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AUIRFS8409 AUIRFS8409 International Rectifier IRSDS18596-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFSL3206 AUIRFSL3206 International Rectifier IRSDS11768-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
Qualification: AEC-Q101
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AUIRFSL6535 AUIRFSL6535 International Rectifier INFN-S-A0002296858-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 300V 19A TO262-3-901
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO262-3-901
Vgs(th) (Max) @ Id: 5V @ 150µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
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AUIRFSL8403 AUIRFSL8403 International Rectifier IRSDS18668-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 123A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
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AUIRFSL8407 AUIRFSL8407 International Rectifier IRSDS19245-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Qualification: AEC-Q101
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AUIRFSL8408 AUIRFSL8408 International Rectifier IRSDS18594-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Qualification: AEC-Q101
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AUIRFSL8409 AUIRFSL8409 International Rectifier IRSDS18596-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 195A TO262
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AUIRFU1010Z AUIRFU1010Z International Rectifier IRSDS10354-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 42A TO251-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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AUIRFU4292 AUIRFU4292 International Rectifier auirfr4292.pdf?fileId=5546d462533600a4015355b59f38148b Description: MOSFET_(120V,300V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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AUIRFU8401 AUIRFU8401 International Rectifier IRSDS18587-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 60A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFU8403 AUIRFU8403 International Rectifier IRSDS18588-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
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AUIRFU8403-701TRL AUIRFU8403-701TRL International Rectifier INFN-S-A0008053500-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO251-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
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AUIRFU8405 AUIRFU8405 International Rectifier IRSD-S-A0000108813-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A I-PAK
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 163W (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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AUIRFZ24NSTRL AUIRFZ24NSTRL International Rectifier INFN-S-A0003823199-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ34N AUIRFZ34N International Rectifier IRSDS11400-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFZ44N AUIRFZ44N International Rectifier INFN-S-A0003614934-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44N International Rectifier INFN-S-A0003614934-1.pdf?t.download=true&u=5oefqw AUIRFZ44N.pdf Trans MOSFET N-CH Si 55V 31A Automotive 3-Pin(3+Tab) TO-220AB Tube
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AUIRFZ44NS AUIRFZ44NS International Rectifier INFN-S-A0008053269-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44NSTRL AUIRFZ44NSTRL International Rectifier INFN-S-A0008053269-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44V AUIRFZ44V International Rectifier IRLES00093-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
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AUIRFZ44Z AUIRFZ44Z International Rectifier INFN-S-A0003614921-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 51A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ48N AUIRFZ48N International Rectifier IRSDS13108-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 69A TO220AB
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AUIRFZ48Z AUIRFZ48Z International Rectifier IRSDS11745-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 61A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ48Z International Rectifier IRSDS11745-1.pdf?t.download=true&u=5oefqw auirfz48z.pdf?fileId=5546d462533600a4015355ba11e01510 MOSFET N-CH 55V 61A 91Вт TO-220AB Транзистори
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AUIRFZ48ZSTRL AUIRFZ48ZSTRL International Rectifier auirfz48z.pdf Description: MOSFET N-CH 55V 61A D2PAK
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AUIRG4BC30S-S International Rectifier IRSDS11573-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 34A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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AUIRG4BC30U-S AUIRG4BC30U-S International Rectifier IRSDS11573-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 23A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30USTRL International Rectifier IRSDS11573-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 23A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4PC40S-E-IR International Rectifier Description: IGBT
Packaging: Bulk
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AUIRGF66524D0-IR AUIRGF66524D0-IR International Rectifier IRSD-S-A0000097474-1.pdf?t.download=true&u=5oefqw Description: IGBT
Td (on/off) @ 25°C: 30ns/75ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 176 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 214 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 80 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 915µJ (on), 280µJ (off)
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AUIRGP4066D1-E-IR International Rectifier Description: IGBT, 60A I(C), 600V V(BR)CES, N
Packaging: Bulk
Part Status: Active
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AUIRGP4066D1-IR International Rectifier Description: IGBT TRENCH 600V 140A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.24mJ (on), 2.17mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
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AUIRGP50B60PD1 International Rectifier AUIRGP50B60PD1%28E%29.pdf IGBT; 600V; 33A; 390W; TO247-3 Транзистори
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AUIRGP65A40D0 AUIRGP65A40D0 International Rectifier INFN-S-A0002787686-1.pdf?t.download=true&u=5oefqw Description: IGBT DESCRETE SWITCH
Packaging: Bulk
Part Status: Active
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AUIRGP66524D0-IR AUIRGP66524D0-IR International Rectifier auirgp66524d0.pdf?fileId=5546d462533600a4015355ba7924152b Description: IGBT TRENCH 600V 60A TO-247AC
Power - Max: 214 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 915µJ (on), 280µJ (off)
Td (on/off) @ 25°C: 30ns/75ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 176 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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AUIRGPS4070D0 AUIRGPS4070D0 International Rectifier INFN-S-A0007019043-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 240A TO274-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 750 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 240 A
Part Status: Active
Gate Charge: 250 nC
Test Condition: 400V, 120A, 4.7Ohm, 15V
Switching Energy: 5.7mJ (on), 4.2mJ (off)
Td (on/off) @ 25°C: 40ns/140ns
IGBT Type: Trench
Supplier Device Package: PG-TO274-3-903
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Reverse Recovery Time (trr): 210 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Bulk
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AUIRGPS4070D0 International Rectifier INFN-S-A0007019043-1.pdf?t.download=true&u=5oefqw IGBT Chip N-CH 600V 240A 750000mW Automotive 3-Pin(3+Tab) Super-247 Транзистори
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AUIRGR4045D AUIRGR4045D International Rectifier IRSDS11577-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 12A TO-252AA
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Part Status: Active
Gate Charge: 19.5 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
IGBT Type: Trench
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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AUIRGS30B60K-IR AUIRGS30B60K-IR International Rectifier IRSDS11578-1.pdf?t.download=true&u=5oefqw Description: IGBT, 78A I(C), 600V V(BR)CES, N
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AUIRGSL30B60K-IR International Rectifier IRSDS11578-1.pdf?t.download=true&u=5oefqw Description: IGBT, 78A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
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AUIRGSL4062D1 AUIRGSL4062D1 International Rectifier auirgs4062d1.pdf?fileId=5546d462533600a4015355ba996c1537 Description: IGBT TRENCH 600V 59A TO-262
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AUIRL1404S AUIRL1404S International Rectifier INFN-S-A0002297051-1.pdf?t.download=true&u=5oefqw Description: PFET, 160A I(D), 40V, 0.004OHM,
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404STRL AUIRL1404STRL International Rectifier INFN-S-A0002297051-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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AUIRL1404Z AUIRL1404Z International Rectifier INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRL1404ZS AUIRL1404ZS International Rectifier INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZSTRL AUIRL1404ZSTRL International Rectifier INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRL2203N AUIRL2203N International Rectifier IRSDS19168-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRL3705N AUIRL3705N International Rectifier IRSDS11401-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRL3705Z AUIRL3705Z International Rectifier IRSDS11212-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRL3705ZL AUIRL3705ZL International Rectifier IRSDS11212-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 75A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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161+3.42 EUR
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AUIRL3705ZS AUIRL3705ZS International Rectifier INFN-S-A0002296977-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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AUIRL3705ZSTRL AUIRL3705ZSTRL International Rectifier INFN-S-A0002296977-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRL7732S2TR1 International Rectifier auirl7732s2.pdf Транзистори
Produkt ist nicht verfügbar
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AUIRL7736M2TR AUIRL7736M2TR International Rectifier IRSDS11526-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 179A DIRECTFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5055 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 67A, 10V
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Bulk
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AUIRL7766M2TR AUIRL7766M2TR International Rectifier INFN-S-A0002298803-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 10A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 31A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 25 V
Qualification: AEC-Q101
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AUIRLI2505 International Rectifier auirli2505.pdf Description: MOSFET N CH 55V 58A TO-220AB
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AUIRLL024NTR-IR AUIRLL024NTR-IR International Rectifier INFN-S-A0002298883-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR014N AUIRLR014N International Rectifier info-tauirlr014n.pdf N-MOSFET 55V 10A 140mΩ 28W AUIRLR014N International Rectifier TAUIRLR014N
Anzahl je Verpackung: 25 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.26 EUR
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AUIRLR014NTRL AUIRLR014NTRL International Rectifier INFN-S-A0002297177-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
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AUIRLR024N AUIRLR024N International Rectifier INFN-S-A0002298685-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRFS8409 IRSDS18596-1.pdf?t.download=true&u=5oefqw
AUIRFS8409
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9548 Stücke:
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AUIRFSL3206 IRSDS11768-1.pdf?t.download=true&u=5oefqw
AUIRFSL3206
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
Qualification: AEC-Q101
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AUIRFSL6535 INFN-S-A0002296858-1.pdf?t.download=true&u=5oefqw
AUIRFSL6535
Hersteller: International Rectifier
Description: MOSFET N-CH 300V 19A TO262-3-901
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO262-3-901
Vgs(th) (Max) @ Id: 5V @ 150µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 520 Stücke:
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AnzahlPrivatkunde
170+3.17 EUR
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AUIRFSL8403 IRSDS18668-1.pdf?t.download=true&u=5oefqw
AUIRFSL8403
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 123A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
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AUIRFSL8407 IRSDS19245-1.pdf?t.download=true&u=5oefqw
AUIRFSL8407
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1288 Stücke:
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AUIRFSL8408 IRSDS18594-1.pdf?t.download=true&u=5oefqw
AUIRFSL8408
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Qualification: AEC-Q101
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AUIRFSL8409 IRSDS18596-1.pdf?t.download=true&u=5oefqw
AUIRFSL8409
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 195A TO262
Produkt ist nicht verfügbar
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AUIRFU1010Z IRSDS10354-1.pdf?t.download=true&u=5oefqw
AUIRFU1010Z
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 42A TO251-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 375 Stücke:
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AnzahlPrivatkunde
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AUIRFU4292 auirfr4292.pdf?fileId=5546d462533600a4015355b59f38148b
AUIRFU4292
Hersteller: International Rectifier
Description: MOSFET_(120V,300V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 18000 Stücke:
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AUIRFU8401 IRSDS18587-1.pdf?t.download=true&u=5oefqw
AUIRFU8401
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 100A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 60A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFU8403 IRSDS18588-1.pdf?t.download=true&u=5oefqw
AUIRFU8403
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 100A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
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AUIRFU8403-701TRL INFN-S-A0008053500-1.pdf?t.download=true&u=5oefqw
AUIRFU8403-701TRL
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO251-3-901
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11512 Stücke:
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AnzahlPrivatkunde
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AUIRFU8405 IRSD-S-A0000108813-1.pdf?t.download=true&u=5oefqw
AUIRFU8405
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 100A I-PAK
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 163W (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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AUIRFZ24NSTRL INFN-S-A0003823199-1.pdf?t.download=true&u=5oefqw
AUIRFZ24NSTRL
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 112727 Stücke:
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AUIRFZ34N IRSDS11400-1.pdf?t.download=true&u=5oefqw
AUIRFZ34N
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFZ44N INFN-S-A0003614934-1.pdf?t.download=true&u=5oefqw
AUIRFZ44N
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44N INFN-S-A0003614934-1.pdf?t.download=true&u=5oefqw AUIRFZ44N.pdf
Hersteller: International Rectifier
Trans MOSFET N-CH Si 55V 31A Automotive 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
353+1.87 EUR
500+1.76 EUR
1000+1.63 EUR
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AUIRFZ44NS INFN-S-A0008053269-1.pdf?t.download=true&u=5oefqw
AUIRFZ44NS
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44NSTRL INFN-S-A0008053269-1.pdf?t.download=true&u=5oefqw
AUIRFZ44NSTRL
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44V IRLES00093-1.pdf?t.download=true&u=5oefqw
AUIRFZ44V
Hersteller: International Rectifier
Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
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AUIRFZ44Z INFN-S-A0003614921-1.pdf?t.download=true&u=5oefqw
AUIRFZ44Z
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 51A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
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229+2.4 EUR
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AUIRFZ48N IRSDS13108-1.pdf?t.download=true&u=5oefqw
AUIRFZ48N
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 69A TO220AB
auf Bestellung 25056 Stücke:
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173+3.19 EUR
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AUIRFZ48Z IRSDS11745-1.pdf?t.download=true&u=5oefqw
AUIRFZ48Z
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 61A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Qualification: AEC-Q101
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224+2.4 EUR
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AUIRFZ48Z IRSDS11745-1.pdf?t.download=true&u=5oefqw auirfz48z.pdf?fileId=5546d462533600a4015355ba11e01510
Hersteller: International Rectifier
MOSFET N-CH 55V 61A 91Вт TO-220AB Транзистори
Produkt ist nicht verfügbar
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AUIRFZ48ZSTRL auirfz48z.pdf
AUIRFZ48ZSTRL
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 61A D2PAK
Produkt ist nicht verfügbar
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AUIRG4BC30S-S IRSDS11573-1.pdf?t.download=true&u=5oefqw
Hersteller: International Rectifier
Description: IGBT 600V 34A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
auf Bestellung 700 Stücke:
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160+3.45 EUR
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AUIRG4BC30U-S IRSDS11573-1.pdf?t.download=true&u=5oefqw
AUIRG4BC30U-S
Hersteller: International Rectifier
Description: IGBT 600V 23A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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22+25.04 EUR
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AUIRG4BC30USTRL IRSDS11573-1.pdf?t.download=true&u=5oefqw
AUIRG4BC30USTRL
Hersteller: International Rectifier
Description: IGBT 600V 23A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
auf Bestellung 6390 Stücke:
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AnzahlPrivatkunde
159+3.47 EUR
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AUIRG4PC40S-E-IR
Hersteller: International Rectifier
Description: IGBT
Packaging: Bulk
Produkt ist nicht verfügbar
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AUIRGF66524D0-IR IRSD-S-A0000097474-1.pdf?t.download=true&u=5oefqw
AUIRGF66524D0-IR
Hersteller: International Rectifier
Description: IGBT
Td (on/off) @ 25°C: 30ns/75ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 176 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 214 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 80 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 915µJ (on), 280µJ (off)
auf Bestellung 7082 Stücke:
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69+9.15 EUR
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AUIRGP4066D1-E-IR
Hersteller: International Rectifier
Description: IGBT, 60A I(C), 600V V(BR)CES, N
Packaging: Bulk
Part Status: Active
auf Bestellung 224 Stücke:
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37+16.45 EUR
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AUIRGP4066D1-IR
Hersteller: International Rectifier
Description: IGBT TRENCH 600V 140A TO-247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.24mJ (on), 2.17mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 225 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
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AUIRGP50B60PD1 AUIRGP50B60PD1%28E%29.pdf
Hersteller: International Rectifier
IGBT; 600V; 33A; 390W; TO247-3 Транзистори
Produkt ist nicht verfügbar
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AUIRGP65A40D0 INFN-S-A0002787686-1.pdf?t.download=true&u=5oefqw
AUIRGP65A40D0
Hersteller: International Rectifier
Description: IGBT DESCRETE SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 1600 Stücke:
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51+10.65 EUR
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AUIRGP66524D0-IR auirgp66524d0.pdf?fileId=5546d462533600a4015355ba7924152b
AUIRGP66524D0-IR
Hersteller: International Rectifier
Description: IGBT TRENCH 600V 60A TO-247AC
Power - Max: 214 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 915µJ (on), 280µJ (off)
Td (on/off) @ 25°C: 30ns/75ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 176 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
71+8.54 EUR
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AUIRGPS4070D0 INFN-S-A0007019043-1.pdf?t.download=true&u=5oefqw
AUIRGPS4070D0
Hersteller: International Rectifier
Description: IGBT TRENCH 600V 240A TO274-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 750 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 240 A
Part Status: Active
Gate Charge: 250 nC
Test Condition: 400V, 120A, 4.7Ohm, 15V
Switching Energy: 5.7mJ (on), 4.2mJ (off)
Td (on/off) @ 25°C: 40ns/140ns
IGBT Type: Trench
Supplier Device Package: PG-TO274-3-903
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Reverse Recovery Time (trr): 210 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Bulk
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+23.68 EUR
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AUIRGPS4070D0 INFN-S-A0007019043-1.pdf?t.download=true&u=5oefqw
Hersteller: International Rectifier
IGBT Chip N-CH 600V 240A 750000mW Automotive 3-Pin(3+Tab) Super-247 Транзистори
Produkt ist nicht verfügbar
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AUIRGR4045D IRSDS11577-1.pdf?t.download=true&u=5oefqw
AUIRGR4045D
Hersteller: International Rectifier
Description: IGBT TRENCH 600V 12A TO-252AA
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Part Status: Active
Gate Charge: 19.5 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
IGBT Type: Trench
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 4125 Stücke:
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AnzahlPrivatkunde
164+3.36 EUR
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AUIRGS30B60K-IR IRSDS11578-1.pdf?t.download=true&u=5oefqw
AUIRGS30B60K-IR
Hersteller: International Rectifier
Description: IGBT, 78A I(C), 600V V(BR)CES, N
Produkt ist nicht verfügbar
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AUIRGSL30B60K-IR IRSDS11578-1.pdf?t.download=true&u=5oefqw
Hersteller: International Rectifier
Description: IGBT, 78A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
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AUIRGSL4062D1 auirgs4062d1.pdf?fileId=5546d462533600a4015355ba996c1537
AUIRGSL4062D1
Hersteller: International Rectifier
Description: IGBT TRENCH 600V 59A TO-262
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+7.68 EUR
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AUIRL1404S INFN-S-A0002297051-1.pdf?t.download=true&u=5oefqw
AUIRL1404S
Hersteller: International Rectifier
Description: PFET, 160A I(D), 40V, 0.004OHM,
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2225 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
136+3.89 EUR
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AUIRL1404STRL INFN-S-A0002297051-1.pdf?t.download=true&u=5oefqw
AUIRL1404STRL
Hersteller: International Rectifier
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
auf Bestellung 80 Stücke:
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80+6.63 EUR
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AUIRL1404Z INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw
AUIRL1404Z
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22462 Stücke:
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AnzahlPrivatkunde
152+3.5 EUR
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AUIRL1404ZS INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw
AUIRL1404ZS
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9408 Stücke:
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AnzahlPrivatkunde
156+3.42 EUR
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AUIRL1404ZSTRL INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw
AUIRL1404ZSTRL
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1970 Stücke:
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AnzahlPrivatkunde
129+4.12 EUR
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AUIRL2203N IRSDS19168-1.pdf?t.download=true&u=5oefqw
AUIRL2203N
Hersteller: International Rectifier
Description: AUTOMOTIVE N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2385 Stücke:
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AnzahlPrivatkunde
189+2.92 EUR
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AUIRL3705N IRSDS11401-1.pdf?t.download=true&u=5oefqw
AUIRL3705N
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22592 Stücke:
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AnzahlPrivatkunde
176+3.12 EUR
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AUIRL3705Z IRSDS11212-1.pdf?t.download=true&u=5oefqw
AUIRL3705Z
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
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AnzahlPrivatkunde
197+2.81 EUR
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AUIRL3705ZL IRSDS11212-1.pdf?t.download=true&u=5oefqw
AUIRL3705ZL
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 75A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8871 Stücke:
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AnzahlPrivatkunde
161+3.42 EUR
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AUIRL3705ZS INFN-S-A0002296977-1.pdf?t.download=true&u=5oefqw
AUIRL3705ZS
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8500 Stücke:
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AnzahlPrivatkunde
179+3.08 EUR
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AUIRL3705ZSTRL INFN-S-A0002296977-1.pdf?t.download=true&u=5oefqw
AUIRL3705ZSTRL
Hersteller: International Rectifier
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4 Stücke:
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AnzahlPrivatkunde
4+137.68 EUR
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AUIRL7732S2TR1 auirl7732s2.pdf
Hersteller: International Rectifier
Транзистори
Produkt ist nicht verfügbar
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AUIRL7736M2TR IRSDS11526-1.pdf?t.download=true&u=5oefqw
AUIRL7736M2TR
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 179A DIRECTFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5055 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 67A, 10V
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Bulk
auf Bestellung 13183 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
163+3.71 EUR
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AUIRL7766M2TR INFN-S-A0002298803-1.pdf?t.download=true&u=5oefqw
AUIRL7766M2TR
Hersteller: International Rectifier
Description: MOSFET N-CH 100V 10A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 31A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5305 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 37084 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
165+3.36 EUR
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AUIRLI2505 auirli2505.pdf
Hersteller: International Rectifier
Description: MOSFET N CH 55V 58A TO-220AB
Produkt ist nicht verfügbar
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AUIRLL024NTR-IR INFN-S-A0002298883-1.pdf?t.download=true&u=5oefqw
AUIRLL024NTR-IR
Hersteller: International Rectifier
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3529 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
330+1.67 EUR
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AUIRLR014N info-tauirlr014n.pdf
AUIRLR014N
Hersteller: International Rectifier
N-MOSFET 55V 10A 140mΩ 28W AUIRLR014N International Rectifier TAUIRLR014N
Anzahl je Verpackung: 25 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
50+1.26 EUR
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AUIRLR014NTRL INFN-S-A0002297177-1.pdf?t.download=true&u=5oefqw
AUIRLR014NTRL
Hersteller: International Rectifier
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+6.06 EUR
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AUIRLR024N INFN-S-A0002298685-1.pdf?t.download=true&u=5oefqw
AUIRLR024N
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
314+1.76 EUR
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