Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMN3053L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | auf Bestellung 410 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 410 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3053L-7 | DIODES INC. | Description: DIODES INC. - DMN3053L-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.036 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 760mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 955 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3053L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3053L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3055LFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDB-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 25A Power dissipation: 0.87W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 1695 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3055LFDB-7 | DIODES INC. | Description: DIODES INC. - DMN3055LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5 A, 5 A, 0.04 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.36W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.36W Betriebstemperatur, max.: 150°C | auf Bestellung 5966 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3055LFDB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K | auf Bestellung 1146 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3055LFDB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 25A Power dissipation: 0.87W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDB-7 | DIODES INC. | Description: DIODES INC. - DMN3055LFDB-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5 A, 5 A, 0.04 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.36W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.36W Betriebstemperatur, max.: 150°C | auf Bestellung 5966 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3055LFDBQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDBQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 810mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDBQ-7 | DIODES INC. | Description: DIODES INC. - DMN3055LFDBQ-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5 A, 5 A, 0.04 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.36W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.36W Betriebstemperatur, max.: 150°C | auf Bestellung 2175 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3055LFDBQ-7 | DIODES INCORPORATED | Category: Transistors - Unclassified Description: DMN3055LFDBQ-7 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3055LFDBQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 810mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3055LFDBQ-7 | DIODES INC. | Description: DIODES INC. - DMN3055LFDBQ-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 5 A, 5 A, 0.04 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.36W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.04ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.36W Betriebstemperatur, max.: 150°C | auf Bestellung 2175 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3055LFDBQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3059LCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V X4-DSN1006-3 T&R 10K | auf Bestellung 9864 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060L-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060L-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V | auf Bestellung 49990 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060L-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060L-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060L-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060L-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS 25V-30V | auf Bestellung 7399 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LCA3-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.9A X4DSN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V Power Dissipation (Max): 790mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V | auf Bestellung 11383 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LCA3-7 | Diodes Zetex | Trans MOSFET N-CH 30V 3.9A T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LCA3-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 3.9A X4DSN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V Power Dissipation (Max): 790mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K | auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LVT-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 3.6A TSOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: TSOT-23-6 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LVT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 3.6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: TSOT-26 | auf Bestellung 17925 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K | auf Bestellung 1518 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LVT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 3.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: TSOT-26 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT323 T&R 10K | auf Bestellung 9998 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LW-13 | Diodes Zetex | Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT323 T&R 3K | auf Bestellung 3550 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LW-7 | Diodes Zetex | Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT323 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3060LWQ-7 | DIODES INC. | Description: DIODES INC. - DMN3060LWQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 2.6 A, 0.048 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.048ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 5194 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3060LWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 14707 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LWQ-7 | DIODES INC. | Description: DIODES INC. - DMN3060LWQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 2.6 A, 0.048 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 1.8V Verlustleistung: 500mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.048ohm | auf Bestellung 5189 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3060LWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT323 T&R 3K | auf Bestellung 3484 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061LCA3-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V X4-DSN1006 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V Power Dissipation (Max): 1.12W Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 (Type C) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061LCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V X4-DSN1006-3 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061S-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061S-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061S-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 2750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061S-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SOT23 T&R 3K | auf Bestellung 4759 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061S-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT23 T&R Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 2795 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SVT-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 3.4A TSOT26 Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 880mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SVT-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V TSOT26 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K | auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SVTQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SVTQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SVTQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 3.4A TSOT26 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 880mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk | auf Bestellung 6007 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT323 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SOT323 T&R 3K | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V | auf Bestellung 98950 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SWQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 2.7A | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SOT323 T&R 10K | auf Bestellung 19070 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT323 T&R 3K | auf Bestellung 8788 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3061SWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT323 T&R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3061SWQ-7 | DIODES INC. | Description: DIODES INC. - DMN3061SWQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 2.7 A, 0.041 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 490mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1970 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-13 | DIODES INC. | Description: DIODES INC. - DMN3065LW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-323, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-13 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | auf Bestellung 23615 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3065LW-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3065LW-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R | auf Bestellung 5660000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-13 | DIODES INC. | Description: DIODES INC. - DMN3065LW-13 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-323, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-13 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3065LW-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V | auf Bestellung 64252 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3065LW-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT-323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V | auf Bestellung 37359 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3065LW-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R | auf Bestellung 141000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-7 | DIODES INC. | Description: DIODES INC. - DMN3065LW-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 770mW Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.052ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1483 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-7 | Diodes | Trans MOSFET Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMN3065LW-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R | auf Bestellung 357000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 4A SOT-323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3065LW-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R | auf Bestellung 357000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-7 | DIODES INC. | Description: DIODES INC. - DMN3065LW-7 - Leistungs-MOSFET, n-Kanal, 30 V, 4 A, 0.052 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 770mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1483 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Polarisation: unipolar Mounting: SMD Power dissipation: 0.77W Drain current: 4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: SOT323 On-state resistance: 85mΩ | auf Bestellung 1748 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3065LW-7 | Diodes Incorporated | MOSFETs 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | auf Bestellung 14083 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3065LW-7 | Diodes Zetex | Trans MOSFET N-CH 30V 4A 3-Pin SOT-323 T/R | auf Bestellung 1302000 Stücke: Lieferzeit 14-21 Tag (e) |
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