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WMJ80R260S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 78A
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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WMJ83N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 31A
Gate-source voltage: ±20V
Power dissipation: 92W
Pulsed drain current: 145A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
Reverse recovery time: 180ns
On-state resistance: 31mΩ
Produkt ist nicht verfügbar
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WMJ90N60F2 WMJ90N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.36 EUR
9+8.42 EUR
Mindestbestellmenge: 4
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WMJ90N65C4 WMJ90N65C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
4+22.04 EUR
8+9.38 EUR
9+8.87 EUR
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WMJ90N65SR WMJ90N65SR WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.02 EUR
10+7.55 EUR
11+7.14 EUR
120+6.86 EUR
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WMJ90R260S WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 50A
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
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WMJ93N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 180W
Pulsed drain current: 280A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 190ns
On-state resistance: 17mΩ
Produkt ist nicht verfügbar
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WMJ99N60C4 WMJ99N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 16 Stücke:
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3+24.5 EUR
7+10.71 EUR
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WMJ99N60F2 WMJ99N60F2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+27.04 EUR
6+12.5 EUR
7+11.81 EUR
Mindestbestellmenge: 3
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WMJ9N150D1 WMJ9N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Drain current: 9A
On-state resistance: 2.9Ω
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85.2nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 198 Stücke:
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6+11.94 EUR
8+9.54 EUR
13+5.52 EUR
14+5.21 EUR
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WMJP32N50D1 WMJP32N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.22 EUR
15+4.99 EUR
24+3.07 EUR
25+2.92 EUR
Mindestbestellmenge: 12
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WMK020N06HG4 WMK020N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK028N08HGD WMK028N08HGD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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20+3.58 EUR
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WMK028N10HG2 WMK028N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK028N10HGS WMK028N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
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41+1.76 EUR
43+1.69 EUR
55+1.3 EUR
58+1.24 EUR
Mindestbestellmenge: 41
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WMK030N06HG4 WMK030N06HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK030N06LG4 WMK030N06LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK036N12HGS WMK036N12HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
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14+5.11 EUR
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WMK040N08HGS WMK040N08HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 227.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 78.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK043N10HGS WMK043N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK043N10LGS WMK043N10LGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK053N10HGS WMK053N10HGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK05N80M3 WMK05N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD96C17D86E00C4&compId=WMx05N80M3.pdf?ci_sign=414e10db88d3c05d3636355bc0f37d2c036298bc Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
59+1.23 EUR
73+0.99 EUR
117+0.61 EUR
124+0.58 EUR
Mindestbestellmenge: 49
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WMK060N08HG2 WMK060N08HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; Idm: 278A; 86.2W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 41nC
On-state resistance: 6mΩ
Drain current: 95A
Drain-source voltage: 80V
Power dissipation: 86.2W
Pulsed drain current: 278A
auf Bestellung 30 Stücke:
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30+2.39 EUR
Mindestbestellmenge: 30
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WMK060N10LGS WMK060N10LGS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 116A; Idm: 464A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 116A
Pulsed drain current: 464A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
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28+2.56 EUR
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WMK06N80M3 WMK06N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
81+0.89 EUR
101+0.71 EUR
156+0.46 EUR
165+0.43 EUR
Mindestbestellmenge: 68
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WMK072N12LG2 WMK072N12LG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 108A; Idm: 432A; 173.6W
Mounting: THT
Drain-source voltage: 120V
Drain current: 108A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 173.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 432A
Case: TO220-3
auf Bestellung 50 Stücke:
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44+1.64 EUR
46+1.57 EUR
50+1.43 EUR
Mindestbestellmenge: 44
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WMK07N60C2 WMK07N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB6A0EE01400C4&compId=WMK07N60C2.pdf?ci_sign=eec5a663c8531624f4cccb3b1c3a86c0206e6efb Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMK07N65C2 WMK07N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB77A74DBCA0C4&compId=WMK07N65C2.pdf?ci_sign=993b814d510afec896a26820ed5fdc8f17d5ba03 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
76+0.95 EUR
96+0.75 EUR
128+0.56 EUR
153+0.47 EUR
162+0.44 EUR
Mindestbestellmenge: 64
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WMK07N70C2 WMK07N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB7DE5042480C4&compId=WMK07N70C2.pdf?ci_sign=b14b4cb35a5bc1d059ec54bf63b465b410689a47 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK07N80M3 WMK07N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK080N10LG2 WMK080N10LG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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47+1.52 EUR
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WMK08N80M3 WMK08N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB90B6AFB840C4&compId=WMx08N80M3.pdf?ci_sign=e645aed102b3924e9e6222dd0a497007367f86c4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK09N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 3.9nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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WMK09N60C2 WMK09N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB96FF4996A0C4&compId=WMK09N60C2.pdf?ci_sign=f97a5882064f47d4725c3b36f729e0b42c4e931b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
63+1.14 EUR
79+0.91 EUR
104+0.69 EUR
144+0.5 EUR
152+0.47 EUR
Mindestbestellmenge: 53
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WMK09N70C2 WMK09N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBA49C9B51E0C4&compId=WMK09N70C2.pdf?ci_sign=9278824a0a9a7d8c3a9504c2f7e27185a0d73eff Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK100N07TS WMK100N07TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Pulsed drain current: 400A
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.2 EUR
Mindestbestellmenge: 17
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WMK100N10TS WMK100N10TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
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23+3.1 EUR
Mindestbestellmenge: 23
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WMK10N70C2 WMK10N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBBE6561F0E0C4&compId=WMx10N70C2.pdf?ci_sign=7d2406cf9166ebde6c96098c8529a41344f7a76e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK10N80M3 WMK10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
38+1.93 EUR
47+1.54 EUR
75+0.96 EUR
80+0.9 EUR
Mindestbestellmenge: 32
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WMK110N20HG2 WMK110N20HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
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13+5.79 EUR
16+4.56 EUR
17+4.3 EUR
Mindestbestellmenge: 13
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WMK11N65C2 WMK11N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 8 Stücke:
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8+8.94 EUR
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WMK11N70C2 WMK11N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK13N50D1 WMK13N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 441 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
79+0.92 EUR
98+0.73 EUR
158+0.45 EUR
167+0.43 EUR
Mindestbestellmenge: 65
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WMK13N80M3 WMK13N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.15 EUR
21+3.46 EUR
26+2.76 EUR
49+1.49 EUR
52+1.4 EUR
Mindestbestellmenge: 18
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WMK14N60C2 WMK14N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.22 EUR
39+1.84 EUR
49+1.47 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 33
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WMK14N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D13C79D98E0D5&compId=WMx14N65C4.pdf?ci_sign=7d06778ea3b30f4c5290ba3e47c6d80aa415de0f Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
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WMK15N50D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK15N80M3 WMK15N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK161N15T2 WMK161N15T2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.1 EUR
30+2.43 EUR
32+2.3 EUR
250+2.22 EUR
Mindestbestellmenge: 24
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WMK16N10T1 WMK16N10T1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 20.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK16N60C2 WMK16N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED2364FEAD40C4&compId=WMx16N60C2.pdf?ci_sign=8a88713e21e0821e41674396660368ecad00022e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK16N60FD WMK16N60FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK16N65C2 WMK16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 416 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.75 EUR
32+2.29 EUR
40+1.83 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 27
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WMK16N65FD WMK16N65FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
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WMK175N10HG4 WMK175N10HG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
On-state resistance: 17mΩ
Gate-source voltage: ±20V
Drain current: 46A
Power dissipation: 73W
Drain-source voltage: 100V
Pulsed drain current: 184A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 17nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
Mindestbestellmenge: 50
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WMK175N10LG4 WMK175N10LG4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
On-state resistance: 17.5mΩ
Gate-source voltage: ±20V
Drain current: 46A
Power dissipation: 73W
Drain-source voltage: 100V
Pulsed drain current: 184A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 22.7nC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
Mindestbestellmenge: 41
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WMK18N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
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WMK18P10TS WMK18P10TS WAYON Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 75.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 75.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK190N03TS WMK190N03TS WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMJ80R260S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 78A
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ83N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 31A
Gate-source voltage: ±20V
Power dissipation: 92W
Pulsed drain current: 145A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
Reverse recovery time: 180ns
On-state resistance: 31mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N60F2
WMJ90N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+19.36 EUR
9+8.42 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65C4
WMJ90N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.04 EUR
8+9.38 EUR
9+8.87 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90N65SR
WMJ90N65SR
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.02 EUR
10+7.55 EUR
11+7.14 EUR
120+6.86 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMJ90R260S
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 50A
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ93N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 180W
Pulsed drain current: 280A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 190ns
On-state resistance: 17mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60C4
WMJ99N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 175nC
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.5 EUR
7+10.71 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ99N60F2
WMJ99N60F2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 350A
Gate charge: 174nC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+27.04 EUR
6+12.5 EUR
7+11.81 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WMJ9N150D1
WMJ9N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W
Mounting: THT
Drain current: 9A
On-state resistance: 2.9Ω
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 85.2nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.94 EUR
8+9.54 EUR
13+5.52 EUR
14+5.21 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMJP32N50D1
WMJP32N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.22 EUR
15+4.99 EUR
24+3.07 EUR
25+2.92 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WMK020N06HG4
WMK020N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 258A; Idm: 1032A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 258A
Pulsed drain current: 1032A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N08HGD
WMK028N08HGD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HG2
WMK028N10HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 245A; Idm: 780A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 245A
Pulsed drain current: 780A
Power dissipation: 278W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK028N10HGS
WMK028N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 257A; Idm: 1028A; 379W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 257A
Pulsed drain current: 1028A
Power dissipation: 379W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
43+1.69 EUR
55+1.3 EUR
58+1.24 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06HG4
WMK030N06HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 736A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 736A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK030N06LG4
WMK030N06LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 740A; 208.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 185A
Pulsed drain current: 740A
Power dissipation: 208.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Gate charge: 73.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK036N12HGS
WMK036N12HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 188A; Idm: 752A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 188A
Pulsed drain current: 752A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
WMK040N08HGS
WMK040N08HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; Idm: 720A; 227.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 227.3W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 78.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10HGS
WMK043N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 98.4nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK043N10LGS
WMK043N10LGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 111.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK053N10HGS
WMK053N10HGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 123A; Idm: 480A; 197.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 123A
Pulsed drain current: 480A
Power dissipation: 197.4W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 82.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK05N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD96C17D86E00C4&compId=WMx05N80M3.pdf?ci_sign=414e10db88d3c05d3636355bc0f37d2c036298bc
WMK05N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 4A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
59+1.23 EUR
73+0.99 EUR
117+0.61 EUR
124+0.58 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N08HG2
WMK060N08HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; Idm: 278A; 86.2W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 41nC
On-state resistance: 6mΩ
Drain current: 95A
Drain-source voltage: 80V
Power dissipation: 86.2W
Pulsed drain current: 278A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMK060N10LGS
WMK060N10LGS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 116A; Idm: 464A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 116A
Pulsed drain current: 464A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
WMK06N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf
WMK06N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
81+0.89 EUR
101+0.71 EUR
156+0.46 EUR
165+0.43 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
WMK072N12LG2
WMK072N12LG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 108A; Idm: 432A; 173.6W
Mounting: THT
Drain-source voltage: 120V
Drain current: 108A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 173.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 432A
Case: TO220-3
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
46+1.57 EUR
50+1.43 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB6A0EE01400C4&compId=WMK07N60C2.pdf?ci_sign=eec5a663c8531624f4cccb3b1c3a86c0206e6efb
WMK07N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB77A74DBCA0C4&compId=WMK07N65C2.pdf?ci_sign=993b814d510afec896a26820ed5fdc8f17d5ba03
WMK07N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Technology: WMOS™ C2
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
76+0.95 EUR
96+0.75 EUR
128+0.56 EUR
153+0.47 EUR
162+0.44 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB7DE5042480C4&compId=WMK07N70C2.pdf?ci_sign=b14b4cb35a5bc1d059ec54bf63b465b410689a47
WMK07N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 4A; 42W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 42W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK07N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430
WMK07N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ M3
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK080N10LG2
WMK080N10LG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41A; Idm: 328A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 41A
Pulsed drain current: 328A
Power dissipation: 108.7W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 30.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.52 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
WMK08N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB90B6AFB840C4&compId=WMx08N80M3.pdf?ci_sign=e645aed102b3924e9e6222dd0a497007367f86c4
WMK08N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK09N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 3.9nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK09N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB96FF4996A0C4&compId=WMK09N60C2.pdf?ci_sign=f97a5882064f47d4725c3b36f729e0b42c4e931b
WMK09N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 940mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
63+1.14 EUR
79+0.91 EUR
104+0.69 EUR
144+0.5 EUR
152+0.47 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
WMK09N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBA49C9B51E0C4&compId=WMK09N70C2.pdf?ci_sign=9278824a0a9a7d8c3a9504c2f7e27185a0d73eff
WMK09N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 5.3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N07TS
WMK100N07TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Power dissipation: 133W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Pulsed drain current: 400A
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
WMK100N10TS
WMK100N10TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 258.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBBE6561F0E0C4&compId=WMx10N70C2.pdf?ci_sign=7d2406cf9166ebde6c96098c8529a41344f7a76e
WMK10N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMK10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
38+1.93 EUR
47+1.54 EUR
75+0.96 EUR
80+0.9 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WMK110N20HG2
WMK110N20HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.79 EUR
16+4.56 EUR
17+4.3 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
WMK11N65C2
WMK11N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
WMK11N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2
WMK11N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK13N50D1
WMK13N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 441 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
79+0.92 EUR
98+0.73 EUR
158+0.45 EUR
167+0.43 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMK13N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6
WMK13N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
21+3.46 EUR
26+2.76 EUR
49+1.49 EUR
52+1.4 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85
WMK14N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
39+1.84 EUR
49+1.47 EUR
80+0.9 EUR
84+0.86 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
WMK14N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D13C79D98E0D5&compId=WMx14N65C4.pdf?ci_sign=7d06778ea3b30f4c5290ba3e47c6d80aa415de0f
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK15N50D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 15A; Idm: 60A; 156W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK15N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256
WMK15N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK161N15T2
WMK161N15T2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 161A; Idm: 540A; 365W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 161A
Pulsed drain current: 540A
Power dissipation: 365W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 78nC
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
30+2.43 EUR
32+2.3 EUR
250+2.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N10T1
WMK16N10T1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.8A; Idm: 63.2A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 44.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 20.6nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED2364FEAD40C4&compId=WMx16N60C2.pdf?ci_sign=8a88713e21e0821e41674396660368ecad00022e
WMK16N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N60FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24
WMK16N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMK16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 416 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.75 EUR
32+2.29 EUR
40+1.83 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc
WMK16N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK175N10HG4
WMK175N10HG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
On-state resistance: 17mΩ
Gate-source voltage: ±20V
Drain current: 46A
Power dissipation: 73W
Drain-source voltage: 100V
Pulsed drain current: 184A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 17nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WMK175N10LG4
WMK175N10LG4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 73W; TO220-3
On-state resistance: 17.5mΩ
Gate-source voltage: ±20V
Drain current: 46A
Power dissipation: 73W
Drain-source voltage: 100V
Pulsed drain current: 184A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 22.7nC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
WMK18N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO220-3
Case: TO220-3
Mounting: THT
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMK18P10TS
WMK18P10TS
Hersteller: WAYON
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 75.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 75.8W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMK190N03TS
WMK190N03TS
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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