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WM02N31M WM02N31M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1924+0.037 EUR
2128+0.034 EUR
2526+0.028 EUR
2674+0.027 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM02N50M WM02N50M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 5A
auf Bestellung 2963 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
481+0.15 EUR
1117+0.064 EUR
1598+0.045 EUR
2110+0.034 EUR
2233+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM02P06G WM02P06G WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2AA2C408D00D6&compId=WM02P06G.pdf?ci_sign=21067e27acd61d963ef802c088c422bb848ea60c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.64A; 200mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
1725+0.041 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02P14G WM02P14G WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
544+0.13 EUR
1263+0.057 EUR
1806+0.04 EUR
2000+0.036 EUR
2370+0.03 EUR
2500+0.029 EUR
3000+0.028 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WM02P160R WM02P160R WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 28nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
341+0.21 EUR
424+0.17 EUR
447+0.16 EUR
538+0.13 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02P20G WM02P20G WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
481+0.15 EUR
1117+0.064 EUR
1598+0.045 EUR
2084+0.034 EUR
2203+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM02P23M WM02P23M WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
463+0.15 EUR
1017+0.07 EUR
2428+0.029 EUR
2689+0.027 EUR
2997+0.024 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02P26M WM02P26M WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
424+0.17 EUR
897+0.08 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02P40M3 WM02P40M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2BDB60F5640D6&compId=WM02P40M3.pdf?ci_sign=45483d0cfa3091ed0f46ddd5e29071a790cf976b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -16A; 1.8W; SOT23-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.8W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
496+0.14 EUR
1191+0.06 EUR
1327+0.054 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM02P56M3 WM02P56M3 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
521+0.14 EUR
869+0.082 EUR
962+0.074 EUR
1153+0.062 EUR
1217+0.059 EUR
Mindestbestellmenge: 179
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WM03DN06D WM03DN06D WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A1760E9D40D6&compId=WM03DN06D.pdf?ci_sign=c04aafe2cc87b2fb7f3eff086fee18f6c76375fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
527+0.14 EUR
1250+0.057 EUR
1393+0.051 EUR
1651+0.043 EUR
1749+0.041 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WM03DP50A WAYON Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 2.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
459+0.16 EUR
658+0.11 EUR
730+0.098 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM03N01G WM03N01G WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1EBD1DF30E0D6&compId=WM03N01G.pdf?ci_sign=d9e094b8f313904af995ee5de07fa9a39f2578ae Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; Idm: 0.4A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Pulsed drain current: 0.4A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 540pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM03N01L WM03N01L WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1F7D02CFCE0D6&compId=WM03N01L.pdf?ci_sign=2954ec03f75b282ef9b059a144b3d09b94f3404b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; 200mW; SOT523; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1931+0.037 EUR
2137+0.033 EUR
2539+0.028 EUR
2674+0.027 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM03N06M WM03N06M WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1FE7FDCC360D6&compId=WM03N06M.pdf?ci_sign=51f525bc143862541a97a607fac085d0d60d7eba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2215 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
365+0.2 EUR
1097+0.065 EUR
2215+0.033 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
WM03N115A WM03N115A WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
336+0.21 EUR
421+0.17 EUR
443+0.16 EUR
527+0.14 EUR
556+0.13 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM03P51A WM03P51A WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.1A; Idm: -20A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
550+0.13 EUR
920+0.078 EUR
1025+0.07 EUR
1229+0.058 EUR
1299+0.055 EUR
4000+0.053 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM03P56M2 WM03P56M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
582+0.12 EUR
962+0.074 EUR
1073+0.067 EUR
1266+0.056 EUR
1341+0.053 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
WM03P91A WM03P91A WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.1A; Idm: -36A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.1A
Pulsed drain current: -36A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
350+0.2 EUR
435+0.16 EUR
463+0.15 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WM04N50M WM04N50M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2905 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
428+0.17 EUR
1009+0.071 EUR
1433+0.05 EUR
1902+0.038 EUR
2009+0.036 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM05N02G WM05N02G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2500+0.029 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM05N03G WM05N03G WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D20B9B35CE80D6&compId=WM05N03G.pdf?ci_sign=809a7aa5e86a4e1b7b21f25b9a957e54c6e3b658 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1938+0.037 EUR
2146+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
3000+0.026 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM05P01G WM05P01G WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2464+0.029 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02F WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2C8788DC380D6&compId=WM05P02F.pdf?ci_sign=60c78e4b0a9892442f77515ab227735249e56cd5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02G WM05P02G WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2CDA3923C80D6&compId=WM05P02G.pdf?ci_sign=99acd017703945ac55cb33865118252dcb4ef1d6 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
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WM06DN03DE WM06DN03DE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A64907B780D6&compId=WM06DN03DE.pdf?ci_sign=9a3bf3071e10da3aebf0f1f87ea1fac96132d0c5 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 340mA; Idm: 1.36A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
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152+0.47 EUR
435+0.16 EUR
1017+0.07 EUR
1450+0.049 EUR
1887+0.038 EUR
2000+0.036 EUR
3000+0.035 EUR
Mindestbestellmenge: 152
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WM06N03FB WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2160A507500D6&compId=WM06N03FB.pdf?ci_sign=1e2ce95c7137a5d10ababb86e851dc9d684e0252 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03FE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D21AFCB35AA0D6&compId=WM06N03FE.pdf?ci_sign=d948b517c4804dfe3bf977a1385e35a9e146e6b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03GE WM06N03GE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D221714DD720D6&compId=WM06N03GE.pdf?ci_sign=37cda92f350bd099923b8a6745fb9fcdb641336f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
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157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2476+0.029 EUR
2942+0.024 EUR
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WM06N03HE WM06N03HE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2286F76CF20D6&compId=WM06N03He.pdf?ci_sign=b04ecca13856d373a01ed860701c4243dce470e3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03LE WM06N03LE WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D22E8D530B80D6&compId=WM06N03LE.pdf?ci_sign=6682f081a96e518ff70af6653cf371abdd3a31b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
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WM06N03ME WM06N03ME WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D235E1C4E9C0D6&compId=WM06N03ME.pdf?ci_sign=9825ba01b912f6687f2823634ce0cd91655b3f50 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2399 Stücke:
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167+0.43 EUR
447+0.16 EUR
1345+0.053 EUR
2399+0.03 EUR
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WM06P17MR WM06P17MR WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -6.8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Pulsed drain current: -6.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 310 Stücke:
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193+0.37 EUR
310+0.23 EUR
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WM10N02G WM10N02G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
394+0.18 EUR
863+0.083 EUR
2058+0.035 EUR
2284+0.031 EUR
2500+0.029 EUR
2646+0.027 EUR
Mindestbestellmenge: 173
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WM10N02M WM10N02M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
404+0.18 EUR
1202+0.059 EUR
2874+0.025 EUR
3000+0.024 EUR
Mindestbestellmenge: 152
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WM10N20M WM10N20M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2979 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
477+0.15 EUR
1107+0.065 EUR
1583+0.045 EUR
2119+0.034 EUR
2243+0.032 EUR
Mindestbestellmenge: 167
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WM10N35M2 WM10N35M2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2936 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
368+0.19 EUR
610+0.12 EUR
680+0.11 EUR
803+0.089 EUR
849+0.084 EUR
Mindestbestellmenge: 129
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WM10N35M3 WM10N35M3 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
348+0.21 EUR
574+0.12 EUR
645+0.11 EUR
760+0.094 EUR
804+0.089 EUR
Mindestbestellmenge: 120
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WM10P20M2 WM10P20M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
323+0.22 EUR
459+0.16 EUR
516+0.14 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 120
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WM12N35M2 WM12N35M2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
350+0.2 EUR
577+0.12 EUR
649+0.11 EUR
763+0.094 EUR
807+0.089 EUR
3000+0.088 EUR
Mindestbestellmenge: 122
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WM4C62160A WM4C62160A WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1AC2B0065E0D6&compId=WM4C62160A.pdf?ci_sign=a6e86181c162d575bdc8742796f9affdba3a8f43 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Drain current: 8A
Gate charge: 13nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
266+0.27 EUR
323+0.22 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 136
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WM6C61042A
+1
 		WM6C61042A WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1B1CFB953E0D6&compId=WM6C61042A.pdf?ci_sign=d9963b69f81c92ed09d30bc27410da0e3036c47d Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
222+0.32 EUR
246+0.29 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 136
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WMAA2N100D1 WMAA2N100D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA4N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
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WMAA4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA6N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB007N03LG4 WMB007N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 220A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 220A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
61+1.17 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 59
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WMB009N03LG4 WMB009N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
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66+1.09 EUR
70+1.02 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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WMB014N04LG4 WMB014N04LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Gate charge: 116nC
On-state resistance: 1.4mΩ
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain current: 165A
Drain-source voltage: 40V
Pulsed drain current: 660A
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.03 EUR
Mindestbestellmenge: 69
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WMB014N06HG4 WMB014N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB014N06LG4 WMB014N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB017N03LG2 WMB017N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
84+0.86 EUR
Mindestbestellmenge: 68
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WMB020N03LG4 WMB020N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
100+0.72 EUR
Mindestbestellmenge: 84
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WMB020N06HG4 WMB020N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
67+1.07 EUR
70+1.02 EUR
Mindestbestellmenge: 64
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WMB023N03LG2 WMB023N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
123+0.58 EUR
137+0.52 EUR
162+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 87
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WMB025N06HG4 WMB025N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 92.6W
Drain current: 140A
Pulsed drain current: 560A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
73+0.99 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06LG4 WMB025N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 73.5nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 92.6W
Drain current: 140A
Pulsed drain current: 560A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
73+0.99 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMB027N08HG4 WMB027N08HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06HG4 WMB034N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
81+0.89 EUR
96+0.75 EUR
98+0.73 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
WM02N31M
WM02N31M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1924+0.037 EUR
2128+0.034 EUR
2526+0.028 EUR
2674+0.027 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM02N50M
WM02N50M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 5A
auf Bestellung 2963 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
481+0.15 EUR
1117+0.064 EUR
1598+0.045 EUR
2110+0.034 EUR
2233+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM02P06G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2AA2C408D00D6&compId=WM02P06G.pdf?ci_sign=21067e27acd61d963ef802c088c422bb848ea60c
WM02P06G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.64A; 200mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
1725+0.041 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02P14G
WM02P14G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -5.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -5.6A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
544+0.13 EUR
1263+0.057 EUR
1806+0.04 EUR
2000+0.036 EUR
2370+0.03 EUR
2500+0.029 EUR
3000+0.028 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WM02P160R
WM02P160R
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 28nC
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
341+0.21 EUR
424+0.17 EUR
447+0.16 EUR
538+0.13 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02P20G
WM02P20G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 250mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 0.25W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
481+0.15 EUR
1117+0.064 EUR
1598+0.045 EUR
2084+0.034 EUR
2203+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM02P23M
WM02P23M
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -9.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -9.2A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
463+0.15 EUR
1017+0.07 EUR
2428+0.029 EUR
2689+0.027 EUR
2997+0.024 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02P26M
WM02P26M
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; Idm: -10A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Pulsed drain current: -10A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
424+0.17 EUR
897+0.08 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02P40M3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2BDB60F5640D6&compId=WM02P40M3.pdf?ci_sign=45483d0cfa3091ed0f46ddd5e29071a790cf976b
WM02P40M3
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -16A; 1.8W; SOT23-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.8W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
496+0.14 EUR
1191+0.06 EUR
1327+0.054 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM02P56M3
WM02P56M3
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; Idm: -22.4A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 14.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
521+0.14 EUR
869+0.082 EUR
962+0.074 EUR
1153+0.062 EUR
1217+0.059 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WM03DN06D pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A1760E9D40D6&compId=WM03DN06D.pdf?ci_sign=c04aafe2cc87b2fb7f3eff086fee18f6c76375fd
WM03DN06D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
527+0.14 EUR
1250+0.057 EUR
1393+0.051 EUR
1651+0.043 EUR
1749+0.041 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WM03DP50A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 2.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
459+0.16 EUR
658+0.11 EUR
730+0.098 EUR
867+0.083 EUR
916+0.078 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM03N01G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1EBD1DF30E0D6&compId=WM03N01G.pdf?ci_sign=d9e094b8f313904af995ee5de07fa9a39f2578ae
WM03N01G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; Idm: 0.4A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Pulsed drain current: 0.4A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 540pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM03N01L pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1F7D02CFCE0D6&compId=WM03N01L.pdf?ci_sign=2954ec03f75b282ef9b059a144b3d09b94f3404b
WM03N01L
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100mA; 200mW; SOT523; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.2W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1931+0.037 EUR
2137+0.033 EUR
2539+0.028 EUR
2674+0.027 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM03N06M pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1FE7FDCC360D6&compId=WM03N06M.pdf?ci_sign=51f525bc143862541a97a607fac085d0d60d7eba
WM03N06M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
365+0.2 EUR
1097+0.065 EUR
2215+0.033 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
WM03N115A
WM03N115A
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; Idm: 46A; 2.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
336+0.21 EUR
421+0.17 EUR
443+0.16 EUR
527+0.14 EUR
556+0.13 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM03P51A
WM03P51A
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.1A; Idm: -20A; 2.5W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
550+0.13 EUR
920+0.078 EUR
1025+0.07 EUR
1229+0.058 EUR
1299+0.055 EUR
4000+0.053 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM03P56M2
WM03P56M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
582+0.12 EUR
962+0.074 EUR
1073+0.067 EUR
1266+0.056 EUR
1341+0.053 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
WM03P91A
WM03P91A
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.1A; Idm: -36A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.1A
Pulsed drain current: -36A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
350+0.2 EUR
435+0.16 EUR
463+0.15 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WM04N50M
WM04N50M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
428+0.17 EUR
1009+0.071 EUR
1433+0.05 EUR
1902+0.038 EUR
2009+0.036 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM05N02G
WM05N02G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2500+0.029 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM05N03G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D20B9B35CE80D6&compId=WM05N03G.pdf?ci_sign=809a7aa5e86a4e1b7b21f25b9a957e54c6e3b658
WM05N03G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 300mA; Idm: 1.2A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
582+0.12 EUR
1345+0.053 EUR
1938+0.037 EUR
2146+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
3000+0.026 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM05P01G
WM05P01G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -0.52A; 225mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.13A
Pulsed drain current: -0.52A
Power dissipation: 0.225W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2464+0.029 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02F pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2C8788DC380D6&compId=WM05P02F.pdf?ci_sign=60c78e4b0a9892442f77515ab227735249e56cd5
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2CDA3923C80D6&compId=WM05P02G.pdf?ci_sign=99acd017703945ac55cb33865118252dcb4ef1d6
WM05P02G
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -200mA; Idm: -0.8A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
397+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM06DN03DE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1A64907B780D6&compId=WM06DN03DE.pdf?ci_sign=9a3bf3071e10da3aebf0f1f87ea1fac96132d0c5
WM06DN03DE
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 340mA; Idm: 1.36A; 200mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
435+0.16 EUR
1017+0.07 EUR
1450+0.049 EUR
1887+0.038 EUR
2000+0.036 EUR
3000+0.035 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FB pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2160A507500D6&compId=WM06N03FB.pdf?ci_sign=1e2ce95c7137a5d10ababb86e851dc9d684e0252
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D21AFCB35AA0D6&compId=WM06N03FE.pdf?ci_sign=d948b517c4804dfe3bf977a1385e35a9e146e6b4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03GE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D221714DD720D6&compId=WM06N03GE.pdf?ci_sign=37cda92f350bd099923b8a6745fb9fcdb641336f
WM06N03GE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
424+0.17 EUR
933+0.077 EUR
2223+0.032 EUR
2476+0.029 EUR
2942+0.024 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03HE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D2286F76CF20D6&compId=WM06N03He.pdf?ci_sign=b04ecca13856d373a01ed860701c4243dce470e3
WM06N03HE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03LE pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D22E8D530B80D6&compId=WM06N03LE.pdf?ci_sign=6682f081a96e518ff70af6653cf371abdd3a31b1
WM06N03LE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
394+0.18 EUR
869+0.082 EUR
2067+0.035 EUR
2294+0.031 EUR
2718+0.026 EUR
2874+0.025 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03ME pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D235E1C4E9C0D6&compId=WM06N03ME.pdf?ci_sign=9825ba01b912f6687f2823634ce0cd91655b3f50
WM06N03ME
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2399 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
447+0.16 EUR
1345+0.053 EUR
2399+0.03 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM06P17MR
WM06P17MR
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -6.8A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Pulsed drain current: -6.8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
310+0.23 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM10N02G
WM10N02G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
394+0.18 EUR
863+0.083 EUR
2058+0.035 EUR
2284+0.031 EUR
2500+0.029 EUR
2646+0.027 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM10N02M
WM10N02M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
404+0.18 EUR
1202+0.059 EUR
2874+0.025 EUR
3000+0.024 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM10N20M
WM10N20M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
477+0.15 EUR
1107+0.065 EUR
1583+0.045 EUR
2119+0.034 EUR
2243+0.032 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
WM10N35M2
WM10N35M2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2936 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
368+0.19 EUR
610+0.12 EUR
680+0.11 EUR
803+0.089 EUR
849+0.084 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WM10N35M3
WM10N35M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
348+0.21 EUR
574+0.12 EUR
645+0.11 EUR
760+0.094 EUR
804+0.089 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM10P20M2
WM10P20M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
323+0.22 EUR
459+0.16 EUR
516+0.14 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM12N35M2
WM12N35M2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
350+0.2 EUR
577+0.12 EUR
649+0.11 EUR
763+0.094 EUR
807+0.089 EUR
3000+0.088 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM4C62160A pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1AC2B0065E0D6&compId=WM4C62160A.pdf?ci_sign=a6e86181c162d575bdc8742796f9affdba3a8f43
WM4C62160A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Drain current: 8A
Gate charge: 13nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Version: ESD
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
266+0.27 EUR
323+0.22 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WM6C61042A pVersion=0046&contRep=ZT&docId=005056AB281E1EDF85D1B1CFB953E0D6&compId=WM6C61042A.pdf?ci_sign=d9963b69f81c92ed09d30bc27410da0e3036c47d
WM6C61042A
+1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
222+0.32 EUR
246+0.29 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMAA2N100D1
WMAA2N100D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA6N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB007N03LG4
WMB007N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 220A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 220A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
61+1.17 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 59
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WMB009N03LG4
WMB009N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
70+1.02 EUR
74+0.97 EUR
Mindestbestellmenge: 66
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WMB014N04LG4
WMB014N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Gate charge: 116nC
On-state resistance: 1.4mΩ
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain current: 165A
Drain-source voltage: 40V
Pulsed drain current: 660A
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.03 EUR
Mindestbestellmenge: 69
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WMB014N06HG4
WMB014N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB014N06LG4
WMB014N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB017N03LG2
WMB017N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
84+0.86 EUR
Mindestbestellmenge: 68
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WMB020N03LG4
WMB020N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
100+0.72 EUR
Mindestbestellmenge: 84
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WMB020N06HG4
WMB020N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
67+1.07 EUR
70+1.02 EUR
Mindestbestellmenge: 64
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WMB023N03LG2
WMB023N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
123+0.58 EUR
137+0.52 EUR
162+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 87
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WMB025N06HG4
WMB025N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 92.6W
Drain current: 140A
Pulsed drain current: 560A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
73+0.99 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06LG4
WMB025N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 73.5nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 92.6W
Drain current: 140A
Pulsed drain current: 560A
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
73+0.99 EUR
87+0.83 EUR
92+0.78 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMB027N08HG4
WMB027N08HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMB034N06HG4
WMB034N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
81+0.89 EUR
96+0.75 EUR
98+0.73 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
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