| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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WML16N65FD | WAYON |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML16N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.4A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 19.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML17N25JN | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 6.5A Pulsed drain current: 33A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 7.1nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 98ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML18N06TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 18A Power dissipation: 20.2W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 72A Gate charge: 22nC |
auf Bestellung 388 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WML18N20JN | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP Case: TO220FP Mounting: THT Reverse recovery time: 80ns On-state resistance: 135mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 36W Pulsed drain current: 39A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 7.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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WML18N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML18N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 18A Power dissipation: 44.6W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 72A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML18N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML20N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML20N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ EM Power dissipation: 34W Case: TO220FP Mounting: THT Kind of package: tube Drain current: 17A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.24Ω Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML20N70D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 20A; Idm: 80A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 20A Pulsed drain current: 80A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML22N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 14.6nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML25N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W Drain-source voltage: 500V Drain current: 13A Case: TO220FP Polarisation: unipolar On-state resistance: 0.16Ω Pulsed drain current: 65A Power dissipation: 31W Technology: WMOS™ C4 Kind of channel: enhancement Gate charge: 22.1nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML25N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP Drain-source voltage: 500V Drain current: 25A Case: TO220FP Polarisation: unipolar On-state resistance: 0.27Ω Technology: WMOS™ D1 Kind of channel: enhancement Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML25N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 80A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML26N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Power dissipation: 31W Case: TO220FP Mounting: THT Kind of package: tube Drain current: 10.5A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.19Ω Pulsed drain current: 40A Gate charge: 22.1nC Polarisation: unipolar Technology: WMOS™ C4 |
auf Bestellung 393 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML26N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Power dissipation: 31W Case: TO220FP Mounting: THT Kind of package: tube Drain current: 10.5A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.21Ω Pulsed drain current: 40A Gate charge: 22.1nC Polarisation: unipolar Technology: WMOS™ F2 |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML26N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML26N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
auf Bestellung 178 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML26N65F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML26N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 50A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 198mΩ Mounting: THT Gate charge: 34.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML28N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 85A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML28N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ C4 Power dissipation: 31W Case: TO220FP Mounting: THT Gate charge: 27.3nC Kind of package: tube Pulsed drain current: 65A Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.16Ω |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML28N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W Type of transistor: N-MOSFET Technology: WMOS™ F2 Power dissipation: 31W Case: TO220FP Mounting: THT Gate charge: 27.3nC Kind of package: tube Pulsed drain current: 65A Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.19Ω |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML28N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W Drain-source voltage: 650V Drain current: 13A Case: TO220FP Polarisation: unipolar On-state resistance: 0.16Ω Pulsed drain current: 65A Power dissipation: 31W Technology: WMOS™ C4 Gate-source voltage: ±30V Kind of package: tube Gate charge: 27.3nC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML28N65F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W Drain-source voltage: 650V Drain current: 13A Case: TO220FP Polarisation: unipolar On-state resistance: 0.19Ω Pulsed drain current: 65A Power dissipation: 31W Technology: WMOS™ F2 Gate-source voltage: ±30V Kind of package: tube Gate charge: 27.3nC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML30N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML340N20HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP Mounting: THT Pulsed drain current: 112A Power dissipation: 59.5W Gate charge: 23nC Polarisation: unipolar Drain current: 28A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220FP On-state resistance: 34mΩ |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML36N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Power dissipation: 34W Case: TO220FP Mounting: THT Kind of package: tube Drain current: 20A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 97mΩ Pulsed drain current: 100A Gate charge: 46nC Polarisation: unipolar Technology: WMOS™ C4 |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML36N60F2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Power dissipation: 34W Case: TO220FP Mounting: THT Kind of package: tube Drain current: 20A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.11Ω Pulsed drain current: 100A Gate charge: 46nC Polarisation: unipolar Technology: WMOS™ F2 |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML36N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML38N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML38N65FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Power dissipation: 41W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A Gate charge: 40nC |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML40N20JN | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 141ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML4N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 14.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WML4N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.9Ω Mounting: THT Gate charge: 26nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 16A Power dissipation: 40W Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML4N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Gate charge: 34nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 16A Power dissipation: 45W Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML50N20JN | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Pulsed drain current: 120A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 138ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML50P04TS | WAYON |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -42A Pulsed drain current: -168A Power dissipation: 36.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML53N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML53N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML53N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML6N100D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 65W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML6N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 41.7W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 29nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML6N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML6N90D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 86.2nC Kind of channel: enhancement Power dissipation: 50W Technology: WMOS™ D1 Kind of package: tube Pulsed drain current: 24A |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML6N90D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 676 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WML7N65D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Gate charge: 24.3nC Kind of channel: enhancement Pulsed drain current: 28A Power dissipation: 63W Technology: WMOS™ D1 Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WML7N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 52W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 23nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WML80R1K0S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 22A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 13.2nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WML80R350S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.4A Pulsed drain current: 56A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WML80R480S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.2A Pulsed drain current: 48A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WML80R720S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 24A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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WML90R260S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W Mounting: THT Pulsed drain current: 50A Power dissipation: 34W Gate charge: 39.5nC Polarisation: unipolar Technology: WMOS™ S Drain current: 10A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220FP On-state resistance: 0.26Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WML98N20JN | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 87A Pulsed drain current: 435A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 160ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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WML9N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 36A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WMLL010N04LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 333.3W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMLL013N08HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 400A Pulsed drain current: 1.6kA Power dissipation: 468.8W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 243.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMLL014N06HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 378A Pulsed drain current: 1512A Power dissipation: 454.5W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WML16N65FD |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML16N65SR |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 19.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 19.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML17N25JN |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 7.1nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML18N06TS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 72A
Gate charge: 22nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 72A; 20.2W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 20.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 72A
Gate charge: 22nC
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
| WML18N20JN |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML18N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML18N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 72A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 44.6W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 44.6W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 72A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML18N65EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML20N50D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML20N65EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 17A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML20N70D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 20A; Idm: 80A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML22N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 14.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML25N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 65A
Power dissipation: 31W
Technology: WMOS™ C4
Kind of channel: enhancement
Gate charge: 22.1nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 31W
Drain-source voltage: 500V
Drain current: 13A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 65A
Power dissipation: 31W
Technology: WMOS™ C4
Kind of channel: enhancement
Gate charge: 22.1nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML25N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Drain-source voltage: 500V
Drain current: 25A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.27Ω
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 25A; TO220FP
Drain-source voltage: 500V
Drain current: 25A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.27Ω
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML25N65EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 13A; Idm: 80A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML26N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 10.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Pulsed drain current: 40A
Gate charge: 22.1nC
Polarisation: unipolar
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 10.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Pulsed drain current: 40A
Gate charge: 22.1nC
Polarisation: unipolar
Technology: WMOS™ C4
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
| WML26N60F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 10.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Pulsed drain current: 40A
Gate charge: 22.1nC
Polarisation: unipolar
Technology: WMOS™ F2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 10.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Pulsed drain current: 40A
Gate charge: 22.1nC
Polarisation: unipolar
Technology: WMOS™ F2
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
| WML26N60FD |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML26N65C4 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
| WML26N65F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML26N65SR |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML28N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML28N60C4 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Pulsed drain current: 65A
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Pulsed drain current: 65A
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
| WML28N60F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Pulsed drain current: 65A
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Power dissipation: 31W
Case: TO220FP
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Pulsed drain current: 65A
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| WML28N65C4 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Drain-source voltage: 650V
Drain current: 13A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 65A
Power dissipation: 31W
Technology: WMOS™ C4
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 27.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 13A; Idm: 65A; 31W
Drain-source voltage: 650V
Drain current: 13A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 65A
Power dissipation: 31W
Technology: WMOS™ C4
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 27.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| WML28N65F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Drain-source voltage: 650V
Drain current: 13A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 65A
Power dissipation: 31W
Technology: WMOS™ F2
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 27.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 31W
Drain-source voltage: 650V
Drain current: 13A
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 65A
Power dissipation: 31W
Technology: WMOS™ F2
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 27.3nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML30N65EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML340N20HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Mounting: THT
Pulsed drain current: 112A
Power dissipation: 59.5W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 34mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 28A; Idm: 112A; 59.5W; TO220FP
Mounting: THT
Pulsed drain current: 112A
Power dissipation: 59.5W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 34mΩ
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| WML36N60C4 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Pulsed drain current: 100A
Gate charge: 46nC
Polarisation: unipolar
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Pulsed drain current: 100A
Gate charge: 46nC
Polarisation: unipolar
Technology: WMOS™ C4
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| WML36N60F2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Pulsed drain current: 100A
Gate charge: 46nC
Polarisation: unipolar
Technology: WMOS™ F2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Power dissipation: 34W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Pulsed drain current: 100A
Gate charge: 46nC
Polarisation: unipolar
Technology: WMOS™ F2
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| WML36N65C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML38N60FD |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML38N65FD |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML3N150D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 40nC
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
| WML40N20JN |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML4N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 14.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 14.5nC
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| WML4N90D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 16A
Power dissipation: 40W
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Gate charge: 26nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 16A
Power dissipation: 40W
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML4N90D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 16A
Power dissipation: 45W
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 16A
Power dissipation: 45W
Technology: WMOS™ D1
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Im Einkaufswagen
Stück im Wert von UAH
| WML50N20JN |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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| WML50P04TS |
Hersteller: WAYON
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 36.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 36.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
| WML53N60C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
| WML53N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| WML53N60FD |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML6N100D1 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 65W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 65W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
| WML6N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 41.7W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 29nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 41.7W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 29nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML6N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML6N90D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of channel: enhancement
Power dissipation: 50W
Technology: WMOS™ D1
Kind of package: tube
Pulsed drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of channel: enhancement
Power dissipation: 50W
Technology: WMOS™ D1
Kind of package: tube
Pulsed drain current: 24A
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
| WML6N90D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 676 Stücke:
Lieferzeit 14-21 Tag (e)
| WML7N65D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of channel: enhancement
Pulsed drain current: 28A
Power dissipation: 63W
Technology: WMOS™ D1
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of channel: enhancement
Pulsed drain current: 28A
Power dissipation: 63W
Technology: WMOS™ D1
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML7N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R1K0S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R350S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R480S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML80R720S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML90R260S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML98N20JN |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WML9N50D1B |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| WMLL010N04LG4 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| WMLL013N08HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMLL014N06HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)