Produkte > DMT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMT6015LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.16W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V | auf Bestellung 7488 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6015LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI B T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6015LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.16W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6015LPS-13 | Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 16Vgss 1.16W 31A | auf Bestellung 2466 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6015LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 60A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.5A Pulsed drain current: 60A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±16V On-state resistance: 24mΩ Mounting: SMD Gate charge: 18.9nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6015LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6015LPSW-13 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6015LSS-13 | DIODES INC. | Description: DIODES INC. - DMT6015LSS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 9.2 A, 0.0124 ohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0124ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2290 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6015LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6015LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.5A Pulsed drain current: 60A Power dissipation: 2.1W Case: SO8 Gate-source voltage: ±16V On-state resistance: 21mΩ Mounting: SMD Gate charge: 18.9nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6015LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V | auf Bestellung 197513 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6015LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | auf Bestellung 207500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6015LSS-13 | DIODES INC. | Description: DIODES INC. - DMT6015LSS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 9.2 A, 0.0124 ohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0124ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2290 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6015LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6015LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V | auf Bestellung 192500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6015LSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 17506 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LFDF-13 | Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 8.9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.9A Pulsed drain current: 60A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 17nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 8.9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-7 | Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 8.9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT6016LFDF-7 - Leistungs-MOSFET, n-Kanal, 60 V, 8.9 A, 0.16 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 820mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: DMT6016LFDF productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.16ohm | auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6016LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 60V 8.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Pulsed drain current: 60A Power dissipation: 1.2W Gate charge: 17nC Polarisation: unipolar Drain current: 8.9A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 8.9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 60V 8.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LJ3 | Diodes Incorporated | Description: MOSFET BVDSS: 41V-60V TO251 | Produkt ist nicht verfügbar | Mindestbestellmenge: 75 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LJ3 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LPS-13 | Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | auf Bestellung 2347 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10.6A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.23W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10.6A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 1.23W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LPSW-13 | Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI5060-8 (Type UX) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.84W (Ta), 41.67W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 43A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 41V-60V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6016LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Pulsed drain current: 60A Power dissipation: 2.1W Gate charge: 17nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6016LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | auf Bestellung 8994 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LSS-13 | Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6016LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6016LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6016LSS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LDV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 25.3A PWRDI3333 Supplier Device Package: PowerDI3333-8 (Type UXC) Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LDV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 25.3 PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | auf Bestellung 1758 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 25.3 PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LDV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R 2K | auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 65V 8.1A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Pulsed drain current: 50A Power dissipation: 1.76W Gate charge: 15.3nC Polarisation: unipolar Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 65V Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 23mΩ Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 65V 8.1A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 65V 8.1A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 800mW (Ta) | auf Bestellung 2656 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LFV-7 | Diodes Incorporated | Description: MOSFET N-CH 65V 36A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V | auf Bestellung 80504 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LFV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 633 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LFV-7 | Diodes Incorporated | Description: MOSFET N-CH 65V 36A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V | auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | auf Bestellung 3010 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6017LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.5A Pulsed drain current: 60A Power dissipation: 2.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 17nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LSS-13 | DIODES INC. | Description: DIODES INC. - DMT6017LSS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 9.2 A, 0.018 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2245 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6017LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6017LSS-13 | DIODES INC. | Description: DIODES INC. - DMT6017LSS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 9.2 A, 0.018 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.018ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2245 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6017LSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-13 | Diodes Zetex | Trans MOSFET N-CH 60V 8.8A 8-Pin VDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6018LDR-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 8.8A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 | auf Bestellung 4127 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 14393 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-13 | DIODES INC. | Description: DIODES INC. - DMT6018LDR-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.013 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.013ohm Verlustleistung, p-Kanal: 1.9W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: V-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.013ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.9W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 15483 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6018LDR-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 8.8A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6018LDR-13 | DIODES INC. | Description: DIODES INC. - DMT6018LDR-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.013 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.013ohm Verlustleistung, p-Kanal: 1.9W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: V-DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.013ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.9W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 15483 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6018LDR-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 8.8A 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6018LDR-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-7 | DIODES INC. | Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 8.8A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: VDFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C | auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6018LDR-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 8.8A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active | auf Bestellung 243 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6018LDR-7 | DIODES INC. | Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohm tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8.8A Dauer-Drainstrom Id, p-Kanal: 8.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 8.8A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: VDFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C | auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT6030LFCL-7 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V X1-DFN1616 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN1616-6 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6030LFCL-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V X1-DFN1616-6 T&R 3K | auf Bestellung 3653 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6030LFCL-7 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V X1-DFN1616 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN1616-6 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V | auf Bestellung 4758 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6030LFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6030LFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 6.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 6.5A, 10V Power Dissipation (Max): 860mW (Ta), 9.62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6030LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.4A; Idm: 40A; 1.76W Case: U-DFN2020-6 Gate charge: 9.1nC On-state resistance: 35mΩ Power dissipation: 1.76W Drain current: 5.4A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Kind of package: 13 inch reel; tape Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT6030LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 6.8A 6UDFN | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6030LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT615MLFV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT615MLFV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V60V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT616MLSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V | auf Bestellung 22418 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT616MLSS-13 | Diodes | MOSFET BVDSS: 41V-60V SO-8 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT616MLSS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V Power Dissipation (Max): 1.39W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT61M5SPSW-13 | DIODES INC. | Description: DIODES INC. - DMT61M5SPSW-13 - Leistungs-MOSFET, n-Kanal, 60 V, 215 A, 1100 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 215A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 2.7W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1100µohm | auf Bestellung 1341 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT61M5SPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V | auf Bestellung 17071 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT61M5SPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K | auf Bestellung 2469 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT61M5SPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT61M5SPSW-13 | DIODES INC. | Description: DIODES INC. - DMT61M5SPSW-13 - Leistungs-MOSFET, n-Kanal, 60 V, 215 A, 1100 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 215A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - usEccn: EAR99 Verlustleistung Pd: 2.7W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 2.7W Bauform - Transistor: PowerDI 5060 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0011ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1100µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 1341 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT61M8SPS-13 | DIODES INC. | Description: DIODES INC. - DMT61M8SPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 205 A, 1600 µohm, PowerDI5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 205A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 2.7W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1600µohm | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT61M8SPS-13 | DIODES INC. | Description: DIODES INC. - DMT61M8SPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 205 A, 1600 µohm, PowerDI5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 205A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 2.7W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1600µohm | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT62M7SPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT63M5LFG-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT63M5LFG-13 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2378 pF @ 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 90A (Tc) Power Dissipation (Max): 2.83W (Ta), 52.7W (Tc) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT63M5LFG-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT63M5LFG-7 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2378 pF @ 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 90A (Tc) Power Dissipation (Max): 2.83W (Ta), 52.7W (Tc) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT63M6LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |