Produkte > WAYON > Alle Produkte des Herstellers WAYON (1584) > Seite 11 nach 27

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 7 8 9 10 11 12 13 14 15 16 18 20 22 24 26 27  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
WMJ53N65F2 WAYON WMJ53N65F2-CYG THT N channel transistors
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.9 EUR
10+7.15 EUR
11+6.51 EUR
900+4.68 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMJ60N60EM WMJ60N60EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMJ60N60EM WMJ60N60EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
3+23.84 EUR
10+12.16 EUR
30+10.88 EUR
120+10.08 EUR
300+9.61 EUR
900+8.99 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMJ69N30DMH WMJ69N30DMH WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMJ69N30DMH WMJ69N30DMH WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+23.84 EUR
10+7.15 EUR
30+4.52 EUR
90+4.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60C4 WMJ80N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EEF1F39AF1E80C4&compId=WMJ80N60C4.pdf?ci_sign=7ead3b04bb3dfa6f94eae41389d42abca306e18c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Reverse recovery time: 375ns
Pulsed drain current: 245A
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.81 EUR
7+10.27 EUR
10+7.71 EUR
30+6.94 EUR
120+6.42 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60C4 WMJ80N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EEF1F39AF1E80C4&compId=WMJ80N60C4.pdf?ci_sign=7ead3b04bb3dfa6f94eae41389d42abca306e18c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Reverse recovery time: 375ns
Pulsed drain current: 245A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.81 EUR
7+10.27 EUR
10+7.71 EUR
30+6.94 EUR
120+6.42 EUR
300+6.12 EUR
900+5.51 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60EM WMJ80N60EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 142nC
Pulsed drain current: 295A
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.75 EUR
4+19.93 EUR
10+14.79 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60EM WMJ80N60EM WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 142nC
Pulsed drain current: 295A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.75 EUR
4+19.93 EUR
10+14.79 EUR
30+13.36 EUR
120+12.37 EUR
300+11.83 EUR
900+11.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60F2 WMJ80N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Pulsed drain current: 245A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60F2 WMJ80N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Pulsed drain current: 245A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
4+17.88 EUR
10+10.21 EUR
30+9.19 EUR
120+8.51 EUR
300+8.11 EUR
900+7.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65C4 WAYON WMJ80N65C4-CYG THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.09 EUR
10+7.38 EUR
11+6.98 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65F2 WMJ80N65F2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087BFC5F071C0D3&compId=WMJ80N65F2.pdf?ci_sign=f874d423275e6f0a6769a5792cab93bd755bbb1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.04 EUR
12+6.12 EUR
13+5.78 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65F2 WMJ80N65F2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087BFC5F071C0D3&compId=WMJ80N65F2.pdf?ci_sign=f874d423275e6f0a6769a5792cab93bd755bbb1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 320 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.04 EUR
12+6.12 EUR
13+5.78 EUR
900+5.59 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80R350S WMJ80R350S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.52 EUR
14+5.22 EUR
23+3.2 EUR
24+3.03 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80R350S WMJ80R350S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.52 EUR
14+5.22 EUR
23+3.2 EUR
24+3.03 EUR
900+2.92 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ83N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ85N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EBCA25C8D0E0DF&compId=WMx85N20JN.pdf?ci_sign=8a36d449d26d3e5a72bcbacd22517098dc69a3d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60C4 WMJ90N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.08 EUR
9+7.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60C4 WMJ90N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.08 EUR
9+7.97 EUR
900+7.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60F2 WMJ90N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.23 EUR
9+8.41 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60F2 WMJ90N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
4+19.23 EUR
9+8.41 EUR
900+8.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65C4 WAYON WMJ90N65C4-CYG THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
4+23.25 EUR
8+8.94 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65F2 WAYON WMJ90N65F2-CYG THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.48 EUR
8+9.4 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR WMJ90N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ SR
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.74 EUR
10+7.54 EUR
11+7.12 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR WMJ90N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ SR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.74 EUR
10+7.54 EUR
11+7.12 EUR
300+6.95 EUR
900+6.85 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ93N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4 WMJ99N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.4 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4 WMJ99N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.4 EUR
10+13.8 EUR
30+12.48 EUR
120+11.5 EUR
300+10.95 EUR
900+10.28 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2 WMJ99N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.41 EUR
4+20.36 EUR
10+15.22 EUR
30+13.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2 WMJ99N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
3+25.41 EUR
4+20.36 EUR
10+15.22 EUR
30+13.69 EUR
120+12.7 EUR
300+12.16 EUR
900+11.34 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1 WAYON WMJ9N150D1-CYG THT N channel transistors
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.56 EUR
13+5.53 EUR
14+5.23 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1 WMJP32N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.76 EUR
16+4.62 EUR
21+3.46 EUR
25+3.12 EUR
125+2.89 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1 WMJP32N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 292 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.76 EUR
16+4.62 EUR
21+3.46 EUR
25+3.12 EUR
125+2.89 EUR
300+2.83 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK020N06HG4 WMK020N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK023N08HGS WAYON WMK023N08HGS-CYG THT N channel transistors
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.9 EUR
51+1.4 EUR
2000+1.24 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N08HGD WAYON WMK028N08HGD-CYG THT N channel transistors
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
17+4.2 EUR
46+1.56 EUR
2000+0.94 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HG2 WMK028N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS WMK028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
46+1.59 EUR
52+1.39 EUR
250+1.26 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS WMK028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.66 EUR
46+1.59 EUR
52+1.39 EUR
250+1.26 EUR
1000+1.22 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4 WMK030N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
75+0.96 EUR
85+0.85 EUR
250+0.76 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4 WMK030N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 376 Stücke:
Lieferzeit 7-14 Tag (e)
71+1.02 EUR
75+0.96 EUR
85+0.85 EUR
250+0.76 EUR
1000+0.73 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06LG4 WMK030N06LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS WMK036N12HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
48+1.52 EUR
54+1.33 EUR
250+1.22 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS WMK036N12HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
48+1.52 EUR
54+1.33 EUR
250+1.22 EUR
1000+1.16 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK040N08HGS WMK040N08HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 227.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 78.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS WMK043N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
67+1.07 EUR
86+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS WMK043N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 162 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
67+1.07 EUR
86+0.83 EUR
91+0.79 EUR
2000+0.76 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10LGS WMK043N10LGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4 WMK048NV6HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4 WMK048NV6HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4 WMK048NV6LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4 WMK048NV6LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS WMK053N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
96+0.75 EUR
115+0.62 EUR
250+0.56 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS WMK053N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 580 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
96+0.75 EUR
115+0.62 EUR
250+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053NV8HGS WAYON WMK053NV8HGS-CYG THT N channel transistors
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
119+0.6 EUR
2000+0.53 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK05N80M3 WMK05N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD96C17D86E00C4&compId=WMx05N80M3.pdf?ci_sign=414e10db88d3c05d3636355bc0f37d2c036298bc Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
51+1.41 EUR
64+1.13 EUR
117+0.62 EUR
123+0.58 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
WMK05N80M3 WMK05N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD96C17D86E00C4&compId=WMx05N80M3.pdf?ci_sign=414e10db88d3c05d3636355bc0f37d2c036298bc Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.7 EUR
51+1.41 EUR
64+1.13 EUR
117+0.62 EUR
123+0.58 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N08HG2 WAYON WMK060N08HG2-CYG THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.39 EUR
68+1.06 EUR
2000+0.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N10LGS WMK060N10LGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 116A; Idm: 464A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 116A
Pulsed drain current: 464A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMJ53N65F2
Hersteller: WAYON
WMJ53N65F2-CYG THT N channel transistors
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.9 EUR
10+7.15 EUR
11+6.51 EUR
900+4.68 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WMJ60N60EM
WMJ60N60EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMJ60N60EM
WMJ60N60EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
3+23.84 EUR
10+12.16 EUR
30+10.88 EUR
120+10.08 EUR
300+9.61 EUR
900+8.99 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WMJ69N30DMH
WMJ69N30DMH
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMJ69N30DMH
WMJ69N30DMH
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
3+23.84 EUR
10+7.15 EUR
30+4.52 EUR
90+4.4 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60C4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EEF1F39AF1E80C4&compId=WMJ80N60C4.pdf?ci_sign=7ead3b04bb3dfa6f94eae41389d42abca306e18c
WMJ80N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Reverse recovery time: 375ns
Pulsed drain current: 245A
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.81 EUR
7+10.27 EUR
10+7.71 EUR
30+6.94 EUR
120+6.42 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60C4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EEF1F39AF1E80C4&compId=WMJ80N60C4.pdf?ci_sign=7ead3b04bb3dfa6f94eae41389d42abca306e18c
WMJ80N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Reverse recovery time: 375ns
Pulsed drain current: 245A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 185 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.81 EUR
7+10.27 EUR
10+7.71 EUR
30+6.94 EUR
120+6.42 EUR
300+6.12 EUR
900+5.51 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60EM
WMJ80N60EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 142nC
Pulsed drain current: 295A
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.75 EUR
4+19.93 EUR
10+14.79 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60EM
WMJ80N60EM
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 142nC
Pulsed drain current: 295A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+24.75 EUR
4+19.93 EUR
10+14.79 EUR
30+13.36 EUR
120+12.37 EUR
300+11.83 EUR
900+11.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60F2
WMJ80N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Pulsed drain current: 245A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N60F2
WMJ80N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 103nC
Pulsed drain current: 245A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+17.88 EUR
10+10.21 EUR
30+9.19 EUR
120+8.51 EUR
300+8.11 EUR
900+7.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65C4
Hersteller: WAYON
WMJ80N65C4-CYG THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.09 EUR
10+7.38 EUR
11+6.98 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65F2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087BFC5F071C0D3&compId=WMJ80N65F2.pdf?ci_sign=f874d423275e6f0a6769a5792cab93bd755bbb1b
WMJ80N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.04 EUR
12+6.12 EUR
13+5.78 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80N65F2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087BFC5F071C0D3&compId=WMJ80N65F2.pdf?ci_sign=f874d423275e6f0a6769a5792cab93bd755bbb1b
WMJ80N65F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 320 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.04 EUR
12+6.12 EUR
13+5.78 EUR
900+5.59 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80R350S
WMJ80R350S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.52 EUR
14+5.22 EUR
23+3.2 EUR
24+3.03 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ80R350S
WMJ80R350S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.52 EUR
14+5.22 EUR
23+3.2 EUR
24+3.03 EUR
900+2.92 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
WMJ83N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 31A
Pulsed drain current: 145A
Power dissipation: 92W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ85N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EBCA25C8D0E0DF&compId=WMx85N20JN.pdf?ci_sign=8a36d449d26d3e5a72bcbacd22517098dc69a3d2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60C4
WMJ90N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.08 EUR
9+7.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60C4
WMJ90N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.08 EUR
9+7.97 EUR
900+7.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60F2
WMJ90N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.23 EUR
9+8.41 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60F2
WMJ90N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+19.23 EUR
9+8.41 EUR
900+8.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65C4
Hersteller: WAYON
WMJ90N65C4-CYG THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+23.25 EUR
8+8.94 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65F2
Hersteller: WAYON
WMJ90N65F2-CYG THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+24.48 EUR
8+9.4 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR
WMJ90N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ SR
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.74 EUR
10+7.54 EUR
11+7.12 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR
WMJ90N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ SR
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.74 EUR
10+7.54 EUR
11+7.12 EUR
300+6.95 EUR
900+6.85 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ93N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 42A
Pulsed drain current: 280A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4
WMJ99N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.4 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4
WMJ99N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+18.4 EUR
10+13.8 EUR
30+12.48 EUR
120+11.5 EUR
300+10.95 EUR
900+10.28 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2
WMJ99N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.41 EUR
4+20.36 EUR
10+15.22 EUR
30+13.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2
WMJ99N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+25.41 EUR
4+20.36 EUR
10+15.22 EUR
30+13.69 EUR
120+12.7 EUR
300+12.16 EUR
900+11.34 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1
Hersteller: WAYON
WMJ9N150D1-CYG THT N channel transistors
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.56 EUR
13+5.53 EUR
14+5.23 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1
WMJP32N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.76 EUR
16+4.62 EUR
21+3.46 EUR
25+3.12 EUR
125+2.89 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1
WMJP32N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 292 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.76 EUR
16+4.62 EUR
21+3.46 EUR
25+3.12 EUR
125+2.89 EUR
300+2.83 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK020N06HG4
WMK020N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK023N08HGS
Hersteller: WAYON
WMK023N08HGS-CYG THT N channel transistors
auf Bestellung 51 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.9 EUR
51+1.4 EUR
2000+1.24 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N08HGD
Hersteller: WAYON
WMK028N08HGD-CYG THT N channel transistors
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.15 EUR
17+4.2 EUR
46+1.56 EUR
2000+0.94 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HG2
WMK028N10HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS
WMK028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
46+1.59 EUR
52+1.39 EUR
250+1.26 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS
WMK028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.66 EUR
46+1.59 EUR
52+1.39 EUR
250+1.26 EUR
1000+1.22 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4
WMK030N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
75+0.96 EUR
85+0.85 EUR
250+0.76 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4
WMK030N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 376 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
71+1.02 EUR
75+0.96 EUR
85+0.85 EUR
250+0.76 EUR
1000+0.73 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06LG4
WMK030N06LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS
WMK036N12HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
48+1.52 EUR
54+1.33 EUR
250+1.22 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS
WMK036N12HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
45+1.62 EUR
48+1.52 EUR
54+1.33 EUR
250+1.22 EUR
1000+1.16 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
WMK040N08HGS
WMK040N08HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 227.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 78.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS
WMK043N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
67+1.07 EUR
86+0.83 EUR
91+0.79 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS
WMK043N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 162 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
64+1.13 EUR
67+1.07 EUR
86+0.83 EUR
91+0.79 EUR
2000+0.76 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10LGS
WMK043N10LGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4
WMK048NV6HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6HG4
WMK048NV6HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 28.5nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+5.96 EUR
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4
WMK048NV6LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK048NV6LG4
WMK048NV6LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 110A; Idm: 440A; 104.2W
Case: TO220-3
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 35nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 65V
Power dissipation: 104.2W
Pulsed drain current: 440A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
250+0.52 EUR
1000+0.5 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS
WMK053N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
96+0.75 EUR
115+0.62 EUR
250+0.56 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS
WMK053N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 580 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
74+0.97 EUR
96+0.75 EUR
115+0.62 EUR
250+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMK053NV8HGS
Hersteller: WAYON
WMK053NV8HGS-CYG THT N channel transistors
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
64+1.13 EUR
119+0.6 EUR
2000+0.53 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK05N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD96C17D86E00C4&compId=WMx05N80M3.pdf?ci_sign=414e10db88d3c05d3636355bc0f37d2c036298bc
WMK05N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
51+1.41 EUR
64+1.13 EUR
117+0.62 EUR
123+0.58 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
WMK05N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD96C17D86E00C4&compId=WMx05N80M3.pdf?ci_sign=414e10db88d3c05d3636355bc0f37d2c036298bc
WMK05N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 788 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.7 EUR
51+1.41 EUR
64+1.13 EUR
117+0.62 EUR
123+0.58 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N08HG2
Hersteller: WAYON
WMK060N08HG2-CYG THT N channel transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.39 EUR
68+1.06 EUR
2000+0.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N10LGS
WMK060N10LGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 116A; Idm: 464A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 116A
Pulsed drain current: 464A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 7 8 9 10 11 12 13 14 15 16 18 20 22 24 26 27  [ Nächste Seite >> ]