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WNSC06650T6J WNSC06650T6J WeEn Semiconductors WNSC06650T.pdf Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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WNSC08650T6J WNSC08650T6J WeEn Semiconductors WNSC08650T.pdf Description: SILICON CARBIDE POWER DIODE
Produkt ist nicht verfügbar
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WNSC10650T6J WNSC10650T6J WeEn Semiconductors WNSC10650T.pdf Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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BTA416X-800BTQ BTA416X-800BTQ WeEn Semiconductors BTA416X-800BT.pdf Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 5659 Stücke:
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50+1.04 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.61 EUR
5000+0.55 EUR
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BTA416X-800CTQ BTA416X-800CTQ WeEn Semiconductors BTA416X-800CT.pdf Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 6774 Stücke:
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1000+0.66 EUR
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5000+0.55 EUR
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BYC30-600P,127 BYC30-600P,127 WeEn Semiconductors byc30-600p.pdf Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7879 Stücke:
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500+2 EUR
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2000+1.74 EUR
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors byc30-1200p.pdf Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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BYC30W-1200PQ BYC30W-1200PQ WeEn Semiconductors byc30w-1200p.pdf Description: DIODE STANDARD 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 383 Stücke:
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30+3.45 EUR
120+2.82 EUR
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BYC30DW-600PQ BYC30DW-600PQ WeEn Semiconductors byc30dw-600p.pdf Description: DIODE STANDARD 600V 30A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BYC30W-600PT2Q BYC30W-600PT2Q WeEn Semiconductors byc30w-600pt2.pdf Description: DIODE STANDARD 600V 30A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1765 Stücke:
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10+3.11 EUR
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900+1.63 EUR
1350+1.57 EUR
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NCR100W-12LX NCR100W-12LX WeEn Semiconductors ncr100w-12l.pdf Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
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NCR100W-12MX NCR100W-12MX WeEn Semiconductors ncr100w-12m.pdf Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
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BYV10ED-600PJ BYV10ED-600PJ WeEn Semiconductors byv10ed-600p.pdf Description: DIODE STANDARD 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2500 Stücke:
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2500+0.47 EUR
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NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Description: DIODE SCHOTTKY 650V 4A DPAK
auf Bestellung 16439 Stücke:
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4+4.79 EUR
10+4.3 EUR
100+3.45 EUR
500+2.84 EUR
1000+2.36 EUR
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NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Description: DIODE SIL CARBIDE 650V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 3090 Stücke:
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10+3.36 EUR
100+2.43 EUR
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors nxpsc10650d.pdf Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 7204 Stücke:
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500+4.14 EUR
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NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors nxpsc10650b.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 2290 Stücke:
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10+6.15 EUR
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NXPSC106506Q NXPSC106506Q WeEn Semiconductors nxpsc10650.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 3000 Stücke:
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500+4.13 EUR
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors nxpsc10650x.pdf Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 2995 Stücke:
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100+4.57 EUR
500+4.13 EUR
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NXPSC10650Q NXPSC10650Q WeEn Semiconductors nxpsc10650.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 1000 Stücke:
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2+9.47 EUR
10+6.36 EUR
100+4.59 EUR
500+3.84 EUR
1000+3.75 EUR
Mindestbestellmenge: 2
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WNSC10650WQ WNSC10650WQ WeEn Semiconductors WNSC10650W_0.pdf Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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NUR460/L03,112 NUR460/L03,112 WeEn Semiconductors NUR460.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460P,133 NUR460P,133 WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460P/L01U NUR460P/L01U WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460P/L02U NUR460P/L02U WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460P/L03U NUR460P/L03U WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460P/L04U NUR460P/L04U WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460P/L05U NUR460P/L05U WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
Produkt ist nicht verfügbar
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NUR460P/L06U NUR460P/L06U WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460P/L07U NUR460P/L07U WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NUR460PU NUR460PU WeEn Semiconductors NUR460P.pdf Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC16650B6J NXPSC16650B6J WeEn Semiconductors NXPSC16650B6J.pdf Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors wns30h100cb.pdf Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4800 Stücke:
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800+0.75 EUR
1600+0.69 EUR
2400+0.66 EUR
4000+0.64 EUR
Mindestbestellmenge: 800
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WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors wns30h100cb.pdf Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 5562 Stücke:
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7+2.6 EUR
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WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2500 Stücke:
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WNSC2D08650DJ WNSC2D08650DJ WeEn Semiconductors WNSC2D08650D.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 7463 Stücke:
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100+2 EUR
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1000+1.5 EUR
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WNSC2D08650TJ WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D08650TJ WNSC2D08650TJ WeEn Semiconductors WNSC2D08650T.pdf Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
OT415Q OT415Q WeEn Semiconductors Description: OT415/SIL3P/STANDARD MARKING *
auf Bestellung 4982 Stücke:
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WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors wns20s100cb.pdf Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 2400 Stücke:
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800+0.51 EUR
1600+0.47 EUR
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WNS20S100CBJ WNS20S100CBJ WeEn Semiconductors wns20s100cb.pdf Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 3054 Stücke:
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100+0.79 EUR
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WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors wns20h100cb.pdf Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS20H100CBJ WNS20H100CBJ WeEn Semiconductors wns20h100cb.pdf Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 302 Stücke:
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WNS20S100CQ WNS20S100CQ WeEn Semiconductors wns20s100c.pdf Description: DIODE ARR SCHOTT 100V 10A TO220E
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220E
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 5861 Stücke:
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50+0.67 EUR
100+0.6 EUR
500+0.48 EUR
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WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors wns40h100cb.pdf Description: DIODE ARRAY SCHOT 100V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4000 Stücke:
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WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors wns40h100cb.pdf Description: DIODE ARRAY SCHOT 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4843 Stücke:
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5+3.54 EUR
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BYV410X-600,127 BYV410X-600,127 WeEn Semiconductors byv410x-600.pdf Description: DIODE ARRAY GP 600V 10A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 5286 Stücke:
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5+4.19 EUR
50+2.06 EUR
100+1.85 EUR
500+1.48 EUR
1000+1.37 EUR
2000+1.27 EUR
5000+1.2 EUR
Mindestbestellmenge: 5
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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors actt4s-800e.pdf Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
auf Bestellung 55000 Stücke:
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Mindestbestellmenge: 2500
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BYC75W-1200PQ BYC75W-1200PQ WeEn Semiconductors byc75w-1200p.pdf Description: DIODE GEN PURP 1.2KV 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 67 Stücke:
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TOPT12-800C0,127 TOPT12-800C0,127 WeEn Semiconductors topt12-800c0.pdf Description: TRIAC 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 104A
Voltage - Gate Trigger (Vgt) (Max): 2.3 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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TOPT16-800C0,127 TOPT16-800C0,127 WeEn Semiconductors topt16-800c0.pdf Description: TOPT16-800C0,127 SIL3P
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6-800CNQ ACTT6-800CNQ WeEn Semiconductors actt6-800cn.pdf Description: TRIAC SENS GATE 800V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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WNSC04650T6J WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Description: SILICON CARBIDE POWER DIODE
Produkt ist nicht verfügbar
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NXPSC206506Q NXPSC206506Q WeEn Semiconductors nxpsc20650.pdf Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 3211 Stücke:
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10+12.12 EUR
100+10.03 EUR
500+8.74 EUR
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NXPSC06650B6J NXPSC06650B6J WeEn Semiconductors nxpsc06650b.pdf Description: DIODE SIL CARBIDE 650V 6A D2PAK
auf Bestellung 1600 Stücke:
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800+4.1 EUR
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BT155W-1400TQ BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 715A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.4 kV
auf Bestellung 894 Stücke:
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30+4.32 EUR
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BTA330X-800BTQ BTA330X-800BTQ WeEn Semiconductors bta330x-800bt.pdf Description: TRIAC 800V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 270A, 297A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
auf Bestellung 2969 Stücke:
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5+4.22 EUR
50+2.07 EUR
100+1.86 EUR
500+1.49 EUR
1000+1.38 EUR
2000+1.28 EUR
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NCR100Q-6MX WeEn Semiconductors NCR100Q-6M_0.pdf Description: SCR 600V 800MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 mA
Supplier Device Package: SOT-89
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CWQ WeEn Semiconductors WNSC2D20650CW.pdf Description: DIODE ARRAY SIC 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.73 EUR
30+4.66 EUR
120+3.95 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D201200WQ WNSC2D201200WQ WeEn Semiconductors WNSC2D201200W.pdf Description: DIODE SIL CARB 1200V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.17 EUR
10+9.71 EUR
100+7.2 EUR
600+6.39 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WNSC06650T6J WNSC06650T.pdf
WNSC06650T6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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WNSC08650T6J WNSC08650T.pdf
WNSC08650T6J
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC10650T6J WNSC10650T.pdf
WNSC10650T6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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BTA416X-800BTQ BTA416X-800BT.pdf
BTA416X-800BTQ
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 5659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
50+1.04 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.61 EUR
5000+0.55 EUR
Mindestbestellmenge: 8
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BTA416X-800CTQ BTA416X-800CT.pdf
BTA416X-800CTQ
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 6774 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
50+1.04 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.61 EUR
5000+0.55 EUR
Mindestbestellmenge: 8
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BYC30-600P,127 byc30-600p.pdf
BYC30-600P,127
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 7879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.39 EUR
50+2.71 EUR
100+2.45 EUR
500+2 EUR
1000+1.85 EUR
2000+1.74 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BYC30-1200PQ byc30-1200p.pdf
BYC30-1200PQ
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC30W-1200PQ byc30w-1200p.pdf
BYC30W-1200PQ
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 1200V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 383 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
30+3.45 EUR
120+2.82 EUR
Mindestbestellmenge: 3
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BYC30DW-600PQ byc30dw-600p.pdf
BYC30DW-600PQ
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 30A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC30W-600PT2Q byc30w-600pt2.pdf
BYC30W-600PT2Q
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 30A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+3.11 EUR
450+1.77 EUR
900+1.63 EUR
1350+1.57 EUR
Mindestbestellmenge: 4
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NCR100W-12LX ncr100w-12l.pdf
NCR100W-12LX
Hersteller: WeEn Semiconductors
Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCR100W-12MX ncr100w-12m.pdf
NCR100W-12MX
Hersteller: WeEn Semiconductors
Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV10ED-600PJ byv10ed-600p.pdf
BYV10ED-600PJ
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.47 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Hersteller: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 4A DPAK
auf Bestellung 16439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+4.3 EUR
100+3.45 EUR
500+2.84 EUR
1000+2.36 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+3.36 EUR
100+2.43 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC10650D6J nxpsc10650d.pdf
NXPSC10650D6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 7204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.1 EUR
10+6.8 EUR
100+4.93 EUR
500+4.14 EUR
1000+4.08 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC10650B6J nxpsc10650b.pdf
NXPSC10650B6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 2290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
10+6.15 EUR
100+4.61 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC106506Q nxpsc10650.pdf
NXPSC106506Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.68 EUR
50+4.95 EUR
100+4.57 EUR
500+4.13 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC10650X6Q nxpsc10650x.pdf
NXPSC10650X6Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.68 EUR
10+6.1 EUR
100+4.57 EUR
500+4.13 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC10650Q nxpsc10650.pdf
NXPSC10650Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.47 EUR
10+6.36 EUR
100+4.59 EUR
500+3.84 EUR
1000+3.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WNSC10650WQ WNSC10650W_0.pdf
WNSC10650WQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460/L03,112 NUR460.pdf
NUR460/L03,112
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P,133 NUR460P.pdf
NUR460P,133
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P/L01U NUR460P.pdf
NUR460P/L01U
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P/L02U NUR460P.pdf
NUR460P/L02U
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P/L03U NUR460P.pdf
NUR460P/L03U
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P/L04U NUR460P.pdf
NUR460P/L04U
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P/L05U NUR460P.pdf
NUR460P/L05U
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P/L06U NUR460P.pdf
NUR460P/L06U
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460P/L07U NUR460P.pdf
NUR460P/L07U
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUR460PU NUR460P.pdf
NUR460PU
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 4A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC16650B6J NXPSC16650B6J.pdf
NXPSC16650B6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS30H100CBJ wns30h100cb.pdf
WNS30H100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.75 EUR
1600+0.69 EUR
2400+0.66 EUR
4000+0.64 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
WNS30H100CBJ wns30h100cb.pdf
WNS30H100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 5562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
11+1.65 EUR
100+1.1 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D08650DJ WNSC2D08650D.pdf
WNSC2D08650DJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 7463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.47 EUR
10+2.9 EUR
100+2 EUR
500+1.62 EUR
1000+1.5 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D08650TJ WNSC2D08650T.pdf
WNSC2D08650TJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D08650TJ WNSC2D08650T.pdf
WNSC2D08650TJ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
OT415Q
OT415Q
Hersteller: WeEn Semiconductors
Description: OT415/SIL3P/STANDARD MARKING *
auf Bestellung 4982 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CBJ wns20s100cb.pdf
WNS20S100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.51 EUR
1600+0.47 EUR
2400+0.45 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CBJ wns20s100cb.pdf
WNS20S100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 3054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.2 EUR
100+0.79 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WNS20H100CBJ wns20h100cb.pdf
WNS20H100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNS20H100CBJ wns20h100cb.pdf
WNS20H100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.33 EUR
100+0.88 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
WNS20S100CQ wns20s100c.pdf
WNS20S100CQ
Hersteller: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 10A TO220E
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220E
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 5861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
50+0.67 EUR
100+0.6 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.4 EUR
5000+0.36 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
WNS40H100CBJ wns40h100cb.pdf
WNS40H100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.16 EUR
1600+1.07 EUR
2400+1.02 EUR
4000+0.97 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
WNS40H100CBJ wns40h100cb.pdf
WNS40H100CBJ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SCHOT 100V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.27 EUR
100+1.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BYV410X-600,127 byv410x-600.pdf
BYV410X-600,127
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY GP 600V 10A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 5286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
50+2.06 EUR
100+1.85 EUR
500+1.48 EUR
1000+1.37 EUR
2000+1.27 EUR
5000+1.2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
ACTT4S-800E,118 actt4s-800e.pdf
ACTT4S-800E,118
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.42 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BYC75W-1200PQ byc75w-1200p.pdf
BYC75W-1200PQ
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 1.2KV 75A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TOPT12-800C0,127 topt12-800c0.pdf
TOPT12-800C0,127
Hersteller: WeEn Semiconductors
Description: TRIAC 800V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 104A
Voltage - Gate Trigger (Vgt) (Max): 2.3 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TOPT16-800C0,127 topt16-800c0.pdf
TOPT16-800C0,127
Hersteller: WeEn Semiconductors
Description: TOPT16-800C0,127 SIL3P
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ACTT6-800CNQ actt6-800cn.pdf
ACTT6-800CNQ
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 66A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC04650T6J WNSC04650T.pdf
WNSC04650T6J
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC206506Q nxpsc20650.pdf
NXPSC206506Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 3211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.41 EUR
10+12.12 EUR
100+10.03 EUR
500+8.74 EUR
1000+8.13 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC06650B6J nxpsc06650b.pdf
NXPSC06650B6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A D2PAK
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4.1 EUR
1600+3.59 EUR
Mindestbestellmenge: 800
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BT155W-1400TQ BT155W-1400T.pdf
BT155W-1400TQ
Hersteller: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 715A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.4 kV
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
30+4.32 EUR
120+3.56 EUR
510+3 EUR
Mindestbestellmenge: 3
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BTA330X-800BTQ bta330x-800bt.pdf
BTA330X-800BTQ
Hersteller: WeEn Semiconductors
Description: TRIAC 800V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 270A, 297A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
50+2.07 EUR
100+1.86 EUR
500+1.49 EUR
1000+1.38 EUR
2000+1.28 EUR
Mindestbestellmenge: 5
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NCR100Q-6MX NCR100Q-6M_0.pdf
Hersteller: WeEn Semiconductors
Description: SCR 600V 800MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 mA
Supplier Device Package: SOT-89
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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WNSC2D20650CWQ WNSC2D20650CW.pdf
WNSC2D20650CWQ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.73 EUR
30+4.66 EUR
120+3.95 EUR
Mindestbestellmenge: 3
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WNSC2D201200WQ WNSC2D201200W.pdf
WNSC2D201200WQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.17 EUR
10+9.71 EUR
100+7.2 EUR
600+6.39 EUR
Mindestbestellmenge: 2
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