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T2535H-800AY WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T3035H-800A WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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T4050H-800EA WAYON Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube
Mounting: THT
Max. forward impulse current: 0.4kA
Gate current: 50mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 40A
Kind of package: tube
Case: TO3PF
Type of thyristor: standard
Produkt ist nicht verfügbar
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T435H-800AM T435H-800AM WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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T435H-800L T435H-800L WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 40A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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TE P0050150.00j5 WAYON 265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm;   Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
64+0.8 EUR
Mindestbestellmenge: 64 Stücke
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WM02DH08D WM02DH08D WAYON WM02DH08D.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4527 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.51 EUR
496+0.17 EUR
1180+0.073 EUR
1313+0.064 EUR
1480+0.057 EUR
3000+0.051 EUR
Mindestbestellmenge: 167 Stücke
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WM02DN080C WM02DN080C WAYON WM02DN080C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8A
Pulsed drain current: 49A
On-state resistance: 15.5mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.86 EUR
248+0.35 EUR
298+0.29 EUR
315+0.27 EUR
Mindestbestellmenge: 100 Stücke
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WM02DN085C WM02DN085C WAYON WM02DN085C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8.5A
Pulsed drain current: 56A
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.86 EUR
248+0.35 EUR
298+0.29 EUR
315+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 100 Stücke
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WM02DN08D WM02DN08D WAYON WM02DN08D.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
544+0.15 EUR
1303+0.065 EUR
1446+0.058 EUR
1589+0.052 EUR
Mindestbestellmenge: 179 Stücke
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WM02DN08T WM02DN08T WAYON WM02DN08T.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
511+0.17 EUR
851+0.1 EUR
949+0.089 EUR
1078+0.079 EUR
Mindestbestellmenge: 179 Stücke
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WM02DN095C WM02DN095C WAYON WM02DN095C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.5A
Power dissipation: 1.56W
Case: DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Pulsed drain current: 60A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.86 EUR
208+0.4 EUR
249+0.35 EUR
264+0.32 EUR
500+0.29 EUR
Mindestbestellmenge: 100 Stücke
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WM02DN110C WM02DN110C WAYON WM02DN110C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 11A
Pulsed drain current: 70A
On-state resistance: 7.5mΩ
Gate charge: 23nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.67 EUR
225+0.38 EUR
274+0.31 EUR
309+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 129 Stücke
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WM02DN48A WM02DN48A WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 30A
Power dissipation: 1.25W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2973 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.55 EUR
447+0.19 EUR
745+0.11 EUR
828+0.1 EUR
939+0.09 EUR
2000+0.089 EUR
Mindestbestellmenge: 157 Stücke
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WM02DN50M3 WM02DN50M3 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 5A
Pulsed drain current: 20A
On-state resistance: 27mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
544+0.15 EUR
1303+0.065 EUR
1446+0.058 EUR
1629+0.052 EUR
Mindestbestellmenge: 179 Stücke
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WM02DN560Q WM02DN560Q WAYON WM02DN560Q.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 56A
Pulsed drain current: 100A
Power dissipation: 31W
Case: DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
82+1.04 EUR
139+0.62 EUR
154+0.55 EUR
174+0.49 EUR
Mindestbestellmenge: 82 Stücke
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WM02DN60M3 WM02DN60M3 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
439+0.19 EUR
736+0.12 EUR
820+0.1 EUR
926+0.092 EUR
Mindestbestellmenge: 152 Stücke
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WM02DN70A WM02DN70A WAYON WM02DN70A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.73 EUR
325+0.26 EUR
410+0.2 EUR
500+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 117 Stücke
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WM02DN70M3 WM02DN70M3 WAYON WM02DN70M3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 17mΩ
Gate charge: 9.6nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.64 EUR
376+0.23 EUR
622+0.13 EUR
699+0.12 EUR
788+0.11 EUR
Mindestbestellmenge: 132 Stücke
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WM02DP06T WM02DP06T WAYON WM02DP06T.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
511+0.17 EUR
857+0.1 EUR
955+0.089 EUR
1083+0.079 EUR
3000+0.07 EUR
Mindestbestellmenge: 179 Stücke
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WM02N20G WM02N20G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.49 EUR
516+0.17 EUR
1202+0.07 EUR
1396+0.061 EUR
Mindestbestellmenge: 173 Stücke
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WM02P160R WM02P160R WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.7 EUR
341+0.25 EUR
424+0.2 EUR
451+0.19 EUR
511+0.17 EUR
Mindestbestellmenge: 122 Stücke
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WM02P60M2 WM02P60M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
196+0.44 EUR
Mindestbestellmenge: 152 Stücke
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WM03N115A WM03N115A WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.71 EUR
329+0.26 EUR
410+0.2 EUR
500+0.18 EUR
Mindestbestellmenge: 120 Stücke
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WM03N57M WM03N57M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2958 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.71 EUR
334+0.25 EUR
787+0.11 EUR
1124+0.076 EUR
1244+0.068 EUR
Mindestbestellmenge: 120 Stücke
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WM03N58M WM03N58M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
417+0.2 EUR
977+0.087 EUR
1397+0.061 EUR
1548+0.055 EUR
Mindestbestellmenge: 148 Stücke
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WM03N58M2 WM03N58M2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
556+0.15 EUR
1330+0.064 EUR
1480+0.057 EUR
1667+0.051 EUR
Mindestbestellmenge: 186 Stücke
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WM04N50M WM04N50M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 10nC
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.63 EUR
388+0.21 EUR
906+0.094 EUR
1292+0.065 EUR
1433+0.06 EUR
Mindestbestellmenge: 136 Stücke
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WM04P56M2 WM04P56M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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WM05N02G WM05N02G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
379+0.23 EUR
834+0.1 EUR
1985+0.043 EUR
2203+0.038 EUR
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WM05N02M WM05N02M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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157+0.55 EUR
365+0.24 EUR
1097+0.077 EUR
2618+0.032 EUR
2891+0.03 EUR
3000+0.029 EUR
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WM05N03G WM05N03G WAYON WM05N03G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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193+0.44 EUR
556+0.15 EUR
1289+0.065 EUR
1852+0.046 EUR
2067+0.042 EUR
3000+0.033 EUR
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WM05N03M WM05N03M WAYON WM05N03M.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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455+0.19 EUR
1000+0.086 EUR
2164+0.039 EUR
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WM05P20M WM05P20M WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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186+0.46 EUR
550+0.15 EUR
1316+0.064 EUR
1458+0.058 EUR
1645+0.051 EUR
3000+0.046 EUR
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WM06N03FB WAYON WM06N03FB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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WM06N03FE WAYON WM06N03FE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03GE WM06N03GE WAYON WM06N03GE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
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148+0.58 EUR
407+0.21 EUR
887+0.096 EUR
2128+0.04 EUR
2348+0.036 EUR
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WM06N03HE WM06N03HE WAYON WM06N03He.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03LE WM06N03LE WAYON WM06N03LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
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162+0.52 EUR
374+0.23 EUR
823+0.1 EUR
1969+0.043 EUR
2174+0.039 EUR
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WM06N03ME WM06N03ME WAYON WM06N03ME.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM10N02G WM10N02G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.5A
Gate charge: 1.5nC
auf Bestellung 2944 Stücke:
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186+0.46 EUR
417+0.2 EUR
920+0.093 EUR
2193+0.039 EUR
2440+0.035 EUR
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WM10N02M WM10N02M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Gate charge: 1.5nC
auf Bestellung 572 Stücke:
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404+0.21 EUR
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WM10N20M WM10N20M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 5.3nC
auf Bestellung 1922 Stücke:
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162+0.52 EUR
463+0.18 EUR
1087+0.079 EUR
1558+0.055 EUR
1725+0.049 EUR
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WM10N33M WM10N33M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 13.2A
Gate charge: 4nC
auf Bestellung 2646 Stücke:
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167+0.51 EUR
506+0.17 EUR
1202+0.07 EUR
1348+0.063 EUR
1530+0.056 EUR
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WM10N35M2 WM10N35M2 WAYON WM10N35M2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 14A
Gate charge: 21nC
auf Bestellung 1396 Stücke:
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125+0.68 EUR
353+0.24 EUR
587+0.14 EUR
658+0.13 EUR
736+0.12 EUR
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WM10N35M3 WM10N35M3 WAYON WM10N35M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 14A
Gate charge: 21nC
auf Bestellung 2938 Stücke:
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120+0.71 EUR
336+0.25 EUR
562+0.15 EUR
625+0.13 EUR
705+0.12 EUR
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WM4C62160A WM4C62160A WAYON WM4C62160A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1.7W
Case: CSP1515-4
Gate-source voltage: ±12V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
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136+0.63 EUR
265+0.32 EUR
321+0.26 EUR
363+0.24 EUR
500+0.21 EUR
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WMAA4N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 14.5nC
Technology: WMOS™ D1
Produkt ist nicht verfügbar
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WMAA4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA6N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB007N03LG4 WMB007N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 220A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 220A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 54 Stücke:
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54+1.58 EUR
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WMB009N03LG4 WMB009N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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3+28.37 EUR
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WMB010N04LG4 WMB010N04LG4 WAYON WMB010N04LG4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 268A
Pulsed drain current: 1072A
Power dissipation: 114W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
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75+1.14 EUR
84+1.01 EUR
100+0.94 EUR
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WMB014N04LG4 WMB014N04LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 1.4mΩ
Mounting: SMD
Pulsed drain current: 660A
Power dissipation: 62.5W
Gate charge: 116nC
Polarisation: unipolar
auf Bestellung 55 Stücke:
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WMB014N06HG4 WMB014N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB014N06LG4 WMB014N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB017N03LG2 WMB017N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 30.5W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 63.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 2.5mΩ
auf Bestellung 3 Stücke:
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3+28.37 EUR
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WMB020N03LG4 WMB020N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 500A
Gate charge: 29.5nC
auf Bestellung 100 Stücke:
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82+1.04 EUR
100+0.86 EUR
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WMB020N06HG4 WMB020N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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47+1.81 EUR
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T2535H-800AY
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T3035H-800A
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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T4050H-800EA
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube
Mounting: THT
Max. forward impulse current: 0.4kA
Gate current: 50mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 40A
Kind of package: tube
Case: TO3PF
Type of thyristor: standard
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T435H-800AM
T435H-800AM
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T435H-800L
T435H-800L
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 40A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TE P0050150.00j5
Hersteller: WAYON
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm;   Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
64+0.8 EUR
Mindestbestellmenge: 64 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM02DH08D WM02DH08D.pdf
WM02DH08D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4527 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
496+0.17 EUR
1180+0.073 EUR
1313+0.064 EUR
1480+0.057 EUR
3000+0.051 EUR
Mindestbestellmenge: 167 Stücke
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WM02DN080C WM02DN080C.pdf
WM02DN080C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8A
Pulsed drain current: 49A
On-state resistance: 15.5mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
248+0.35 EUR
298+0.29 EUR
315+0.27 EUR
Mindestbestellmenge: 100 Stücke
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WM02DN085C WM02DN085C.pdf
WM02DN085C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8.5A
Pulsed drain current: 56A
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
248+0.35 EUR
298+0.29 EUR
315+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 100 Stücke
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WM02DN08D WM02DN08D.pdf
WM02DN08D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
544+0.15 EUR
1303+0.065 EUR
1446+0.058 EUR
1589+0.052 EUR
Mindestbestellmenge: 179 Stücke
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WM02DN08T WM02DN08T.pdf
WM02DN08T
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
511+0.17 EUR
851+0.1 EUR
949+0.089 EUR
1078+0.079 EUR
Mindestbestellmenge: 179 Stücke
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WM02DN095C WM02DN095C.pdf
WM02DN095C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.5A
Power dissipation: 1.56W
Case: DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Pulsed drain current: 60A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+0.86 EUR
208+0.4 EUR
249+0.35 EUR
264+0.32 EUR
500+0.29 EUR
Mindestbestellmenge: 100 Stücke
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WM02DN110C WM02DN110C.pdf
WM02DN110C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 11A
Pulsed drain current: 70A
On-state resistance: 7.5mΩ
Gate charge: 23nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
129+0.67 EUR
225+0.38 EUR
274+0.31 EUR
309+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 129 Stücke
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WM02DN48A
WM02DN48A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 30A
Power dissipation: 1.25W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2973 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
157+0.55 EUR
447+0.19 EUR
745+0.11 EUR
828+0.1 EUR
939+0.09 EUR
2000+0.089 EUR
Mindestbestellmenge: 157 Stücke
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WM02DN50M3
WM02DN50M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 5A
Pulsed drain current: 20A
On-state resistance: 27mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
544+0.15 EUR
1303+0.065 EUR
1446+0.058 EUR
1629+0.052 EUR
Mindestbestellmenge: 179 Stücke
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WM02DN560Q WM02DN560Q.pdf
WM02DN560Q
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 56A
Pulsed drain current: 100A
Power dissipation: 31W
Case: DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 27.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
82+1.04 EUR
139+0.62 EUR
154+0.55 EUR
174+0.49 EUR
Mindestbestellmenge: 82 Stücke
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WM02DN60M3
WM02DN60M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
439+0.19 EUR
736+0.12 EUR
820+0.1 EUR
926+0.092 EUR
Mindestbestellmenge: 152 Stücke
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WM02DN70A WM02DN70A.pdf
WM02DN70A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
117+0.73 EUR
325+0.26 EUR
410+0.2 EUR
500+0.18 EUR
2000+0.15 EUR
Mindestbestellmenge: 117 Stücke
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WM02DN70M3 WM02DN70M3.pdf
WM02DN70M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 17mΩ
Gate charge: 9.6nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
376+0.23 EUR
622+0.13 EUR
699+0.12 EUR
788+0.11 EUR
Mindestbestellmenge: 132 Stücke
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WM02DP06T WM02DP06T.pdf
WM02DP06T
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
511+0.17 EUR
857+0.1 EUR
955+0.089 EUR
1083+0.079 EUR
3000+0.07 EUR
Mindestbestellmenge: 179 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM02N20G
WM02N20G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
173+0.49 EUR
516+0.17 EUR
1202+0.07 EUR
1396+0.061 EUR
Mindestbestellmenge: 173 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM02P160R
WM02P160R
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
122+0.7 EUR
341+0.25 EUR
424+0.2 EUR
451+0.19 EUR
511+0.17 EUR
Mindestbestellmenge: 122 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM02P60M2
WM02P60M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
196+0.44 EUR
Mindestbestellmenge: 152 Stücke
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WM03N115A
WM03N115A
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
329+0.26 EUR
410+0.2 EUR
500+0.18 EUR
Mindestbestellmenge: 120 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM03N57M
WM03N57M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2958 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
334+0.25 EUR
787+0.11 EUR
1124+0.076 EUR
1244+0.068 EUR
Mindestbestellmenge: 120 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM03N58M
WM03N58M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
417+0.2 EUR
977+0.087 EUR
1397+0.061 EUR
1548+0.055 EUR
Mindestbestellmenge: 148 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM03N58M2
WM03N58M2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
556+0.15 EUR
1330+0.064 EUR
1480+0.057 EUR
1667+0.051 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM04N50M
WM04N50M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 10nC
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
136+0.63 EUR
388+0.21 EUR
906+0.094 EUR
1292+0.065 EUR
1433+0.06 EUR
Mindestbestellmenge: 136 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WM04P56M2
WM04P56M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM05N02G
WM05N02G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
379+0.23 EUR
834+0.1 EUR
1985+0.043 EUR
2203+0.038 EUR
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WM05N02M
WM05N02M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
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157+0.55 EUR
365+0.24 EUR
1097+0.077 EUR
2618+0.032 EUR
2891+0.03 EUR
3000+0.029 EUR
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WM05N03G WM05N03G.pdf
WM05N03G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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193+0.44 EUR
556+0.15 EUR
1289+0.065 EUR
1852+0.046 EUR
2067+0.042 EUR
3000+0.033 EUR
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WM05N03M WM05N03M.pdf
WM05N03M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2164 Stücke:
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167+0.51 EUR
455+0.19 EUR
1000+0.086 EUR
2164+0.039 EUR
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WM05P20M
WM05P20M
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
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186+0.46 EUR
550+0.15 EUR
1316+0.064 EUR
1458+0.058 EUR
1645+0.051 EUR
3000+0.046 EUR
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WM06N03FB WM06N03FB.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03FE WM06N03FE.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03GE WM06N03GE.pdf
WM06N03GE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
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AnzahlPrivatkunde
148+0.58 EUR
407+0.21 EUR
887+0.096 EUR
2128+0.04 EUR
2348+0.036 EUR
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WM06N03HE WM06N03He.pdf
WM06N03HE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03LE WM06N03LE.pdf
WM06N03LE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
374+0.23 EUR
823+0.1 EUR
1969+0.043 EUR
2174+0.039 EUR
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WM06N03ME WM06N03ME.pdf
WM06N03ME
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM10N02G
WM10N02G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.5A
Gate charge: 1.5nC
auf Bestellung 2944 Stücke:
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AnzahlPrivatkunde
186+0.46 EUR
417+0.2 EUR
920+0.093 EUR
2193+0.039 EUR
2440+0.035 EUR
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WM10N02M
WM10N02M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Gate charge: 1.5nC
auf Bestellung 572 Stücke:
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152+0.56 EUR
404+0.21 EUR
572+0.14 EUR
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WM10N20M
WM10N20M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 5.3nC
auf Bestellung 1922 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
463+0.18 EUR
1087+0.079 EUR
1558+0.055 EUR
1725+0.049 EUR
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WM10N33M
WM10N33M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 13.2A
Gate charge: 4nC
auf Bestellung 2646 Stücke:
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AnzahlPrivatkunde
167+0.51 EUR
506+0.17 EUR
1202+0.07 EUR
1348+0.063 EUR
1530+0.056 EUR
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WM10N35M2 WM10N35M2.pdf
WM10N35M2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 14A
Gate charge: 21nC
auf Bestellung 1396 Stücke:
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125+0.68 EUR
353+0.24 EUR
587+0.14 EUR
658+0.13 EUR
736+0.12 EUR
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WM10N35M3 WM10N35M3.pdf
WM10N35M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 14A
Gate charge: 21nC
auf Bestellung 2938 Stücke:
Lieferzeit 14-21 Tag (e)
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120+0.71 EUR
336+0.25 EUR
562+0.15 EUR
625+0.13 EUR
705+0.12 EUR
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WM4C62160A WM4C62160A.pdf
WM4C62160A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1.7W
Case: CSP1515-4
Gate-source voltage: ±12V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
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136+0.63 EUR
265+0.32 EUR
321+0.26 EUR
363+0.24 EUR
500+0.21 EUR
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WMAA4N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 14.5nC
Technology: WMOS™ D1
Produkt ist nicht verfügbar
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WMAA4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA6N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB007N03LG4
WMB007N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 220A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 220A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
54+1.58 EUR
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WMB009N03LG4
WMB009N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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3+28.37 EUR
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WMB010N04LG4 WMB010N04LG4.pdf
WMB010N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 268A
Pulsed drain current: 1072A
Power dissipation: 114W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
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71+1.21 EUR
75+1.14 EUR
84+1.01 EUR
100+0.94 EUR
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WMB014N04LG4
WMB014N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Drain current: 165A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 1.4mΩ
Mounting: SMD
Pulsed drain current: 660A
Power dissipation: 62.5W
Gate charge: 116nC
Polarisation: unipolar
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.55 EUR
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WMB014N06HG4
WMB014N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06LG4
WMB014N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB017N03LG2
WMB017N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 30.5W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 63.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 2.5mΩ
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
Mindestbestellmenge: 3 Stücke
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WMB020N03LG4
WMB020N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 500A
Gate charge: 29.5nC
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
82+1.04 EUR
100+0.86 EUR
Mindestbestellmenge: 82 Stücke
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WMB020N06HG4
WMB020N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+1.81 EUR
Mindestbestellmenge: 47 Stücke
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