| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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WML4N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 Pulsed drain current: 16A Power dissipation: 40W Gate charge: 26nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WML4N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 Pulsed drain current: 16A Power dissipation: 45W Gate charge: 34nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WML50N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 138ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WML50P04TS | WAYON |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -42A Pulsed drain current: -168A Power dissipation: 36.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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WML53N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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WML53N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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WML53N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WML6N100D1 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Pulsed drain current: 24A Power dissipation: 65W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 249 Stücke: Lieferzeit 14-21 Tag (e) |
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WML6N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Pulsed drain current: 24A Power dissipation: 41.7W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WML6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WML6N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 86.2nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
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WML6N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
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WML7N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 28A Power dissipation: 63W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Gate charge: 24.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WML7N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 52W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 23nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WML80R1K0S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 22A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 13.2nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WML80R350S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.4A Pulsed drain current: 56A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WML80R480S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.2A Pulsed drain current: 48A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WML80R720S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 24A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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WML90R260S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W Mounting: THT Pulsed drain current: 50A Power dissipation: 34W Gate charge: 39.5nC Polarisation: unipolar Technology: WMOS™ S Drain current: 10A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 0.26Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WML98N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 87A Pulsed drain current: 435A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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WML9N50D1B | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 36A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMLL010N04LG4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 333.3W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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WMLL013N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 400A Pulsed drain current: 1.6kA Power dissipation: 468.8W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 243.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMLL014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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WMLL017N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMLL020N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 310A Pulsed drain current: 1240A Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMLL020N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 304A Pulsed drain current: 1216A Power dissipation: 468.7W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMLL020NV8HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 190A Pulsed drain current: 1.2kA Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 142nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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WMLL025N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 260A Pulsed drain current: 1040A Power dissipation: 347.2W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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WMLL030N12HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 225A Pulsed drain current: 900A Power dissipation: 365.8W Case: TOLL Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 144nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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WMLL040N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Pulsed drain current: 908A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 74.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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WMLL065N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 172A Pulsed drain current: 688A Power dissipation: 394.7W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMLL099N20HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Pulsed drain current: 568A Power dissipation: 500W Case: TOLL Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 68.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMLL130N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 117A Pulsed drain current: 620A Power dissipation: 416W Case: TOLL Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 188nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 196ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL130N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 96A Pulsed drain current: 435A Power dissipation: 312W Case: TOLL Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 195ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: TOLL Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL50N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 90W Case: TOLL Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 138ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL83N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 31A Pulsed drain current: 145A Power dissipation: 92W Case: TOLL Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL85N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 240A Power dissipation: 180W Case: TOLL Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 160ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL87N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 20A Pulsed drain current: 150A Power dissipation: 86W Case: TOLL Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 198ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL98N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 87A Pulsed drain current: 435A Power dissipation: 312W Case: TOLL Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 160ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| WMLL98N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL Case: TOLL Mounting: SMD Pulsed drain current: 360A Power dissipation: 290W Gate charge: 96nC Polarisation: unipolar Drain current: 72A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 10.6mΩ Reverse recovery time: 198ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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WMM020N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 258A Pulsed drain current: 1032A Power dissipation: 227W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM020N10HGS | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 280A Pulsed drain current: 1120A Power dissipation: 390.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 255nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM030N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 184A Pulsed drain current: 736A Power dissipation: 208.3W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM040N15HG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 126A Pulsed drain current: 800A Power dissipation: 378.7W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 74.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Pulsed drain current: 580A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM048NV6HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263 Case: TO263 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 28.5nC On-state resistance: 5.2mΩ Gate-source voltage: ±20V Drain current: 110A Drain-source voltage: 65V Power dissipation: 104.2W Pulsed drain current: 440A |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM053N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 164.5W Case: TO263 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 82.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM06N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 50W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMM07N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMM07N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 42W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMM07N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMM09N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM09N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 45W Case: TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 618 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM10N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 448 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM10N65C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 563 Stücke: Lieferzeit 14-21 Tag (e) |
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WMM10N70C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO263 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMM10N80M3 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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WMM11N60C2 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 63W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WML4N90D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 40W
Gate charge: 26nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 40W
Gate charge: 26nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML4N90D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 45W
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 45W
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML50N20JN |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML50P04TS |
Hersteller: WAYON
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 36.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 36.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 1.15 EUR |
| 122+ | 0.7 EUR |
| 146+ | 0.58 EUR |
| 250+ | 0.52 EUR |
| WML53N60C2 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.21 EUR |
| 16+ | 5.59 EUR |
| 25+ | 4.94 EUR |
| WML53N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.81 EUR |
| 15+ | 6.08 EUR |
| 16+ | 5.31 EUR |
| WML53N60FD |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML6N100D1 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 65W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 65W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 1.77 EUR |
| 61+ | 1.39 EUR |
| 70+ | 1.23 EUR |
| WML6N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 41.7W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 41.7W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML6N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML6N90D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 1.12 EUR |
| 86+ | 1 EUR |
| 97+ | 0.88 EUR |
| WML6N90D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 1.12 EUR |
| 112+ | 0.76 EUR |
| 148+ | 0.57 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.44 EUR |
| WML7N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 63W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 63W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML7N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R1K0S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R350S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R480S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R720S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML90R260S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML98N20JN |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| WML9N50D1B |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| WMLL010N04LG4 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 57+ | 1.51 EUR |
| 63+ | 1.36 EUR |
| 100+ | 1.19 EUR |
| WMLL013N08HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMLL014N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| WMLL017N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMLL020N08HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 310A
Pulsed drain current: 1240A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 310A
Pulsed drain current: 1240A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMLL020N10HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Power dissipation: 468.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Power dissipation: 468.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMLL020NV8HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 2.46 EUR |
| 37+ | 2.33 EUR |
| 40+ | 2.13 EUR |
| WMLL025N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 1.99 EUR |
| 46+ | 1.89 EUR |
| 52+ | 1.67 EUR |
| WMLL030N12HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 1.75 EUR |
| 52+ | 1.67 EUR |
| 58+ | 1.48 EUR |
| 100+ | 1.31 EUR |
| WMLL040N15HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.6 EUR |
| 14+ | 6.22 EUR |
| WMLL065N15HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WMLL099N20HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| 25+ | 6.3 EUR |
| WMLL130N20JN |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WMLL130N25JN |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
Produkt ist nicht verfügbar
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| WMLL40N20JN |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| WMLL50N20JN |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| WMLL83N25JN |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| WMLL85N20JN |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| WMLL87N25JN |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20A
Pulsed drain current: 150A
Power dissipation: 86W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 198ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20A
Pulsed drain current: 150A
Power dissipation: 86W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| WMLL98N20JN |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| WMLL98N25JN |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL
Case: TOLL
Mounting: SMD
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL
Case: TOLL
Mounting: SMD
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| WMM020N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.51 EUR |
| WMM020N10HGS |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.47 EUR |
| 26+ | 3.32 EUR |
| 30+ | 2.89 EUR |
| WMM030N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.47 EUR |
| WMM040N15HG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.81 EUR |
| 16+ | 5.46 EUR |
| 25+ | 4.86 EUR |
| WMM043N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.37 EUR |
| WMM048NV6HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 70+ | 1.21 EUR |
| WMM053N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.05 EUR |
| WMM06N80M3 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMM07N60C2 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMM07N65C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMM07N80M3 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMM09N60C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 161+ | 0.54 EUR |
| 181+ | 0.48 EUR |
| 200+ | 0.43 EUR |
| WMM09N65C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 618 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 155+ | 0.55 EUR |
| 173+ | 0.49 EUR |
| 191+ | 0.44 EUR |
| WMM10N60C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 124+ | 0.69 EUR |
| 140+ | 0.61 EUR |
| 155+ | 0.55 EUR |
| WMM10N65C2 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 563 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 121+ | 0.7 EUR |
| 137+ | 0.62 EUR |
| 152+ | 0.56 EUR |
| WMM10N70C2 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMM10N80M3 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WMM11N60C2 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH





















