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WM02P06L WM02P06L WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2B6F586B780D6&compId=WM02P06L.pdf?ci_sign=ff381fc216592b051e898e4f6579ccdb40a1adcc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -1.2A; 150mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -1.2A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
562+0.13 EUR
1303+0.055 EUR
1859+0.038 EUR
2067+0.035 EUR
2200+0.033 EUR
Mindestbestellmenge: 186
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WM02P14G WM02P14G WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
544+0.13 EUR
1263+0.057 EUR
1806+0.04 EUR
2000+0.036 EUR
2370+0.03 EUR
2500+0.029 EUR
3000+0.028 EUR
Mindestbestellmenge: 179
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WM02P20G WM02P20G WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
481+0.15 EUR
1117+0.064 EUR
1598+0.045 EUR
2084+0.034 EUR
2203+0.032 EUR
Mindestbestellmenge: 167
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WM02P23M WM02P23M WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
463+0.15 EUR
1017+0.07 EUR
2428+0.029 EUR
2689+0.027 EUR
2997+0.024 EUR
Mindestbestellmenge: 173
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WM02P26M WM02P26M WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
424+0.17 EUR
897+0.08 EUR
Mindestbestellmenge: 157
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WM03DN06D WM03DN06D WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A1760E9D40D6&compId=WM03DN06D.pdf?ci_sign=c04aafe2cc87b2fb7f3eff086fee18f6c76375fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
527+0.14 EUR
1250+0.057 EUR
1393+0.051 EUR
1651+0.043 EUR
1749+0.041 EUR
Mindestbestellmenge: 179
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WM03DN85A WM03DN85A WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3800 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
407+0.18 EUR
575+0.12 EUR
642+0.11 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 152
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WM03DP50A WAYON Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 2.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
459+0.16 EUR
658+0.11 EUR
730+0.098 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 173
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WM03N01L WM03N01L WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1F7D02CFCE0D6&compId=WM03N01L.pdf?ci_sign=2954ec03f75b282ef9b059a144b3d09b94f3404b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; 200mW; SOT523; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1931+0.037 EUR
2137+0.033 EUR
2539+0.028 EUR
2674+0.027 EUR
Mindestbestellmenge: 193
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WM03N06M WM03N06M WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1FE7FDCC360D6&compId=WM03N06M.pdf?ci_sign=51f525bc143862541a97a607fac085d0d60d7eba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
353+0.2 EUR
1051+0.068 EUR
2340+0.03 EUR
Mindestbestellmenge: 152
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WM03N115A WM03N115A WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
336+0.21 EUR
421+0.17 EUR
443+0.16 EUR
527+0.14 EUR
556+0.13 EUR
Mindestbestellmenge: 120
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WM03P51A WM03P51A WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.1A; Idm: -20A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
550+0.13 EUR
920+0.078 EUR
1025+0.07 EUR
1229+0.058 EUR
1299+0.055 EUR
4000+0.053 EUR
Mindestbestellmenge: 186
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WM03P56M2 WM03P56M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
582+0.12 EUR
962+0.074 EUR
1073+0.067 EUR
1266+0.056 EUR
1341+0.053 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
WM04N50M WM04N50M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
407+0.18 EUR
955+0.075 EUR
1367+0.052 EUR
1902+0.038 EUR
2009+0.036 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
WM05DP01D WM05DP01D WAYON Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; Idm: -0.52A; 200mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Pulsed drain current: -0.52A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1812+0.039 EUR
1916+0.037 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM05N02G WM05N02G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2500+0.029 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM05N02M WM05N02M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
358+0.2 EUR
1069+0.067 EUR
2552+0.028 EUR
2825+0.025 EUR
3000+0.024 EUR
Mindestbestellmenge: 157
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WM05N03G WM05N03G WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D20B9B35CE80D6&compId=WM05N03G.pdf?ci_sign=809a7aa5e86a4e1b7b21f25b9a957e54c6e3b658 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1938+0.037 EUR
2146+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
3000+0.026 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM05P01G WM05P01G WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2464+0.029 EUR
Mindestbestellmenge: 157
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WM05P02F WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2C8788DC380D6&compId=WM05P02F.pdf?ci_sign=60c78e4b0a9892442f77515ab227735249e56cd5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM05P02G WM05P02G WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2CDA3923C80D6&compId=WM05P02G.pdf?ci_sign=99acd017703945ac55cb33865118252dcb4ef1d6 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
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WM06DN03DE WM06DN03DE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A64907B780D6&compId=WM06DN03DE.pdf?ci_sign=9a3bf3071e10da3aebf0f1f87ea1fac96132d0c5 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 340mA; Idm: 1.36A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
435+0.16 EUR
1017+0.07 EUR
1450+0.049 EUR
1887+0.038 EUR
2000+0.036 EUR
3000+0.035 EUR
Mindestbestellmenge: 152
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WM06N03FB WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2160A507500D6&compId=WM06N03FB.pdf?ci_sign=1e2ce95c7137a5d10ababb86e851dc9d684e0252 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03GE WM06N03GE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D221714DD720D6&compId=WM06N03GE.pdf?ci_sign=37cda92f350bd099923b8a6745fb9fcdb641336f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2476+0.029 EUR
2942+0.024 EUR
Mindestbestellmenge: 157
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WM06N03HE WM06N03HE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2286F76CF20D6&compId=WM06N03He.pdf?ci_sign=b04ecca13856d373a01ed860701c4243dce470e3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03LE WM06N03LE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D22E8D530B80D6&compId=WM06N03LE.pdf?ci_sign=6682f081a96e518ff70af6653cf371abdd3a31b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2900 Stücke:
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394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
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WM06N03ME WM06N03ME WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D235E1C4E9C0D6&compId=WM06N03ME.pdf?ci_sign=9825ba01b912f6687f2823634ce0cd91655b3f50 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2399 Stücke:
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447+0.16 EUR
1345+0.053 EUR
2399+0.03 EUR
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WM06P17MR WM06P17MR WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -6.8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Pulsed drain current: -6.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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310+0.23 EUR
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WM10N20M WM10N20M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2979 Stücke:
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167+0.43 EUR
477+0.15 EUR
1107+0.065 EUR
1583+0.045 EUR
2119+0.034 EUR
2243+0.032 EUR
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WM10N33M WM10N33M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
auf Bestellung 2888 Stücke:
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173+0.41 EUR
506+0.14 EUR
1202+0.059 EUR
1348+0.053 EUR
1651+0.043 EUR
1743+0.041 EUR
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WM10N35M3 WM10N35M3 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
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348+0.21 EUR
574+0.12 EUR
645+0.11 EUR
760+0.094 EUR
804+0.089 EUR
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WM10P20M2 WM10P20M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
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120+0.6 EUR
323+0.22 EUR
459+0.16 EUR
516+0.14 EUR
610+0.12 EUR
642+0.11 EUR
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WM4C62160A WM4C62160A WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1AC2B0065E0D6&compId=WM4C62160A.pdf?ci_sign=a6e86181c162d575bdc8742796f9affdba3a8f43 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 19.5mΩ
Version: ESD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 8A
auf Bestellung 500 Stücke:
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136+0.53 EUR
264+0.27 EUR
321+0.22 EUR
391+0.18 EUR
414+0.17 EUR
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WM6C61042A
+1
 		WM6C61042A WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1B1CFB953E0D6&compId=WM6C61042A.pdf?ci_sign=d9963b69f81c92ed09d30bc27410da0e3036c47d Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
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129+0.56 EUR
211+0.34 EUR
233+0.31 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 129
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WMAA4N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
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WMAA4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA6N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB009N03LG4 WMB009N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
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66+1.09 EUR
70+1.02 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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WMB010N04LG4 WMB010N04LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 268A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 118nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1072A
Case: PDFN5060-8
auf Bestellung 22 Stücke:
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22+3.25 EUR
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WMB014N04LG4 WMB014N04LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 69 Stücke:
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67+1.07 EUR
69+1.03 EUR
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WMB014N06HG4 WMB014N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB014N06LG4 WMB014N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 34 Stücke:
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34+2.1 EUR
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WMB017N03LG2 WMB017N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 84 Stücke:
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68+1.06 EUR
84+0.86 EUR
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WMB020N03LG4 WMB020N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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84+0.86 EUR
100+0.72 EUR
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WMB020N06HG4 WMB020N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 70 Stücke:
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63+1.14 EUR
66+1.08 EUR
70+1.02 EUR
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WMB023N03LG2 WMB023N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
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85+0.84 EUR
122+0.59 EUR
135+0.53 EUR
163+0.44 EUR
172+0.42 EUR
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WMB025N06HG4 WMB025N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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69+1.04 EUR
73+0.98 EUR
87+0.83 EUR
92+0.79 EUR
Mindestbestellmenge: 69
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WMB025N06LG4 WMB025N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
73+0.98 EUR
87+0.83 EUR
92+0.79 EUR
Mindestbestellmenge: 69
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WMB027N08HG4 WMB027N08HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB034N06HG4 WMB034N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
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70+1.03 EUR
81+0.89 EUR
96+0.75 EUR
98+0.73 EUR
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WMB034N06LG4 WMB034N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 27 Stücke:
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27+2.65 EUR
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WMB037N10HGS WMB037N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB03DN06T1 WMB03DN06T1 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 6.94W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 0.11Ω
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 24A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
203+0.35 EUR
243+0.29 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 99
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WMB040N03LG2 WMB040N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
214+0.33 EUR
239+0.3 EUR
281+0.25 EUR
298+0.24 EUR
Mindestbestellmenge: 129
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WMB043N10HGS WMB043N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 98.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
66+1.09 EUR
82+0.88 EUR
86+0.83 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMB043N10LGS WMB043N10LGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
66+1.09 EUR
82+0.88 EUR
86+0.83 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMB048NV6HG4 WMB048NV6HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 95A; Idm: 380A; 73.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
WMB049N12HG2 WMB049N12HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
39+1.86 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMB050N03LG4 WMB050N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
242+0.3 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WM02P06L pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2B6F586B780D6&compId=WM02P06L.pdf?ci_sign=ff381fc216592b051e898e4f6579ccdb40a1adcc
WM02P06L
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -1.2A; 150mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -1.2A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
562+0.13 EUR
1303+0.055 EUR
1859+0.038 EUR
2067+0.035 EUR
2200+0.033 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02P14G
WM02P14G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
544+0.13 EUR
1263+0.057 EUR
1806+0.04 EUR
2000+0.036 EUR
2370+0.03 EUR
2500+0.029 EUR
3000+0.028 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WM02P20G
WM02P20G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
481+0.15 EUR
1117+0.064 EUR
1598+0.045 EUR
2084+0.034 EUR
2203+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM02P23M
WM02P23M
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
463+0.15 EUR
1017+0.07 EUR
2428+0.029 EUR
2689+0.027 EUR
2997+0.024 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02P26M
WM02P26M
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
424+0.17 EUR
897+0.08 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM03DN06D pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A1760E9D40D6&compId=WM03DN06D.pdf?ci_sign=c04aafe2cc87b2fb7f3eff086fee18f6c76375fd
WM03DN06D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
527+0.14 EUR
1250+0.057 EUR
1393+0.051 EUR
1651+0.043 EUR
1749+0.041 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WM03DN85A
WM03DN85A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
407+0.18 EUR
575+0.12 EUR
642+0.11 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM03DP50A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 2.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
459+0.16 EUR
658+0.11 EUR
730+0.098 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM03N01L pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1F7D02CFCE0D6&compId=WM03N01L.pdf?ci_sign=2954ec03f75b282ef9b059a144b3d09b94f3404b
WM03N01L
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; 200mW; SOT523; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1931+0.037 EUR
2137+0.033 EUR
2539+0.028 EUR
2674+0.027 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM03N06M pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1FE7FDCC360D6&compId=WM03N06M.pdf?ci_sign=51f525bc143862541a97a607fac085d0d60d7eba
WM03N06M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
353+0.2 EUR
1051+0.068 EUR
2340+0.03 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM03N115A
WM03N115A
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
336+0.21 EUR
421+0.17 EUR
443+0.16 EUR
527+0.14 EUR
556+0.13 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM03P51A
WM03P51A
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.1A; Idm: -20A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
550+0.13 EUR
920+0.078 EUR
1025+0.07 EUR
1229+0.058 EUR
1299+0.055 EUR
4000+0.053 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM03P56M2
WM03P56M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
582+0.12 EUR
962+0.074 EUR
1073+0.067 EUR
1266+0.056 EUR
1341+0.053 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
WM04N50M
WM04N50M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
407+0.18 EUR
955+0.075 EUR
1367+0.052 EUR
1902+0.038 EUR
2009+0.036 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
WM05DP01D
WM05DP01D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -130mA; Idm: -0.52A; 200mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Pulsed drain current: -0.52A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1812+0.039 EUR
1916+0.037 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM05N02G
WM05N02G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2500+0.029 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM05N02M
WM05N02M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
358+0.2 EUR
1069+0.067 EUR
2552+0.028 EUR
2825+0.025 EUR
3000+0.024 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM05N03G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D20B9B35CE80D6&compId=WM05N03G.pdf?ci_sign=809a7aa5e86a4e1b7b21f25b9a957e54c6e3b658
WM05N03G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1938+0.037 EUR
2146+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
3000+0.026 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM05P01G
WM05P01G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2464+0.029 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02F pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2C8788DC380D6&compId=WM05P02F.pdf?ci_sign=60c78e4b0a9892442f77515ab227735249e56cd5
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2CDA3923C80D6&compId=WM05P02G.pdf?ci_sign=99acd017703945ac55cb33865118252dcb4ef1d6
WM05P02G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM06DN03DE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A64907B780D6&compId=WM06DN03DE.pdf?ci_sign=9a3bf3071e10da3aebf0f1f87ea1fac96132d0c5
WM06DN03DE
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 340mA; Idm: 1.36A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
435+0.16 EUR
1017+0.07 EUR
1450+0.049 EUR
1887+0.038 EUR
2000+0.036 EUR
3000+0.035 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FB pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2160A507500D6&compId=WM06N03FB.pdf?ci_sign=1e2ce95c7137a5d10ababb86e851dc9d684e0252
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03GE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D221714DD720D6&compId=WM06N03GE.pdf?ci_sign=37cda92f350bd099923b8a6745fb9fcdb641336f
WM06N03GE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2476+0.029 EUR
2942+0.024 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03HE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2286F76CF20D6&compId=WM06N03He.pdf?ci_sign=b04ecca13856d373a01ed860701c4243dce470e3
WM06N03HE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03LE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D22E8D530B80D6&compId=WM06N03LE.pdf?ci_sign=6682f081a96e518ff70af6653cf371abdd3a31b1
WM06N03LE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03ME pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D235E1C4E9C0D6&compId=WM06N03ME.pdf?ci_sign=9825ba01b912f6687f2823634ce0cd91655b3f50
WM06N03ME
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
447+0.16 EUR
1345+0.053 EUR
2399+0.03 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM06P17MR
WM06P17MR
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -6.8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Pulsed drain current: -6.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
310+0.23 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM10N20M
WM10N20M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
477+0.15 EUR
1107+0.065 EUR
1583+0.045 EUR
2119+0.034 EUR
2243+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM10N33M
WM10N33M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
auf Bestellung 2888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
506+0.14 EUR
1202+0.059 EUR
1348+0.053 EUR
1651+0.043 EUR
1743+0.041 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM10N35M3
WM10N35M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
348+0.21 EUR
574+0.12 EUR
645+0.11 EUR
760+0.094 EUR
804+0.089 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM10P20M2
WM10P20M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
323+0.22 EUR
459+0.16 EUR
516+0.14 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM4C62160A pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1AC2B0065E0D6&compId=WM4C62160A.pdf?ci_sign=a6e86181c162d575bdc8742796f9affdba3a8f43
WM4C62160A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 19.5mΩ
Version: ESD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 8A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
264+0.27 EUR
321+0.22 EUR
391+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WM6C61042A pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1B1CFB953E0D6&compId=WM6C61042A.pdf?ci_sign=d9963b69f81c92ed09d30bc27410da0e3036c47d
WM6C61042A
+1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
211+0.34 EUR
233+0.31 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA6N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB009N03LG4
WMB009N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
70+1.02 EUR
74+0.97 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMB010N04LG4
WMB010N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 268A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 118nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1072A
Case: PDFN5060-8
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N04LG4
WMB014N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
69+1.03 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06HG4
WMB014N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06LG4
WMB014N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
WMB017N03LG2
WMB017N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
84+0.86 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
WMB020N03LG4
WMB020N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
100+0.72 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
WMB020N06HG4
WMB020N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
66+1.08 EUR
70+1.02 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
WMB023N03LG2
WMB023N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
122+0.59 EUR
135+0.53 EUR
163+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06HG4
WMB025N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
73+0.98 EUR
87+0.83 EUR
92+0.79 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06LG4
WMB025N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
73+0.98 EUR
87+0.83 EUR
92+0.79 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMB027N08HG4
WMB027N08HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06HG4
WMB034N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
81+0.89 EUR
96+0.75 EUR
98+0.73 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06LG4
WMB034N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMB037N10HGS
WMB037N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 544A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 544A
Power dissipation: 142W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 79.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB03DN06T1
WMB03DN06T1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; Idm: 24A; 6.94W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 6.94W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 0.11Ω
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 24A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
203+0.35 EUR
243+0.29 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WMB040N03LG2
WMB040N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 38A
Pulsed drain current: 121A
Power dissipation: 28W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
214+0.33 EUR
239+0.3 EUR
281+0.25 EUR
298+0.24 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMB043N10HGS
WMB043N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 98.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
66+1.09 EUR
82+0.88 EUR
86+0.83 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMB043N10LGS
WMB043N10LGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
66+1.09 EUR
82+0.88 EUR
86+0.83 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMB048NV6HG4
WMB048NV6HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 95A; Idm: 380A; 73.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 95A
Pulsed drain current: 380A
Power dissipation: 73.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
WMB049N12HG2
WMB049N12HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 66A; Idm: 420A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 66A
Pulsed drain current: 420A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
39+1.86 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
WMB050N03LG4
WMB050N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 65A; Idm: 260A; 31.25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 31.25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
242+0.3 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
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