Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MPR392105FR003 | WAYON | MPR392105FR003 SMD resistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR392105FR004 | WAYON | MPR392105FR004 SMD resistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR392105FR005 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 3921; 5mΩ; 5W; ±1%; -55÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 3921 Resistance: 5mΩ Power: 5W Tolerance: ±1% Operating temperature: -55...170°C Width: 5.2mm Height: 0.5mm Length: 10mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR392105FR005 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 3921; 5mΩ; 5W; ±1%; -55÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 3921 Resistance: 5mΩ Power: 5W Tolerance: ±1% Operating temperature: -55...170°C Width: 5.2mm Height: 0.5mm Length: 10mm Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR392106FR002 | WAYON | MPR392106FR002 SMD resistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
MPR392108FR001 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 3921; 1mΩ; 8W; ±1%; -55÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 3921 Resistance: 1mΩ Power: 8W Tolerance: ±1% Operating temperature: -55...170°C Width: 5.2mm Height: 0.5mm Length: 10mm |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
MPR392108FR001 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 3921; 1mΩ; 8W; ±1%; -55÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 3921 Resistance: 1mΩ Power: 8W Tolerance: ±1% Operating temperature: -55...170°C Width: 5.2mm Height: 0.5mm Length: 10mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 936 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
MPR392109F0M50 | WAYON | MPR392109F0M50 SMD resistors |
auf Bestellung 940 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
MPR392110F0M30 | WAYON | MPR392110F0M30 SMD resistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR392112F0M20 | WAYON | MPR392112F0M20 SMD resistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593107FR002 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C Operating temperature: -55...170°C Type of resistor: metal strip Power: 7W Resistance: 2mΩ Tolerance: ±1% Width: 7.7mm Height: 0.5mm Length: 15mm Kind of resistor: sensing Case - inch: 5931 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593107FR002 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C Operating temperature: -55...170°C Type of resistor: metal strip Power: 7W Resistance: 2mΩ Tolerance: ±1% Width: 7.7mm Height: 0.5mm Length: 15mm Kind of resistor: sensing Case - inch: 5931 Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593107FR003 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C Operating temperature: -55...170°C Type of resistor: metal strip Power: 7W Resistance: 3mΩ Tolerance: ±1% Width: 7.7mm Height: 0.5mm Length: 15mm Kind of resistor: sensing Case - inch: 5931 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593107FR003 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C Operating temperature: -55...170°C Type of resistor: metal strip Power: 7W Resistance: 3mΩ Tolerance: ±1% Width: 7.7mm Height: 0.5mm Length: 15mm Kind of resistor: sensing Case - inch: 5931 Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593108F0M50 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C Operating temperature: -55...170°C Type of resistor: metal strip Power: 8W Resistance: 0.5mΩ Tolerance: ±1% Width: 7.7mm Height: 0.5mm Length: 15mm Kind of resistor: sensing Case - inch: 5931 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593108F0M50 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C Operating temperature: -55...170°C Type of resistor: metal strip Power: 8W Resistance: 0.5mΩ Tolerance: ±1% Width: 7.7mm Height: 0.5mm Length: 15mm Kind of resistor: sensing Case - inch: 5931 Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593110FR001 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 1mΩ; 10W; ±1%; -55÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 5931 Resistance: 1mΩ Power: 10W Tolerance: ±1% Operating temperature: -55...170°C Width: 7.7mm Height: 0.5mm Length: 15mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593110FR001 | WAYON |
![]() Description: Resistor: metal strip; sensing; SMD; 5931; 1mΩ; 10W; ±1%; -55÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 5931 Resistance: 1mΩ Power: 10W Tolerance: ±1% Operating temperature: -55...170°C Width: 7.7mm Height: 0.5mm Length: 15mm Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593115F0M10 | WAYON | MPR593115F0M10 SMD resistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
MPR593115F0M20 | WAYON | MPR593115F0M20 SMD resistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TE P0050150.00j5 | WAYON |
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5 Anzahl je Verpackung: 32 Stücke |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
WM02DH08D | WAYON |
![]() Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 750/-660mA Power dissipation: 0.2W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 380/520mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 1/2.2nC |
auf Bestellung 2942 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN080C | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel Semiconductor structure: common drain On-state resistance: 15.5mΩ Version: ESD Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 49A Drain-source voltage: 20V Drain current: 8A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN085C | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel Semiconductor structure: common drain On-state resistance: 10.9mΩ Version: ESD Gate charge: 22.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 56A Drain-source voltage: 20V Drain current: 8.5A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN08D | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.25Ω Version: ESD Gate charge: 1.1nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 3A Drain-source voltage: 20V Drain current: 0.8A |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN08T | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SOT563 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.25Ω Version: ESD Gate charge: 1.1nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 3A Drain-source voltage: 20V Drain current: 0.8A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN095C | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel Semiconductor structure: common drain On-state resistance: 9.4mΩ Version: ESD Gate charge: 22nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 9.5A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN110C | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.56W Case: DFN2030-6 Mounting: SMD Kind of package: reel Semiconductor structure: common drain On-state resistance: 7.5mΩ Version: ESD Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 70A Drain-source voltage: 20V Drain current: 11A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN48A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.25W Case: SOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 30mΩ Gate charge: 10nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 30A Drain-source voltage: 20V Drain current: 4.8A |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN50M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common drain On-state resistance: 27mΩ Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 20V Drain current: 5A |
auf Bestellung 2897 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN560Q | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 31W Case: DFN3030-8 Mounting: SMD Kind of package: reel Semiconductor structure: common drain On-state resistance: 5.4mΩ Version: ESD Gate charge: 27.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 100A Drain-source voltage: 20V Drain current: 56A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN60M3 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common drain On-state resistance: 20mΩ Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 25A Drain-source voltage: 20V Drain current: 6A |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN70A | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common drain On-state resistance: 13.5mΩ Version: ESD Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 28A Drain-source voltage: 20V Drain current: 7A |
auf Bestellung 3405 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02DN70M3 | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: SOT23-6 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common drain On-state resistance: 17mΩ Version: ESD Gate charge: 9.6nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 28A Drain-source voltage: 20V Drain current: 7A |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02N31M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.1A Pulsed drain current: 12.4A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02P40M3 | WAYON |
![]() Description: Transistor: P-MOSFET; unipolar; SOT23-6; ESD Case: SOT23-6 Mounting: SMD Kind of package: tape Type of transistor: P-MOSFET Polarisation: unipolar Version: ESD Kind of channel: enhancement |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM02P56M3 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT23-6 Case: SOT23-6 Mounting: SMD Kind of package: tape Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM03DN85A | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
WM06N03FB | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.36W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
WM06N03FE | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
WM06N03GE | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM06N03HE | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
WM06N03LE | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM06N03ME | WAYON |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM10N02G | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT323 Mounting: SMD Kind of package: tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM10N02M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM10N20M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.3nC |
auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM10N33M | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Pulsed drain current: 13.2A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4nC |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM10N35M2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhancement |
auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM10N35M3 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC |
auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM10P20M2 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2A Pulsed drain current: -8A Power dissipation: 2.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC |
auf Bestellung 2998 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM12N35M2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT23 Mounting: SMD Kind of package: tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WM4C62160A | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.7W Case: CSP1515-4 Mounting: SMD Kind of package: reel Semiconductor structure: common drain On-state resistance: 19.5mΩ Version: ESD Gate charge: 13nC Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 8A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() +1 |
WM6C61042A | WAYON |
![]() Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 8A Power dissipation: 0.45W Case: CSP6 Gate-source voltage: ±10V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel Kind of channel: enhancement Semiconductor structure: common drain Version: ESD |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
WMAA2N100D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Pulsed drain current: 8A Power dissipation: 60W Case: TO251 Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
WMAA4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
WMAA4N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 156W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 24.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
WMAA4N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
WMAA6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
WMB009N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 200A Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
|
MPR392105FR003 |
Hersteller: WAYON
MPR392105FR003 SMD resistors
MPR392105FR003 SMD resistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR392105FR004 |
Hersteller: WAYON
MPR392105FR004 SMD resistors
MPR392105FR004 SMD resistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR392105FR005 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 5mΩ; 5W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 5mΩ
Power: 5W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 5mΩ; 5W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 5mΩ
Power: 5W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR392105FR005 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 5mΩ; 5W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 5mΩ
Power: 5W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
Anzahl je Verpackung: 3000 Stücke
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 5mΩ; 5W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 5mΩ
Power: 5W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR392106FR002 |
Hersteller: WAYON
MPR392106FR002 SMD resistors
MPR392106FR002 SMD resistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR392108FR001 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 1mΩ; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 1mΩ
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 1mΩ; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 1mΩ
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.32 EUR |
115+ | 0.62 EUR |
160+ | 0.45 EUR |
MPR392108FR001 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 1mΩ; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 1mΩ
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
Anzahl je Verpackung: 1 Stücke
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 3921; 1mΩ; 8W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 3921
Resistance: 1mΩ
Power: 8W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 5.2mm
Height: 0.5mm
Length: 10mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 936 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.32 EUR |
115+ | 0.62 EUR |
160+ | 0.45 EUR |
1000+ | 0.39 EUR |
3000+ | 0.36 EUR |
MPR392109F0M50 |
Hersteller: WAYON
MPR392109F0M50 SMD resistors
MPR392109F0M50 SMD resistors
auf Bestellung 940 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.51 EUR |
192+ | 0.37 EUR |
203+ | 0.35 EUR |
MPR392110F0M30 |
Hersteller: WAYON
MPR392110F0M30 SMD resistors
MPR392110F0M30 SMD resistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR392112F0M20 |
Hersteller: WAYON
MPR392112F0M20 SMD resistors
MPR392112F0M20 SMD resistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593107FR002 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 2mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 2mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593107FR002 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 2mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 2mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 2mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593107FR003 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 3mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 3mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593107FR003 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 3mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 3mΩ; 7W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 7W
Resistance: 3mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593108F0M50 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 8W
Resistance: 0.5mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 8W
Resistance: 0.5mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593108F0M50 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 8W
Resistance: 0.5mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 500uΩ; 8W; ±1%; -55÷170°C
Operating temperature: -55...170°C
Type of resistor: metal strip
Power: 8W
Resistance: 0.5mΩ
Tolerance: ±1%
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Kind of resistor: sensing
Case - inch: 5931
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593110FR001 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 1mΩ; 10W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Resistance: 1mΩ
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 1mΩ; 10W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Resistance: 1mΩ
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593110FR001 |
![]() |
Hersteller: WAYON
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 1mΩ; 10W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Resistance: 1mΩ
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Anzahl je Verpackung: 2000 Stücke
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 5931; 1mΩ; 10W; ±1%; -55÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 5931
Resistance: 1mΩ
Power: 10W
Tolerance: ±1%
Operating temperature: -55...170°C
Width: 7.7mm
Height: 0.5mm
Length: 15mm
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593115F0M10 |
Hersteller: WAYON
MPR593115F0M10 SMD resistors
MPR593115F0M10 SMD resistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MPR593115F0M20 |
Hersteller: WAYON
MPR593115F0M20 SMD resistors
MPR593115F0M20 SMD resistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TE P0050150.00j5 |
Hersteller: WAYON
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm; Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 210 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
64+ | 0.67 EUR |
WM02DH08D |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 1/2.2nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 1/2.2nC
auf Bestellung 2942 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
544+ | 0.13 EUR |
1303+ | 0.06 EUR |
1441+ | 0.05 EUR |
1812+ | 0.04 EUR |
1916+ | 0.04 EUR |
WM02DN080C |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 15.5mΩ
Version: ESD
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 49A
Drain-source voltage: 20V
Drain current: 8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 15.5mΩ
Version: ESD
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 49A
Drain-source voltage: 20V
Drain current: 8A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
247+ | 0.29 EUR |
296+ | 0.24 EUR |
385+ | 0.19 EUR |
407+ | 0.18 EUR |
WM02DN085C |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 10.9mΩ
Version: ESD
Gate charge: 22.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 56A
Drain-source voltage: 20V
Drain current: 8.5A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 10.9mΩ
Version: ESD
Gate charge: 22.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 56A
Drain-source voltage: 20V
Drain current: 8.5A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
247+ | 0.29 EUR |
296+ | 0.24 EUR |
385+ | 0.19 EUR |
407+ | 0.18 EUR |
WM02DN08D |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Version: ESD
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Drain-source voltage: 20V
Drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Version: ESD
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Drain-source voltage: 20V
Drain current: 0.8A
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
562+ | 0.13 EUR |
1330+ | 0.05 EUR |
1480+ | 0.05 EUR |
1819+ | 0.04 EUR |
1924+ | 0.04 EUR |
WM02DN08T |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Version: ESD
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Drain-source voltage: 20V
Drain current: 0.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Version: ESD
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 3A
Drain-source voltage: 20V
Drain current: 0.8A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
521+ | 0.14 EUR |
875+ | 0.08 EUR |
969+ | 0.07 EUR |
1194+ | 0.06 EUR |
1263+ | 0.06 EUR |
WM02DN095C |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 9.4mΩ
Version: ESD
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 9.5A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 9.4mΩ
Version: ESD
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 60A
Drain-source voltage: 20V
Drain current: 9.5A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
205+ | 0.35 EUR |
246+ | 0.29 EUR |
321+ | 0.22 EUR |
338+ | 0.21 EUR |
WM02DN110C |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 7.5mΩ
Version: ESD
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 70A
Drain-source voltage: 20V
Drain current: 11A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 7.5mΩ
Version: ESD
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 70A
Drain-source voltage: 20V
Drain current: 11A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
230+ | 0.31 EUR |
280+ | 0.26 EUR |
345+ | 0.21 EUR |
363+ | 0.20 EUR |
WM02DN48A |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Gate charge: 10nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 4.8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Gate charge: 10nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 20V
Drain current: 4.8A
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.50 EUR |
407+ | 0.18 EUR |
680+ | 0.11 EUR |
757+ | 0.10 EUR |
858+ | 0.08 EUR |
908+ | 0.08 EUR |
2000+ | 0.08 EUR |
WM02DN50M3 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 27mΩ
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 5A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 27mΩ
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 5A
auf Bestellung 2897 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
562+ | 0.13 EUR |
1330+ | 0.05 EUR |
1480+ | 0.05 EUR |
1819+ | 0.04 EUR |
1924+ | 0.04 EUR |
WM02DN560Q |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 5.4mΩ
Version: ESD
Gate charge: 27.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 100A
Drain-source voltage: 20V
Drain current: 56A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 5.4mΩ
Version: ESD
Gate charge: 27.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 100A
Drain-source voltage: 20V
Drain current: 56A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
141+ | 0.51 EUR |
157+ | 0.46 EUR |
192+ | 0.37 EUR |
204+ | 0.35 EUR |
WM02DN60M3 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 20mΩ
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 20mΩ
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 20V
Drain current: 6A
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
432+ | 0.17 EUR |
723+ | 0.10 EUR |
806+ | 0.09 EUR |
991+ | 0.07 EUR |
1049+ | 0.07 EUR |
WM02DN70A |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 13.5mΩ
Version: ESD
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 7A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 13.5mΩ
Version: ESD
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 7A
auf Bestellung 3405 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.60 EUR |
336+ | 0.21 EUR |
421+ | 0.17 EUR |
447+ | 0.16 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
WM02DN70M3 |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 17mΩ
Version: ESD
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 7A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
On-state resistance: 17mΩ
Version: ESD
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 7A
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
385+ | 0.19 EUR |
642+ | 0.11 EUR |
715+ | 0.10 EUR |
878+ | 0.08 EUR |
928+ | 0.08 EUR |
WM02N31M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.40 EUR |
544+ | 0.13 EUR |
1263+ | 0.06 EUR |
1819+ | 0.04 EUR |
2017+ | 0.04 EUR |
2526+ | 0.03 EUR |
2674+ | 0.03 EUR |
WM02P40M3 |
![]() |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23-6; ESD
Case: SOT23-6
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23-6; ESD
Case: SOT23-6
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
468+ | 0.15 EUR |
1117+ | 0.06 EUR |
1241+ | 0.06 EUR |
1558+ | 0.05 EUR |
1645+ | 0.04 EUR |
WM02P56M3 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23-6
Case: SOT23-6
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT23-6
Case: SOT23-6
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
486+ | 0.15 EUR |
812+ | 0.09 EUR |
903+ | 0.08 EUR |
1132+ | 0.06 EUR |
1197+ | 0.06 EUR |
WM03DN85A |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.5A; Idm: 34A; 2.5W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
407+ | 0.18 EUR |
575+ | 0.12 EUR |
642+ | 0.11 EUR |
794+ | 0.09 EUR |
848+ | 0.08 EUR |
WM06N03FB |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WM06N03FE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WM06N03GE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.50 EUR |
397+ | 0.18 EUR |
869+ | 0.08 EUR |
2067+ | 0.04 EUR |
2294+ | 0.03 EUR |
2924+ | 0.02 EUR |
WM06N03HE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WM06N03LE |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
368+ | 0.19 EUR |
807+ | 0.09 EUR |
1924+ | 0.04 EUR |
2137+ | 0.03 EUR |
2733+ | 0.03 EUR |
2891+ | 0.03 EUR |
WM06N03ME |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
417+ | 0.17 EUR |
1250+ | 0.06 EUR |
2400+ | 0.03 EUR |
WM10N02G |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT323
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT323
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
363+ | 0.20 EUR |
797+ | 0.09 EUR |
1902+ | 0.04 EUR |
2110+ | 0.03 EUR |
2464+ | 0.03 EUR |
2618+ | 0.03 EUR |
WM10N02M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
374+ | 0.19 EUR |
1117+ | 0.06 EUR |
2660+ | 0.03 EUR |
2959+ | 0.02 EUR |
WM10N20M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
455+ | 0.16 EUR |
1060+ | 0.07 EUR |
1511+ | 0.05 EUR |
2075+ | 0.03 EUR |
2193+ | 0.03 EUR |
WM10N33M |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
496+ | 0.14 EUR |
1180+ | 0.06 EUR |
1316+ | 0.05 EUR |
1624+ | 0.04 EUR |
1719+ | 0.04 EUR |
WM10N35M2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.60 EUR |
341+ | 0.21 EUR |
564+ | 0.13 EUR |
629+ | 0.11 EUR |
793+ | 0.09 EUR |
839+ | 0.09 EUR |
WM10N35M3 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
329+ | 0.22 EUR |
544+ | 0.13 EUR |
612+ | 0.12 EUR |
750+ | 0.10 EUR |
794+ | 0.09 EUR |
WM10P20M2 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -8A; 2.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 2.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
307+ | 0.23 EUR |
435+ | 0.16 EUR |
486+ | 0.15 EUR |
603+ | 0.12 EUR |
633+ | 0.11 EUR |
WM12N35M2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
323+ | 0.22 EUR |
537+ | 0.13 EUR |
601+ | 0.12 EUR |
750+ | 0.10 EUR |
793+ | 0.09 EUR |
WM4C62160A |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 19.5mΩ
Version: ESD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 8A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: CSP1515-4
Mounting: SMD
Kind of package: reel
Semiconductor structure: common drain
On-state resistance: 19.5mΩ
Version: ESD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 8A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
260+ | 0.28 EUR |
317+ | 0.23 EUR |
391+ | 0.18 EUR |
414+ | 0.17 EUR |
WM6C61042A |
![]() |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 8A; 450mW; CSP6; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8A
Power dissipation: 0.45W
Case: CSP6
Gate-source voltage: ±10V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Semiconductor structure: common drain
Version: ESD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
215+ | 0.33 EUR |
239+ | 0.30 EUR |
295+ | 0.24 EUR |
311+ | 0.23 EUR |
WMAA2N100D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
143+ | 0.50 EUR |
178+ | 0.40 EUR |
238+ | 0.30 EUR |
WMAA4N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 14.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMAA4N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMAA4N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMAA6N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
WMB009N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
66+ | 1.09 EUR |
83+ | 0.86 EUR |
88+ | 0.82 EUR |