Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126343) > Seite 169 nach 2106

Wählen Sie Seite:   [  << Vorherige Seite ]  1 164 165 166 167 168 169 170 171 172 173 174 210 420 630 840 1050 1260 1470 1680 1890 2100 2106  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 Infineon Technologies Infineon-BAT15-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638961e2b4e86 Description: DIODE SCHOTTKY 4V 100MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 44698 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-6 E6327 BGS 12AL7-6 E6327 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 24306 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327XTSA1 BFP450H6327XTSA1 Infineon Technologies Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Description: RF TRANS NPN 5V 24GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 40539 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
31+0.69 EUR
35+0.62 EUR
100+0.54 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.45 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP640H6327XTSA1 BFP640H6327XTSA1 Infineon Technologies Infineon-BFP640-DS-v03_00-EN.pdf?fileId=5546d462689a790c01690f03a9ca3928 Description: RF TRANS NPN 4.5V 40GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 3293 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
30+0.7 EUR
34+0.63 EUR
100+0.55 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP650H6327XTSA1 BFP650H6327XTSA1 Infineon Technologies Infineon-BFP650-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03d00e3930 Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 16173 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
31+0.69 EUR
35+0.62 EUR
100+0.54 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.45 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT2402LSE6327XTSA1 BAT2402LSE6327XTSA1 Infineon Technologies Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95 Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 7686 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.05 EUR
15+1.48 EUR
25+1.33 EUR
100+1.18 EUR
250+1.11 EUR
500+1.06 EUR
1000+1.05 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA616H6327XTSA1 BGA616H6327XTSA1 Infineon Technologies BGA616_Rev2011.pdf Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 12342 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.48 EUR
10+2.13 EUR
25+2.01 EUR
100+1.84 EUR
250+1.75 EUR
500+1.68 EUR
1000+1.61 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGB741L7ESDE6327XTSA1 BGB741L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7 Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGB707L7ESDE6327XTSA1 BGB707L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4 Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 7501 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.96 EUR
13+1.7 EUR
25+1.59 EUR
100+1.46 EUR
250+1.38 EUR
500+1.33 EUR
1000+1.27 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3S1U-02LRH E6327 ESD5V3S1U-02LRH E6327 Infineon Technologies esd5v3s1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043243b5f17012475f71c984e73 Description: TVS DIODE 5.3VWM 11VC TSLP2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-6 E6327 BGS 12AL7-6 E6327 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 24306 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP 740FESD E6327 BFP 740FESD E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 4.7V 47GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB ~ 31dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP740H6327XTSA1 BFP740H6327XTSA1 Infineon Technologies Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4 Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ILD4001E6327HTSA1 ILD4001E6327HTSA1 Infineon Technologies ILD4001.pdf Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U02LRHE6327XTSA1 ESD5V3L1U02LRHE6327XTSA1 Infineon Technologies ESD5V3L1U-02LRH.pdf Description: TVS DIODE 5.3VWM 10VC PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ILD4035E6327HTSA1 ILD4035E6327HTSA1 Infineon Technologies ILD4035.pdf Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4120E6327XUMA1 ILD4120E6327XUMA1 Infineon Technologies ILD4120.pdf Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4120E6327XUMA1 ILD4120E6327XUMA1 Infineon Technologies ILD4120.pdf Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4035E6327HTSA1 ILD4035E6327HTSA1 Infineon Technologies ILD4035.pdf Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4001E6327HTSA1 ILD4001E6327HTSA1 Infineon Technologies ILD4001.pdf Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U-02LRH E6327 ESD5V3L1U-02LRH E6327 Infineon Technologies esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078 Description: TVS DIODE 5.3VWM 10VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U-02LRH E6327 ESD5V3L1U-02LRH E6327 Infineon Technologies esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078 Description: TVS DIODE 5.3VWM 10VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP740H6327XTSA1 BFP740H6327XTSA1 Infineon Technologies Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4 Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3084AMTRPBF IR3084AMTRPBF Infineon Technologies IR3084A.pdf Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.96 EUR
10+4.47 EUR
25+4.31 EUR
100+4.19 EUR
250+4.09 EUR
500+4.06 EUR
1000+4 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3086AMTRPBF IR3086AMTRPBF Infineon Technologies IR3086APbF.pdf Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.25 EUR
10+2.78 EUR
25+2.67 EUR
100+2.53 EUR
250+2.46 EUR
500+2.43 EUR
1000+2.39 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3621MTRPBF IR3621MTRPBF Infineon Technologies IR3621(PbF).pdf Description: IC REG CTRLR BUCK 32MLPQ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407STRLPBF IRF1407STRLPBF Infineon Technologies infineon-irf1407spbf-ds-en.pdf Description: MOSFET N-CH 75V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRL7PP IRF2804STRL7PP Infineon Technologies IRF2804S-7P.pdf Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRLPBF IRF2804STRLPBF Infineon Technologies irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.03 EUR
10+4.59 EUR
50+3.55 EUR
100+3.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF2805STRLPBF IRF2805STRLPBF Infineon Technologies irf2805spbf.pdf?fileId=5546d462533600a4015355de9aad18ed Description: MOSFET N-CH 55V 135A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807ZSTRLPBF IRF2807ZSTRLPBF Infineon Technologies irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9 Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3805STRL-7PP IRF3805STRL-7PP Infineon Technologies IRSDS18836-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3808STRLPBF IRF3808STRLPBF Infineon Technologies irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.39 EUR
10+4.84 EUR
50+3.75 EUR
100+3.39 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905STRLPBF IRF4905STRLPBF Infineon Technologies irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 description Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 14633 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.56 EUR
10+4.96 EUR
50+3.84 EUR
100+3.47 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRLPBF IRF5210STRLPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
auf Bestellung 6468 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.57 EUR
10+3.61 EUR
50+2.76 EUR
100+2.49 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5801TRPBF IRF5801TRPBF Infineon Technologies irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac Description: MOSFET N-CH 200V 600MA MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5348 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.38 EUR
25+0.86 EUR
50+0.63 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5802TRPBF IRF5802TRPBF Infineon Technologies irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2 Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
auf Bestellung 9134 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.38 EUR
25+0.84 EUR
50+0.62 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5803TRPBF IRF5803TRPBF Infineon Technologies irf5803pbf.pdf?fileId=5546d462533600a4015355e3e4e019b6 Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6215STRLPBF IRF6215STRLPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6217TRPBF IRF6217TRPBF Infineon Technologies irf6217pbf.pdf?fileId=5546d462533600a4015355e472de19db Description: MOSFET P-CH 150V 700MA 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7240TRPBF IRF7240TRPBF Infineon Technologies irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2 Description: MOSFET P-CH 40V 10.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7380TRPBF IRF7380TRPBF Infineon Technologies irf7380pbf.pdf?fileId=5546d462533600a4015355f9da901b89 Description: MOSFET 2N-CH 80V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 5890 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.89 EUR
12+1.82 EUR
50+1.37 EUR
100+1.21 EUR
500+0.95 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7410TRPBF IRF7410TRPBF Infineon Technologies irf7410pbf.pdf?fileId=5546d462533600a4015355fa75d71bb0 Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7425TRPBF IRF7425TRPBF Infineon Technologies irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc Description: MOSFET P-CH 20V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7467TRPBF IRF7467TRPBF Infineon Technologies IRF7467PBF.pdf Description: MOSFET N-CH 30V 11A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7484TRPBF IRF7484TRPBF Infineon Technologies IRF7484PbF.pdf Description: MOSFET N-CH 40V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7490TRPBF IRF7490TRPBF Infineon Technologies irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38 Description: MOSFET N-CH 100V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 13687 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.59 EUR
13+1.63 EUR
100+1.08 EUR
500+0.84 EUR
1000+0.77 EUR
2000+0.7 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7492TRPBF IRF7492TRPBF Infineon Technologies IRF7492PbF.pdf Description: MOSFET N-CH 200V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7507TRPBF IRF7507TRPBF Infineon Technologies irf7507.pdf Description: MOSFET N/P-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7701TRPBF IRF7701TRPBF Infineon Technologies IRF7701PbF.pdf Description: MOSFET P-CH 12V 10A 8TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7752TRPBF IRF7752TRPBF Infineon Technologies IRF7752PBF.pdf Description: MOSFET 2N-CH 30V 4.6A 8TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7828TRPBF IRF7828TRPBF Infineon Technologies IRF7828PbF.pdf Description: MOSFET N-CH 30V 13.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7853TRPBF IRF7853TRPBF Infineon Technologies irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27 Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
auf Bestellung 6392 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+2.71 EUR
50+2.05 EUR
100+1.83 EUR
500+1.46 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7854TRPBF IRF7854TRPBF Infineon Technologies irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29 Description: MOSFET N-CH 80V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
auf Bestellung 14208 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.27 EUR
10+2.74 EUR
100+1.86 EUR
500+1.48 EUR
1000+1.36 EUR
2000+1.29 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7855TRPBF IRF7855TRPBF Infineon Technologies irf7855pbf.pdf?fileId=5546d462533600a40153560c60181d2b Description: MOSFET N-CH 60V 12A 8SO
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
auf Bestellung 6926 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.66 EUR
10+3 EUR
50+2.28 EUR
100+2.05 EUR
500+1.64 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7904TRPBF IRF7904TRPBF Infineon Technologies irf7904pbf.pdf?fileId=5546d462533600a40153560c7f8c1d33 Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7907TRPBF IRF7907TRPBF Infineon Technologies irf7907pbf.pdf?fileId=5546d462533600a40153560c992e1d39 Description: MOSFET 2N-CH 30V 9.1A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 12257 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.53 EUR
14+1.58 EUR
50+1.18 EUR
100+1.05 EUR
500+0.82 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1504WH6327XTSA1 Infineon-BAT15-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638961e2b4e86
BAT1504WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 44698 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-6 E6327 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6327
Hersteller: Infineon Technologies
Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 24306 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
BFP450H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 24GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 40539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
31+0.69 EUR
35+0.62 EUR
100+0.54 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.45 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP640H6327XTSA1 Infineon-BFP640-DS-v03_00-EN.pdf?fileId=5546d462689a790c01690f03a9ca3928
BFP640H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 3293 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
30+0.7 EUR
34+0.63 EUR
100+0.55 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.46 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP650H6327XTSA1 Infineon-BFP650-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03d00e3930
BFP650H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 16173 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
31+0.69 EUR
35+0.62 EUR
100+0.54 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.45 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT2402LSE6327XTSA1 Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95
BAT2402LSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 7686 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
15+1.48 EUR
25+1.33 EUR
100+1.18 EUR
250+1.11 EUR
500+1.06 EUR
1000+1.05 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA616H6327XTSA1 BGA616_Rev2011.pdf
BGA616H6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 12342 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
10+2.13 EUR
25+2.01 EUR
100+1.84 EUR
250+1.75 EUR
500+1.68 EUR
1000+1.61 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGB741L7ESDE6327XTSA1 Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7
BGB741L7ESDE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGB707L7ESDE6327XTSA1 Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4
BGB707L7ESDE6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 7501 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
13+1.7 EUR
25+1.59 EUR
100+1.46 EUR
250+1.38 EUR
500+1.33 EUR
1000+1.27 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3S1U-02LRH E6327 esd5v3s1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043243b5f17012475f71c984e73
ESD5V3S1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 11VC TSLP2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-6 E6327 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6327
Hersteller: Infineon Technologies
Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 24306 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP 740FESD E6327 fundamentals-of-power-semiconductors
BFP 740FESD E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 47GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB ~ 31dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Hersteller: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP740H6327XTSA1 Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4
BFP740H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ILD4001E6327HTSA1 ILD4001.pdf
ILD4001E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U02LRHE6327XTSA1 ESD5V3L1U-02LRH.pdf
ESD5V3L1U02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ILD4035E6327HTSA1 ILD4035.pdf
ILD4035E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4120E6327XUMA1 ILD4120.pdf
ILD4120E6327XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4120E6327XUMA1 ILD4120.pdf
ILD4120E6327XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4035E6327HTSA1 ILD4035.pdf
ILD4035E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4001E6327HTSA1 ILD4001.pdf
ILD4001E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U-02LRH E6327 esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078
ESD5V3L1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U-02LRH E6327 esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078
ESD5V3L1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Hersteller: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Hersteller: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP740H6327XTSA1 Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4
BFP740H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3084AMTRPBF IR3084A.pdf
IR3084AMTRPBF
Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.96 EUR
10+4.47 EUR
25+4.31 EUR
100+4.19 EUR
250+4.09 EUR
500+4.06 EUR
1000+4 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3086AMTRPBF IR3086APbF.pdf
IR3086AMTRPBF
Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
10+2.78 EUR
25+2.67 EUR
100+2.53 EUR
250+2.46 EUR
500+2.43 EUR
1000+2.39 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3621MTRPBF IR3621(PbF).pdf
IR3621MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1407STRLPBF infineon-irf1407spbf-ds-en.pdf
IRF1407STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRL7PP IRF2804S-7P.pdf
IRF2804STRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2804STRLPBF irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3
IRF2804STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.03 EUR
10+4.59 EUR
50+3.55 EUR
100+3.21 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF2805STRLPBF irf2805spbf.pdf?fileId=5546d462533600a4015355de9aad18ed
IRF2805STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 135A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF2807ZSTRLPBF irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9
IRF2807ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3805STRL-7PP IRSDS18836-1.pdf?t.download=true&u=5oefqw
IRF3805STRL-7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3808STRLPBF irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc
IRF3808STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.39 EUR
10+4.84 EUR
50+3.75 EUR
100+3.39 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905STRLPBF description irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
IRF4905STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 14633 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.56 EUR
10+4.96 EUR
50+3.84 EUR
100+3.47 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5210STRLPBF irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
auf Bestellung 6468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.57 EUR
10+3.61 EUR
50+2.76 EUR
100+2.49 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5801TRPBF irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac
IRF5801TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 600MA MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5348 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.38 EUR
25+0.86 EUR
50+0.63 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5802TRPBF irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2
IRF5802TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
auf Bestellung 9134 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.38 EUR
25+0.84 EUR
50+0.62 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF5803TRPBF irf5803pbf.pdf?fileId=5546d462533600a4015355e3e4e019b6
IRF5803TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6215STRLPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6217TRPBF irf6217pbf.pdf?fileId=5546d462533600a4015355e472de19db
IRF6217TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 700MA 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7240TRPBF irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2
IRF7240TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 10.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7380TRPBF irf7380pbf.pdf?fileId=5546d462533600a4015355f9da901b89
IRF7380TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 5890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
50+1.37 EUR
100+1.21 EUR
500+0.95 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7410TRPBF irf7410pbf.pdf?fileId=5546d462533600a4015355fa75d71bb0
IRF7410TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7425TRPBF irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc
IRF7425TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7467TRPBF IRF7467PBF.pdf
IRF7467TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7484TRPBF IRF7484PbF.pdf
IRF7484TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7490TRPBF irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38
IRF7490TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 13687 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.63 EUR
100+1.08 EUR
500+0.84 EUR
1000+0.77 EUR
2000+0.7 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7492TRPBF IRF7492PbF.pdf
IRF7492TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7507TRPBF irf7507.pdf
IRF7507TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7701TRPBF IRF7701PbF.pdf
IRF7701TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 10A 8TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7752TRPBF IRF7752PBF.pdf
IRF7752TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.6A 8TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7828TRPBF IRF7828PbF.pdf
IRF7828TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7853TRPBF irf7853pbf.pdf?fileId=5546d462533600a40153560c4d2f1d27
IRF7853TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
auf Bestellung 6392 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.24 EUR
10+2.71 EUR
50+2.05 EUR
100+1.83 EUR
500+1.46 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7854TRPBF irf7854pbf.pdf?fileId=5546d462533600a40153560c559a1d29
IRF7854TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
auf Bestellung 14208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.27 EUR
10+2.74 EUR
100+1.86 EUR
500+1.48 EUR
1000+1.36 EUR
2000+1.29 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7855TRPBF irf7855pbf.pdf?fileId=5546d462533600a40153560c60181d2b
IRF7855TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
auf Bestellung 6926 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.66 EUR
10+3 EUR
50+2.28 EUR
100+2.05 EUR
500+1.64 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7904TRPBF irf7904pbf.pdf?fileId=5546d462533600a40153560c7f8c1d33
IRF7904TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A/11A 8SO
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W, 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7907TRPBF irf7907pbf.pdf?fileId=5546d462533600a40153560c992e1d39
IRF7907TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 9.1A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 12257 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
14+1.58 EUR
50+1.18 EUR
100+1.05 EUR
500+0.82 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 164 165 166 167 168 169 170 171 172 173 174 210 420 630 840 1050 1260 1470 1680 1890 2100 2106  [ Nächste Seite >> ]