| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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MPR593115F0M10 | WAYON |
 Category: SMD resistorsDescription: Resistor: metal strip; 100uΩ; sensing; SMD; 5931; 15W; ±1%; W: 7.7mm Type of resistor: metal strip Resistance: 0.1mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 5931 Power: 15W Tolerance: ±1% Operating temperature: -55...170°C Length: 15mm Width: 7.7mm Height: 0.5mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
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MPR593115F0M20 | WAYON |
Category: SMD resistors Description: Resistor: metal strip; 200uΩ; sensing; SMD; 5931; 15W; ±1%; W: 7.7mm Type of resistor: metal strip Resistance: 0.2mΩ Kind of resistor: sensing Mounting: SMD Case - inch: 5931 Power: 15W Tolerance: ±1% Operating temperature: -55...170°C Length: 15mm Width: 7.7mm Height: 0.5mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| T1235H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO220ABIns; THT Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35mA Case: TO220ABIns Mounting: THT Kind of package: tube Type of thyristor: standard Max. forward impulse current: 120A Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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T1235H-800L | WAYON |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO220FP; THT; tube Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35mA Case: TO220FP Mounting: THT Kind of package: tube Type of thyristor: standard Max. forward impulse current: 120A Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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T1235H-800NB | WAYON |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO263; SMD Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 35mA Case: TO263 Mounting: SMD Kind of package: reel; tape Type of thyristor: standard Max. forward impulse current: 120A Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| T1635H-800AL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220ABIns; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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T1635H-800KL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 160A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220-3 Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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T1635H-800NBL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO263; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO263 Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| T1635H-800NL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO262 Gate current: 35mA Max. forward impulse current: 160A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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T1650H-800LL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 160A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Gate current: 35mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 160A Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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T1650H-800NBL | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 16A; Igt: 50mA; TO263; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Gate current: 50mA Case: TO263 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 160A Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| T2035H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220ABIns; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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T2035H-800L | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 200A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220FP Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| T2035H-800N | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO262; THT; tube; Ifsm: 200A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO262 Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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T2035H-800NB | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO263; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO263 Gate current: 35mA Max. forward impulse current: 200A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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T2050H-800K | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A Kind of package: tube Mounting: THT Type of thyristor: thyristor Gate current: 50mA Max. load current: 20A Max. off-state voltage: 0.8kV Max. forward impulse current: 200A Case: TO220-3 Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| T2535H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 250A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| T2535H-800AY | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220-3 Gate current: 35mA Max. forward impulse current: 250A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| T3035H-800A | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube Mounting: THT Type of thyristor: thyristor Kind of package: tube Features of semiconductor devices: high temperature Gate current: 35mA Case: TO220ABIns Max. load current: 30A Max. forward impulse current: 0.3kA Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| T4050H-800EA | WAYON |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube Mounting: THT Max. forward impulse current: 0.4kA Gate current: 50mA Features of semiconductor devices: high temperature Max. off-state voltage: 0.8kV Max. load current: 40A Kind of package: tube Case: TO3PF Type of thyristor: standard |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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T435H-800AM | WAYON |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; Ifsm: 40A Case: TO252 Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Max. off-state voltage: 0.8kV Max. load current: 4A Kind of package: reel; tape Type of thyristor: standard Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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T435H-800L | WAYON |
Category: SMD/THT thyristors Description: Thyristor: standard; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube Case: TO220FP Mounting: THT Gate current: 35mA Features of semiconductor devices: high temperature Max. off-state voltage: 0.8kV Max. load current: 4A Kind of package: tube Type of thyristor: standard Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
| TE P0050150.00j5 | WAYON |
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5 Anzahl je Verpackung: 32 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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WM02DH08D | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 750/-660mA Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 380/520mΩ Mounting: SMD Gate charge: 1/2.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 4527 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN080C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape Drain current: 8A Pulsed drain current: 49A On-state resistance: 15.5mΩ Gate charge: 11nC Gate-source voltage: ±12V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 489 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN085C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel; tape Drain current: 8.5A Pulsed drain current: 56A On-state resistance: 10.9mΩ Gate charge: 22.1nC Gate-source voltage: ±12V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN08D | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: 0.8A Pulsed drain current: 3A On-state resistance: 0.25Ω Gate charge: 1.1nC Gate-source voltage: ±10V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement |
auf Bestellung 1589 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN08T | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Power dissipation: 0.27W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 3A Gate charge: 1.1nC |
auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN095C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.5A Power dissipation: 1.56W Case: DFN2030-6 Gate-source voltage: ±12V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain Version: ESD Pulsed drain current: 60A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN110C | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD Mounting: SMD Version: ESD Drain current: 11A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape Semiconductor structure: common drain Case: DFN2030-6 On-state resistance: 7.5mΩ Pulsed drain current: 70A Power dissipation: 1.56W Gate charge: 23nC Polarisation: unipolar |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN48A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.8A Pulsed drain current: 30A Power dissipation: 1.25W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2973 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN50M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Drain current: 5A Pulsed drain current: 20A On-state resistance: 27mΩ Gate charge: 11nC Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 2674 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN560Q | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD Mounting: SMD Pulsed drain current: 100A Power dissipation: 31W Gate charge: 27.8nC Polarisation: unipolar Version: ESD Drain current: 56A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape Semiconductor structure: common drain Case: DFN3030-8 On-state resistance: 5.4mΩ |
auf Bestellung 369 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN60M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 25A Power dissipation: 1.5W Case: SOT23-6 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 2876 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN70A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Drain current: 7A Pulsed drain current: 28A On-state resistance: 13.5mΩ Gate charge: 8.8nC Gate-source voltage: ±10V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DN70M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Drain current: 7A Pulsed drain current: 28A On-state resistance: 17mΩ Gate charge: 9.6nC Gate-source voltage: ±10V Drain-source voltage: 20V Version: ESD Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02DP06T | WAYON |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -660mA Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 0.52Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: -2.64A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02N20G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 55mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 8A |
auf Bestellung 1396 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02P160R | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -16A Pulsed drain current: -64A Power dissipation: 6.5W Case: DFN2020-6 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM02P60M2 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -18A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 23mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM03N115A | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM03N57M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2958 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM03N58M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 22A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 27mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2344 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM03N58M2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 22A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2405 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM03P42M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -25A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.2A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -25A |
auf Bestellung 2695 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM04N50M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 10nC |
auf Bestellung 2904 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WM04P56M2 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -5.6A Power dissipation: 2W Case: SOT23 On-state resistance: 50mΩ Mounting: SMD Gate charge: 17.5nC Kind of channel: enhancement Pulsed drain current: -22.4A Gate-source voltage: ±20V Kind of package: reel; tape |
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WM05N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Pulsed drain current: 0.88A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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WM05N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 1A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM05N03G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM05N03M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2164 Stücke: Lieferzeit 14-21 Tag (e) |
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| WM05P02F | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD Case: DFN1006-3 Power dissipation: 0.35W Gate charge: 2.1nC Polarisation: unipolar Version: ESD Drain current: -0.25A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.2Ω Mounting: SMD Pulsed drain current: -1A |
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WM05P02G | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW Case: SOT323 Power dissipation: 0.3W Gate charge: 1.5nC Polarisation: unipolar Version: ESD Drain current: -200mA Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3Ω Mounting: SMD Pulsed drain current: -0.8A |
auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
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WM05P02M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW Case: SOT23 Power dissipation: 0.38W Gate charge: 1.5nC Polarisation: unipolar Version: ESD Drain current: -200mA Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3Ω Mounting: SMD Pulsed drain current: -0.8A |
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WM05P20M | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| WM06N03FB | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.36W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
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Im Einkaufswagen Stück im Wert von UAH | |||
| WM06N03FE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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WM06N03GE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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WM06N03HE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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WM06N03LE | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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| MPR593115F0M10 |
|
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 100uΩ; sensing; SMD; 5931; 15W; ±1%; W: 7.7mm
Type of resistor: metal strip
Resistance: 0.1mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 15W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 15mm
Width: 7.7mm
Height: 0.5mm
Category: SMD resistors
Description: Resistor: metal strip; 100uΩ; sensing; SMD; 5931; 15W; ±1%; W: 7.7mm
Type of resistor: metal strip
Resistance: 0.1mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 15W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 15mm
Width: 7.7mm
Height: 0.5mm
Produkt ist nicht verfügbar
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| MPR593115F0M20 |
|
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; 200uΩ; sensing; SMD; 5931; 15W; ±1%; W: 7.7mm
Type of resistor: metal strip
Resistance: 0.2mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 15W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 15mm
Width: 7.7mm
Height: 0.5mm
Category: SMD resistors
Description: Resistor: metal strip; 200uΩ; sensing; SMD; 5931; 15W; ±1%; W: 7.7mm
Type of resistor: metal strip
Resistance: 0.2mΩ
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Power: 15W
Tolerance: ±1%
Operating temperature: -55...170°C
Length: 15mm
Width: 7.7mm
Height: 0.5mm
Produkt ist nicht verfügbar
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| T1235H-800A |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO220ABIns; THT
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO220ABIns
Mounting: THT
Kind of package: tube
Type of thyristor: standard
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO220ABIns; THT
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO220ABIns
Mounting: THT
Kind of package: tube
Type of thyristor: standard
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
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| T1235H-800L |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO220FP; THT; tube
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: standard
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO220FP; THT; tube
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: standard
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
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| T1235H-800NB |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO263; SMD
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: standard
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 12A; Igt: 35mA; TO263; SMD
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 35mA
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: standard
Max. forward impulse current: 120A
Features of semiconductor devices: high temperature
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| T1635H-800AL |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| T1635H-800KL |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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| T1635H-800NBL |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| T1635H-800NL |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| T1650H-800LL |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 35mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
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| T1650H-800NBL |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 50mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 50mA
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 50mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Gate current: 50mA
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 160A
Features of semiconductor devices: high temperature
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| T2035H-800A |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| T2035H-800L |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| T2035H-800N |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO262; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO262; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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| T2035H-800NB |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 35mA; TO263; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO263
Gate current: 35mA
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
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| T2050H-800K |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 20A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 200A
Case: TO220-3
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A
Kind of package: tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 20A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 200A
Case: TO220-3
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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| T2535H-800A |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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| T2535H-800AY |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T3035H-800A |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T4050H-800EA |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube
Mounting: THT
Max. forward impulse current: 0.4kA
Gate current: 50mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 40A
Kind of package: tube
Case: TO3PF
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube
Mounting: THT
Max. forward impulse current: 0.4kA
Gate current: 50mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 40A
Kind of package: tube
Case: TO3PF
Type of thyristor: standard
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T435H-800AM |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; Ifsm: 40A
Case: TO252
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: reel; tape
Type of thyristor: standard
Max. forward impulse current: 40A
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; Ifsm: 40A
Case: TO252
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: reel; tape
Type of thyristor: standard
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T435H-800L |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Type of thyristor: standard
Max. forward impulse current: 40A
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Type of thyristor: standard
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TE P0050150.00j5 |
Hersteller: WAYON
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 64+ | 0.82 EUR |
| WM02DH08D |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4527 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN080C |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8A
Pulsed drain current: 49A
On-state resistance: 15.5mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8A
Pulsed drain current: 49A
On-state resistance: 15.5mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN085C |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8.5A
Pulsed drain current: 56A
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 8.5A
Pulsed drain current: 56A
On-state resistance: 10.9mΩ
Gate charge: 22.1nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN08D |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.8A
Pulsed drain current: 3A
On-state resistance: 0.25Ω
Gate charge: 1.1nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN08T |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Power dissipation: 0.27W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 3A
Gate charge: 1.1nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Power dissipation: 0.27W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 3A
Gate charge: 1.1nC
auf Bestellung 2465 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN095C |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.5A
Power dissipation: 1.56W
Case: DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Pulsed drain current: 60A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.5A
Power dissipation: 1.56W
Case: DFN2030-6
Gate-source voltage: ±12V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Pulsed drain current: 60A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN110C |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Mounting: SMD
Version: ESD
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common drain
Case: DFN2030-6
On-state resistance: 7.5mΩ
Pulsed drain current: 70A
Power dissipation: 1.56W
Gate charge: 23nC
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Mounting: SMD
Version: ESD
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common drain
Case: DFN2030-6
On-state resistance: 7.5mΩ
Pulsed drain current: 70A
Power dissipation: 1.56W
Gate charge: 23nC
Polarisation: unipolar
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN48A |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 30A
Power dissipation: 1.25W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
Pulsed drain current: 30A
Power dissipation: 1.25W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2973 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN50M3 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 5A
Pulsed drain current: 20A
On-state resistance: 27mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 5A
Pulsed drain current: 20A
On-state resistance: 27mΩ
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN560Q |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 31W
Gate charge: 27.8nC
Polarisation: unipolar
Version: ESD
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common drain
Case: DFN3030-8
On-state resistance: 5.4mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 31W
Gate charge: 27.8nC
Polarisation: unipolar
Version: ESD
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common drain
Case: DFN3030-8
On-state resistance: 5.4mΩ
auf Bestellung 369 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN60M3 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN70A |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DN70M3 |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 17mΩ
Gate charge: 9.6nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Drain current: 7A
Pulsed drain current: 28A
On-state resistance: 17mΩ
Gate charge: 9.6nC
Gate-source voltage: ±10V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02DP06T |
|
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: -2.64A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: -2.64A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02N20G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02P160R |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
| WM02P60M2 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
| WM03N115A |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| WM03N57M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2958 Stücke:
Lieferzeit 14-21 Tag (e)
| WM03N58M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
| WM03N58M2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 22A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 22A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
| WM03P42M |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -25A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -25A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.2A; Idm: -25A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -25A
auf Bestellung 2695 Stücke:
Lieferzeit 14-21 Tag (e)
| WM04N50M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 10nC
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)
| WM04P56M2 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| WM05N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05N03G |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05N03M |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2164 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05P02F |
|
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Case: DFN1006-3
Power dissipation: 0.35W
Gate charge: 2.1nC
Polarisation: unipolar
Version: ESD
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2Ω
Mounting: SMD
Pulsed drain current: -1A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Case: DFN1006-3
Power dissipation: 0.35W
Gate charge: 2.1nC
Polarisation: unipolar
Version: ESD
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.2Ω
Mounting: SMD
Pulsed drain current: -1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM05P02G |
|
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Case: SOT323
Power dissipation: 0.3W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Case: SOT323
Power dissipation: 0.3W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
auf Bestellung 2486 Stücke:
Lieferzeit 14-21 Tag (e)
| WM05P02M |
|
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW
Case: SOT23
Power dissipation: 0.38W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 380mW
Case: SOT23
Power dissipation: 0.38W
Gate charge: 1.5nC
Polarisation: unipolar
Version: ESD
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3Ω
Mounting: SMD
Pulsed drain current: -0.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM05P20M |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -2A; Idm: -8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| WM06N03FB |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03FE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03GE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
| WM06N03HE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03LE |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)