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AOT2500LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 107A; 187.5W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 107A
Power dissipation: 187.5W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 97nC
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.95 EUR
20+4.38 EUR
25+3.93 EUR
100+3.8 EUR
Mindestbestellmenge: 18 Stücke
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AOT2502LAlpha & Omega SemiconductorTrans MOSFET N-CH 150V 18.5A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
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AOT2502LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 18.5/106A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5.1V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.47 EUR
50+4.13 EUR
100+3.78 EUR
500+3.18 EUR
Mindestbestellmenge: 3 Stücke
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AOT254LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 4.2A/32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT25S65LAlpha & Omega SemiconductorTrans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220 T/R
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AOT25S65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
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AOT2606LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 13A/72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2608LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 11A/72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 30 V
Produkt ist nicht verfügbar
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AOT260LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R
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 Mindestbestellmenge: 1000 Stücke
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AOT260LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 20A/140A TO220
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 330W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.64 EUR
50+3.9 EUR
100+3.55 EUR
500+2.92 EUR
1000+2.7 EUR
2000+2.63 EUR
Mindestbestellmenge: 3 Stücke
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AOT260LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2610LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 9A/55A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 30 V
Produkt ist nicht verfügbar
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AOT2618LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 7A 3-Pin(3+Tab) TO-220
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AOT2618LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 20.5W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 18A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 6nC
Power dissipation: 20.5W
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.46 EUR
80+1.07 EUR
90+0.95 EUR
100+0.87 EUR
Mindestbestellmenge: 59 Stücke
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AOT2618LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 7A/23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.06 EUR
50+1.45 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
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AOT262LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 20A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V
Produkt ist nicht verfügbar
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AOT264LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 19A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT266LAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 140A 3-Pin(3+Tab) TO-220 T/R
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 Mindestbestellmenge: 1000 Stücke
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AOT266LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 18A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5650 pF @ 30 V
auf Bestellung 613 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.78 EUR
50+2.88 EUR
100+2.61 EUR
500+2.11 EUR
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AOT266LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220
Case: TO220
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 60V
Power dissipation: 134W
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.4 EUR
22+3.89 EUR
25+3.51 EUR
Mindestbestellmenge: 20 Stücke
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AOT270ALAlpha & Omega SemiconductorTrans MOSFET N-CH 75V 140A 3-Pin(3+Tab) TO-220 Tube
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AOT270ALAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 21.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V
Produkt ist nicht verfügbar
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AOT270LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 21.5A/140A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 37.5 V
Produkt ist nicht verfügbar
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AOT27S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R
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AOT27S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 27A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 3155 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.54 EUR
50+3.92 EUR
100+3.56 EUR
500+3.24 EUR
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AOT27S60LAOSMOSFET N-CH 600V 27A TO220 Транзистори
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AOT27S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-220 T/R
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AOT27S60L
Produktcode: 122782
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Transistoren > MOSFET N-CH
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AOT27S60L_001Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Produkt ist nicht verfügbar
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AOT280A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 14A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT280LAlpha & Omega SemiconductorTrans MOSFET N-CH 80V 140A 3-Pin(3+Tab) TO-220
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AOT280LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 20.5A/140A TO220
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Produkt ist nicht verfügbar
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AOT280L
Produktcode: 154540
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Transistoren > MOSFET N-CH
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AOT282LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 58nC
Power dissipation: 136W
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.99 EUR
45+1.93 EUR
47+1.82 EUR
100+1.74 EUR
Mindestbestellmenge: 43 Stücke
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AOT282LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 18.5A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT284LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 16A/105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT286LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 83W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 44.5nC
Power dissipation: 83W
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.43 EUR
66+1.3 EUR
75+1.14 EUR
100+1.04 EUR
500+0.99 EUR
Mindestbestellmenge: 60 Stücke
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AOT286LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 13A/70A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT286LAlpha & Omega SemiconductorTrans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220
auf Bestellung 3876 Stücke:
Lieferzeit 14-21 Tag (e)
128+1.37 EUR
1000+1.33 EUR
Mindestbestellmenge: 128 Stücke
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AOT286LAlpha & Omega SemiconductorTrans MOSFET N-CH 80V 70A 3-Pin(3+Tab) TO-220
auf Bestellung 3884 Stücke:
Lieferzeit 14-21 Tag (e)
128+1.36 EUR
1000+1.3 EUR
Mindestbestellmenge: 128 Stücke
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AOT288LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 36A; 46.5W; TO220
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220
Polarisation: unipolar
Gate charge: 26.5nC
On-state resistance: 9.2mΩ
Gate-source voltage: ±20V
Drain current: 36A
Power dissipation: 46.5W
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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AOT288LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 10.5A/46A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2904
Produktcode: 193039
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Produkt ist nicht verfügbar
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AOT2904Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7085 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT2906Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V TO220
Supplier Device Package: TO-220
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT290LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.23 EUR
Mindestbestellmenge: 1000 Stücke
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AOT290LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT290LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 18A/140A TO220
Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1912 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.39 EUR
50+3.82 EUR
100+3.47 EUR
500+3.12 EUR
Mindestbestellmenge: 3 Stücke
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AOT290LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-220 T/R
auf Bestellung 21585 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.18 EUR
Mindestbestellmenge: 1000 Stücke
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AOT2910LAOSAOT2910L Транзистор: N-MOSFET; польовий; 100В; 21А; 25Вт; TO-220 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT2910LAlpha & Omega Semiconductor Inc.Description: MOSFET N CH 100V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2910LALPHA&OMEGATransistor N-Channel MOSFET; 100V; 20V; 43mOhm; 30A; 50W; -55°C ~ 175°C; AOT2910L TAOT2910l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.26 EUR
Mindestbestellmenge: 20 Stücke
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AOT2916LALPHA&OMEGATransistor N-Channel MOSFET; 100V; 20V; 62mOhm; 23A; 41,5W; -55°C ~ 175°C; AOT2916L TAOT2916l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.31 EUR
Mindestbestellmenge: 20 Stücke
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AOT2916LAlpha & Omega Semiconductor Inc.Description: MOSFET N CH 100V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
Produkt ist nicht verfügbar
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AOT2918LALPHA&OMEGATransistor N-Channel MOSFET; 100V; 20V; 12mOhm; 90A; 267W; -55°C ~ 175°C; AOT2918L TAOT2918l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.72 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT2918LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13A/90A TO220
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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AOT292LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 105A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT292LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 105A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT296LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT296LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 54W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.5nC
Power dissipation: 54W
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.94 EUR
50+1.74 EUR
54+1.58 EUR
100+1.55 EUR
Mindestbestellmenge: 44 Stücke
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AOT296LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9.5A/70A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT298LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9A/58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 50 V
Produkt ist nicht verfügbar
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AOT29S50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT2N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOT360A70LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
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AOT360A70LAlpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT380A60CLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 131W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.61 EUR
50+2.26 EUR
100+2.03 EUR
500+1.63 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOT380A60LAlpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
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AOT380A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 131W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT3N100Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 1000V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOT3N100ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.8A; 132W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.8A
Power dissipation: 132W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.75 EUR
118+0.73 EUR
125+0.68 EUR
131+0.65 EUR
Mindestbestellmenge: 114 Stücke
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AOT3N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 3A TO220
Produkt ist nicht verfügbar
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AOT3N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 2.5A TO-220
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AOT404Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 105V 40A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 105 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT410LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube
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AOT410LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 167W; TO220
Power dissipation: 167W
Gate charge: 107nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Case: TO220
On-state resistance: 6.5mΩ
Mounting: THT
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.96 EUR
32+2.68 EUR
37+2.34 EUR
100+2.13 EUR
Mindestbestellmenge: 29 Stücke
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AOT410LALPHA&OMEGATransistor N-Channel MOSFET; 100V; 25V; 11mOhm; 150A; 333W; -55°C ~ 175°C; AOT410L TAOT410l
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.63 EUR
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AOT410LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 12A/150A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V
auf Bestellung 1360 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.87 EUR
50+3.47 EUR
100+3.15 EUR
500+2.8 EUR
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AOT412ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 75W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 15.8mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
Power dissipation: 75W
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.83 EUR
52+1.65 EUR
57+1.5 EUR
100+1.42 EUR
Mindestbestellmenge: 47 Stücke
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AOT412Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 8.2A/60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Produkt ist nicht verfügbar
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AOT412Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220
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AOT414Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 5.6A/43A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.62 EUR
50+1.73 EUR
100+1.55 EUR
500+1.23 EUR
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AOT414ALPHA&OMEGATransistor N-Channel MOSFET; 100V; 25V; 43mOhm; 43A; 115W; -55°C ~ 175°C; AOT414 TAOT414
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.12 EUR
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AOT414ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 58W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 58W
Case: TO220
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 28nC
Kind of channel: enhancement
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AOT416Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 4.7A/42A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 1.92W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Produkt ist nicht verfügbar
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AOT416
Produktcode: 62537
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Verschiedene Bauteile > Verschiedene Bauteile 2
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AOT416LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 4.7A/42A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 1.92W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
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AOT416_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V TO220
Produkt ist nicht verfügbar
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AOT418L
Produktcode: 149796
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Transistoren > MOSFET N-CH
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AOT418LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9.5A/105A TO220
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT418L_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9.5A/105A TO220
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AOT424Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 110A TO220
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOT424ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 20V; 6mOhm; 110A; 100W; -55°C ~ 175°C; AOT424 TAOT424
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.12 EUR
Mindestbestellmenge: 20 Stücke
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AOT428AO07+ 220
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
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AOT42S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
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AOT42S60LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO220
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 0.31Ω
Drain current: 23A
Drain-source voltage: 600V
Gate-source voltage: ±30V
Power dissipation: 417W
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.9 EUR
12+7.09 EUR
25+6.28 EUR
Mindestbestellmenge: 11 Stücke
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AOT42S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 37A TO220
Part Status: Not For New Designs
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 694 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.61 EUR
10+9.17 EUR
100+6.66 EUR
500+5.59 EUR
Mindestbestellmenge: 2 Stücke
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AOT42S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
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AOT430ALPHA&OMEGATransistor N-Channel MOSFET; 75V; 25V; 19mOhm; 80A; 268W; -55°C ~ 175°C; AOT430 TAOT430
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.31 EUR
Mindestbestellmenge: 10 Stücke
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AOT430Alpha & Omega SemiconductorTrans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220
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