Produkte > AIM
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| AIMCQ120R030M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V Qualification: AEC-Q101 | auf Bestellung 1568 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R040M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 6.4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMCQ120R040M1TXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive MOSFET 1200 V | auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R040M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 6.4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V Qualification: AEC-Q101 | auf Bestellung 577 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R060M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 4.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V Qualification: AEC-Q101 | auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R060M1TXTMA1 | Infineon Technologies | SiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R060M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V Power Dissipation (Max): 259W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 4.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMCQ120R080M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.1V @ 3.3mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) | auf Bestellung 620 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R080M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.1V @ 3.3mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMCQ120R080M1TXTMA1 | Infineon Technologies | SiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture | auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R120M1TXTMA1 | Infineon Technologies | SiC MOSFETs SIC_DISCRETE | auf Bestellung 464 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R120M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 2.2mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMCQ120R120M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V Power Dissipation (Max): 161W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 2.2mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMCQ120R160M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.1V @ 1.5mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Mounting Type: Surface Mount | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R160M1TXTMA1 | Infineon Technologies | Description: SIC_DISCRETE Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.1V @ 1.5mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) FET Type: N-Channel | auf Bestellung 913 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R160M1TXTMA1 | Infineon Technologies | SiC MOSFETs SIC_DISCRETE | auf Bestellung 1478 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDC-10V-1000V | Aim Dynamics | Description: TRANSDUCER 0-100V:0-10VDC Part Status: Active Input Range: 0 ~ 1000VDC Response Time: 10ms Voltage - Supply: 15 ~ 36VDC Termination Style: Screw Terminal Operating Temperature: -35°C ~ 100°C Accuracy: 0.005% Type: DC Voltage Transducer Output: 0 ~ 10VDC Mounting Type: DIN Rail, Wall Mount Packaging: Bulk | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDC-10V-100V | Aim Dynamics | Description: TRANSDUCER 0-100V:0-10VDC Part Status: Active Input Range: 0 ~ 100VDC Response Time: 10ms Voltage - Supply: 15 ~ 36VDC Termination Style: Screw Terminal Operating Temperature: -35°C ~ 100°C Accuracy: 0.005% Type: DC Voltage Transducer Output: 0 ~ 10VDC Mounting Type: DIN Rail, Wall Mount Packaging: Bulk | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDC-420-1000V | Aim Dynamics | Description: TRANSDUCER 0-1000V:4-20MA Part Status: Active Input Range: 0 ~ 1000VDC Response Time: 10ms Voltage - Supply: 15 ~ 36VDC Termination Style: Screw Terminal Operating Temperature: -35°C ~ 100°C Accuracy: 0.005% Type: DC Voltage Transducer Output: 4 ~ 20mA Mounting Type: DIN Rail, Wall Mount Packaging: Bulk | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDC-420-100V | Aim Dynamics | Description: TRANSDUCER 0-100V:4-20MA Part Status: Active Input Range: 0 ~ 100VDC Response Time: 10ms Voltage - Supply: 15 ~ 36VDC Termination Style: Screw Terminal Operating Temperature: -35°C ~ 100°C Accuracy: 0.005% Type: DC Voltage Transducer Output: 4 ~ 20mA Mounting Type: DIN Rail, Wall Mount Packaging: Bulk | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDC-5V-1000V | Aim Dynamics | Description: TRANSDUCER 0-1000V:0-5VDC Packaging: Bulk Part Status: Active Input Range: 0 ~ 1000VDC Response Time: 10ms Voltage - Supply: 15 ~ 36VDC Termination Style: Screw Terminal Operating Temperature: -35°C ~ 100°C Accuracy: 0.005% Type: DC Voltage Transducer Output: 0 ~ 5VDC Mounting Type: DIN Rail, Wall Mount | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDC-5V-100V | Aim Dynamics | Description: TRANSDUCER 0-100V:0-5VDC Part Status: Active Input Range: 0 ~ 100VDC Response Time: 10ms Voltage - Supply: 15 ~ 36VDC Termination Style: Screw Terminal Operating Temperature: -35°C ~ 100°C Accuracy: 0.005% Type: DC Voltage Transducer Output: 0 ~ 5VDC Mounting Type: DIN Rail, Wall Mount Packaging: Bulk | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R004M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R007M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R007M2HXTMA1 | Infineon Technologies | Description: AIMDQ75R007M2HXTMA1 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 27.7mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 840 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R007M2HXTMA1 | Infineon Technologies | Description: AIMDQ75R007M2HXTMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 27.7mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 840 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R008M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R008M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 173 A, 750 V, 0.0106 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 173A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 625W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0106ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R008M1HXUMA1 | Infineon Technologies | Description: AUTOMOTIVE_SICMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 32.4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R008M1HXUMA1 | Infineon Technologies | MOSFETs Y | auf Bestellung 635 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R008M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R008M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 173 A, 750 V, 0.0106 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 173A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V euEccn: NLR Verlustleistung: 625W Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0106ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R008M1HXUMA1 | Infineon Technologies | Description: AUTOMOTIVE_SICMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 32.4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R016M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 0V, 18V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Power Dissipation (Max): 384W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R016M1HXUMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_SICMOS | auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R016M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R016M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 98 A, 750 V, 0.022 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 384W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 621 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R016M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 0V, 18V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.6V @ 14.9mA Power Dissipation (Max): 384W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 41.5A, 18V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V | auf Bestellung 327 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R016M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R016M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 98 A, 750 V, 0.022 ohm, HDSOP Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V euEccn: NLR Verlustleistung: 384W Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: No Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 621 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R016M2HXTMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 12.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R016M2HXTMA1 | INFINEON | Description: INFINEON - AIMDQ75R016M2HXTMA1 - Siliziumkarbid-MOSFET, AEC-Q101, Eins, n-Kanal, 103 A, 750 V, 0.014 ohm, HDSOP tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 103A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 394W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC G2 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.014ohm | auf Bestellung 876 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R016M2HXTMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 12.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 633 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R016M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive Power Device 750 V G2 | auf Bestellung 1401 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R020M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 11.7mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R020M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 11.7mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R020M1HXUMA1 | Infineon Technologies | SiC MOSFETs AUTOMOTIVE_SICMOS | auf Bestellung 356 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R020M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive Power Device 750 V G2 | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R025M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive Power Device 750 V G2 | auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R027M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 303 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R027M1HXUMA1 | Infineon Technologies | SiC MOSFETs AUTOMOTIVE_SICMOS | auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R027M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R033M2HXTMA1 | Infineon Technologies | Description: AIMDQ75R033M2HXTMA1 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.9mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R033M2HXTMA1 | Infineon Technologies | Description: AIMDQ75R033M2HXTMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.9mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R033M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive Power Device 750 V G2 | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R040M1HXUMA1 | Infineon Technologies | Description: IGBT Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R040M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R040M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 47 A, 750 V, 0.052 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 211W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R040M1HXUMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_SICMOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R040M1HXUMA1 | Infineon Technologies | Description: IGBT Packaging: Cut Tape (CT) | auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R040M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R040M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 47 A, 750 V, 0.052 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 211W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R040M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK | auf Bestellung 787 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R050M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R060M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R060M1HXUMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_SICMOS | auf Bestellung 1218 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R060M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R060M2HXTMA1 | Infineon Technologies | SiC MOSFETs CoolSiC Automotive Power Device 750 V G2 | auf Bestellung 758 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R090M1HXUMA1 | Infineon Technologies | Description: AIMDQ75R090M1HXUMA1 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.6V @ 2.6mA Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tj) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R090M1HXUMA1 | Infineon Technologies | Description: AIMDQ75R090M1HXUMA1 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.6V @ 2.6mA Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tj) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R090M1HXUMA1 | Infineon Technologies | SiC MOSFETs AUTOMOTIVE_SICMOS | auf Bestellung 726 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R140M1HXUMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_SICMOS | auf Bestellung 687 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R140M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V Qualification: AEC-Q101 | auf Bestellung 704 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMDQ75R140M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R140M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 17 A, 750 V, 0.182 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 100W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.182ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMDQ75R140M1HXUMA1 | Infineon Technologies | Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 1.7mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMDQ75R140M1HXUMA1 | INFINEON | Description: INFINEON - AIMDQ75R140M1HXUMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 17 A, 750 V, 0.182 ohm, HDSOP tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 100W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolSiC Gen I Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.182ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMEL12 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AIMEL25128N | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AIMH021-050A-420 | Aim Dynamics | Description: 21MM SPLIT-CORE 50A:4-20MA UNI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Unidirectional Mounting Type: Panel Mount Output: Ratiometric, 4mA ~ 20mA Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 50A Part Status: Active Number of Channels: 1 | auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-050A-420B | Aim Dynamics | Description: 21MM SPLIT-CORE 50A:4-20MA BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, 4mA ~ 20mA Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 50A Part Status: Active Number of Channels: 1 | auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-050A-5V | Aim Dynamics | Description: 21MM SPLIT-CORE 50A:5V BI Number of Channels: 1 Part Status: Active Current - Sensing: 50A Current - Supply (Max): 35mA For Measuring: AC/DC Sensor Type: Hall Effect Voltage - Supply: ±15V Operating Temperature: -10°C ~ 85°C Accuracy: ±1% Frequency: DC ~ 10kHz Output: Ratiometric, ±5V Mounting Type: Panel Mount Polarization: Bidirectional Package / Case: Module, Single Pass Through Packaging: Bag | auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-050A-5VT | Aim Dynamics | Description: 21MM SPLIT-CORE 50A:5V UNI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Unidirectional Mounting Type: Panel Mount Output: Ratiometric, 0V ~ 5V Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: 12V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 50A Part Status: Active Number of Channels: 1 | auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-100A-420 | Aim Dynamics | Description: 21MM SPLIT-CORE 100A:4-20MA UNI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Unidirectional Mounting Type: Panel Mount Output: Ratiometric, 4mA ~ 20mA Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 100A Part Status: Active Number of Channels: 1 | auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-100A-420B | Aim Dynamics | Description: 21MM SPLIT-CORE 100A:4-20MA BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, 4mA ~ 20mA Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 100A Part Status: Active Number of Channels: 1 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMH021-100A-5V | Aim Dynamics | Description: 21MM SPLIT-CORE 100A:5V BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, ±5V Frequency: DC ~ 10kHz Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: AC/DC Current - Supply (Max): 35mA Current - Sensing: 100A Part Status: Active Number of Channels: 1 | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-100A-5VT | Aim Dynamics | Description: 21MM SPLIT-CORE 100A:5V UNI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Unidirectional Mounting Type: Panel Mount Output: Ratiometric, 0V ~ 5V Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: 12V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 100A Part Status: Active Number of Channels: 1 | auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-200A-420 | Aim Dynamics | Description: 21MM SPLIT-CORE 200A:4-20MA UNI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Unidirectional Mounting Type: Panel Mount Output: Ratiometric, 4mA ~ 20mA Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 200A Part Status: Active Number of Channels: 1 | auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-200A-420B | Aim Dynamics | Description: 21MM SPLIT-CORE 200A:4-20MA BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, 4mA ~ 20mA Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 200A Part Status: Active Number of Channels: 1 | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-200A-5V | Aim Dynamics | Description: 21MM SPLIT-CORE 200A:5V BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, ±5V Frequency: DC ~ 10kHz Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: AC/DC Current - Supply (Max): 35mA Current - Sensing: 200A Part Status: Active Number of Channels: 1 | auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH021-200A-5VT | Aim Dynamics | Description: 21MM SPLIT-CORE 200A:5V UNI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Unidirectional Mounting Type: Panel Mount Output: Ratiometric, 0V ~ 5V Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: 12V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 200A Part Status: Active Number of Channels: 1 | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-1000A-420 | Aim Dynamics | Description: 40MM SPLIT-CORE 1000A:4-20MA UNI Number of Channels: 1 Part Status: Active Current - Sensing: 1000A Current - Supply (Max): 35mA For Measuring: DC Sensor Type: Hall Effect Voltage - Supply: ±15V Operating Temperature: -10°C ~ 85°C Accuracy: ±1% Frequency: DC Output: Ratiometric, 4mA ~ 20mA Mounting Type: Panel Mount Polarization: Unidirectional Package / Case: Module, Single Pass Through Packaging: Bag | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-1000A-420B | Aim Dynamics | Description: 40MM SPLIT-CORE 1000A:4-20MA BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, 4mA ~ 20mA Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 1000A Part Status: Active Number of Channels: 1 | auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-1000A-5V | Aim Dynamics | Description: 40MM SPLIT-CORE 1000A:5V BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, ±5V Frequency: DC ~ 10kHz Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: AC/DC Current - Supply (Max): 35mA Current - Sensing: 1000A Part Status: Active Number of Channels: 1 | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-1000A-5VT | Aim Dynamics | Description: 40MM SPLIT-CORE 1000A:5V UNI Number of Channels: 1 Part Status: Active Current - Sensing: 1000A Current - Supply (Max): 35mA For Measuring: DC Sensor Type: Hall Effect Voltage - Supply: 12V Operating Temperature: -10°C ~ 85°C Accuracy: ±1% Frequency: DC Output: Ratiometric, 0V ~ 5V Mounting Type: Panel Mount Polarization: Unidirectional Package / Case: Module, Single Pass Through Packaging: Bag | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-500A-420 | Aim Dynamics | Description: 40MM SPLIT-CORE 500A:4-20MA UNI Accuracy: ±1% Frequency: DC Output: Ratiometric, 4mA ~ 20mA Mounting Type: Panel Mount Polarization: Unidirectional Package / Case: Module, Single Pass Through Packaging: Bag Number of Channels: 1 Part Status: Active Current - Sensing: 500A Current - Supply (Max): 35mA For Measuring: DC Sensor Type: Hall Effect Voltage - Supply: ±15V Operating Temperature: -10°C ~ 85°C | auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-500A-420B | Aim Dynamics | Description: 40MM SPLIT-CORE 500A:4-20MA BI Package / Case: Module, Single Pass Through Packaging: Bag Number of Channels: 1 Part Status: Active Current - Sensing: 500A Current - Supply (Max): 35mA For Measuring: DC Sensor Type: Hall Effect Voltage - Supply: ±15V Operating Temperature: -10°C ~ 85°C Accuracy: ±1% Frequency: DC Output: Ratiometric, 4mA ~ 20mA Mounting Type: Panel Mount Polarization: Bidirectional | auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-500A-5V | Aim Dynamics | Description: 40MM SPLIT-CORE 500A:5V BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, ±5V Frequency: DC ~ 10kHz Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: AC/DC Current - Supply (Max): 35mA Current - Sensing: 500A Part Status: Active Number of Channels: 1 | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-500A-5VT | Aim Dynamics | Description: 40MM SPLIT-CORE 500A:5V UNI Number of Channels: 1 Part Status: Active Current - Sensing: 500A Current - Supply (Max): 35mA For Measuring: DC Sensor Type: Hall Effect Voltage - Supply: 12V Operating Temperature: -10°C ~ 85°C Accuracy: ±1% Frequency: DC Output: Ratiometric, 0V ~ 5V Mounting Type: Panel Mount Polarization: Unidirectional Package / Case: Module, Single Pass Through Packaging: Bag | auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-600A-420 | Aim Dynamics | Description: CURRENT SENSOR 600A 4-20MA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMH040-800A-420 | Aim Dynamics | Description: 40MM SPLIT-CORE 800A:4-20MA UNI Number of Channels: 1 Part Status: Active Current - Sensing: 800A Current - Supply (Max): 35mA For Measuring: DC Sensor Type: Hall Effect Voltage - Supply: ±15V Operating Temperature: -10°C ~ 85°C Accuracy: ±1% Frequency: DC Output: Ratiometric, 4mA ~ 20mA Mounting Type: Panel Mount Polarization: Unidirectional Package / Case: Module, Single Pass Through Packaging: Bag | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-800A-420B | Aim Dynamics | Description: 40MM SPLIT-CORE 800A:4-20MA BI Package / Case: Module, Single Pass Through Packaging: Bag Number of Channels: 1 Part Status: Active Current - Sensing: 800A Current - Supply (Max): 35mA For Measuring: DC Sensor Type: Hall Effect Voltage - Supply: ±15V Operating Temperature: -10°C ~ 85°C Accuracy: ±1% Frequency: DC Output: Ratiometric, 4mA ~ 20mA Mounting Type: Panel Mount Polarization: Bidirectional | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-800A-5V | Aim Dynamics | Description: 40MM SPLIT-CORE 800A:5V BI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Bidirectional Mounting Type: Panel Mount Output: Ratiometric, ±5V Frequency: DC ~ 10kHz Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: ±15V Sensor Type: Hall Effect For Measuring: AC/DC Current - Supply (Max): 35mA Current - Sensing: 800A Part Status: Active Number of Channels: 1 | auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMH040-800A-5VT | Aim Dynamics | Description: 40MM SPLIT-CORE 800A:5V UNI Packaging: Bag Package / Case: Module, Single Pass Through Polarization: Unidirectional Mounting Type: Panel Mount Output: Ratiometric, 0V ~ 5V Frequency: DC Accuracy: ±1% Operating Temperature: -10°C ~ 85°C Voltage - Supply: 12V Sensor Type: Hall Effect For Measuring: DC Current - Supply (Max): 35mA Current - Sensing: 800A Part Status: Active Number of Channels: 1 | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMI0010 | Red Lion | Signal Conditioning 0 (4) to 20mA Passive Loop Powered Isolator | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMI0202 | Red Lion | Signal Conditioning ANALOG CURRENT MOD, 0202 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AIMI0202 | Red Lion Controls | Description: PASSIVE LOOP POWERED | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |