Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124697) > Seite 551 nach 2079
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S29GL128S90TFA023 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL128S90TFI013 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDH08SG60CXKSA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 8A PGTO2201Current - Reverse Leakage @ Vr: 70 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 240pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 1656 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDH10SG60C | Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO220-2Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-2 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 290pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Bulk Current - Reverse Leakage @ Vr: 90 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IDH10SG60CXKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO220-2Current - Reverse Leakage @ Vr: 90 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-2 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 290pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SGB07N120ATMA1 | Infineon Technologies |
Description: IGBT NPT 1200V 16.5A TO263-3-2Power - Max: 125 W Current - Collector Pulsed (Icm): 27 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 16.5 A Part Status: Last Time Buy Gate Charge: 70 nC Test Condition: 800V, 8A, 47Ohm, 15V Switching Energy: 1mJ Td (on/off) @ 25°C: 27ns/440ns IGBT Type: NPT Supplier Device Package: PG-TO263-3-2 Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9BF164KQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 48QFNDigiKey Programmable: Not Verified Number of I/O: 33 Part Status: Active Supplier Device Package: 48-QFN (7x7) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 8x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| 900546CHOSA1 | Infineon Technologies |
Description: IGBT MODULE Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 900545HOSA1 | Infineon Technologies |
Description: IGBT MODULE Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IPI65R380C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 10.6A TO262-3Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3 Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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AIGW40N65F5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 74A TO247-3-41Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Td (on/off) @ 25°C: 19ns/165ns Switching Energy: 350µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 230 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUTN12S5N018GATMA1 | Infineon Technologies |
Description: MOSFET_(120V 300V)FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 120 V Part Status: Active Supplier Device Package: PG-HSOG-8-1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9BF124LQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 64QFNPackaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 23x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 50 DigiKey Programmable: Not Verified |
auf Bestellung 2598 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9BF124MPMC1-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 80LQFPDigiKey Programmable: Not Verified Number of I/O: 65 Part Status: Active Supplier Device Package: 80-LQFP (14x14) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 26x12b; D/A 2x10b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 72MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11DHIV23 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (9x9) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11FAIV23 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11FAIV13 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11DHB023 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (9x9) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11FAIV20 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11FHB023 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11FHB020 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT11FAIV10 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY62147GN30-45ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP IIDigiKey Programmable: Not Verified Memory Organization: 256K x 16 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Part Status: Active Supplier Device Package: 44-TSOP II Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1350 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB65R110CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R110CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A TO263-3Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 1213 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA65R190CFDXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
auf Bestellung 554 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD65R950CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.9A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 36.7W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD65R950CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.9A TO252-3Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 36.7W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2078 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R310CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 11.4A TO263-3Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 400µA Power Dissipation (Max): 104.2W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB65R310CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 11.4A TO263-3Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 400µA Power Dissipation (Max): 104.2W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 605 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA65R310CFDXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 11.4A TO220Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Vgs(th) (Max) @ Id: 4.5V @ 400µA |
auf Bestellung 531 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD65R660CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A TO252-3-313 Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 63W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD65R660CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 700V 6A TO252-3-313 Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1477 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R190CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB65R190CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
auf Bestellung 573 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC016N06NSSCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-WSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 234A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V |
auf Bestellung 4647 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFM000 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 201 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFB013 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFB013 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064P0XMFB003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 5µs, 3ms Part Status: Active Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S25FL064P0XMFB003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 5µs, 3ms Part Status: Active Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S25FL064LABMFA010 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064P0XMFA003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICMemory Organization: 8M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 5µs, 3ms Part Status: Active Supplier Device Package: 16-SOIC Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064P0XMFA003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICQualification: AEC-Q100 Grade: Automotive Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 5µs, 3ms Part Status: Active Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR |
auf Bestellung 3375 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFM011 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Part Status: Active Supplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tube |
auf Bestellung 1254 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABBHI023 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGADigiKey Programmable: Not Verified Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tape & Reel (TR) Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Part Status: Active Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S25FL064LABBHI023 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGADigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Part Status: Active Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Cut Tape (CT) |
auf Bestellung 2478 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABNFM040 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8USONPackaging: Tray Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 925 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFA011 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 182 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFV011 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICSupplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile DigiKey Programmable: Not Verified Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tube Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Part Status: Active |
auf Bestellung 2084 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFI001 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFI003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S25FL064LABMFI003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1433 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL064LABMFI000 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICMemory Organization: 8M x 8 DigiKey Programmable: Not Verified Memory Interface: SPI - Quad I/O, QPI Part Status: Active Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tray |
auf Bestellung 1161 Stücke: Lieferzeit 10-14 Tag (e) |
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DD700N22KHPSA3 | Infineon Technologies |
Description: DIODE MODULE GP 2.2KV 700AVoltage - DC Reverse (Vr) (Max): 2200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io) (per Diode): 700A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Current - Reverse Leakage @ Vr: 40 mA @ 2200 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C68013A-56LTXIT | Infineon Technologies |
Description: IC MCU USB PHERIPH FX2LP 56VQFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C680xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 56-QFN-EP (8x8) Part Status: Active Number of I/O: 24 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C68013A-56BAXCT | Infineon Technologies |
Description: IC MCU USB PERIPH HS 56VFBGAPackaging: Tape & Reel (TR) Package / Case: 56-VFBGA Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C680xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 56-VFBGA (5x5) Part Status: Active Number of I/O: 24 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLF50281ELXUMA3 | Infineon Technologies |
Description: IC REG BUCK 5V 500MA SSOP-14Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-SSOP-14 Synchronous Rectifier: Yes Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLF50281ELXUMA3 | Infineon Technologies |
Description: IC REG BUCK 5V 500MA SSOP-14Packaging: Cut Tape (CT) Part Status: Active Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-SSOP-14 Synchronous Rectifier: Yes Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 5V |
auf Bestellung 566 Stücke: Lieferzeit 10-14 Tag (e) |
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S6AP413AFBGN1C000 | Infineon Technologies |
Description: IC REG BUCK BST 1.2V QUAD 32QFN Part Status: Obsolete Voltage - Output (Min/Fixed): 1.2V, 1.8V, 3.3V, 1.2V Voltage - Input (Min): 2.5V Synchronous Rectifier: Yes Supplier Device Package: 32-QFN (5x5) Topology: Buck, Buck-Boost Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Output Configuration: Positive Operating Temperature: -30°C ~ 85°C (TA) Current - Output: 2A, 1.2A, 600mA, 2A Function: Step-Down, Step-Up/Step-Down Number of Outputs: 4 Mounting Type: Surface Mount Output Type: Fixed Package / Case: 32-WFQFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S29GL128S90TFA023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S29GL128S90TFI013 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IDH08SG60CXKSA2 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 8A PGTO2201
Current - Reverse Leakage @ Vr: 70 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 600V 8A PGTO2201
Current - Reverse Leakage @ Vr: 70 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 1656 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.06 EUR |
| 50+ | 4.13 EUR |
| 100+ | 4.08 EUR |
| 500+ | 3.94 EUR |
| 1000+ | 3.69 EUR |
| IDH10SG60C |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE SIL CARB 600V 10A TO220-2
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
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| IDH10SG60CXKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 600V 10A TO220-2
Current - Reverse Leakage @ Vr: 90 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 290pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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| SGB07N120ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT NPT 1200V 16.5A TO263-3-2
Power - Max: 125 W
Current - Collector Pulsed (Icm): 27 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 16.5 A
Part Status: Last Time Buy
Gate Charge: 70 nC
Test Condition: 800V, 8A, 47Ohm, 15V
Switching Energy: 1mJ
Td (on/off) @ 25°C: 27ns/440ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT NPT 1200V 16.5A TO263-3-2
Power - Max: 125 W
Current - Collector Pulsed (Icm): 27 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 16.5 A
Part Status: Last Time Buy
Gate Charge: 70 nC
Test Condition: 800V, 8A, 47Ohm, 15V
Switching Energy: 1mJ
Td (on/off) @ 25°C: 27ns/440ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| CY9BF164KQN-G-AVE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 33
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 288KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 33
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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| IPI65R380C6XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO262-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 10.6A TO262-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 50+ | 2.25 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.62 EUR |
| AIGW40N65F5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.96 EUR |
| 30+ | 6.74 EUR |
| 120+ | 5.59 EUR |
| IAUTN12S5N018GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 120 V
Part Status: Active
Supplier Device Package: PG-HSOG-8-1
Description: MOSFET_(120V 300V)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 120 V
Part Status: Active
Supplier Device Package: PG-HSOG-8-1
Produkt ist nicht verfügbar
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| CY9BF124LQN-G-AVE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.95 EUR |
| 10+ | 13.19 EUR |
| 25+ | 12.23 EUR |
| 100+ | 11.21 EUR |
| 260+ | 10.7 EUR |
| 520+ | 10.4 EUR |
| 1040+ | 10.16 EUR |
| CY9BF124MPMC1-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 65
Part Status: Active
Supplier Device Package: 80-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 65
Part Status: Active
Supplier Device Package: 80-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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| S29GL01GT11DHIV23 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| S29GL01GT11FAIV23 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| S29GL01GT11FAIV13 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| S29GL01GT11DHB023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| S29GL01GT11FAIV20 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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| S29GL01GT11FHB023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| S29GL01GT11FHB020 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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| S29GL01GT11FAIV10 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| CY62147GN30-45ZSXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 1350 Stücke
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| IPB65R110CFDATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 31.2A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.7 EUR |
| IPB65R110CFDATMA2 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 650V 31.2A TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.35 EUR |
| 10+ | 8.29 EUR |
| 100+ | 6 EUR |
| 500+ | 5.59 EUR |
| IPA65R190CFDXKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.41 EUR |
| 50+ | 3.76 EUR |
| 100+ | 3.4 EUR |
| 500+ | 2.78 EUR |
| IPD65R950CFDATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 650V 3.9A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IPD65R950CFDATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.9A TO252-3
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 3.9A TO252-3
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 36.7W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2078 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 11+ | 1.96 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.95 EUR |
| IPB65R310CFDATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Description: MOSFET N-CH 650V 11.4A TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IPB65R310CFDATMA2 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO263-3
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 650V 11.4A TO263-3
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 10+ | 3.62 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.11 EUR |
| IPA65R310CFDXKSA2 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Description: MOSFET N-CH 650V 11.4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs(th) (Max) @ Id: 4.5V @ 400µA
auf Bestellung 531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 50+ | 2.52 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.83 EUR |
| IPD65R660CFDATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO252-3-313
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Description: MOSFET N-CH 700V 6A TO252-3-313
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD65R660CFDATMA2 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO252-3-313
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V 6A TO252-3-313
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.97 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.25 EUR |
| IPB65R190CFDATMA2 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| IPB65R190CFDATMA2 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.41 EUR |
| 10+ | 4.86 EUR |
| 100+ | 3.4 EUR |
| 500+ | 2.82 EUR |
| BSC016N06NSSCATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 4647 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.15 EUR |
| 10+ | 5.37 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.2 EUR |
| S25FL064LABMFM000 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 3.67 EUR |
| 25+ | 3.56 EUR |
| 50+ | 3.47 EUR |
| S25FL064LABMFB013 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2100+ | 2.82 EUR |
| S25FL064LABMFB013 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.62 EUR |
| 10+ | 3.38 EUR |
| 25+ | 3.28 EUR |
| 50+ | 3.21 EUR |
| 100+ | 3.14 EUR |
| 250+ | 3.05 EUR |
| 500+ | 2.96 EUR |
| 1000+ | 2.89 EUR |
| S25FL064P0XMFB003 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL064P0XMFB003 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL064LABMFA010 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 3.2 EUR |
| S25FL064P0XMFA003 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1450+ | 5.47 EUR |
| 2900+ | 5.33 EUR |
| S25FL064P0XMFA003 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
auf Bestellung 3375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.97 EUR |
| 10+ | 6.51 EUR |
| 25+ | 6.32 EUR |
| 50+ | 6.16 EUR |
| 100+ | 6.02 EUR |
| 250+ | 5.83 EUR |
| 500+ | 5.69 EUR |
| S25FL064LABMFM011 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
auf Bestellung 1254 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.3 EUR |
| 10+ | 4.94 EUR |
| 25+ | 4.8 EUR |
| 91+ | 4.58 EUR |
| 182+ | 4.47 EUR |
| 273+ | 4.41 EUR |
| 546+ | 4.31 EUR |
| 1001+ | 4.21 EUR |
| S25FL064LABBHI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FL064LABBHI023 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Cut Tape (CT)
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Cut Tape (CT)
auf Bestellung 2478 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.15 EUR |
| 10+ | 4.63 EUR |
| 25+ | 4.56 EUR |
| 50+ | 4.55 EUR |
| 100+ | 4.06 EUR |
| 250+ | 3.93 EUR |
| 500+ | 3.92 EUR |
| 1000+ | 3.64 EUR |
| S25FL064LABNFM040 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (4x4)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (4x4)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 10+ | 3.11 EUR |
| 25+ | 3.02 EUR |
| 50+ | 2.95 EUR |
| 100+ | 2.88 EUR |
| 490+ | 2.73 EUR |
| S25FL064LABMFA011 |
![]() |
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 3.2 EUR |
| 25+ | 3.12 EUR |
| 91+ | 2.99 EUR |
| 182+ | 2.92 EUR |
| S25FL064LABMFV011 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
DigiKey Programmable: Not Verified
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
DigiKey Programmable: Not Verified
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
auf Bestellung 2084 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 10+ | 2.3 EUR |
| 25+ | 2.23 EUR |
| 91+ | 2.14 EUR |
| 182+ | 2.08 EUR |
| 273+ | 2.06 EUR |
| 546+ | 2.01 EUR |
| 1001+ | 1.96 EUR |
| S25FL064LABMFI001 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 10+ | 2.82 EUR |
| 47+ | 2.69 EUR |
| 94+ | 2.63 EUR |
| S25FL064LABMFI003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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| S25FL064LABMFI003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 10+ | 2.78 EUR |
| 25+ | 2.71 EUR |
| 50+ | 2.65 EUR |
| 100+ | 2.59 EUR |
| 250+ | 2.51 EUR |
| 500+ | 2.45 EUR |
| S25FL064LABMFI000 |
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Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
auf Bestellung 1161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 25+ | 2.11 EUR |
| 50+ | 2.07 EUR |
| 240+ | 1.96 EUR |
| 480+ | 1.92 EUR |
| 720+ | 1.88 EUR |
| DD700N22KHPSA3 |
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Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2.2KV 700A
Voltage - DC Reverse (Vr) (Max): 2200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 700A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
Description: DIODE MODULE GP 2.2KV 700A
Voltage - DC Reverse (Vr) (Max): 2200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 700A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 648.76 EUR |
| CY7C68013A-56LTXIT |
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Hersteller: Infineon Technologies
Description: IC MCU USB PHERIPH FX2LP 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-QFN-EP (8x8)
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU USB PHERIPH FX2LP 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-QFN-EP (8x8)
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CY7C68013A-56BAXCT |
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Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HS 56VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU USB PERIPH HS 56VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TLF50281ELXUMA3 |
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Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: Yes
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: Yes
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLF50281ELXUMA3 |
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Hersteller: Infineon Technologies
Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: Yes
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Description: IC REG BUCK 5V 500MA SSOP-14
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14
Synchronous Rectifier: Yes
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.44 EUR |
| 10+ | 3.28 EUR |
| 25+ | 3 EUR |
| 100+ | 2.69 EUR |
| 250+ | 2.53 EUR |
| 500+ | 2.46 EUR |
| S6AP413AFBGN1C000 |
Hersteller: Infineon Technologies
Description: IC REG BUCK BST 1.2V QUAD 32QFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.2V, 1.8V, 3.3V, 1.2V
Voltage - Input (Min): 2.5V
Synchronous Rectifier: Yes
Supplier Device Package: 32-QFN (5x5)
Topology: Buck, Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Current - Output: 2A, 1.2A, 600mA, 2A
Function: Step-Down, Step-Up/Step-Down
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 32-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG BUCK BST 1.2V QUAD 32QFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.2V, 1.8V, 3.3V, 1.2V
Voltage - Input (Min): 2.5V
Synchronous Rectifier: Yes
Supplier Device Package: 32-QFN (5x5)
Topology: Buck, Buck-Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Current - Output: 2A, 1.2A, 600mA, 2A
Function: Step-Down, Step-Up/Step-Down
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 32-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
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