Produkte > MSC
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| MSCSM170TLM45C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM025CD3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM025CD3AG | Microchip Technology | Description: SIC 700V 538A D3 Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 538A (Tc) Supplier Device Package: D3 Part Status: Active | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM025CT6AG | Microchip Technology | Description: PM-MOSFET-SIC-SBD~-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM025CT6AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM025CT6LIAG | Microchip Technology | Description: PM-MOSFET-SIC-SBD~-SP6C LI | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM025CT6LIAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C LI | auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM025D3AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-D3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM025D3AG | Microchip Technology | Description: PM-MOSFET-SIC-D3 Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 1.882kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM025T6AG | Microchip Technology | Description: PM-MOSFET-SIC-SP6C Part Status: Active Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 1.882kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Vgs(th) (Max) @ Id: 2.4V @ 24mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM025T6LIAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6L1 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM025T6LIAG | Microchip Technology | Description: PM-MOSFET-SIC-SP6L1 Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 1.882kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM07CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM07CT3AG | Microchip Technology | Description: MOSFET 2N-CH 700V 353A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 988W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Supplier Device Package: SP3F | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM07CT3AG | Microchip Technology / Atmel | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 3 Stücke: Lieferzeit 311-315 Tag (e) |
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| MSCSM70AM07T3AG | Microchip Technology | Description: MOSFET 2N-CH 700V 353A Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 988W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM07T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM10CT3AG | Microchip Technology | Discrete Semiconductor Modules CC3235 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM10CT3AG | Microchip Technology | Description: MOSFET 2N-CH 700V 241A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 690W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM10T3AG | Microchip Technology | Description: MOSFET 2N-CH 700V 241A Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 690W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM10T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM19CT1AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM19CT1AG | Microchip Technology | Description: MOSFET 2N-CH 700V 124A SP1F Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 365W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube Supplier Device Package: SP1F Vgs(th) (Max) @ Id: 2.4V @ 4mA | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70AM19T1AG | Microchip Technology | Description: MOSFET 2N-CH 700V 124A Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 365W (Tc) | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70AM19T1AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP1F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70DUM017AG | Microchip Technology | Description: PM-MOSFET-SIC-SP6C Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 36mA Gate Charge (Qg) (Max) @ Vgs: 1935nC @ 20V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 360A, 20V Input Capacitance (Ciss) (Max) @ Vds: 40500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 1021A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 2750W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70DUM017AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70DUM025AG | Microchip Technology | Description: MOSFET 2N-CH 700V 689A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1882W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70DUM07T3AG | Microchip Technology | Description: SIC 2N-CH 700V 353A SP3F Power - Max: 988W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Drain to Source Voltage (Vdss): 700V | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70DUM10T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70DUM10T3AG | Microchip Technology | Description: MOSFET 2N-CH 700V 241A SP3F Configuration: 2 N-Channel (Dual) Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 690W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70HM038AG | Microchip Technology | Description: SIC 4N-CH 700V 464A Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 1.277kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 16mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70HM038AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6C | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70HM038CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70HM05AG | Microchip Technology | Description: PM-MOSFET-SIC-SP6C Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 966W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 12mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70HM05CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70HM19CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70HM19CT3AG | Microchip Technology | Description: MOSFET 4N-CH 700V 124A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70HM19T3AG | Microchip Technology | Description: MOSFET 4N-CH 700V 124A Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 365W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70HM19T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TAM05TPAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TAM05TPAG | Microchip Technology | Description: PM-MOSFET-SIC~-SP6P Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 3 Phase Inverter Part Status: Active Current: 273 A Voltage: 700 V | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TAM10CTPAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TAM10CTPAG | Microchip Technology | Description: PM-MOSFET-SIC-SBD~-SP6P | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TAM10TPAG | Microchip Technology | Description: PM-MOSFET-SIC-SP6P Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 674W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TAM10TPAG | Microchip Technology | Discrete Semiconductor Modules CC6560 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TAM19CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TAM19CT3AG | Microchip Technology | Description: MOSFET 6N-CH 700V 124A SP3F Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 365W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TAM19T3AG | Microchip Technology | Description: MOSFET 6N-CH 700V 124A Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 365W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TAM19T3AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TLM05CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TLM05CAG | Microchip Technology | Description: MOSFET 4N-CH 700V 464A SP6C Part Status: Active Supplier Device Package: SP6C Vgs(th) (Max) @ Id: 2.4V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 1277W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Three Level Inverter) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TLM07CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TLM07CAG | Microchip Technology | Description: MOSFET 4N-CH 700V 349A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 966W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Supplier Device Package: SP6C Part Status: Active | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TLM10C3AG | Microchip Technology | Description: SIC 4N-CH 700V 241A MODULE Packaging: Box Package / Case: Module Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 690W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA (Typ) Supplier Device Package: Module Part Status: Active | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TLM10C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TLM19C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70TLM19C3AG | Microchip Technology | Description: MOSFET 4N-CH 700V 124A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TLM44C3AG | Microchip Technology | Description: MOSFET 4N-CH 700V 58A SP3F Part Status: Active Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.7V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 176W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Three Level Inverter) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70TLM44C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VM10C4AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP4 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VM10C4AG | Microchip Technology | Description: PM-MOSFET-SIC-SBD~-SP4 Part Status: Active Supplier Device Package: SP4 Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 674W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Package / Case: Module Packaging: Tube Mounting Type: Chassis Mount | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70VM19C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VM19C3AG | Microchip Technology | Description: MOSFET 2N-CH 700V 124A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VR1M03CT6AG | Microchip Technology | Description: MOSFET 2N-CH 700V 585A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1625W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 585A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 700V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 200A, 20V Gate Charge (Qg) (Max) @ Vgs: 1075nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 20mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VR1M07CT6AG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VR1M07CT6AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VR1M10CT3AG | Microchip Technology | Description: MOSFET 2N-CH 700V 241A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 690W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70VR1M10CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VR1M10CTPAG | Microchip Technology | Description: SIC 6N-CH 700V 238A Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 674W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (Phase Leg) | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM70VR1M10CTPAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VR1M19C1AG | Microchip Technology | Description: MOSFET 2N-CH 700V 124A Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drain to Source Voltage (Vdss): 700V Power - Max: 365W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70VR1M19C1AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70XM19CTYZBNMG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70XM19CTYZBNMG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-NHPD Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 4000Vrms Current: 110 A Voltage: 650 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70XM45CTYZBNMG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSM70XM75CTYZBNMG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSMC120AM04TBZ2AEG | Microchip Technology | Description: 1200V, 4 MOHM PHASE LEG BZ2 MSIC Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 766W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 266A Input Capacitance (Ciss) (Max) @ Vds: 17800pF @ 1000V Rds On (Max) @ Id, Vgs: 6mOhm @ 225A, 18V Gate Charge (Qg) (Max) @ Vgs: 726nC @ 18V Vgs(th) (Max) @ Id: 5V @ 13.5mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCSMC120AM04TBZ2EG | Microchip Technology | Description: 1200V, 4 MOHM PHASE LEG BZ2 MSIC Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 604W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 236A Input Capacitance (Ciss) (Max) @ Vds: 17.8pF @ 1000V Rds On (Max) @ Id, Vgs: 6mOhm @ 225A, 18V Gate Charge (Qg) (Max) @ Vgs: 726nC @ 18V Vgs(th) (Max) @ Id: 5V @ 13.5mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCT-5S | TE Connectivity / AMP | Industrial Relays MST T05 TRANS. RELAY | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCT05C | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MSCT12 | auf Bestellung 2091 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MSCU18C | N/A | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MSCU5C | PHILIPS | 9806 | auf Bestellung 124 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCUC3843A | UC | 07+/08+ SOP8 | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MSCX-14-14-F | Ruland Manufacturing | Description: 14MMX14MM STEEL RIGID COUPLING | auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |