Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126471) > Seite 144 nach 2108
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CY14B104NA-ZS25XIT | Infineon Technologies |
Description: IC NVSRAM 4MBIT PAR 44TSOP IIMemory Organization: 256K x 16 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Part Status: Active Supplier Device Package: 44-TSOP II Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1570KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGADigiKey Programmable: Not Verified Memory Organization: 2M x 36 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 400 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 272 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1568KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGADigiKey Programmable: Not Verified Memory Organization: 4M x 18 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 400 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 136 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1543KV18-400BZI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAMemory Organization: 4M x 18 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 400 MHz Technology: SRAM - Synchronous, QDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) DigiKey Programmable: Not Verified Memory Size: 72Mbit Memory Type: Volatile Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C20236A-24LKXI | Infineon Technologies |
Description: MCU 8K FLASH 1K SRAM 16QFNPackaging: Tray Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Number of I/O: 13 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C20396A-24LQXI | Infineon Technologies |
Description: MCU 16K FLASH 2K SRAM 24QFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C20446A-24LQXI | Infineon Technologies |
Description: MCU 16K FLASH 2K SRAM 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C20546A-24PVXI | Infineon Technologies |
Description: IC MCU 16K FLASH 2K SRAM 48SSOPPackaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: I²C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-SSOP Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20646A-24LTXI | Infineon Technologies |
Description: MCU 16K FLASH 2K SRAM 48QFNPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (7x7) Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8CPLC20-28PVXI | Infineon Technologies |
Description: IC PLC PSOC CMOS 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Baud Rates: 2.4k Voltage - Supply: 4.75V ~ 5.25V Data Format: FSK Supplier Device Package: 28-SSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8CPLC20-48LFXI | Infineon Technologies |
Description: IC PLC PSOC CMOS 48QFNPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Baud Rates: 2.4k Voltage - Supply: 4.75V ~ 5.25V Data Format: FSK Supplier Device Package: 48-QFN (7x7) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C20336A-24LQXI | Infineon Technologies |
Description: IC CAPSENSE PSOC 8K FLASH 24QFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C20436A-24LQXI | Infineon Technologies |
Description: IC CAPSENSE PSOC 8K FLASH 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
auf Bestellung 2090 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20466A-24LQXI | Infineon Technologies |
Description: IC CAPSENSE PSOC 32K 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (32kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 980 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY14E256LA-SZ25XIT | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 32SOICPackaging: Tape & Reel (TR) Package / Case: 32-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY62177EV30LL-55ZXIT | Infineon Technologies |
Description: IC SRAM 32MBIT PARALLEL 48TSOP IDigiKey Programmable: Not Verified Memory Organization: 4M x 8, 2M x 16 Access Time: 55 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 55ns Supplier Device Package: 48-TSOP I Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.2V ~ 3.7V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 32Mbit Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C28243-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 20SSOPPackaging: Tube Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 20-SSOP Part Status: Active Number of I/O: 16 DigiKey Programmable: Not Verified |
auf Bestellung 1853 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C28623-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 48QFNPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I²C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Part Status: Obsolete Number of I/O: 44 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C28643-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 48QFNPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Part Status: Active Number of I/O: 44 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C28645-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 48QFNPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Part Status: Active Number of I/O: 44 DigiKey Programmable: Not Verified |
auf Bestellung 2062 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7739L2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 46A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7749L2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 33A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7759L2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 26A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7769L2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 375A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLML0060TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 2.7A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLML0100TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 1.6A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLML0030TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 5.3A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.2A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 15 V |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLML2030TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 2.7A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7815TRPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 5.1A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7351TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 60V 8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9310TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 20A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5301TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 35A 5X6 PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5302TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 32A 5X6 PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5306TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 15A 5X6 PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLML0060TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 2.7A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLML0100TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 1.6A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLML0030TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 5.3A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.2A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 15 V |
auf Bestellung 98549 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLML2030TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 2.7A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V |
auf Bestellung 91467 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7815TRPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 5.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V |
auf Bestellung 7549 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7351TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 60V 8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 24988 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9310TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 20A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5301TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 35A/100A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5302TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 32A/100A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFH5306TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 15A/44A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7739L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 46A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7749L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 33A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7759L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 26A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7779L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 375A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7799L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 250V 375A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V Power Dissipation (Max): 4.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6714 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7815PBF | Infineon Technologies |
Description: MOSFET N-CH 150V 5.1A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF7351PBF | Infineon Technologies |
Description: MOSFET 2N-CH 60V 8A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF9310PBF | Infineon Technologies |
Description: MOSFET P-CH 30V 20A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY14B104K-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 4MBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1350 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1512KV18-300BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 680 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1514KV18-333BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 333 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1360 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1515KV18-300BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 272 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1518KV18-333BZC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 333 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 680 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1518KV18-333BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 333 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1360 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1520KV18-300BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1360 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1545KV18-400BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY14B104NA-ZS25XIT |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Memory Organization: 256K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Memory Organization: 256K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| CY7C1570KV18-400BZXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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| CY7C1568KV18-400BZXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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| CY7C1543KV18-400BZI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Memory Size: 72Mbit
Memory Type: Volatile
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Memory Size: 72Mbit
Memory Type: Volatile
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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| CY8C20236A-24LKXI |
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Hersteller: Infineon Technologies
Description: MCU 8K FLASH 1K SRAM 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: MCU 8K FLASH 1K SRAM 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
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| CY8C20396A-24LQXI |
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Hersteller: Infineon Technologies
Description: MCU 16K FLASH 2K SRAM 24QFN
Description: MCU 16K FLASH 2K SRAM 24QFN
Produkt ist nicht verfügbar
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| CY8C20446A-24LQXI |
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Hersteller: Infineon Technologies
Description: MCU 16K FLASH 2K SRAM 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: MCU 16K FLASH 2K SRAM 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CY8C20546A-24PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 16K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.39 EUR |
| 10+ | 12.98 EUR |
| 25+ | 12.38 EUR |
| 100+ | 10.75 EUR |
| 250+ | 10.27 EUR |
| 500+ | 9.37 EUR |
| CY8C20646A-24LTXI |
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Hersteller: Infineon Technologies
Description: MCU 16K FLASH 2K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: MCU 16K FLASH 2K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CY8CPLC20-28PVXI |
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Hersteller: Infineon Technologies
Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 28-SSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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| CY8CPLC20-48LFXI |
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Hersteller: Infineon Technologies
Description: IC PLC PSOC CMOS 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Description: IC PLC PSOC CMOS 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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| CY8C20336A-24LQXI |
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Hersteller: Infineon Technologies
Description: IC CAPSENSE PSOC 8K FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 8K FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2450 Stücke
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| CY8C20436A-24LQXI |
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Hersteller: Infineon Technologies
Description: IC CAPSENSE PSOC 8K FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 8K FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.03 EUR |
| 10+ | 7.69 EUR |
| 25+ | 7.09 EUR |
| 100+ | 6.44 EUR |
| 490+ | 5.95 EUR |
| 980+ | 5.8 EUR |
| 1470+ | 5.72 EUR |
| CY8C20466A-24LQXI |
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Hersteller: Infineon Technologies
Description: IC CAPSENSE PSOC 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 32K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CY14E256LA-SZ25XIT |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CY62177EV30LL-55ZXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8, 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.7V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8, 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.7V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CY8C28243-24PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Part Status: Active
Number of I/O: 16
DigiKey Programmable: Not Verified
auf Bestellung 1853 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.28 EUR |
| 10+ | 15.84 EUR |
| 66+ | 13.83 EUR |
| 132+ | 13.33 EUR |
| 264+ | 12.9 EUR |
| 528+ | 12.55 EUR |
| 1056+ | 12.28 EUR |
| CY8C28623-24LTXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C28643-24LTXI |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
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| CY8C28645-24LTXI |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.03 EUR |
| 10+ | 19.69 EUR |
| 25+ | 18.36 EUR |
| 100+ | 16.91 EUR |
| 260+ | 16.18 EUR |
| 520+ | 15.77 EUR |
| 1040+ | 15.42 EUR |
| IRF7739L2TR1PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7749L2TR1PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7759L2TR1PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V
Description: MOSFET N-CH 75V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7769L2TR1PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Description: MOSFET N-CH 100V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLML0060TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Description: MOSFET N-CH 60V 2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.23 EUR |
| 9000+ | 0.19 EUR |
| IRLML0100TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Description: MOSFET N-CH 100V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLML0030TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 5.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 15 V
Description: MOSFET N-CH 30V 5.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 15 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
| IRLML2030TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Description: MOSFET N-CH 30V 2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| 9000+ | 0.14 EUR |
| IRF7815TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V
Description: MOSFET N-CH 150V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 1.14 EUR |
| IRF7351TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 1.15 EUR |
| 8000+ | 1.08 EUR |
| 12000+ | 1.06 EUR |
| IRF9310TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
Description: MOSFET P-CH 30V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5301TR2PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
Description: MOSFET N-CH 30V 35A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5302TR2PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Description: MOSFET N-CH 30V 32A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5306TR2PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V
Description: MOSFET N-CH 30V 15A 5X6 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLML0060TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Description: MOSFET N-CH 60V 2.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 34+ | 0.63 EUR |
| 50+ | 0.45 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| IRLML0100TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Description: MOSFET N-CH 100V 1.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLML0030TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 5.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 15 V
Description: MOSFET N-CH 30V 5.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 15 V
auf Bestellung 98549 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 40+ | 0.54 EUR |
| 55+ | 0.39 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| IRLML2030TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 2.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Description: MOSFET N-CH 30V 2.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
auf Bestellung 91467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 45+ | 0.46 EUR |
| 63+ | 0.33 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.21 EUR |
| IRF7815TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V
Description: MOSFET N-CH 150V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V
auf Bestellung 7549 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.14 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.31 EUR |
| 2000+ | 1.21 EUR |
| IRF7351TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 24988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 2.7 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.33 EUR |
| 2000+ | 1.3 EUR |
| IRF9310TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
Description: MOSFET P-CH 30V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5301TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
Description: MOSFET N-CH 30V 35A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5114 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5302TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Description: MOSFET N-CH 30V 32A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH5306TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A/44A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V
Description: MOSFET N-CH 30V 15A/44A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7739L2TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7749L2TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
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| IRF7759L2TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V
Description: MOSFET N-CH 75V 26A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25 V
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| IRF7779L2TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 150V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
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| IRF7799L2TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6714 pF @ 25 V
Description: MOSFET N-CH 250V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 21A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6714 pF @ 25 V
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| IRF7815PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5.1A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V
Description: MOSFET N-CH 150V 5.1A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 75 V
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| IRF7351PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
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| IRF9310PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 20A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
Description: MOSFET P-CH 30V 20A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
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| CY14B104K-ZS45XI |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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| CY7C1512KV18-300BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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| CY7C1514KV18-333BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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| CY7C1515KV18-300BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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| CY7C1518KV18-333BZC |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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| CY7C1518KV18-333BZXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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| CY7C1520KV18-300BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
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| CY7C1545KV18-400BZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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