Produkte > WAYON > Alle Produkte des Herstellers WAYON (843) > Seite 6 nach 15

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
T835H-800L WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 80A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TE P0050150.00j5 WAYON 265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm;   Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
64+0.69 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WM01P41M WM01P41M WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.1A; Idm: 15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.1A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
443+0.16 EUR
1034+0.069 EUR
1484+0.048 EUR
1651+0.043 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN080C WM02DN080C WAYON WM02DN080C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Drain current: 8A
Pulsed drain current: 49A
Gate charge: 11nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN085C WM02DN085C WAYON WM02DN085C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Drain current: 8.5A
Pulsed drain current: 56A
Gate charge: 22.1nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
500+0.19 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN08D WM02DN08D WAYON WM02DN08D.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 0.8A
Pulsed drain current: 3A
Gate charge: 1.1nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1589+0.044 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN08T WM02DN08T WAYON WM02DN08T.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 0.8A
Pulsed drain current: 3A
Gate charge: 1.1nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
527+0.14 EUR
875+0.082 EUR
973+0.074 EUR
1107+0.065 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN095C WM02DN095C WAYON WM02DN095C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Drain current: 9.5A
Pulsed drain current: 60A
Gate charge: 22nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
207+0.35 EUR
248+0.29 EUR
262+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN110C WM02DN110C WAYON WM02DN110C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Drain current: 11A
Pulsed drain current: 70A
Gate charge: 23nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
231+0.31 EUR
281+0.25 EUR
317+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN48A WM02DN48A WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Drain current: 4.8A
Pulsed drain current: 30A
Gate charge: 10nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2973 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
939+0.076 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN50M3 WM02DN50M3 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Drain current: 5A
Pulsed drain current: 20A
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1673+0.043 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN560Q WM02DN560Q WAYON WM02DN560Q.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Drain current: 56A
Pulsed drain current: 100A
Gate charge: 27.8nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
142+0.51 EUR
158+0.45 EUR
178+0.4 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN60M3 WM02DN60M3 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Drain current: 6A
Pulsed drain current: 25A
Gate charge: 12nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
944+0.076 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN70A WM02DN70A WAYON WM02DN70A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 8.8nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
334+0.21 EUR
417+0.17 EUR
443+0.16 EUR
506+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN70M3 WM02DN70M3 WAYON WM02DN70M3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 9.6nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
388+0.18 EUR
642+0.11 EUR
716+0.1 EUR
808+0.089 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WM02DP06T WM02DP06T WAYON WM02DP06T.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
527+0.14 EUR
881+0.081 EUR
981+0.073 EUR
1114+0.064 EUR
3000+0.058 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02N08FB WAYON WM02N08FB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM02N20F WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM02N20G WM02N20G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
516+0.14 EUR
1202+0.059 EUR
1725+0.041 EUR
1924+0.037 EUR
3000+0.029 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02N31M WM02N31M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
569+0.13 EUR
1316+0.054 EUR
1887+0.038 EUR
2101+0.034 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM02P160R WM02P160R WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
341+0.21 EUR
424+0.17 EUR
451+0.16 EUR
511+0.14 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02P60M2 WM02P60M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2796 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
439+0.16 EUR
736+0.097 EUR
820+0.087 EUR
926+0.077 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM04P56M2 WM04P56M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02F WAYON WM05P02F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FB WAYON WM06N03FB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FE WAYON WM06N03FE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03GE WM06N03GE WAYON WM06N03GE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
417+0.17 EUR
920+0.078 EUR
2193+0.033 EUR
2428+0.029 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03HE WM06N03HE WAYON WM06N03He.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03LE WM06N03LE WAYON WM06N03LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
388+0.18 EUR
845+0.085 EUR
2025+0.035 EUR
2243+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03ME WM06N03ME WAYON WM06N03ME.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM10N35M3 WM10N35M3 WAYON WM10N35M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2938 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
343+0.21 EUR
569+0.13 EUR
633+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM4C62160A WM4C62160A WAYON WM4C62160A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Drain current: 8A
Gate charge: 13nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
262+0.27 EUR
319+0.22 EUR
360+0.2 EUR
500+0.18 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB009N03LG4 WMB009N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.49 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
WMB010N04LG4 WMB010N04LG4 WAYON WMB010N04LG4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
75+0.96 EUR
84+0.85 EUR
100+0.79 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N04LG4 WMB014N04LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06HG4 WMB014N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06LG4 WMB014N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
70+1.03 EUR
79+0.92 EUR
100+0.85 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMB017N03LG2 WMB017N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMB020N03LG4 WMB020N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29.5nC
Pulsed drain current: 500A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMB023N03LG2 WMB023N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
120+0.6 EUR
133+0.54 EUR
151+0.47 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06HG4 WMB025N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
71+1.01 EUR
80+0.9 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06LG4 WMB025N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMB027N08HG4 WMB027N08HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06HG4 WMB034N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
68+1.06 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06LG4 WMB034N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMB037N10HGS WMB037N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB040N03LG2 WMB040N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
209+0.34 EUR
232+0.31 EUR
262+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMB040N08HGS WMB040N08HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMB050N03LG4 WMB050N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
242+0.3 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMB060N08LG2 WMB060N08LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
74+0.97 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMB080N10HG2 WMB080N10HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMB080N10LG2 WMB080N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.4 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
WMB090N04LG2 WMB090N04LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 33A
Power dissipation: 32.9W
Pulsed drain current: 200A
Gate charge: 6.5nC
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
203+0.35 EUR
211+0.34 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMB093N15HG4 WMB093N15HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB100N04TS WMB100N04TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
98+0.73 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMB108N03T1 WMB108N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
209+0.34 EUR
232+0.31 EUR
262+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMB119N10LG2 WMB119N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Case: PDFN5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 75W
Drain current: 50A
Gate-source voltage: ±20V
Pulsed drain current: 148A
Drain-source voltage: 100V
Kind of package: reel; tape
Type of transistor: N-MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
100+0.72 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
T835H-800L
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 80A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TE P0050150.00j5
Hersteller: WAYON
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm;   Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
64+0.69 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WM01P41M
WM01P41M
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.1A; Idm: 15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.1A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
443+0.16 EUR
1034+0.069 EUR
1484+0.048 EUR
1651+0.043 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN080C WM02DN080C.pdf
WM02DN080C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Drain current: 8A
Pulsed drain current: 49A
Gate charge: 11nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN085C WM02DN085C.pdf
WM02DN085C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Drain current: 8.5A
Pulsed drain current: 56A
Gate charge: 22.1nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
500+0.19 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN08D WM02DN08D.pdf
WM02DN08D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 0.8A
Pulsed drain current: 3A
Gate charge: 1.1nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1589+0.044 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN08T WM02DN08T.pdf
WM02DN08T
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 0.8A
Pulsed drain current: 3A
Gate charge: 1.1nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
527+0.14 EUR
875+0.082 EUR
973+0.074 EUR
1107+0.065 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN095C WM02DN095C.pdf
WM02DN095C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Drain current: 9.5A
Pulsed drain current: 60A
Gate charge: 22nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
207+0.35 EUR
248+0.29 EUR
262+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN110C WM02DN110C.pdf
WM02DN110C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Drain current: 11A
Pulsed drain current: 70A
Gate charge: 23nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
231+0.31 EUR
281+0.25 EUR
317+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN48A
WM02DN48A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Drain current: 4.8A
Pulsed drain current: 30A
Gate charge: 10nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
939+0.076 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN50M3
WM02DN50M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Drain current: 5A
Pulsed drain current: 20A
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1673+0.043 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN560Q WM02DN560Q.pdf
WM02DN560Q
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Drain current: 56A
Pulsed drain current: 100A
Gate charge: 27.8nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
142+0.51 EUR
158+0.45 EUR
178+0.4 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN60M3
WM02DN60M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Drain current: 6A
Pulsed drain current: 25A
Gate charge: 12nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
944+0.076 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN70A WM02DN70A.pdf
WM02DN70A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 8.8nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
334+0.21 EUR
417+0.17 EUR
443+0.16 EUR
506+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN70M3 WM02DN70M3.pdf
WM02DN70M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 9.6nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
388+0.18 EUR
642+0.11 EUR
716+0.1 EUR
808+0.089 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WM02DP06T WM02DP06T.pdf
WM02DP06T
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
527+0.14 EUR
881+0.081 EUR
981+0.073 EUR
1114+0.064 EUR
3000+0.058 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02N08FB WM02N08FB.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM02N20F
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM02N20G
WM02N20G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
516+0.14 EUR
1202+0.059 EUR
1725+0.041 EUR
1924+0.037 EUR
3000+0.029 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02N31M
WM02N31M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
569+0.13 EUR
1316+0.054 EUR
1887+0.038 EUR
2101+0.034 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM02P160R
WM02P160R
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
341+0.21 EUR
424+0.17 EUR
451+0.16 EUR
511+0.14 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02P60M2
WM02P60M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
439+0.16 EUR
736+0.097 EUR
820+0.087 EUR
926+0.077 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM04P56M2
WM04P56M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02F WM05P02F.pdf
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FB WM06N03FB.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FE WM06N03FE.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03GE WM06N03GE.pdf
WM06N03GE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
417+0.17 EUR
920+0.078 EUR
2193+0.033 EUR
2428+0.029 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03HE WM06N03He.pdf
WM06N03HE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03LE WM06N03LE.pdf
WM06N03LE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
388+0.18 EUR
845+0.085 EUR
2025+0.035 EUR
2243+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03ME WM06N03ME.pdf
WM06N03ME
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM10N35M3 WM10N35M3.pdf
WM10N35M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2938 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
343+0.21 EUR
569+0.13 EUR
633+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM4C62160A WM4C62160A.pdf
WM4C62160A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Drain current: 8A
Gate charge: 13nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
262+0.27 EUR
319+0.22 EUR
360+0.2 EUR
500+0.18 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB009N03LG4
WMB009N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.49 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
WMB010N04LG4 WMB010N04LG4.pdf
WMB010N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
75+0.96 EUR
84+0.85 EUR
100+0.79 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N04LG4
WMB014N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06HG4
WMB014N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06LG4
WMB014N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
70+1.03 EUR
79+0.92 EUR
100+0.85 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMB017N03LG2
WMB017N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMB020N03LG4
WMB020N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29.5nC
Pulsed drain current: 500A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMB023N03LG2
WMB023N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
120+0.6 EUR
133+0.54 EUR
151+0.47 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06HG4
WMB025N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
71+1.01 EUR
80+0.9 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06LG4
WMB025N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMB027N08HG4
WMB027N08HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06HG4
WMB034N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
68+1.06 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06LG4
WMB034N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMB037N10HGS
WMB037N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB040N03LG2
WMB040N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
209+0.34 EUR
232+0.31 EUR
262+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMB040N08HGS
WMB040N08HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMB050N03LG4
WMB050N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
242+0.3 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMB060N08LG2
WMB060N08LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 98A
Pulsed drain current: 310A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
74+0.97 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMB080N10HG2
WMB080N10HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 296A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 296A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
92+0.78 EUR
97+0.74 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMB080N10LG2
WMB080N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46.8A; Idm: 296A; 84W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46.8A
Pulsed drain current: 296A
Power dissipation: 84W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 30.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.4 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
WMB090N04LG2
WMB090N04LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; Idm: 200A; 32.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 33A
Power dissipation: 32.9W
Pulsed drain current: 200A
Gate charge: 6.5nC
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
203+0.35 EUR
211+0.34 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMB093N15HG4
WMB093N15HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95A; Idm: 380A; 178.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 178.5W
Case: PDFN5060-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 37.2nC
On-state resistance: 9.3mΩ
Drain current: 95A
Pulsed drain current: 380A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB100N04TS
WMB100N04TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 500A; 96W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
98+0.73 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMB108N03T1
WMB108N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 108A; Idm: 432A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 108A
Pulsed drain current: 432A
Power dissipation: 69W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
209+0.34 EUR
232+0.31 EUR
262+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMB119N10LG2
WMB119N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 148A; 75W
Case: PDFN5060-8
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 75W
Drain current: 50A
Gate-source voltage: ±20V
Pulsed drain current: 148A
Drain-source voltage: 100V
Kind of package: reel; tape
Type of transistor: N-MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
100+0.72 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  [ Nächste Seite >> ]