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WNSC2D201200WQ WNSC2D201200WQ WeEn Semiconductors WNSC2D201200W.pdf Description: DIODE SIL CARB 1200V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.17 EUR
10+9.71 EUR
100+7.2 EUR
600+6.39 EUR
Mindestbestellmenge: 2
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WNSC2D201200CWQ WNSC2D201200CWQ WeEn Semiconductors WNSC2D201200CW.pdf Description: DIODE ARR SIC 1200V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Produkt ist nicht verfügbar
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WNSC04650T6J WNSC04650T6J WeEn Semiconductors WNSC04650T.pdf Description: SILICON CARBIDE POWER DIODE
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.73 EUR
10+3.35 EUR
100+2.69 EUR
500+2.21 EUR
1000+1.84 EUR
Mindestbestellmenge: 5
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WNSC06650T6J WNSC06650T6J WeEn Semiconductors WNSC06650T.pdf Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2 Stücke:
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WNSC08650T6J WNSC08650T6J WeEn Semiconductors WNSC08650T.pdf Description: SILICON CARBIDE POWER DIODE
auf Bestellung 2876 Stücke:
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4+5.56 EUR
10+5.01 EUR
100+4.1 EUR
500+3.49 EUR
1000+3.06 EUR
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WNSC12650WQ WeEn Semiconductors WNSC12650W_2.pdf Description: DIODE SIL CARB 650V 12A TO247-2
auf Bestellung 1197 Stücke:
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3+6.76 EUR
10+6.08 EUR
100+4.98 EUR
500+4.24 EUR
1000+3.72 EUR
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BYV10ED-600PJ BYV10ED-600PJ WeEn Semiconductors byv10ed-600p.pdf Description: DIODE STANDARD 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4562 Stücke:
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20+0.92 EUR
24+0.76 EUR
100+0.68 EUR
500+0.56 EUR
1000+0.47 EUR
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BTA425Z-800BTQ BTA425Z-800BTQ WeEn Semiconductors BTA425Z-800BT.pdf Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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BYV30JT-600PQ BYV30JT-600PQ WeEn Semiconductors byv30jt-600p.pdf Description: DIODE GEN PURP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3840 Stücke:
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6+3.2 EUR
10+2.65 EUR
480+1.79 EUR
960+1.52 EUR
2400+1.44 EUR
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BYV30W-600PQ WeEn Semiconductors byv30w-600p.pdf Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BYV30X-600PQ WeEn Semiconductors byv30x-600p.pdf Description: DIODE GEN PURP 600V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BTA208X-1000C0/L01127 BTA208X-1000C0/L01127 WeEn Semiconductors BTA208X-1000C0.pdf Description: NOW WEEN - BTA208X-1000C0 - 3 QU
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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WDMF75M16T WeEn Semiconductors WDMF75M16.pdf Description: THREE PHASE RECTIFIER BRIDGE
auf Bestellung 3 Stücke:
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1+58.04 EUR
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BYV40W-600PQ BYV40W-600PQ WeEn Semiconductors byv40w-600p.pdf Description: DIODE GEN PURP 600V 40A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 79 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
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WNSC12650T6J WeEn Semiconductors WNSC12650T_0.pdf Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.95 EUR
10+4.11 EUR
100+3.02 EUR
500+2.54 EUR
1000+2.51 EUR
Mindestbestellmenge: 3
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BYV430J-600PQ WeEn Semiconductors byv430j-600p.pdf Description: DIODE ARRAY GP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3838 Stücke:
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5+3.78 EUR
10+3.15 EUR
100+2.5 EUR
500+2.12 EUR
1000+1.8 EUR
2000+1.71 EUR
Mindestbestellmenge: 5
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BYV415J-600PQ WeEn Semiconductors BYV415J-600P.pdf Description: DIODE ARRAYTO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Produkt ist nicht verfügbar
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WG50N65DHWQ WG50N65DHWQ WeEn Semiconductors WG50N65DHW.pdf Description: IGBT TRENCH FS 650V 91A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
auf Bestellung 411 Stücke:
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3+6.48 EUR
30+3.83 EUR
120+3.22 EUR
Mindestbestellmenge: 3
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BTA206X-800CT/L02Q BTA206X-800CT/L02Q WeEn Semiconductors bta206x-800ct.pdf Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
auf Bestellung 7197 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
50+0.77 EUR
100+0.69 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.47 EUR
5000+0.42 EUR
Mindestbestellmenge: 12
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BTA425Z-800CTQ BTA425Z-800CTQ WeEn Semiconductors BTA425Z-800CT.pdf Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.93 EUR
Mindestbestellmenge: 4
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ESDALD05UD4X ESDALD05UD4X WeEn Semiconductors ESDALD05UD4.pdf Description: TVS DIODE 5VWM 16VC SOT236L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.099 EUR
9000+0.094 EUR
15000+0.088 EUR
21000+0.067 EUR
Mindestbestellmenge: 3000
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ESDALD05UD4X ESDALD05UD4X WeEn Semiconductors ESDALD05UD4.pdf Description: TVS DIODE 5VWM 16VC SOT236L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 35698 Stücke:
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34+0.53 EUR
50+0.36 EUR
155+0.11 EUR
Mindestbestellmenge: 34
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ESDALD05UE2X ESDALD05UE2X WeEn Semiconductors ESDALD05UE2_0.pdf Description: TVS DIODE 5VWM 15VC SOT233L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.088 EUR
6000+0.08 EUR
9000+0.075 EUR
15000+0.07 EUR
21000+0.067 EUR
Mindestbestellmenge: 3000
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ESDALD05UE2X ESDALD05UE2X WeEn Semiconductors ESDALD05UE2_0.pdf Description: TVS DIODE 5VWM 15VC SOT233L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 69775 Stücke:
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48+0.37 EUR
71+0.25 EUR
191+0.093 EUR
500+0.09 EUR
Mindestbestellmenge: 48
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ESDALD05UG4X ESDALD05UG4X WeEn Semiconductors ESDALD05UG4.pdf Description: TVS DIODE 5VWM 15VC DFN2510
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.098 EUR
9000+0.093 EUR
15000+0.088 EUR
21000+0.084 EUR
30000+0.081 EUR
Mindestbestellmenge: 3000
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ESDALD05UG4X ESDALD05UG4X WeEn Semiconductors ESDALD05UG4.pdf Description: TVS DIODE 5VWM 15VC DFN2510
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
auf Bestellung 40173 Stücke:
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44+0.4 EUR
65+0.27 EUR
125+0.14 EUR
500+0.13 EUR
Mindestbestellmenge: 44
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NXPSC20650W-AQ WeEn Semiconductors NXPSC20650W-A.pdf Description: SILICON CARBIDE POWER DIODE
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
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WNSC6D20650WQ WNSC6D20650WQ WeEn Semiconductors WNSC6D20650W.pdf Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.23 EUR
30+7.1 EUR
120+5.97 EUR
Mindestbestellmenge: 2
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WNSC6D10650Q WNSC6D10650Q WeEn Semiconductors WNSC6D10650.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 880 Stücke:
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3+6.46 EUR
50+3.02 EUR
100+2.78 EUR
500+2.29 EUR
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WNSC16650CWQ WNSC16650CWQ WeEn Semiconductors WNSC16650CW_0.pdf Description: DIODE ARRAY SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
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WNSC2D16650CWQ WNSC2D16650CWQ WeEn Semiconductors WNSC2D16650CW.pdf Description: DIODE ARRAY SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
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BTA308X-800C0,127 BTA308X-800C0,127 WeEn Semiconductors BTA308X-800C0.pdf Description: TRIAC ALTERNISTOR 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
auf Bestellung 15951 Stücke:
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50+0.63 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
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5000+0.35 EUR
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BTA330-800BTQ BTA330-800BTQ WeEn Semiconductors bta330-800bt.pdf Description: TRIAC 800V 30A TO220AB
Produkt ist nicht verfügbar
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NXPSC20650W6Q NXPSC20650W6Q WeEn Semiconductors nxpsc20650w.pdf Description: DIODE ARRAY SIC 650V 20A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 707 Stücke:
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WNSC051200Q WeEn Semiconductors WNSC051200.pdf Description: SILICON CARBIDE POWER DIODE
auf Bestellung 65 Stücke:
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10+8.75 EUR
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NXPSC08650B6J NXPSC08650B6J WeEn Semiconductors nxpsc08650b.pdf Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 3160 Stücke:
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10+6.33 EUR
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MCR100W-10MF MCR100W-10MF WeEn Semiconductors MCR100W-10M_0.pdf Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
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MCR100W-10MF MCR100W-10MF WeEn Semiconductors MCR100W-10M_0.pdf Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
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BYC30X-600PSQ BYC30X-600PSQ WeEn Semiconductors BYC30X-600PS.pdf Description: DIODE STANDARD 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 21084 Stücke:
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6+3.08 EUR
50+1.1 EUR
100+1.03 EUR
500+0.86 EUR
1000+0.85 EUR
5000+0.81 EUR
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BYC30JT-600PSQ WeEn Semiconductors BYC30JT-600PS.PDF Description: DIODE STANDARD 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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ESDALD05UJ2X ESDALD05UJ2X WeEn Semiconductors ESDALD05UJ2.pdf Description: TVS DIODE 5VWM 17VC SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 72000 Stücke:
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3000+0.18 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 3000
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ESDALD05UJ2X ESDALD05UJ2X WeEn Semiconductors ESDALD05UJ2.pdf Description: TVS DIODE 5VWM 17VC SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 81323 Stücke:
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23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors actt4s-800e.pdf Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
auf Bestellung 58832 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
23+0.77 EUR
100+0.54 EUR
500+0.45 EUR
1000+0.42 EUR
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MUR560J MUR560J WeEn Semiconductors mur560.pdf Description: DIODE STANDARD 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 13483 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17
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BYV10MX-600PQ BYV10MX-600PQ WeEn Semiconductors BYV10MX-600P.pdf Description: DIODE STANDARD 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD05UFX ESDHD05UFX WeEn Semiconductors ESDHD05UF%20%281%29.pdf Description: TVS DIODE 5VWM 16VC DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
auf Bestellung 270000 Stücke:
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10000+0.033 EUR
20000+0.03 EUR
30000+0.029 EUR
50000+0.028 EUR
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ESDHD05UFX ESDHD05UFX WeEn Semiconductors ESDHD05UF%20%281%29.pdf Description: TVS DIODE 5VWM 16VC DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
auf Bestellung 296652 Stücke:
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59+0.3 EUR
102+0.17 EUR
164+0.11 EUR
500+0.078 EUR
1000+0.069 EUR
2000+0.061 EUR
5000+0.052 EUR
Mindestbestellmenge: 59
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WNSC2D16650CJQ WNSC2D16650CJQ WeEn Semiconductors WNSC2D16650CJ%20%281%29.pdf Description: DIODE ARRAY SIC 650V 16A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.99 EUR
30+4.18 EUR
120+3.53 EUR
Mindestbestellmenge: 3
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BT151-650LTFQ BT151-650LTFQ WeEn Semiconductors BT151-650LTF.pdf Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
auf Bestellung 5462 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
50+0.66 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.37 EUR
5000+0.33 EUR
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BT151Y-650LTFQ BT151Y-650LTFQ WeEn Semiconductors BT151Y-650LTF.pdf Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
auf Bestellung 5972 Stücke:
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11+1.74 EUR
50+0.81 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.46 EUR
5000+0.41 EUR
Mindestbestellmenge: 11
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BT134W-800EF BT134W-800EF WeEn Semiconductors BT134W-800E.pdf Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.22 EUR
Mindestbestellmenge: 4000
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BT134W-800EF BT134W-800EF WeEn Semiconductors BT134W-800E.pdf Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
auf Bestellung 6555 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
30+0.6 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
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WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Description: DIODE ARRAY SIC 650V 20A TO-3PF
Packaging: Tape & Reel (TR)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D20650CJQ WNSC2D20650CJQ WeEn Semiconductors WNSC2D20650CJ%20%281%29.pdf Description: DIODE ARRAY SIC 650V 20A TO-3PF
Packaging: Cut Tape (CT)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
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BYR29X-600,127 BYR29X-600,127 WeEn Semiconductors PHGLS22105-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD 600V 8A TO220FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
456+0.99 EUR
Mindestbestellmenge: 456
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BYR29X-800,127 BYR29X-800,127 WeEn Semiconductors byr29x-800.pdf Description: DIODE GEN PURP 800V 8A TO220FP
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
10+1.83 EUR
100+1.43 EUR
500+1.18 EUR
Mindestbestellmenge: 9
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BYR29X-800PQ WeEn Semiconductors byr29x-800p.pdf Description: DIODE GEN PURP 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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WNSC2D30650CWQ WNSC2D30650CWQ WeEn Semiconductors WNSC2D30650CW.pdf Description: DIODE ARRAY SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2218 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.43 EUR
30+5.29 EUR
Mindestbestellmenge: 3
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WNSC2D30650WQ WNSC2D30650WQ WeEn Semiconductors WNSC2D30650W.pdf Description: DIODE SIL CARB 650V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.86 EUR
30+6.87 EUR
120+5.78 EUR
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WNSC2D201200WQ WNSC2D201200W.pdf
WNSC2D201200WQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 1200V 20A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 845pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.17 EUR
10+9.71 EUR
100+7.2 EUR
600+6.39 EUR
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WNSC2D201200CWQ WNSC2D201200CW.pdf
WNSC2D201200CWQ
Hersteller: WeEn Semiconductors
Description: DIODE ARR SIC 1200V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Produkt ist nicht verfügbar
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WNSC04650T6J WNSC04650T.pdf
WNSC04650T6J
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+3.35 EUR
100+2.69 EUR
500+2.21 EUR
1000+1.84 EUR
Mindestbestellmenge: 5
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WNSC06650T6J WNSC06650T.pdf
WNSC06650T6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 2 Stücke:
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WNSC08650T6J WNSC08650T.pdf
WNSC08650T6J
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+5.01 EUR
100+4.1 EUR
500+3.49 EUR
1000+3.06 EUR
Mindestbestellmenge: 4
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WNSC12650WQ WNSC12650W_2.pdf
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 12A TO247-2
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
10+6.08 EUR
100+4.98 EUR
500+4.24 EUR
1000+3.72 EUR
Mindestbestellmenge: 3
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BYV10ED-600PJ byv10ed-600p.pdf
BYV10ED-600PJ
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 4562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
24+0.76 EUR
100+0.68 EUR
500+0.56 EUR
1000+0.47 EUR
Mindestbestellmenge: 20
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BTA425Z-800BTQ BTA425Z-800BT.pdf
BTA425Z-800BTQ
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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BYV30JT-600PQ byv30jt-600p.pdf
BYV30JT-600PQ
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.65 EUR
480+1.79 EUR
960+1.52 EUR
2400+1.44 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BYV30W-600PQ byv30w-600p.pdf
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BYV30X-600PQ byv30x-600p.pdf
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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BTA208X-1000C0/L01127 BTA208X-1000C0.pdf
BTA208X-1000C0/L01127
Hersteller: WeEn Semiconductors
Description: NOW WEEN - BTA208X-1000C0 - 3 QU
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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WDMF75M16T WDMF75M16.pdf
Hersteller: WeEn Semiconductors
Description: THREE PHASE RECTIFIER BRIDGE
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.04 EUR
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BYV40W-600PQ byv40w-600p.pdf
BYV40W-600PQ
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 600V 40A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 79 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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WNSC12650T6J WNSC12650T_0.pdf
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC12650T6J WNSC12650T_0.pdf
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
10+4.11 EUR
100+3.02 EUR
500+2.54 EUR
1000+2.51 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BYV430J-600PQ byv430j-600p.pdf
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY GP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+3.15 EUR
100+2.5 EUR
500+2.12 EUR
1000+1.8 EUR
2000+1.71 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BYV415J-600PQ BYV415J-600P.pdf
Hersteller: WeEn Semiconductors
Description: DIODE ARRAYTO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Produkt ist nicht verfügbar
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WG50N65DHWQ WG50N65DHW.pdf
WG50N65DHWQ
Hersteller: WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
auf Bestellung 411 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.48 EUR
30+3.83 EUR
120+3.22 EUR
Mindestbestellmenge: 3
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BTA206X-800CT/L02Q bta206x-800ct.pdf
BTA206X-800CT/L02Q
Hersteller: WeEn Semiconductors
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
auf Bestellung 7197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
50+0.77 EUR
100+0.69 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.47 EUR
5000+0.42 EUR
Mindestbestellmenge: 12
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BTA425Z-800CTQ BTA425Z-800CT.pdf
BTA425Z-800CTQ
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 275A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-3P
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UD4X ESDALD05UD4.pdf
ESDALD05UD4X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 16VC SOT236L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.099 EUR
9000+0.094 EUR
15000+0.088 EUR
21000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UD4X ESDALD05UD4.pdf
ESDALD05UD4X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 16VC SOT236L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 88W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 35698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
155+0.11 EUR
Mindestbestellmenge: 34
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ESDALD05UE2X ESDALD05UE2_0.pdf
ESDALD05UE2X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC SOT233L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.088 EUR
6000+0.08 EUR
9000+0.075 EUR
15000+0.07 EUR
21000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UE2X ESDALD05UE2_0.pdf
ESDALD05UE2X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC SOT233L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3L
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 69775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
71+0.25 EUR
191+0.093 EUR
500+0.09 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UG4X ESDALD05UG4.pdf
ESDALD05UG4X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC DFN2510
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.098 EUR
9000+0.093 EUR
15000+0.088 EUR
21000+0.084 EUR
30000+0.081 EUR
Mindestbestellmenge: 3000
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ESDALD05UG4X ESDALD05UG4.pdf
ESDALD05UG4X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 15VC DFN2510
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Active
auf Bestellung 40173 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
65+0.27 EUR
125+0.14 EUR
500+0.13 EUR
Mindestbestellmenge: 44
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NXPSC20650W-AQ NXPSC20650W-A.pdf
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
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WNSC6D20650WQ WNSC6D20650W.pdf
WNSC6D20650WQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.23 EUR
30+7.1 EUR
120+5.97 EUR
Mindestbestellmenge: 2
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WNSC6D10650Q WNSC6D10650.pdf
WNSC6D10650Q
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
50+3.02 EUR
100+2.78 EUR
500+2.29 EUR
Mindestbestellmenge: 3
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WNSC16650CWQ WNSC16650CW_0.pdf
WNSC16650CWQ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
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WNSC2D16650CWQ WNSC2D16650CW.pdf
WNSC2D16650CWQ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTA308X-800C0,127 BTA308X-800C0.pdf
BTA308X-800C0,127
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 65A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
auf Bestellung 15951 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
50+0.63 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
2000+0.36 EUR
5000+0.35 EUR
Mindestbestellmenge: 13
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BTA330-800BTQ bta330-800bt.pdf
BTA330-800BTQ
Hersteller: WeEn Semiconductors
Description: TRIAC 800V 30A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC20650W6Q nxpsc20650w.pdf
NXPSC20650W6Q
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.35 EUR
10+10.53 EUR
240+7.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
WNSC051200Q WNSC051200.pdf
Hersteller: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.75 EUR
10+8.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NXPSC08650B6J nxpsc08650b.pdf
NXPSC08650B6J
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 3160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.53 EUR
10+6.33 EUR
100+5.12 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MCR100W-10MF MCR100W-10M_0.pdf
MCR100W-10MF
Hersteller: WeEn Semiconductors
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCR100W-10MF MCR100W-10M_0.pdf
MCR100W-10MF
Hersteller: WeEn Semiconductors
Description: MCR100W-10M/SC-73/REEL 13" Q1/T1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 90 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23A @ 50Hz, 25A @ 60Hz
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 1 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYC30X-600PSQ BYC30X-600PS.pdf
BYC30X-600PSQ
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 21084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
50+1.1 EUR
100+1.03 EUR
500+0.86 EUR
1000+0.85 EUR
5000+0.81 EUR
Mindestbestellmenge: 6
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BYC30JT-600PSQ BYC30JT-600PS.PDF
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UJ2X ESDALD05UJ2.pdf
ESDALD05UJ2X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 17VC SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ESDALD05UJ2X ESDALD05UJ2.pdf
ESDALD05UJ2X
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 17VC SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-143
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 136W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 81323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
ACTT4S-800E,118 actt4s-800e.pdf
ACTT4S-800E,118
Hersteller: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 39A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
auf Bestellung 58832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
23+0.77 EUR
100+0.54 EUR
500+0.45 EUR
1000+0.42 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
MUR560J mur560.pdf
MUR560J
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 13483 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BYV10MX-600PQ BYV10MX-600P.pdf
BYV10MX-600PQ
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD05UFX ESDHD05UF%20%281%29.pdf
ESDHD05UFX
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 16VC DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.033 EUR
20000+0.03 EUR
30000+0.029 EUR
50000+0.028 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
ESDHD05UFX ESDHD05UF%20%281%29.pdf
ESDHD05UFX
Hersteller: WeEn Semiconductors
Description: TVS DIODE 5VWM 16VC DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 320W
Power Line Protection: No
Part Status: Active
auf Bestellung 296652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
102+0.17 EUR
164+0.11 EUR
500+0.078 EUR
1000+0.069 EUR
2000+0.061 EUR
5000+0.052 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D16650CJQ WNSC2D16650CJ%20%281%29.pdf
WNSC2D16650CJQ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 16A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.99 EUR
30+4.18 EUR
120+3.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BT151-650LTFQ BT151-650LTF.pdf
BT151-650LTFQ
Hersteller: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
auf Bestellung 5462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
50+0.66 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.37 EUR
5000+0.33 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BT151Y-650LTFQ BT151Y-650LTF.pdf
BT151Y-650LTFQ
Hersteller: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
auf Bestellung 5972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
50+0.81 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.46 EUR
5000+0.41 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
BT134W-800EF BT134W-800E.pdf
BT134W-800EF
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.22 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BT134W-800EF BT134W-800E.pdf
BT134W-800EF
Hersteller: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 800V 2A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 8 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
auf Bestellung 6555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.6 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO-3PF
Packaging: Tape & Reel (TR)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D20650CJQ WNSC2D20650CJ%20%281%29.pdf
WNSC2D20650CJQ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO-3PF
Packaging: Cut Tape (CT)
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYR29X-600,127 PHGLS22105-1.pdf?t.download=true&u=5oefqw
BYR29X-600,127
Hersteller: WeEn Semiconductors
Description: DIODE STANDARD 600V 8A TO220FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
456+0.99 EUR
Mindestbestellmenge: 456
Im Einkaufswagen  Stück im Wert von  UAH
BYR29X-800,127 byr29x-800.pdf
BYR29X-800,127
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
10+1.83 EUR
100+1.43 EUR
500+1.18 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BYR29X-800PQ byr29x-800p.pdf
Hersteller: WeEn Semiconductors
Description: DIODE GEN PURP 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D30650CWQ WNSC2D30650CW.pdf
WNSC2D30650CWQ
Hersteller: WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
auf Bestellung 2218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.43 EUR
30+5.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
WNSC2D30650WQ WNSC2D30650W.pdf
WNSC2D30650WQ
Hersteller: WeEn Semiconductors
Description: DIODE SIL CARB 650V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 980pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.86 EUR
30+6.87 EUR
120+5.78 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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