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WMM26N60FD WMM26N60FD WAYON WMx26N60FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM26N65FD WMM26N65FD WAYON WMx26N65FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM26N65SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 34.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM28N60C4 WMM28N60C4 WAYON WMx28N60C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
42+1.73 EUR
45+1.6 EUR
47+1.53 EUR
100+1.47 EUR
Mindestbestellmenge: 38
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WMM28N60C4 WMM28N60C4 WAYON WMx28N60C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.93 EUR
42+1.73 EUR
45+1.6 EUR
47+1.53 EUR
100+1.47 EUR
Mindestbestellmenge: 38
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WMM30N25JN WAYON WMx30N25JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 133ns
Produkt ist nicht verfügbar
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WMM340N20HG2 WMM340N20HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
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40+1.79 EUR
Mindestbestellmenge: 40
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WMM340N20HG2 WMM340N20HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.79 EUR
100+1.26 EUR
800+1.23 EUR
Mindestbestellmenge: 40
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WMM36N60C4 WAYON WMx36N60C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM36N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
Produkt ist nicht verfügbar
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WMM36N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM38N60C2 WMM38N60C2 WAYON WMx38N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
27+2.69 EUR
50+2.56 EUR
100+2.37 EUR
Mindestbestellmenge: 25
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WMM38N60C2 WMM38N60C2 WAYON WMx38N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 371 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.89 EUR
27+2.69 EUR
50+2.56 EUR
100+2.37 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMM40N20JN WAYON WMx40N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
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WMM4N90D1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
Produkt ist nicht verfügbar
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WMM4N90D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
Produkt ist nicht verfügbar
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WMM50P04T1 WAYON WMM50P04T1-CYG SMD P channel transistors
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
56+1.27 EUR
107+0.67 EUR
1600+0.4 EUR
Mindestbestellmenge: 56
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WMM80N08TS WAYON WMM80N08TS-CYG SMD N channel transistors
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.18 EUR
72+0.99 EUR
1600+0.63 EUR
Mindestbestellmenge: 61
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WMM80P04TS WAYON WMM80P04TS-CYG SMD P channel transistors
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.04 EUR
73+0.97 EUR
1600+0.59 EUR
Mindestbestellmenge: 35
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WMM90N08TS WMM90N08TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
82+0.88 EUR
86+0.83 EUR
Mindestbestellmenge: 70
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WMM90N08TS WMM90N08TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
82+0.88 EUR
86+0.83 EUR
100+0.72 EUR
800+0.69 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
WMM90R360S WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7.8A
Pulsed drain current: 52A
Power dissipation: 183W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM95P06TS WAYON WMM95P06TS-CYG SMD P channel transistors
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.17 EUR
62+1.16 EUR
1600+0.79 EUR
Mindestbestellmenge: 61
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WMMB015N08HGS WAYON WMMB015N08HGS-CYG SMD N channel transistors
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
8+8.94 EUR
20+3.58 EUR
1600+2.2 EUR
Mindestbestellmenge: 4
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WMMB020N10HG4 WAYON WMMB020N10HG4-CYG SMD N channel transistors
auf Bestellung 240 Stücke:
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26+2.85 EUR
36+2.02 EUR
38+1.9 EUR
Mindestbestellmenge: 26
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WMN07N60C2 WMN07N60C2 WAYON WMK07N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMN07N65C2 WMN07N65C2 WAYON WMK07N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMN07N80M3 WMN07N80M3 WAYON WMx07N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Produkt ist nicht verfügbar
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WMN08N80M3 WMN08N80M3 WAYON WMx08N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN09N60C2 WAYON WMN09N60C2-CYG THT N channel transistors
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
61+1.17 EUR
168+0.43 EUR
Mindestbestellmenge: 22
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WMN10N60C2 WMN10N60C2 WAYON WMx10N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
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WMN10N60C2 WMN10N60C2 WAYON WMx10N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
5+14.3 EUR
25+2.86 EUR
100+0.72 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMN10N65C2 WMN10N65C2 WAYON WMx10N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
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WMN10N65C2 WMN10N65C2 WAYON WMx10N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.2 EUR
25+2.86 EUR
100+0.72 EUR
500+0.47 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
WMN11N60C2 WMN11N60C2 WAYON WMx11N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN11N65C2 WMN11N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMN11N65C2 WMN11N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.79 EUR
100+0.72 EUR
500+0.54 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMN11N80M3 WMN11N80M3 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN12N80M3 WMN12N80M3 WAYON WMx12N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN14N65C2 WMN14N65C2 WAYON WMx14N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N60C2 WMN16N60C2 WAYON WMx16N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N60FD WMN16N60FD WAYON WMx16N60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N65C2 WMN16N65C2 WAYON WMx16N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.4 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N65C2 WMN16N65C2 WAYON WMx16N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.4 EUR
25+2.86 EUR
100+0.79 EUR
500+0.73 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMN20N60C2 WMN20N60C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN20N65C2 WMN20N65C2 WAYON WMx20N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C2 WMN26N60C2 WAYON WMx26N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C4 WMN26N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
28+2.56 EUR
34+2.16 EUR
38+1.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C4 WMN26N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.86 EUR
28+2.56 EUR
34+2.16 EUR
38+1.93 EUR
100+1.79 EUR
250+1.7 EUR
500+1.62 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60FD WMN26N60FD WAYON WMx26N60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N65C2 WMN26N65C2 WAYON WMx26N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN36N60C4 WMN36N60C4 WAYON WMx36N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
17+4.35 EUR
20+3.65 EUR
25+3.27 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMN36N60C4 WMN36N60C4 WAYON WMx36N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.86 EUR
17+4.35 EUR
20+3.65 EUR
25+3.27 EUR
100+3.05 EUR
250+2.9 EUR
500+2.76 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMO048NV6HG4 WAYON WMO048NV6HG4-CYG SMD N channel transistors
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
62+1.16 EUR
68+1.06 EUR
92+0.77 EUR
5000+0.46 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMO04N65C2 WMO04N65C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N100C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C2 WMO07N60C2 WAYON WMO07N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
159+0.45 EUR
167+0.43 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C2 WMO07N60C2 WAYON WMO07N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.1 EUR
159+0.45 EUR
167+0.43 EUR
500+0.35 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C2 WMO07N65C2 WAYON WMx07N65C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
148+0.48 EUR
172+0.42 EUR
190+0.38 EUR
250+0.37 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N60FD WMx26N60FD.pdf
WMM26N60FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N65FD WMx26N65FD.pdf
WMM26N65FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM26N65SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: SMD
Gate charge: 34.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM28N60C4 WMx28N60C4.pdf
WMM28N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
42+1.73 EUR
45+1.6 EUR
47+1.53 EUR
100+1.47 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMM28N60C4 WMx28N60C4.pdf
WMM28N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 27.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.93 EUR
42+1.73 EUR
45+1.6 EUR
47+1.53 EUR
100+1.47 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMM30N25JN WMx30N25JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 133ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM340N20HG2
WMM340N20HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMM340N20HG2
WMM340N20HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 148A; 173.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 148A
Power dissipation: 173.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.79 EUR
100+1.26 EUR
800+1.23 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMM36N60C4 WMx36N60C4.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM36N60F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 46nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM36N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM38N60C2 WMx38N60C2.pdf
WMM38N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
27+2.69 EUR
50+2.56 EUR
100+2.37 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMM38N60C2 WMx38N60C2.pdf
WMM38N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 371 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.89 EUR
27+2.69 EUR
50+2.56 EUR
100+2.37 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMM40N20JN WMx40N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM4N90D1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 65W
Gate charge: 26nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM4N90D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 63W
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM50P04T1
Hersteller: WAYON
WMM50P04T1-CYG SMD P channel transistors
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
56+1.27 EUR
107+0.67 EUR
1600+0.4 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
WMM80N08TS
Hersteller: WAYON
WMM80N08TS-CYG SMD N channel transistors
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.18 EUR
72+0.99 EUR
1600+0.63 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
WMM80P04TS
Hersteller: WAYON
WMM80P04TS-CYG SMD P channel transistors
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.04 EUR
73+0.97 EUR
1600+0.59 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
WMM90N08TS
WMM90N08TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
82+0.88 EUR
86+0.83 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
WMM90N08TS
WMM90N08TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 360A; 135.9W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 135.9W
Drain current: 90A
Pulsed drain current: 360A
Gate charge: 111nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
70+1.03 EUR
82+0.88 EUR
86+0.83 EUR
100+0.72 EUR
800+0.69 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
WMM90R360S
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7.8A
Pulsed drain current: 52A
Power dissipation: 183W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM95P06TS
Hersteller: WAYON
WMM95P06TS-CYG SMD P channel transistors
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.17 EUR
62+1.16 EUR
1600+0.79 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
WMMB015N08HGS
Hersteller: WAYON
WMMB015N08HGS-CYG SMD N channel transistors
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+17.88 EUR
8+8.94 EUR
20+3.58 EUR
1600+2.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMMB020N10HG4
Hersteller: WAYON
WMMB020N10HG4-CYG SMD N channel transistors
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.85 EUR
36+2.02 EUR
38+1.9 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
WMN07N60C2 WMK07N60C2.pdf
WMN07N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN07N65C2 WMK07N65C2.pdf
WMN07N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN07N80M3 WMx07N80M3.pdf
WMN07N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN08N80M3 WMx08N80M3.pdf
WMN08N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN09N60C2
Hersteller: WAYON
WMN09N60C2-CYG THT N channel transistors
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.25 EUR
61+1.17 EUR
168+0.43 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WMN10N60C2 WMx10N60C2.pdf
WMN10N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMN10N60C2 WMx10N60C2.pdf
WMN10N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
5+14.3 EUR
25+2.86 EUR
100+0.72 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMN10N65C2 WMx10N65C2.pdf
WMN10N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
WMN10N65C2 WMx10N65C2.pdf
WMN10N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.2 EUR
25+2.86 EUR
100+0.72 EUR
500+0.47 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
WMN11N60C2 WMx11N60C2.pdf
WMN11N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN11N65C2
WMN11N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMN11N65C2
WMN11N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.79 EUR
100+0.72 EUR
500+0.54 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMN11N80M3
WMN11N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN12N80M3 WMx12N80M3.pdf
WMN12N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN14N65C2 WMx14N65C2.pdf
WMN14N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N60C2 WMx16N60C2.pdf
WMN16N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N60FD WMx16N60FD.pdf
WMN16N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N65C2 WMx16N65C2.pdf
WMN16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N65C2 WMx16N65C2.pdf
WMN16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.4 EUR
25+2.86 EUR
100+0.79 EUR
500+0.73 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMN20N60C2
WMN20N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN20N65C2 WMx20N65C2.pdf
WMN20N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C2 WMx26N60C2.pdf
WMN26N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C4
WMN26N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.56 EUR
34+2.16 EUR
38+1.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C4
WMN26N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.86 EUR
28+2.56 EUR
34+2.16 EUR
38+1.93 EUR
100+1.79 EUR
250+1.7 EUR
500+1.62 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60FD WMx26N60FD.pdf
WMN26N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N65C2 WMx26N65C2.pdf
WMN26N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN36N60C4 WMx36N60C4.pdf
WMN36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
17+4.35 EUR
20+3.65 EUR
25+3.27 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMN36N60C4 WMx36N60C4.pdf
WMN36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.86 EUR
17+4.35 EUR
20+3.65 EUR
25+3.27 EUR
100+3.05 EUR
250+2.9 EUR
500+2.76 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
WMO048NV6HG4
Hersteller: WAYON
WMO048NV6HG4-CYG SMD N channel transistors
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
62+1.16 EUR
68+1.06 EUR
92+0.77 EUR
5000+0.46 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
WMO04N65C2
WMO04N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N100C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C2 WMO07N60C2.pdf
WMO07N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
159+0.45 EUR
167+0.43 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C2 WMO07N60C2.pdf
WMO07N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
65+1.1 EUR
159+0.45 EUR
167+0.43 EUR
500+0.35 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C2 WMx07N65C2.pdf
WMO07N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
148+0.48 EUR
172+0.42 EUR
190+0.38 EUR
250+0.37 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
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