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BFR360L3E6765XTMA1 BFR360L3E6765XTMA1 Infineon Technologies bfr360l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef6801142724646906e4 Description: RF TRANS NPN 9V 14GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
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38+0.48 EUR
56+0.32 EUR
63+0.28 EUR
100+0.24 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.2 EUR
2500+0.19 EUR
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BFR340L3E6327XTMA1 BFR340L3E6327XTMA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 9V 14GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17.5dB
Power - Max: 60mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Supplier Device Package: PG-TSLP-3-1
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58+0.3 EUR
66+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
2500+0.18 EUR
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BFP460H6327XTSA1 BFP460H6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5.8V 22GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 Infineon Technologies Infineon-BAT15-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638961e2b4e86 Description: DIODE SCHOTTKY 4V 100MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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23+0.77 EUR
33+0.54 EUR
37+0.49 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
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BGS 12AL7-6 E6327 BGS 12AL7-6 E6327 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC SWITCH RF SPDT TSLP7-6
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BFP450H6327XTSA1 BFP450H6327XTSA1 Infineon Technologies Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Description: RF TRANS NPN 5V 24GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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23+0.79 EUR
32+0.56 EUR
36+0.5 EUR
100+0.44 EUR
250+0.4 EUR
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1000+0.37 EUR
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BFP640H6327XTSA1 BFP640H6327XTSA1 Infineon Technologies Infineon-BFP640-DS-v03_00-EN.pdf?fileId=5546d462689a790c01690f03a9ca3928 Description: RF TRANS NPN 4.5V 40GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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500+0.37 EUR
1000+0.35 EUR
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BFP650H6327XTSA1 BFP650H6327XTSA1 Infineon Technologies Infineon-BFP650-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03d00e3930 Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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1000+0.37 EUR
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BAT2402LSE6327XTSA1 BAT2402LSE6327XTSA1 Infineon Technologies Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95 Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 23255 Stücke:
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15+1.2 EUR
25+1.08 EUR
100+0.96 EUR
250+0.9 EUR
500+0.86 EUR
1000+0.83 EUR
2500+0.8 EUR
5000+0.79 EUR
Mindestbestellmenge: 11
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BGA616H6327XTSA1 BGA616H6327XTSA1 Infineon Technologies BGA616_Rev2011.pdf Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BGA614H6327XTSA1 BGA614H6327XTSA1 Infineon Technologies BGA614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 5759 Stücke:
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8+2.22 EUR
10+1.91 EUR
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BGB741L7ESDE6327XTSA1 BGB741L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7 Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 111106 Stücke:
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12+1.51 EUR
14+1.3 EUR
25+1.23 EUR
100+1.12 EUR
250+1.06 EUR
500+1.02 EUR
1000+0.98 EUR
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BGB707L7ESDE6327XTSA1 BGB707L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4 Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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250+1.06 EUR
500+1.01 EUR
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ESD5V3S1U-02LRH E6327 ESD5V3S1U-02LRH E6327 Infineon Technologies esd5v3s1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043243b5f17012475f71c984e73 Description: TVS DIODE 5.3VWM 11VC TSLP2
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BGS 12AL7-6 E6327 BGS 12AL7-6 E6327 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 24306 Stücke:
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BFP 740FESD E6327 BFP 740FESD E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 4.7V 47GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB ~ 31dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
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BFP740H6327XTSA1 BFP740H6327XTSA1 Infineon Technologies Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4 Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.3 EUR
6000+0.29 EUR
Mindestbestellmenge: 3000
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ILD4001E6327HTSA1 ILD4001E6327HTSA1 Infineon Technologies ILD4001.pdf Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD5V3L1U02LRHE6327XTSA1 ESD5V3L1U02LRHE6327XTSA1 Infineon Technologies ESD5V3L1U-02LRH.pdf Description: TVS DIODE 5.3VWM 10VC PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ILD4035E6327HTSA1 ILD4035E6327HTSA1 Infineon Technologies ILD4035.pdf Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
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ILD4120E6327XUMA1 ILD4120E6327XUMA1 Infineon Technologies ILD4120.pdf Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ILD4120E6327XUMA1 ILD4120E6327XUMA1 Infineon Technologies ILD4120.pdf Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ILD4035E6327HTSA1 ILD4035E6327HTSA1 Infineon Technologies ILD4035.pdf Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
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ILD4001E6327HTSA1 ILD4001E6327HTSA1 Infineon Technologies ILD4001.pdf Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD5V3L1U-02LRH E6327 ESD5V3L1U-02LRH E6327 Infineon Technologies esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078 Description: TVS DIODE 5.3VWM 10VC TSLP2-17
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ESD5V3L1U-02LRH E6327 ESD5V3L1U-02LRH E6327 Infineon Technologies esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078 Description: TVS DIODE 5.3VWM 10VC TSLP2-17
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BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
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BGS 12AL7-4 E6327 BGS 12AL7-4 E6327 Infineon Technologies BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88 Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
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BFP740H6327XTSA1 BFP740H6327XTSA1 Infineon Technologies Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4 Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 7793 Stücke:
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25+0.7 EUR
36+0.49 EUR
41+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
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IR3084AMTRPBF IR3084AMTRPBF Infineon Technologies IR3084A.pdf Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
auf Bestellung 2259 Stücke:
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5+4.17 EUR
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25+3.62 EUR
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500+3.41 EUR
1000+3.36 EUR
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IR3086AMTRPBF IR3086AMTRPBF Infineon Technologies IR3086APbF.pdf Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
auf Bestellung 2770 Stücke:
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100+2.13 EUR
250+2.07 EUR
500+2.04 EUR
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IR3621MTRPBF IR3621MTRPBF Infineon Technologies IR3621(PbF).pdf Description: IC REG CTRLR BUCK 32MLPQ
Produkt ist nicht verfügbar
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IRF1407STRLPBF IRF1407STRLPBF Infineon Technologies infineon-irf1407spbf-ds-en.pdf Description: MOSFET N-CH 75V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 921 Stücke:
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IRF2804STRL7PP IRF2804STRL7PP Infineon Technologies IRF2804S-7P.pdf Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Produkt ist nicht verfügbar
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IRF2804STRLPBF IRF2804STRLPBF Infineon Technologies irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 2296 Stücke:
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4+5.17 EUR
10+3.37 EUR
100+2.35 EUR
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IRF2805STRLPBF IRF2805STRLPBF Infineon Technologies irf2805spbf.pdf?fileId=5546d462533600a4015355de9aad18ed Description: MOSFET N-CH 55V 135A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Produkt ist nicht verfügbar
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IRF2807ZSTRLPBF IRF2807ZSTRLPBF Infineon Technologies irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9 Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3805STRL-7PP IRF3805STRL-7PP Infineon Technologies IRSDS18836-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3808STRLPBF IRF3808STRLPBF Infineon Technologies irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 400 Stücke:
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3+6.07 EUR
10+3.99 EUR
100+2.8 EUR
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IRF4905STRLPBF IRF4905STRLPBF Infineon Technologies irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 description Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 10505 Stücke:
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4+5.26 EUR
10+3.43 EUR
100+2.39 EUR
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IRF5210STRLPBF IRF5210STRLPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
auf Bestellung 5707 Stücke:
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3+6.04 EUR
10+3.96 EUR
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IRF5801TRPBF IRF5801TRPBF Infineon Technologies irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac Description: MOSFET N-CH 200V 600MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
auf Bestellung 1190 Stücke:
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15+1.18 EUR
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IRF5802TRPBF IRF5802TRPBF Infineon Technologies irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2 Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
auf Bestellung 2483 Stücke:
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19+0.97 EUR
30+0.61 EUR
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500+0.29 EUR
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IRF5803TRPBF IRF5803TRPBF Infineon Technologies irf5803pbf.pdf?fileId=5546d462533600a4015355e3e4e019b6 Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
auf Bestellung 7340 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
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IRF5852TRPBF IRF5852TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF6215STRLPBF IRF6215STRLPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6216TRPBF IRF6216TRPBF Infineon Technologies irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7 Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6217TRPBF IRF6217TRPBF Infineon Technologies irf6217pbf.pdf?fileId=5546d462533600a4015355e472de19db Description: MOSFET P-CH 150V 700MA 8SO
Produkt ist nicht verfügbar
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IRF7240TRPBF IRF7240TRPBF Infineon Technologies irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2 Description: MOSFET P-CH 40V 10.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
auf Bestellung 15571 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.76 EUR
11+1.76 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.86 EUR
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IRF7380TRPBF IRF7380TRPBF Infineon Technologies irf7380pbf.pdf?fileId=5546d462533600a4015355f9da901b89 Description: MOSFET 2N-CH 80V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
16+1.15 EUR
100+0.88 EUR
Mindestbestellmenge: 12
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IRF7410TRPBF IRF7410TRPBF Infineon Technologies irf7410pbf.pdf?fileId=5546d462533600a4015355fa75d71bb0 Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
auf Bestellung 6914 Stücke:
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12+1.53 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
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IRF7425TRPBF IRF7425TRPBF Infineon Technologies irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc Description: MOSFET P-CH 20V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
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IRF7467TRPBF IRF7467TRPBF Infineon Technologies IRF7467PBF.pdf Description: MOSFET N-CH 30V 11A 8SO
Produkt ist nicht verfügbar
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IRF7484TRPBF IRF7484TRPBF Infineon Technologies IRF7484PbF.pdf Description: MOSFET N-CH 40V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7490TRPBF IRF7490TRPBF Infineon Technologies irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38 Description: MOSFET N-CH 100V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 15723 Stücke:
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IRF7492TRPBF IRF7492TRPBF Infineon Technologies IRF7492PbF.pdf Description: MOSFET N-CH 200V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7507TRPBF IRF7507TRPBF Infineon Technologies irf7507.pdf Description: MOSFET N/P-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IRF7701TRPBF IRF7701TRPBF Infineon Technologies IRF7701PbF.pdf Description: MOSFET P-CH 12V 10A 8TSSOP
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IRF7705TRPBF IRF7705TRPBF Infineon Technologies IRF7705PBF.pdf Description: MOSFET P-CH 30V 8A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
Produkt ist nicht verfügbar
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BFR360L3E6765XTMA1 bfr360l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef6801142724646906e4
BFR360L3E6765XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
auf Bestellung 11369 Stücke:
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38+0.48 EUR
56+0.32 EUR
63+0.28 EUR
100+0.24 EUR
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1000+0.2 EUR
2500+0.19 EUR
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BFR340L3E6327XTMA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFR340L3E6327XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17.5dB
Power - Max: 60mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Supplier Device Package: PG-TSLP-3-1
auf Bestellung 10910 Stücke:
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Anzahl Preis
40+0.44 EUR
58+0.3 EUR
66+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
2500+0.18 EUR
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BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5.8V 22GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
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BAT1504WH6327XTSA1 Infineon-BAT15-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638961e2b4e86
BAT1504WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 9739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
33+0.54 EUR
37+0.49 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
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BGS 12AL7-6 E6327 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6327
Hersteller: Infineon Technologies
Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 24306 Stücke:
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BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
BFP450H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 24GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 14422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
32+0.56 EUR
36+0.5 EUR
100+0.44 EUR
250+0.4 EUR
500+0.39 EUR
1000+0.37 EUR
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BFP640H6327XTSA1 Infineon-BFP640-DS-v03_00-EN.pdf?fileId=5546d462689a790c01690f03a9ca3928
BFP640H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 23525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
37+0.48 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.35 EUR
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BFP650H6327XTSA1 Infineon-BFP650-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03d00e3930
BFP650H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 145037 Stücke:
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23+0.77 EUR
32+0.55 EUR
36+0.49 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.37 EUR
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BAT2402LSE6327XTSA1 Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95
BAT2402LSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 23255 Stücke:
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Anzahl Preis
11+1.65 EUR
15+1.2 EUR
25+1.08 EUR
100+0.96 EUR
250+0.9 EUR
500+0.86 EUR
1000+0.83 EUR
2500+0.8 EUR
5000+0.79 EUR
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BGA616H6327XTSA1 BGA616_Rev2011.pdf
BGA616H6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 9538 Stücke:
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Anzahl Preis
9+2.01 EUR
11+1.72 EUR
25+1.62 EUR
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BGA614H6327XTSA1 BGA614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a
BGA614H6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 5759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
10+1.91 EUR
25+1.8 EUR
100+1.65 EUR
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BGB741L7ESDE6327XTSA1 Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7
BGB741L7ESDE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 111106 Stücke:
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Anzahl Preis
12+1.51 EUR
14+1.3 EUR
25+1.23 EUR
100+1.12 EUR
250+1.06 EUR
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1000+0.98 EUR
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BGB707L7ESDE6327XTSA1 Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4
BGB707L7ESDE6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 6879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
14+1.29 EUR
25+1.22 EUR
100+1.12 EUR
250+1.06 EUR
500+1.01 EUR
1000+0.97 EUR
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ESD5V3S1U-02LRH E6327 esd5v3s1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043243b5f17012475f71c984e73
ESD5V3S1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 11VC TSLP2
Produkt ist nicht verfügbar
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BGS 12AL7-6 E6327 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6327
Hersteller: Infineon Technologies
Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 24306 Stücke:
Lieferzeit 10-14 Tag (e)
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BFP 740FESD E6327 fundamentals-of-power-semiconductors
BFP 740FESD E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 47GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB ~ 31dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Hersteller: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
Produkt ist nicht verfügbar
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BFP740H6327XTSA1 Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4
BFP740H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
6000+0.29 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ILD4001E6327HTSA1 ILD4001.pdf
ILD4001E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD5V3L1U02LRHE6327XTSA1 ESD5V3L1U-02LRH.pdf
ESD5V3L1U02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ILD4035E6327HTSA1 ILD4035.pdf
ILD4035E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
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ILD4120E6327XUMA1 ILD4120.pdf
ILD4120E6327XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ILD4120E6327XUMA1 ILD4120.pdf
ILD4120E6327XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
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ILD4035E6327HTSA1 ILD4035.pdf
ILD4035E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 350MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 120kHz
Type: DC DC Regulator
Applications: Lighting
Current - Output / Channel: 350mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ILD4001E6327HTSA1 ILD4001.pdf
ILD4001E6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SC-74
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U-02LRH E6327 esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078
ESD5V3L1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD5V3L1U-02LRH E6327 esd5v3l1u-02lrh.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd8012895a71c230078
ESD5V3L1U-02LRH E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 10VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Hersteller: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
Lieferzeit 10-14 Tag (e)
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BGS 12AL7-4 E6327 BGS12AL7-4.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431b3e89eb011b458d7a767d88
BGS 12AL7-4 E6327
Hersteller: Infineon Technologies
Description: IC SW SPDT 30MHZ - 3GHZ TSLP7-4
auf Bestellung 6656 Stücke:
Lieferzeit 10-14 Tag (e)
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BFP740H6327XTSA1 Infineon-BFP740-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389680a24ea4
BFP740H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 7793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
36+0.49 EUR
41+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 25
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IR3084AMTRPBF IR3084A.pdf
IR3084AMTRPBF
Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 9.5V ~ 16V
Applications: Processor
Current - Supply: 14mA
Supplier Device Package: 28-MLPQ (5x5)
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.76 EUR
25+3.62 EUR
100+3.52 EUR
250+3.44 EUR
500+3.41 EUR
1000+3.36 EUR
Mindestbestellmenge: 5
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IR3086AMTRPBF IR3086APbF.pdf
IR3086AMTRPBF
Hersteller: Infineon Technologies
Description: IC CTLR XPHASE 28-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.34 EUR
25+2.24 EUR
100+2.13 EUR
250+2.07 EUR
500+2.04 EUR
1000+2.01 EUR
Mindestbestellmenge: 7
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IR3621MTRPBF IR3621(PbF).pdf
IR3621MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Produkt ist nicht verfügbar
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IRF1407STRLPBF infineon-irf1407spbf-ds-en.pdf
IRF1407STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.24 EUR
10+2.74 EUR
100+1.88 EUR
Mindestbestellmenge: 5
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IRF2804STRL7PP IRF2804S-7P.pdf
IRF2804STRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 25 V
Produkt ist nicht verfügbar
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IRF2804STRLPBF irf2804pbf.pdf?fileId=5546d462533600a4015355de76f818e3
IRF2804STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.37 EUR
100+2.35 EUR
Mindestbestellmenge: 4
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IRF2805STRLPBF irf2805spbf.pdf?fileId=5546d462533600a4015355de9aad18ed
IRF2805STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 135A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Produkt ist nicht verfügbar
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IRF2807ZSTRLPBF irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9
IRF2807ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3805STRL-7PP IRSDS18836-1.pdf?t.download=true&u=5oefqw
IRF3805STRL-7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3808STRLPBF irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc
IRF3808STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+3.99 EUR
100+2.8 EUR
Mindestbestellmenge: 3
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IRF4905STRLPBF description irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
IRF4905STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 10505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
10+3.43 EUR
100+2.39 EUR
Mindestbestellmenge: 4
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IRF5210STRLPBF irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
auf Bestellung 5707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+3.96 EUR
100+2.78 EUR
Mindestbestellmenge: 3
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IRF5801TRPBF irf5801pbf.pdf?fileId=5546d462533600a4015355e3be0919ac
IRF5801TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 600MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 360mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 15
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IRF5802TRPBF irf5802pbf.pdf?fileId=5546d462533600a4015355e3d4d319b2
IRF5802TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
auf Bestellung 2483 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.61 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 19
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IRF5803TRPBF irf5803pbf.pdf?fileId=5546d462533600a4015355e3e4e019b6
IRF5803TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
auf Bestellung 7340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 16
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IRF5852TRPBF IR_PartNumberingSystem.pdf
IRF5852TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF6215STRLPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6216TRPBF irf6216pbf.pdf?fileId=5546d462533600a4015355e4623c19d7
IRF6216TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 2.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6217TRPBF irf6217pbf.pdf?fileId=5546d462533600a4015355e472de19db
IRF6217TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 700MA 8SO
Produkt ist nicht verfügbar
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IRF7240TRPBF irf7240pbf.pdf?fileId=5546d462533600a4015355f19e0d1af2
IRF7240TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 10.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9250 pF @ 25 V
auf Bestellung 15571 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
11+1.76 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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IRF7380TRPBF irf7380pbf.pdf?fileId=5546d462533600a4015355f9da901b89
IRF7380TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
16+1.15 EUR
100+0.88 EUR
Mindestbestellmenge: 12
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IRF7410TRPBF irf7410pbf.pdf?fileId=5546d462533600a4015355fa75d71bb0
IRF7410TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
auf Bestellung 6914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
12+1.53 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.71 EUR
Mindestbestellmenge: 8
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IRF7425TRPBF irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc
IRF7425TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
auf Bestellung 3133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
11+1.62 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
2000+0.77 EUR
Mindestbestellmenge: 7
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IRF7467TRPBF IRF7467PBF.pdf
IRF7467TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Produkt ist nicht verfügbar
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IRF7484TRPBF IRF7484PbF.pdf
IRF7484TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7490TRPBF irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38
IRF7490TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
auf Bestellung 15723 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 9
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IRF7492TRPBF IRF7492PbF.pdf
IRF7492TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7507TRPBF irf7507.pdf
IRF7507TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 2.4A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: Micro8™
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IRF7701TRPBF IRF7701PbF.pdf
IRF7701TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 10A 8TSSOP
Produkt ist nicht verfügbar
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IRF7705TRPBF IRF7705PBF.pdf
IRF7705TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
Produkt ist nicht verfügbar
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