| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| WM03N06M | WAYON | WM03N06M-CYG SMD N channel transistors |
auf Bestellung 1772 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N115A | WAYON | WM03N115A-CYG SMD N channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N32M | WAYON | WM03N32M-CYG SMD N channel transistors |
auf Bestellung 2364 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N57M | WAYON | WM03N57M-CYG SMD N channel transistors |
auf Bestellung 2958 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N58M | WAYON | WM03N58M-CYG SMD N channel transistors |
auf Bestellung 2344 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N58M2 | WAYON | WM03N58M2-CYG SMD N channel transistors |
auf Bestellung 2435 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N86M2 | WAYON | WM03N86M2-CYG SMD N channel transistors |
auf Bestellung 1755 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P115R | WAYON | WM03P115R-CYG SMD P channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P27M | WAYON | WM03P27M-CYG SMD P channel transistors |
auf Bestellung 3140 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P41M | WAYON | WM03P41M-CYG SMD P channel transistors |
auf Bestellung 630 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P42M | WAYON | WM03P42M-CYG SMD P channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P42M2 | WAYON | WM03P42M2-CYG SMD P channel transistors |
auf Bestellung 2794 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P51A | WAYON | WM03P51A-CYG SMD P channel transistors |
auf Bestellung 3834 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P56M2 | WAYON | WM03P56M2-CYG SMD P channel transistors |
auf Bestellung 2549 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P91A | WAYON | WM03P91A-CYG SMD P channel transistors |
auf Bestellung 930 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM04N50M | WAYON | WM04N50M-CYG SMD N channel transistors |
auf Bestellung 4109 Stücke: Lieferzeit 7-14 Tag (e) |
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WM04P56M2 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.6A Pulsed drain current: -22.4A Power dissipation: 2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WM05DP01D | WAYON | WM05DP01D-CYG Multi channel transistors |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N02G | WAYON | WM05N02G-CYG SMD N channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N02M | WAYON | WM05N02M-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N03G | WAYON | WM05N03G-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N03M | WAYON | WM05N03M-CYG SMD N channel transistors |
auf Bestellung 2164 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P01G | WAYON | WM05P01G-CYG SMD P channel transistors |
auf Bestellung 3002 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P01M | WAYON | WM05P01M-CYG SMD P channel transistors |
auf Bestellung 2300 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P02G | WAYON | WM05P02G-CYG SMD P channel transistors |
auf Bestellung 2986 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06DN03DE | WAYON | WM06DN03DE-CYG Multi channel transistors |
auf Bestellung 2739 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N03GE | WAYON | WM06N03GE-CYG SMD N channel transistors |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N03LE | WAYON | WM06N03LE-CYG SMD N channel transistors |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N03ME | WAYON | WM06N03ME-CYG SMD N channel transistors |
auf Bestellung 2397 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30M | WAYON | WM06N30M-CYG SMD N channel transistors |
auf Bestellung 2975 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30MS | WAYON | WM06N30MS-CYG SMD N channel transistors |
auf Bestellung 1912 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.5A |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2944 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.8A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.3nC Pulsed drain current: 8A |
auf Bestellung 2322 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.3nC Pulsed drain current: 8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2322 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4nC Pulsed drain current: 13.2A |
auf Bestellung 2708 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4nC Pulsed drain current: 13.2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2708 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N35M2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 1.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A |
auf Bestellung 2681 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N35M2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 1.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2681 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A |
auf Bestellung 2966 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2966 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM10P20M2 | WAYON | WM10P20M2-CYG SMD P channel transistors |
auf Bestellung 2443 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM12N35M2 | WAYON | WM12N35M2-CYG SMD N channel transistors |
auf Bestellung 2952 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM15P10M2 | WAYON | WM15P10M2-CYG SMD P channel transistors |
auf Bestellung 2875 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM4C62160A | WAYON | WM4C62160A-CYG Multi channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM6C61042A | WAYON | WM6C61042A-CYG Multi channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMAA4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMB007N03LG4 | WAYON | WMB007N03LG4-CYG SMD N channel transistors |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB009N03LG4 | WAYON | WMB009N03LG4-CYG SMD N channel transistors |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB010N04LG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 118nC On-state resistance: 1mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 114W Drain current: 268A Pulsed drain current: 1072A |
auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB010N04LG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: PDFN5060-8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 118nC On-state resistance: 1mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 114W Drain current: 268A Pulsed drain current: 1072A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 299 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB014N04LG4 | WAYON | WMB014N04LG4-CYG SMD N channel transistors |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB014N06LG4 | WAYON | WMB014N06LG4-CYG SMD N channel transistors |
auf Bestellung 142 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB017N03LG2 | WAYON | WMB017N03LG2-CYG SMD N channel transistors |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB020N03LG4 | WAYON | WMB020N03LG4-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N06M |
Hersteller: WAYON
WM03N06M-CYG SMD N channel transistors
WM03N06M-CYG SMD N channel transistors
auf Bestellung 1772 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 137+ | 0.52 EUR |
| 1772+ | 0.04 EUR |
| 2204+ | 0.033 EUR |
| 12000+ | 0.02 EUR |
| WM03N115A |
Hersteller: WAYON
WM03N115A-CYG SMD N channel transistors
WM03N115A-CYG SMD N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 0.69 EUR |
| 521+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| WM03N32M |
Hersteller: WAYON
WM03N32M-CYG SMD N channel transistors
WM03N32M-CYG SMD N channel transistors
auf Bestellung 2364 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 158+ | 0.45 EUR |
| 2359+ | 0.03 EUR |
| 12000+ | 0.029 EUR |
| WM03N57M |
Hersteller: WAYON
WM03N57M-CYG SMD N channel transistors
WM03N57M-CYG SMD N channel transistors
auf Bestellung 2958 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 1471+ | 0.049 EUR |
| 1553+ | 0.046 EUR |
| WM03N58M |
Hersteller: WAYON
WM03N58M-CYG SMD N channel transistors
WM03N58M-CYG SMD N channel transistors
auf Bestellung 2344 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 128+ | 0.56 EUR |
| 1825+ | 0.039 EUR |
| 1931+ | 0.037 EUR |
| WM03N58M2 |
Hersteller: WAYON
WM03N58M2-CYG SMD N channel transistors
WM03N58M2-CYG SMD N channel transistors
auf Bestellung 2435 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 1737+ | 0.041 EUR |
| 1839+ | 0.039 EUR |
| WM03N86M2 |
Hersteller: WAYON
WM03N86M2-CYG SMD N channel transistors
WM03N86M2-CYG SMD N channel transistors
auf Bestellung 1755 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 175+ | 0.41 EUR |
| 1250+ | 0.057 EUR |
| 1323+ | 0.054 EUR |
| WM03P115R |
Hersteller: WAYON
WM03P115R-CYG SMD P channel transistors
WM03P115R-CYG SMD P channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 110+ | 0.65 EUR |
| 550+ | 0.13 EUR |
| 582+ | 0.12 EUR |
| WM03P27M |
Hersteller: WAYON
WM03P27M-CYG SMD P channel transistors
WM03P27M-CYG SMD P channel transistors
auf Bestellung 3140 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 2440+ | 0.029 EUR |
| 2578+ | 0.028 EUR |
| WM03P41M |
Hersteller: WAYON
WM03P41M-CYG SMD P channel transistors
WM03P41M-CYG SMD P channel transistors
auf Bestellung 630 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 142+ | 0.5 EUR |
| 630+ | 0.11 EUR |
| 1299+ | 0.054 EUR |
| 12000+ | 0.033 EUR |
| WM03P42M |
Hersteller: WAYON
WM03P42M-CYG SMD P channel transistors
WM03P42M-CYG SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 2033+ | 0.035 EUR |
| 2146+ | 0.033 EUR |
| WM03P42M2 |
Hersteller: WAYON
WM03P42M2-CYG SMD P channel transistors
WM03P42M2-CYG SMD P channel transistors
auf Bestellung 2794 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 128+ | 0.56 EUR |
| 1825+ | 0.039 EUR |
| 1931+ | 0.037 EUR |
| WM03P51A |
Hersteller: WAYON
WM03P51A-CYG SMD P channel transistors
WM03P51A-CYG SMD P channel transistors
auf Bestellung 3834 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 171+ | 0.42 EUR |
| 1220+ | 0.059 EUR |
| 1292+ | 0.055 EUR |
| WM03P56M2 |
Hersteller: WAYON
WM03P56M2-CYG SMD P channel transistors
WM03P56M2-CYG SMD P channel transistors
auf Bestellung 2549 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 171+ | 0.42 EUR |
| 1217+ | 0.059 EUR |
| 1289+ | 0.055 EUR |
| WM03P91A |
Hersteller: WAYON
WM03P91A-CYG SMD P channel transistors
WM03P91A-CYG SMD P channel transistors
auf Bestellung 930 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 521+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| WM04N50M |
Hersteller: WAYON
WM04N50M-CYG SMD N channel transistors
WM04N50M-CYG SMD N channel transistors
auf Bestellung 4109 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 1701+ | 0.042 EUR |
| 1799+ | 0.04 EUR |
| 12000+ | 0.039 EUR |
| WM04P56M2 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WM05DP01D |
Hersteller: WAYON
WM05DP01D-CYG Multi channel transistors
WM05DP01D-CYG Multi channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 1737+ | 0.041 EUR |
| 1839+ | 0.039 EUR |
| WM05N02G |
Hersteller: WAYON
WM05N02G-CYG SMD N channel transistors
WM05N02G-CYG SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 146+ | 0.49 EUR |
| 2500+ | 0.029 EUR |
| 12000+ | 0.026 EUR |
| WM05N02M |
Hersteller: WAYON
WM05N02M-CYG SMD N channel transistors
WM05N02M-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 137+ | 0.52 EUR |
| 3000+ | 0.024 EUR |
| 12000+ | 0.02 EUR |
| WM05N03G |
Hersteller: WAYON
WM05N03G-CYG SMD N channel transistors
WM05N03G-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 2440+ | 0.029 EUR |
| 2578+ | 0.028 EUR |
| WM05N03M |
Hersteller: WAYON
WM05N03M-CYG SMD N channel transistors
WM05N03M-CYG SMD N channel transistors
auf Bestellung 2164 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 147+ | 0.49 EUR |
| 2164+ | 0.033 EUR |
| 12000+ | 0.022 EUR |
| WM05P01G |
Hersteller: WAYON
WM05P01G-CYG SMD P channel transistors
WM05P01G-CYG SMD P channel transistors
auf Bestellung 3002 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 131+ | 0.55 EUR |
| 2794+ | 0.026 EUR |
| 2959+ | 0.024 EUR |
| WM05P01M |
Hersteller: WAYON
WM05P01M-CYG SMD P channel transistors
WM05P01M-CYG SMD P channel transistors
auf Bestellung 2300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 137+ | 0.52 EUR |
| 2300+ | 0.031 EUR |
| 12000+ | 0.02 EUR |
| WM05P02G |
Hersteller: WAYON
WM05P02G-CYG SMD P channel transistors
WM05P02G-CYG SMD P channel transistors
auf Bestellung 2986 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 146+ | 0.49 EUR |
| 2605+ | 0.027 EUR |
| 2748+ | 0.026 EUR |
| WM06DN03DE |
Hersteller: WAYON
WM06DN03DE-CYG Multi channel transistors
WM06DN03DE-CYG Multi channel transistors
auf Bestellung 2739 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 127+ | 0.56 EUR |
| 1812+ | 0.039 EUR |
| 1916+ | 0.037 EUR |
| WM06N03GE |
Hersteller: WAYON
WM06N03GE-CYG SMD N channel transistors
WM06N03GE-CYG SMD N channel transistors
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 2809+ | 0.025 EUR |
| 2940+ | 0.024 EUR |
| WM06N03LE |
Hersteller: WAYON
WM06N03LE-CYG SMD N channel transistors
WM06N03LE-CYG SMD N channel transistors
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 146+ | 0.49 EUR |
| 2605+ | 0.027 EUR |
| 2748+ | 0.026 EUR |
| WM06N03ME |
Hersteller: WAYON
WM06N03ME-CYG SMD N channel transistors
WM06N03ME-CYG SMD N channel transistors
auf Bestellung 2397 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 2397+ | 0.03 EUR |
| 2611+ | 0.027 EUR |
| 12000+ | 0.017 EUR |
| WM06N30M |
Hersteller: WAYON
WM06N30M-CYG SMD N channel transistors
WM06N30M-CYG SMD N channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 133+ | 0.54 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM06N30MS |
Hersteller: WAYON
WM06N30MS-CYG SMD N channel transistors
WM06N30MS-CYG SMD N channel transistors
auf Bestellung 1912 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 155+ | 0.46 EUR |
| 1656+ | 0.043 EUR |
| 1749+ | 0.041 EUR |
| WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 432+ | 0.17 EUR |
| 940+ | 0.076 EUR |
| 2243+ | 0.032 EUR |
| 2500+ | 0.029 EUR |
| WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2944 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 432+ | 0.17 EUR |
| 940+ | 0.076 EUR |
| 2243+ | 0.032 EUR |
| 2500+ | 0.029 EUR |
| 3000+ | 0.026 EUR |
| WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 414+ | 0.17 EUR |
| 1238+ | 0.058 EUR |
| 2942+ | 0.024 EUR |
| WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 414+ | 0.17 EUR |
| 1238+ | 0.058 EUR |
| 2942+ | 0.024 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
auf Bestellung 2322 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 472+ | 0.15 EUR |
| 1107+ | 0.065 EUR |
| 1598+ | 0.045 EUR |
| 1767+ | 0.04 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2322 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 472+ | 0.15 EUR |
| 1107+ | 0.065 EUR |
| 1598+ | 0.045 EUR |
| 1767+ | 0.04 EUR |
| 3000+ | 0.032 EUR |
| 6000+ | 0.031 EUR |
| WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
auf Bestellung 2708 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 516+ | 0.14 EUR |
| 1238+ | 0.058 EUR |
| 1378+ | 0.052 EUR |
| 1568+ | 0.046 EUR |
| WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2708 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 516+ | 0.14 EUR |
| 1238+ | 0.058 EUR |
| 1378+ | 0.052 EUR |
| 1568+ | 0.046 EUR |
| 3000+ | 0.041 EUR |
| 6000+ | 0.04 EUR |
| WM10N35M2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
auf Bestellung 2681 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 363+ | 0.2 EUR |
| 601+ | 0.12 EUR |
| 673+ | 0.11 EUR |
| 754+ | 0.095 EUR |
| WM10N35M2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2681 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 363+ | 0.2 EUR |
| 601+ | 0.12 EUR |
| 673+ | 0.11 EUR |
| 754+ | 0.095 EUR |
| 3000+ | 0.085 EUR |
| 6000+ | 0.082 EUR |
| WM10N35M3 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
auf Bestellung 2966 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 348+ | 0.21 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| WM10N35M3 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2966 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 348+ | 0.21 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 3000+ | 0.089 EUR |
| 6000+ | 0.086 EUR |
| WM10P20M2 |
Hersteller: WAYON
WM10P20M2-CYG SMD P channel transistors
WM10P20M2-CYG SMD P channel transistors
auf Bestellung 2443 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 102+ | 0.7 EUR |
| 582+ | 0.12 EUR |
| WM12N35M2 |
Hersteller: WAYON
WM12N35M2-CYG SMD N channel transistors
WM12N35M2-CYG SMD N channel transistors
auf Bestellung 2952 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 104+ | 0.69 EUR |
| 736+ | 0.097 EUR |
| 782+ | 0.092 EUR |
| WM15P10M2 |
Hersteller: WAYON
WM15P10M2-CYG SMD P channel transistors
WM15P10M2-CYG SMD P channel transistors
auf Bestellung 2875 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 353+ | 0.2 EUR |
| 374+ | 0.19 EUR |
| WM4C62160A |
Hersteller: WAYON
WM4C62160A-CYG Multi channel transistors
WM4C62160A-CYG Multi channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 374+ | 0.19 EUR |
| 394+ | 0.18 EUR |
| WM6C61042A |
Hersteller: WAYON
WM6C61042A-CYG Multi channel transistors
WM6C61042A-CYG Multi channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| WMAA4N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA6N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB007N03LG4 |
Hersteller: WAYON
WMB007N03LG4-CYG SMD N channel transistors
WMB007N03LG4-CYG SMD N channel transistors
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 65+ | 1.1 EUR |
| 12000+ | 0.96 EUR |
| WMB009N03LG4 |
Hersteller: WAYON
WMB009N03LG4-CYG SMD N channel transistors
WMB009N03LG4-CYG SMD N channel transistors
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.49 EUR |
| 52+ | 1.37 EUR |
| 12000+ | 0.82 EUR |
| WMB010N04LG4 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 74+ | 0.98 EUR |
| 83+ | 0.87 EUR |
| 100+ | 0.8 EUR |
| WMB010N04LG4 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 299 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 74+ | 0.98 EUR |
| 83+ | 0.87 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.78 EUR |
| 3000+ | 0.75 EUR |
| WMB014N04LG4 |
Hersteller: WAYON
WMB014N04LG4-CYG SMD N channel transistors
WMB014N04LG4-CYG SMD N channel transistors
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 61+ | 1.17 EUR |
| 12000+ | 0.7 EUR |
| WMB014N06LG4 |
Hersteller: WAYON
WMB014N06LG4-CYG SMD N channel transistors
WMB014N06LG4-CYG SMD N channel transistors
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 81+ | 0.89 EUR |
| 86+ | 0.84 EUR |
| 12000+ | 0.82 EUR |
| WMB017N03LG2 |
Hersteller: WAYON
WMB017N03LG2-CYG SMD N channel transistors
WMB017N03LG2-CYG SMD N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 26+ | 2.75 EUR |
| 70+ | 1.02 EUR |
| 12000+ | 0.6 EUR |
| WMB020N03LG4 |
Hersteller: WAYON
WMB020N03LG4-CYG SMD N channel transistors
WMB020N03LG4-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 100+ | 0.72 EUR |
| 104+ | 0.69 EUR |
| 12000+ | 0.41 EUR |





