| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WM02DN70A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: TSSOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 13.5mΩ Gate charge: 8.8nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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WM02DN70A | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: TSSOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 13.5mΩ Gate charge: 8.8nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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WM02DN70M3 | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 17mΩ Gate charge: 9.6nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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WM02DN70M3 | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 17mΩ Gate charge: 9.6nC Drain current: 7A Pulsed drain current: 28A Gate-source voltage: ±10V Version: ESD Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2970 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02DP06D | WAYON | WM02DP06D-CYG Multi channel transistors |
auf Bestellung 3002 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02DP06T | WAYON | WM02DP06T-CYG Multi channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02N08FB | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.75A Pulsed drain current: 3A Power dissipation: 0.15W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM02N08G | WAYON | WM02N08G-CYG SMD N channel transistors |
auf Bestellung 2767 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02N08H | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.8A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.75A Pulsed drain current: 1.8A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±10V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM02N08L | WAYON | WM02N08L-CYG SMD N channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02N20F | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 1.76nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM02N20G | WAYON | WM02N20G-CYG SMD N channel transistors |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM02N25M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 10A; 450mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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WM02N25M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 10A; 450mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM02N28M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 10A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Pulsed drain current: 10A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 60mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) |
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WM02N28M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 10A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Pulsed drain current: 10A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 60mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1750 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02N31M | WAYON | WM02N31M-CYG SMD N channel transistors |
auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02N50M | WAYON | WM02N50M-CYG SMD N channel transistors |
auf Bestellung 2963 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02N70ME | WAYON | WM02N70ME-CYG SMD N channel transistors |
auf Bestellung 2729 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02N75M2 | WAYON | WM02N75M2-CYG SMD N channel transistors |
auf Bestellung 2854 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P06F | WAYON |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -660mA Pulsed drain current: -2.6A Power dissipation: 0.3W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 0.52Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM02P06L | WAYON | WM02P06L-CYG SMD P channel transistors |
auf Bestellung 2200 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P14G | WAYON | WM02P14G-CYG SMD P channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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WM02P160R | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W Kind of package: reel; tape Case: DFN2020-6 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Pulsed drain current: -64A Drain-source voltage: -20V Drain current: -16A Gate charge: 28nC On-state resistance: 17mΩ Power dissipation: 6.5W Gate-source voltage: ±10V |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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WM02P160R | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W Kind of package: reel; tape Case: DFN2020-6 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Pulsed drain current: -64A Drain-source voltage: -20V Drain current: -16A Gate charge: 28nC On-state resistance: 17mΩ Power dissipation: 6.5W Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 770 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P18F | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -7.2A Power dissipation: 0.7W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 2.72nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM02P20G | WAYON | WM02P20G-CYG SMD P channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P23M | WAYON | WM02P23M-CYG SMD P channel transistors |
auf Bestellung 2817 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P26M | WAYON | WM02P26M-CYG SMD P channel transistors |
auf Bestellung 870 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P30M | WAYON | WM02P30M-CYG SMD P channel transistors |
auf Bestellung 17960 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P40M3 | WAYON | WM02P40M3-CYG SMD P channel transistors |
auf Bestellung 1962 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P40ME | WAYON | WM02P40ME-CYG SMD P channel transistors |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P41M | WAYON | WM02P41M-CYG SMD P channel transistors |
auf Bestellung 2997 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P56M2 | WAYON | WM02P56M2-CYG SMD P channel transistors |
auf Bestellung 1690 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P56M3 | WAYON | WM02P56M3-CYG SMD P channel transistors |
auf Bestellung 2978 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM02P60M2 | WAYON | WM02P60M2-CYG SMD P channel transistors |
auf Bestellung 2896 Stücke: Lieferzeit 7-14 Tag (e) |
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WM03DN06D | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 1.8A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 450pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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WM03DN06D | WAYON |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 1.8A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 450pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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WM03DN85A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3390 Stücke: Lieferzeit 14-21 Tag (e) |
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WM03DN85A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3390 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03DP50A | WAYON | WM03DP50A-CYG Multi channel transistors |
auf Bestellung 2425 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N01G | WAYON | WM03N01G-CYG SMD N channel transistors |
auf Bestellung 2895 Stücke: Lieferzeit 7-14 Tag (e) |
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WM03N06M | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 2.4A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
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WM03N06M | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 2.4A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1792 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N09F | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.93A Pulsed drain current: 3.7A Power dissipation: 715mW Case: DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 0.65nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WM03N115A | WAYON | WM03N115A-CYG SMD N channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N32M | WAYON | WM03N32M-CYG SMD N channel transistors |
auf Bestellung 2464 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N57M | WAYON | WM03N57M-CYG SMD N channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N58M | WAYON | WM03N58M-CYG SMD N channel transistors |
auf Bestellung 2464 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N58M2 | WAYON | WM03N58M2-CYG SMD N channel transistors |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03N86M2 | WAYON | WM03N86M2-CYG SMD N channel transistors |
auf Bestellung 1882 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P115R | WAYON | WM03P115R-CYG SMD P channel transistors |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P27M | WAYON | WM03P27M-CYG SMD P channel transistors |
auf Bestellung 545 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P41M | WAYON | WM03P41M-CYG SMD P channel transistors |
auf Bestellung 650 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P42M | WAYON | WM03P42M-CYG SMD P channel transistors |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P42M2 | WAYON | WM03P42M2-CYG SMD P channel transistors |
auf Bestellung 2994 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P51A | WAYON | WM03P51A-CYG SMD P channel transistors |
auf Bestellung 3834 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P56M2 | WAYON | WM03P56M2-CYG SMD P channel transistors |
auf Bestellung 2649 Stücke: Lieferzeit 7-14 Tag (e) |
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| WM03P91A | WAYON | WM03P91A-CYG SMD P channel transistors |
auf Bestellung 940 Stücke: Lieferzeit 7-14 Tag (e) |
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WM04N50M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Pulsed drain current: 19A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| WM02DN70A |
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Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 350+ | 0.2 EUR |
| 435+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| 527+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| WM02DN70A |
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Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Gate charge: 8.8nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 350+ | 0.2 EUR |
| 435+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| 527+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| WM02DN70M3 |
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Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 400+ | 0.18 EUR |
| 669+ | 0.11 EUR |
| 741+ | 0.097 EUR |
| 837+ | 0.086 EUR |
| WM02DN70M3 |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Gate charge: 9.6nC
Drain current: 7A
Pulsed drain current: 28A
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 400+ | 0.18 EUR |
| 669+ | 0.11 EUR |
| 741+ | 0.097 EUR |
| 837+ | 0.086 EUR |
| 3000+ | 0.077 EUR |
| 6000+ | 0.075 EUR |
| WM02DP06D |
Hersteller: WAYON
WM02DP06D-CYG Multi channel transistors
WM02DP06D-CYG Multi channel transistors
auf Bestellung 3002 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM02DP06T |
Hersteller: WAYON
WM02DP06T-CYG Multi channel transistors
WM02DP06T-CYG Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 168+ | 0.43 EUR |
| 1185+ | 0.06 EUR |
| 1254+ | 0.057 EUR |
| 12000+ | 0.056 EUR |
| WM02N08FB |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM02N08G |
Hersteller: WAYON
WM02N08G-CYG SMD N channel transistors
WM02N08G-CYG SMD N channel transistors
auf Bestellung 2767 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2703+ | 0.026 EUR |
| 12000+ | 0.025 EUR |
| WM02N08H |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM02N08L |
Hersteller: WAYON
WM02N08L-CYG SMD N channel transistors
WM02N08L-CYG SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 2500+ | 0.029 EUR |
| 12000+ | 0.026 EUR |
| WM02N20F |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM02N20G |
Hersteller: WAYON
WM02N20G-CYG SMD N channel transistors
WM02N20G-CYG SMD N channel transistors
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 2000+ | 0.036 EUR |
| 12000+ | 0.026 EUR |
| WM02N25M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 10A; 450mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 10A; 450mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 404+ | 0.18 EUR |
| 1202+ | 0.059 EUR |
| 2874+ | 0.025 EUR |
| 3000+ | 0.024 EUR |
| WM02N25M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 10A; 450mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 10A; 450mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 404+ | 0.18 EUR |
| 1202+ | 0.059 EUR |
| 2874+ | 0.025 EUR |
| 3000+ | 0.024 EUR |
| 6000+ | 0.017 EUR |
| WM02N28M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 10A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 10A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 10A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 10A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 455+ | 0.16 EUR |
| 1000+ | 0.072 EUR |
| 1750+ | 0.041 EUR |
| WM02N28M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 10A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 10A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; Idm: 10A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Pulsed drain current: 10A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1750 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 455+ | 0.16 EUR |
| 1000+ | 0.072 EUR |
| 1750+ | 0.041 EUR |
| 3000+ | 0.024 EUR |
| 6000+ | 0.021 EUR |
| WM02N31M |
Hersteller: WAYON
WM02N31M-CYG SMD N channel transistors
WM02N31M-CYG SMD N channel transistors
auf Bestellung 2995 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 2526+ | 0.028 EUR |
| 2674+ | 0.027 EUR |
| 12000+ | 0.026 EUR |
| WM02N50M |
Hersteller: WAYON
WM02N50M-CYG SMD N channel transistors
WM02N50M-CYG SMD N channel transistors
auf Bestellung 2963 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 2101+ | 0.034 EUR |
| 2223+ | 0.032 EUR |
| WM02N70ME |
Hersteller: WAYON
WM02N70ME-CYG SMD N channel transistors
WM02N70ME-CYG SMD N channel transistors
auf Bestellung 2729 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 133+ | 0.54 EUR |
| 1880+ | 0.038 EUR |
| 1985+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM02N75M2 |
Hersteller: WAYON
WM02N75M2-CYG SMD N channel transistors
WM02N75M2-CYG SMD N channel transistors
auf Bestellung 2854 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 149+ | 0.48 EUR |
| 1053+ | 0.068 EUR |
| 1114+ | 0.064 EUR |
| 12000+ | 0.063 EUR |
| WM02P06F |
![]() |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.6A
Power dissipation: 0.3W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -660mA; Idm: -2.6A; 300mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.6A
Power dissipation: 0.3W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM02P06L |
Hersteller: WAYON
WM02P06L-CYG SMD P channel transistors
WM02P06L-CYG SMD P channel transistors
auf Bestellung 2200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 2200+ | 0.033 EUR |
| 12000+ | 0.026 EUR |
| WM02P14G |
Hersteller: WAYON
WM02P14G-CYG SMD P channel transistors
WM02P14G-CYG SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 0.45 EUR |
| 2370+ | 0.03 EUR |
| 2500+ | 0.029 EUR |
| 12000+ | 0.028 EUR |
| WM02P160R |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 313+ | 0.23 EUR |
| 391+ | 0.18 EUR |
| 414+ | 0.17 EUR |
| 532+ | 0.13 EUR |
| WM02P160R |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Kind of package: reel; tape
Case: DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -64A
Drain-source voltage: -20V
Drain current: -16A
Gate charge: 28nC
On-state resistance: 17mΩ
Power dissipation: 6.5W
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 770 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 313+ | 0.23 EUR |
| 391+ | 0.18 EUR |
| 414+ | 0.17 EUR |
| 532+ | 0.13 EUR |
| WM02P18F |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -7.2A
Power dissipation: 0.7W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 2.72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -7.2A; 700mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -7.2A
Power dissipation: 0.7W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 2.72nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM02P20G |
Hersteller: WAYON
WM02P20G-CYG SMD P channel transistors
WM02P20G-CYG SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 147+ | 0.49 EUR |
| 2084+ | 0.034 EUR |
| 2203+ | 0.032 EUR |
| WM02P23M |
Hersteller: WAYON
WM02P23M-CYG SMD P channel transistors
WM02P23M-CYG SMD P channel transistors
auf Bestellung 2817 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.48 EUR |
| 2817+ | 0.026 EUR |
| 12000+ | 0.021 EUR |
| WM02P26M |
Hersteller: WAYON
WM02P26M-CYG SMD P channel transistors
WM02P26M-CYG SMD P channel transistors
auf Bestellung 870 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 138+ | 0.52 EUR |
| 870+ | 0.082 EUR |
| 1890+ | 0.037 EUR |
| 12000+ | 0.023 EUR |
| WM02P30M |
Hersteller: WAYON
WM02P30M-CYG SMD P channel transistors
WM02P30M-CYG SMD P channel transistors
auf Bestellung 17960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 0.47 EUR |
| 2243+ | 0.032 EUR |
| 2370+ | 0.03 EUR |
| WM02P40M3 |
Hersteller: WAYON
WM02P40M3-CYG SMD P channel transistors
WM02P40M3-CYG SMD P channel transistors
auf Bestellung 1962 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 149+ | 0.48 EUR |
| 1578+ | 0.045 EUR |
| 1673+ | 0.043 EUR |
| 12000+ | 0.042 EUR |
| WM02P40ME |
Hersteller: WAYON
WM02P40ME-CYG SMD P channel transistors
WM02P40ME-CYG SMD P channel transistors
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.53 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM02P41M |
Hersteller: WAYON
WM02P41M-CYG SMD P channel transistors
WM02P41M-CYG SMD P channel transistors
auf Bestellung 2997 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 2101+ | 0.034 EUR |
| 2223+ | 0.032 EUR |
| WM02P56M2 |
Hersteller: WAYON
WM02P56M2-CYG SMD P channel transistors
WM02P56M2-CYG SMD P channel transistors
auf Bestellung 1690 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 1263+ | 0.057 EUR |
| 1337+ | 0.053 EUR |
| WM02P56M3 |
Hersteller: WAYON
WM02P56M3-CYG SMD P channel transistors
WM02P56M3-CYG SMD P channel transistors
auf Bestellung 2978 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 1147+ | 0.062 EUR |
| 1214+ | 0.059 EUR |
| 12000+ | 0.058 EUR |
| WM02P60M2 |
Hersteller: WAYON
WM02P60M2-CYG SMD P channel transistors
WM02P60M2-CYG SMD P channel transistors
auf Bestellung 2896 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 142+ | 0.51 EUR |
| 997+ | 0.072 EUR |
| 1055+ | 0.068 EUR |
| 12000+ | 0.067 EUR |
| WM03DN06D |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 521+ | 0.14 EUR |
| 1250+ | 0.057 EUR |
| 1393+ | 0.051 EUR |
| 1583+ | 0.045 EUR |
| WM03DN06D |
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Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 600mA; Idm: 1.8A; 300mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 1.8A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 450pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 521+ | 0.14 EUR |
| 1250+ | 0.057 EUR |
| 1393+ | 0.051 EUR |
| 1583+ | 0.045 EUR |
| 3000+ | 0.041 EUR |
| 6000+ | 0.039 EUR |
| WM03DN85A |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3390 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 421+ | 0.17 EUR |
| 599+ | 0.12 EUR |
| 663+ | 0.11 EUR |
| 752+ | 0.095 EUR |
| 2000+ | 0.086 EUR |
| WM03DN85A |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3390 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 421+ | 0.17 EUR |
| 599+ | 0.12 EUR |
| 663+ | 0.11 EUR |
| 752+ | 0.095 EUR |
| 2000+ | 0.086 EUR |
| 4000+ | 0.082 EUR |
| WM03DP50A |
Hersteller: WAYON
WM03DP50A-CYG Multi channel transistors
WM03DP50A-CYG Multi channel transistors
auf Bestellung 2425 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 861+ | 0.083 EUR |
| 911+ | 0.079 EUR |
| 8000+ | 0.077 EUR |
| WM03N01G |
Hersteller: WAYON
WM03N01G-CYG SMD N channel transistors
WM03N01G-CYG SMD N channel transistors
auf Bestellung 2895 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 153+ | 0.47 EUR |
| 2703+ | 0.026 EUR |
| 2858+ | 0.025 EUR |
| WM03N06M |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1792 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 368+ | 0.19 EUR |
| 1097+ | 0.065 EUR |
| 1792+ | 0.04 EUR |
| WM03N06M |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; Idm: 2.4A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 2.4A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1792 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 368+ | 0.19 EUR |
| 1097+ | 0.065 EUR |
| 1792+ | 0.04 EUR |
| 3000+ | 0.024 EUR |
| 6000+ | 0.019 EUR |
| WM03N09F |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.93A
Pulsed drain current: 3.7A
Power dissipation: 715mW
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 930mA; Idm: 3.7A; 715mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.93A
Pulsed drain current: 3.7A
Power dissipation: 715mW
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WM03N115A |
Hersteller: WAYON
WM03N115A-CYG SMD N channel transistors
WM03N115A-CYG SMD N channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.68 EUR |
| 527+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| WM03N32M |
Hersteller: WAYON
WM03N32M-CYG SMD N channel transistors
WM03N32M-CYG SMD N channel transistors
auf Bestellung 2464 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 0.45 EUR |
| 2370+ | 0.03 EUR |
| 2464+ | 0.029 EUR |
| 12000+ | 0.028 EUR |
| WM03N57M |
Hersteller: WAYON
WM03N57M-CYG SMD N channel transistors
WM03N57M-CYG SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 108+ | 0.66 EUR |
| 1520+ | 0.047 EUR |
| 1608+ | 0.044 EUR |
| WM03N58M |
Hersteller: WAYON
WM03N58M-CYG SMD N channel transistors
WM03N58M-CYG SMD N channel transistors
auf Bestellung 2464 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.53 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM03N58M2 |
Hersteller: WAYON
WM03N58M2-CYG SMD N channel transistors
WM03N58M2-CYG SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| WM03N86M2 |
Hersteller: WAYON
WM03N86M2-CYG SMD N channel transistors
WM03N86M2-CYG SMD N channel transistors
auf Bestellung 1882 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 177+ | 0.4 EUR |
| 1263+ | 0.057 EUR |
| 1337+ | 0.053 EUR |
| WM03P115R |
Hersteller: WAYON
WM03P115R-CYG SMD P channel transistors
WM03P115R-CYG SMD P channel transistors
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 116+ | 0.62 EUR |
| 575+ | 0.12 EUR |
| WM03P27M |
Hersteller: WAYON
WM03P27M-CYG SMD P channel transistors
WM03P27M-CYG SMD P channel transistors
auf Bestellung 545 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 0.42 EUR |
| 596+ | 0.12 EUR |
| 1640+ | 0.043 EUR |
| 12000+ | 0.026 EUR |
| WM03P41M |
Hersteller: WAYON
WM03P41M-CYG SMD P channel transistors
WM03P41M-CYG SMD P channel transistors
auf Bestellung 650 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 650+ | 0.11 EUR |
| 1366+ | 0.053 EUR |
| 12000+ | 0.032 EUR |
| WM03P42M |
Hersteller: WAYON
WM03P42M-CYG SMD P channel transistors
WM03P42M-CYG SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.48 EUR |
| 2101+ | 0.034 EUR |
| 2223+ | 0.032 EUR |
| WM03P42M2 |
Hersteller: WAYON
WM03P42M2-CYG SMD P channel transistors
WM03P42M2-CYG SMD P channel transistors
auf Bestellung 2994 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 134+ | 0.53 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| 12000+ | 0.035 EUR |
| WM03P51A |
Hersteller: WAYON
WM03P51A-CYG SMD P channel transistors
WM03P51A-CYG SMD P channel transistors
auf Bestellung 3834 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 1223+ | 0.058 EUR |
| 1292+ | 0.055 EUR |
| WM03P56M2 |
Hersteller: WAYON
WM03P56M2-CYG SMD P channel transistors
WM03P56M2-CYG SMD P channel transistors
auf Bestellung 2649 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 1263+ | 0.057 EUR |
| 1337+ | 0.053 EUR |
| WM03P91A |
Hersteller: WAYON
WM03P91A-CYG SMD P channel transistors
WM03P91A-CYG SMD P channel transistors
auf Bestellung 940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 110+ | 0.65 EUR |
| 544+ | 0.13 EUR |
| 575+ | 0.12 EUR |
| WM04N50M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 19A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 19A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 400+ | 0.18 EUR |
| 940+ | 0.076 EUR |
| 1341+ | 0.053 EUR |
| 1484+ | 0.048 EUR |
| 3000+ | 0.038 EUR |






