| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WMK80N08TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Pulsed drain current: 320A Power dissipation: 93W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 871 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMK83N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 31A Pulsed drain current: 145A Power dissipation: 92W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMK85N20JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 240A Power dissipation: 180W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 21nC Reverse recovery time: 160ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMK90N08TS | WAYON | WMK90N08TS-CYG THT N channel transistors |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMK90R1K1S | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMK93N25JN | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 42A Pulsed drain current: 280A Power dissipation: 180W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WMK9N50D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Pulsed drain current: 36A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WML030N06HG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP Mounting: THT Kind of channel: enhancement Case: TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 68nC On-state resistance: 3.4mΩ Power dissipation: 35.7W Drain current: 78A Drain-source voltage: 60V Pulsed drain current: 312A Kind of package: tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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WML030N06HG4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP Mounting: THT Kind of channel: enhancement Case: TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 68nC On-state resistance: 3.4mΩ Power dissipation: 35.7W Drain current: 78A Drain-source voltage: 60V Pulsed drain current: 312A Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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WML043N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 280A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Gate charge: 98.4nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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WML043N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 280A Power dissipation: 50W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Gate charge: 98.4nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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WML04N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 20W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WML04N60PC4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Pulsed drain current: 7A Power dissipation: 18W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: THT Gate charge: 2.8nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
auf Bestellung 978 Stücke: Lieferzeit 14-21 Tag (e) |
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WML04N60PC4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Pulsed drain current: 7A Power dissipation: 18W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: THT Gate charge: 2.8nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 978 Stücke: Lieferzeit 7-14 Tag (e) |
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| WML05N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Pulsed drain current: 11A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WML05N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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WML05N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 191 Stücke: Lieferzeit 7-14 Tag (e) |
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WML060N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 260A; 54.3W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 260A Power dissipation: 54.3W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Gate charge: 81.8nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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WML060N10HGS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 260A; 54.3W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 260A Power dissipation: 54.3W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Gate charge: 81.8nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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WML06N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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WML06N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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WML06N80M3 Produktcode: 193245
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Lieblingsprodukt
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Wayon |
Transistoren > MOSFET N-CH Gehäuse: TO-220F Uds,V: 800 V Idd,A: 5 A Rds(on), Ohm: 1,8 Ohm Ciss, pF/Qg, nC: 300/10,7 JHGF: THT |
Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WML071N15HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Gate charge: 69nC On-state resistance: 7.1mΩ Gate-source voltage: ±20V Drain current: 120A Drain-source voltage: 150V Power dissipation: 272.7W Pulsed drain current: 480A Polarisation: unipolar |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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WML071N15HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Gate charge: 69nC On-state resistance: 7.1mΩ Gate-source voltage: ±20V Drain current: 120A Drain-source voltage: 150V Power dissipation: 272.7W Pulsed drain current: 480A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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WML07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
auf Bestellung 438 Stücke: Lieferzeit 14-21 Tag (e) |
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WML07N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 438 Stücke: Lieferzeit 7-14 Tag (e) |
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WML07N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
auf Bestellung 464 Stücke: Lieferzeit 14-21 Tag (e) |
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WML07N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 464 Stücke: Lieferzeit 7-14 Tag (e) |
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| WML07N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.8A Pulsed drain current: 9A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML07N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.8A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 5.2nC Pulsed drain current: 9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WML080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Pulsed drain current: 168A Power dissipation: 28.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: THT Gate charge: 25.4nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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WML080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Pulsed drain current: 168A Power dissipation: 28.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: THT Gate charge: 25.4nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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WML08N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 7.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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WML08N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 7.3nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 435 Stücke: Lieferzeit 7-14 Tag (e) |
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| WML08N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 7.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML08N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 3.6A; Idm: 12A; 26W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 7.3nC Pulsed drain current: 12A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WML08N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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WML08N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 494 Stücke: Lieferzeit 7-14 Tag (e) |
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| WML099N10HGS | WAYON | WML099N10HGS-CYG THT N channel transistors |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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WML09N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 26W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 458 Stücke: Lieferzeit 14-21 Tag (e) |
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WML09N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 26W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 5.3A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 458 Stücke: Lieferzeit 7-14 Tag (e) |
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WML100N07TS | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 65A; Idm: 260A; 56.8W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 65A Pulsed drain current: 260A Power dissipation: 56.8W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WML10N100C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3.3A Pulsed drain current: 18A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 18.8nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML10N50C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Case: TO220FP Polarisation: unipolar Technology: WMOS™ C4 Gate charge: 7.3nC On-state resistance: 0.63Ω Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 26W Gate-source voltage: ±30V Drain-source voltage: 500V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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WML10N60C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 9.6nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WML10N65C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 9.6nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML10N65EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 13.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML10N70C4 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 27W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 9.6nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML10N70D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 10A; Idm: 40A; 62.5W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 700V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 880mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 25nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML10N70EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 28W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 13.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| WML10N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 33nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WML10N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 33nC |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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WML10N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 33nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 465 Stücke: Lieferzeit 7-14 Tag (e) |
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WML10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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WML10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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WML11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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WML11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WML11N65SR | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.4A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 13.7nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
WML11N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 28W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
WML11N80M3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 525 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMK80N08TS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 93W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 93W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 871 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 87+ | 0.83 EUR |
| 117+ | 0.61 EUR |
| 124+ | 0.58 EUR |
| 2000+ | 0.56 EUR |
| WMK83N25JN |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMK85N20JN |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMK90N08TS |
Hersteller: WAYON
WMK90N08TS-CYG THT N channel transistors
WMK90N08TS-CYG THT N channel transistors
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 82+ | 0.87 EUR |
| 2000+ | 0.58 EUR |
| WMK90R1K1S |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMK93N25JN |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMK9N50D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML030N06HG4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Mounting: THT
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 68nC
On-state resistance: 3.4mΩ
Power dissipation: 35.7W
Drain current: 78A
Drain-source voltage: 60V
Pulsed drain current: 312A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Mounting: THT
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 68nC
On-state resistance: 3.4mΩ
Power dissipation: 35.7W
Drain current: 78A
Drain-source voltage: 60V
Pulsed drain current: 312A
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| WML030N06HG4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Mounting: THT
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 68nC
On-state resistance: 3.4mΩ
Power dissipation: 35.7W
Drain current: 78A
Drain-source voltage: 60V
Pulsed drain current: 312A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 78A; Idm: 312A; 35.7W; TO220FP
Mounting: THT
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 68nC
On-state resistance: 3.4mΩ
Power dissipation: 35.7W
Drain current: 78A
Drain-source voltage: 60V
Pulsed drain current: 312A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 10+ | 7.15 EUR |
| 50+ | 1.43 EUR |
| 250+ | 0.77 EUR |
| 1000+ | 0.76 EUR |
| WML043N10HGS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| WML043N10HGS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 50W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| 45+ | 1.59 EUR |
| 1000+ | 0.94 EUR |
| WML04N60C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML04N60PC4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
auf Bestellung 978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 133+ | 0.54 EUR |
| 221+ | 0.32 EUR |
| 257+ | 0.28 EUR |
| 500+ | 0.23 EUR |
| WML04N60PC4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 1.6A; Idm: 7A; 18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.6A
Pulsed drain current: 7A
Power dissipation: 18W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 2.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 978 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 133+ | 0.54 EUR |
| 221+ | 0.32 EUR |
| 257+ | 0.28 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
| WML05N100C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML05N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 93+ | 0.77 EUR |
| 106+ | 0.67 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| WML05N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 191 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 93+ | 0.77 EUR |
| 106+ | 0.67 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| WML060N10HGS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 260A; 54.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 54.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 81.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 260A; 54.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 54.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 81.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.7 EUR |
| WML060N10HGS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 260A; 54.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 54.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 81.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 260A; 54.3W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 54.3W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 81.8nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.7 EUR |
| 58+ | 1.23 EUR |
| 2000+ | 0.73 EUR |
| WML06N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 103+ | 0.7 EUR |
| 116+ | 0.62 EUR |
| 120+ | 0.6 EUR |
| 125+ | 0.57 EUR |
| WML06N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 103+ | 0.7 EUR |
| 116+ | 0.62 EUR |
| 120+ | 0.6 EUR |
| 125+ | 0.57 EUR |
| WML06N80M3 Produktcode: 193245
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller: Wayon
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 800 V
Idd,A: 5 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 300/10,7
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 800 V
Idd,A: 5 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 300/10,7
JHGF: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML071N15HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 29+ | 2.52 EUR |
| 30+ | 2.39 EUR |
| WML071N15HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 120A; Idm: 480A; 272.7W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Gate charge: 69nC
On-state resistance: 7.1mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 272.7W
Pulsed drain current: 480A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 29+ | 2.52 EUR |
| 30+ | 2.39 EUR |
| 2000+ | 2.29 EUR |
| WML07N60C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 134+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| WML07N60C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 23W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 438 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 134+ | 0.53 EUR |
| 153+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| WML07N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 119+ | 0.6 EUR |
| 132+ | 0.54 EUR |
| 143+ | 0.5 EUR |
| 250+ | 0.48 EUR |
| WML07N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Anzahl je Verpackung: 1 Stücke
auf Bestellung 464 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 119+ | 0.6 EUR |
| 132+ | 0.54 EUR |
| 143+ | 0.5 EUR |
| 250+ | 0.48 EUR |
| 500+ | 0.44 EUR |
| WML07N65C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML07N70C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.2nC
Pulsed drain current: 9A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 23W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.2nC
Pulsed drain current: 9A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML080N10HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.3 EUR |
| WML080N10HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.3 EUR |
| 50+ | 1.43 EUR |
| 250+ | 0.53 EUR |
| 1000+ | 0.52 EUR |
| WML08N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 73+ | 0.98 EUR |
| 87+ | 0.83 EUR |
| 97+ | 0.74 EUR |
| 104+ | 0.69 EUR |
| 250+ | 0.66 EUR |
| WML08N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 435 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 73+ | 0.98 EUR |
| 87+ | 0.83 EUR |
| 97+ | 0.74 EUR |
| 104+ | 0.69 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.59 EUR |
| WML08N65C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML08N70C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.3nC
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.3nC
Pulsed drain current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML08N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 100+ | 0.72 EUR |
| 113+ | 0.64 EUR |
| 131+ | 0.55 EUR |
| 138+ | 0.52 EUR |
| WML08N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 494 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 100+ | 0.72 EUR |
| 113+ | 0.64 EUR |
| 131+ | 0.55 EUR |
| 138+ | 0.52 EUR |
| WML099N10HGS |
Hersteller: WAYON
WML099N10HGS-CYG THT N channel transistors
WML099N10HGS-CYG THT N channel transistors
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 85+ | 0.84 EUR |
| 2000+ | 0.51 EUR |
| WML09N70C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 116+ | 0.62 EUR |
| 133+ | 0.54 EUR |
| 139+ | 0.52 EUR |
| 147+ | 0.49 EUR |
| WML09N70C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 458 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 116+ | 0.62 EUR |
| 133+ | 0.54 EUR |
| 139+ | 0.52 EUR |
| 147+ | 0.49 EUR |
| 500+ | 0.47 EUR |
| WML100N07TS |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 65A; Idm: 260A; 56.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 56.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 65A; Idm: 260A; 56.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 56.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N100C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N50C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Technology: WMOS™ C4
Gate charge: 7.3nC
On-state resistance: 0.63Ω
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 26W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 26W
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Technology: WMOS™ C4
Gate charge: 7.3nC
On-state resistance: 0.63Ω
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 26W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N60C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N65C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N65EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N70C4 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 27W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N70D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 25nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 700V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 25nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N70EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML10N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 94+ | 0.76 EUR |
| 107+ | 0.67 EUR |
| 250+ | 0.61 EUR |
| WML10N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 465 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 94+ | 0.76 EUR |
| 107+ | 0.67 EUR |
| 250+ | 0.61 EUR |
| 500+ | 0.59 EUR |
| WML10N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| WML10N80M3 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.82 EUR |
| WML11N65C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 82+ | 0.88 EUR |
| 93+ | 0.78 EUR |
| 103+ | 0.7 EUR |
| WML11N65C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 82+ | 0.88 EUR |
| 93+ | 0.78 EUR |
| 103+ | 0.7 EUR |
| 500+ | 0.66 EUR |
| WML11N65SR |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML11N70C2 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WML11N80M3 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 67+ | 1.07 EUR |
| 71+ | 1.02 EUR |
| 500+ | 0.97 EUR |














