Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| DMN62D0UW-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | auf Bestellung 42863 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UW-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) | auf Bestellung 435000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UW-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D0UW-7 | Diodes | MOSFET N-CH 60V 340mA SOT-323 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D0UWQ-13 | Diodes Zetex | High Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D0UWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Packaging: Cut Tape (CT) | auf Bestellung 226920 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | auf Bestellung 220000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 19500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UWQ-7 | Diodes Zetex | High Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D0UWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 114000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UWQ-7 | DIODES INC. | Description: DIODES INC. - DMN62D0UWQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 340 mA, 1.2 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 340mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D0UWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | auf Bestellung 3276 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UWQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 340MA SOT323 Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) | auf Bestellung 115433 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UWQ-7 | DIODES INC. | Description: DIODES INC. - DMN62D0UWQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 340 mA, 1.2 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 340mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 320mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | DIODES INC. | Description: DIODES INC. - DMN62D1LFB-7B - Leistungs-MOSFET, n-Kanal, 60 V, 407 mA, 1.3 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 407mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.3ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1055 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V X1-DFN1006-3 T&R 10K | auf Bestellung 36166 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 8179 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Incorporated | Description: MOSFET N-CH 60V 320MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | DIODES INC. | Description: DIODES INC. - DMN62D1LFB-7B - Leistungs-MOSFET, n-Kanal, 60 V, 407 mA, 1.3 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 407mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.3ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1055 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 8179 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFB-7B | Diodes Incorporated | Description: MOSFET N-CH 60V 320MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V | auf Bestellung 27457 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1LFB-7B транзистор Produktcode: 221985
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
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| DMN62D1LFD-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V | auf Bestellung 4219911 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFD-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V | auf Bestellung 4210000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFD-13 | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1LFD-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 0.55nC Drain current: 0.4A Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R | auf Bestellung 1671 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 137 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1LFD-7 | DIODES INC. | Description: DIODES INC. - DMN62D1LFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 400 mA, 0.8 ohm, U-DFN1212, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: U-DFN1212 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.8ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFD-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V | auf Bestellung 1066085 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFD-7 | Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 20Vgs 0.4A 32pF | auf Bestellung 223595 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R | auf Bestellung 1671 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFD-7 | DIODES INC. | Description: DIODES INC. - DMN62D1LFD-7 - Leistungs-MOSFET, n-Kanal, 60 V, 400 mA, 0.8 ohm, U-DFN1212, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: U-DFN1212 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.8ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFD-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V | auf Bestellung 1062000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R | auf Bestellung 711000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFD-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFDQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW; U-DFN1212-3 Type of transistor: N-MOSFET Mounting: SMD Case: U-DFN1212-3 Polarisation: unipolar Gate charge: 0.55nC Drain current: 0.4A Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Application: automotive industry | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1LFDQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA 3DFN T&R 1 | auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFDQ-13 | Diodes Incorporated | MOSFET 2N7002 Family | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1LFDQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA 3DFN T&R 3 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Grade: Automotive Supplier Device Package: U-DFN1212-3 (Type C) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFDQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A Automotive AEC-Q101 3-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFDQ-7 | DIODES INC. | Description: DIODES INC. - DMN62D1LFDQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 400 mA, 0.8 ohm, U-DFN1212, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: U-DFN1212 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.8ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1485 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFDQ-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 400MA 3DFN T&R 3 Packaging: Tape & Reel (TR) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN1212-3 (Type C) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFDQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A Automotive AEC-Q101 3-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFDQ-7 | Diodes Incorporated | MOSFETs 2N7002 Family | auf Bestellung 17873 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1LFDQ-7 | DIODES INC. | Description: DIODES INC. - DMN62D1LFDQ-7 - Leistungs-MOSFET, n-Kanal, 60 V, 400 mA, 0.8 ohm, U-DFN1212, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: U-DFN1212 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.8ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1485 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1LFDQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.4A Automotive AEC-Q101 3-Pin UDFN EP T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | DIODES INC. | Description: DIODES INC. - DMN62D1SFB-7B - Leistungs-MOSFET, n-Kanal, 60 V, 410 mA, 1.4 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 410mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 470mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 9375 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 55949 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1SFB-7B | Diodes Incorporated | Description: MOSFET N-CH 60V 410MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V | auf Bestellung 7698307 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | DIODES INC. | Description: DIODES INC. - DMN62D1SFB-7B - Leistungs-MOSFET, n-Kanal, 60 V, 410 mA, 1.4 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 410mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 470mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 9375 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Incorporated | Description: MOSFET N-CH 60V 410MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) | auf Bestellung 7690000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D1SFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.41A 3-Pin DFN T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN62D1SFBW-7B | Diodes Incorporated | Description: 2N7002 FAMILY X2-DFN1006-3 T&R Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 40mA, 10V Current - Continuous Drain (Id) @ 25°C: 528mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN1006-3/SWP (Type UX) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 500µW (Ta) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2U-13 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V | auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D2U-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 3K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V | auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D2U-7 | Diodes Incorporated | MOSFETs 2N7002 Family SOT23 T&R 3K | auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D2UDMQ-7 | Diodes Incorporated | MOSFETs 2N7002 Family SOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UDMQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.44A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UDW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V SOT363 T&R Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UDWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 41V~60V SOT363 T&R Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UQ-13 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UQ-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 3K Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 1532 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D2UQ-7 | Diodes Incorporated | MOSFETs 2N7002 Family SOT23 T&R 3K | auf Bestellung 5746 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D2UQ-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 3K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UT-13 | Diodes Incorporated | Description: 2N7002 FAMILY SOT523 T&R 10K Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 334mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UT-13 | Diodes Incorporated | MOSFETs 2N7002 Family SOT523 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UT-7 | Diodes Incorporated | MOSFETs 2N7002 Family SOT523 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UT-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT523 T&R 3K Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 334mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UTQ-13 | Diodes Incorporated | Description: 2N7002 FAMILY SOT523 T&R 10K Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 334mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UTQ-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT523 T&R 3K Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 334mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 171000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D2UVT-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.455A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D2UWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V SOT323 T&R 3K | auf Bestellung 5681 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D4LDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 0.261A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D4LDW-13 | Diodes Incorporated | MOSFETs 2N7002 Family SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D4LDW-7 | Diodes Incorporated | MOSFETs 2N7002 Family SOT363 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D4LFB | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN62D4LFB-7B | Diodes Zetex | Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |