Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXT1000N06N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V Drain-source voltage: 60V Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT1000N06N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V Drain-source voltage: 60V Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT1080P06B | BRIDGELUX | BXT1080P06B SMD P channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT1100P02M | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Case: SOT23 Gate-source voltage: ±10V Mounting: SMD Kind of channel: enhancement Pulsed drain current: -10A On-state resistance: 0.11Ω Power dissipation: 1.25W Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT1100P02M | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Case: SOT23 Gate-source voltage: ±10V Mounting: SMD Kind of channel: enhancement Pulsed drain current: -10A On-state resistance: 0.11Ω Power dissipation: 1.25W Kind of package: reel Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT110P03E | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Case: PDFN33 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT110P03E | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Case: PDFN33 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BXT1150N10D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Case: TO252 Drain-source voltage: 100V Drain current: 12.8A On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 64A Mounting: SMD |
auf Bestellung 4505 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT1150N10D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Case: TO252 Drain-source voltage: 100V Drain current: 12.8A On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 64A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4505 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT1150N10J | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Case: SOT89-3 Drain-source voltage: 100V Drain current: 5.6A On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 32A Mounting: SMD |
auf Bestellung 3962 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT1150N10J | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Case: SOT89-3 Drain-source voltage: 100V Drain current: 5.6A On-state resistance: 135mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 32A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3962 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT1700P06M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Drain current: -2.8A On-state resistance: 0.17Ω Gate charge: 22nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -16A |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT1700P06M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.5W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Drain current: -2.8A On-state resistance: 0.17Ω Gate charge: 22nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -16A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT170N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT170N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Drain-source voltage: 20V Drain current: 6.8A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel Gate charge: 12.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 27.2A Mounting: SMD Case: SOT23 |
auf Bestellung 11975 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Drain-source voltage: 20V Drain current: 6.8A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel Gate charge: 12.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 27.2A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11975 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT230P03B | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Drain-source voltage: -30V Drain current: -7A On-state resistance: 34mΩ Type of transistor: P-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: SOP8 |
auf Bestellung 3106 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT230P03B | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Drain-source voltage: -30V Drain current: -7A On-state resistance: 34mΩ Type of transistor: P-MOSFET Power dissipation: 3.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 28nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD Case: SOP8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3106 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT250N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT250N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT250N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT250N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT270N02M | BRIDGELUX | BXT270N02M SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT2800N10D | BRIDGELUX | BXT2800N10D SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT2800N10M | BRIDGELUX | BXT2800N10M SMD N channel transistors |
auf Bestellung 5012 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT280N02B | BRIDGELUX |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.6W Case: SOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 38mΩ Gate charge: 5.5nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 24A Drain-source voltage: 20V Drain current: 4A |
auf Bestellung 481 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT280N02B | BRIDGELUX |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.6W Case: SOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 38mΩ Gate charge: 5.5nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 24A Drain-source voltage: 20V Drain current: 4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 481 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT280N03M | BRIDGELUX | BXT280N03M SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BXT2N7002BK | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BXT2N7002BK | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
BXT2N7002T | BRIDGELUX | BXT2N7002T SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT2N7002T3 | BRIDGELUX | BXT2N7002T3 SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT320N02D | BRIDGELUX | BXT320N02D SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT330N02M | BRIDGELUX | BXT330N02M SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT330N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT330N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT330N03N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT330N03N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BXT330N06D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 27.8W Case: TO252 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 14A On-state resistance: 45mΩ Gate charge: 24.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A |
auf Bestellung 7498 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT330N06D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 27.8W Case: TO252 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 14A On-state resistance: 45mΩ Gate charge: 24.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7498 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT350P02M | BRIDGELUX | BXT350P02M SMD P channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BXT3800P06M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.2W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Drain current: -2.1A On-state resistance: 0.55Ω Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -12A |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT3800P06M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 1.2W Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Drain current: -2.1A On-state resistance: 0.55Ω Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 890 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT400N06N | BRIDGELUX | BXT400N06N SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BXT420N03M | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 1.1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 11489 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT420N03M | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 1.1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11489 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT500N02M | BRIDGELUX | BXT500N02M SMD N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXT520P02M | BRIDGELUX | BXT520P02M SMD P channel transistors |
auf Bestellung 630 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT600P03M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -16.4A Mounting: SMD Case: SOT23-3 Drain-source voltage: -30V Drain current: -2.7A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W |
auf Bestellung 2725 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT600P03M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -16.4A Mounting: SMD Case: SOT23-3 Drain-source voltage: -30V Drain current: -2.7A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2725 Stücke: Lieferzeit 7-14 Tag (e) |
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BXT900P06D | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; TO252 Case: TO252 Mounting: SMD Type of transistor: P-MOSFET Kind of channel: enhancement Drain-source voltage: -60V Polarisation: unipolar Kind of package: reel; tape |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BXT900P06D | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; TO252 Case: TO252 Mounting: SMD Type of transistor: P-MOSFET Kind of channel: enhancement Drain-source voltage: -60V Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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BXW10M1K2H | BRIDGELUX | BXW10M1K2H THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXW120R015H | BRIDGELUX | BXW120R015H THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXW120R036H | BRIDGELUX | BXW120R036H THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXW120R036H4 | BRIDGELUX | BXW120R036H4 THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXW18M1K2H | BRIDGELUX | BXW18M1K2H THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXW3M1K7H | BRIDGELUX | BXW3M1K7H THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BXW60M1K2H | BRIDGELUX | BXW60M1K2H THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BXT1000N06N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT1000N06N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT1080P06B |
Hersteller: BRIDGELUX
BXT1080P06B SMD P channel transistors
BXT1080P06B SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT1100P02M |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT1100P02M |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -10A
On-state resistance: 0.11Ω
Power dissipation: 1.25W
Kind of package: reel
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT110P03E |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT110P03E |
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT1150N10D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 64A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 64A
Mounting: SMD
auf Bestellung 4505 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
254+ | 0.28 EUR |
319+ | 0.22 EUR |
355+ | 0.2 EUR |
596+ | 0.12 EUR |
625+ | 0.11 EUR |
BXT1150N10D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 64A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Case: TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 64A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4505 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
254+ | 0.28 EUR |
319+ | 0.22 EUR |
355+ | 0.2 EUR |
596+ | 0.12 EUR |
625+ | 0.11 EUR |
BXT1150N10J |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
auf Bestellung 3962 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
417+ | 0.17 EUR |
527+ | 0.14 EUR |
589+ | 0.12 EUR |
981+ | 0.073 EUR |
1042+ | 0.069 EUR |
BXT1150N10J |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Case: SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3962 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
417+ | 0.17 EUR |
527+ | 0.14 EUR |
589+ | 0.12 EUR |
981+ | 0.073 EUR |
1042+ | 0.069 EUR |
BXT1700P06M |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.8A
On-state resistance: 0.17Ω
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.8A
On-state resistance: 0.17Ω
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16A
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
BXT1700P06M |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.8A
On-state resistance: 0.17Ω
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.8A
On-state resistance: 0.17Ω
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
10+ | 7.15 EUR |
25+ | 2.86 EUR |
100+ | 0.72 EUR |
166+ | 0.43 EUR |
455+ | 0.16 EUR |
3000+ | 0.093 EUR |
BXT170N06D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT170N06D |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT210N02M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Drain-source voltage: 20V
Drain current: 6.8A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel
Gate charge: 12.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 27.2A
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Drain-source voltage: 20V
Drain current: 6.8A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel
Gate charge: 12.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 27.2A
Mounting: SMD
Case: SOT23
auf Bestellung 11975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
298+ | 0.24 EUR |
596+ | 0.12 EUR |
993+ | 0.072 EUR |
1484+ | 0.048 EUR |
1839+ | 0.039 EUR |
1859+ | 0.038 EUR |
1946+ | 0.037 EUR |
3000+ | 0.035 EUR |
BXT210N02M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Drain-source voltage: 20V
Drain current: 6.8A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel
Gate charge: 12.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 27.2A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Drain-source voltage: 20V
Drain current: 6.8A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel
Gate charge: 12.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 27.2A
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
298+ | 0.24 EUR |
596+ | 0.12 EUR |
993+ | 0.072 EUR |
1484+ | 0.048 EUR |
1839+ | 0.039 EUR |
1859+ | 0.038 EUR |
BXT230P03B |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: SOP8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: SOP8
auf Bestellung 3106 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
197+ | 0.36 EUR |
231+ | 0.31 EUR |
288+ | 0.25 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
BXT230P03B |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: SOP8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Case: SOP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3106 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
197+ | 0.36 EUR |
231+ | 0.31 EUR |
288+ | 0.25 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
BXT250N03B |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT250N03B |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT250N03M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT250N03M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT270N02M |
Hersteller: BRIDGELUX
BXT270N02M SMD N channel transistors
BXT270N02M SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
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BXT2800N10D |
Hersteller: BRIDGELUX
BXT2800N10D SMD N channel transistors
BXT2800N10D SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT2800N10M |
Hersteller: BRIDGELUX
BXT2800N10M SMD N channel transistors
BXT2800N10M SMD N channel transistors
auf Bestellung 5012 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
538+ | 0.13 EUR |
1938+ | 0.037 EUR |
2050+ | 0.035 EUR |
BXT280N02B |
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Hersteller: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 24A
Drain-source voltage: 20V
Drain current: 4A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 24A
Drain-source voltage: 20V
Drain current: 4A
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
360+ | 0.2 EUR |
420+ | 0.17 EUR |
481+ | 0.14 EUR |
BXT280N02B |
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Hersteller: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 24A
Drain-source voltage: 20V
Drain current: 4A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 24A
Drain-source voltage: 20V
Drain current: 4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 481 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
360+ | 0.2 EUR |
420+ | 0.17 EUR |
481+ | 0.14 EUR |
603+ | 0.12 EUR |
BXT280N03M |
Hersteller: BRIDGELUX
BXT280N03M SMD N channel transistors
BXT280N03M SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT2N7002BK |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT2N7002BK |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT2N7002T |
Hersteller: BRIDGELUX
BXT2N7002T SMD N channel transistors
BXT2N7002T SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT2N7002T3 |
Hersteller: BRIDGELUX
BXT2N7002T3 SMD N channel transistors
BXT2N7002T3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT320N02D |
Hersteller: BRIDGELUX
BXT320N02D SMD N channel transistors
BXT320N02D SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT330N02M |
Hersteller: BRIDGELUX
BXT330N02M SMD N channel transistors
BXT330N02M SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT330N03M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT330N03M |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT330N03N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT330N03N |
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT330N06D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 27.8W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 45mΩ
Gate charge: 24.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 27.8W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 45mΩ
Gate charge: 24.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
auf Bestellung 7498 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
277+ | 0.26 EUR |
348+ | 0.21 EUR |
385+ | 0.19 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
BXT330N06D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 27.8W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 45mΩ
Gate charge: 24.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 27.8W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 45mΩ
Gate charge: 24.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7498 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
277+ | 0.26 EUR |
348+ | 0.21 EUR |
385+ | 0.19 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
BXT350P02M |
Hersteller: BRIDGELUX
BXT350P02M SMD P channel transistors
BXT350P02M SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT3800P06M |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.2W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.1A
On-state resistance: 0.55Ω
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.2W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.1A
On-state resistance: 0.55Ω
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
305+ | 0.23 EUR |
382+ | 0.19 EUR |
428+ | 0.17 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
BXT3800P06M |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.2W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.1A
On-state resistance: 0.55Ω
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 1.2W
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.1A
On-state resistance: 0.55Ω
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 890 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
305+ | 0.23 EUR |
382+ | 0.19 EUR |
428+ | 0.17 EUR |
658+ | 0.11 EUR |
695+ | 0.1 EUR |
BXT400N06N |
Hersteller: BRIDGELUX
BXT400N06N SMD N channel transistors
BXT400N06N SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT420N03M |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 11489 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
736+ | 0.097 EUR |
1051+ | 0.068 EUR |
1320+ | 0.054 EUR |
1475+ | 0.048 EUR |
1755+ | 0.041 EUR |
2337+ | 0.031 EUR |
2464+ | 0.029 EUR |
BXT420N03M |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11489 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
736+ | 0.097 EUR |
1051+ | 0.068 EUR |
1320+ | 0.054 EUR |
1475+ | 0.048 EUR |
1755+ | 0.041 EUR |
2337+ | 0.031 EUR |
BXT500N02M |
Hersteller: BRIDGELUX
BXT500N02M SMD N channel transistors
BXT500N02M SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BXT520P02M |
Hersteller: BRIDGELUX
BXT520P02M SMD P channel transistors
BXT520P02M SMD P channel transistors
auf Bestellung 630 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
284+ | 0.25 EUR |
630+ | 0.11 EUR |
1341+ | 0.053 EUR |
12000+ | 0.038 EUR |
BXT600P03M |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16.4A
Mounting: SMD
Case: SOT23-3
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.51W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16.4A
Mounting: SMD
Case: SOT23-3
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.51W
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
527+ | 0.14 EUR |
754+ | 0.095 EUR |
940+ | 0.076 EUR |
1053+ | 0.068 EUR |
1634+ | 0.044 EUR |
1725+ | 0.041 EUR |
BXT600P03M |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16.4A
Mounting: SMD
Case: SOT23-3
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.51W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16.4A
Mounting: SMD
Case: SOT23-3
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.51W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2725 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
527+ | 0.14 EUR |
754+ | 0.095 EUR |
940+ | 0.076 EUR |
1053+ | 0.068 EUR |
1634+ | 0.044 EUR |
1725+ | 0.041 EUR |
BXT900P06D |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Case: TO252
Mounting: SMD
Type of transistor: P-MOSFET
Kind of channel: enhancement
Drain-source voltage: -60V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Case: TO252
Mounting: SMD
Type of transistor: P-MOSFET
Kind of channel: enhancement
Drain-source voltage: -60V
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
176+ | 0.41 EUR |
206+ | 0.35 EUR |
258+ | 0.28 EUR |
481+ | 0.15 EUR |
506+ | 0.14 EUR |
BXT900P06D |
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Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Case: TO252
Mounting: SMD
Type of transistor: P-MOSFET
Kind of channel: enhancement
Drain-source voltage: -60V
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Case: TO252
Mounting: SMD
Type of transistor: P-MOSFET
Kind of channel: enhancement
Drain-source voltage: -60V
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
176+ | 0.41 EUR |
206+ | 0.35 EUR |
258+ | 0.28 EUR |
481+ | 0.15 EUR |
506+ | 0.14 EUR |
BXW10M1K2H |
Hersteller: BRIDGELUX
BXW10M1K2H THT N channel transistors
BXW10M1K2H THT N channel transistors
Produkt ist nicht verfügbar
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BXW120R015H |
Hersteller: BRIDGELUX
BXW120R015H THT N channel transistors
BXW120R015H THT N channel transistors
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BXW120R036H |
Hersteller: BRIDGELUX
BXW120R036H THT N channel transistors
BXW120R036H THT N channel transistors
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BXW120R036H4 |
Hersteller: BRIDGELUX
BXW120R036H4 THT N channel transistors
BXW120R036H4 THT N channel transistors
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BXW18M1K2H |
Hersteller: BRIDGELUX
BXW18M1K2H THT N channel transistors
BXW18M1K2H THT N channel transistors
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BXW3M1K7H |
Hersteller: BRIDGELUX
BXW3M1K7H THT N channel transistors
BXW3M1K7H THT N channel transistors
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BXW60M1K2H |
Hersteller: BRIDGELUX
BXW60M1K2H THT N channel transistors
BXW60M1K2H THT N channel transistors
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