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BGA 748N16 E6327 BGA 748N16 E6327 Infineon Technologies BGA748N16.pdf Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Gain: 16.8dB
Voltage - Supply: 2.6V ~ 3V
RF Type: UMTS
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
Mounting Type: Surface Mount
Package / Case: 16-XFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: TSNP-16-1
Test Frequency: 2.14GHz
P1dB: 1dBm
Noise Figure: 1.4dB
Current - Supply: 5.3mA
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BGF117E6328XTSA1 BGF117E6328XTSA1 Infineon Technologies BGF117.pdf Description: IC FILTER HSMMC ESD PROT 16WLP
DigiKey Programmable: Not Verified
Supplier Device Package: WLP-16-4
Applications: HSMMC (High Speed Multi Media Card)
Type: Filter, HSMMC with ESD Protection
Mounting Type: Surface Mount
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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BGF121E6329XTSA1 BGF121E6329XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: TVS DIODE 10VWM 20VC WLP-4-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 20V
Voltage - Breakdown (Min): 16V
Unidirectional Channels: 1
Supplier Device Package: WLP-4-1
Voltage - Reverse Standoff (Typ): 10V (Max)
Applications: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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BSD314SPEL6327HTSA1 BSD314SPEL6327HTSA1 Infineon Technologies BSD314SPE.pdf Description: MOSFET P-CH 30V 1.5A SOT363
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BTF500601TEAAUMA1 BTF500601TEAAUMA1 Infineon Technologies Infineon-BTF50060-1TEA-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a84bccc2c7553 Description: IC PWR SWITCH P-CHAN 1:1 TO252-5
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-5-11
Ratio - Input:Output: 1:1
Current - Output (Max): 16.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 19V
Input Type: Non-Inverting
Rds On (Typ): 6.8mOhm
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BTS50060-1TEA BTS50060-1TEA Infineon Technologies BTS50060-1TEA_Rev.1.2_Sept2011.pdf Description: IC PWR SWITCH P-CHAN 1:1 TO252-5
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Features: Auto Restart
Packaging: Tape & Reel (TR)
Fault Protection: Over Temperature
Supplier Device Package: PG-TO252-5-3
Ratio - Input:Output: 1:1
Current - Output (Max): 16.5A
Voltage - Load: 6V ~ 19V
Input Type: Non-Inverting
Rds On (Typ): 6.8mOhm
Output Configuration: High Side
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BTS50202EKAXUMA2 BTS50202EKAXUMA2 Infineon Technologies Infineon-BTS5020-2EKA-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a84fd0f4f75c8 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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BTS50302EKAXUMA1 BTS50302EKAXUMA1 Infineon Technologies Infineon-BTS5030-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41a4f9f1125 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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BTS50452EKAXUMA1 BTS50452EKAXUMA1 Infineon Technologies Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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BTS50902EKAXUMA1 BTS50902EKAXUMA1 Infineon Technologies Infineon-BTS5090-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41130771071 Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Input Type: Non-Inverting
Rds On (Typ): 90mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 28V
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BTS51202EKAXUMA1 BTS51202EKAXUMA1 Infineon Technologies Infineon-BTS5120-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41121fc106d Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 120mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BTS51802EKAXUMA1 BTS51802EKAXUMA1 Infineon Technologies Infineon-BTS5180-2EKA-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84f3f43b758f Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 330mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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FS200R07A1E3BOSA1 FS200R07A1E3BOSA1 Infineon Technologies DS_FS200R07A1E3_3_0.PDF?folderId=db3a304412b407950112b4095af601e2&fileId=db3a304325afd6e001261d03d4e36001 Description: IGBT MOD 650V 250A 790W
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 790 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 250 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS400R07A1E3BOSA1 FS400R07A1E3BOSA1 Infineon Technologies DS_FS400R07A1E3_3_0.PDF?folderId=db3a304412b407950112b4095af601e2&fileId=db3a304325afd6e001261d0930996007 Description: IGBT MOD 650V 500A 1250W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 500 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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ICE2QR0665 ICE2QR0665 Infineon Technologies Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 88 W
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ICE2QR1765 ICE2QR1765 Infineon Technologies Datasheet_ICE2QR1765_v21_20100409.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304327b897500127e076c8354321 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 56.4 W
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ICE2QS03HKLA1 ICE2QS03HKLA1 Infineon Technologies Datasheet_ICE2QS03_V20_20091204.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304325305e6d012566b50ebd7070 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
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IDB12E120ATMA1 IDB12E120ATMA1 Infineon Technologies IDB12E120_rev2_2G.pdf?folderId=db3a304412b407950112b43710066741&fileId=db3a304412b407950112b43710876742 Description: DIODE GEN PURP 1.2KV 28A TO263-3
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IDB23E60ATMA1 IDB23E60ATMA1 Infineon Technologies IDB23E60_rev2_2G.pdf?folderId=db3a304412b407950112b438cc146ba1&fileId=db3a304412b407950112b438cc9e6ba2 Description: DIODE STD 600V 41A PGTO26332
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 41A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IDV30E60C IDV30E60C Infineon Technologies IDV30E60C.pdf Description: DIODE GP 600V 21A TO220-2FP
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2 Full Pack
Current - Average Rectified (Io): 21A
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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IFX24401TEV50ATMA1 IFX24401TEV50ATMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC REG LINEAR 5V 300MA TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
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IFX8117MEVHTMA1 IFX8117MEVHTMA1 Infineon Technologies Infineon-IFX8117-DS-v01_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a30432a7fedfc012aad7cf26c0b0d&ack=t Description: IC REG LDO ADJ 1A SOT223-4
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IFX8117MEV33HTMA1 IFX8117MEV33HTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Current, Over Temperature
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IFX8117MEV50HTMA1 IFX8117MEV50HTMA1 Infineon Technologies Description: IC REG LINEAR 5V 1A SOT223-4
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IFX91041EJV50XUMA1 IFX91041EJV50XUMA1 Infineon Technologies Infineon-IFX91041-DS-v01_01-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a304320d39d59012153afb91a0548&ack=t Description: IC REG BUCK 5V 1.8A DSO-8-27
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-8-27
Topology: Buck
Voltage - Input (Max): 45V
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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IPA60R190E6XKSA1 IPA60R190E6XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 20.2A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA60R280E6XKSA1 IPA60R280E6XKSA1 Infineon Technologies IPA60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281f9863f444e6 Description: MOSFET N-CH 600V 13.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IPA60R380E6XKSA1 IPA60R380E6XKSA1 Infineon Technologies Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a Description: MOSFET N-CH 600V 10.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 500 Stücke:
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5+5.05 EUR
10+3.26 EUR
50+2.49 EUR
100+2.24 EUR
500+1.8 EUR
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IPA60R450E6XKSA1 IPA60R450E6XKSA1 Infineon Technologies IPx60R450E6.pdf Description: MOSFET N-CH 600V 9.2A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA60R520E6 IPA60R520E6 Infineon Technologies IPA60R520E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b93a0c71ae6 Description: MOSFET N-CH 600V 8.1A TO220
auf Bestellung 456 Stücke:
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IPA60R750E6XKSA1 IPA60R750E6XKSA1 Infineon Technologies IPA60R750E6_2.0_.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a14dd54012a191d8c272ae2 Description: MOSFET N-CH 600V 5.7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA65R280E6XKSA1 IPA65R280E6XKSA1 Infineon Technologies Infineon-IPI65R280E6-DS-v02_00-en.pdf?fileId=5546d46145f1f3a4014618e6c4f81afe Description: MOSFET N-CH 650V 13.8A TO220-FP
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 158 Stücke:
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10+4.16 EUR
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IPD60R450E6 IPD60R450E6 Infineon Technologies Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30 Description: MOSFET N-CH 600V 9.2A TO252
Produkt ist nicht verfügbar
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IPD60R600E6 IPD60R600E6 Infineon Technologies Infineon-IPD60R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f1f009327039e Description: MOSFET N-CH 600V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 IPD65R380E6BTMA1 Infineon Technologies Infineon-IPD65R380E6-DS-v02_01-en.pdf?fileId=db3a30433efacd9a013f09622c742fd5 Description: MOSFET N-CH 650V 10.6A TO252-3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IPP037N08N3GE8181XKSA1 IPP037N08N3GE8181XKSA1 Infineon Technologies IPP037N08N3_Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae8426111565b Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Produkt ist nicht verfügbar
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IPP062NE7N3GXKSA1 IPP062NE7N3GXKSA1 Infineon Technologies IPP062NE7N3_Rev2+0.pdf?folderId=db3a304327b897500127f1ef299a3be0&fileId=db3a304327b897500127f1efd3323be2 Description: MOSFET N-CH 75V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.8V @ 70µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R380E6XKSA1 IPP60R380E6XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 10.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R450E6XKSA1 IPP60R450E6XKSA1 Infineon Technologies IPP60R450E6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a14dd54012a1973fd1f2b43 Description: MOSFET N-CH 600V 9.2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R520E6XKSA1 IPP60R520E6XKSA1 Infineon Technologies IPP60R520E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281ba841551b3c Description: MOSFET N-CH 600V 8.1A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IPP60R750E6XKSA1 IPP60R750E6XKSA1 Infineon Technologies IPP60R750E6_2.0_.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a14dd54012a193e52402af5 Description: MOSFET N-CH 600V 5.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP65R380E6XKSA1 IPP65R380E6XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 650V 10.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP65R600E6XKSA1 IPP65R600E6XKSA1 Infineon Technologies IPP65R600E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304329a0f6ee0129d16f1b0d0661 Description: MOSFET N-CH 650V 7.3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar
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IPW60R190E6FKSA1 IPW60R190E6FKSA1 Infineon Technologies IPW60R190E6FKSA1.pdf Description: MOSFET N-CH 600V 20.2A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 88 Stücke:
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3+8.51 EUR
30+4.72 EUR
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IPW60R280E6FKSA1 IPW60R280E6FKSA1 Infineon Technologies IPW60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281fb7b4f54507 Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPW65R280E6FKSA1 IPW65R280E6FKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 650V 13.8A TO247-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Produkt ist nicht verfügbar
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KP229E2701XTMA1 KP229E2701XTMA1 Infineon Technologies KP229E2701_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6bce0290b5d Description: SENSOR 43.51PSIA 4.65V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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KP229E3518XTMA1 KP229E3518XTMA1 Infineon Technologies KP229E3518_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432c59a87e012c5a5ff4a10006 Description: SENSOR 58.02PSIA 4.5V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 58.02PSI (50kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.87PSI (±6kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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1500+4.34 EUR
Mindestbestellmenge: 1500 Stücke
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PTFA041501EV4XWSA1 PTFA041501EV4XWSA1 Infineon Technologies PTFA041501E,F.pdf Description: FET RF LDMOS 150W H36248-2
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 Mindestbestellmenge: 50 Stücke
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PTFA070601EV4XWSA1 PTFA070601EV4XWSA1 Infineon Technologies PTFA070601E,F.pdf Description: FET RF LDMOS 60W H36265-2
Packaging: Tray
Package / Case: H-36265-2
Mounting Type: Surface Mount
Frequency: 760MHz
Power - Output: 60W
Gain: 19.5dB
Technology: LDMOS
Supplier Device Package: H-36265-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 600 mA
Produkt ist nicht verfügbar
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PTFA070601EV4R250XTMA1 PTFA070601EV4R250XTMA1 Infineon Technologies PTFA070601E,F.pdf Description: FET RF LDMOS 60W H36265-2
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: H-36265-2
Technology: LDMOS
Gain: 19.5dB
Power - Output: 60W
Frequency: 760MHz
Mounting Type: Surface Mount
Package / Case: H-36265-2
Packaging: Tape & Reel (TR)
Current - Test: 600 mA
Produkt ist nicht verfügbar
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PTFA071701EV4XWSA1 PTFA071701EV4XWSA1 Infineon Technologies ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d Description: FET RF LDMOS 170W H36248-2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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PTFA071701EV4R250XTMA1 PTFA071701EV4R250XTMA1 Infineon Technologies ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d Description: FET RF LDMOS 170W H36248-2
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PTFA072401ELV4XWSA1 PTFA072401ELV4XWSA1 Infineon Technologies PTFA072401EL,FL.pdf Description: FET RF LDMOS 240W H33288-2
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PTFA072401ELV4R250XTMA1 PTFA072401ELV4R250XTMA1 Infineon Technologies PTFA072401EL,FL.pdf Description: FET RF LDMOS 240W H33288-2
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PTFA092211ELV4XWSA1 PTFA092211ELV4XWSA1 Infineon Technologies PTFA092211xL.pdf Description: RF MOSFET LDMOS 30V H-33288-2
Current - Test: 1.75 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Supplier Device Package: H-33288-2
Technology: LDMOS
Gain: 18dB
Power - Output: 220W
Frequency: 940MHz
Mounting Type: Chassis Mount
Package / Case: H-33288-2
Packaging: Tape & Reel (TR)
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PTFA092211ELV4R250XTMA1 PTFA092211ELV4R250XTMA1 Infineon Technologies PTFA092211xL.pdf Description: RF MOSFET LDMOS 30V H-33288-2
Current - Test: 1.75 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Supplier Device Package: H-33288-2
Technology: LDMOS
Gain: 18dB
Power - Output: 220W
Frequency: 940MHz
Mounting Type: Chassis Mount
Package / Case: H-33288-2
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTFA211801EV5XWSA1 PTFA211801EV5XWSA1 Infineon Technologies PTFA211801E.pdf Description: FET RF 65V 2.14GHZ H36260-2
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PTFB191501EV1XWSA1 PTFB191501EV1XWSA1 Infineon Technologies PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f Description: FET RF LDMOS 150W H36248-2
Produkt ist nicht verfügbar
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PTFB191501EV1R250XTMA1 PTFB191501EV1R250XTMA1 Infineon Technologies PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f Description: FET RF LDMOS 150W H36248-2
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BGA 748N16 E6327 BGA748N16.pdf
BGA 748N16 E6327
Hersteller: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Gain: 16.8dB
Voltage - Supply: 2.6V ~ 3V
RF Type: UMTS
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
Mounting Type: Surface Mount
Package / Case: 16-XFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: TSNP-16-1
Test Frequency: 2.14GHz
P1dB: 1dBm
Noise Figure: 1.4dB
Current - Supply: 5.3mA
Produkt ist nicht verfügbar
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BGF117E6328XTSA1 BGF117.pdf
BGF117E6328XTSA1
Hersteller: Infineon Technologies
Description: IC FILTER HSMMC ESD PROT 16WLP
DigiKey Programmable: Not Verified
Supplier Device Package: WLP-16-4
Applications: HSMMC (High Speed Multi Media Card)
Type: Filter, HSMMC with ESD Protection
Mounting Type: Surface Mount
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGF121E6329XTSA1 Part_Number_Guide_Web.pdf
BGF121E6329XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 10VWM 20VC WLP-4-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 20V
Voltage - Breakdown (Min): 16V
Unidirectional Channels: 1
Supplier Device Package: WLP-4-1
Voltage - Reverse Standoff (Typ): 10V (Max)
Applications: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSD314SPEL6327HTSA1 BSD314SPE.pdf
BSD314SPEL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT363
Produkt ist nicht verfügbar
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BTF500601TEAAUMA1 Infineon-BTF50060-1TEA-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a84bccc2c7553
BTF500601TEAAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH P-CHAN 1:1 TO252-5
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-5-11
Ratio - Input:Output: 1:1
Current - Output (Max): 16.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 19V
Input Type: Non-Inverting
Rds On (Typ): 6.8mOhm
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AnzahlPrivatkunde
2500+5.14 EUR
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BTS50060-1TEA BTS50060-1TEA_Rev.1.2_Sept2011.pdf
BTS50060-1TEA
Hersteller: Infineon Technologies
Description: IC PWR SWITCH P-CHAN 1:1 TO252-5
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Features: Auto Restart
Packaging: Tape & Reel (TR)
Fault Protection: Over Temperature
Supplier Device Package: PG-TO252-5-3
Ratio - Input:Output: 1:1
Current - Output (Max): 16.5A
Voltage - Load: 6V ~ 19V
Input Type: Non-Inverting
Rds On (Typ): 6.8mOhm
Output Configuration: High Side
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BTS50202EKAXUMA2 Infineon-BTS5020-2EKA-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a84fd0f4f75c8
BTS50202EKAXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
2500+3.15 EUR
5000+3.09 EUR
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BTS50302EKAXUMA1 Infineon-BTS5030-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41a4f9f1125
BTS50302EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.59 EUR
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BTS50452EKAXUMA1 Infineon-BTS5045-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa4113e5d1075
BTS50452EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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BTS50902EKAXUMA1 Infineon-BTS5090-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41130771071
BTS50902EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Input Type: Non-Inverting
Rds On (Typ): 90mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 28V
Produkt ist nicht verfügbar
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BTS51202EKAXUMA1 Infineon-BTS5120-2EKA-DS-v02_01-EN.pdf?fileId=5546d4625a888733015aa41121fc106d
BTS51202EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 120mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.49 EUR
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BTS51802EKAXUMA1 Infineon-BTS5180-2EKA-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84f3f43b758f
BTS51802EKAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14-40-EP
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 330mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS200R07A1E3BOSA1 DS_FS200R07A1E3_3_0.PDF?folderId=db3a304412b407950112b4095af601e2&fileId=db3a304325afd6e001261d03d4e36001
FS200R07A1E3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 250A 790W
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 790 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 250 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FS400R07A1E3BOSA1 DS_FS400R07A1E3_3_0.PDF?folderId=db3a304412b407950112b4095af601e2&fileId=db3a304325afd6e001261d0930996007
FS400R07A1E3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 500A 1250W
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 500 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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ICE2QR0665 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
ICE2QR0665
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 88 W
Produkt ist nicht verfügbar
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ICE2QR1765 Datasheet_ICE2QR1765_v21_20100409.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304327b897500127e076c8354321
ICE2QR1765
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Power (Watts): 56.4 W
Produkt ist nicht verfügbar
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ICE2QS03HKLA1 Datasheet_ICE2QS03_V20_20091204.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304325305e6d012566b50ebd7070
ICE2QS03HKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IDB12E120ATMA1 IDB12E120_rev2_2G.pdf?folderId=db3a304412b407950112b43710066741&fileId=db3a304412b407950112b43710876742
IDB12E120ATMA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 28A TO263-3
Produkt ist nicht verfügbar
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IDB23E60ATMA1 IDB23E60_rev2_2G.pdf?folderId=db3a304412b407950112b438cc146ba1&fileId=db3a304412b407950112b438cc9e6ba2
IDB23E60ATMA1
Hersteller: Infineon Technologies
Description: DIODE STD 600V 41A PGTO26332
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 41A
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
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IDV30E60C IDV30E60C.pdf
IDV30E60C
Hersteller: Infineon Technologies
Description: DIODE GP 600V 21A TO220-2FP
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2 Full Pack
Current - Average Rectified (Io): 21A
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IFX24401TEV50ATMA1 Part_Number_Guide_Web.pdf
IFX24401TEV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 300MA TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IFX8117MEVHTMA1 Infineon-IFX8117-DS-v01_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a30432a7fedfc012aad7cf26c0b0d&ack=t
IFX8117MEVHTMA1
Hersteller: Infineon Technologies
Description: IC REG LDO ADJ 1A SOT223-4
Produkt ist nicht verfügbar
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IFX8117MEV33HTMA1 fundamentals-of-power-semiconductors
IFX8117MEV33HTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Current, Over Temperature
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IFX8117MEV50HTMA1
IFX8117MEV50HTMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 1A SOT223-4
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IFX91041EJV50XUMA1 Infineon-IFX91041-DS-v01_01-en.pdf?folderId=db3a304314dca3890115039cf70d0bf0&fileId=db3a304320d39d59012153afb91a0548&ack=t
IFX91041EJV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 1.8A DSO-8-27
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-8-27
Topology: Buck
Voltage - Input (Max): 45V
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPA60R190E6XKSA1 fundamentals-of-power-semiconductors
IPA60R190E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA60R280E6XKSA1 IPA60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281f9863f444e6
IPA60R280E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a
IPA60R380E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.05 EUR
10+3.26 EUR
50+2.49 EUR
100+2.24 EUR
500+1.8 EUR
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IPA60R450E6XKSA1 IPx60R450E6.pdf
IPA60R450E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA60R520E6 IPA60R520E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b93a0c71ae6
IPA60R520E6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220
auf Bestellung 456 Stücke:
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IPA60R750E6XKSA1 IPA60R750E6_2.0_.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a14dd54012a191d8c272ae2
IPA60R750E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA65R280E6XKSA1 Infineon-IPI65R280E6-DS-v02_00-en.pdf?fileId=5546d46145f1f3a4014618e6c4f81afe
IPA65R280E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-FP
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.39 EUR
10+4.16 EUR
50+3.2 EUR
100+2.89 EUR
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IPD60R450E6 Infineon--DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a196a77652b30
IPD60R450E6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO252
Produkt ist nicht verfügbar
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IPD60R600E6 Infineon-IPD60R600E6-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433f1b26e8013f1f009327039e
IPD60R600E6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 Infineon-IPD65R380E6-DS-v02_01-en.pdf?fileId=db3a30433efacd9a013f09622c742fd5
IPD65R380E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IPP037N08N3GE8181XKSA1 IPP037N08N3_Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae8426111565b
IPP037N08N3GE8181XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
Produkt ist nicht verfügbar
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IPP062NE7N3GXKSA1 IPP062NE7N3_Rev2+0.pdf?folderId=db3a304327b897500127f1ef299a3be0&fileId=db3a304327b897500127f1efd3323be2
IPP062NE7N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.8V @ 70µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R380E6XKSA1 fundamentals-of-power-semiconductors
IPP60R380E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R450E6XKSA1 IPP60R450E6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a14dd54012a1973fd1f2b43
IPP60R450E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP60R520E6XKSA1 IPP60R520E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281ba841551b3c
IPP60R520E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IPP60R750E6XKSA1 IPP60R750E6_2.0_.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a14dd54012a193e52402af5
IPP60R750E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP65R380E6XKSA1 fundamentals-of-power-semiconductors
IPP65R380E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPP65R600E6XKSA1 IPP65R600E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304329a0f6ee0129d16f1b0d0661
IPP65R600E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar
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IPW60R190E6FKSA1 IPW60R190E6FKSA1.pdf
IPW60R190E6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.51 EUR
30+4.72 EUR
Mindestbestellmenge: 3 Stücke
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IPW60R280E6FKSA1 IPW60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281fb7b4f54507
IPW60R280E6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPW65R280E6FKSA1 fundamentals-of-power-semiconductors
IPW65R280E6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Produkt ist nicht verfügbar
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KP229E2701XTMA1 KP229E2701_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6bce0290b5d
KP229E2701XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 43.51PSIA 4.65V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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KP229E3518XTMA1 KP229E3518_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432c59a87e012c5a5ff4a10006
KP229E3518XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 58.02PSIA 4.5V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 58.02PSI (50kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.87PSI (±6kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+4.34 EUR
Mindestbestellmenge: 1500 Stücke
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PTFA041501EV4XWSA1 PTFA041501E,F.pdf
PTFA041501EV4XWSA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 150W H36248-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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PTFA070601EV4XWSA1 PTFA070601E,F.pdf
PTFA070601EV4XWSA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 60W H36265-2
Packaging: Tray
Package / Case: H-36265-2
Mounting Type: Surface Mount
Frequency: 760MHz
Power - Output: 60W
Gain: 19.5dB
Technology: LDMOS
Supplier Device Package: H-36265-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 600 mA
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PTFA070601EV4R250XTMA1 PTFA070601E,F.pdf
PTFA070601EV4R250XTMA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 60W H36265-2
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: H-36265-2
Technology: LDMOS
Gain: 19.5dB
Power - Output: 60W
Frequency: 760MHz
Mounting Type: Surface Mount
Package / Case: H-36265-2
Packaging: Tape & Reel (TR)
Current - Test: 600 mA
Produkt ist nicht verfügbar
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PTFA071701EV4XWSA1 ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d
PTFA071701EV4XWSA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 170W H36248-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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PTFA071701EV4R250XTMA1 ptfa077101ef-v4_ds_rev03.pdf?folderId=db3a304412b407950112b4095d3b01ef&fileId=db3a304320d39d5901215d514b0e273d
PTFA071701EV4R250XTMA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 170W H36248-2
Produkt ist nicht verfügbar
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PTFA072401ELV4XWSA1 PTFA072401EL,FL.pdf
PTFA072401ELV4XWSA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 240W H33288-2
Produkt ist nicht verfügbar
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PTFA072401ELV4R250XTMA1 PTFA072401EL,FL.pdf
PTFA072401ELV4R250XTMA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 240W H33288-2
Produkt ist nicht verfügbar
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PTFA092211ELV4XWSA1 PTFA092211xL.pdf
PTFA092211ELV4XWSA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-33288-2
Current - Test: 1.75 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Supplier Device Package: H-33288-2
Technology: LDMOS
Gain: 18dB
Power - Output: 220W
Frequency: 940MHz
Mounting Type: Chassis Mount
Package / Case: H-33288-2
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PTFA092211ELV4R250XTMA1 PTFA092211xL.pdf
PTFA092211ELV4R250XTMA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-33288-2
Current - Test: 1.75 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Supplier Device Package: H-33288-2
Technology: LDMOS
Gain: 18dB
Power - Output: 220W
Frequency: 940MHz
Mounting Type: Chassis Mount
Package / Case: H-33288-2
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PTFA211801EV5XWSA1 PTFA211801E.pdf
PTFA211801EV5XWSA1
Hersteller: Infineon Technologies
Description: FET RF 65V 2.14GHZ H36260-2
Produkt ist nicht verfügbar
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PTFB191501EV1XWSA1 PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f
PTFB191501EV1XWSA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 150W H36248-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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PTFB191501EV1R250XTMA1 PTFB191501E-F+V1+Datasheet+Rev02.pdf?folderId=db3a304312fcb1bc01131b00814e17cf&fileId=db3a30432313ff5e0123a472bfdd277f
PTFB191501EV1R250XTMA1
Hersteller: Infineon Technologies
Description: FET RF LDMOS 150W H36248-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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