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IRFS4115TRLPBF IRFS4115TRLPBF Infineon Technologies irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f Description: MOSFET N-CH 150V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 62A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 1291 Stücke:
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3+6.79 EUR
10+4.44 EUR
100+3.1 EUR
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IRFS4127TRLPBF IRFS4127TRLPBF Infineon Technologies irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192 Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
auf Bestellung 3159 Stücke:
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3+6.14 EUR
10+4.03 EUR
100+2.82 EUR
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IRFS4615TRLPBF IRFS4615TRLPBF Infineon Technologies irfs4615pbf.pdf?fileId=5546d462533600a40153563a456a21bb Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 1190 Stücke:
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5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
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IRLR3636TRPBF IRLR3636TRPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
auf Bestellung 24010 Stücke:
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5+3.68 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
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IRLS3034TRL7PP IRLS3034TRL7PP Infineon Technologies irls3034-7ppbf.pdf?fileId=5546d462533600a401535671af462705 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Produkt ist nicht verfügbar
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IRLS3034TRLPBF IRLS3034TRLPBF Infineon Technologies irls3034pbf.pdf?fileId=5546d462533600a401535671b7472707 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
auf Bestellung 3977 Stücke:
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4+5.74 EUR
10+3.75 EUR
100+2.62 EUR
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IRLS3036TRLPBF IRLS3036TRLPBF Infineon Technologies irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
auf Bestellung 5081 Stücke:
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3+6.85 EUR
10+4.5 EUR
100+3.18 EUR
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IRLS4030TRL7PP IRLS4030TRL7PP Infineon Technologies irls4030-7ppbf.pdf?fileId=5546d462533600a401535671d8902713 Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
auf Bestellung 4 Stücke:
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IRLS4030TRLPBF IRLS4030TRLPBF Infineon Technologies irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715 Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
auf Bestellung 305 Stücke:
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10+3.68 EUR
100+2.57 EUR
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CY2CC910OXI-1 CY2CC910OXI-1 Infineon Technologies cy2cc910_8.pdf Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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CY2CC910OXI-1T CY2CC910OXI-1T Infineon Technologies cy2cc910_8.pdf Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C10612DV33-10ZSXIT Infineon Technologies Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1306CV25-167BZC CY7C1306CV25-167BZC Infineon Technologies cy7c130%283%2C6%29cv25.pdf Description: IC SRAM 18MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR
Voltage - Supply: 2.4V ~ 2.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1315JV18-300BZC CY7C1315JV18-300BZC Infineon Technologies CY7C1311%2813%2C15%29%2C1911JV18_8.pdf Description: IC SRAM 18MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1423JV18-250BZXC CY7C1423JV18-250BZXC Infineon Technologies CY7C1422,3,4,9JV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1423JV18-267BZXCT CY7C1423JV18-267BZXCT Infineon Technologies CY7C1422,3,4,9JV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 267 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C20434-12LQXIT CY8C20434-12LQXIT Infineon Technologies Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC MCU 8BIT 8KB FLASH 32QFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Produkt ist nicht verfügbar
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CYONS2000-LBXC CYONS2000-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
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CYONS2001-LBXC CYONS2001-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
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CYONS2100-LBXC CYONS2100-LBXC Infineon Technologies CYONS2100.pdf Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
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CYONS2101-LBXC CYONS2101-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
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CYONS2110-LBXC CYONS2110-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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CYWB0224ABM-BVXI CYWB0224ABM-BVXI Infineon Technologies CYWB0224%2C26ABS%2CABM.pdf Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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CYWB0224ABMX-FDXIT CYWB0224ABMX-FDXIT Infineon Technologies CYWB0224,26ABS,ABM.pdf Description: IC WEST BRIDGE HS-USB 81-WLCSP
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CYWB0224ABS-BVXIT CYWB0224ABS-BVXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 100VFBGA
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
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CYWB0226ABMX-FDXIT CYWB0226ABMX-FDXIT Infineon Technologies CYWB0224,26ABS,ABM.pdf Description: IC WEST BRIDGE HS-USB 81-WLCSP
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CYWB0226ABS-BVXIT CYWB0226ABS-BVXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 100VFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
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IRF1404ZGPBF IRF1404ZGPBF Infineon Technologies IRF1404ZGPBF.pdf Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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IRF7665S2TR1PBF IRF7665S2TR1PBF Infineon Technologies IRF7665S2TR%281%29PbF.pdf Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
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IRF8707GTRPBF IRF8707GTRPBF Infineon Technologies IRF8707GPbF.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8714GTRPBF IRF8714GTRPBF Infineon Technologies IRF8714GPbF.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8721GTRPBF IRF8721GTRPBF Infineon Technologies IRF8721GPbF.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
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IRFB3004GPBF IRFB3004GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
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IRFB3006GPBF IRFB3006GPBF Infineon Technologies irfb3006gpbf.pdf?fileId=5546d462533600a4015356123f051de7 Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IRGI4056DPBF IRGI4056DPBF Infineon Technologies irgi4056dpbf.pdf Description: IGBT 600V 18A 34W TO220FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Gate Charge: 25 nC
Test Condition: 400V, 9A, 22Ohm, 15V
Switching Energy: 59µJ (on), 177µJ (off)
Td (on/off) @ 25°C: 34ns/84ns
IGBT Type: Trench
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IRLB3813PBF IRLB3813PBF Infineon Technologies irlb3813pbf.pdf?fileId=5546d462533600a4015356603cfe258b Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
auf Bestellung 11150 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.49 EUR
50+2.19 EUR
100+1.97 EUR
500+1.57 EUR
1000+1.45 EUR
2000+1.34 EUR
5000+1.23 EUR
10000+1.16 EUR
Mindestbestellmenge: 4 Stücke
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IRF8707GPBF IRF8707GPBF Infineon Technologies IRF8707GPbF.pdf Description: MOSFET N-CH 30V 11A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IRF8714GPBF IRF8714GPBF Infineon Technologies IRF8714GPbF.pdf Description: MOSFET N-CH 30V 14A 8SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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IRF8721GPBF IRF8721GPBF Infineon Technologies IRF8721GPbF.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6718L2TR1PBF IRF6718L2TR1PBF Infineon Technologies IRF6718L2TR%281%29PbF.pdf Description: MOSFET N-CH 25V 61A DIRECTFET
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Produkt ist nicht verfügbar
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IRF6718L2TRPBF IRF6718L2TRPBF Infineon Technologies IRF6718L2TR%281%29PbF.pdf Description: MOSFET N-CH 25V 61A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AGIGA8003-004ACA AGIGA8003-004ACA Infineon Technologies Description: MODUL NVRAM 4MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 4MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8004-008ACA AGIGA8004-008ACA Infineon Technologies Description: MODUL NVRAM 8MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 8MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8005-016ACA AGIGA8005-016ACA Infineon Technologies Description: MODULE NVRAM 16MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 16MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8006-032ACA AGIGA8006-032ACA Infineon Technologies Description: MODULE NVRAM 32MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 32MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8007-064ACA AGIGA8007-064ACA Infineon Technologies Description: MODULE NVRAM 64MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 64MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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CY24293ZXCT CY24293ZXCT Infineon Technologies download Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
Produkt ist nicht verfügbar
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CY24378ZXC CY24378ZXC Infineon Technologies Description: IC CLK BUFFER 2PR 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 16-TSSOP
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CY26121KZI-21 CY26121KZI-21 Infineon Technologies CY26121.pdf Description: IC FANOUT DIST 16TSSOP
Frequency - Max: 33.33MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
Produkt ist nicht verfügbar
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CY3210-PLOC10 Infineon Technologies Description: PSOC WITH C COMPILER EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Platform: PSoC with C Compiler
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3210-PSOCEVAL1-U Infineon Technologies Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3660 Infineon Technologies CY3660%20enCoRe%20V_DVK%20Kit.pdf Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3675-LCC4A Infineon Technologies CY3675%20Clock%20Programming%20Kit.pdf Description: BOARD ADAPTER LCC4A
Packaging: Box
For Use With/Related Products: CY25701, CY25702
Accessory Type: Socket Adapter
Utilized IC / Part: CY25701, CY25702
Produkt ist nicht verfügbar
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CY3675-LCC6A Infineon Technologies CY3675%20Clock%20Programming%20Kit.pdf Description: BOARD ADAPTER LCC6A
Packaging: Box
For Use With/Related Products: CY2X013, CY2X014, CY2XF23, CY2XF24, CY2XF32, CY2XF33, CY2XF34
Accessory Type: Socket Adapter
Utilized IC / Part: CY2X013, CY2X014, CY2XF23, CY2XF24, CY2XF32, CY2XF33, CY2XF34
Produkt ist nicht verfügbar
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CY3675-QFN24A Infineon Technologies CY3675%20Clock%20Programming%20Kit.pdf Description: BOARD ADAPTER QFN24A
Packaging: Box
Accessory Type: Socket Adapter
Utilized IC / Part: CY2544, CY2545, CY2548
Produkt ist nicht verfügbar
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CY3675-QFN8A Infineon Technologies CY3675%20Clock%20Programming%20Kit.pdf Description: BOARD ADAPTER QFN8A
Packaging: Box
For Use With/Related Products: CY22M1, CY22U1
Accessory Type: Socket Adapter
Utilized IC / Part: CY22M1, CY22U1
Produkt ist nicht verfügbar
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CY3675-SOIC8A Infineon Technologies CY3675%20Clock%20Programming%20Kit.pdf Description: BOARD ADAPTER SOIC8A
Packaging: Box
For Use With/Related Products: CY25402, CY25403, CY25422, CY25423, CY25482, CY25483
Accessory Type: Socket Adapter
Utilized IC / Part: CY25402, CY25403, CY25422, CY25423, CY25482, CY25483
Produkt ist nicht verfügbar
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CY3675-TSSOP20B Infineon Technologies CY3675%20Clock%20Programming%20Kit.pdf Description: BOARD ADAPTER TSSOP20B
Packaging: Box
For Use With/Related Products: CY25404
Accessory Type: Socket Adapter
Utilized IC / Part: CY25404
Part Status: Active
Produkt ist nicht verfügbar
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CY36800J CY36800J Infineon Technologies CY36800%20InstaClock%20Brochure.pdf Description: KIT PROGRAM INSTACLOCK JAPAN
Contents: Board(s)
Type: Programmer
For Use With/Related Products: CY22800
Packaging: Box
Produkt ist nicht verfügbar
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CY62128EV30LL-45SXA CY62128EV30LL-45SXA Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFS4115TRLPBF irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f
IRFS4115TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 62A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 1291 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.79 EUR
10+4.44 EUR
100+3.1 EUR
Mindestbestellmenge: 3 Stücke
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IRFS4127TRLPBF irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192
IRFS4127TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
auf Bestellung 3159 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.14 EUR
10+4.03 EUR
100+2.82 EUR
Mindestbestellmenge: 3 Stücke
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IRFS4615TRLPBF irfs4615pbf.pdf?fileId=5546d462533600a40153563a456a21bb
IRFS4615TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
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IRLR3636TRPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
auf Bestellung 24010 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.68 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
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IRLS3034TRL7PP irls3034-7ppbf.pdf?fileId=5546d462533600a401535671af462705
IRLS3034TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Produkt ist nicht verfügbar
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IRLS3034TRLPBF irls3034pbf.pdf?fileId=5546d462533600a401535671b7472707
IRLS3034TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
auf Bestellung 3977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.74 EUR
10+3.75 EUR
100+2.62 EUR
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IRLS3036TRLPBF irls3036pbf.pdf?fileId=5546d462533600a401535671c778270d
IRLS3036TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
auf Bestellung 5081 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.85 EUR
10+4.5 EUR
100+3.18 EUR
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IRLS4030TRL7PP irls4030-7ppbf.pdf?fileId=5546d462533600a401535671d8902713
IRLS4030TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.46 EUR
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IRLS4030TRLPBF irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715
IRLS4030TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.63 EUR
10+3.68 EUR
100+2.57 EUR
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CY2CC910OXI-1 cy2cc910_8.pdf
CY2CC910OXI-1
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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CY2CC910OXI-1T cy2cc910_8.pdf
CY2CC910OXI-1T
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C10612DV33-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1306CV25-167BZC cy7c130%283%2C6%29cv25.pdf
CY7C1306CV25-167BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR
Voltage - Supply: 2.4V ~ 2.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1315JV18-300BZC CY7C1311%2813%2C15%29%2C1911JV18_8.pdf
CY7C1315JV18-300BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1423JV18-250BZXC CY7C1422,3,4,9JV18.pdf
CY7C1423JV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1423JV18-267BZXCT CY7C1422,3,4,9JV18.pdf
CY7C1423JV18-267BZXCT
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 267 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C20434-12LQXIT Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY8C20434-12LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Produkt ist nicht verfügbar
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CYONS2000-LBXC
CYONS2000-LBXC
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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CYONS2001-LBXC
CYONS2001-LBXC
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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CYONS2100-LBXC CYONS2100.pdf
CYONS2100-LBXC
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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CYONS2101-LBXC
CYONS2101-LBXC
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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CYONS2110-LBXC
CYONS2110-LBXC
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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CYWB0224ABM-BVXI CYWB0224%2C26ABS%2CABM.pdf
CYWB0224ABM-BVXI
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYWB0224ABMX-FDXIT CYWB0224,26ABS,ABM.pdf
CYWB0224ABMX-FDXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Produkt ist nicht verfügbar
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CYWB0224ABS-BVXIT download
CYWB0224ABS-BVXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
Produkt ist nicht verfügbar
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CYWB0226ABMX-FDXIT CYWB0224,26ABS,ABM.pdf
CYWB0226ABMX-FDXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Produkt ist nicht verfügbar
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CYWB0226ABS-BVXIT download
CYWB0226ABS-BVXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF1404ZGPBF IRF1404ZGPBF.pdf
IRF1404ZGPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7665S2TR1PBF IRF7665S2TR%281%29PbF.pdf
IRF7665S2TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Produkt ist nicht verfügbar
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IRF8707GTRPBF IRF8707GPbF.pdf
IRF8707GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8714GTRPBF IRF8714GPbF.pdf
IRF8714GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8721GTRPBF IRF8721GPbF.pdf
IRF8721GTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
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IRFB3004GPBF IR_PartNumberingSystem.pdf
IRFB3004GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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IRFB3006GPBF irfb3006gpbf.pdf?fileId=5546d462533600a4015356123f051de7
IRFB3006GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRGI4056DPBF irgi4056dpbf.pdf
IRGI4056DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 18A 34W TO220FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Gate Charge: 25 nC
Test Condition: 400V, 9A, 22Ohm, 15V
Switching Energy: 59µJ (on), 177µJ (off)
Td (on/off) @ 25°C: 34ns/84ns
IGBT Type: Trench
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IRLB3813PBF irlb3813pbf.pdf?fileId=5546d462533600a4015356603cfe258b
IRLB3813PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
auf Bestellung 11150 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.49 EUR
50+2.19 EUR
100+1.97 EUR
500+1.57 EUR
1000+1.45 EUR
2000+1.34 EUR
5000+1.23 EUR
10000+1.16 EUR
Mindestbestellmenge: 4 Stücke
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IRF8707GPBF IRF8707GPbF.pdf
IRF8707GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IRF8714GPBF IRF8714GPbF.pdf
IRF8714GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
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IRF8721GPBF IRF8721GPbF.pdf
IRF8721GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
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IRF6718L2TR1PBF IRF6718L2TR%281%29PbF.pdf
IRF6718L2TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 61A DIRECTFET
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
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IRF6718L2TRPBF IRF6718L2TR%281%29PbF.pdf
IRF6718L2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 61A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
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AGIGA8003-004ACA
AGIGA8003-004ACA
Hersteller: Infineon Technologies
Description: MODUL NVRAM 4MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 4MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8004-008ACA
AGIGA8004-008ACA
Hersteller: Infineon Technologies
Description: MODUL NVRAM 8MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 8MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8005-016ACA
AGIGA8005-016ACA
Hersteller: Infineon Technologies
Description: MODULE NVRAM 16MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 16MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8006-032ACA
AGIGA8006-032ACA
Hersteller: Infineon Technologies
Description: MODULE NVRAM 32MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 32MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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AGIGA8007-064ACA
AGIGA8007-064ACA
Hersteller: Infineon Technologies
Description: MODULE NVRAM 64MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 64MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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CY24293ZXCT download
CY24293ZXCT
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
Produkt ist nicht verfügbar
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CY24378ZXC
CY24378ZXC
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 2PR 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 16-TSSOP
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CY26121KZI-21 CY26121.pdf
CY26121KZI-21
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 16TSSOP
Frequency - Max: 33.33MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
Produkt ist nicht verfügbar
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CY3210-PLOC10
Hersteller: Infineon Technologies
Description: PSOC WITH C COMPILER EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Platform: PSoC with C Compiler
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3210-PSOCEVAL1-U
Hersteller: Infineon Technologies
Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3660 CY3660%20enCoRe%20V_DVK%20Kit.pdf
Hersteller: Infineon Technologies
Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3675-LCC4A CY3675%20Clock%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: BOARD ADAPTER LCC4A
Packaging: Box
For Use With/Related Products: CY25701, CY25702
Accessory Type: Socket Adapter
Utilized IC / Part: CY25701, CY25702
Produkt ist nicht verfügbar
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CY3675-LCC6A CY3675%20Clock%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: BOARD ADAPTER LCC6A
Packaging: Box
For Use With/Related Products: CY2X013, CY2X014, CY2XF23, CY2XF24, CY2XF32, CY2XF33, CY2XF34
Accessory Type: Socket Adapter
Utilized IC / Part: CY2X013, CY2X014, CY2XF23, CY2XF24, CY2XF32, CY2XF33, CY2XF34
Produkt ist nicht verfügbar
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CY3675-QFN24A CY3675%20Clock%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: BOARD ADAPTER QFN24A
Packaging: Box
Accessory Type: Socket Adapter
Utilized IC / Part: CY2544, CY2545, CY2548
Produkt ist nicht verfügbar
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CY3675-QFN8A CY3675%20Clock%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: BOARD ADAPTER QFN8A
Packaging: Box
For Use With/Related Products: CY22M1, CY22U1
Accessory Type: Socket Adapter
Utilized IC / Part: CY22M1, CY22U1
Produkt ist nicht verfügbar
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CY3675-SOIC8A CY3675%20Clock%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: BOARD ADAPTER SOIC8A
Packaging: Box
For Use With/Related Products: CY25402, CY25403, CY25422, CY25423, CY25482, CY25483
Accessory Type: Socket Adapter
Utilized IC / Part: CY25402, CY25403, CY25422, CY25423, CY25482, CY25483
Produkt ist nicht verfügbar
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CY3675-TSSOP20B CY3675%20Clock%20Programming%20Kit.pdf
Hersteller: Infineon Technologies
Description: BOARD ADAPTER TSSOP20B
Packaging: Box
For Use With/Related Products: CY25404
Accessory Type: Socket Adapter
Utilized IC / Part: CY25404
Part Status: Active
Produkt ist nicht verfügbar
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CY36800J CY36800%20InstaClock%20Brochure.pdf
CY36800J
Hersteller: Infineon Technologies
Description: KIT PROGRAM INSTACLOCK JAPAN
Contents: Board(s)
Type: Programmer
For Use With/Related Products: CY22800
Packaging: Box
Produkt ist nicht verfügbar
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CY62128EV30LL-45SXA download
CY62128EV30LL-45SXA
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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