| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WM04N50M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Pulsed drain current: 19A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM04P50M | WAYON | WM04P50M-CYG SMD P channel transistors |
auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM04P56M2 | WAYON | WM04P56M2-CYG SMD P channel transistors |
auf Bestellung 2265 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05DP01D | WAYON | WM05DP01D-CYG Multi channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N02G | WAYON | WM05N02G-CYG SMD N channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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WM05N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 1A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM05N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5nC Pulsed drain current: 1A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N03G | WAYON | WM05N03G-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05N03M | WAYON | WM05N03M-CYG SMD N channel transistors |
auf Bestellung 2165 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P01G | WAYON | WM05P01G-CYG SMD P channel transistors |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P01M | WAYON | WM05P01M-CYG SMD P channel transistors |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P02F | WAYON |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -250mA Pulsed drain current: -1A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM05P02G | WAYON | WM05P02G-CYG SMD P channel transistors |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM05P20M | WAYON | WM05P20M-CYG SMD P channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06DN03DE | WAYON | WM06DN03DE-CYG Multi channel transistors |
auf Bestellung 2754 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N03FB | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.36W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM06N03GE | WAYON | WM06N03GE-CYG SMD N channel transistors |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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WM06N03HE | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WM06N03LE | WAYON | WM06N03LE-CYG SMD N channel transistors |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N03ME | WAYON | WM06N03ME-CYG SMD N channel transistors |
auf Bestellung 2397 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30M | WAYON | WM06N30M-CYG SMD N channel transistors |
auf Bestellung 962 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06N30MS | WAYON | WM06N30MS-CYG SMD N channel transistors |
auf Bestellung 2147 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM06P17MR | WAYON | WM06P17MR-CYG SMD P channel transistors |
auf Bestellung 265 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM10N02G | WAYON | WM10N02G-CYG SMD N channel transistors |
auf Bestellung 2944 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM10N02M | WAYON | WM10N02M-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2327 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2327 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM10N33M | WAYON | WM10N33M-CYG SMD N channel transistors |
auf Bestellung 2863 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM10N35M2 | WAYON | WM10N35M2-CYG SMD N channel transistors |
auf Bestellung 2861 Stücke: Lieferzeit 7-14 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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WM10N35M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2978 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM10P20M2 | WAYON | WM10P20M2-CYG SMD P channel transistors |
auf Bestellung 2862 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM12N35M2 | WAYON | WM12N35M2-CYG SMD N channel transistors |
auf Bestellung 2973 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM15P10M2 | WAYON | WM15P10M2-CYG SMD P channel transistors |
auf Bestellung 2975 Stücke: Lieferzeit 7-14 Tag (e) |
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WM4C62160A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: CSP1515-4 Mounting: SMD Kind of package: reel; tape On-state resistance: 19.5mΩ Gate charge: 13nC Drain current: 8A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WM4C62160A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: CSP1515-4 Mounting: SMD Kind of package: reel; tape On-state resistance: 19.5mΩ Gate charge: 13nC Drain current: 8A Gate-source voltage: ±12V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WM6C61042A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 8A Power dissipation: 0.45W Case: CSP6 Gate-source voltage: ±10V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain Version: ESD |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WM6C61042A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 8A Power dissipation: 0.45W Case: CSP6 Gate-source voltage: ±10V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: common drain Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMAA2N100D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Pulsed drain current: 8A Power dissipation: 60W Case: TO251 Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMAA4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMAA6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMB007N03LG4 | WAYON | WMB007N03LG4-CYG SMD N channel transistors |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB009N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 200A Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB009N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 200A Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB010N04LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 118nC On-state resistance: 1mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 114W Drain current: 268A Pulsed drain current: 1072A Case: PDFN5060-8 |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB010N04LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 118nC On-state resistance: 1mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 114W Drain current: 268A Pulsed drain current: 1072A Case: PDFN5060-8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB014N04LG4 | WAYON | WMB014N04LG4-CYG SMD N channel transistors |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMB014N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 143.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB014N06LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 278A Pulsed drain current: 1112A Power dissipation: 183.8W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 143.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 164 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB017N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 63.3A Pulsed drain current: 400A Power dissipation: 30.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB017N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 63.3A Pulsed drain current: 400A Power dissipation: 30.5W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 50W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 29.5nC Pulsed drain current: 500A |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 50W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 29.5nC Pulsed drain current: 500A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 174A Pulsed drain current: 696A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 174A Pulsed drain current: 696A Power dissipation: 113.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 251A Power dissipation: 49W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 251A Power dissipation: 49W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 198 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM04N50M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 400+ | 0.18 EUR |
| 940+ | 0.076 EUR |
| 1341+ | 0.053 EUR |
| 1484+ | 0.048 EUR |
| 3000+ | 0.038 EUR |
| 6000+ | 0.037 EUR |
| WM04P50M |
Hersteller: WAYON
WM04P50M-CYG SMD P channel transistors
WM04P50M-CYG SMD P channel transistors
auf Bestellung 2800 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM04P56M2 |
Hersteller: WAYON
WM04P56M2-CYG SMD P channel transistors
WM04P56M2-CYG SMD P channel transistors
auf Bestellung 2265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 168+ | 0.43 EUR |
| 1185+ | 0.06 EUR |
| 1254+ | 0.057 EUR |
| 12000+ | 0.056 EUR |
| WM05DP01D |
Hersteller: WAYON
WM05DP01D-CYG Multi channel transistors
WM05DP01D-CYG Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM05N02G |
Hersteller: WAYON
WM05N02G-CYG SMD N channel transistors
WM05N02G-CYG SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2500+ | 0.029 EUR |
| 12000+ | 0.025 EUR |
| WM05N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 363+ | 0.2 EUR |
| 1087+ | 0.066 EUR |
| 2605+ | 0.027 EUR |
| 2874+ | 0.025 EUR |
| 3000+ | 0.024 EUR |
| WM05N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 1A; 300mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
Pulsed drain current: 1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 363+ | 0.2 EUR |
| 1087+ | 0.066 EUR |
| 2605+ | 0.027 EUR |
| 2874+ | 0.025 EUR |
| 3000+ | 0.024 EUR |
| 6000+ | 0.019 EUR |
| WM05N03G |
Hersteller: WAYON
WM05N03G-CYG SMD N channel transistors
WM05N03G-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 2526+ | 0.028 EUR |
| 2674+ | 0.027 EUR |
| 12000+ | 0.026 EUR |
| WM05N03M |
Hersteller: WAYON
WM05N03M-CYG SMD N channel transistors
WM05N03M-CYG SMD N channel transistors
auf Bestellung 2165 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.48 EUR |
| 2165+ | 0.033 EUR |
| 12000+ | 0.021 EUR |
| WM05P01G |
Hersteller: WAYON
WM05P01G-CYG SMD P channel transistors
WM05P01G-CYG SMD P channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 662+ | 0.11 EUR |
| 1819+ | 0.039 EUR |
| 12000+ | 0.024 EUR |
| WM05P01M |
Hersteller: WAYON
WM05P01M-CYG SMD P channel transistors
WM05P01M-CYG SMD P channel transistors
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.52 EUR |
| 2400+ | 0.03 EUR |
| 12000+ | 0.02 EUR |
| WM05P02F |
![]() |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -250mA
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM05P02G |
Hersteller: WAYON
WM05P02G-CYG SMD P channel transistors
WM05P02G-CYG SMD P channel transistors
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2703+ | 0.026 EUR |
| 2858+ | 0.025 EUR |
| WM05P20M |
Hersteller: WAYON
WM05P20M-CYG SMD P channel transistors
WM05P20M-CYG SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM06DN03DE |
Hersteller: WAYON
WM06DN03DE-CYG Multi channel transistors
WM06DN03DE-CYG Multi channel transistors
auf Bestellung 2754 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 133+ | 0.54 EUR |
| 1880+ | 0.038 EUR |
| 1985+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM06N03FB |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03GE |
Hersteller: WAYON
WM06N03GE-CYG SMD N channel transistors
WM06N03GE-CYG SMD N channel transistors
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 138+ | 0.52 EUR |
| 2924+ | 0.024 EUR |
| 12000+ | 0.023 EUR |
| WM06N03HE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM06N03LE |
Hersteller: WAYON
WM06N03LE-CYG SMD N channel transistors
WM06N03LE-CYG SMD N channel transistors
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2703+ | 0.026 EUR |
| 2858+ | 0.025 EUR |
| WM06N03ME |
Hersteller: WAYON
WM06N03ME-CYG SMD N channel transistors
WM06N03ME-CYG SMD N channel transistors
auf Bestellung 2397 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 2397+ | 0.03 EUR |
| 2732+ | 0.026 EUR |
| 12000+ | 0.016 EUR |
| WM06N30M |
Hersteller: WAYON
WM06N30M-CYG SMD N channel transistors
WM06N30M-CYG SMD N channel transistors
auf Bestellung 962 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.53 EUR |
| 962+ | 0.074 EUR |
| 1229+ | 0.059 EUR |
| 12000+ | 0.035 EUR |
| WM06N30MS |
Hersteller: WAYON
WM06N30MS-CYG SMD N channel transistors
WM06N30MS-CYG SMD N channel transistors
auf Bestellung 2147 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 1725+ | 0.041 EUR |
| 1819+ | 0.039 EUR |
| WM06P17MR |
Hersteller: WAYON
WM06P17MR-CYG SMD P channel transistors
WM06P17MR-CYG SMD P channel transistors
auf Bestellung 265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 426+ | 0.17 EUR |
| 1172+ | 0.061 EUR |
| 12000+ | 0.037 EUR |
| WM10N02G |
Hersteller: WAYON
WM10N02G-CYG SMD N channel transistors
WM10N02G-CYG SMD N channel transistors
auf Bestellung 2944 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 2488+ | 0.029 EUR |
| 2646+ | 0.027 EUR |
| 12000+ | 0.026 EUR |
| WM10N02M |
Hersteller: WAYON
WM10N02M-CYG SMD N channel transistors
WM10N02M-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.54 EUR |
| 3000+ | 0.024 EUR |
| 12000+ | 0.018 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 477+ | 0.15 EUR |
| 1127+ | 0.063 EUR |
| 1608+ | 0.044 EUR |
| 1780+ | 0.04 EUR |
| WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2327 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 477+ | 0.15 EUR |
| 1127+ | 0.063 EUR |
| 1608+ | 0.044 EUR |
| 1780+ | 0.04 EUR |
| 3000+ | 0.032 EUR |
| 6000+ | 0.031 EUR |
| WM10N33M |
Hersteller: WAYON
WM10N33M-CYG SMD N channel transistors
WM10N33M-CYG SMD N channel transistors
auf Bestellung 2863 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 156+ | 0.46 EUR |
| 1645+ | 0.043 EUR |
| 1743+ | 0.041 EUR |
| 12000+ | 0.04 EUR |
| WM10N35M2 |
Hersteller: WAYON
WM10N35M2-CYG SMD N channel transistors
WM10N35M2-CYG SMD N channel transistors
auf Bestellung 2861 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 802+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| 12000+ | 0.083 EUR |
| WM10N35M3 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 311+ | 0.23 EUR |
| 521+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 782+ | 0.092 EUR |
| WM10N35M3 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2978 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 311+ | 0.23 EUR |
| 521+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 782+ | 0.092 EUR |
| 12000+ | 0.089 EUR |
| WM10P20M2 |
Hersteller: WAYON
WM10P20M2-CYG SMD P channel transistors
WM10P20M2-CYG SMD P channel transistors
auf Bestellung 2862 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 108+ | 0.67 EUR |
| 610+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| WM12N35M2 |
Hersteller: WAYON
WM12N35M2-CYG SMD N channel transistors
WM12N35M2-CYG SMD N channel transistors
auf Bestellung 2973 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.68 EUR |
| 747+ | 0.096 EUR |
| 794+ | 0.09 EUR |
| WM15P10M2 |
Hersteller: WAYON
WM15P10M2-CYG SMD P channel transistors
WM15P10M2-CYG SMD P channel transistors
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.76 EUR |
| 368+ | 0.19 EUR |
| 388+ | 0.18 EUR |
| WM4C62160A |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Gate charge: 13nC
Drain current: 8A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Gate charge: 13nC
Drain current: 8A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 268+ | 0.27 EUR |
| 325+ | 0.22 EUR |
| 368+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| WM4C62160A |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Gate charge: 13nC
Drain current: 8A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 19.5mΩ
Gate charge: 13nC
Drain current: 8A
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 268+ | 0.27 EUR |
| 325+ | 0.22 EUR |
| 368+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 3000+ | 0.17 EUR |
| WM6C61042A |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 219+ | 0.33 EUR |
| 243+ | 0.29 EUR |
| 275+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| WM6C61042A |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 219+ | 0.33 EUR |
| 243+ | 0.29 EUR |
| 275+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| WMAA2N100D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA4N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMAA6N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB007N03LG4 |
Hersteller: WAYON
WMB007N03LG4-CYG SMD N channel transistors
WMB007N03LG4-CYG SMD N channel transistors
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| 12000+ | 0.92 EUR |
| WMB009N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 66+ | 1.09 EUR |
| 68+ | 1.06 EUR |
| WMB009N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 66+ | 1.09 EUR |
| 68+ | 1.06 EUR |
| 6000+ | 0.78 EUR |
| WMB010N04LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
Case: PDFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
Case: PDFN5060-8
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 74+ | 0.98 EUR |
| 83+ | 0.87 EUR |
| WMB010N04LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
Case: PDFN5060-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
Case: PDFN5060-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 74+ | 0.98 EUR |
| 83+ | 0.87 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.78 EUR |
| 3000+ | 0.75 EUR |
| WMB014N04LG4 |
Hersteller: WAYON
WMB014N04LG4-CYG SMD N channel transistors
WMB014N04LG4-CYG SMD N channel transistors
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 64+ | 1.12 EUR |
| 12000+ | 0.68 EUR |
| WMB014N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB014N06LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 70+ | 1.03 EUR |
| 79+ | 0.92 EUR |
| 100+ | 0.85 EUR |
| WMB014N06LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 164 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 70+ | 1.03 EUR |
| 79+ | 0.92 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.82 EUR |
| 3000+ | 0.79 EUR |
| WMB017N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| WMB017N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.61 EUR |
| WMB020N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29.5nC
Pulsed drain current: 500A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29.5nC
Pulsed drain current: 500A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 100+ | 0.72 EUR |
| WMB020N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29.5nC
Pulsed drain current: 500A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 29.5nC
Pulsed drain current: 500A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.43 EUR |
| 3000+ | 0.4 EUR |
| WMB020N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 70+ | 1.02 EUR |
| WMB020N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 174A; Idm: 696A; 113.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 174A
Pulsed drain current: 696A
Power dissipation: 113.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 70+ | 1.02 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.82 EUR |
| WMB023N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 122+ | 0.59 EUR |
| 135+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| WMB023N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 198 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 122+ | 0.59 EUR |
| 135+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| 500+ | 0.44 EUR |
| 3000+ | 0.41 EUR |







