| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| WMB129N10T2 | WAYON | WMB129N10T2-CYG SMD N channel transistors |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 31W Case: PDFN5060-8 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 32A Pulsed drain current: 128A Power dissipation: 25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 65V Drain current: 32A Pulsed drain current: 128A Power dissipation: 25W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 34A Pulsed drain current: 136A Power dissipation: 27W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 34A Pulsed drain current: 136A Power dissipation: 27W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB14N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8 Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Case: PDFN5060-8 On-state resistance: 390mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB150N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Pulsed drain current: 600A Power dissipation: 96W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB175DN10LG4 | WAYON | WMB175DN10LG4-CYG Multi channel transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB175N10HG4 | WAYON | WMB175N10HG4-CYG SMD N channel transistors |
auf Bestellung 1766 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB175N10LG4 | WAYON | WMB175N10LG4-CYG SMD N channel transistors |
auf Bestellung 2490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB18N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: PDFN5060-8 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMB240P10HG4 | WAYON | WMB240P10HG4-CYG SMD P channel transistors |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB26DN06TS | WAYON | WMB26DN06TS-CYG Multi channel transistors |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB26N06TS | WAYON | WMB26N06TS-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB31430DN | WAYON | WMB31430DN-CYG Multi channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 40A Pulsed drain current: 160A Power dissipation: 108.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB340N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 40A Pulsed drain current: 160A Power dissipation: 108.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB35P04T1 | WAYON | WMB35P04T1-CYG SMD P channel transistors |
auf Bestellung 270 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB35P06TS | WAYON | WMB35P06TS-CYG SMD P channel transistors |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB40N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 160A Power dissipation: 33W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB40N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 160A Power dissipation: 33W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMB46N03T1 | WAYON | WMB46N03T1-CYG SMD N channel transistors |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB50P03TS | WAYON | WMB50P03TS-CYG SMD P channel transistors |
auf Bestellung 478 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB50P04TS | WAYON | WMB50P04TS-CYG SMD P channel transistors |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB510N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 112A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB510N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 112A Power dissipation: 80.6W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB52N03T2 | WAYON | WMB52N03T2-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB56N04T1 | WAYON | WMB56N04T1-CYG SMD N channel transistors |
auf Bestellung 463 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB58N03T1 | WAYON | WMB58N03T1-CYG SMD N channel transistors |
auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB60P02TS | WAYON | WMB60P02TS-CYG SMD P channel transistors |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB60P03TA | WAYON | WMB60P03TA-CYG SMD P channel transistors |
auf Bestellung 466 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB690N15HG2 | WAYON | WMB690N15HG2-CYG SMD N channel transistors |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB70P02TS | WAYON | WMB70P02TS-CYG SMD P channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB80N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Pulsed drain current: 320A Power dissipation: 95W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB80N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Pulsed drain current: 320A Power dissipation: 95W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB81N03T1 | WAYON | WMB81N03T1-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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WMB90N02TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Case: PDFN5060-8 Gate-source voltage: ±10V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 47W Drain current: 90A Pulsed drain current: 360A Gate charge: 42nC |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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WMB90N02TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Case: PDFN5060-8 Gate-source voltage: ±10V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 47W Drain current: 90A Pulsed drain current: 360A Gate charge: 42nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 370 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB90P03TS | WAYON | WMB90P03TS-CYG SMD P channel transistors |
auf Bestellung 297 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMB95P06TS | WAYON | WMB95P06TS-CYG SMD P channel transistors |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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WMF04N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 4.6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMF04N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 4.6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 |
auf Bestellung 2129 Stücke: Lieferzeit 14-21 Tag (e) |
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WMF04N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 4.6W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2129 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMF05N65MM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W Type of transistor: N-MOSFET Technology: WMOS™ MM Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.2A Pulsed drain current: 8.8A Power dissipation: 5W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMF07N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 42W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WMF07N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: SJMOS™ C4 |
auf Bestellung 2275 Stücke: Lieferzeit 14-21 Tag (e) |
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WMF07N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: SJMOS™ C4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2275 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMF07N70C2 | WAYON | WMF07N70C2-CYG SMD N channel transistors |
auf Bestellung 1196 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMF08N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMF08N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WMF10N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 404 Stücke: Lieferzeit 14-21 Tag (e) |
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WMF10N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 404 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMF10N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 9.6nC Pulsed drain current: 19A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WMF10N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMF10N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 Type of transistor: N-MOSFET Technology: SJMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WMG07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMG07N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO251S3 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WMB129N10T2 |
Hersteller: WAYON
WMB129N10T2-CYG SMD N channel transistors
WMB129N10T2-CYG SMD N channel transistors
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.21 EUR |
| 82+ | 0.88 EUR |
| 87+ | 0.83 EUR |
| 12000+ | 0.8 EUR |
| WMB13N65EM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 11A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB140DNV6LG4 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 145+ | 0.49 EUR |
| 162+ | 0.44 EUR |
| 183+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| WMB140DNV6LG4 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 32A; Idm: 128A; 25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 25W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 145+ | 0.49 EUR |
| 162+ | 0.44 EUR |
| 183+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| 3000+ | 0.34 EUR |
| WMB140NV6LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 204+ | 0.35 EUR |
| 249+ | 0.29 EUR |
| 280+ | 0.26 EUR |
| 500+ | 0.24 EUR |
| WMB140NV6LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 34A; Idm: 136A; 27W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 27W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 204+ | 0.35 EUR |
| 249+ | 0.29 EUR |
| 280+ | 0.26 EUR |
| 500+ | 0.24 EUR |
| 3000+ | 0.23 EUR |
| WMB14N60C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; PDFN5060-8
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Case: PDFN5060-8
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB150N03TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.89 EUR |
| WMB150N03TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; Idm: 600A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Pulsed drain current: 600A
Power dissipation: 96W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.89 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.33 EUR |
| 3000+ | 0.31 EUR |
| WMB175DN10LG4 |
Hersteller: WAYON
WMB175DN10LG4-CYG Multi channel transistors
WMB175DN10LG4-CYG Multi channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.18 EUR |
| 90+ | 0.8 EUR |
| 12000+ | 0.67 EUR |
| WMB175N10HG4 |
Hersteller: WAYON
WMB175N10HG4-CYG SMD N channel transistors
WMB175N10HG4-CYG SMD N channel transistors
auf Bestellung 1766 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 237+ | 0.3 EUR |
| 252+ | 0.28 EUR |
| WMB175N10LG4 |
Hersteller: WAYON
WMB175N10LG4-CYG SMD N channel transistors
WMB175N10LG4-CYG SMD N channel transistors
auf Bestellung 2490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 110+ | 0.65 EUR |
| 224+ | 0.32 EUR |
| 236+ | 0.3 EUR |
| 12000+ | 0.29 EUR |
| WMB18N65EM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: PDFN5060-8
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB240P10HG4 |
Hersteller: WAYON
WMB240P10HG4-CYG SMD P channel transistors
WMB240P10HG4-CYG SMD P channel transistors
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 76+ | 0.94 EUR |
| 80+ | 0.9 EUR |
| 12000+ | 0.86 EUR |
| WMB26DN06TS |
Hersteller: WAYON
WMB26DN06TS-CYG Multi channel transistors
WMB26DN06TS-CYG Multi channel transistors
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.69 EUR |
| 190+ | 0.37 EUR |
| 12000+ | 0.26 EUR |
| WMB26N06TS |
Hersteller: WAYON
WMB26N06TS-CYG SMD N channel transistors
WMB26N06TS-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.61 EUR |
| 443+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| WMB31430DN |
Hersteller: WAYON
WMB31430DN-CYG Multi channel transistors
WMB31430DN-CYG Multi channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.5 EUR |
| 67+ | 1.07 EUR |
| 72+ | 1 EUR |
| 12000+ | 0.97 EUR |
| WMB340N20HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.86 EUR |
| WMB340N20HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 40A; Idm: 160A; 108.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 108.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.86 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.67 EUR |
| 3000+ | 1.62 EUR |
| WMB35P04T1 |
Hersteller: WAYON
WMB35P04T1-CYG SMD P channel transistors
WMB35P04T1-CYG SMD P channel transistors
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 123+ | 0.58 EUR |
| 270+ | 0.27 EUR |
| 12000+ | 0.22 EUR |
| WMB35P06TS |
Hersteller: WAYON
WMB35P06TS-CYG SMD P channel transistors
WMB35P06TS-CYG SMD P channel transistors
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.85 EUR |
| 89+ | 0.8 EUR |
| 136+ | 0.53 EUR |
| 12000+ | 0.31 EUR |
| WMB40N04TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 288+ | 0.25 EUR |
| 345+ | 0.21 EUR |
| 365+ | 0.2 EUR |
| WMB40N04TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 288+ | 0.25 EUR |
| 345+ | 0.21 EUR |
| 365+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 3000+ | 0.16 EUR |
| WMB40N20JN |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; 141ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMB46N03T1 |
Hersteller: WAYON
WMB46N03T1-CYG SMD N channel transistors
WMB46N03T1-CYG SMD N channel transistors
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.58 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| WMB50P03TS |
Hersteller: WAYON
WMB50P03TS-CYG SMD P channel transistors
WMB50P03TS-CYG SMD P channel transistors
auf Bestellung 478 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 309+ | 0.23 EUR |
| 325+ | 0.22 EUR |
| 12000+ | 0.21 EUR |
| WMB50P04TS |
Hersteller: WAYON
WMB50P04TS-CYG SMD P channel transistors
WMB50P04TS-CYG SMD P channel transistors
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 240+ | 0.3 EUR |
| 253+ | 0.28 EUR |
| 12000+ | 0.27 EUR |
| WMB510N15HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 80+ | 0.89 EUR |
| WMB510N15HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 80.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 80+ | 0.89 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.59 EUR |
| 3000+ | 0.56 EUR |
| WMB52N03T2 |
Hersteller: WAYON
WMB52N03T2-CYG SMD N channel transistors
WMB52N03T2-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 296+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| 12000+ | 0.22 EUR |
| WMB56N04T1 |
Hersteller: WAYON
WMB56N04T1-CYG SMD N channel transistors
WMB56N04T1-CYG SMD N channel transistors
auf Bestellung 463 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 12000+ | 0.2 EUR |
| WMB58N03T1 |
Hersteller: WAYON
WMB58N03T1-CYG SMD N channel transistors
WMB58N03T1-CYG SMD N channel transistors
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.61 EUR |
| 439+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| WMB60P02TS |
Hersteller: WAYON
WMB60P02TS-CYG SMD P channel transistors
WMB60P02TS-CYG SMD P channel transistors
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 296+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| 12000+ | 0.22 EUR |
| WMB60P03TA |
Hersteller: WAYON
WMB60P03TA-CYG SMD P channel transistors
WMB60P03TA-CYG SMD P channel transistors
auf Bestellung 466 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.85 EUR |
| 205+ | 0.35 EUR |
| 216+ | 0.33 EUR |
| 12000+ | 0.32 EUR |
| WMB690N15HG2 |
Hersteller: WAYON
WMB690N15HG2-CYG SMD N channel transistors
WMB690N15HG2-CYG SMD N channel transistors
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 75+ | 0.96 EUR |
| 94+ | 0.76 EUR |
| 12000+ | 0.45 EUR |
| WMB70P02TS |
Hersteller: WAYON
WMB70P02TS-CYG SMD P channel transistors
WMB70P02TS-CYG SMD P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.85 EUR |
| 205+ | 0.35 EUR |
| 216+ | 0.33 EUR |
| 12000+ | 0.32 EUR |
| WMB80N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 95W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 95W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 80+ | 0.89 EUR |
| WMB80N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 95W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 95W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 95W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 80+ | 0.89 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.46 EUR |
| 3000+ | 0.43 EUR |
| WMB81N03T1 |
Hersteller: WAYON
WMB81N03T1-CYG SMD N channel transistors
WMB81N03T1-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 89+ | 0.81 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| 12000+ | 0.23 EUR |
| WMB90N02TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 47W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 47W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 42nC
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 231+ | 0.31 EUR |
| 256+ | 0.28 EUR |
| 288+ | 0.25 EUR |
| WMB90N02TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 47W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 42nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 360A; 47W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: PDFN5060-8
Gate-source voltage: ±10V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 47W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 42nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 370 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 231+ | 0.31 EUR |
| 256+ | 0.28 EUR |
| 288+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 3000+ | 0.21 EUR |
| WMB90P03TS |
Hersteller: WAYON
WMB90P03TS-CYG SMD P channel transistors
WMB90P03TS-CYG SMD P channel transistors
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 211+ | 0.34 EUR |
| 224+ | 0.32 EUR |
| 12000+ | 0.31 EUR |
| WMB95P06TS |
Hersteller: WAYON
WMB95P06TS-CYG SMD P channel transistors
WMB95P06TS-CYG SMD P channel transistors
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 66+ | 1.09 EUR |
| 12000+ | 0.65 EUR |
| WMF04N60C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMF04N65C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 2129 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 158+ | 0.45 EUR |
| 188+ | 0.38 EUR |
| 214+ | 0.33 EUR |
| 231+ | 0.31 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.27 EUR |
| WMF04N65C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 4.6W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2129 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 158+ | 0.45 EUR |
| 188+ | 0.38 EUR |
| 214+ | 0.33 EUR |
| 231+ | 0.31 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.27 EUR |
| WMF05N65MM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.8A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; 3.2A; Idm: 8.8A; 5W
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Pulsed drain current: 8.8A
Power dissipation: 5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMF07N60C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMF07N65C4 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 113+ | 0.63 EUR |
| 134+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| 166+ | 0.43 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.39 EUR |
| WMF07N65C4 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SJMOS™ C4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2275 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 113+ | 0.63 EUR |
| 134+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| 166+ | 0.43 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.39 EUR |
| WMF07N70C2 |
Hersteller: WAYON
WMF07N70C2-CYG SMD N channel transistors
WMF07N70C2-CYG SMD N channel transistors
auf Bestellung 1196 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.68 EUR |
| 204+ | 0.35 EUR |
| 216+ | 0.33 EUR |
| WMF08N60C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMF08N65C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMF10N60C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 111+ | 0.65 EUR |
| 132+ | 0.54 EUR |
| 149+ | 0.48 EUR |
| 160+ | 0.45 EUR |
| 250+ | 0.43 EUR |
| WMF10N60C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 404 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 111+ | 0.65 EUR |
| 132+ | 0.54 EUR |
| 149+ | 0.48 EUR |
| 160+ | 0.45 EUR |
| 250+ | 0.43 EUR |
| 500+ | 0.39 EUR |
| WMF10N60C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMF10N65C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; SOT223
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| WMF10N65C4 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223
Type of transistor: N-MOSFET
Technology: SJMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMG07N60C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMG07N65C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO251S3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH






