Produkte > ALPHA & OMEGA SEMICONDUCTOR INC. > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR INC. (3920) > Seite 37 nach 66

Wählen Sie Seite:   [  << Vorherige Seite ]  1 6 12 18 24 30 32 33 34 35 36 37 38 39 40 41 42 48 54 60 66  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
AONS66916 AONS66916 Alpha & Omega Semiconductor Inc. AONS66916.pdf Description: N
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66916 AONS66916 Alpha & Omega Semiconductor Inc. AONS66916.pdf Description: N
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.98 EUR
10+5.28 EUR
100+3.74 EUR
500+3.44 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66916T AONS66916T Alpha & Omega Semiconductor Inc. Description: AONS66916T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 184A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66917 AONS66917 Alpha & Omega Semiconductor Inc. AONS66917.pdf Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
auf Bestellung 5629 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.09 EUR
10+6.03 EUR
100+4.28 EUR
500+3.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66917 AONS66917 Alpha & Omega Semiconductor Inc. AONS66917.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.07 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66917T AONS66917T Alpha & Omega Semiconductor Inc. Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66919 AONS66919 Alpha & Omega Semiconductor Inc. AONS66919.pdf Description: N
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66919 AONS66919 Alpha & Omega Semiconductor Inc. AONS66919.pdf Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
10+2.78 EUR
25+2.37 EUR
100+1.9 EUR
250+1.68 EUR
500+1.55 EUR
1000+1.43 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66920 AONS66920 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2241,4431,4739,6665,6939 Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 47226 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.94 EUR
10+2.51 EUR
100+1.69 EUR
500+1.34 EUR
1000+1.24 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66920 AONS66920 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2241,4431,4739,6665,6939 Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.09 EUR
6000+1.02 EUR
9000+0.99 EUR
15000+0.98 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66923 AONS66923 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2242,4432,4739,6666,6939 Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.01 EUR
6000+0.96 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66923 AONS66923 Alpha & Omega Semiconductor Inc. combine-support-documents?resources=2242,4432,4739,6666,6939 Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 14765 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.62 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66966 AONS66966 Alpha & Omega Semiconductor Inc. AONS66966_Rev.1.0_Dec2017.pdf Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 5117 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.79 EUR
10+5.12 EUR
100+3.59 EUR
500+2.94 EUR
1000+2.73 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66966 AONS66966 Alpha & Omega Semiconductor Inc. AONS66966_Rev.1.0_Dec2017.pdf Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.62 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS67614 Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS850A70 AONS850A70 Alpha & Omega Semiconductor Inc. AONS850A70.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V
Power Dissipation (Max): 4.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONT21313C AONT21313C Alpha & Omega Semiconductor Inc. AONT21313C.pdf Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONT32136C AONT32136C Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV070V65G1 Alpha & Omega Semiconductor Inc. AONV070V65G1.pdf Description: GAN
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: 8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONV110A60 Alpha & Omega Semiconductor Inc. Description: N
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV125A60 AONV125A60 Alpha & Omega Semiconductor Inc. Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 8.3W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV140A60 AONV140A60 Alpha & Omega Semiconductor Inc. Description: N
Part Status: Active
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 312W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV180A60 Alpha & Omega Semiconductor Inc. Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV210A60 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV420A70 Alpha & Omega Semiconductor Inc. Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 8.3W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX36320 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 0.82mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX36324 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 30V 21A/55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX38168 AONX38168 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.43 EUR
10+3.52 EUR
100+2.43 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX38168 AONX38168 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX38320 Alpha & Omega Semiconductor Inc. AONX38320.pdf Description: N
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36304 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 30V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONY36306 AONY36306 Alpha & Omega Semiconductor Inc. AONY36306.pdf Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36352 AONY36352 Alpha & Omega Semiconductor Inc. AONY36352.pdf Description: MOSFET 2N-CH 30V 18.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.01 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36352 AONY36352 Alpha & Omega Semiconductor Inc. AONY36352.pdf Description: MOSFET 2N-CH 30V 18.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 8688 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.69 EUR
10+2.34 EUR
100+1.58 EUR
500+1.25 EUR
1000+1.14 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36354 AONY36354 Alpha & Omega Semiconductor Inc. AONY36354.pdf Description: MOSFET 2N-CH 30V 18.5A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36354 AONY36354 Alpha & Omega Semiconductor Inc. AONY36354.pdf Description: MOSFET 2N-CH 30V 18.5A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Technology: MOSFET (Metal Oxide)
auf Bestellung 853 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.89 EUR
12+1.83 EUR
100+1.23 EUR
500+0.96 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36356 AONY36356 Alpha & Omega Semiconductor Inc. AONY36356.pdf Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36356 AONY36356 Alpha & Omega Semiconductor Inc. AONY36356.pdf Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2786 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.33 EUR
10+2.12 EUR
25+1.8 EUR
100+1.43 EUR
250+1.25 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOP605 AOP605 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N/P-CH 30V 8PDIP
Part Status: Obsolete
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOP607 AOP607 Alpha & Omega Semiconductor Inc. AOP607.pdf Description: MOSFET N/P-CH 60V 8DIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOP609 AOP609 Alpha & Omega Semiconductor Inc. AOP605_2.jpg Description: MOSFET N/P-CH 60V 8DIP
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOP610 AOP610 Alpha & Omega Semiconductor Inc. AOP610.pdf Description: MOSFET N/P-CH 30V 8PDIP
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Configuration: N and P-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21307 AOSD21307 Alpha & Omega Semiconductor Inc. AOSD21307.pdf Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21307 AOSD21307 Alpha & Omega Semiconductor Inc. AOSD21307.pdf Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 3826 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.34 EUR
15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21311C AOSD21311C Alpha & Omega Semiconductor Inc. AOSD21311C.pdf Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.46 EUR
6000+0.43 EUR
9000+0.42 EUR
15000+0.39 EUR
21000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21311C AOSD21311C Alpha & Omega Semiconductor Inc. AOSD21311C.pdf Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 47195 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.88 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21313C AOSD21313C Alpha & Omega Semiconductor Inc. AOSD21313C.pdf Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21313C AOSD21313C Alpha & Omega Semiconductor Inc. AOSD21313C.pdf Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7396 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.28 EUR
15+1.43 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD26313C AOSD26313C Alpha & Omega Semiconductor Inc. AOSD26313C.pdf Description: MOSFET N/P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD32334C AOSD32334C Alpha & Omega Semiconductor Inc. AOSD32334C.pdf Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.21 EUR
30000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD32334C AOSD32334C Alpha & Omega Semiconductor Inc. AOSD32334C.pdf Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 86186 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
29+0.74 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD32338C AOSD32338C Alpha & Omega Semiconductor Inc. AOSD32338C.pdf Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E Alpha & Omega Semiconductor Inc. AOSD62666E.pdf Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
6000+0.76 EUR
9000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E Alpha & Omega Semiconductor Inc. AOSD62666E.pdf Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 27231 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.03 EUR
11+1.94 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSN21319C AOSN21319C Alpha & Omega Semiconductor Inc. AOSN21319C.pdf Description: MOSFET P-CH 30V 2.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSN21319C AOSN21319C Alpha & Omega Semiconductor Inc. AOSN21319C.pdf Description: MOSFET P-CH 30V 2.6A SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 6699 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.21 EUR
28+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSN32338C AOSN32338C Alpha & Omega Semiconductor Inc. AOSN32338C.pdf Description: MOSFET N-CH 30V 3.7A SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21307 AOSP21307 Alpha & Omega Semiconductor Inc. AOSP21307.pdf Description: MOSFET P-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21311C AOSP21311C Alpha & Omega Semiconductor Inc. AOSP21311C.pdf Description: MOSFET P-CH 30V 6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21313C AOSP21313C Alpha & Omega Semiconductor Inc. AOSP21313C.pdf Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 17957 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.07 EUR
17+1.29 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66916 AONS66916.pdf
AONS66916
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66916 AONS66916.pdf
AONS66916
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.98 EUR
10+5.28 EUR
100+3.74 EUR
500+3.44 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66916T
AONS66916T
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AONS66916T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 184A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66917 AONS66917.pdf
AONS66917
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
auf Bestellung 5629 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.09 EUR
10+6.03 EUR
100+4.28 EUR
500+3.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66917 AONS66917.pdf
AONS66917
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.07 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66917T
AONS66917T
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66919 AONS66919.pdf
AONS66919
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66919 AONS66919.pdf
AONS66919
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.36 EUR
10+2.78 EUR
25+2.37 EUR
100+1.9 EUR
250+1.68 EUR
500+1.55 EUR
1000+1.43 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66920 combine-support-documents?resources=2241,4431,4739,6665,6939
AONS66920
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 47226 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.94 EUR
10+2.51 EUR
100+1.69 EUR
500+1.34 EUR
1000+1.24 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66920 combine-support-documents?resources=2241,4431,4739,6665,6939
AONS66920
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 17.5A/48A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.09 EUR
6000+1.02 EUR
9000+0.99 EUR
15000+0.98 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66923 combine-support-documents?resources=2242,4432,4739,6666,6939
AONS66923
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.01 EUR
6000+0.96 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66923 combine-support-documents?resources=2242,4432,4739,6666,6939
AONS66923
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 15A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
auf Bestellung 14765 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.62 EUR
10+2.32 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66966 AONS66966_Rev.1.0_Dec2017.pdf
AONS66966
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 5117 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.79 EUR
10+5.12 EUR
100+3.59 EUR
500+2.94 EUR
1000+2.73 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66966 AONS66966_Rev.1.0_Dec2017.pdf
AONS66966
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 31.3A/100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.3A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.62 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS67614
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS850A70 AONS850A70.pdf
AONS850A70
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 1.4A, 10V
Power Dissipation (Max): 4.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONT21313C AONT21313C.pdf
AONT21313C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONT32136C
AONT32136C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV070V65G1 AONV070V65G1.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: GAN
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: 8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONV110A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV125A60
AONV125A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 8.3W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV140A60
AONV140A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Part Status: Active
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 312W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV180A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN (8x8)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV210A60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4.1A/20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONV420A70
Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 8.3W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: 4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX36320
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 22A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 0.82mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX36324
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 21A/55A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 32A (Ta), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 2265pF @ 15V
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.95mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX38168
AONX38168
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
10+3.52 EUR
100+2.43 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX38168
AONX38168
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 25V 25A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 25V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONX38320 AONX38320.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: N
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, 123nC @ 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, 800µOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V, 6260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 66A (Tc), 57A (Ta), 233A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.1W (Ta), 24W (Tc), 4.4W (Ta), 73W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36304
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONY36306 AONY36306.pdf
AONY36306
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36352 AONY36352.pdf
AONY36352
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.01 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36352 AONY36352.pdf
AONY36352
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 52nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 2555pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 8688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.69 EUR
10+2.34 EUR
100+1.58 EUR
500+1.25 EUR
1000+1.14 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36354 AONY36354.pdf
AONY36354
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36354 AONY36354.pdf
AONY36354
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 18.5A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, 2.6mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 49A (Tc), 27A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
Technology: MOSFET (Metal Oxide)
auf Bestellung 853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.83 EUR
100+1.23 EUR
500+0.96 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36356 AONY36356.pdf
AONY36356
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONY36356 AONY36356.pdf
AONY36356
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 17.5A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2786 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.33 EUR
10+2.12 EUR
25+1.8 EUR
100+1.43 EUR
250+1.25 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOP605 AOSGreenPolicy.pdf
AOP605
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8PDIP
Part Status: Obsolete
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOP607 AOP607.pdf
AOP607
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8DIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOP609 AOP605_2.jpg
AOP609
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8DIP
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 30V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOP610 AOP610.pdf
AOP610
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8PDIP
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Configuration: N and P-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21307 AOSD21307.pdf
AOSD21307
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21307 AOSD21307.pdf
AOSD21307
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 3826 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21311C AOSD21311C.pdf
AOSD21311C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.46 EUR
6000+0.43 EUR
9000+0.42 EUR
15000+0.39 EUR
21000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21311C AOSD21311C.pdf
AOSD21311C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 47195 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21313C AOSD21313C.pdf
AOSD21313C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD21313C AOSD21313C.pdf
AOSD21313C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 5.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7396 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.28 EUR
15+1.43 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD26313C AOSD26313C.pdf
AOSD26313C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD32334C AOSD32334C.pdf
AOSD32334C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.21 EUR
30000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD32334C AOSD32334C.pdf
AOSD32334C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 86186 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
29+0.74 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD32338C AOSD32338C.pdf
AOSD32338C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E.pdf
AOSD62666E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.82 EUR
6000+0.76 EUR
9000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSD62666E AOSD62666E.pdf
AOSD62666E
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 60V 9.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 27231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
11+1.94 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSN21319C AOSN21319C.pdf
AOSN21319C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSN21319C AOSN21319C.pdf
AOSN21319C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.6A SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 6699 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
28+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSN32338C AOSN32338C.pdf
AOSN32338C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 3.7A SC70-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21307 AOSP21307.pdf
AOSP21307
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21311C AOSP21311C.pdf
AOSP21311C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOSP21313C AOSP21313C.pdf
AOSP21313C
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 17957 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
17+1.29 EUR
100+0.84 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 6 12 18 24 30 32 33 34 35 36 37 38 39 40 41 42 48 54 60 66  [ Nächste Seite >> ]