Produkte > IPU
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| IPU60R1K0CE | Infineon technologies | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPU60R1K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V TO-251-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K0CEAKMA2 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K0CEAKMA2 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R1K0CEAKMA2 - IPU60R1K0 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R1K0CEAKMA2 | Infineon Technologies | Description: MOSFET N-CH 600V 4.3A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K0CEBKMA1 | Infineon Technologies | MOSFET N-Ch 600V 4.3A IPAK-3 | auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V TO-251-3 | auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K4C6 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO-251-3-341 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole | auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R1K4C6 | Infineon Technologies | MOSFET N-Ch 650V 3.2A IPAK-3 | auf Bestellung 1384 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K4C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 3.2A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K4C6AKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R1K4C6AKMA1 - IPU60R1K4 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R1K4C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 3.2A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk | auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R1K4C6BKMA1 | Infineon Technologies | MOSFET N-Ch 650V 3.2A IPAK-3 | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K4C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 3.2A TO251-3 | auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 901 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K4C6BKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R1K4C6BKMA1 - IPU60R1K4 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 13500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R1K5CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V TO-251-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K5CEAKMA2 | Infineon Technologies | Description: MOSFET N-CH 600V 3.1A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V | auf Bestellung 844 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R1K5CEAKMA2 | Infineon Technologies | MOSFETs CONSUMER | auf Bestellung 2928 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R1K5CEBKMA1 | Infineon Technologies | MOSFET N-Ch 600V 3.1A IPAK-3 | auf Bestellung 1170 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R1K5CEBKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R1K5CEBKMA1 - IPU60R1K5 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 8500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R1K5CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 3.1A TO251 Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 3.5V @ 90µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R2K0C6 | Infineon Technologies | MOSFET N-Ch 650V 2.4A IPAK-3 | auf Bestellung 1351 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R2K0C6AKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R2K0C6AKMA1 - IPU60R2K0 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R2K0C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R2K0C6AKMA1 | Infineon Technologies | MOSFET | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R2K0C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.4A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 22.3W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube | auf Bestellung 47296 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R2K0C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R2K0C6BKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R2K0C6BKMA1 - IPU60R2K0 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 216000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R2K0C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 22.3W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA | auf Bestellung 352500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R2K1CE | Infineon technologies | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPU60R2K1CEAKMA1 | Infineon Technologies | MOSFETs CONSUMER | auf Bestellung 3082 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R2K1CEAKMA1 | Infineon Technologies | Description: CONSUMER Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube | auf Bestellung 4469 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R2K1CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | auf Bestellung 6512 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R2K1CEBKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R2K1CEBKMA1 - IPU60R2K1 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 6512 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R2K1CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 2.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R3K4CEAKMA1 | Infineon Technologies | Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V | auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R3K4CEAKMA1 | Infineon Technologies | MOSFET | auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R3K4CEAKMA1 | Infineon Technologies | Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R3K4CEAKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R3K4CEAKMA1 - IPU60R3K4 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R600C6 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R600C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 7.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R600C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 7.3A TO251-3 | auf Bestellung 977 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R950C6 | Infineon Technologies | MOSFET N-Ch 650V 4.4A IPAK-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R950C6AKMA1 | Infineon Technologies | MOSFET LOW POWER_LEGACY | auf Bestellung 1265 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R950C6AKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 4.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R950C6AKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU60R950C6AKMA1 - IPU60R950 COOLMOS N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 117500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU60R950C6BKMA1 | Infineon Technologies | MOSFET N-Ch 650V 4.4A IPAK-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU60R950C6BKMA1 | Infineon Technologies | Description: MOSFET N-CH 600V 4.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU64CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 17A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 17A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 569 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU78CN10N G | Infineon Technologies | Description: MOSFET N-CH 100V 13A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 12µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K0CE | Infineon Technologies | MOSFETs N-Ch 800V 5.7A IPAK-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K0CEAKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU80R1K0CEAKMA1 - IPU80R1K0CE 800V COOLMOS N-CHANNEL POWE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEAKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 28495 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3-341 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K0CEAKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3-341 Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk | auf Bestellung 124500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K0CEAKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 37500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEAKMA1 | Infineon Technologies | MOSFETs CONSUMER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K0CEBKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 1410 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEBKMA1 | Infineon Technologies | MOSFETs N-Ch 800V 5.7A IPAK-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V | auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K0CEBKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEBKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU80R1K0CEBKMA1 - IPU80R1K0 - 800V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1410 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 5.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K2P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K2P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 4.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K2P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K2P7AKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU80R1K2P7AKMA1 - IPU80R1K2 - 800V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1425 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K2P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 4.5A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 80µA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk | auf Bestellung 1425 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K2P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K4CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K4CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3.9A TO251-3 Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.9V @ 240µA Power Dissipation (Max): 63W (Tc) | auf Bestellung 18925 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K4CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3.9A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.9V @ 240µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K4CEBKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU80R1K4CEBKMA1 - IPU80R1K4 - 800V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K4P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R1K4P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 4A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: PG-TO251-3-21 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V | auf Bestellung 119009 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K4P7AKMA1 | Infineon Technologies | MOSFETs LOW POWER_NEW | auf Bestellung 1318 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K4P7AKMA1 | Infineon | IPU80R1K4P7AKMA1 IPU80R1K4P7 Trans MOSFET N-CH 800V 4A TO-251 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K0P7 | Infineon Technologies | Infineon LOW POWER_NEW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K0P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K0P7AKMA1 | INFINEON | Description: INFINEON - IPU80R2K0P7AKMA1 - Leistungs-MOSFET, n-Kanal, 800 V, 3 A, 1.7 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 24W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.7ohm SVHC: No SVHC (21-Jan-2025) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K0P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K0P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K4P7AKMA1 | INFINEON | Description: INFINEON - IPU80R2K4P7AKMA1 - Leistungs-MOSFET, n-Kanal, 800 V, 2.5 A, 2 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 22W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 1214 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R2K4P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 2.5A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V | auf Bestellung 1339 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R2K4P7AKMA1 | Infineon Technologies | MOSFET LOW POWER_NEW | auf Bestellung 1157 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R2K4P7AKMA1 | Infineon Technologies | Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K4P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 2.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K8CE | Infineon Technologies | MOSFET N-Ch 800V 1.9A IPAK-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K8CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.9A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V | auf Bestellung 14499 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R2K8CEAKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.9A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K8CEAKMA1 | Infineon Technologies | MOSFET CONSUMER | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPU80R2K8CEAKMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPU80R2K8CEAKMA1 - IPU80R2K8 - 800V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 14499 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R2K8CEBKMA1 | Infineon Technologies | Description: MOSFET N-CH 800V 1.9A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.9V @ 120µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |