Produkte > IPD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD034N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1622 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD034N06N3GATMA1 | Infineon Technologies | MOSFETs N | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD034N06N3GATMA1 | INFINEON | Description: INFINEON - IPD034N06N3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 3400 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 167W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3400µohm | auf Bestellung 3829 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD034N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Mounting: SMD Power dissipation: 167W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252-3 On-state resistance: 3.4mΩ | auf Bestellung 585 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD034N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD034N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 100A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V | auf Bestellung 29537 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD034N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1382 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD034N06N3GATMA1 | INFINEON | Description: INFINEON - IPD034N06N3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 3400 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 167W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3400µohm | auf Bestellung 3829 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD035N06L3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 2.2V @ 93µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD036N04L G Produktcode: 166396
zu Favoriten hinzufügen
Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD036N04L G | Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 | auf Bestellung 465 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1825 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V | auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | INFINEON | Description: INFINEON - IPD036N04LGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 90 A, 3600 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 94W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 3 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3600µohm | auf Bestellung 1236 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1825 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 94W; DPAK,TO252 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 94W Case: DPAK; TO252 On-state resistance: 3.9mΩ Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Gate charge: 59nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | MOSFETs IFX FET 40V | auf Bestellung 2462 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | INFINEON | Description: INFINEON - IPD036N04LGATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 90 A, 3600 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 94W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 3 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3600µohm | auf Bestellung 1236 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V | auf Bestellung 37903 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD036N04LGBTMA1 | Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD036N04LGBTMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A TO252-3 Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 2V @ 45µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD036N04LGBTMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD036N04LGBTMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD038N04N G | Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD038N04NGBTMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD038N04NGBTMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 90A TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4V @ 45µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD038N06N3 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPD038N06N3 G | Infineon Technologies | MOSFETs N-Ch 60V 90A DPAK-2 OptiMOS 3 | auf Bestellung 374 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD038N06N3G | INFINEON | 09+ QFP-64 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD038N06N3G | Infineon Technologies | Description: IPD038N06N3G | auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD038N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD038N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 692 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD038N06N3GATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V | auf Bestellung 2515 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD038N06N3GATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD038N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.85mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 52µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD038N06NF2SATMA1 | Infineon Technologies | MOSFETs IFX FET 60V | auf Bestellung 3702 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD038N06NF2SATMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.85mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 52µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V | auf Bestellung 3814 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD03N03LA | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD03N03LA G | Infineon Technologies | Description: MOSFET N-CH 25V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: PG-TO252-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD03N03LAG | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD03N03LAP | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPD03N03LB | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD03N03LB G | Infineon Technologies | Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 60A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: PG-TO252-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD03NLBG | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03L G | Infineon Technologies | MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS 3 | auf Bestellung 2015 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD040N03L G E8177 | Infineon Technologies | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LF2SATMA1 | Infineon Technologies | Description: IPD040N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V | auf Bestellung 1846 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD040N03LF2SATMA1 | INFINEON | Description: INFINEON - IPD040N03LF2SATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 73 A, 4050 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 73A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.35V euEccn: NLR Verlustleistung: 75W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4050µohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 3898 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N03LF2SATMA1 | Infineon Technologies | Power-Transistor MOSFET | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N03LF2SATMA1 | Infineon Technologies | Power-Transistor MOSFET | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N03LF2SATMA1 | Infineon Technologies | MOSFETs Addresses a broad range of applications from low- to high-switching frequency | auf Bestellung 3706 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD040N03LF2SATMA1 | Infineon Technologies | Description: IPD040N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Supplier Device Package: PG-TO252-3-34 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LF2SATMA1 | INFINEON | Description: INFINEON - IPD040N03LF2SATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 73 A, 4050 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 73A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.35V euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4050µohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 3898 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N03LF2SATMA1 | Infineon Technologies | Power-Transistor MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LG | Infineon Technologies | Description: OPTLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V | auf Bestellung 523 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD040N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 447 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N03LGATMA1 | Infineon Technologies | MOSFETs IFX FET 15V-30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 447 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N03LGATMA1 Produktcode: 128410
zu Favoriten hinzufügen
Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD040N03LGATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LGATMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LGATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 | auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N03LGBTMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 90A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N03LGBTMA1 | Infineon Technologies | MOSFETs N-Ch 30V 90A DPAK-2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD040N08NF2SATMA1 | Infineon Technologies | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V | auf Bestellung 2933 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD040N08NF2SATMA1 | Infineon Technologies | MOSFETs TRENCH 40<-<100V | auf Bestellung 2563 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD040N08NF2SATMA1 | INFINEON | Description: INFINEON - IPD040N08NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 129 A, 3400 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 129A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 3.8V Verlustleistung: 150W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3400µohm | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD040N08NF2SATMA1 | Infineon Technologies | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD040N08NF2SATMA1 | INFINEON | Description: INFINEON - IPD040N08NF2SATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 129 A, 3400 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 129A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3.8V Verlustleistung: 150W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: StronglRFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3400µohm | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD042P03L3 | Infineon | Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD042P03L3 G | Infineon Technologies | MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD042P03L3G | Infineon technologies | auf Bestellung 178 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD042P03L3GATMA1 | Infineon Technologies | Description: MOSFET P-CH 30V 70A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V | auf Bestellung 11891 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GATMA1 | Infineon Technologies | Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 3990 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GATMA1 | INFINEON | Description: INFINEON - IPD042P03L3GATMA1 - Leistungs-MOSFET, AEC-Q101, p-Kanal, 30 V, 70 A, 4200 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4200µohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 6542 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GATMA1 | Infineon Technologies | Description: MOSFET P-CH 30V 70A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GATMA1 | Infineon Technologies | Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GATMA1 | Infineon Technologies | MOSFETs P-CHANNEL (NEGATIVE) | auf Bestellung 19437 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GATMA1 | INFINEON | Description: INFINEON - IPD042P03L3GATMA1 - Leistungs-MOSFET, AEC-Q101, p-Kanal, 30 V, 70 A, 4200 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4200µohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 6542 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GATMA1 | Infineon Technologies | Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD042P03L3GBTMA1 | Infineon Technologies | MOSFETs P-Ch -30V 70A DPAK-2 OptiMOS P3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD042P03L3GBTMA1 | Infineon Technologies | Description: MOSFET P-CH 30V 70A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 2V @ 270µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD042P03L3GBTMA1 | Infineon Technologies | Description: MOSFET P-CH 30V 70A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO252-3-11 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD046N08N5 | Infineon Technologies | MOSFETs TRENCH 40<-<100V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD046N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD046N08N5ATMA1 | Infineon Technologies | MOSFETs DIFFERENTIATED MOSFETS | auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD046N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 90A TO252-3 Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.8V @ 65µA | auf Bestellung 1649 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD046N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD046N08N5ATMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 90A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.8V @ 65µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD046N08N5ATMA1 | Infineon Technologies | Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||
| IPD047N03LF2SATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 71A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD047N03LF2SATMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252 Polarisation: unipolar On-state resistance: 4.7mΩ Drain-source voltage: 30V Drain current: 71A Power dissipation: 65W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD047N03LF2SATMA1 | Infineon Technologies | Description: MOSFET N-CH 30V 71A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V | auf Bestellung 1564 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||
| IPD047N03LF2SATMA1 | Infineon Technologies | MOSFETs Addresses a broad range of applications from low- to high-switching frequency | auf Bestellung 1979 Stücke: Lieferzeit 10-14 Tag (e) |
|