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T1635H-800NL WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T2050H-800K WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Case: TO220-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T2535H-800A WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T2535H-800AY WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T3035H-800A WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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T4050H-800EA WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube; Ifsm: 400A
Mounting: THT
Features of semiconductor devices: high temperature
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Case: TO3PF
Produkt ist nicht verfügbar
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T435H-800AM WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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T435H-800L WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 40A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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T835H-800A WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T835H-800AM WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T835H-800K WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 80A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220-3
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T835H-800L WAYON Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 80A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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TE P0050150.00j5 WAYON 265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm;   Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
64+0.69 EUR
Mindestbestellmenge: 64
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WM01P41M WM01P41M WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.1A; Idm: 15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.1A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
443+0.16 EUR
1034+0.069 EUR
1484+0.048 EUR
1651+0.043 EUR
Mindestbestellmenge: 152
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WM02DH08D WM02DH08D WAYON WM02DH08D.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4527 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
556+0.13 EUR
1330+0.054 EUR
1475+0.048 EUR
1667+0.043 EUR
3000+0.038 EUR
Mindestbestellmenge: 186
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WM02DN080C WM02DN080C WAYON WM02DN080C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Drain current: 8A
Pulsed drain current: 49A
Gate charge: 11nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 103
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WM02DN085C WM02DN085C WAYON WM02DN085C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Drain current: 8.5A
Pulsed drain current: 56A
Gate charge: 22.1nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
500+0.19 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN08D WM02DN08D WAYON WM02DN08D.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 0.8A
Pulsed drain current: 3A
Gate charge: 1.1nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1589+0.044 EUR
Mindestbestellmenge: 186
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WM02DN08T WM02DN08T WAYON WM02DN08T.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.27W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
521+0.14 EUR
869+0.082 EUR
968+0.074 EUR
1097+0.065 EUR
Mindestbestellmenge: 186
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WM02DN095C WM02DN095C WAYON WM02DN095C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Drain current: 9.5A
Pulsed drain current: 60A
Gate charge: 22nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
207+0.35 EUR
248+0.29 EUR
262+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN110C WM02DN110C WAYON WM02DN110C.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Drain current: 11A
Pulsed drain current: 70A
Gate charge: 23nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
231+0.31 EUR
281+0.25 EUR
317+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 132
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WM02DN48A WM02DN48A WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Drain current: 4.8A
Pulsed drain current: 30A
Gate charge: 10nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2973 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
939+0.076 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN50M3 WM02DN50M3 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Drain current: 5A
Pulsed drain current: 20A
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1673+0.043 EUR
Mindestbestellmenge: 186
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WM02DN560Q WM02DN560Q WAYON WM02DN560Q.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Drain current: 56A
Pulsed drain current: 100A
Gate charge: 27.8nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
142+0.51 EUR
158+0.45 EUR
178+0.4 EUR
Mindestbestellmenge: 85
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WM02DN60M3 WM02DN60M3 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Drain current: 6A
Pulsed drain current: 25A
Gate charge: 12nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
944+0.076 EUR
Mindestbestellmenge: 157
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WM02DN70A WM02DN70A WAYON WM02DN70A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 8.8nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
334+0.21 EUR
417+0.17 EUR
443+0.16 EUR
506+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 122
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WM02DN70M3 WM02DN70M3 WAYON WM02DN70M3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 9.6nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
388+0.18 EUR
642+0.11 EUR
716+0.1 EUR
808+0.089 EUR
Mindestbestellmenge: 136
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WM02DP06T WM02DP06T WAYON WM02DP06T.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
521+0.14 EUR
875+0.082 EUR
971+0.074 EUR
1102+0.065 EUR
3000+0.058 EUR
Mindestbestellmenge: 186
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WM02N08FB WAYON WM02N08FB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM02N20F WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WM02N20G WM02N20G WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
516+0.14 EUR
1202+0.059 EUR
1725+0.041 EUR
1924+0.037 EUR
3000+0.029 EUR
Mindestbestellmenge: 173
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WM02N31M WM02N31M WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
569+0.13 EUR
1316+0.054 EUR
1887+0.038 EUR
2101+0.034 EUR
Mindestbestellmenge: 193
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WM02P160R WM02P160R WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
341+0.21 EUR
424+0.17 EUR
451+0.16 EUR
511+0.14 EUR
Mindestbestellmenge: 122
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WM02P60M2 WM02P60M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2796 Stücke:
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WM04P56M2 WM04P56M2 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
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WM05P02F WAYON WM05P02F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03FB WAYON WM06N03FB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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WM06N03FE WAYON WM06N03FE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03GE WM06N03GE WAYON WM06N03GE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
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414+0.17 EUR
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2165+0.033 EUR
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WM06N03HE WM06N03HE WAYON WM06N03He.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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WM06N03LE WM06N03LE WAYON WM06N03LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
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839+0.085 EUR
2009+0.036 EUR
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WM06N03ME WM06N03ME WAYON WM06N03ME.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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WM10N35M3 WM10N35M3 WAYON WM10N35M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2938 Stücke:
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569+0.13 EUR
633+0.11 EUR
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WM4C62160A WM4C62160A WAYON WM4C62160A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 19.5mΩ
Power dissipation: 1.7W
Drain current: 8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
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WMAA4N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.5nC
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 77W
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WMAA4N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
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WMAA4N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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WMB009N03LG4 WMB009N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMB010N04LG4 WMB010N04LG4 WAYON WMB010N04LG4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
auf Bestellung 299 Stücke:
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WMB014N04LG4 WMB014N04LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB014N06HG4 WMB014N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB014N06LG4 WMB014N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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69+1.05 EUR
78+0.93 EUR
100+0.86 EUR
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WMB017N03LG2 WMB017N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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WMB020N03LG4 WMB020N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB023N03LG2 WMB023N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 198 Stücke:
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WMB025N06HG4 WMB025N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB025N06LG4 WMB025N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 62 Stücke:
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WMB027N08HG4 WMB027N08HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB034N06HG4 WMB034N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMB034N06LG4 WMB034N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 27 Stücke:
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T1635H-800NL
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; Igt: 35mA; TO262; THT; tube; Ifsm: 160A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO262
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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T2050H-800K
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; Igt: 50mA; TO220-3; THT; tube; Ifsm: 200A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 50mA
Case: TO220-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Features of semiconductor devices: high temperature
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T2535H-800A
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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T2535H-800AY
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 250A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220-3
Gate current: 35mA
Max. forward impulse current: 250A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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T3035H-800A
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 30A; Igt: 35mA; TO220ABIns; THT; tube
Mounting: THT
Type of thyristor: thyristor
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220ABIns
Max. load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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T4050H-800EA
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; Igt: 50mA; TO3PF; THT; tube; Ifsm: 400A
Mounting: THT
Features of semiconductor devices: high temperature
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Case: TO3PF
Produkt ist nicht verfügbar
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T435H-800AM
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
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T435H-800L
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 4A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 40A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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T835H-800A
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220ABIns; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
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T835H-800AM
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO252
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T835H-800K
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220-3; THT; tube; Ifsm: 80A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220-3
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
T835H-800L
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; Igt: 35mA; TO220FP; THT; tube; Ifsm: 80A
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Features of semiconductor devices: high temperature
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TE P0050150.00j5
Hersteller: WAYON
265V; 150R; 20%; 150°C; 200mA; dimensions: 7x5mm; r=6mm;   Thermistor PTC; 150R TE P0050150.00j5
Anzahl je Verpackung: 32 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
64+0.69 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WM01P41M
WM01P41M
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.1A; Idm: 15A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.1A
Pulsed drain current: 15A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
443+0.16 EUR
1034+0.069 EUR
1484+0.048 EUR
1651+0.043 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM02DH08D WM02DH08D.pdf
WM02DH08D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 750/-660mA; 200mW; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 750/-660mA
Power dissipation: 0.2W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 380/520mΩ
Mounting: SMD
Gate charge: 1/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
556+0.13 EUR
1330+0.054 EUR
1475+0.048 EUR
1667+0.043 EUR
3000+0.038 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN080C WM02DN080C.pdf
WM02DN080C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; Idm: 49A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 15.5mΩ
Drain current: 8A
Pulsed drain current: 49A
Gate charge: 11nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN085C WM02DN085C.pdf
WM02DN085C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8.5A; Idm: 56A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 10.9mΩ
Drain current: 8.5A
Pulsed drain current: 56A
Gate charge: 22.1nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
254+0.28 EUR
307+0.23 EUR
323+0.22 EUR
500+0.19 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN08D WM02DN08D.pdf
WM02DN08D
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 300mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 0.8A
Pulsed drain current: 3A
Gate charge: 1.1nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1589+0.044 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN08T WM02DN08T.pdf
WM02DN08T
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 800mA; Idm: 3A; 270mW; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.27W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
521+0.14 EUR
869+0.082 EUR
968+0.074 EUR
1097+0.065 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN095C WM02DN095C.pdf
WM02DN095C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.5A; Idm: 60A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 9.4mΩ
Drain current: 9.5A
Pulsed drain current: 60A
Gate charge: 22nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
207+0.35 EUR
248+0.29 EUR
262+0.27 EUR
500+0.24 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN110C WM02DN110C.pdf
WM02DN110C
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 11A; Idm: 70A; 1.56W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.56W
Case: DFN2030-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Drain current: 11A
Pulsed drain current: 70A
Gate charge: 23nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
231+0.31 EUR
281+0.25 EUR
317+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN48A
WM02DN48A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; Idm: 30A; 1.25W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 30mΩ
Drain current: 4.8A
Pulsed drain current: 30A
Gate charge: 10nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
939+0.076 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN50M3
WM02DN50M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 20A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 27mΩ
Drain current: 5A
Pulsed drain current: 20A
Gate charge: 11nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
562+0.13 EUR
1330+0.054 EUR
1480+0.048 EUR
1673+0.043 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN560Q WM02DN560Q.pdf
WM02DN560Q
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 56A; Idm: 100A; 31W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 31W
Case: DFN3030-8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.4mΩ
Drain current: 56A
Pulsed drain current: 100A
Gate charge: 27.8nC
Gate-source voltage: ±12V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
142+0.51 EUR
158+0.45 EUR
178+0.4 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN60M3
WM02DN60M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 25A; 1.5W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 20mΩ
Drain current: 6A
Pulsed drain current: 25A
Gate charge: 12nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
451+0.16 EUR
754+0.095 EUR
837+0.086 EUR
944+0.076 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN70A WM02DN70A.pdf
WM02DN70A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 2W; TSSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 13.5mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 8.8nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
334+0.21 EUR
417+0.17 EUR
443+0.16 EUR
506+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02DN70M3 WM02DN70M3.pdf
WM02DN70M3
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7A; Idm: 28A; 1.7W; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.7W
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 17mΩ
Drain current: 7A
Pulsed drain current: 28A
Gate charge: 9.6nC
Gate-source voltage: ±10V
Version: ESD
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
388+0.18 EUR
642+0.11 EUR
716+0.1 EUR
808+0.089 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WM02DP06T WM02DP06T.pdf
WM02DP06T
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -660mA; Idm: -2.64A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -660mA
Pulsed drain current: -2.64A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
521+0.14 EUR
875+0.082 EUR
971+0.074 EUR
1102+0.065 EUR
3000+0.058 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
WM02N08FB WM02N08FB.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 3A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 3A
Power dissipation: 0.15W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM02N20F
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM02N20G
WM02N20G
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
516+0.14 EUR
1202+0.059 EUR
1725+0.041 EUR
1924+0.037 EUR
3000+0.029 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
WM02N31M
WM02N31M
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.1A; Idm: 12.4A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Pulsed drain current: 12.4A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
569+0.13 EUR
1316+0.054 EUR
1887+0.038 EUR
2101+0.034 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WM02P160R
WM02P160R
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -16A; Idm: -64A; 6.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -16A
Pulsed drain current: -64A
Power dissipation: 6.5W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
341+0.21 EUR
424+0.17 EUR
451+0.16 EUR
511+0.14 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WM02P60M2
WM02P60M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
439+0.16 EUR
736+0.097 EUR
820+0.087 EUR
926+0.077 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WM04P56M2
WM04P56M2
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.6A
Power dissipation: 2W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of channel: enhancement
Pulsed drain current: -22.4A
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM05P02F WM05P02F.pdf
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -1A; 350mW; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -1A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FB WM06N03FB.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 360mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.36W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WM06N03FE WM06N03FE.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03GE WM06N03GE.pdf
WM06N03GE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
414+0.17 EUR
913+0.078 EUR
2165+0.033 EUR
2393+0.03 EUR
Mindestbestellmenge: 152
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WM06N03HE WM06N03He.pdf
WM06N03HE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM06N03LE WM06N03LE.pdf
WM06N03LE
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
382+0.19 EUR
839+0.085 EUR
2009+0.036 EUR
2223+0.032 EUR
Mindestbestellmenge: 167
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WM06N03ME WM06N03ME.pdf
WM06N03ME
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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WM10N35M3 WM10N35M3.pdf
WM10N35M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2938 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
343+0.21 EUR
569+0.13 EUR
633+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WM4C62160A WM4C62160A.pdf
WM4C62160A
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1.7W; CSP1515-4; ESD
Case: CSP1515-4
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common drain
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 19.5mΩ
Power dissipation: 1.7W
Drain current: 8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
261+0.27 EUR
317+0.23 EUR
358+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 136
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WMAA4N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 77W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 14.5nC
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 77W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMAA4N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 156W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 24.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMAA4N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB009N03LG4
WMB009N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 200A
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.49 EUR
Mindestbestellmenge: 48
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WMB010N04LG4 WMB010N04LG4.pdf
WMB010N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PDFN5060-8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 114W
Drain current: 268A
Pulsed drain current: 1072A
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
75+0.96 EUR
84+0.85 EUR
100+0.79 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N04LG4
WMB014N04LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 660A
Power dissipation: 62.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
Mindestbestellmenge: 55
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WMB014N06HG4
WMB014N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB014N06LG4
WMB014N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 278A; Idm: 1112A; 183.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 278A
Pulsed drain current: 1112A
Power dissipation: 183.8W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 143.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
69+1.05 EUR
78+0.93 EUR
100+0.86 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMB017N03LG2
WMB017N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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WMB020N03LG4
WMB020N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; Idm: 500A; 50W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 50W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 29.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
100+0.72 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
WMB023N03LG2
WMB023N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 251A; 49W; PDFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 251A
Power dissipation: 49W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
120+0.6 EUR
133+0.54 EUR
151+0.47 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06HG4
WMB025N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
71+1.01 EUR
80+0.9 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMB025N06LG4
WMB025N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
Mindestbestellmenge: 62
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WMB027N08HG4
WMB027N08HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 195A; Idm: 780A; 192.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 192.3W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06HG4
WMB034N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
68+1.06 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMB034N06LG4
WMB034N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
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