Produkte > ALPHA & OMEGA SEMICONDUCTOR > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR (2007) > Seite 12 nach 34
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| AOH3254 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 150V 5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOI1R4A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.4A Power dissipation: 48W Case: TO251A Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 8nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AOI21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Power dissipation: 31W Case: TO251A Gate-source voltage: ±25V On-state resistance: 11.5mΩ Gate charge: 70nC Kind of channel: enhancement Pulsed drain current: -180A Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOI2610E | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI294A | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 35A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 15.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI296A | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 45A; 35W; TO251A Mounting: THT Power dissipation: 35W Gate charge: 18.5nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO251A On-state resistance: 8.3mΩ |
auf Bestellung 1656 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOI2N60 | Alpha & Omega Semiconductor |
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auf Bestellung 3495 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOI409 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI409 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.2nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI4126 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 50W Case: TO251A Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Gate charge: 28nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI4184 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 25W Case: TO251A Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of channel: enhancement Gate charge: 27.2nC |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4185 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A |
auf Bestellung 2954 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4185 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A |
auf Bestellung 2954 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4185 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -31A; 31W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -31A Power dissipation: 31W Case: TO251A Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 18.6nC Kind of channel: enhancement |
auf Bestellung 2561 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI423 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -67A; 45W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -67A Power dissipation: 45W Case: TO251A Gate-source voltage: ±25V On-state resistance: 8.5mΩ Mounting: THT Gate charge: 45nC Kind of channel: enhancement |
auf Bestellung 2904 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI4286 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 2.8nC Kind of channel: enhancement |
auf Bestellung 3444 Stücke: Lieferzeit 14-21 Tag (e) |
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AOI442 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-251A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI442 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 24.2nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI444 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 10W Case: TO251A Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 3.8nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI468 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 8.3A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Gate charge: 12.8nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI5N40 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.8A Case: TO251A Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 6.9nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: THT Gate charge: 8.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AOI7N65 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AOK015V65X2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W Mounting: THT Case: TO247-3 Power dissipation: 312W Gate charge: 152nC Polarisation: unipolar Technology: SiC Drain current: 67A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: -5...15V Kind of package: tube On-state resistance: 23mΩ Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK065A60 | Alpha & Omega Semiconductor |
High Voltage MOSFETs (500V - 1000V) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK065V120X2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1200V; 40A; 187.5W; TO247 Mounting: THT Case: TO247 Power dissipation: 187.5W Gate charge: 155nC Polarisation: unipolar Drain current: 40A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: 15V Kind of package: tube On-state resistance: 65mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK065V120X2Q | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W Mounting: THT Case: TO247-3 Power dissipation: 187.5W Gate charge: 62.3nC Polarisation: unipolar Technology: SiC Drain current: 29.6A Kind of channel: enhancement Drain-source voltage: 1.2kV Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: -5...15V Kind of package: tube On-state resistance: 90mΩ Pulsed drain current: 85A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK10B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK125A60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 100A; 357W; TO247 Type of transistor: N-MOSFET Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Gate charge: 39nC On-state resistance: 0.125Ω Gate-source voltage: ±20V Drain current: 28A Pulsed drain current: 100A Power dissipation: 357W Drain-source voltage: 600V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK15B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 15A; 83.3W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 83.3W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 25.4nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOK160A60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 96A Power dissipation: 250W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK160A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Turn-off switching energy: 1.05mJ Mounting: THT Collector-emitter voltage: 1.35kV Power dissipation: 170W Gate charge: 66nC Pulsed collector current: 80A Type of transistor: IGBT Kind of package: tube Case: TO247 Turn-off time: 480ns Gate-emitter voltage: ±20V Collector-emitter saturation voltage: 1.57V Collector current: 20A |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK20S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK29S50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Case: TO247 Mounting: THT Kind of package: tube Collector-emitter voltage: 1.2kV Power dissipation: 170W Gate charge: 67nC Pulsed collector current: 120A Type of transistor: IGBT Turn-off time: 340ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.77V Collector current: 30A Turn-off switching energy: 1.28mJ |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOK30B135C1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 144W; TO247 Mounting: THT Collector-emitter voltage: 1.35kV Power dissipation: 144W Gate charge: 65nC Pulsed collector current: 120A Type of transistor: IGBT Kind of package: tube Case: TO247 Gate-emitter voltage: ±30V Collector current: 30A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOK30B135W1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Turn-off switching energy: 1.47mJ Mounting: THT Collector-emitter voltage: 1.35kV Power dissipation: 170W Gate charge: 62nC Pulsed collector current: 120A Type of transistor: IGBT Kind of package: tube Case: TO247 Turn-off time: 362ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.8V Collector current: 30A |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK30B135W1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK30B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 278W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK30B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK40B120H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ Mounting: THT Turn-on time: 133ns Turn-off time: 375ns Turn-off switching energy: 1.24mJ Turn-on switching energy: 2.45mJ Kind of package: tube Case: TO247 Collector-emitter saturation voltage: 1.8V Gate-emitter voltage: ±30V Collector current: 40A Power dissipation: 250W Pulsed collector current: 120A Collector-emitter voltage: 1.2kV Type of transistor: IGBT Gate charge: 128nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AOK40B120N1 | Alpha & Omega Semiconductor |
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK40B120N1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Mounting: THT Kind of package: tube Case: TO247 Gate-emitter voltage: ±30V Collector current: 40A Power dissipation: 300W Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Type of transistor: IGBT Gate charge: 0.1µC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK40B120P1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Mounting: THT Kind of package: tube Case: TO247 Gate-emitter voltage: ±30V Collector current: 40A Power dissipation: 300W Pulsed collector current: 160A Collector-emitter voltage: 1.2kV Type of transistor: IGBT Gate charge: 202nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK40B120P1 | Alpha & Omega Semiconductor |
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOK40B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK40B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 111W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 53ns Turn-off time: 102ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.3mJ Turn-on switching energy: 1.55mJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AOK40B65GQ1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 113W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 113W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 86nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AOK40B65H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 63nC Kind of package: tube Turn-on time: 82ns Turn-off time: 173ns Collector-emitter saturation voltage: 1.9V Turn-off switching energy: 0.46mJ Turn-on switching energy: 1.27mJ |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK40B65H1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AOK40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 152ns Collector-emitter saturation voltage: 2.05V Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ |
auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK40B65H2AL | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AOK40B65H2AL_002 | Alpha & Omega Semiconductor | AOK40B65H2AL_002 |
auf Bestellung 32640 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOK40B65HQ2 | Alpha & Omega Semiconductor |
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AOK40B65HQ3 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 156W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 156W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 74nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
AOK40B65M3 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.5mJ; Eon: 1.3mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 59nC Kind of package: tube Turn-on time: 80ns Turn-off time: 175ns Collector-emitter saturation voltage: 1.95V Turn-off switching energy: 0.5mJ Turn-on switching energy: 1.3mJ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOH3254 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 150V 5A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 150V 5A 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI1R4A70 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.4A
Power dissipation: 48W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.4A; 48W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.4A
Power dissipation: 48W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI21357 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Gate charge: 70nC
Kind of channel: enhancement
Pulsed drain current: -180A
Version: ESD
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -180A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 11.5mΩ
Gate charge: 70nC
Kind of channel: enhancement
Pulsed drain current: -180A
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI2610E |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI294A |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 15.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 15.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI296A |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 35W; TO251A
Mounting: THT
Power dissipation: 35W
Gate charge: 18.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO251A
On-state resistance: 8.3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 35W; TO251A
Mounting: THT
Power dissipation: 35W
Gate charge: 18.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO251A
On-state resistance: 8.3mΩ
auf Bestellung 1656 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 1.09 EUR |
| AOI2N60 |
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Hersteller: Alpha & Omega Semiconductor
auf Bestellung 3495 Stücke:
Lieferzeit 21-28 Tag (e)
| AOI409 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A
Trans MOSFET P-CH 60V 26A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI409 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.2nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI4126 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 50W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 28nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 50W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 28nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI4184 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 25W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 25W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 25W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 27.2nC
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 1.48 EUR |
| 125+ | 0.68 EUR |
| 142+ | 0.6 EUR |
| 158+ | 0.54 EUR |
| 490+ | 0.51 EUR |
| AOI4185 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A
Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A
auf Bestellung 2954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 298+ | 0.58 EUR |
| AOI4185 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A
Trans MOSFET P-CH 40V 40A 3-Pin(3+Tab) TO-251A
auf Bestellung 2954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 298+ | 0.58 EUR |
| AOI4185 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -31A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -31A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -31A; 31W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -31A
Power dissipation: 31W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 18.6nC
Kind of channel: enhancement
auf Bestellung 2561 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 1.11 EUR |
| 121+ | 0.7 EUR |
| 138+ | 0.62 EUR |
| 150+ | 0.57 EUR |
| 490+ | 0.52 EUR |
| AOI423 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -67A; 45W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -67A
Power dissipation: 45W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 45nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -67A; 45W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -67A
Power dissipation: 45W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 45nC
Kind of channel: enhancement
auf Bestellung 2904 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 1.27 EUR |
| 121+ | 0.7 EUR |
| 136+ | 0.63 EUR |
| 150+ | 0.57 EUR |
| 490+ | 0.55 EUR |
| AOI4286 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of channel: enhancement
auf Bestellung 3444 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 224+ | 0.38 EUR |
| 249+ | 0.35 EUR |
| 274+ | 0.31 EUR |
| 490+ | 0.29 EUR |
| AOI442 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-251A
Trans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-251A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI442 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 24.2nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 24.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI444 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 10W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 3.8nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; 10W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 10W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 3.8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI468 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8.3A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 12.8nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.3A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8.3A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 12.8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI5N40 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI66406 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Power dissipation: 20.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 8.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Power dissipation: 20.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 8.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI7N65 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI8N25 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOI950A70 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK015V65X2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Mounting: THT
Case: TO247-3
Power dissipation: 312W
Gate charge: 152nC
Polarisation: unipolar
Technology: SiC
Drain current: 67A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
On-state resistance: 23mΩ
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Mounting: THT
Case: TO247-3
Power dissipation: 312W
Gate charge: 152nC
Polarisation: unipolar
Technology: SiC
Drain current: 67A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
On-state resistance: 23mΩ
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AOK065A60 |
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Hersteller: Alpha & Omega Semiconductor
High Voltage MOSFETs (500V - 1000V)
High Voltage MOSFETs (500V - 1000V)
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK065V120X2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1200V; 40A; 187.5W; TO247
Mounting: THT
Case: TO247
Power dissipation: 187.5W
Gate charge: 155nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: 15V
Kind of package: tube
On-state resistance: 65mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1200V; 40A; 187.5W; TO247
Mounting: THT
Case: TO247
Power dissipation: 187.5W
Gate charge: 155nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: 15V
Kind of package: tube
On-state resistance: 65mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOK065V120X2Q |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Mounting: THT
Case: TO247-3
Power dissipation: 187.5W
Gate charge: 62.3nC
Polarisation: unipolar
Technology: SiC
Drain current: 29.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
On-state resistance: 90mΩ
Pulsed drain current: 85A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Mounting: THT
Case: TO247-3
Power dissipation: 187.5W
Gate charge: 62.3nC
Polarisation: unipolar
Technology: SiC
Drain current: 29.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
On-state resistance: 90mΩ
Pulsed drain current: 85A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK10B60D |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK125A60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 100A; 357W; TO247
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 0.125Ω
Gate-source voltage: ±20V
Drain current: 28A
Pulsed drain current: 100A
Power dissipation: 357W
Drain-source voltage: 600V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 100A; 357W; TO247
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 0.125Ω
Gate-source voltage: ±20V
Drain current: 28A
Pulsed drain current: 100A
Power dissipation: 357W
Drain-source voltage: 600V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK15B60D |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 83.3W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 83.3W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 83.3W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 83.3W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK160A60 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 96A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK160A60 |
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Hersteller: Alpha & Omega Semiconductor
N Channel Power Transistor
N Channel Power Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AOK20B135D1 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Turn-off switching energy: 1.05mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 170W
Gate charge: 66nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Turn-off time: 480ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.57V
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Turn-off switching energy: 1.05mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 170W
Gate charge: 66nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Turn-off time: 480ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.57V
Collector current: 20A
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.18 EUR |
| 16+ | 5.57 EUR |
| 18+ | 4.91 EUR |
| 90+ | 4.4 EUR |
| AOK20S60L |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK29S50L |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK30B120D2 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Case: TO247
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 170W
Gate charge: 67nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-off time: 340ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.77V
Collector current: 30A
Turn-off switching energy: 1.28mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Case: TO247
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 170W
Gate charge: 67nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-off time: 340ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.77V
Collector current: 30A
Turn-off switching energy: 1.28mJ
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.44 EUR |
| 15+ | 5.78 EUR |
| 17+ | 5.12 EUR |
| AOK30B135C1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 144W; TO247
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 144W
Gate charge: 65nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 30A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 144W; TO247
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 144W
Gate charge: 65nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 30A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
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| AOK30B135W1 |
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Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| AOK30B135W1 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Turn-off switching energy: 1.47mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 170W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Turn-off time: 362ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.8V
Collector current: 30A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Turn-off switching energy: 1.47mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 170W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Turn-off time: 362ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.8V
Collector current: 30A
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.33 EUR |
| 19+ | 4.7 EUR |
| 21+ | 4.22 EUR |
| 90+ | 3.96 EUR |
| AOK30B135W1 |
![]() |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| AOK30B60D |
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Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 278W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 278W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK30B60D1 |
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Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B120H1 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Mounting: THT
Turn-on time: 133ns
Turn-off time: 375ns
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
Kind of package: tube
Case: TO247
Collector-emitter saturation voltage: 1.8V
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 250W
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 128nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Mounting: THT
Turn-on time: 133ns
Turn-off time: 375ns
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
Kind of package: tube
Case: TO247
Collector-emitter saturation voltage: 1.8V
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 250W
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 128nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B120N1 |
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Hersteller: Alpha & Omega Semiconductor
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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Stück im Wert von UAH
| AOK40B120N1 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 300W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 0.1µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 300W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 0.1µC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK40B120P1 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 300W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 202nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 300W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 202nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK40B120P1 |
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Hersteller: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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| AOK40B60D |
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Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B60D1 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 111W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 102ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.3mJ
Turn-on switching energy: 1.55mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 111W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 102ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.3mJ
Turn-on switching energy: 1.55mJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B65GQ1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 113W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 113W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 113W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 113W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B65H1 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Turn-on time: 82ns
Turn-off time: 173ns
Collector-emitter saturation voltage: 1.9V
Turn-off switching energy: 0.46mJ
Turn-on switching energy: 1.27mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Turn-on time: 82ns
Turn-off time: 173ns
Collector-emitter saturation voltage: 1.9V
Turn-off switching energy: 0.46mJ
Turn-on switching energy: 1.27mJ
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.18 EUR |
| 19+ | 4.58 EUR |
| 21+ | 4.12 EUR |
| 90+ | 3.84 EUR |
| AOK40B65H1 |
![]() |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B65H2AL |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.05 EUR |
| 34+ | 2.57 EUR |
| 38+ | 2.28 EUR |
| 40+ | 2.13 EUR |
| 60+ | 2.07 EUR |
| 90+ | 2.05 EUR |
| 150+ | 2.01 EUR |
| 240+ | 1.98 EUR |
| AOK40B65H2AL |
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Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B65H2AL_002 |
Hersteller: Alpha & Omega Semiconductor
AOK40B65H2AL_002
AOK40B65H2AL_002
auf Bestellung 32640 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 3.2 EUR |
| 8160+ | 2.9 EUR |
| 16320+ | 2.65 EUR |
| 24480+ | 2.46 EUR |
| AOK40B65HQ2 |
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Hersteller: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B65HQ3 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 156W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 156W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 156W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 156W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOK40B65M3 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.5mJ; Eon: 1.3mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Turn-on time: 80ns
Turn-off time: 175ns
Collector-emitter saturation voltage: 1.95V
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 1.3mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.5mJ; Eon: 1.3mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Turn-on time: 80ns
Turn-off time: 175ns
Collector-emitter saturation voltage: 1.95V
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 1.3mJ
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH











