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WML4N90D1 WML4N90D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 40W
Gate charge: 26nC
Produkt ist nicht verfügbar
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WML4N90D1B WML4N90D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 45W
Gate charge: 34nC
Produkt ist nicht verfügbar
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WML50N20JN WML50N20JN WAYON WMx50N20JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
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WML50P04TS WML50P04TS WAYON Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 36.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 478 Stücke:
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74+1.15 EUR
122+0.7 EUR
146+0.58 EUR
250+0.52 EUR
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WML53N60C2 WML53N60C2 WAYON WMx53N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 87 Stücke:
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14+6.21 EUR
16+5.59 EUR
25+4.94 EUR
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WML53N60C4 WML53N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
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13+6.81 EUR
15+6.08 EUR
16+5.31 EUR
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WML53N60FD WML53N60FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML6N100D1 WML6N100D1 WAYON WML6N100D1_W15100003_V1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 65W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 249 Stücke:
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49+1.77 EUR
61+1.39 EUR
70+1.23 EUR
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WML6N80D1 WML6N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 41.7W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML6N80D1B WML6N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML6N90D1 WML6N90D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 224 Stücke:
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76+1.12 EUR
86+1 EUR
97+0.88 EUR
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WML6N90D1B WML6N90D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 679 Stücke:
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76+1.12 EUR
112+0.76 EUR
148+0.57 EUR
250+0.51 EUR
500+0.44 EUR
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WML7N65D1B WML7N65D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 63W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
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WML7N80D1 WML7N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
Produkt ist nicht verfügbar
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WML80R1K0S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
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WML80R350S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML80R480S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML80R720S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML90R260S WML90R260S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
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WML98N20JN WAYON WMx98N20JN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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WML9N50D1B WML9N50D1B WAYON WMx9N50D1B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMLL010N04LG4 WMLL010N04LG4 WAYON WMLL010N04LG4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 117 Stücke:
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57+1.51 EUR
63+1.36 EUR
100+1.19 EUR
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WMLL013N08HGS WMLL013N08HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMLL014N06HG4 WMLL014N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMLL017N10HGS WMLL017N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMLL020N08HGS WMLL020N08HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 310A
Pulsed drain current: 1240A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMLL020N10HG4 WMLL020N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Power dissipation: 468.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMLL020NV8HGS WMLL020NV8HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
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35+2.46 EUR
37+2.33 EUR
40+2.13 EUR
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WMLL025N10HGS WMLL025N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 93 Stücke:
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46+1.89 EUR
52+1.67 EUR
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WMLL030N12HGS WMLL030N12HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 165 Stücke:
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52+1.67 EUR
58+1.48 EUR
100+1.31 EUR
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WMLL040N15HG2 WMLL040N15HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 19 Stücke:
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13+6.6 EUR
14+6.22 EUR
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WMLL065N15HG2 WMLL065N15HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMLL099N20HG2 WMLL099N20HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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12+7.09 EUR
25+6.3 EUR
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WMLL130N20JN WAYON WMx130N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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WMLL130N25JN WAYON WMx130N25JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
Produkt ist nicht verfügbar
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WMLL40N20JN WAYON WMx40N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
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WMLL50N20JN WAYON WMx50N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
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WMLL83N25JN WAYON WMx83N25JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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WMLL85N20JN WAYON WMx85N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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WMLL87N25JN WAYON WMx87N25JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20A
Pulsed drain current: 150A
Power dissipation: 86W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
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WMLL98N20JN WAYON WMx98N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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WMLL98N25JN WAYON WMx98N25JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL
Case: TOLL
Mounting: SMD
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
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WMM020N06HG4 WMM020N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMM020N10HGS WMM020N10HGS WAYON WMM020N10HGS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMM030N06HG4 WMM030N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMM040N15HG2 WMM040N15HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMM043N10HGS WMM043N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMM048NV6HG4 WMM048NV6HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
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WMM053N10HGS WMM053N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMM06N80M3 WMM06N80M3 WAYON WMx06N80M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMM07N60C2 WMM07N60C2 WAYON WMO07N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM07N65C2 WMM07N65C2 WAYON WMx07N65C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM07N80M3 WMM07N80M3 WAYON WMx07N80M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM09N60C2 WMM09N60C2 WAYON WMx09N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 560 Stücke:
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161+0.54 EUR
181+0.48 EUR
200+0.43 EUR
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WMM09N65C2 WMM09N65C2 WAYON WMx09N65C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 618 Stücke:
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155+0.55 EUR
173+0.49 EUR
191+0.44 EUR
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WMM10N60C2 WMM10N60C2 WAYON WMx10N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 448 Stücke:
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91+0.94 EUR
124+0.69 EUR
140+0.61 EUR
155+0.55 EUR
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WMM10N65C2 WMM10N65C2 WAYON WMx10N65C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 563 Stücke:
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121+0.7 EUR
137+0.62 EUR
152+0.56 EUR
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WMM10N70C2 WMM10N70C2 WAYON WMx10N70C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM10N80M3 WMM10N80M3 WAYON WMx10N80M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM11N60C2 WMM11N60C2 WAYON WMx11N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML4N90D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 40W
Gate charge: 26nC
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WML4N90D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 4A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ D1
Pulsed drain current: 16A
Power dissipation: 45W
Gate charge: 34nC
Produkt ist nicht verfügbar
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WML50N20JN WMx50N20JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
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WML50P04TS
Hersteller: WAYON
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 36.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 36.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 478 Stücke:
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74+1.15 EUR
122+0.7 EUR
146+0.58 EUR
250+0.52 EUR
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WML53N60C2 WMx53N60C2.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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14+6.21 EUR
16+5.59 EUR
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WML53N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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15+6.08 EUR
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WML53N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 53A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML6N100D1 WML6N100D1_W15100003_V1.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 6A; Idm: 24A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 65W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 249 Stücke:
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49+1.77 EUR
61+1.39 EUR
70+1.23 EUR
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WML6N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 41.7W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 41.7W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WML6N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WML6N90D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
76+1.12 EUR
86+1 EUR
97+0.88 EUR
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WML6N90D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
76+1.12 EUR
112+0.76 EUR
148+0.57 EUR
250+0.51 EUR
500+0.44 EUR
Mindestbestellmenge: 76 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WML7N65D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 63W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 24.3nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WML7N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 28A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 23nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WML80R1K0S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 3.6A; Idm: 22A; 29W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 22A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 13.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WML80R350S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 34W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.4A
Pulsed drain current: 56A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WML80R480S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 7.2A; Idm: 48A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.2A
Pulsed drain current: 48A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WML80R720S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 4.2A; Idm: 24A; 31W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 24A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WML90R260S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 34W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 34W
Gate charge: 39.5nC
Polarisation: unipolar
Technology: WMOS™ S
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.26Ω
Produkt ist nicht verfügbar
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WML98N20JN WMx98N20JN.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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WML9N50D1B WMx9N50D1B.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMLL010N04LG4 WMLL010N04LG4.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 378A; Idm: 1512A; 333.3W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 333.3W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 117 Stücke:
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AnzahlPrivatkunde
54+1.59 EUR
57+1.51 EUR
63+1.36 EUR
100+1.19 EUR
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WMLL013N08HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 400A; Idm: 1600A; 468.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 400A
Pulsed drain current: 1.6kA
Power dissipation: 468.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 243.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMLL014N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+85.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMLL017N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 378A; Idm: 1512A; 454.5W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 378A
Pulsed drain current: 1512A
Power dissipation: 454.5W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMLL020N08HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1240A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 310A
Pulsed drain current: 1240A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMLL020N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 304A; Idm: 1216A; 468.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 304A
Pulsed drain current: 1216A
Power dissipation: 468.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMLL020NV8HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 190A; Idm: 1200A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 190A
Pulsed drain current: 1.2kA
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.46 EUR
37+2.33 EUR
40+2.13 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL025N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; Idm: 1040A; 347.2W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Pulsed drain current: 1040A
Power dissipation: 347.2W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 93 Stücke:
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43+1.99 EUR
46+1.89 EUR
52+1.67 EUR
Mindestbestellmenge: 43 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL030N12HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 225A; Idm: 900A; 365.8W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 225A
Pulsed drain current: 900A
Power dissipation: 365.8W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 144nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
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49+1.75 EUR
52+1.67 EUR
58+1.48 EUR
100+1.31 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
WMLL040N15HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; Idm: 908A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Pulsed drain current: 908A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 19 Stücke:
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13+6.6 EUR
14+6.22 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
WMLL065N15HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 172A; Idm: 688A; 394.7W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 172A
Pulsed drain current: 688A
Power dissipation: 394.7W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL099N20HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; Idm: 568A; 500W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 568A
Power dissipation: 500W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 68.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.09 EUR
25+6.3 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL130N20JN WMx130N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 117A
Pulsed drain current: 620A
Power dissipation: 416W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 188nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 196ns
Produkt ist nicht verfügbar
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WMLL130N25JN WMx130N25JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 96A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 96A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 195ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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WMLL40N20JN WMx40N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL50N20JN WMx50N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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WMLL83N25JN WMx83N25JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL85N20JN WMx85N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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WMLL87N25JN WMx87N25JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20A; Idm: 150A; 86W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20A
Pulsed drain current: 150A
Power dissipation: 86W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL98N20JN WMx98N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 87A; Idm: 435A; 312W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 87A
Pulsed drain current: 435A
Power dissipation: 312W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMLL98N25JN WMx98N25JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 72A; Idm: 360A; 290W; TOLL
Case: TOLL
Mounting: SMD
Pulsed drain current: 360A
Power dissipation: 290W
Gate charge: 96nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 10.6mΩ
Reverse recovery time: 198ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMM020N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
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10+8.51 EUR
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WMM020N10HGS WMM020N10HGS.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 66 Stücke:
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25+3.47 EUR
26+3.32 EUR
30+2.89 EUR
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WMM030N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 19 Stücke:
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19+4.47 EUR
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WMM040N15HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 126A; Idm: 800A; 378.7W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 126A
Pulsed drain current: 800A
Power dissipation: 378.7W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 74.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 34 Stücke:
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15+5.81 EUR
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25+4.86 EUR
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WMM043N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 36 Stücke:
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36+2.37 EUR
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WMM048NV6HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W; TO263
Case: TO263
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
auf Bestellung 70 Stücke:
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66+1.3 EUR
70+1.21 EUR
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WMM053N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 164.5W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 82.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 28 Stücke:
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28+3.05 EUR
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WMM06N80M3 WMx06N80M3.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMM07N60C2 WMO07N60C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM07N65C2 WMx07N65C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM07N80M3 WMx07N80M3.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM09N60C2 WMx09N60C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
91+0.94 EUR
161+0.54 EUR
181+0.48 EUR
200+0.43 EUR
Mindestbestellmenge: 91 Stücke
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WMM09N65C2 WMx09N65C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 6A; 45W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 45W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 618 Stücke:
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91+0.94 EUR
155+0.55 EUR
173+0.49 EUR
191+0.44 EUR
Mindestbestellmenge: 91 Stücke
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WMM10N60C2 WMx10N60C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
91+0.94 EUR
124+0.69 EUR
140+0.61 EUR
155+0.55 EUR
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WMM10N65C2 WMx10N65C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 563 Stücke:
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91+0.94 EUR
121+0.7 EUR
137+0.62 EUR
152+0.56 EUR
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WMM10N70C2 WMx10N70C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM10N80M3 WMx10N80M3.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMM11N60C2 WMx11N60C2.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO263
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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