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ISC16DP15LMATMA1 ISC16DP15LMATMA1 Infineon Technologies Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISC16DP15LMATMA1 ISC16DP15LMATMA1 Infineon Technologies Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
auf Bestellung 1018 Stücke:
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4+4.82 EUR
10+2.33 EUR
100+1.99 EUR
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SPA11N80C3 E8209 SPA11N80C3 E8209 Infineon Technologies Infineon-SPA11N80C3-DS-v02_93-EN.pdf?fileId=db3a3043163797a60116385b2fcc00ec Description: 800V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Produkt ist nicht verfügbar
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D2450N02TXPSA1 D2450N02TXPSA1 Infineon Technologies Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d Description: DIODE GEN PURP 200V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 200 V
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CY7C1320CV18-250BZXC CY7C1320CV18-250BZXC Infineon Technologies CY7C1318CV18%2C%20CY7C1320CV18.pdf Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY14B101Q2A-SXIT CY14B101Q2A-SXIT Infineon Technologies Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1512V18-250BZXC CY7C1512V18-250BZXC Infineon Technologies CY7C1510%2C12%2C14%2C25V18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY8C29466-24SXIT CY8C29466-24SXIT Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
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1000+15.07 EUR
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CY3230-28PDIP-AK Infineon Technologies Description: KIT FOOT FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C29466
Accessory Type: Emulator Foot Kit
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NAC1081XTMA1 NAC1081XTMA1 Infineon Technologies Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
Produkt ist nicht verfügbar
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BCP51-16 Infineon Technologies Description: BCSMASIGNBIPOLTRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL530NSPBF IRL530NSPBF Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 description Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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IHW30N110R5XKSA1 IHW30N110R5XKSA1 Infineon Technologies Infineon-IHW30N110R5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018129177f1b20ad Description: IGBT TRENCH 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/350ns
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
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3+7.66 EUR
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120+3.49 EUR
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T2180N18TOFVTXPSA1 T2180N18TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
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CY8C4147AZS-S445T CY8C4147AZS-S445T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
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TLE7184F3VXUMA2 TLE7184F3VXUMA2 Infineon Technologies Infineon-TLE7184F3V-DS-v01_02-EN.pdf?fileId=db3a3043353cc43601353d3eb3c0006f Description: IC MOTOR DRIVER 6V-45V 48VQFN
Packaging: Tape & Reel (TR)
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 45V
Technology: Power MOSFET
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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IPF009N04NF2SATMA1 IPF009N04NF2SATMA1 Infineon Technologies Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-7-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
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IPF009N04NF2SATMA1 IPF009N04NF2SATMA1 Infineon Technologies Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-7-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
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3+6.11 EUR
10+4.3 EUR
100+3.09 EUR
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AUIRF7736M2TR AUIRF7736M2TR Infineon Technologies auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb Description: MOSFET N-CH 40V 22A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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4800+2.66 EUR
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AUIRF7736M2TR AUIRF7736M2TR Infineon Technologies auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb Description: MOSFET N-CH 40V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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10+4.79 EUR
100+3.4 EUR
500+2.8 EUR
1000+2.66 EUR
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AUIRF7739L2TR AUIRF7739L2TR Infineon Technologies auirf7739l2.pdf?fileId=5546d462533600a4015355b0a6551407 Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
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TT215N22KOFHPSA1 TT215N22KOFHPSA1 Infineon Technologies Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c Description: SCR MODULE 2.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 2.2 kV
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TDA16810GXUMA2 TDA16810GXUMA2 Infineon Technologies Description: IC POWERSTAGE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-14
DigiKey Programmable: Not Verified
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TLS850B0TE50BOARDTOBO1 TLS850B0TE50BOARDTOBO1 Infineon Technologies Infineon-Z8F57876664-TLS850B0TxVxx-UserManual-v01_00-EN.pdf?fileId=5546d46261ff577701621ea93cc379be Description: TLS850B0TE50 BOARD
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850B0TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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1+47.38 EUR
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TLS850B0TB33BOARDTOBO1 TLS850B0TB33BOARDTOBO1 Infineon Technologies Infineon-Z8F57876664-TLS850B0TxVxx-UserManual-v01_00-EN.pdf?fileId=5546d46261ff577701621ea93cc379be Description: TLS850B0TB33 BOARD
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850B0TBV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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TLS850B0TE33BOARDTOBO1 TLS850B0TE33BOARDTOBO1 Infineon Technologies Infineon-Z8F57876664-TLS850B0TxVxx-UserManual-v01_00-EN.pdf?fileId=5546d46261ff577701621ea93cc379be Description: TLS850B0TE33 BOARD
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850B0TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
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TLS4125ADJBOARDTOBO1 TLS4125ADJBOARDTOBO1 Infineon Technologies Description: TLS4125 ADJ BOARD
Packaging: Bulk
Voltage - Output: 3V ~ 10V
Voltage - Input: 4V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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CYW89373CUBGT CYW89373CUBGT Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4145AZI-S423T CY8C4145AZI-S423T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IRG7PH50UPBF IRG7PH50UPBF Infineon Technologies irg7ph50upbf.pdf?fileId=5546d462533600a40153564db8e123c3 Description: IGBT 1200V 140A 556W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 290 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 556 W
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 Infineon Technologies Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696 Description: SICFET N-CH 1.2KV 56A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
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IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Infineon Technologies Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
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IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Infineon Technologies Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74 Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
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IMBG65R039M1HXTMA1 IMBG65R039M1HXTMA1 Infineon Technologies Infineon-IMBG65R039M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982bf550d7a Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R039M1HXTMA1 IMBG65R039M1HXTMA1 Infineon Technologies Infineon-IMBG65R039M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982bf550d7a Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
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AIMBG120R080M1XTMA1 AIMBG120R080M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG120R080M1XTMA1 AIMBG120R080M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
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AIMBG120R040M1XTMA1 AIMBG120R040M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
1000+11.57 EUR
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AIMBG120R040M1XTMA1 AIMBG120R040M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
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10+15.77 EUR
100+14.16 EUR
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AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 187A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 187A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
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10+56.75 EUR
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CYBT-483039-02 CYBT-483039-02 Infineon Technologies Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187 Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 34-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 20dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0 +EDR
Current - Receiving: 5.9mA
Current - Transmitting: 5.6mA
Antenna Type: Integrated, Chip
Utilized IC / Part: CYW20719
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBT-483039-02 CYBT-483039-02 Infineon Technologies Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187 Description: RF TXRX MODULE BT CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: 34-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 20dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0 +EDR
Current - Receiving: 5.9mA
Current - Transmitting: 5.6mA
Antenna Type: Integrated, Chip
Utilized IC / Part: CYW20719
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 457 Stücke:
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100+24.78 EUR
250+23.23 EUR
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CYBT-483039-EVAL CYBT-483039-EVAL Infineon Technologies Infineon-CYBT-483039-EVAL_EZ-BT_Module_Arduino_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f00c4c317ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-483039-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: CYBT-483039-02
Produkt ist nicht verfügbar
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IRL8113PBF IRL8113PBF Infineon Technologies IRL8113%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 105A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Produkt ist nicht verfügbar
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IRL3803VPBF IRL3803VPBF Infineon Technologies irl3803vpbf.pdf?fileId=5546d462533600a40153565f92692559 Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Produkt ist nicht verfügbar
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V722680MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a Description: CLAMP DISK DEVICES 58MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 2.677" (68.00mm)
Shape: Square
Type: Mount
Width: 2.677" (68.00mm)
Height: 3.150" (80.00mm)
Produkt ist nicht verfügbar
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CY62157ELL-45ZSXIT CY62157ELL-45ZSXIT Infineon Technologies Infineon-CY62157E_MoBL(R)_8-Mbit_(512_K_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebec06a329a Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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SAF-XC878M-16FFI 3V3 AA SAF-XC878M-16FFI 3V3 AA Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY22150FZXC CY22150FZXC Infineon Technologies download Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
auf Bestellung 1071 Stücke:
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1+19.99 EUR
10+18.37 EUR
96+15.52 EUR
288+14.76 EUR
576+13.8 EUR
1056+12.66 EUR
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TT210N14KOFHPSA1 TT210N14KOFHPSA1 Infineon Technologies TT210N.pdf Description: SCR MODULE 1.4KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.4 kV
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TT210N18KOFHPSA1 TT210N18KOFHPSA1 Infineon Technologies Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd Description: SCR MODULE 1.8KV 410A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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CY90351ESPMC-GS-151E1 CY90351ESPMC-GS-151E1 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY23EP09ZXI-1H CY23EP09ZXI-1H Infineon Technologies download Description: IC FANOUT BUFFER 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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22+23.89 EUR
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CY23EP09ZXI-1H CY23EP09ZXI-1H Infineon Technologies download Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.92 EUR
10+27.9 EUR
25+26.14 EUR
100+24.22 EUR
250+23.3 EUR
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IPC302N08N3X1SA1 Infineon Technologies DS_IPC302N08N3_2_5.pdf?fileId=db3a3043442f820901443f0be1c86428 Description: MOSFET N-CH 80V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar
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BCM88335L2CUBGT BCM88335L2CUBGT Infineon Technologies Infineon-CYW88335_Single_Chip_5G_Wi_Fi_IEEE_802.11ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_4.1_for_Automotive_Applications-AdditionalTechnicalInformation-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ee8678f883639 Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -98dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 498000 Stücke:
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3000+0.073 EUR
6000+0.067 EUR
9000+0.063 EUR
15000+0.062 EUR
Mindestbestellmenge: 3000
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 504449 Stücke:
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53+0.33 EUR
76+0.23 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
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CY8C4128LQI-BL563T CY8C4128LQI-BL563T Infineon Technologies Infineon-PSoC_4_PSoC_4100_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5e6f46dbe Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 8Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 2900 Stücke:
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2+10.08 EUR
10+7.73 EUR
25+7.14 EUR
100+6.5 EUR
250+6.19 EUR
500+6 EUR
1000+5.85 EUR
Mindestbestellmenge: 2
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ISC16DP15LMATMA1 Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5
ISC16DP15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISC16DP15LMATMA1 Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5
ISC16DP15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
auf Bestellung 1018 Stücke:
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4+4.82 EUR
10+2.33 EUR
100+1.99 EUR
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SPA11N80C3 E8209 Infineon-SPA11N80C3-DS-v02_93-EN.pdf?fileId=db3a3043163797a60116385b2fcc00ec
SPA11N80C3 E8209
Hersteller: Infineon Technologies
Description: 800V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Produkt ist nicht verfügbar
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D2450N02TXPSA1 Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d
D2450N02TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 200 V
Produkt ist nicht verfügbar
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CY7C1320CV18-250BZXC CY7C1318CV18%2C%20CY7C1320CV18.pdf
CY7C1320CV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 326 Stücke:
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Anzahl Preis
9+56.61 EUR
Mindestbestellmenge: 9
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CY14B101Q2A-SXIT Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CY14B101Q2A-SXIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1512V18-250BZXC CY7C1510%2C12%2C14%2C25V18.pdf
CY7C1512V18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C29466-24SXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29466-24SXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+15.07 EUR
Mindestbestellmenge: 1000
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CY3230-28PDIP-AK
Hersteller: Infineon Technologies
Description: KIT FOOT FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C29466
Accessory Type: Emulator Foot Kit
Produkt ist nicht verfügbar
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NAC1081XTMA1 Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1081XTMA1
Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
Produkt ist nicht verfügbar
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BCP51-16
Hersteller: Infineon Technologies
Description: BCSMASIGNBIPOLTRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL530NSPBF description irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
IRL530NSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IHW30N110R5XKSA1 Infineon-IHW30N110R5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018129177f1b20ad
IHW30N110R5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/350ns
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
auf Bestellung 167 Stücke:
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Anzahl Preis
3+7.66 EUR
30+4.24 EUR
120+3.49 EUR
Mindestbestellmenge: 3
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T2180N18TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
T2180N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
auf Bestellung 2 Stücke:
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Anzahl Preis
1+854.59 EUR
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CY8C4147AZS-S445T
CY8C4147AZS-S445T
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
Produkt ist nicht verfügbar
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TLE7184F3VXUMA2 Infineon-TLE7184F3V-DS-v01_02-EN.pdf?fileId=db3a3043353cc43601353d3eb3c0006f
TLE7184F3VXUMA2
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 6V-45V 48VQFN
Packaging: Tape & Reel (TR)
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 45V
Technology: Power MOSFET
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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IPF009N04NF2SATMA1 Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd
IPF009N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-7-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Produkt ist nicht verfügbar
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IPF009N04NF2SATMA1 Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd
IPF009N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Supplier Device Package: PG-TO263-7-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.11 EUR
10+4.3 EUR
100+3.09 EUR
Mindestbestellmenge: 3
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AUIRF7736M2TR auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb
AUIRF7736M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4800+2.66 EUR
Mindestbestellmenge: 4800
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AUIRF7736M2TR auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb
AUIRF7736M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.25 EUR
10+4.79 EUR
100+3.4 EUR
500+2.8 EUR
1000+2.66 EUR
Mindestbestellmenge: 3
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AUIRF7739L2TR auirf7739l2.pdf?fileId=5546d462533600a4015355b0a6551407
AUIRF7739L2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Produkt ist nicht verfügbar
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TT215N22KOFHPSA1 Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c
TT215N22KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 2.2 kV
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+276.36 EUR
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TDA16810GXUMA2
TDA16810GXUMA2
Hersteller: Infineon Technologies
Description: IC POWERSTAGE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-14
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLS850B0TE50BOARDTOBO1 Infineon-Z8F57876664-TLS850B0TxVxx-UserManual-v01_00-EN.pdf?fileId=5546d46261ff577701621ea93cc379be
TLS850B0TE50BOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS850B0TE50 BOARD
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850B0TEV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.38 EUR
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TLS850B0TB33BOARDTOBO1 Infineon-Z8F57876664-TLS850B0TxVxx-UserManual-v01_00-EN.pdf?fileId=5546d46261ff577701621ea93cc379be
TLS850B0TB33BOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS850B0TB33 BOARD
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850B0TBV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.38 EUR
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TLS850B0TE33BOARDTOBO1 Infineon-Z8F57876664-TLS850B0TxVxx-UserManual-v01_00-EN.pdf?fileId=5546d46261ff577701621ea93cc379be
TLS850B0TE33BOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS850B0TE33 BOARD
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850B0TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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TLS4125ADJBOARDTOBO1
TLS4125ADJBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4125 ADJ BOARD
Packaging: Bulk
Voltage - Output: 3V ~ 10V
Voltage - Input: 4V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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CYW89373CUBGT
CYW89373CUBGT
Hersteller: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4145AZI-S423T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4145AZI-S423T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG7PH50UPBF irg7ph50upbf.pdf?fileId=5546d462533600a40153564db8e123c3
IRG7PH50UPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 140A 556W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 290 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 556 W
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696
IMZ120R030M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 56A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.45 EUR
30+16.75 EUR
120+15.2 EUR
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IMBG65R022M1HXTMA1 Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74
IMBG65R022M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+11.81 EUR
Mindestbestellmenge: 1000
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IMBG65R022M1HXTMA1 Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74
IMBG65R022M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.69 EUR
10+15.98 EUR
100+14.45 EUR
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IMBG65R039M1HXTMA1 Infineon-IMBG65R039M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982bf550d7a
IMBG65R039M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R039M1HXTMA1 Infineon-IMBG65R039M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e4982bf550d7a
IMBG65R039M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
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AIMBG120R080M1XTMA1 448_AIMBG120R.pdf
AIMBG120R080M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG120R080M1XTMA1 448_AIMBG120R.pdf
AIMBG120R080M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.58 EUR
10+10.73 EUR
100+8.81 EUR
Mindestbestellmenge: 2
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AIMBG120R040M1XTMA1 448_AIMBG120R.pdf
AIMBG120R040M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+11.57 EUR
Mindestbestellmenge: 1000
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AIMBG120R040M1XTMA1 448_AIMBG120R.pdf
AIMBG120R040M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.42 EUR
10+15.77 EUR
100+14.16 EUR
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AIMBG120R010M1XTMA1 448_AIMBG120R.pdf
AIMBG120R010M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 187A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+46.37 EUR
Mindestbestellmenge: 1000
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AIMBG120R010M1XTMA1 448_AIMBG120R.pdf
AIMBG120R010M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 187A
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drain to Source Voltage (Vdss): 1200 V
Qualification: AEC-Q101
auf Bestellung 2715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.14 EUR
10+56.75 EUR
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CYBT-483039-02 Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187
CYBT-483039-02
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 34-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 20dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0 +EDR
Current - Receiving: 5.9mA
Current - Transmitting: 5.6mA
Antenna Type: Integrated, Chip
Utilized IC / Part: CYW20719
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBT-483039-02 Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187
CYBT-483039-02
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: 34-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB SRAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 20dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0 +EDR
Current - Receiving: 5.9mA
Current - Transmitting: 5.6mA
Antenna Type: Integrated, Chip
Utilized IC / Part: CYW20719
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.52 EUR
10+29.43 EUR
25+27.1 EUR
100+24.78 EUR
250+23.23 EUR
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CYBT-483039-EVAL Infineon-CYBT-483039-EVAL_EZ-BT_Module_Arduino_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f00c4c317ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBT-483039-EVAL
Hersteller: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-483039-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: CYBT-483039-02
Produkt ist nicht verfügbar
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IRL8113PBF IRL8113%28S%2CL%29PbF.pdf
IRL8113PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 105A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Produkt ist nicht verfügbar
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IRL3803VPBF irl3803vpbf.pdf?fileId=5546d462533600a40153565f92692559
IRL3803VPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Produkt ist nicht verfügbar
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V722680MHPSA1 Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 2.677" (68.00mm)
Shape: Square
Type: Mount
Width: 2.677" (68.00mm)
Height: 3.150" (80.00mm)
Produkt ist nicht verfügbar
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CY62157ELL-45ZSXIT Infineon-CY62157E_MoBL(R)_8-Mbit_(512_K_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebec06a329a
CY62157ELL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC878M-16FFI 3V3 AA Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAF-XC878M-16FFI 3V3 AA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY22150FZXC download
CY22150FZXC
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
auf Bestellung 1071 Stücke:
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Anzahl Preis
1+19.99 EUR
10+18.37 EUR
96+15.52 EUR
288+14.76 EUR
576+13.8 EUR
1056+12.66 EUR
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TT210N14KOFHPSA1 TT210N.pdf
TT210N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.4 kV
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TT210N18KOFHPSA1 Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd
TT210N18KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 410A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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CY90351ESPMC-GS-151E1
CY90351ESPMC-GS-151E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY23EP09ZXI-1H download
CY23EP09ZXI-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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22+23.89 EUR
Mindestbestellmenge: 22
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CY23EP09ZXI-1H download
CY23EP09ZXI-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 499 Stücke:
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1+34.92 EUR
10+27.9 EUR
25+26.14 EUR
100+24.22 EUR
250+23.3 EUR
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IPC302N08N3X1SA1 DS_IPC302N08N3_2_5.pdf?fileId=db3a3043442f820901443f0be1c86428
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
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BCM88335L2CUBGT Infineon-CYW88335_Single_Chip_5G_Wi_Fi_IEEE_802.11ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_4.1_for_Automotive_Applications-AdditionalTechnicalInformation-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017ee8678f883639
BCM88335L2CUBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -98dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT5404E6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5404E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 498000 Stücke:
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Anzahl Preis
3000+0.073 EUR
6000+0.067 EUR
9000+0.063 EUR
15000+0.062 EUR
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BAT5404E6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5404E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 504449 Stücke:
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Anzahl Preis
53+0.33 EUR
76+0.23 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
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CY8C4128LQI-BL563T Infineon-PSoC_4_PSoC_4100_BLE_Family_Datasheet_Programmable_System-on-Chip-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee5e6f46dbe
CY8C4128LQI-BL563T
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 8Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 2900 Stücke:
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Anzahl Preis
2+10.08 EUR
10+7.73 EUR
25+7.14 EUR
100+6.5 EUR
250+6.19 EUR
500+6 EUR
1000+5.85 EUR
Mindestbestellmenge: 2
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