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BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 Infineon Technologies BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25 Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
auf Bestellung 22157 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.05 EUR
10+3.11 EUR
100+2.35 EUR
500+1.93 EUR
1000+1.91 EUR
Mindestbestellmenge: 5
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BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
auf Bestellung 34970 Stücke:
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BSC100N10NSFGATMA1 BSC100N10NSFGATMA1 Infineon Technologies BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57 Description: MOSFET N-CH 100V 11.4/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
auf Bestellung 10442 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
10+2.62 EUR
100+1.80 EUR
500+1.45 EUR
Mindestbestellmenge: 5
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 Infineon Technologies BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49 Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
auf Bestellung 12945 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
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BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 Infineon Technologies BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571 Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 7943 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
10+3.14 EUR
100+2.27 EUR
500+1.95 EUR
Mindestbestellmenge: 5
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BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 Infineon Technologies BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4 Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
auf Bestellung 6422 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
11+1.66 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.80 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
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BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 Infineon Technologies BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948 Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.67 EUR
10+4.17 EUR
100+3.06 EUR
500+2.81 EUR
Mindestbestellmenge: 4
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BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 Infineon Technologies BSZ520N15NS3+Rev2.2.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0dd612226c Description: MOSFET N-CH 150V 21A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
auf Bestellung 6273 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+1.99 EUR
100+1.43 EUR
500+1.15 EUR
1000+1.03 EUR
2000+0.98 EUR
Mindestbestellmenge: 7
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 Infineon Technologies IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 5678 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.39 EUR
10+4.70 EUR
100+3.36 EUR
500+2.77 EUR
Mindestbestellmenge: 3
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IPB034N06N3GATMA1 IPB034N06N3GATMA1 Infineon Technologies IPB034N06N3_G.pdf Description: MOSFET N-CH 60V 100A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IPB036N12N3 G IPB036N12N3 G Infineon Technologies IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56 Description: MOSFET N-CH 120V 180A TO263-7
auf Bestellung 5518 Stücke:
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IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4 Description: MOSFET N-CH 120V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
auf Bestellung 2546 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
10+4.11 EUR
100+3.10 EUR
500+2.82 EUR
Mindestbestellmenge: 3
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IPB039N10N3GATMA1 IPB039N10N3GATMA1 Infineon Technologies IPB039N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0 Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
auf Bestellung 29429 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.88 EUR
10+3.57 EUR
100+2.76 EUR
500+2.49 EUR
Mindestbestellmenge: 4
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 Infineon Technologies IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7 Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
auf Bestellung 1878 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.96 EUR
10+6.59 EUR
100+5.79 EUR
500+4.57 EUR
Mindestbestellmenge: 2
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IPB123N10N3GATMA1 IPB123N10N3GATMA1 Infineon Technologies Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+2.04 EUR
100+1.50 EUR
500+1.21 EUR
Mindestbestellmenge: 7
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IPB200N15N3 G IPB200N15N3 G Infineon Technologies IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO263-3
auf Bestellung 4367 Stücke:
Lieferzeit 10-14 Tag (e)
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IPB200N25N3GATMA1 IPB200N25N3GATMA1 Infineon Technologies IPP_B_I_200N25N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971 Description: MOSFET N-CH 250V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.20 EUR
10+8.26 EUR
100+6.03 EUR
500+5.26 EUR
Mindestbestellmenge: 2
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
10+3.90 EUR
100+2.85 EUR
500+2.30 EUR
Mindestbestellmenge: 4
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IPB600N25N3GATMA1 IPB600N25N3GATMA1 Infineon Technologies IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c Description: MOSFET N-CH 250V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 2135 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.20 EUR
10+4.06 EUR
100+2.85 EUR
500+2.33 EUR
Mindestbestellmenge: 3
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IPB60R099CPATMA1 IPB60R099CPATMA1 Infineon Technologies IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
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IPB60R280C6ATMA1 IPB60R280C6ATMA1 Infineon Technologies IPB60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4413ff0274a Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPB60R600CPATMA1 IPB60R600CPATMA1 Infineon Technologies IPB60R600CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792f22ec0462 Description: MOSFET N-CH 600V 6.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
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IPD110N12N3GBUMA1 IPD110N12N3GBUMA1 Infineon Technologies IPD_S110N12N3_G.pdf Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
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IPD320N20N3GBTMA1 IPD320N20N3GBTMA1 Infineon Technologies Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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IPD600N25N3GBTMA1 IPD600N25N3GBTMA1 Infineon Technologies Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
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IPB036N12N3 G IPB036N12N3 G Infineon Technologies IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56 Description: MOSFET N-CH 120V 180A TO263-7
auf Bestellung 5518 Stücke:
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IPB200N15N3 G IPB200N15N3 G Infineon Technologies IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO263-3
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IR11672ASPBF IR11672ASPBF Infineon Technologies ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Description: IC MOSFET DRIVER 200V 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR11682STRPBF IR11682STRPBF Infineon Technologies ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR1168SPBF IR1168SPBF Infineon Technologies ir1168.pdf?fileId=5546d462533600a4015355c467fa1658 Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2521DSTRPBF IR2521DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC BALLAST CTLR ADAPTIVE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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IR3411SPBF IR3411SPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC SWITCH HIGH SIDE D2PAK-5
Packaging: Tube
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IR3503MTRPBF IR3503MTRPBF Infineon Technologies IR3503.pdf Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3529MTRPBF IR3529MTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC CTRL XPHASE CPU/ASIC 20-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Multiphase Controller
Current - Supply: 2mA
Supplier Device Package: 20-MLPQ (4x4)
Produkt ist nicht verfügbar
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IR3640MPBF IR3640MPBF Infineon Technologies IR3640MPBF.pdf Description: IC REG CTRLR BUCK 20MLPQ
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Supplier Device Package: 20-MLPQ (3x4)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start
Output Phases: 1
Duty Cycle (Max): 92%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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IR3725MTRPBF IR3725MTRPBF Infineon Technologies IR3725.pdf Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Part Status: Obsolete
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR3832WMTR1PBF IR3832WMTR1PBF Infineon Technologies ir3832wm.pdf?fileId=5546d462533600a4015355d1eb5817c7 Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Produkt ist nicht verfügbar
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IR3840AMTR1PBF IR3840AMTR1PBF Infineon Technologies ir3840am.pdf?fileId=5546d462533600a4015355d20aff17cf Description: IC REG BUCK ADJ 14A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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IR3840WMTR1PBF IR3840WMTR1PBF Infineon Technologies ir3840wm.pdf?fileId=5546d462533600a4015355d21b6217d3 Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3841WMTR1PBF IR3841WMTR1PBF Infineon Technologies ir3841wm.pdf?fileId=5546d462533600a4015355d22bdc17d7 Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3842AMTR1PBF IR3842AMTR1PBF Infineon Technologies ir3842am.pdf?fileId=5546d462533600a4015355d2321b17d9 Description: IC REG BUCK ADJ 6A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3842WMTR1PBF IR3842WMTR1PBF Infineon Technologies ir3842wm.pdf?fileId=5546d462533600a4015355d54e8f17e8 Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3843AMTR1PBF IR3843AMTR1PBF Infineon Technologies ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3843WMTR1PBF IR3843WMTR1PBF Infineon Technologies ir3843wm.pdf?fileId=5546d462533600a4015355d5602f17ec Description: IC REG BUCK ADJ 2A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3856WMTR1PBF IR3856WMTR1PBF Infineon Technologies IR3856WMPbF.pdf Description: IC REG BUCK ADJUSTABLE 6A 17PQFN
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IRAC11662-100W IRAC11662-100W Infineon Technologies IRAC11662-100W.pdf Description: BOARD DEMO FOR IR11662
Packaging: Box
Voltage - Output: 16V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 6.25A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11662
Supplied Contents: Board(s)
Main Purpose: AC/DC, Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 100 W
Contents: Board(s)
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IRAM136-0760A Infineon Technologies iram136-0760a.pdf?fileId=5546d462533600a4015355d6881a1848 Description: IC MOD PWR HYBRID 600V 5A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 5 A
Voltage: 600 V
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IRAM136-0760A2 IRAM136-0760A2 Infineon Technologies iram136-0760a.pdf?fileId=5546d462533600a4015355d6881a1848 Description: IC MOD PWR HYBRID 600V 5A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 5 A
Voltage: 600 V
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IRAM336-025SB3 IRAM336-025SB3 Infineon Technologies IRAM336-025SB.pdf Description: IC HYBRID MULTI-CHIP 500V 2A
Packaging: Tube
Package / Case: 19-PowerSSIP Module, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Current: 2 A
Voltage: 500 V
Produkt ist nicht verfügbar
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IRAUDAMP4A IRAUDAMP4A Infineon Technologies iraudamp4a.pdf?fileId=5546d462533600a40153569abbd52bf3 Description: EVAL BOARD FOR IRF6645 IRS20957
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±25V ~ 35V
Max Output Power x Channels @ Load: 120W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IRF6645, IRS20957
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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IRDC3840W IRDC3840W Infineon Technologies irdc3840w.pdf?fileId=5546d462533600a40153569bd8072c3c Description: BOARD EVAL FOR IR3840W 12A CONV
Produkt ist nicht verfügbar
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IRDC3841W IRDC3841W Infineon Technologies reference-design-irdc3841w-5546d462533600a40153569be80f2c40 Description: BOARD EVAL FOR IR3841W 8A CONV
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 8A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3841W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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IRDC3842W IRDC3842W Infineon Technologies reference-design-irdc3842w-5546d462533600a40153569bf6ff2c44 Description: BOARD EVAL FOR IR3842W 4A CONV
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 4A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3842W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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IRDC3843W IRDC3843W Infineon Technologies reference-design-irdc3843w-5546d462533600a40153569bff152c46 Description: BOARD EVAL FOR IR3843W 2A CONV
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 2A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3843W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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IRDC3871 IRDC3871 Infineon Technologies irdc3871.pdf?fileId=5546d462533600a40153569f573e2c59 Description: BOARD EVAL FOR IRDC3871
Produkt ist nicht verfügbar
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IRF1405ZSTRL7PP IRF1405ZSTRL7PP Infineon Technologies irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5 Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6201TRPBF IRF6201TRPBF Infineon Technologies IRF6201PBF.pdf Description: MOSFET N-CH 20V 27A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 27A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8555 pF @ 16 V
Produkt ist nicht verfügbar
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IRF6706S2TR1PBF IRF6706S2TR1PBF Infineon Technologies IRF6706S2TR%281%29PbF.pdf Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
Produkt ist nicht verfügbar
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IRF6709S2TR1PBF IRF6709S2TR1PBF Infineon Technologies IRF6709S2TR(1)PbF.pdf Description: MOSFET N-CH 25V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 13 V
Produkt ist nicht verfügbar
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BSC042NE7NS3GATMA1 BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25
BSC042NE7NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
auf Bestellung 22157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
10+3.11 EUR
100+2.35 EUR
500+1.93 EUR
1000+1.91 EUR
Mindestbestellmenge: 5
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BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
auf Bestellung 34970 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC100N10NSFGATMA1 BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57
BSC100N10NSFGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11.4/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
auf Bestellung 10442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.62 EUR
100+1.80 EUR
500+1.45 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BSC190N12NS3GATMA1 BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49
BSC190N12NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
auf Bestellung 12945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
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BSC320N20NS3GATMA1 BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571
BSC320N20NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 7943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+3.14 EUR
100+2.27 EUR
500+1.95 EUR
Mindestbestellmenge: 5
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BSC520N15NS3GATMA1 BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4
BSC520N15NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
auf Bestellung 6422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.66 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.80 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
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BSC600N25NS3GATMA1 BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948
BSC600N25NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+4.17 EUR
100+3.06 EUR
500+2.81 EUR
Mindestbestellmenge: 4
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BSZ520N15NS3GATMA1 BSZ520N15NS3+Rev2.2.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0dd612226c
BSZ520N15NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
auf Bestellung 6273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.99 EUR
100+1.43 EUR
500+1.15 EUR
1000+1.03 EUR
2000+0.98 EUR
Mindestbestellmenge: 7
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IPB017N06N3GATMA1 IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea
IPB017N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 5678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.39 EUR
10+4.70 EUR
100+3.36 EUR
500+2.77 EUR
Mindestbestellmenge: 3
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IPB034N06N3GATMA1 IPB034N06N3_G.pdf
IPB034N06N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IPB036N12N3 G IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56
IPB036N12N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 180A TO263-7
auf Bestellung 5518 Stücke:
Lieferzeit 10-14 Tag (e)
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IPB038N12N3GATMA1 IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4
IPB038N12N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
auf Bestellung 2546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+4.11 EUR
100+3.10 EUR
500+2.82 EUR
Mindestbestellmenge: 3
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IPB039N10N3GATMA1 IPB039N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0
IPB039N10N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
auf Bestellung 29429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
10+3.57 EUR
100+2.76 EUR
500+2.49 EUR
Mindestbestellmenge: 4
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IPB107N20N3GATMA1 IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7
IPB107N20N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
auf Bestellung 1878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.96 EUR
10+6.59 EUR
100+5.79 EUR
500+4.57 EUR
Mindestbestellmenge: 2
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IPB123N10N3GATMA1 Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e
IPB123N10N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 1945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.04 EUR
100+1.50 EUR
500+1.21 EUR
Mindestbestellmenge: 7
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IPB200N15N3 G IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be
IPB200N15N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO263-3
auf Bestellung 4367 Stücke:
Lieferzeit 10-14 Tag (e)
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IPB200N25N3GATMA1 IPP_B_I_200N25N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971
IPB200N25N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.20 EUR
10+8.26 EUR
100+6.03 EUR
500+5.26 EUR
Mindestbestellmenge: 2
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IPB320N20N3GATMA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPB320N20N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.90 EUR
100+2.85 EUR
500+2.30 EUR
Mindestbestellmenge: 4
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IPB600N25N3GATMA1 IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c
IPB600N25N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 2135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.20 EUR
10+4.06 EUR
100+2.85 EUR
500+2.33 EUR
Mindestbestellmenge: 3
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IPB60R099CPATMA1 IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b
IPB60R099CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
auf Bestellung 4731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.69 EUR
10+8.62 EUR
100+6.31 EUR
500+5.55 EUR
Mindestbestellmenge: 2
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IPB60R280C6ATMA1 IPB60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4413ff0274a
IPB60R280C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R600CPATMA1 IPB60R600CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792f22ec0462
IPB60R600CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Produkt ist nicht verfügbar
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IPD110N12N3GBUMA1 IPD_S110N12N3_G.pdf
IPD110N12N3GBUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
Produkt ist nicht verfügbar
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IPD320N20N3GBTMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
IPD320N20N3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Produkt ist nicht verfügbar
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IPD600N25N3GBTMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
IPD600N25N3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Produkt ist nicht verfügbar
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BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
auf Bestellung 34970 Stücke:
Lieferzeit 10-14 Tag (e)
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IPB036N12N3 G IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56
IPB036N12N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 180A TO263-7
auf Bestellung 5518 Stücke:
Lieferzeit 10-14 Tag (e)
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IPB200N15N3 G IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be
IPB200N15N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO263-3
auf Bestellung 4367 Stücke:
Lieferzeit 10-14 Tag (e)
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IR11672ASPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
IR11672ASPBF
Hersteller: Infineon Technologies
Description: IC MOSFET DRIVER 200V 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR11682STRPBF ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a
IR11682STRPBF
Hersteller: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR1168SPBF ir1168.pdf?fileId=5546d462533600a4015355c467fa1658
IR1168SPBF
Hersteller: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2521DSTRPBF fundamentals-of-power-semiconductors
IR2521DSTRPBF
Hersteller: Infineon Technologies
Description: IC BALLAST CTLR ADAPTIVE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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IR3411SPBF Part_Number_Guide_Web.pdf
IR3411SPBF
Hersteller: Infineon Technologies
Description: IC SWITCH HIGH SIDE D2PAK-5
Packaging: Tube
Produkt ist nicht verfügbar
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IR3503MTRPBF IR3503.pdf
IR3503MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3529MTRPBF fundamentals-of-power-semiconductors
IR3529MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRL XPHASE CPU/ASIC 20-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Multiphase Controller
Current - Supply: 2mA
Supplier Device Package: 20-MLPQ (4x4)
Produkt ist nicht verfügbar
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IR3640MPBF IR3640MPBF.pdf
IR3640MPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 20MLPQ
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Supplier Device Package: 20-MLPQ (3x4)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start
Output Phases: 1
Duty Cycle (Max): 92%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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IR3725MTRPBF IR3725.pdf
IR3725MTRPBF
Hersteller: Infineon Technologies
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Part Status: Obsolete
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR3832WMTR1PBF ir3832wm.pdf?fileId=5546d462533600a4015355d1eb5817c7
IR3832WMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Produkt ist nicht verfügbar
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IR3840AMTR1PBF ir3840am.pdf?fileId=5546d462533600a4015355d20aff17cf
IR3840AMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 14A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.9V
Produkt ist nicht verfügbar
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IR3840WMTR1PBF ir3840wm.pdf?fileId=5546d462533600a4015355d21b6217d3
IR3840WMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3841WMTR1PBF ir3841wm.pdf?fileId=5546d462533600a4015355d22bdc17d7
IR3841WMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3842AMTR1PBF ir3842am.pdf?fileId=5546d462533600a4015355d2321b17d9
IR3842AMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3842WMTR1PBF ir3842wm.pdf?fileId=5546d462533600a4015355d54e8f17e8
IR3842WMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3843AMTR1PBF ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea
IR3843AMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3843WMTR1PBF ir3843wm.pdf?fileId=5546d462533600a4015355d5602f17ec
IR3843WMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 2A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IR3856WMTR1PBF IR3856WMPbF.pdf
IR3856WMTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 6A 17PQFN
Produkt ist nicht verfügbar
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IRAC11662-100W IRAC11662-100W.pdf
IRAC11662-100W
Hersteller: Infineon Technologies
Description: BOARD DEMO FOR IR11662
Packaging: Box
Voltage - Output: 16V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 6.25A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: IR11662
Supplied Contents: Board(s)
Main Purpose: AC/DC, Secondary Side
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 100 W
Contents: Board(s)
Produkt ist nicht verfügbar
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IRAM136-0760A iram136-0760a.pdf?fileId=5546d462533600a4015355d6881a1848
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 5A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 5 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IRAM136-0760A2 iram136-0760a.pdf?fileId=5546d462533600a4015355d6881a1848
IRAM136-0760A2
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 5A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 5 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IRAM336-025SB3 IRAM336-025SB.pdf
IRAM336-025SB3
Hersteller: Infineon Technologies
Description: IC HYBRID MULTI-CHIP 500V 2A
Packaging: Tube
Package / Case: 19-PowerSSIP Module, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Current: 2 A
Voltage: 500 V
Produkt ist nicht verfügbar
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IRAUDAMP4A iraudamp4a.pdf?fileId=5546d462533600a40153569abbd52bf3
IRAUDAMP4A
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRF6645 IRS20957
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: ±25V ~ 35V
Max Output Power x Channels @ Load: 120W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IRF6645, IRS20957
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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IRDC3840W irdc3840w.pdf?fileId=5546d462533600a40153569bd8072c3c
IRDC3840W
Hersteller: Infineon Technologies
Description: BOARD EVAL FOR IR3840W 12A CONV
Produkt ist nicht verfügbar
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IRDC3841W reference-design-irdc3841w-5546d462533600a40153569be80f2c40
IRDC3841W
Hersteller: Infineon Technologies
Description: BOARD EVAL FOR IR3841W 8A CONV
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 8A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3841W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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IRDC3842W reference-design-irdc3842w-5546d462533600a40153569bf6ff2c44
IRDC3842W
Hersteller: Infineon Technologies
Description: BOARD EVAL FOR IR3842W 4A CONV
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 4A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3842W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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IRDC3843W reference-design-irdc3843w-5546d462533600a40153569bff152c46
IRDC3843W
Hersteller: Infineon Technologies
Description: BOARD EVAL FOR IR3843W 2A CONV
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 2A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3843W
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
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IRDC3871 irdc3871.pdf?fileId=5546d462533600a40153569f573e2c59
IRDC3871
Hersteller: Infineon Technologies
Description: BOARD EVAL FOR IRDC3871
Produkt ist nicht verfügbar
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IRF1405ZSTRL7PP irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5
IRF1405ZSTRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6201TRPBF IRF6201PBF.pdf
IRF6201TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 27A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 27A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8555 pF @ 16 V
Produkt ist nicht verfügbar
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IRF6706S2TR1PBF IRF6706S2TR%281%29PbF.pdf
IRF6706S2TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
Produkt ist nicht verfügbar
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IRF6709S2TR1PBF IRF6709S2TR(1)PbF.pdf
IRF6709S2TR1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 13 V
Produkt ist nicht verfügbar
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