| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WM06N03LE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N03ME | WAYON | WM06N03ME-CYG SMD N channel transistors |
auf Bestellung 2397 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30M | WAYON | WM06N30M-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30MS | WAYON | WM06N30MS-CYG SMD N channel transistors |
auf Bestellung 1912 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06P17MR | WAYON | WM06P17MR-CYG SMD P channel transistors |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.5A |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2944 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.8A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.2A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.3nC Pulsed drain current: 8A |
auf Bestellung 2322 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.3nC Pulsed drain current: 8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2322 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4nC Pulsed drain current: 13.2A |
auf Bestellung 2708 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4nC Pulsed drain current: 13.2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2708 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N35M2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 1.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A |
auf Bestellung 2681 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N35M2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 1.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2681 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A |
auf Bestellung 2966 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2966 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM10P20M2 | WAYON | WM10P20M2-CYG SMD P channel transistors |
auf Bestellung 2743 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM12N35M2 | WAYON | WM12N35M2-CYG SMD N channel transistors |
auf Bestellung 2952 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM15P10M2 | WAYON | WM15P10M2-CYG SMD P channel transistors |
auf Bestellung 2975 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM4C62160A | WAYON | WM4C62160A-CYG Multi channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM6C61042A | WAYON | WM6C61042A-CYG Multi channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMAA4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMB007N03LG4 | WAYON | WMB007N03LG4-CYG SMD N channel transistors |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB009N03LG4 | WAYON | WMB009N03LG4-CYG SMD N channel transistors |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB010N04LG4 | WAYON | WMB010N04LG4-CYG SMD N channel transistors |
auf Bestellung 313 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB014N04LG4 | WAYON | WMB014N04LG4-CYG SMD N channel transistors |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB014N06LG4 | WAYON | WMB014N06LG4-CYG SMD N channel transistors |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB017N03LG2 | WAYON | WMB017N03LG2-CYG SMD N channel transistors |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB020N03LG4 | WAYON | WMB020N03LG4-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB020N06HG4 | WAYON | WMB020N06HG4-CYG SMD N channel transistors |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB023N03LG2 | WAYON | WMB023N03LG2-CYG SMD N channel transistors |
auf Bestellung 198 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB025N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB025N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 96 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB025N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB025N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 140A Pulsed drain current: 560A Power dissipation: 92.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB027N08HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 195A Pulsed drain current: 780A Power dissipation: 192.3W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 77.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMB02DN10T1 | WAYON | WMB02DN10T1-CYG Multi channel transistors |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB034N06HG4 | WAYON | WMB034N06HG4-CYG SMD N channel transistors |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB034N06LG4 | WAYON | WMB034N06LG4-CYG SMD N channel transistors |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB03DN06T1 | WAYON | WMB03DN06T1-CYG Multi channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB040N03LG2 | WAYON | WMB040N03LG2-CYG SMD N channel transistors |
auf Bestellung 478 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB040N08HGS | WAYON | WMB040N08HGS-CYG SMD N channel transistors |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB042DN03LG2 | WAYON | WMB042DN03LG2-CYG Multi channel transistors |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB043N10HGS | WAYON | WMB043N10HGS-CYG SMD N channel transistors |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB043N10LGS | WAYON | WMB043N10LGS-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB048NV6HG4 | WAYON | WMB048NV6HG4-CYG SMD N channel transistors |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB048NV6LG4 | WAYON | WMB048NV6LG4-CYG SMD N channel transistors |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB049N12HG2 | WAYON | WMB049N12HG2-CYG SMD N channel transistors |
auf Bestellung 62 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 65A Pulsed drain current: 260A Power dissipation: 31.25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 242 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB060N08LG2 | WAYON | WMB060N08LG2-CYG SMD N channel transistors |
auf Bestellung 87 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB060N10HGS | WAYON | WMB060N10HGS-CYG SMD N channel transistors |
auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB060N10LGS | WAYON | WMB060N10LGS-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB072N12HG2 | WAYON | WMB072N12HG2-CYG SMD N channel transistors |
auf Bestellung 54 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB072N12LG2-S | WAYON | WMB072N12LG2-S-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.5A Pulsed drain current: 168A Power dissipation: 30.4W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| WM06N03LE |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 400+ | 0.18 EUR |
| 881+ | 0.081 EUR |
| 2101+ | 0.034 EUR |
| 2337+ | 0.031 EUR |
| 3000+ | 0.024 EUR |
| WM06N03ME |
Hersteller: WAYON
WM06N03ME-CYG SMD N channel transistors
WM06N03ME-CYG SMD N channel transistors
auf Bestellung 2397 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 147+ | 0.49 EUR |
| 2397+ | 0.03 EUR |
| 2726+ | 0.026 EUR |
| 12000+ | 0.016 EUR |
| WM06N30M |
Hersteller: WAYON
WM06N30M-CYG SMD N channel transistors
WM06N30M-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 1954+ | 0.037 EUR |
| 2067+ | 0.035 EUR |
| WM06N30MS |
Hersteller: WAYON
WM06N30MS-CYG SMD N channel transistors
WM06N30MS-CYG SMD N channel transistors
auf Bestellung 1912 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 159+ | 0.45 EUR |
| 1707+ | 0.042 EUR |
| 1806+ | 0.04 EUR |
| WM06P17MR |
Hersteller: WAYON
WM06P17MR-CYG SMD P channel transistors
WM06P17MR-CYG SMD P channel transistors
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 159+ | 0.45 EUR |
| 1684+ | 0.042 EUR |
| 1780+ | 0.04 EUR |
| 12000+ | 0.039 EUR |
| WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 432+ | 0.17 EUR |
| 940+ | 0.076 EUR |
| 2243+ | 0.032 EUR |
| 2500+ | 0.029 EUR |
| WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2944 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 432+ | 0.17 EUR |
| 940+ | 0.076 EUR |
| 2243+ | 0.032 EUR |
| 2500+ | 0.029 EUR |
| 3000+ | 0.026 EUR |
| WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 414+ | 0.17 EUR |
| 1238+ | 0.058 EUR |
| 2942+ | 0.024 EUR |
| WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 414+ | 0.17 EUR |
| 1238+ | 0.058 EUR |
| 2942+ | 0.024 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
auf Bestellung 2322 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 472+ | 0.15 EUR |
| 1107+ | 0.065 EUR |
| 1598+ | 0.045 EUR |
| 1767+ | 0.04 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2322 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 472+ | 0.15 EUR |
| 1107+ | 0.065 EUR |
| 1598+ | 0.045 EUR |
| 1767+ | 0.04 EUR |
| 3000+ | 0.032 EUR |
| 6000+ | 0.031 EUR |
| WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
auf Bestellung 2708 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 516+ | 0.14 EUR |
| 1238+ | 0.058 EUR |
| 1378+ | 0.052 EUR |
| 1568+ | 0.046 EUR |
| WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2708 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 516+ | 0.14 EUR |
| 1238+ | 0.058 EUR |
| 1378+ | 0.052 EUR |
| 1568+ | 0.046 EUR |
| 3000+ | 0.041 EUR |
| 6000+ | 0.04 EUR |
| WM10N35M2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
auf Bestellung 2681 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 363+ | 0.2 EUR |
| 601+ | 0.12 EUR |
| 673+ | 0.11 EUR |
| 754+ | 0.095 EUR |
| WM10N35M2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2681 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 363+ | 0.2 EUR |
| 601+ | 0.12 EUR |
| 673+ | 0.11 EUR |
| 754+ | 0.095 EUR |
| 3000+ | 0.085 EUR |
| 6000+ | 0.082 EUR |
| WM10N35M3 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
auf Bestellung 2966 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 348+ | 0.21 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| WM10N35M3 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2966 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 348+ | 0.21 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 3000+ | 0.089 EUR |
| 6000+ | 0.086 EUR |
| WM10P20M2 |
Hersteller: WAYON
WM10P20M2-CYG SMD P channel transistors
WM10P20M2-CYG SMD P channel transistors
auf Bestellung 2743 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 603+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| WM12N35M2 |
Hersteller: WAYON
WM12N35M2-CYG SMD N channel transistors
WM12N35M2-CYG SMD N channel transistors
auf Bestellung 2952 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 758+ | 0.094 EUR |
| 794+ | 0.09 EUR |
| WM15P10M2 |
Hersteller: WAYON
WM15P10M2-CYG SMD P channel transistors
WM15P10M2-CYG SMD P channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 92+ | 0.78 EUR |
| 363+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| WM4C62160A |
Hersteller: WAYON
WM4C62160A-CYG Multi channel transistors
WM4C62160A-CYG Multi channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 385+ | 0.19 EUR |
| 407+ | 0.18 EUR |
| 12000+ | 0.17 EUR |
| WM6C61042A |
Hersteller: WAYON
WM6C61042A-CYG Multi channel transistors
WM6C61042A-CYG Multi channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 115+ | 0.62 EUR |
| 288+ | 0.25 EUR |
| 305+ | 0.23 EUR |
| WMAA4N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA6N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB007N03LG4 |
Hersteller: WAYON
WMB007N03LG4-CYG SMD N channel transistors
WMB007N03LG4-CYG SMD N channel transistors
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 72+ | 1 EUR |
| 75+ | 0.96 EUR |
| 12000+ | 0.93 EUR |
| WMB009N03LG4 |
Hersteller: WAYON
WMB009N03LG4-CYG SMD N channel transistors
WMB009N03LG4-CYG SMD N channel transistors
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.49 EUR |
| 54+ | 1.33 EUR |
| 12000+ | 0.8 EUR |
| WMB010N04LG4 |
Hersteller: WAYON
WMB010N04LG4-CYG SMD N channel transistors
WMB010N04LG4-CYG SMD N channel transistors
auf Bestellung 313 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.15 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 12000+ | 0.75 EUR |
| WMB014N04LG4 |
Hersteller: WAYON
WMB014N04LG4-CYG SMD N channel transistors
WMB014N04LG4-CYG SMD N channel transistors
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 64+ | 1.12 EUR |
| 12000+ | 0.68 EUR |
| WMB014N06LG4 |
Hersteller: WAYON
WMB014N06LG4-CYG SMD N channel transistors
WMB014N06LG4-CYG SMD N channel transistors
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 83+ | 0.86 EUR |
| 88+ | 0.82 EUR |
| 12000+ | 0.8 EUR |
| WMB017N03LG2 |
Hersteller: WAYON
WMB017N03LG2-CYG SMD N channel transistors
WMB017N03LG2-CYG SMD N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 26+ | 2.75 EUR |
| 70+ | 1.02 EUR |
| 12000+ | 0.61 EUR |
| WMB020N03LG4 |
Hersteller: WAYON
WMB020N03LG4-CYG SMD N channel transistors
WMB020N03LG4-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 100+ | 0.72 EUR |
| 107+ | 0.67 EUR |
| 12000+ | 0.4 EUR |
| WMB020N06HG4 |
Hersteller: WAYON
WMB020N06HG4-CYG SMD N channel transistors
WMB020N06HG4-CYG SMD N channel transistors
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.31 EUR |
| 58+ | 1.23 EUR |
| 12000+ | 0.85 EUR |
| WMB023N03LG2 |
Hersteller: WAYON
WMB023N03LG2-CYG SMD N channel transistors
WMB023N03LG2-CYG SMD N channel transistors
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 160+ | 0.45 EUR |
| 169+ | 0.42 EUR |
| WMB025N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| 82+ | 0.88 EUR |
| WMB025N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| 82+ | 0.88 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.79 EUR |
| 3000+ | 0.76 EUR |
| WMB025N06LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| 82+ | 0.88 EUR |
| WMB025N06LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| 82+ | 0.88 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.79 EUR |
| 3000+ | 0.76 EUR |
| WMB027N08HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB02DN10T1 |
Hersteller: WAYON
WMB02DN10T1-CYG Multi channel transistors
WMB02DN10T1-CYG Multi channel transistors
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 89+ | 0.81 EUR |
| 317+ | 0.23 EUR |
| 334+ | 0.21 EUR |
| WMB034N06HG4 |
Hersteller: WAYON
WMB034N06HG4-CYG SMD N channel transistors
WMB034N06HG4-CYG SMD N channel transistors
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 95+ | 0.76 EUR |
| 98+ | 0.73 EUR |
| 12000+ | 0.7 EUR |
| WMB034N06LG4 |
Hersteller: WAYON
WMB034N06LG4-CYG SMD N channel transistors
WMB034N06LG4-CYG SMD N channel transistors
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.65 EUR |
| 62+ | 1.16 EUR |
| 12000+ | 0.7 EUR |
| WMB03DN06T1 |
Hersteller: WAYON
WMB03DN06T1-CYG Multi channel transistors
WMB03DN06T1-CYG Multi channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 89+ | 0.81 EUR |
| 317+ | 0.23 EUR |
| 334+ | 0.21 EUR |
| WMB040N03LG2 |
Hersteller: WAYON
WMB040N03LG2-CYG SMD N channel transistors
WMB040N03LG2-CYG SMD N channel transistors
auf Bestellung 478 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 278+ | 0.26 EUR |
| 295+ | 0.24 EUR |
| WMB040N08HGS |
Hersteller: WAYON
WMB040N08HGS-CYG SMD N channel transistors
WMB040N08HGS-CYG SMD N channel transistors
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| 47+ | 1.52 EUR |
| 12000+ | 0.93 EUR |
| WMB042DN03LG2 |
Hersteller: WAYON
WMB042DN03LG2-CYG Multi channel transistors
WMB042DN03LG2-CYG Multi channel transistors
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 99+ | 0.73 EUR |
| 12000+ | 0.64 EUR |
| WMB043N10HGS |
Hersteller: WAYON
WMB043N10HGS-CYG SMD N channel transistors
WMB043N10HGS-CYG SMD N channel transistors
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 81+ | 0.89 EUR |
| 85+ | 0.84 EUR |
| 12000+ | 0.82 EUR |
| WMB043N10LGS |
Hersteller: WAYON
WMB043N10LGS-CYG SMD N channel transistors
WMB043N10LGS-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 81+ | 0.89 EUR |
| 86+ | 0.84 EUR |
| 12000+ | 0.82 EUR |
| WMB048NV6HG4 |
Hersteller: WAYON
WMB048NV6HG4-CYG SMD N channel transistors
WMB048NV6HG4-CYG SMD N channel transistors
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 86+ | 0.83 EUR |
| 102+ | 0.7 EUR |
| 12000+ | 0.43 EUR |
| WMB048NV6LG4 |
Hersteller: WAYON
WMB048NV6LG4-CYG SMD N channel transistors
WMB048NV6LG4-CYG SMD N channel transistors
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |
| 41+ | 1.74 EUR |
| 112+ | 0.64 EUR |
| 12000+ | 0.39 EUR |
| WMB049N12HG2 |
Hersteller: WAYON
WMB049N12HG2-CYG SMD N channel transistors
WMB049N12HG2-CYG SMD N channel transistors
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 48+ | 1.52 EUR |
| 50+ | 1.43 EUR |
| 12000+ | 1.4 EUR |
| WMB050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 242+ | 0.3 EUR |
| WMB050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 242 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 242+ | 0.3 EUR |
| 500+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
| WMB060N08LG2 |
Hersteller: WAYON
WMB060N08LG2-CYG SMD N channel transistors
WMB060N08LG2-CYG SMD N channel transistors
auf Bestellung 87 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 87+ | 0.82 EUR |
| 12000+ | 0.61 EUR |
| WMB060N10HGS |
Hersteller: WAYON
WMB060N10HGS-CYG SMD N channel transistors
WMB060N10HGS-CYG SMD N channel transistors
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.21 EUR |
| 94+ | 0.77 EUR |
| 97+ | 0.74 EUR |
| 12000+ | 0.71 EUR |
| WMB060N10LGS |
Hersteller: WAYON
WMB060N10LGS-CYG SMD N channel transistors
WMB060N10LGS-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 94+ | 0.77 EUR |
| 99+ | 0.73 EUR |
| 12000+ | 0.71 EUR |
| WMB072N12HG2 |
Hersteller: WAYON
WMB072N12HG2-CYG SMD N channel transistors
WMB072N12HG2-CYG SMD N channel transistors
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 54+ | 1.33 EUR |
| 12000+ | 1.07 EUR |
| WMB072N12LG2-S |
Hersteller: WAYON
WMB072N12LG2-S-CYG SMD N channel transistors
WMB072N12LG2-S-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 76+ | 0.94 EUR |
| 80+ | 0.9 EUR |
| 12000+ | 0.87 EUR |
| WMB080N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; Idm: 168A; 30.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Pulsed drain current: 168A
Power dissipation: 30.4W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 278+ | 0.26 EUR |
| 332+ | 0.22 EUR |
| 353+ | 0.2 EUR |
| 500+ | 0.18 EUR |





