Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129273) > Seite 144 nach 2155
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CY7C1568KV18-550BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 550 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 680 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1570KV18-400BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1570KV18-450BZC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1570KV18-500BZC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 500 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1570KV18-500BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 500 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 680 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5250TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 45A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5300TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 40A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5250TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 45A/100A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5300TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 40A/100A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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ITS5215LCUMA1 | Infineon Technologies |
Description: IC POWER SW PG-DSO-12-9Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-12-9 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ITS5215LCUMA1 | Infineon Technologies |
Description: IC POWER SW PG-DSO-12-9Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-12-9 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS149NKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 14mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 19A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS949NKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 14mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 19A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-5-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPP023NE7N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 273µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP023NE7N3 G | Infineon Technologies | Description: MOSFET N-CH 75V 120A TO220 |
Produkt ist nicht verfügbar |
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BSC017N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 30A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 85µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC026N02KSGAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 25A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC027N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 24A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 49µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC028N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 23A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
auf Bestellung 269 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC030N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 23A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 49µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V |
auf Bestellung 3962 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC031N06NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8-1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 1238 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC046N02KSGAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 19A/80A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
auf Bestellung 4773 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC054N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 17A/81A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 27µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC057N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 16A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 114W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 73µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V |
auf Bestellung 24697 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC060N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 14.9/90A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC072N03LDGATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 11.5A 8TDSON |
Produkt ist nicht verfügbar |
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BSC080P03LSGAUMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 16A/30A TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC093N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 13A/49A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V Power Dissipation (Max): 2.5W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V |
auf Bestellung 8783 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC100N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 12A/50A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 23µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC110N06NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 23µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC123N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 11A/55A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V Power Dissipation (Max): 2.5W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC150N03LDGATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active |
auf Bestellung 47366 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC190N15NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 50A TDSON-8-1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V |
auf Bestellung 11555 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC340N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 12µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V |
auf Bestellung 11900 Stücke: Lieferzeit 10-14 Tag (e) |
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BSD235C L6327 | Infineon Technologies |
Description: MOSFET N/P-CH 20V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Supplier Device Package: PG-SOT363-PO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSL316CL6327HTSA1 | Infineon Technologies |
Description: MOSFET N/P-CH 30V TSOP-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 3.7µA Supplier Device Package: PG-TSOP6-6 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSO220N03MDGXUMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active |
auf Bestellung 7373 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP452HUMA1 | Infineon Technologies |
Description: IC POWER SW PG-SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 110852 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP742RXUMA1 | Infineon Technologies |
Description: IC POWER SW PG-DSO-8-6Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 250mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-6 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 9586 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP742RIXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 250mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-6 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 13737 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP752TXUMA1 | Infineon Technologies |
Description: IC POWER SW PG-DSO-8-24Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 52V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-24 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 5161 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP76E6433HUMA1 | Infineon Technologies |
Description: IC POWER SW PG-SOT223-4Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 28119 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP78HUMA1 | Infineon Technologies |
Description: IC POWER SW PG-SOT223-4Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 33988 Stücke: Lieferzeit 10-14 Tag (e) |
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BSR202NL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 3.8A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 30µA Supplier Device Package: PG-SC59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2142 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS215PL6327HTSA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 1.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 11µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS315PL6327HTSA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 1.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-SOT23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTM7700GXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO28Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 80mOhm LS, 110mOhm HS Applications: DC Motors, General Purpose Current - Peak Output: 9.5A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: PG-DSO-28 Fault Protection: Over Temperature, Short Circuit, UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTM7710GXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO28Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 40mOhm LS, 70mOhm HS Applications: DC Motors, General Purpose Current - Peak Output: 15A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: PG-DSO-28 Fault Protection: Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTM7741GXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO28Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 100mOhm LS, 110mOhm HS Applications: DC Motors, General Purpose Current - Peak Output: 10A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: PG-DSO-28 Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTM7810KAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER TO263-15Features: Status Flag Packaging: Cut Tape (CT) Package / Case: TO-263-18 (15 Leads + 3 Tabs) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 110°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 14mOhm LS, 26mOhm HS Applications: DC Motors, General Purpose Current - Peak Output: 42A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: PG-TO263-15-1 Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTM7811KAUMA1 | Infineon Technologies |
Description: IC BRIDGE DRIVER PAR TO263-15 |
auf Bestellung 3316 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS118DATMA1 | Infineon Technologies |
Description: IC POWER SW PG-TO252-3-11Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 7220 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS134DATMA1 | Infineon Technologies |
Description: IC POWER SW PG-TO252-3-11Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 9624 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3118NHUMA1 | Infineon Technologies |
Description: IC POWER SW PG-SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.17A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 17773 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3134NHUMA1 | Infineon Technologies |
Description: IC POWER SW PG-SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 65466 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3160DAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 8mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 45V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-5-13 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Part Status: Active |
auf Bestellung 5199 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3205GXUMA1 | Infineon Technologies |
Description: IC POWER SW PG-DSO-8-24Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 700mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-24 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 5806 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3207NHUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 500mOhm (Max) Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 640mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 20848 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3405GXUMA1 | Infineon Technologies |
Description: IC POWER SW PG-DSO-8Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 700mOhm Input Type: Non-Inverting Voltage - Load: 10V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 350mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8 Fault Protection: Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 2327 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS3410GXUMA1 | Infineon Technologies |
Description: IC POWER SW PG-DSO-8Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
auf Bestellung 10189 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY7C1568KV18-550BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 680 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1570KV18-400BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1570KV18-450BZC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1570KV18-500BZC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1570KV18-500BZXC |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 680 Stücke
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| IRFH5250TR2PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5300TR2PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET N-CH 30V 40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5250TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 1.01 EUR |
| IRFH5300TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.89 EUR |
| ITS5215LCUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-12-9
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-DSO-12-9
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| ITS5215LCUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-12-9
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-DSO-12-9
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 4.14 EUR |
| 25+ | 3.8 EUR |
| 100+ | 3.4 EUR |
| 250+ | 3.22 EUR |
| BTS149NKSA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS949NKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP023NE7N3GXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.79 EUR |
| 10+ | 5.12 EUR |
| 50+ | 3.96 EUR |
| 100+ | 3.59 EUR |
| 500+ | 2.94 EUR |
| IPP023NE7N3 G |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220
Description: MOSFET N-CH 75V 120A TO220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC017N04NSGATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC026N02KSGAUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC027N04LSGATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.57 EUR |
| 14+ | 1.61 EUR |
| 50+ | 1.2 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.83 EUR |
| BSC028N06LS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.06 EUR |
| 10+ | 3.93 EUR |
| 50+ | 3.01 EUR |
| 100+ | 2.73 EUR |
| BSC030N04NSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V
auf Bestellung 3962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.95 EUR |
| 12+ | 1.87 EUR |
| 50+ | 1.39 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.98 EUR |
| BSC031N06NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 1238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.56 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.06 EUR |
| BSC046N02KSGAUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
auf Bestellung 4773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.3 EUR |
| 10+ | 2.75 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.37 EUR |
| 2000+ | 1.26 EUR |
| BSC054N04NSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 20+ | 1.08 EUR |
| 50+ | 0.8 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| BSC057N08NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
Description: MOSFET N-CH 80V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
auf Bestellung 24697 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.61 EUR |
| 10+ | 2.95 EUR |
| 50+ | 2.24 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.61 EUR |
| BSC060N10NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14.9/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Description: MOSFET N-CH 100V 14.9/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.59 EUR |
| 10+ | 4.3 EUR |
| 50+ | 3.3 EUR |
| 100+ | 2.98 EUR |
| 500+ | 2.42 EUR |
| BSC072N03LDGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 11.5A 8TDSON
Description: MOSFET 2N-CH 30V 11.5A 8TDSON
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC080P03LSGAUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| BSC093N04LSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 13A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Description: MOSFET N-CH 40V 13A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
auf Bestellung 8783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 22+ | 0.95 EUR |
| 50+ | 0.7 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| BSC100N06LS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.32 EUR |
| 15+ | 1.45 EUR |
| 50+ | 1.08 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |
| BSC110N06NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 18+ | 1.2 EUR |
| 50+ | 0.88 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| BSC123N08NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.56 EUR |
| 10+ | 2.25 EUR |
| 50+ | 1.69 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.19 EUR |
| BSC150N03LDGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 47366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 14+ | 1.58 EUR |
| 50+ | 1.18 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.81 EUR |
| BSC190N15NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 50A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V
Description: MOSFET N-CH 150V 50A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V
auf Bestellung 11555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.34 EUR |
| 10+ | 4.13 EUR |
| 50+ | 3.17 EUR |
| 100+ | 2.86 EUR |
| 500+ | 2.31 EUR |
| BSC340N08NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.64 EUR |
| 13+ | 1.67 EUR |
| 50+ | 1.24 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| BSD235C L6327 |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Description: MOSFET N/P-CH 20V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSL316CL6327HTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Description: MOSFET N/P-CH 30V TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSO220N03MDGXUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 7373 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.4 EUR |
| 50+ | 1.05 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.71 EUR |
| BSP452HUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 110852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.55 EUR |
| 10+ | 3.37 EUR |
| 25+ | 3.08 EUR |
| 100+ | 2.76 EUR |
| 250+ | 2.61 EUR |
| 500+ | 2.53 EUR |
| BSP742RXUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-DSO-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 9586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 10+ | 2.31 EUR |
| 25+ | 2.09 EUR |
| 100+ | 1.87 EUR |
| 250+ | 1.75 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.68 EUR |
| BSP742RIXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 13737 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.5 EUR |
| 25+ | 2.27 EUR |
| 100+ | 2.02 EUR |
| 250+ | 1.9 EUR |
| 500+ | 1.83 EUR |
| BSP752TXUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-8-24
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-DSO-8-24
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4 EUR |
| 10+ | 2.94 EUR |
| 25+ | 2.68 EUR |
| 100+ | 2.39 EUR |
| 250+ | 2.26 EUR |
| 500+ | 2.19 EUR |
| BSP76E6433HUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 28119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 11+ | 2.05 EUR |
| 25+ | 1.86 EUR |
| 100+ | 1.64 EUR |
| 250+ | 1.55 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.48 EUR |
| BSP78HUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 33988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 10+ | 2.78 EUR |
| 25+ | 2.53 EUR |
| 100+ | 2.26 EUR |
| 250+ | 2.13 EUR |
| 500+ | 2.05 EUR |
| BSR202NL6327HTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 23+ | 0.92 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| BSS215PL6327HTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS315PL6327HTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTM7700GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 80mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 9.5A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 80mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 9.5A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTM7710GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTM7741GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTM7810KAUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER TO263-15
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-18 (15 Leads + 3 Tabs)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 14mOhm LS, 26mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 42A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-TO263-15-1
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER TO263-15
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: TO-263-18 (15 Leads + 3 Tabs)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 14mOhm LS, 26mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 42A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-TO263-15-1
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTM7811KAUMA1 |
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Hersteller: Infineon Technologies
Description: IC BRIDGE DRIVER PAR TO263-15
Description: IC BRIDGE DRIVER PAR TO263-15
auf Bestellung 3316 Stücke:
Lieferzeit 10-14 Tag (e)
| BTS118DATMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-TO252-3-11
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-TO252-3-11
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 7220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.14 EUR |
| 10+ | 3.06 EUR |
| 25+ | 2.8 EUR |
| 100+ | 2.49 EUR |
| 250+ | 2.34 EUR |
| 500+ | 2.27 EUR |
| BTS134DATMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-TO252-3-11
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-TO252-3-11
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 9624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 3.01 EUR |
| 25+ | 2.75 EUR |
| 100+ | 2.45 EUR |
| 250+ | 2.32 EUR |
| 500+ | 2.24 EUR |
| BTS3118NHUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 17773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.45 EUR |
| 25+ | 2.23 EUR |
| 100+ | 1.99 EUR |
| 250+ | 1.87 EUR |
| 500+ | 1.8 EUR |
| BTS3134NHUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 65466 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 3 EUR |
| 25+ | 2.74 EUR |
| 100+ | 2.44 EUR |
| 250+ | 2.3 EUR |
| 500+ | 2.23 EUR |
| BTS3160DAUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-13
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-13
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
auf Bestellung 5199 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.74 EUR |
| 10+ | 4.31 EUR |
| 25+ | 3.95 EUR |
| 100+ | 3.55 EUR |
| 250+ | 3.36 EUR |
| 500+ | 3.31 EUR |
| BTS3205GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-8-24
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-DSO-8-24
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 5806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 13+ | 1.67 EUR |
| 25+ | 1.51 EUR |
| 100+ | 1.33 EUR |
| 250+ | 1.25 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.18 EUR |
| BTS3207NHUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 500mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 640mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 500mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 640mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 20848 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 10+ | 2.45 EUR |
| 25+ | 2.32 EUR |
| 100+ | 1.9 EUR |
| 250+ | 1.78 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.25 EUR |
| BTS3405GXUMA1 |
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Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-8
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 10V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 350mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-DSO-8
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 10V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 350mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 2327 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.37 EUR |
| 25+ | 2.15 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.8 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.71 EUR |
| BTS3410GXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-8
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC POWER SW PG-DSO-8
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 10189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.58 EUR |
| 10+ | 2.63 EUR |
| 25+ | 2.4 EUR |
| 100+ | 2.14 EUR |
| 250+ | 2.01 EUR |
| 500+ | 1.94 EUR |





























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