Produkte > CSD
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| CSD25201W15 | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD25201W15 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.033 ohm, DSBGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 700mV Verlustleistung: 1.5W Bauform - Transistor: DSBGA Anzahl der Pins: 9Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.033ohm | auf Bestellung 2285 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25201W15 | Texas Instruments | MOSFETs P-Channel NexFET Pwr MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25201W15 | Texas Instruments | Description: MOSFET P-CH 20V 4A 9DSBGA Packaging: Bulk Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 9-DSBGA Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V | auf Bestellung 1086 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25202W15 | Texas Instruments | Description: MOSFET P-CH 20V 4A 9DSBGA Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V | auf Bestellung 2590 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25202W15 | Texas Instruments | Trans MOSFET P-CH 20V 4A 9-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25202W15 | Texas Instruments | Trans MOSFET P-CH 20V 4A 9-Pin DSBGA T/R | auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25202W15 | Texas Instruments | MOSFETs 20V P-channel NexFET Pwr MOSFET A 595-CS A 595-CSD25202W15T | auf Bestellung 1367 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25202W15 | Texas Instruments | Description: MOSFET P-CH 20V 4A 9DSBGA Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25202W15 | Texas Instruments | Trans MOSFET P-CH 20V 4A 9-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25202W15T | Texas Instruments | MOSFETs 20V PCh NexFET Pwr M OSFET A 595-CSD25202W15 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25202W15T | Texas Instruments | Description: MOSFET P-CH 20V 4A 9DSBGA Part Status: Active Supplier Device Package: 9-DSBGA Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.05V @ 250µA Power Dissipation (Max): 500mW (Ta) Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V | auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25202W15T | Texas Instruments | Description: MOSFET P-CH 20V 4A 9DSBGA Supplier Device Package: 9-DSBGA Vgs(th) (Max) @ Id: 1.05V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V | auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25202W15T | Texas Instruments | Description: MOSFET P-CH 20V 4A 9DSBGA Packaging: Bulk Package / Case: 9-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 9-DSBGA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25211W1015 | Texas Instruments | Trans MOSFET P-CH 20V 3.2A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25211W1015 | Texas Instruments | Description: MOSFET P-CH 20V 3.2A 6DSBGA Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-DSBGA (1x1.5) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Packaging: Cut Tape (CT) | auf Bestellung 361 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25211W1015 | Texas Instruments | Trans MOSFET P-CH 20V 3.2A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25211W1015 | Texas Instruments | Description: MOSFET P-CH 20V 3.2A 6DSBGA Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25211W1015 | Texas Instruments | Trans MOSFET P-CH 20V 3.2A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25211W1015 | Texas Instruments | MOSFETs PCh NexFET Power MOS FET | auf Bestellung 2183 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25213W10 | Texas Instruments | Description: MOSFET P-CH 20V 1.6A 4DSBGA Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V | auf Bestellung 7931 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25213W10 | Texas Instruments | MOSFETs P-CH NexFET Pwr MOSF ET | auf Bestellung 5680 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25213W10 | Texas Instruments | Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R | auf Bestellung 2287 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25213W10 | Texas Instruments | Description: MOSFET P-CH 20V 1.6A 4DSBGA Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25213W10 | Texas Instruments | Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25213W10 | Texas Instruments | Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25301W1015 | Texas Instruments | Description: MOSFET P-CH 20V 2.2A 6DSBGA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25301W1015 | Texas Instruments | Description: MOSFET P-CH 20V 2.2A 6DSBGA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25302Q2 | Texas Instruments | Description: MOSFET P-CH 20V 5A 6SON Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-SON Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25302Q2 Produktcode: 67068
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| Transistoren > Bipolar-Transistoren PNP | Produkt ist nicht verfügbar
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| CSD25302Q2 | Texas Instruments | Description: MOSFET P-CH 20V 5A 6SON Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-SON Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25302Q2 | Texas Instruments | MOSFET PCH -20V -5A 6SON Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25302Q2 | Texas Instruments | MOSFET PCh NexFET Pwr MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25303W1015 | Texas Instruments | Description: MOSFET P-CH 20V 3A 6DSBGA Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DSBGA (1x1.5) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25303W1015 | Texas Instruments | Description: MOSFET P-CH 20V 3A 6DSBGA Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DSBGA (1x1.5) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Packaging: Bulk | auf Bestellung 4390 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25303W1015 | Texas Instruments | Description: MOSFET P-CH 20V 3A 6DSBGA Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DSBGA (1x1.5) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015 | Texas Instruments | Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015 | Texas Instruments | MOSFETs 20V P-channel NexFET Pwr MOSFET A 595-CS A 595-CSD25304W1015T | auf Bestellung 2632 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25304W1015 | Texas Instruments | Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015 | Texas Instruments | Description: MOSFET P-CH 20V 3A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V | auf Bestellung 2664 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25304W1015 | Texas Instruments | Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015 | Texas Instruments | Description: MOSFET P-CH 20V 3A 6DSBGA Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015T | Texas Instruments | MOSFETs 20V P-Ch NexFET A 59 5-CSD25304W1015 A 5 A 595-CSD25304W1015 | auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25304W1015T | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -41A; 0.75W; DSBGA6 Case: DSBGA6 Kind of channel: enhancement Technology: NexFET™ Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -41A Drain-source voltage: -20V Drain current: -3A On-state resistance: 92mΩ Power dissipation: 0.75W Gate-source voltage: ±8V Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015T | Texas Instruments | Description: MOSFET P-CH 20V 3A 6DSBGA Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25304W1015T | Texas Instruments | Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015T | Texas Instruments | Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25304W1015T | Texas Instruments | Description: MOSFET P-CH 20V 3A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V | auf Bestellung 1457 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25304W1015T | Texas Instruments | Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2 | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2 | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 48 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2 | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25310Q2 | Texas Instruments | Description: MOSFET P-CH 20V 20A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25310Q2 | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2 | Texas Instruments | MOSFETs 20-V P-CH NexFET Pwr MOSFET | auf Bestellung 5205 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25310Q2 | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -20A; Idm: 48A; 2.9W; WSON6 Type of transistor: P-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: -20V Drain current: -20A Pulsed drain current: 48A Power dissipation: 2.9W Case: WSON6 Gate-source voltage: ±8V On-state resistance: 89mΩ Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2 | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | auf Bestellung 2198 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25310Q2 | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2 | Texas Instruments | Description: MOSFET P-CH 20V 20A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V | auf Bestellung 19469 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25310Q2G4 | Texas Instruments | Current Sense Amplifiers #NAME? | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2T | Texas Instruments | Description: MOSFET P-CH 20V 20A 6WSON Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-WSON (2x2) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 2.9W (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) | auf Bestellung 11905 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25310Q2T | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2T | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -20A; Idm: 48A; 2.9W; WSON6 Type of transistor: P-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: -20V Drain current: -20A Pulsed drain current: 48A Power dissipation: 2.9W Case: WSON6 Gate-source voltage: ±8V On-state resistance: 89mΩ Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2T | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25310Q2T | Texas Instruments | Description: MOSFET P-CH 20V 20A 6WSON Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-WSON (2x2) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 2.9W (Ta) Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 11750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25310Q2T | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25310Q2T | Texas Instruments | MOSFETs -20-V P channel Nex FET power MOSFET si A 595-CSD25310Q2 | auf Bestellung 17033 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25310Q2T | Texas Instruments | Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25401Q3 | Texas Instruments | Description: MOSFET P-CH 20V 14A/60A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25401Q3 | Texas Instruments | MOSFET P-Ch NexFET Power MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25401Q3 | Texas Instruments | Description: MOSFET P-CH 20V 14A/60A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3A | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD25402Q3A - Leistungs-MOSFET, p-Kanal, 20 V, 35 A, 7700 µohm, VSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 69W Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 69W Bauform - Transistor: VSON Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0077ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 125°C Drain-Source-Durchgangswiderstand: 7700µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25402Q3A | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | auf Bestellung 1808 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25402Q3A | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3A | Texas Instruments | MOSFET P-CH 20V 76A 8VSON Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3A | TEXAS INSTRUMENTS | Description: TEXAS INSTRUMENTS - CSD25402Q3A - Leistungs-MOSFET, p-Kanal, 20 V, 35 A, 7700 µohm, VSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 69W Bauform - Transistor: VSON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 125°C Drain-Source-Durchgangswiderstand: 7700µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25402Q3A | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | auf Bestellung 212500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25402Q3A | Texas Instruments | Description: MOSFET P-CH 20V 76A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3A | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3A | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | auf Bestellung 1808 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25402Q3A | Texas Instruments | Description: MOSFET P-CH 20V 76A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3A | Texas Instruments | MOSFETs P-CH Pwr MOSFET | auf Bestellung 5349 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25402Q3AT | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25402Q3AT | Texas Instruments | Description: MOSFET P-CH 20V 15A/76A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V | auf Bestellung 7750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25402Q3AT | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25402Q3AT | Texas Instruments | MOSFETs #NAME? | auf Bestellung 5899 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25402Q3AT | Texas Instruments | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3AT | Texas Instruments | Description: MOSFET P-CH 20V 15A/76A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V | auf Bestellung 8142 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25402Q3AT | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -148A; 69W; VSONP8 Type of transistor: P-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Pulsed drain current: -148A Power dissipation: 69W Case: VSONP8 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25402Q3AT | Texas Instruments | MOSFET P-CH 20V 15A/76A 8VSON Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25404Q3 | Texas Instruments | Trans MOSFET P-CH 20V 60A 8-Pin VSON-CLIP EP T/R | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25404Q3 | Texas Instruments | MOSFETs 20V Pch MOSFET A 595 -CSD25404Q3T A 595- A 595-CSD25404Q3T | auf Bestellung 459 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25404Q3 | Texas Instruments | Description: MOSFET P-CH 20V 104A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25404Q3 | Texas Instruments | Trans MOSFET P-CH 20V 60A 8-Pin VSON-CLIP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25404Q3 | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; 20V; 60A; 96W Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Drain current: 60A Drain-source voltage: 20V Gate-source voltage: 12V Power dissipation: 96W | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25404Q3 | Texas Instruments | Transistor P-Channel MOSFET; 20V; 12V; 150mOhm; 104A; 96W; -55°C ~ 150°C; CSD25404Q3T CSD25404Q3 TCSD25404q3 Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| CSD25404Q3 | Texas Instruments | Trans MOSFET P-CH 20V 60A 8-Pin VSON-CLIP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD25404Q3 | Texas Instruments | Description: MOSFET P-CH 20V 104A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V | auf Bestellung 1904 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25404Q3T | TEXAS INSTRUMENTS | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; 96W; VSON-CLIP8 Kind of package: reel; tape Kind of channel: enhancement Technology: NexFET™ Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Case: VSON-CLIP8 Drain current: -60A Drain-source voltage: -20V Gate charge: 10.9nC Dimensions: 3.3x3.3mm On-state resistance: 5.5mΩ Gate-source voltage: ±12V Power dissipation: 96W | auf Bestellung 373 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD25404Q3T | Texas Instruments | Description: MOSFET P-CH 20V 104A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 4.5V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 10 V | auf Bestellung 6402 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD25404Q3T | Texas Instruments | P-канальний ПТ, Udss, В = 20, Id = 104 А, Ciss, пФ @ Uds, В = 2120 @ 10, Qg, нКл = 14,1 @ 4,5 В, Rds = 6,5 мОм @ 10 A, 4,5 В, Ugs(th) = 1,15 В @ 250 мкА, Р, Вт = 2,8, 96, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: PowerVDFN-8 Од. вим: Anzahl je Verpackung: 250 Stücke | verfügbar 50 Stücke: | Im Einkaufswagen Stück im Wert von UAH |