
WM03DP50A-CYG Multi channel transistors
WM03DP50A-CYG Multi channel transistors
auf Bestellung 2425 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 861+ | 0.083 EUR |
| 911+ | 0.079 EUR |
| 8000+ | 0.077 EUR |
| WM03N01G |
Hersteller: WAYON
WM03N01G-CYG SMD N channel transistors
WM03N01G-CYG SMD N channel transistors
auf Bestellung 2895 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2703+ | 0.026 EUR |
| 2858+ | 0.025 EUR |
| WM03N06M |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1792 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 365+ | 0.2 EUR |
| 1097+ | 0.065 EUR |
| 1792+ | 0.04 EUR |
| WM03N06M |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1792 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 365+ | 0.2 EUR |
| 1097+ | 0.065 EUR |
| 1792+ | 0.04 EUR |
| 3000+ | 0.024 EUR |
| 6000+ | 0.019 EUR |
| WM03N09F |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.93A
Pulsed drain current: 3.7A
Power dissipation: 715mW
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.93A
Pulsed drain current: 3.7A
Power dissipation: 715mW
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM03N115A |
Hersteller: WAYON
WM03N115A-CYG SMD N channel transistors
WM03N115A-CYG SMD N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.68 EUR |
| 527+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| WM03N32M |
Hersteller: WAYON
WM03N32M-CYG SMD N channel transistors
WM03N32M-CYG SMD N channel transistors
auf Bestellung 2464 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 0.45 EUR |
| 2370+ | 0.03 EUR |
| 2464+ | 0.029 EUR |
| 12000+ | 0.028 EUR |
| WM03N57M |
Hersteller: WAYON
WM03N57M-CYG SMD N channel transistors
WM03N57M-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 108+ | 0.66 EUR |
| 1520+ | 0.047 EUR |
| 1608+ | 0.044 EUR |
| WM03N58M |
Hersteller: WAYON
WM03N58M-CYG SMD N channel transistors
WM03N58M-CYG SMD N channel transistors
auf Bestellung 2464 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.53 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM03N58M2 |
Hersteller: WAYON
WM03N58M2-CYG SMD N channel transistors
WM03N58M2-CYG SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM03N86M2 |
Hersteller: WAYON
WM03N86M2-CYG SMD N channel transistors
WM03N86M2-CYG SMD N channel transistors
auf Bestellung 1882 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 177+ | 0.4 EUR |
| 1263+ | 0.057 EUR |
| 1337+ | 0.053 EUR |
| WM03P115R |
Hersteller: WAYON
WM03P115R-CYG SMD P channel transistors
WM03P115R-CYG SMD P channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 116+ | 0.62 EUR |
| 575+ | 0.12 EUR |
| WM03P27M |
Hersteller: WAYON
WM03P27M-CYG SMD P channel transistors
WM03P27M-CYG SMD P channel transistors
auf Bestellung 545 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 596+ | 0.12 EUR |
| 1640+ | 0.043 EUR |
| 12000+ | 0.026 EUR |
| WM03P41M |
Hersteller: WAYON
WM03P41M-CYG SMD P channel transistors
WM03P41M-CYG SMD P channel transistors
auf Bestellung 650 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 650+ | 0.11 EUR |
| 1366+ | 0.053 EUR |
| 12000+ | 0.032 EUR |
| WM03P42M |
Hersteller: WAYON
WM03P42M-CYG SMD P channel transistors
WM03P42M-CYG SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 2101+ | 0.034 EUR |
| 2223+ | 0.032 EUR |
| WM03P42M2 |
Hersteller: WAYON
WM03P42M2-CYG SMD P channel transistors
WM03P42M2-CYG SMD P channel transistors
auf Bestellung 2994 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.53 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM03P51A |
Hersteller: WAYON
WM03P51A-CYG SMD P channel transistors
WM03P51A-CYG SMD P channel transistors
auf Bestellung 3834 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 1223+ | 0.058 EUR |
| 1292+ | 0.055 EUR |
| WM03P56M2 |
Hersteller: WAYON
WM03P56M2-CYG SMD P channel transistors
WM03P56M2-CYG SMD P channel transistors
auf Bestellung 2649 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 1263+ | 0.057 EUR |
| 1337+ | 0.053 EUR |
| WM03P91A |
Hersteller: WAYON
WM03P91A-CYG SMD P channel transistors
WM03P91A-CYG SMD P channel transistors
auf Bestellung 940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 110+ | 0.65 EUR |
| 544+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| WM04N50M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 400+ | 0.18 EUR |
| 940+ | 0.076 EUR |
| 1341+ | 0.053 EUR |
| 1484+ | 0.048 EUR |
| 3000+ | 0.038 EUR |
| WM04N50M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 400+ | 0.18 EUR |
| 940+ | 0.076 EUR |
| 1341+ | 0.053 EUR |
| 1484+ | 0.048 EUR |
| 3000+ | 0.038 EUR |
| 6000+ | 0.037 EUR |
| WM04P50M |
Hersteller: WAYON
WM04P50M-CYG SMD P channel transistors
WM04P50M-CYG SMD P channel transistors
auf Bestellung 2800 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM04P56M2 |
Hersteller: WAYON
WM04P56M2-CYG SMD P channel transistors
WM04P56M2-CYG SMD P channel transistors
auf Bestellung 2265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 168+ | 0.43 EUR |
| 1185+ | 0.06 EUR |
| 1254+ | 0.057 EUR |
| 12000+ | 0.056 EUR |
| WM05DP01D |
Hersteller: WAYON
WM05DP01D-CYG Multi channel transistors
WM05DP01D-CYG Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM05N02G |
Hersteller: WAYON
WM05N02G-CYG SMD N channel transistors
WM05N02G-CYG SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2500+ | 0.029 EUR |
| 12000+ | 0.025 EUR |
| WM05N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 363+ | 0.2 EUR |
| 1087+ | 0.066 EUR |
| 2605+ | 0.027 EUR |
| 2874+ | 0.025 EUR |
| 3000+ | 0.024 EUR |
| WM05N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 363+ | 0.2 EUR |
| 1087+ | 0.066 EUR |
| 2605+ | 0.027 EUR |
| 2874+ | 0.025 EUR |
| 3000+ | 0.024 EUR |
| 6000+ | 0.019 EUR |
| WM05N03G |
Hersteller: WAYON
WM05N03G-CYG SMD N channel transistors
WM05N03G-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 2526+ | 0.028 EUR |
| 2674+ | 0.027 EUR |
| 12000+ | 0.026 EUR |
| WM05N03M |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 428+ | 0.17 EUR |
| 940+ | 0.076 EUR |
| 2165+ | 0.033 EUR |
| WM05N03M |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2165 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 428+ | 0.17 EUR |
| 940+ | 0.076 EUR |
| 2165+ | 0.033 EUR |
| WM05P01G |
Hersteller: WAYON
WM05P01G-CYG SMD P channel transistors
WM05P01G-CYG SMD P channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 662+ | 0.11 EUR |
| 1819+ | 0.039 EUR |
| 12000+ | 0.024 EUR |
| WM05P01M |
Hersteller: WAYON
WM05P01M-CYG SMD P channel transistors
WM05P01M-CYG SMD P channel transistors
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.52 EUR |
| 2400+ | 0.03 EUR |
| 12000+ | 0.02 EUR |
| WM05P02F |
![]() |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM05P02G |
Hersteller: WAYON
WM05P02G-CYG SMD P channel transistors
WM05P02G-CYG SMD P channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2703+ | 0.026 EUR |
| 2858+ | 0.025 EUR |
| WM05P20M |
Hersteller: WAYON
WM05P20M-CYG SMD P channel transistors
WM05P20M-CYG SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM06DN03DE |
Hersteller: WAYON
WM06DN03DE-CYG Multi channel transistors
WM06DN03DE-CYG Multi channel transistors
auf Bestellung 2754 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 133+ | 0.54 EUR |
| 1880+ | 0.038 EUR |
| 1985+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM06N03FB |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03FE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03GE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 397+ | 0.18 EUR |
| 881+ | 0.081 EUR |
| 2093+ | 0.034 EUR |
| 2315+ | 0.031 EUR |
| 2924+ | 0.024 EUR |
| WM06N03GE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 397+ | 0.18 EUR |
| 881+ | 0.081 EUR |
| 2093+ | 0.034 EUR |
| 2315+ | 0.031 EUR |
| 2924+ | 0.024 EUR |
| WM06N03HE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| WM06N03LE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 368+ | 0.19 EUR |
| 812+ | 0.088 EUR |
| 1938+ | 0.037 EUR |
| 2146+ | 0.033 EUR |
| 2703+ | 0.026 EUR |
| 2874+ | 0.025 EUR |
| WM06N03LE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 368+ | 0.19 EUR |
| 812+ | 0.088 EUR |
| 1938+ | 0.037 EUR |
| 2146+ | 0.033 EUR |
| 2703+ | 0.026 EUR |
| 2874+ | 0.025 EUR |
| WM06N03ME |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2397 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 424+ | 0.17 EUR |
| 1276+ | 0.056 EUR |
| 2397+ | 0.03 EUR |
| WM06N03ME |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2397 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 424+ | 0.17 EUR |
| 1276+ | 0.056 EUR |
| 2397+ | 0.03 EUR |
| 2732+ | 0.026 EUR |
| WM06N30M |
Hersteller: WAYON
WM06N30M-CYG SMD N channel transistors
WM06N30M-CYG SMD N channel transistors
auf Bestellung 962 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.53 EUR |
| 962+ | 0.074 EUR |
| 1229+ | 0.059 EUR |
| 12000+ | 0.035 EUR |
| WM06N30MS |
Hersteller: WAYON
WM06N30MS-CYG SMD N channel transistors
WM06N30MS-CYG SMD N channel transistors
auf Bestellung 2147 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 1725+ | 0.041 EUR |
| 1819+ | 0.039 EUR |
| WM06P17MR |
Hersteller: WAYON
WM06P17MR-CYG SMD P channel transistors
WM06P17MR-CYG SMD P channel transistors
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 426+ | 0.17 EUR |
| 1172+ | 0.061 EUR |
| 12000+ | 0.037 EUR |
| WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 394+ | 0.18 EUR |
| 863+ | 0.083 EUR |
| 2058+ | 0.035 EUR |
| 2294+ | 0.031 EUR |
| 2513+ | 0.028 EUR |
| 2660+ | 0.027 EUR |
| WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2944 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 394+ | 0.18 EUR |
| 863+ | 0.083 EUR |
| 2058+ | 0.035 EUR |
| 2294+ | 0.031 EUR |
| 2513+ | 0.028 EUR |
| 2660+ | 0.027 EUR |
| WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 379+ | 0.19 EUR |
| 1137+ | 0.063 EUR |
| 2703+ | 0.026 EUR |
| 2995+ | 0.024 EUR |
| WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 379+ | 0.19 EUR |
| 1137+ | 0.063 EUR |
| 2703+ | 0.026 EUR |
| 2995+ | 0.024 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2427 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 447+ | 0.16 EUR |
| 1042+ | 0.069 EUR |
| 1493+ | 0.048 EUR |
| 2119+ | 0.034 EUR |
| 2233+ | 0.032 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2427 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 447+ | 0.16 EUR |
| 1042+ | 0.069 EUR |
| 1493+ | 0.048 EUR |
| 2119+ | 0.034 EUR |
| 2233+ | 0.032 EUR |
| 12000+ | 0.031 EUR |
| WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2888 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 491+ | 0.15 EUR |
| 1180+ | 0.061 EUR |
| 1316+ | 0.054 EUR |
| 1656+ | 0.043 EUR |
| 1755+ | 0.041 EUR |
| WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2888 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 491+ | 0.15 EUR |
| 1180+ | 0.061 EUR |
| 1316+ | 0.054 EUR |
| 1656+ | 0.043 EUR |
| 1755+ | 0.041 EUR |
| 6000+ | 0.04 EUR |
| WM10N35M2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2916 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 345+ | 0.21 EUR |
| 574+ | 0.12 EUR |
| 638+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 854+ | 0.084 EUR |
| WM10N35M2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2916 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 345+ | 0.21 EUR |
| 574+ | 0.12 EUR |
| 638+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 854+ | 0.084 EUR |
| 6000+ | 0.083 EUR |
| WM10N35M3 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 311+ | 0.23 EUR |
| 521+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 782+ | 0.092 EUR |
| WM10N35M3 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2978 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 311+ | 0.23 EUR |
| 521+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 782+ | 0.092 EUR |
| 12000+ | 0.089 EUR |



