Produkte > ALPHA & OMEGA SEMICONDUCTOR INC. > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR INC. (3920) > Seite 34 nach 66
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AON7611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active |
auf Bestellung 32349 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7700 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 16A/40A 8DFNMounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 26W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
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AON7702 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/36A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 23W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON7702A_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/36A 8DFNPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON7702B | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 13.5A/20A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON7752 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/16A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON7752_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 15A/16A 8DFN |
Produkt ist nicht verfügbar |
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AON7754 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 24A/32A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 70W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON7758 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 36A/75A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 4.2W (Ta), 34W (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON7758_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 36A/75A 8DFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V Power Dissipation (Max): 4.2W (Ta), 34W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON7760 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 25V 33A/75A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 4.1W (Ta), 34.5W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON7764 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 30A/32A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 4.2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON7784 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 31A/50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON7788 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 20A/40A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AON7804 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 9A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
auf Bestellung 426604 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7804 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 9A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
auf Bestellung 425000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7804_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 9A/22A 8DFNPart Status: Obsolete Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.1W (Ta), 17W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON7804_102 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 9A 8DFNPackaging: Bulk Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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AON7810 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 6A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7810 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 6A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
auf Bestellung 20089 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7812 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 6A |
Produkt ist nicht verfügbar |
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AON7820 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8DFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AON7826 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 9A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Current - Continuous Drain (Id) @ 25°C: 9A Drain to Source Voltage (Vdss): 20V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 1.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 9A, 10V |
Produkt ist nicht verfügbar |
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AON7900 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 8A/13A 8DFNSupplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2.3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A, 13A Drain to Source Voltage (Vdss): 30V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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AON7900 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 8A/13A 8DFNSupplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2.3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A, 13A Drain to Source Voltage (Vdss): 30V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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AON7902 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 8A/13A 8DFNMounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2.3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A, 13A Drain to Source Voltage (Vdss): 30V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) |
Produkt ist nicht verfügbar |
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AON7932 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AON7932_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFNPackaging: Bulk Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AON7934 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 13A/15A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 15A Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AON7934 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 13A/15A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 15A Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7934_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 13A 8DFNPackaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AON7934_102 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 13A 8DFNPackaging: Bulk Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AONA66813 | Alpha & Omega Semiconductor Inc. |
Description: 80V N-CHANNEL ALPHASGT2 TMPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AONA66813 | Alpha & Omega Semiconductor Inc. |
Description: 80V N-CHANNEL ALPHASGT2 TMPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V |
auf Bestellung 455 Stücke: Lieferzeit 10-14 Tag (e) |
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| AONA66916 | Alpha & Omega Semiconductor Inc. |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AONA66916 | Alpha & Omega Semiconductor Inc. |
Description: LINEAR IC Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 7.5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V |
auf Bestellung 4690 Stücke: Lieferzeit 10-14 Tag (e) |
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AOND32324 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 13A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AOND32324 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 13A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) |
auf Bestellung 2978 Stücke: Lieferzeit 10-14 Tag (e) |
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AOND62930 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 100V 4.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 7.3W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AONH36328 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 13.8A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AONH36334 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AONL32328 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N/2P-CH 30V 8A 12DFN Supplier Device Package: 12-DFN-EP (4x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N and 2 P-Channel Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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AONL32328 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N/2P-CH 30V 8A 12DFN Supplier Device Package: 12-DFN-EP (4x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N and 2 P-Channel Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 9592 Stücke: Lieferzeit 10-14 Tag (e) |
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AONP36320 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 26A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Ta), 50W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AONP36332 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 24A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AONP36332 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 24A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) |
auf Bestellung 2932 Stücke: Lieferzeit 10-14 Tag (e) |
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AONP36336 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 50A 8DFNSupplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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AONP36336 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 50A 8DFNPackage / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount |
auf Bestellung 14084 Stücke: Lieferzeit 10-14 Tag (e) |
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| AONR20485 | Alpha & Omega Semiconductor Inc. |
Description: SINGLEInput Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN-EP (3x3) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AONR21117 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 26.5A/34A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21117 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 26.5A/34A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V |
auf Bestellung 30024 Stücke: Lieferzeit 10-14 Tag (e) |
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| AONR21305C | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8DFNPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AONR21307 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 24A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V |
auf Bestellung 62015 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21307 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 24A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V Power Dissipation (Max): 5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AONR21311C | Alpha & Omega Semiconductor Inc. |
Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 11W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AONR21321 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 24A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21321 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 24A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V |
auf Bestellung 11492 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21357 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/34A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AONR21357 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 21A/34A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V |
auf Bestellung 1271 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON7611 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
auf Bestellung 32349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 20+ | 1.11 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2000+ | 0.45 EUR |
| AON7611 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.4 EUR |
| 10000+ | 0.37 EUR |
| 15000+ | 0.36 EUR |
| 25000+ | 0.35 EUR |
| AON7700 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A/40A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 16A/40A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7702 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/36A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 13.5A/36A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7702A_101 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/36A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/36A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7702B |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 13.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7752 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/16A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V
Description: MOSFET N-CH 30V 15A/16A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7752_101 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 15A/16A 8DFN
Description: MOSFET N-CH 30V 15A/16A 8DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7754 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 24A/32A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 70W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 24A/32A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 70W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7758 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 36A/75A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 36A/75A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7758_001 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 36A/75A 8DFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Description: MOSFET N-CH 30V 36A/75A 8DFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7760 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 25V 33A/75A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 34.5W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 33A/75A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 34.5W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7764 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 30A/32A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 30A/32A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7784 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 31A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 15 V
Description: MOSFET N-CH 30V 31A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7788 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 15 V
Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON7804 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 426604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 22+ | 0.96 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| 2000+ | 0.39 EUR |
| AON7804 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 425000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.35 EUR |
| 10000+ | 0.32 EUR |
| 15000+ | 0.31 EUR |
| 25000+ | 0.29 EUR |
| 50000+ | 0.27 EUR |
| AON7804_101 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A/22A 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 17W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 9A/22A 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 17W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7804_102 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Bulk
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Bulk
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7810 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.39 EUR |
| 10000+ | 0.36 EUR |
| 15000+ | 0.35 EUR |
| AON7810 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 20089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.71 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.44 EUR |
| AON7812 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 6A
Description: MOSFET 2N-CH 30V 6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7820 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Description: MOSFET 2N-CH 20V 8DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON7826 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 9A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 9A, 10V
Description: MOSFET 2N-CH 20V 9A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 9A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7900 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7900 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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| AON7902 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar
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| AON7932 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| AON7932_101 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AON7934 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| AON7934 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 11+ | 1.96 EUR |
| 100+ | 1.31 EUR |
| AON7934_101 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7934_102 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
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| AONA66813 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| AONA66813 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.19 EUR |
| 10+ | 4.7 EUR |
| 100+ | 3.3 EUR |
| AONA66916 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| AONA66916 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Description: LINEAR IC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.59 EUR |
| 10+ | 6.34 EUR |
| 100+ | 4.51 EUR |
| 500+ | 3.72 EUR |
| 1000+ | 3.47 EUR |
| 2000+ | 3.45 EUR |
| AOND32324 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| AOND32324 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 12+ | 1.89 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |
| AOND62930 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 100V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 7.3W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 100V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 7.3W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| AONH36328 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Description: MOSFET 2N-CH 30V 13.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| AONH36334 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONL32328 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.61 EUR |
| 6000+ | 0.56 EUR |
| AONL32328 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 9592 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| AONP36320 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Description: MOSFET 2N-CH 30V 26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONP36332 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONP36332 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
auf Bestellung 2932 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.62 EUR |
| 10+ | 2.3 EUR |
| 25+ | 1.95 EUR |
| 100+ | 1.56 EUR |
| 250+ | 1.37 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.15 EUR |
| AONP36336 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 50A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.81 EUR |
| AONP36336 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Description: MOSFET 2N-CH 30V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
auf Bestellung 14084 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.01 EUR |
| AONR20485 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: SINGLE
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Description: SINGLE
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONR21117 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.76 EUR |
| 10000+ | 0.71 EUR |
| 15000+ | 0.69 EUR |
| 25000+ | 0.68 EUR |
| AONR21117 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
auf Bestellung 30024 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.03 EUR |
| 11+ | 1.93 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.92 EUR |
| 2000+ | 0.84 EUR |
| AONR21305C |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8DFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 8DFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONR21307 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
auf Bestellung 62015 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.6 EUR |
| AONR21307 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.54 EUR |
| 10000+ | 0.49 EUR |
| 15000+ | 0.48 EUR |
| 25000+ | 0.45 EUR |
| 35000+ | 0.44 EUR |
| AONR21311C |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONR21321 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.32 EUR |
| 10000+ | 0.3 EUR |
| AONR21321 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 11492 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.46 EUR |
| 24+ | 0.9 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| 2000+ | 0.37 EUR |
| AONR21357 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AONR21357 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 1271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.2 EUR |
| 16+ | 1.38 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |
















