Produkte > WEEN SEMICONDUCTORS > Alle Produkte des Herstellers WEEN SEMICONDUCTORS (5941) > Seite 17 nach 100
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WNSC12650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC12650T6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 12A 5DFN |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
BYV430J-600PQ | WeEn Semiconductors |
Description: DIODE ARRAY GP 600V 30A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-3P Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 3838 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BYV415J-600PQ | WeEn Semiconductors | Description: DIODE TO3PF STANDARD M |
Produkt ist nicht verfügbar |
||||||||||||||||||
WG50N65DHWQ | WeEn Semiconductors |
Description: IGBT TRENCH FS 650V 91A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 66ns/163ns Switching Energy: 1.7mJ (on), 600µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 91 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 278 W |
auf Bestellung 556 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA206X-800CT/L02Q | WeEn Semiconductors |
Description: TRIAC 800V 6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
auf Bestellung 7197 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA425Z-800CTQ | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 25A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-3P Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 800 V |
auf Bestellung 69 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UD4X | WeEn Semiconductors |
Description: THE ESDALD05UD4 IS DESIGNED TO P Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 88W Power Line Protection: Yes Part Status: Active |
auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UD4X | WeEn Semiconductors |
Description: THE ESDALD05UD4 IS DESIGNED TO P Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 88W Power Line Protection: Yes Part Status: Active |
auf Bestellung 47446 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UE2X | WeEn Semiconductors |
Description: TVS DIODE 5VWM 15VC SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-3L Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: Yes Part Status: Active |
auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UE2X | WeEn Semiconductors |
Description: TVS DIODE 5VWM 15VC SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-3L Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: Yes Part Status: Active |
auf Bestellung 78879 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UG4X | WeEn Semiconductors |
Description: THE ESDALD05UG4 IS A LOW CAPACIT Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN2510 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: No Part Status: Active |
auf Bestellung 87000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UG4X | WeEn Semiconductors |
Description: THE ESDALD05UG4 IS A LOW CAPACIT Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: DVI, HDMI, USB Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN2510 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 60W Power Line Protection: No Part Status: Active |
auf Bestellung 88595 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC20650W-AQ | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
auf Bestellung 480 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
WNSC6D20650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 20A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 526 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC6D10650Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 935 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC16650CWQ | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
WNSC2D16650CWQ | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
BTA308X-800C0,127 | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
auf Bestellung 16103 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA330-800BTQ | WeEn Semiconductors | Description: TRIAC 800V 30A TO220AB |
Produkt ist nicht verfügbar |
||||||||||||||||||
NXPSC20650W6Q | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 20A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
auf Bestellung 707 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC051200Q | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
auf Bestellung 65 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC08650B6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A D2PAK |
auf Bestellung 3165 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BUJ303AX,127 | WeEn Semiconductors |
Description: TRANS NPN 500V 5A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V Supplier Device Package: TO-220F Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 32 W |
auf Bestellung 7439 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
MCR100W-10MF | WeEn Semiconductors |
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 90 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.45 V Current - Off State (Max): 1 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 1.25 A Voltage - Off State: 1 kV |
Produkt ist nicht verfügbar |
||||||||||||||||||
MCR100W-10MF | WeEn Semiconductors |
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 90 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.45 V Current - Off State (Max): 1 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 1.25 A Voltage - Off State: 1 kV |
Produkt ist nicht verfügbar |
||||||||||||||||||
BYC30X-600PSQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 30A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 23963 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BYC30JT-600PSQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 30A TO3PF Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UJ2X | WeEn Semiconductors |
Description: THE ESDALD05UJ2 IS A LOW CAPACIT Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 1.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-143 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 136W Power Line Protection: Yes Part Status: Active |
auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDALD05UJ2X | WeEn Semiconductors |
Description: THE ESDALD05UJ2 IS A LOW CAPACIT Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 1.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-143 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 136W Power Line Protection: Yes Part Status: Active |
auf Bestellung 82513 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ACTT4S-800E,118 | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
auf Bestellung 58852 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
MUR560J | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 5A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 64 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
auf Bestellung 17293 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BYV10MX-600PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 10A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 12015 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDHD05UFX | WeEn Semiconductors |
Description: THE ESDHD05UF IS DESIGNED TO PRO Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 320W Power Line Protection: No Part Status: Active |
auf Bestellung 280000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
ESDHD05UFX | WeEn Semiconductors |
Description: THE ESDHD05UF IS DESIGNED TO PRO Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 320W Power Line Protection: No Part Status: Active |
auf Bestellung 298655 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC2D16650CJQ | WeEn Semiconductors |
Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 2369 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BT151-650LTFQ | WeEn Semiconductors |
Description: PLANAR PASSIVATED SILICON CONTRO Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - On State (It (AV)) (Max): 7.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 650 V |
auf Bestellung 5498 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BT151Y-650LTFQ | WeEn Semiconductors |
Description: PLANAR PASSIVATED SILICON CONTRO Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - On State (It (AV)) (Max): 7.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 650 V |
auf Bestellung 5995 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BT134W-800EF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 2A SC73 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 8 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BT134W-800EF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 2A SC73 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 8 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
auf Bestellung 23050 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC2D20650CJQ | WeEn Semiconductors |
Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Tape & Reel (TR) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC2D20650CJQ | WeEn Semiconductors |
Description: DIODE ARR SIC SCHOT 650V TO3PF Packaging: Cut Tape (CT) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
BYR29X-600,127 | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 8A TO220FP Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BYR29X-800,127 | WeEn Semiconductors | Description: DIODE GEN PURP 800V 8A TO220FP |
auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BYR29X-800PQ | WeEn Semiconductors |
Description: DIODE GEN PURP 800V 8A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
WNSC2D30650CWQ | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 2697 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC2D30650WQ | WeEn Semiconductors |
Description: SILICON CARBIDE SCHOTTKY DI Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 980pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 1025 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC06650D6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A DPAK |
auf Bestellung 6834 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC08650X6Q | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A TO220F Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
auf Bestellung 2986 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC08650D6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A DPAK |
auf Bestellung 7184 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC06650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A D2PAK |
auf Bestellung 3190 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC12650B6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NXPSC12650B6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE |
auf Bestellung 6298 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC6D20650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 4800 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
WNSC6D20650B6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 5108 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA202W-1000ETF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA202W-1000ETF | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A SC73 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
auf Bestellung 15950 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA203-800ETQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 3A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 3 A Voltage - Off State: 800 V |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA203-800ETQP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 800V 3A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 3 A Voltage - Off State: 800 V |
auf Bestellung 9866 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
BTA202-1000ETEP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
|
WNSC12650T6J |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Description: DIODE SIL CARBIDE 650V 12A 5DFN
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 4.77 EUR |
WNSC12650T6J |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Description: DIODE SIL CARBIDE 650V 12A 5DFN
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)BYV430J-600PQ |
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY GP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3838 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.59 EUR |
10+ | 4.65 EUR |
100+ | 3.7 EUR |
500+ | 3.13 EUR |
1000+ | 2.65 EUR |
2000+ | 2.52 EUR |
BYV415J-600PQ |
Hersteller: WeEn Semiconductors
Description: DIODE TO3PF STANDARD M
Description: DIODE TO3PF STANDARD M
Produkt ist nicht verfügbar
WG50N65DHWQ |
Hersteller: WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
Description: IGBT TRENCH FS 650V 91A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
auf Bestellung 556 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 8.35 EUR |
30+ | 6.62 EUR |
120+ | 5.67 EUR |
510+ | 5.04 EUR |
BTA206X-800CT/L02Q |
Hersteller: WeEn Semiconductors
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
auf Bestellung 7197 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2 EUR |
50+ | 1.65 EUR |
100+ | 1.2 EUR |
500+ | 1 EUR |
1000+ | 0.85 EUR |
2000+ | 0.76 EUR |
5000+ | 0.72 EUR |
BTA425Z-800CTQ |
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
auf Bestellung 69 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.67 EUR |
10+ | 4.71 EUR |
ESDALD05UD4X |
Hersteller: WeEn Semiconductors
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
9000+ | 0.13 EUR |
ESDALD05UD4X |
Hersteller: WeEn Semiconductors
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UD4 IS DESIGNED TO P
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 47446 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.86 EUR |
44+ | 0.6 EUR |
100+ | 0.3 EUR |
500+ | 0.25 EUR |
1000+ | 0.18 EUR |
ESDALD05UE2X |
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
9000+ | 0.13 EUR |
ESDALD05UE2X |
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5VWM 15VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 78879 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.86 EUR |
44+ | 0.6 EUR |
100+ | 0.3 EUR |
500+ | 0.25 EUR |
1000+ | 0.18 EUR |
ESDALD05UG4X |
Hersteller: WeEn Semiconductors
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
auf Bestellung 87000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
9000+ | 0.14 EUR |
30000+ | 0.13 EUR |
75000+ | 0.11 EUR |
ESDALD05UG4X |
Hersteller: WeEn Semiconductors
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
Description: THE ESDALD05UG4 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
auf Bestellung 88595 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
41+ | 0.64 EUR |
100+ | 0.32 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
NXPSC20650W-AQ |
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 480 Stücke:
Lieferzeit 21-28 Tag (e)WNSC6D20650WQ |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 526 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.55 EUR |
10+ | 14.04 EUR |
100+ | 11.62 EUR |
500+ | 10.12 EUR |
WNSC6D10650Q |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 935 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.7 EUR |
10+ | 6.47 EUR |
100+ | 5.24 EUR |
500+ | 4.66 EUR |
WNSC16650CWQ |
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
WNSC2D16650CWQ |
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARR SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
BTA308X-800C0,127 |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
auf Bestellung 16103 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.48 EUR |
50+ | 1.24 EUR |
100+ | 0.9 EUR |
500+ | 0.75 EUR |
1000+ | 0.64 EUR |
2000+ | 0.57 EUR |
5000+ | 0.54 EUR |
10000+ | 0.5 EUR |
BTA330-800BTQ |
Hersteller: WeEn Semiconductors
Description: TRIAC 800V 30A TO220AB
Description: TRIAC 800V 30A TO220AB
Produkt ist nicht verfügbar
NXPSC20650W6Q |
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 707 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 20.85 EUR |
10+ | 17.89 EUR |
100+ | 14.9 EUR |
500+ | 13.15 EUR |
WNSC051200Q |
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 65 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.4 EUR |
10+ | 12.93 EUR |
NXPSC08650B6J |
Hersteller: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 8A D2PAK
Description: DIODE SCHOTTKY 650V 8A D2PAK
auf Bestellung 3165 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.18 EUR |
10+ | 11.84 EUR |
100+ | 9.7 EUR |
BUJ303AX,127 |
Hersteller: WeEn Semiconductors
Description: TRANS NPN 500V 5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
Supplier Device Package: TO-220F
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 32 W
Description: TRANS NPN 500V 5A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
Supplier Device Package: TO-220F
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 32 W
auf Bestellung 7439 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
908+ | 0.79 EUR |
MCR100W-10MF |
Hersteller: WeEn Semiconductors
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
MCR100W-10MF |
Hersteller: WeEn Semiconductors
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
BYC30X-600PSQ |
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 23963 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.72 EUR |
10+ | 3.32 EUR |
100+ | 2.59 EUR |
500+ | 2.14 EUR |
1000+ | 1.69 EUR |
2000+ | 1.64 EUR |
BYC30JT-600PSQ |
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.19 EUR |
10+ | 3.75 EUR |
100+ | 2.93 EUR |
500+ | 2.42 EUR |
1000+ | 1.91 EUR |
2000+ | 1.85 EUR |
ESDALD05UJ2X |
Hersteller: WeEn Semiconductors
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.24 EUR |
9000+ | 0.21 EUR |
ESDALD05UJ2X |
Hersteller: WeEn Semiconductors
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
Description: THE ESDALD05UJ2 IS A LOW CAPACIT
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 82513 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
34+ | 0.79 EUR |
100+ | 0.4 EUR |
500+ | 0.35 EUR |
1000+ | 0.27 EUR |
ACTT4S-800E,118 |
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
auf Bestellung 58852 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.87 EUR |
16+ | 1.63 EUR |
100+ | 1.13 EUR |
500+ | 0.94 EUR |
1000+ | 0.8 EUR |
MUR560J |
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 17293 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
29+ | 0.9 EUR |
100+ | 0.62 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
BYV10MX-600PQ |
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 12015 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.4 EUR |
50+ | 1.1 EUR |
100+ | 0.82 EUR |
500+ | 0.64 EUR |
1000+ | 0.52 EUR |
2000+ | 0.46 EUR |
5000+ | 0.44 EUR |
10000+ | 0.41 EUR |
ESDHD05UFX |
Hersteller: WeEn Semiconductors
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
auf Bestellung 280000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.075 EUR |
30000+ | 0.067 EUR |
50000+ | 0.06 EUR |
100000+ | 0.056 EUR |
250000+ | 0.055 EUR |
ESDHD05UFX |
Hersteller: WeEn Semiconductors
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
Description: THE ESDHD05UF IS DESIGNED TO PRO
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
auf Bestellung 298655 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.55 EUR |
53+ | 0.49 EUR |
100+ | 0.27 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
2000+ | 0.096 EUR |
5000+ | 0.086 EUR |
WNSC2D16650CJQ |
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2369 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.61 EUR |
10+ | 8.9 EUR |
100+ | 7.2 EUR |
500+ | 6.4 EUR |
1000+ | 5.48 EUR |
2000+ | 5.16 EUR |
BT151-650LTFQ |
Hersteller: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
auf Bestellung 5498 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.38 EUR |
50+ | 1.13 EUR |
100+ | 0.82 EUR |
500+ | 0.68 EUR |
1000+ | 0.58 EUR |
2000+ | 0.52 EUR |
5000+ | 0.49 EUR |
BT151Y-650LTFQ |
Hersteller: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
auf Bestellung 5995 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.72 EUR |
50+ | 1.43 EUR |
100+ | 1.04 EUR |
500+ | 0.87 EUR |
1000+ | 0.74 EUR |
2000+ | 0.66 EUR |
5000+ | 0.62 EUR |
BT134W-800EF |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.33 EUR |
8000+ | 0.32 EUR |
12000+ | 0.29 EUR |
BT134W-800EF |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
auf Bestellung 23050 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 1.25 EUR |
28+ | 0.96 EUR |
100+ | 0.58 EUR |
500+ | 0.53 EUR |
1000+ | 0.36 EUR |
2000+ | 0.33 EUR |
WNSC2D20650CJQ |
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tape & Reel (TR)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Tape & Reel (TR)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
480+ | 7.76 EUR |
960+ | 6.64 EUR |
2400+ | 6.26 EUR |
WNSC2D20650CJQ |
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Cut Tape (CT)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC SCHOT 650V TO3PF
Packaging: Cut Tape (CT)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)BYR29X-600,127 |
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 8A TO220FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
556+ | 1.33 EUR |
BYR29X-800,127 |
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP
Description: DIODE GEN PURP 800V 8A TO220FP
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.02 EUR |
10+ | 2.7 EUR |
100+ | 2.11 EUR |
500+ | 1.74 EUR |
BYR29X-800PQ |
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
WNSC2D30650CWQ |
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2697 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.15 EUR |
30+ | 12.9 EUR |
120+ | 11.54 EUR |
510+ | 10.18 EUR |
1020+ | 9.17 EUR |
2010+ | 8.59 EUR |
WNSC2D30650WQ |
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE SCHOTTKY DI
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: SILICON CARBIDE SCHOTTKY DI
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 1025 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.42 EUR |
30+ | 12.3 EUR |
120+ | 11.01 EUR |
510+ | 9.71 EUR |
1020+ | 8.74 EUR |
NXPSC06650D6J |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Description: DIODE SIL CARBIDE 650V 6A DPAK
auf Bestellung 6834 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.33 EUR |
10+ | 8.39 EUR |
100+ | 6.88 EUR |
500+ | 5.85 EUR |
1000+ | 5.13 EUR |
NXPSC08650X6Q |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 2986 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.48 EUR |
10+ | 11.22 EUR |
100+ | 9.19 EUR |
500+ | 7.82 EUR |
1000+ | 6.86 EUR |
NXPSC08650D6J |
Hersteller: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 8A DPAK
Description: DIODE SCHOTTKY 650V 8A DPAK
auf Bestellung 7184 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.84 EUR |
10+ | 11.55 EUR |
100+ | 9.46 EUR |
500+ | 8.05 EUR |
1000+ | 7.06 EUR |
NXPSC06650B6J |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A D2PAK
Description: DIODE SIL CARBIDE 650V 6A D2PAK
auf Bestellung 3190 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.65 EUR |
10+ | 8.68 EUR |
100+ | 7.11 EUR |
NXPSC12650B6J |
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 5600 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 11.21 EUR |
1600+ | 9.84 EUR |
NXPSC12650B6J |
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 6298 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 17.91 EUR |
10+ | 16.07 EUR |
100+ | 13.17 EUR |
WNSC6D20650B6J |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 4800 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 7.35 EUR |
1600+ | 6.3 EUR |
2400+ | 5.93 EUR |
WNSC6D20650B6J |
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 5108 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.19 EUR |
10+ | 10.23 EUR |
100+ | 8.27 EUR |
BTA202W-1000ETF |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.36 EUR |
8000+ | 0.34 EUR |
12000+ | 0.32 EUR |
BTA202W-1000ETF |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
auf Bestellung 15950 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
29+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
2000+ | 0.36 EUR |
BTA203-800ETQP |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.36 EUR |
6000+ | 0.34 EUR |
BTA203-800ETQP |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 3A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 27A, 30A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 3 A
Voltage - Off State: 800 V
auf Bestellung 9866 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
29+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
BTA202-1000ETEP |
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.34 EUR |